CN111893540B - Preparation method of aluminum-silicon alloy micro-arc oxidation film layer - Google Patents
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- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
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- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/024—Anodisation under pulsed or modulated current or potential
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/026—Anodisation with spark discharge
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
Abstract
The invention discloses a preparation method of an aluminum-silicon alloy micro-arc oxidation film layer, which comprises the following steps: s1, pretreatment: removing silicon elements on the surface of the aluminum-silicon alloy base material; s2, micro-arc oxidation: placing the aluminum-silicon alloy treated in the step S1 in an alkaline electrolyte for micro-arc oxidation treatment; wherein a constant-voltage micro-arc oxidation mode or a sectional constant-current micro-arc oxidation mode is adopted in the micro-arc oxidation process; the alkaline electrolyte mainly contains aluminate and does not contain silicon element. The scheme of the invention reduces the content of loose and porous mullite phase in the micro-arc oxidation film layer of the aluminum-silicon alloy, improves the structural compactness of the film layer, has gradient change of the cross section, and realizes the purpose of efficiently preparing the micro-arc oxidation ceramic film layer with excellent performance on the surface of the aluminum-silicon alloy, thereby obtaining the surface-reinforced aluminum-silicon alloy.
Description
Technical Field
The invention relates to the technical field of aluminum-silicon alloy surface treatment, in particular to a preparation method of an aluminum-silicon alloy micro-arc oxidation film layer.
Background
The aluminum-silicon alloy is a forging and casting alloy which takes aluminum and silicon as main components, has small solidification shrinkage rate, good casting forming performance and wide application prospect in industry due to low production cost. However, the surface of the steel plate is not ideal in wear resistance, corrosion resistance or heat resistance, so that the steel plate still needs to be subjected to surface treatment in the application process to improve the surface performance of the steel plate, thereby meeting certain higher use condition requirements. In the prior art, researchers usually adopt common surface treatment processes such as anodic oxidation and the like to improve the surface performance of the aluminum-silicon alloy, but because silicon phase is difficult to oxidize under conventional conditions, a film layer with strong bonding force, good uniformity and consistency and excellent wear resistance cannot be prepared on the surface of the aluminum-silicon alloy.
Recently, researchers have found that these problems can be effectively overcome by performing surface treatment of aluminum-silicon alloy through micro-arc oxidation technology which is environmentally friendly. In the micro-arc oxidation process, the local high-temperature and high-pressure condition formed by the discharge arc can promote that both the silicon phase and the aluminum phase in the aluminum-silicon alloy can be greatly oxidized, and then a layer of oxide ceramic film layer composed of alumina, mullite and the like is prepared on the surface of the aluminum-silicon alloy in an in-situ growth mode, so that the comprehensive performance of the surface of the aluminum-silicon alloy is obviously improved. However, in the practical application process, when the content of silicon element in the aluminum-silicon alloy is high and more eutectic silicon phase or even primary silicon phase appears in the substrate structure, because no electric arc is generated in the anodic oxidation stage at the initial stage of micro-arc oxidation, the silicon phase is still difficult to oxidize and cannot form a high-resistance insulating film, so that the film growth rate of the surface of the aluminum-silicon alloy on the surface of the whole substrate at the initial stage of micro-arc oxidation is reduced, and the slowly oxidized silicon phases cause more current to pass through the surface of the slowly oxidized silicon phase at the initial stage of film formation and be consumed in a heating manner, thereby obviously reducing the electric energy utilization efficiency in the process of forming the micro-arc oxidation film on the surface of the aluminum-silicon alloy. Although the silicon phase in the aluminum-silicon alloy base material is oxidized under the action of local high-temperature and high-pressure conditions formed by a discharge arc in the subsequent discharge oxidation stage, the silicon phase finally reacts with alumina formed by oxidation of the aluminum phase to be converted into loose and porous mullite. The mullite impurities can be doped in the alumina film layer in a disordered mode, so that the structural compactness of the micro-arc oxidation film layer on the surface of the whole aluminum-silicon alloy is reduced, and the hardness, wear resistance, corrosion resistance and other properties of the film layer are obviously reduced.
Therefore, the method has important significance for further improving the micro-arc oxidation technology.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a preparation method of the micro-arc oxidation film layer of the aluminum-silicon alloy, which can prepare the micro-arc oxidation film layer with excellent corrosion resistance on the surface of the aluminum-silicon alloy.
A production method according to an embodiment of the present invention includes the steps of:
s1, pretreatment: removing silicon elements on the surface of the aluminum-silicon alloy base material;
s2, micro-arc oxidation: placing the aluminum-silicon alloy treated in the step S1 in an alkaline electrolyte for micro-arc oxidation treatment;
wherein a constant-voltage micro-arc oxidation mode or a sectional constant-current micro-arc oxidation mode is adopted in the micro-arc oxidation process;
the alkaline electrolyte mainly contains aluminate and does not contain silicon element.
According to some embodiments of the present invention, the process parameters of the constant voltage micro-arc oxidation mode are: the positive voltage is 350-450V, the negative voltage is 25-75V, the frequency is 50-400 Hz, the duty ratio is 10-30%, and the ratio of positive to negative pulses is 1-3: 1; preferably, the process parameters of the constant-voltage micro-arc oxidation mode are as follows: the positive voltage is 400V, the negative voltage is 50V, the frequency is 300Hz, the duty ratio is 25 percent, and the ratio of positive pulse to negative pulse is 1: 1.
According to some embodiments of the invention, the al-si alloy substrate has a silicon mass fraction of not less than 4%.
According to some embodiments of the invention, the segmented constant current micro-arc oxidation mode is a two-segment bidirectional constant current oxidation mode; the two-stage bidirectional constant current oxidation mode comprises a first stage and a second stage, wherein the forward current of the first stage is larger than that of the second stage.
According to some embodiments of the invention, the process parameters of the first stage comprise: the forward current density is 10-15A/dm2Negative current density of 3-6A/dm2The frequency is 50-450 Hz, the duty ratio is 10-30%, and the ratio of positive and negative pulses is 1-3: 1; the technological parameters of the second stage include forward current density of 5-10A/dm2(ii) a Preferably, the process parameters of the first stage include: forward current density10～15A/dm2Negative current density of 5A/dm2The frequency is 400Hz, the duty ratio is 25 percent, and the ratio of positive pulse to negative pulse is 1: 1; the process parameters of the second stage include a forward current density of 8A/dm2。
According to some embodiments of the invention, the alkaline electrolyte has a pH ≧ 8; preferably, the pH is between 10 and 13.
According to some embodiments of the invention, the concentration of aluminate in the alkaline electrolyte is between 5 and 20 g/L; preferably, the concentration is between 10 and 15 g/L; more preferably, the concentration is between 10 and 12 g/L.
According to some embodiments of the invention, the alkaline electrolyte further comprises at least one of a soluble phosphate or a soluble fluoride; preferably, the soluble phosphate is selected from potassium or sodium salts and the soluble fluoride is selected from NaF or KF. Soluble phosphate and fluoride are added to further improve the conductivity of the electrolyte.
According to some embodiments of the present invention, the method for removing silicon element on the surface of the aluminum-silicon alloy substrate in step S1 is to perform soaking with mixed acid solution.
According to some embodiments of the present invention, preferably, the mixed acid solution is a mixed solution of hydrofluoric acid and concentrated nitric acid; more preferably, the mass fraction of HF in the hydrofluoric acid is 38-40%, and HNO in the concentrated nitric acid is3The mass fraction of (A) is 60-70%; more preferably, the volume fraction of the hydrofluoric acid in the mixed solution is 15-35%.
According to some embodiments of the invention, the soaking time is 20-100 s; preferably, the soaking time is 30-60 s.
According to some embodiments of the invention, the pre-treatment in step S1 further includes degreasing before soaking.
According to some embodiments of the present invention, the step S1 further includes cleaning the soaked aluminum-silicon substrate with alcohol or acetone to remove residual silicon phase on the surface of the sample.
The preparation method according to the embodiment of the invention has at least the following beneficial effects: according to the scheme of the invention, the silicon phase on the surface of the base material is removed, so that the silicon phase content of the surface layer of the aluminum-silicon alloy base material is reduced to the maximum extent, and the problems of large electric energy loss, slow film forming rate and the like caused by the existence of the silicon phase in the micro-arc oxidation process of the aluminum-silicon alloy are solved; the content of loose and porous mullite phase in the micro-arc oxidation film layer of the aluminum-silicon alloy is reduced, the structural compactness of the film layer is improved, the cross section is in gradient change, the purpose of efficiently preparing the micro-arc oxidation ceramic film layer with excellent performance on the surface of the aluminum-silicon alloy is realized, and the surface-strengthened aluminum-silicon alloy is further obtained.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 is a schematic structural view of an aluminum-silicon alloy prepared according to an embodiment of the present invention;
FIG. 2 is a surface morphology of an Al-Si alloy after immersion treatment in example 1 of the present invention;
FIG. 3 is a graph illustrating an electrochemical corrosion test of a micro-arc oxidation film layer prepared in example 1 of the present invention;
FIG. 4 is an XRD spectrum of the micro-arc oxidation film layer prepared in example 1 of the present invention;
FIG. 5 shows the cross-sectional profile of the micro-arc oxide film layer prepared in example 4 of the present invention.
Description of reference numerals:
1. an aluminum-silicon alloy base material; 2. and (3) micro-arc oxidation film layer.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments. The test methods used in the examples are all conventional methods unless otherwise specified; the materials, reagents and the like used are commercially available reagents and materials unless otherwise specified.
The first embodiment of the invention is as follows: a preparation method of an aluminum-silicon alloy micro-arc oxidation film layer comprises the following steps: the aluminum-silicon alloy with the micro-arc oxidation film layer 2 on the surface as shown in figure 1 is obtained by carrying out etching pretreatment on the aluminum-silicon alloy substrate 1 and then carrying out micro-arc oxidation treatment.
The etching pretreatment specifically comprises the following steps:
1) preparing a sample with the size of 20mm multiplied by 4mm by using ZL102 aluminum-silicon alloy as a base material, and performing degreasing treatment at the temperature of about 55 ℃ (within the range of 50-60 ℃) by adopting sodium hydroxide with the concentration of 40g/L and sodium silicate solution with the concentration of 10 g/L;
2) cleaning with distilled water to remove residual alkali liquor on the surface of the substrate;
3) carrying out etching pretreatment on the degreased aluminum-silicon alloy sample by adopting mixed acid liquid consisting of 40% hydrofluoric acid and 69% concentrated nitric acid in a volume ratio of 4:1, wherein the soaking treatment time is 40 s;
4) cleaning with distilled water to remove residual acid liquor on the surface of the sample;
5) and (3) ultrasonically cleaning the sample by using alcohol to remove the silicon phase which is dissolved on the surface of the sample but possibly adsorbs and remains on the surface of the sample.
Scanning Electron Microscope (SEM) analysis of the treated aluminum alloy substrate is shown in fig. 2; as can be seen from fig. 2, after the aluminum alloy substrate is soaked in the mixed solution of hydrofluoric acid and concentrated nitric acid, part or all of the silicon phase on the surface of the substrate is exposed.
The micro-arc oxidation treatment comprises the following specific steps:
1) preparing electrolyte, dissolving different reagents into distilled water respectively, stirring uniformly, and preparing alkaline electrolyte consisting of 12g/L of sodium aluminate, 4g/L of sodium hydroxide, 8g/L of sodium phosphate and 3g/L of sodium fluoride;
2) and (3) performing sectional constant-current micro-arc oxidation treatment on the pre-treated sample completely soaked in the electrolyte by adopting a bipolar direct-current pulse power supply to obtain a compact micro-arc oxidation film layer. The constant-current micro-arc oxidation process parameters are as follows: in the first stage, the forward current is 12A/dm2(ii) a Negative current density of 5A/dm2(ii) a The frequency is 400 Hz; duty cycle 25%; the positive-negative pulse ratio is 1: 1; the temperature of the electrolyte is lower than 40 ℃; oxygen gasThe time for the reaction was 15 minutes. In the second stage, the forward current is 8A/dm2(ii) a The oxidation time was 5 minutes; the other parameters are the same as in the first stage. There is no time interval in the staged oxidation process.
The second embodiment of the invention is as follows: the preparation method of the micro-arc oxidation film layer of the aluminum-silicon alloy is different from the first embodiment in that:
in the pretreatment process, an aluminum-silicon alloy with 16 percent of silicon content is taken as a base material, and the soaking treatment time is 60 s;
in the micro-arc oxidation treatment process, the electrolyte comprises the following components: 12g/L of sodium aluminate, 4g/L of sodium hydroxide, 10g/L of sodium phosphate and 3g/L of sodium fluoride; the constant-current micro-arc oxidation process parameters are as follows: in the first stage, the forward current is 15A/dm2(ii) a Negative current density of 5A/dm2(ii) a The frequency is 400 Hz; duty cycle 25%; the positive-negative pulse ratio is 1: 1; the temperature of the electrolyte is lower than 40 ℃; the oxidation time was 15 minutes. In the second stage, the forward current is 10A/dm2(ii) a The oxidation time was 5 minutes; the other parameters are the same as in the first stage. There is no time interval in the staged oxidation process.
The third embodiment of the invention is as follows: the preparation method of the micro-arc oxidation film layer of the aluminum-silicon alloy is different from the second embodiment in that:
in the micro-arc oxidation treatment process, the electrolyte comprises the following components: 12g/L of sodium aluminate, 4g/L of sodium hydroxide, 10g/L of sodium phosphate and 6g/L of sodium fluoride; the constant-current micro-arc oxidation process parameters are as follows: in the first stage, the forward current is 15A/dm2(ii) a Negative current density of 5A/dm2(ii) a The frequency is 400 Hz; duty cycle 25%; the positive-negative pulse ratio is 1: 1; the temperature of the electrolyte is lower than 40 ℃; the oxidation time was 10 minutes. And in the second stage, the forward current is 10A/dm2(ii) a The oxidation time was 5 minutes; the other parameters are the same as in the first stage. There is no time interval in the staged oxidation process.
The fourth embodiment of the invention is as follows: the preparation method of the micro-arc oxidation film layer of the aluminum-silicon alloy is different from the first embodiment in that:
pretreating ZL101 aluminum-silicon alloy serving as a base material, wherein the soaking treatment time is 30s in the pretreatment process;
in the micro-arc oxidation treatment process, the electrolyte comprises the following components: 10g/L of sodium aluminate, 4g/L of sodium hydroxide, 10g/L of sodium phosphate and 3g/L of sodium fluoride; and (3) adopting a bipolar direct-current pulse power supply to carry out constant-voltage micro-arc oxidation treatment on the pre-treated sample which is completely soaked in the electrolyte. Wherein the constant-pressure micro-arc oxidation process parameters are as follows: a forward voltage of 400V; negative voltage is 50V; the frequency is 300 Hz; duty cycle 25%; the positive-negative pulse ratio is 1: 1; the temperature of the electrolyte is lower than 40 ℃; the oxidation time was 20 minutes.
And (3) carrying out an electrochemical corrosion test on the micro-arc oxidation film layer prepared in the embodiment 1-4, wherein in the performance test of the micro-arc oxidation film layer, a MH-5 microhardness meter is adopted to measure the hardness value of the surface of the film layer, and analysis software of the instrument can calculate the microhardness value (accurate to two decimal places) of the measured point according to the diagonal length of the prismatic indentation. In order to improve the accuracy of the measured data, the measurement was carried out with a load of 25gf for 15s, and the average of the measurements of 5 different micro-areas was taken as the microhardness value of the film surface. And (3) evaluating the corrosion resistance of the prepared micro-arc oxidation film layer sample by using a CHI-660D electrochemical workstation, wherein the corrosion solution is a NaCl solution with the mass fraction of 3.5%, the balance buffer time selected in the measurement process is 10min, the scanning speed of a Tafel test is 2mV/s, and the scanning potential is-1.3-0V. Analyzing the potentiodynamic polarization curve by Tafel's slope software, calculating Tafel slopes of the cathode and anode polarization curves respectively by a linear regression method, and calculating I corresponding to the intersection point of two slope extension linescorrAs the corrosion-resistant current density of the sample. In order to improve the accuracy of data, two samples prepared under the same condition are respectively measured, and the average value of the two samples is taken as a corrosion-resistant current density value to measure the corrosion resistance of the samples. The corrosion resistance of the micro-arc oxide film layer prepared in example 1 is shown in fig. 3. As can be seen from FIG. 3, the micro-arc oxide film layer prepared by the embodiment of the invention has good corrosion resistance. The corrosion resistance of the micro-arc oxide layer prepared by other embodiments has similar effect.
Analysis of micro-arc oxidation by X-Ray Diffractometer (XRD) using Philips X' pert MPDPhase structure of film sample, K with diffractometer as Cu targetαThe ray radiation is carried out, and the scanning area range is 20 degrees to 70 degrees (2 theta). The XRD analysis result of the micro-arc oxide film layer obtained in example 1 is shown in fig. 4, and it can be seen from fig. 4 that the oxide film layer obtained in the example of the present invention is mainly composed of alumina and the content of mullite is very low.
SEM analysis is carried out on the micro-arc oxidation film layers prepared in the embodiments 1-4, wherein the micro-arc oxidation film layer prepared in the embodiment 4 is shown in figure 5, and it can be seen from the figure that the micro-arc oxidation film layer prepared by the embodiment of the invention is compact. The oxide film layers prepared in other examples have similar effects. To avoid redundancy, they are not listed one by one.
The invention discloses a preparation method of an aluminum-silicon alloy micro-arc oxidation film layer, which is different from the first embodiment in that: excluding steps 3) to 5) in the pretreatment process.
The second comparative example of the invention is a preparation method of an aluminum-silicon alloy micro-arc oxidation film layer, and the difference with the first example is that: the electrolyte comprises the following components: 12g/L of sodium silicate, 4g/L of sodium hydroxide, 8g/L of sodium phosphate and 3g/L of sodium fluoride, and the characteristics of the other process parameters are the same as those of the first embodiment.
The third comparative example of the invention is a preparation method of an aluminum-silicon alloy micro-arc oxidation film layer, which is different from the first embodiment in that: except steps 3) to 5) in the pretreatment process, the electrolyte consists of 12g/L of sodium silicate, 4g/L of sodium hydroxide, 8g/L of sodium phosphate and 3g/L of sodium fluoride, and the characteristics of other process parameters are the same as those of the first embodiment.
And (3) performance testing:
under the condition of the combination of the pretreatment process and the electrolyte, the aluminum-silicon alloy samples with different silicon contents are soaked in concentrated nitric acid and hydrofluoric acid for different time, and the characteristics of the formed oxide film layer are shown in table 1:
TABLE 1
As can be seen from the above Table 1, the corrosion resistance of the micro-arc oxidation film layer prepared by the embodiment of the invention is significantly better than that of the control example group.
According to the embodiment of the invention, the aluminum-silicon alloy is soaked by adopting the mixed solution of hydrofluoric acid and concentrated nitric acid, the silicon phase on the surface layer of the aluminum-silicon alloy is better removed by controlling the components and time of the mixed acid solution, and the aluminum phase is retained; and then, an organic solvent such as alcohol or acetone is adopted to carry out ultrasonic cleaning, and a small amount of silicon which can be adsorbed on the surface of the matrix after the soaking treatment by the acid liquor is cleaned, so that the surface of the aluminum-silicon alloy is subjected to micro-arc oxidation by a structure close to pure aluminum. In the micro-arc oxidation treatment process, alkaline electrolyte which mainly contains meta-aluminate and does not contain silicon element is adopted for micro-arc oxidation treatment, and the finally formed film layer only contains a small amount of mullite phase, so that the content of loose and porous mullite is obviously reduced, and the micro-arc oxidation film layer has good effects of improving the wear resistance, corrosion resistance and other properties of the whole aluminum-silicon alloy surface micro-arc oxidation film layer.
In conclusion, according to the preparation method provided by the invention, the alkaline electrolyte which mainly contains meta-aluminate and does not contain silicon element is adopted for micro-arc oxidation treatment, so that the micro-arc oxidation film layer which only contains mullite phase and is ultralow in density is obtained; the energy density of electric arc is gradually reduced in the later stage of oxidation film forming by adopting a constant-voltage oxidation mode or a sectional type, so that a small amount of mullite phase formed in the later stage is mainly distributed at the position, close to the base material, of the inner layer of the whole micro-arc oxidation film layer, the oxidation voltage of the pre-treated aluminum-silicon alloy in the early stage of micro-arc oxidation can be quickly increased to enter a discharge oxidation stage, and the oxide film layer on the surface can quickly grow; in addition, because the content of the semiconductor silicon phase which is difficult to oxidize on the surface of the base material is obviously reduced in the pretreatment process, the leakage current passing through the surface of the silicon phase is greatly reduced, and the film forming efficiency is further improved; the electrolyte adopts an alkaline solution without silicon element, so that the phenomenon that silicon-containing oxide converted from silicate ions in the electrolyte enters the whole oxide film in the conventional process can be avoided. Therefore, by adopting the electrolyte and the process method, the mullite content can be obviously reduced in the ceramic film layer finally formed on the surface of the aluminum-silicon alloy substrate, the relative content of alumina is obviously increased, and the uniformity and the structural compactness of the internal structure of the film layer are improved, so that the comprehensive performance of the film layer is obviously improved.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.
Claims (15)
1. A preparation method of an aluminum-silicon alloy micro-arc oxidation film layer is characterized by comprising the following steps: the method comprises the following steps:
s1, pretreatment: removing silicon elements on the surface of the aluminum-silicon alloy base material;
s2, micro-arc oxidation: placing the aluminum-silicon alloy treated in the step S1 in an alkaline electrolyte for micro-arc oxidation treatment;
wherein a constant-voltage micro-arc oxidation mode is adopted in the micro-arc oxidation process;
the alkaline electrolyte mainly contains aluminate and does not contain silicon element;
the concentration of aluminate in the alkaline electrolyte is 5-20 g/L; the alkaline electrolyte also contains soluble phosphate and soluble fluoride.
2. The method for preparing the aluminum-silicon alloy micro-arc oxidation film layer according to claim 1, characterized in that: the process parameters of the constant-voltage micro-arc oxidation mode are as follows: the positive voltage is 350-450V, the negative voltage is 25-75V, the frequency is 50-400 Hz, the duty ratio is 10-30%, and the ratio of positive pulse to negative pulse is 1-3: 1.
3. The method for preparing the aluminum-silicon alloy micro-arc oxidation film layer according to claim 2, characterized in that: the process parameters of the constant-voltage micro-arc oxidation mode are as follows: the positive voltage is 400V, the negative voltage is 50V, the frequency is 300Hz, the duty ratio is 25 percent, and the ratio of positive pulse to negative pulse is 1: 1.
4. The method for preparing the aluminum-silicon alloy micro-arc oxidation film layer according to claim 1, characterized in that: the pH value of the alkaline electrolyte is more than or equal to 8.
5. The method for preparing the aluminum-silicon alloy micro-arc oxidation film layer according to claim 4, characterized in that: the pH value is between 10 and 13.
6. The method for preparing the aluminum-silicon alloy micro-arc oxidation film layer according to claim 1, characterized in that: the concentration of the aluminate in the alkaline electrolyte is 10-15 g/L.
7. The method for preparing the aluminum-silicon alloy micro-arc oxidation film layer according to claim 6, characterized in that: the concentration of the aluminate in the alkaline electrolyte is 10-12 g/L.
8. The method for preparing the aluminum-silicon alloy micro-arc oxidation film layer according to claim 1, characterized in that: the soluble phosphate is selected from potassium salt or sodium salt, and the soluble fluoride is selected from NaF or KF.
9. The method for preparing the aluminum-silicon alloy micro-arc oxidation film layer according to any one of claims 1 to 8, characterized in that: the method for removing the silicon element on the surface of the aluminum-silicon alloy substrate in the step S1 is to soak the aluminum-silicon alloy substrate with mixed acid liquor.
10. The method for preparing the aluminum-silicon alloy micro-arc oxidation film layer according to claim 9, characterized in that: the soaking time is 20-100 s.
11. The method for preparing the aluminum-silicon alloy micro-arc oxidation film layer according to claim 10, characterized in that: the soaking time is 30-60 s.
12. The method for preparing the aluminum-silicon alloy micro-arc oxidation film layer according to claim 9, characterized in that: the mixed acid liquid is a mixed liquid of hydrofluoric acid and concentrated nitric acid.
13. The method for preparing the aluminum-silicon alloy micro-arc oxidation film layer according to claim 12, characterized in that: the mass fraction of HF in the hydrofluoric acid is 38-40%, and the mass fraction of HNO in the concentrated nitric acid is3The mass fraction of (A) is 60-70%.
14. The method for preparing the aluminum-silicon alloy micro-arc oxidation film layer according to claim 13, characterized in that: the volume fraction of hydrofluoric acid in the mixed solution is 15-35%.
15. The method for preparing the aluminum-silicon alloy micro-arc oxidation film layer according to claim 9, characterized in that: step S1 further includes cleaning the soaked aluminum-silicon substrate with alcohol or acetone to remove the residual silicon phase on the surface of the sample.
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