CN1118787C - Porous anti-fake mark making process and testing device - Google Patents
Porous anti-fake mark making process and testing device Download PDFInfo
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- CN1118787C CN1118787C CN 99107970 CN99107970A CN1118787C CN 1118787 C CN1118787 C CN 1118787C CN 99107970 CN99107970 CN 99107970 CN 99107970 A CN99107970 A CN 99107970A CN 1118787 C CN1118787 C CN 1118787C
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- mother matrix
- micropore
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Abstract
The present invention discloses a manufacturing method of inlaying an anti-counterfeiting mark of a sowing micropore, and a testing device thereof. When the micropore distribution of microscopic particles is specified by a micropore master, the particle energy of a radiation source can be blocked by an inlay master according to presetting pictures or random pictures with different thicknesses. Therefore, through holes are inlaid in the micropores with different depths, and inlay patterns made during the manufacturing time can reappear from opalescence micropore patterns by a simple recognizer. By the method, the anti-counterfeiting capability grade is improved, and the interference of permeable and ventilate materials of cellulose, etc. is got rid of.
Description
The present invention relates to a kind of method for making and verifying attachment thereof of porous anti-fake mark, belong to the Application of Nuclear Technology technical field.
Because present people are the individual behavior of uncontrollable microscopic particle also, so have the anti-counterfeiting performance that the nuclear pore filter film of random distribution characteristic is used to improve anti-fake product gradually.On January 5th, 1994, invention disclosed " was made the method and the equipment thereof of anti-counterfeiting mark and trade mark " (application number is 93106945.9) with the nuclear radiation technology, invention disclosed on February 14th, 1996 " method for making of anti-false trademark or sign " (application number is 94104555.2), on September 10th, 1997 disclosed " a kind of preparation method of anti-false sign " (application number is 96120701.9) and on October 1st, 1997 disclosed " method of manufacturing technology of porous anti-fake mark and equipment " (application number is 97100122.7) have all been used nuclear miillpore filter technology.Its mechanism is to utilize heavy charged particle to pass through macroscopical stripping pattern irradiation on plastic foil, forms the milky micropore pattern after etching.Utilize the ventilative water permeability of its pattern to carry out truth identification.Because this method has not only been used complex apparatus and advanced technology, and has utilized the randomness of microscopic particle, so have very strong anti-counterfeiting power.Yet still there is following defective in this method, the first, and its micropore of each anti-counterfeiting mark distributes all different, and the possibility of carrying out special detection for thousands of anti-counterfeiting mark is very little, can't discern the vacation sign of making of identical device, material and technology; Second, utilize the water-permeable and air permeable method to detect and to distinguish the vacation sign of making, this shows, although make the randomness that anti-counterfeiting mark has utilized microscopic particle with nuclear pore filter film of cellulose membrane, if but do not solve the problems of the technologies described above, then its whole anti-counterfeiting performance will have significant limitation.
The object of the present invention is to provide the microcosmic that a kind of method for making of porous anti-fake mark and the depth phase embedding that verifying attachment utilizes micropore thereof, the big or small phase embedding of micropore, just anti-phase embedding realize that the regular variation of micropore information so both kept every piece of sign at random can not copying property, can definitely discern the false from the genuine by special phase embedding information again.
A kind of method for making of porous anti-fake mark is characterized in that this method may further comprise the steps:
1. carving Lou on the uniform solid material of thickness with predetermined pattern, film becomes collimation mother matrix 2;
2. will collimate mother matrix 2 is stacked on the film like solid trace material, be placed on irradiation in the heavy charged particle radiation source 1, or be mask with collimation mother matrix 2, utilize photoetching or microelectronic technique to form the pore type damage, after chemical etching, cleaning, oven dry, become micropore mother matrix 3;
3. make the phase embedding mother matrix 4 of the different figure of thickness with solid material;
4. between radiation source 1 and desire form the plastic foil 5 of nucleopore membranes, install successively collimation mother matrix 2 micropore mother matrixs 3 and mutually embedding mother matrix 4 finish irradiation;
5. the plastic foil behind the irradiation 5 is made sign according to common process, and common process comprises UV-irradiation, chemical etching, cleaning, oven dry, printing, gluing, cuts;
This phase embedding sowing anti-counterfeiting mark can be discerned the false from the genuine by the micropore distribution characteristics in the identification anti-counterfeiting mark, thereby reaches definite false proof purpose.
Described solid material is polyester, polycarbonate, polystyrene etc., the solid state track detector material is CR39, polycarbonate, polyester, mica, glass etc., the selection of collimation mother matrix, micropore mother matrix and heavy charged particle, charged particle energy, should follow following principle: but the heave hand particle energy can form the pierceability length of etch in the micropore mother matrix, but can not penetrate the collimation mother matrix; The charged particle energy can see through the thin hole (comprising perforation) that partly can form certain depth on the anti-counterfeiting mark film in the phase embedding mother matrix, see through the thicker part of phase embedding mother matrix and can not on the anti-counterfeiting mark film, form the hole, for example heavy charged particle uses iodide ion, energy is 247.6Mev, the accelerator heavy ion beam is defocused back irradiation 120 seconds, and the density of such perforation that can obtain on the micropore mother matrix is 6X10
6Cm
-2, phase embedding mother matrix thickness is 100 μ m than thickness portion, and thin part is respectively 30 μ m, 10 μ m and 0 μ m, and the argon ion with 120Mev selects the thick polycarbonate membrane of 10 μ m as the anti-counterfeiting mark film.Above-mentioned heavy charged particle radiation source also can be C
12, S
32Or fission fragment etc.
General plotting of the present invention is when micropore distributes in using micropore mother matrix standard anti-counterfeiting mark, adopt the method that changes phase embedding mother matrix thickness or distinguish irradiation in anti-counterfeiting mark film both sides, other at least one pattern of phase embedding sowing in macroscopical milky micropore pattern of anti-counterfeiting mark, that is to say, in the whole micropore distribution patterns of anti-counterfeiting mark, micropore and different depth micropore or positive and negative micropore are formed by boring a hole, this multi-layer microporous distribution, not only broken away from the interference of other poromerics, also discern advantage is provided, thereby reach purpose of the present invention for novel simple.
A kind of verifying attachment of implementing the used phase embedding sowing anti-counterfeiting mark of method of the present invention, form by contre electrode, basic electrode, power supply etc., contre electrode is made by metal materials such as stainless steel, brass, basic electrode is made by metal needles such as brass, insulation sleeve is made by insulating material such as teflon, organic glass, supply voltage is 500 volts to 3000 volts high pressure, and optimum value is 2500 volts of high pressure.Automatic spark counter principle according to automatic counting solid track detector, the contact pilotage of basic electrode is contacted with the aluminium film of anti-counterfeiting mark, contre electrode touches mutually with the front of anti-counterfeiting mark, open switch, under the high pressure effect, successively by micropore the aluminium film is discharged, the pattern that reveals original predetermined pattern again that is to say that the milky pattern on the anti-counterfeiting mark appears at phase embedding sowing pattern when making again under the effect of spark counter.
Can bring following good effect after the invention process:
The first, under the standard of micropore mother matrix, the microcosmic quantitative testing of anti-counterfeiting mark becomes possibility, because also being at random microscopic particle, micropore mother matrix itself distribute to form, so do not lose micro Distribution can not copying property second, under the situation of not losing the simple and easy recognition feature of former nucleopore membranes water-permeable and air permeable, increased the novel simple and easy recognition methods that spark counter reproduces phase embedding sowing pattern again, fundamentally break away from the interference to nucleopore membranes such as tunica fibrosa, improved anti-counterfeiting power.
Describe in detail below in conjunction with following accompanying drawing:
Fig. 1. for showing phase embedding sowing anti-counterfeiting mark irradiation synoptic diagram
Fig. 2. for showing open-work and blind hole subregion synoptic diagram is set
Fig. 3. for showing the assorted mutually synoptic diagram that is provided with of open-work and blind hole
Fig. 4. for showing macropore and aperture subregion synoptic diagram is set
Fig. 5. for showing the assorted mutually synoptic diagram that is provided with of macropore and aperture
Fig. 6. form the different graphic synoptic diagram for showing the multilayer nucleopore membranes
Fig. 7. form the micropore synoptic diagram for showing the nucleopore membranes both sides
Fig. 8. for showing the compound synoptic diagram of nucleopore membranes folder aluminium
Fig. 9. reproduce the synoptic diagram of phase embedding sowing for utilizing simple and easy recognizer
Embodiment 1
Present embodiment has illustrated open-work and the blind hole situation of embedding sowing mutually.
As shown in Figure 1, heavy charged particle 1 (120Mev ar-ion beam) sees through 4 dozens of collimation mother matrixs 2, micropore mother matrix 3, phase embedding mother matrix successively on anti-counterfeiting mark film 5, form the blind hole district of open-work district and different depth, wherein collimate mother matrix 2 is made predetermined pattern by customer requirements by the plastic plate of 2 millimeters thick leakage film; Micropore mother matrix 3 is made by following technology: the thick CR39 of 100 μ m is placed on the intrafascicular irradiation of 240Mev iodide ion, and according to beam intensity decision exposure time, making the pore density on the micropore mother matrix 3 is 6 * 10
6Cm
-2, put into 70 ℃, 6.25NNaOH aqueous solution then and be etched to perforation, clean the back oven dry and get final product; Phase embedding mother matrix 4 is the mask plates that are divided into different graphic by thickness, minimum thickness is 0, form open-work, other form the blind hole of different depth, if phase embedding mother matrix 4 its thickness subregion settings (as Fig. 2) then form the anti-counterfeiting mark of subregion phase embedding figure, if assorted mutually be provided with (as Fig. 3) of its thickness, then form the anti-counterfeiting mark of phase dephasign embedding figure, the anti-counterfeiting mark film is through putting into 70 ℃, etching in the 6NNaOH aqueous solution (its technology is identical with conventional nuclear pore filter film manufacture craft) gets final product, plate behind the layer of aluminum film 6 gluing more again, can become phase embedding sowing anti-counterfeiting mark 5 after cutting, as among Fig. 2 at the open-work track 8 of the △ shape of middle phase embedding of figure blind hole track 7, as among Fig. 3 at the figure middle phase embedding open-work track 8 at random of saturating track 7 not.When check, simple and easy recognizer contre electrode 22 is aimed at the pattern part that is pressed in anti-counterfeiting mark 5, basic electrode 20 links to each other with aluminium film 6, opening power 19, can pass contre electrode 22 high pressure from lead 21, by micropore the aluminium film is discharged, putting of a micropore of a micropore reproduced phase embedding pattern (as Fig. 9) till having put.
Embodiment 2
Present embodiment has illustrated macropore and the aperture situation of embedding sowing mutually.
As shown in Figure 1, whole technological process is identical with embodiment 1, just phase embedding mother matrix 4 thickness two parts all can make charged particle 1 produce the perforation track in anti-counterfeiting mark, only owing to thickness difference in the phase embedding mother matrix 4 makes energy loss variant, form macropore and aperture after etching, subregion setting is seen Fig. 4, and assorted mutually the setting seen Fig. 5, when check, as long as select the voltage of power supply 19 in the simple and easy recognizer promptly selectively to reproduce the pattern of macropore formation and the pattern that aperture forms.In Fig. 4, aperture track 9 is the subregion setting with macropore track 10; In Fig. 5, aperture track 9 is assorted setting mutually with macropore track 10.
Embodiment 3
Present embodiment has illustrated that the multilayer nucleopore membranes forms the situation of different pattern.
The nucleopore membranes 11 and 13 of using device as shown in Figure 1 earlier to make different pattern respectively then with nucleopore membranes 13 aluminizers, is pressed combination shown in Figure 6 to nucleopore membranes 11 and 13 again.Wherein nucleopore membranes 11 and 13 and basic paper 14 adhesive stickers 12 be harmonious, the anti-counterfeiting mark surface is a kind of pattern, is again a pattern after throwing off, and reproduces another kind of pattern again with simple and easy recognizer.
Present embodiment has illustrated the situation that forms different pattern in anti-counterfeiting mark film both sides respectively.
As shown in Figure 7, front track 15 is made by twice use device shown in Figure 1 respectively with reverse side track 16, the different pattern of positive and negative formation after simple and easy recognizer reproduces.
Present embodiment has illustrated the situation of the compound phase embedding of two nucleopore membranes therebetween aluminium.
As shown in Figure 8, two not homophase embedding nucleopore membranes use as shown in Figure 1 device to make respectively, nucleopore membranes 17 is bondd by adhesive sticker 12 aluminizer 6 backs respectively with nucleopore membranes 18, nucleopore membranes 18 is compound on the basic paper 14 by adhesive sticker 12 and becomes phase embedding sowing anti-counterfeiting mark, can reproduce demonstration with simple and easy recognizer to nucleopore membranes 17 and nucleopore membranes 18 respectively.
Claims (7)
1, a kind of method for making of porous anti-fake mark is characterized in that this method may further comprise the steps:
1.. carving Lou on the uniform solid material of thickness with predetermined pattern, film becomes collimation mother matrix (2);
2.. will collimate mother matrix (2) and be stacked on the film like solid trace material, be placed on irradiation in the heavy charged particle radiation source (1), or be mask with collimation mother matrix (2), utilize photoetching or microelectronic technique to form pore type and damage, after chemical etching, cleaning, oven dry, become micropore mother matrix (3);
3.. make the phase embedding mother matrix (4) of the different figure of thickness with solid material;
4.. form in radiation source (1) and desire install successively between the plastic foil (5) of nucleopore membranes collimation mother matrix (2) micropore mother matrix (3) and mutually embedding mother matrix (4) finish irradiation;
5.. the plastic foil behind the irradiation (5) is made sign according to common process, and common process comprises UV-irradiation, chemical etching, cleaning, oven dry, printing, gluing, cuts.
2, method for making as claimed in claim 1 is characterized in that described film like solid trace material is CR39, polycarbonate, polyester, mica, glass.
3, method for making as claimed in claim 1, it is characterized in that the selection of described micropore mother matrix (3) thickness and radiation source (1) particle energy, should follow following principle: radiation source (1) particle can not penetrate micropore mother matrix (3), makes the plastic foil (5) that know on false proof border but can penetrate.
4, method for making as claimed in claim 1, it is characterized in that described phase embedding mother matrix (4) made by plastic material, its thickness and block radiation source particles energy adapt, the selection of its thickness and radiation source (1) particle energy, should follow following principle: radiation source (1) particle can penetrate the plastic foil (5) of making anti-counterfeiting mark, and stopping of process phase embedding mother matrix (4) forms the micropore of different depth in the plastic foil (5) of anti-counterfeiting mark.
5, method for making as claimed in claim 1 is characterized in that radiation source (1) is I
127, Ar
40, c
12, s
32Or fission fragment.
6, the verifying attachment of the used porous anti-fake mark of a kind of method of implementing claim 1 is by power supply (19), contre electrode (22), basic electrode (20), insulation sleeve (23) and connect lead (21) and form.
7, verifying attachment as claimed in claim 6 is characterized in that contre electrode (22) made by metal material, and basic electrode (20) is made by metal needle, and insulation sleeve (23) is made by insulating material, and power supply (19) voltage is 2500 volts of high pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99107970 CN1118787C (en) | 1999-06-09 | 1999-06-09 | Porous anti-fake mark making process and testing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99107970 CN1118787C (en) | 1999-06-09 | 1999-06-09 | Porous anti-fake mark making process and testing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1277419A CN1277419A (en) | 2000-12-20 |
| CN1118787C true CN1118787C (en) | 2003-08-20 |
Family
ID=5273059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 99107970 Expired - Fee Related CN1118787C (en) | 1999-06-09 | 1999-06-09 | Porous anti-fake mark making process and testing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1118787C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106782038B (en) * | 2016-12-20 | 2022-12-13 | 深圳市华星祥科技有限公司 | Metal resin three-dimensional trademark and forming method thereof |
-
1999
- 1999-06-09 CN CN 99107970 patent/CN1118787C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1277419A (en) | 2000-12-20 |
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