CN111868920A

CN111868920A - Planarization for semiconductor device package fabrication process

Info

Publication number: CN111868920A
Application number: CN201980019163.5A
Authority: CN
Inventors: 陈翰文; S·文哈弗贝克; R·胡克; K·赵; 傅博诣
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2018-03-15
Filing date: 2019-02-15
Publication date: 2020-10-30
Also published as: TW201946162A; KR20200120766A; WO2019177742A1; KR102521991B1; TWI717690B; EP3766097A1; JP2021517360A; EP3766097A4; JP7258906B2

Abstract

A method of electronic device package fabrication, comprising: a planarizing liquid is dispensed into regions between adjacent features protruding from the substrate. The planarizing liquid is then processed to provide a hardened, substantially solid material in the regions between adjacent features. In some examples, the planarizing liquid can be a dielectric material used in forming the multi-level redistribution layer or an encapsulation resin material used to encapsulate the semiconductor chip. An example planarizing apparatus includes a substrate support, a liquid dispensing system configured to dispense a planarizing liquid onto a substrate, a curing system to cure the planarizing liquid, and a planarizing element system to press into the planarizing liquid.

Description

Planarization for semiconductor device package fabrication process

Background

Technical Field

The present disclosure generally relates to semiconductor device package manufacturing methods and apparatuses for semiconductor device package manufacturing.

Background

The packaging of semiconductor devices includes various steps in which a photo-patternable (photopatternable) material is deposited as a layer on a topographically uneven surface. For example, in some stages of manufacture, photo-patternable dielectric materials, such as polyimide materials, are used to form redistribution layers (RDLs) for making routing connections from chip surface contacts to Ball Grid Array (BGA) pads. In general, lithographic patterning processes are sensitive to topographical effects, such as differences in patterned layer height or thickness, due to limitations in the depth of focus (DOF) achievable in the exposure process. Planarization processes involving only spin-on materials are considered unsuitable for the intended patterning and packaging requirements of future devices due to the inability to adequately planarize topographical features present in some devices.

Disclosure of Invention

In one embodiment, a method of electronic device package fabrication includes: dispensing a planarizing liquid into regions between a plurality of adjacent features protruding from a substrate; and treating the planarizing liquid to harden the planarizing liquid to form a substantially solid material in the regions between adjacent features.

In another embodiment, a method of electronic device package fabrication includes: positioning a dry patterned film into regions between a plurality of adjacent features protruding from a substrate, pressing a planar member onto the dry patterned film on the substrate and heating the dry patterned film to form and planarize a flowable material; and treating the flowable material to harden the flowable material to form a substantially solid material in the region between adjacent features.

In yet another embodiment, a planarization apparatus includes: a substrate support on which a substrate can be placed; a liquid distribution system configured to distribute the planarizing liquid into regions between adjacent features protruding from the substrate; and a hardening system for hardening the planarizing liquid to form a substantially solid material in the region between adjacent features.

Drawings

Fig. 1 schematically depicts planarization problems that exist in electronic device package manufacturing processes.

Fig. 2 depicts a planarized trench fill method according to a first example.

Fig. 3 depicts a multi-layer method for building a planar redistribution dielectric layer over a patterned surface according to a second example.

Fig. 4 depicts a planarized trench fill method according to a third example.

Fig. 5 depicts a planarization method according to a fourth example.

Figure 6 schematically illustrates a planarization process in the redistribution dielectric layer fabrication process over the patterned surface of the high aspect ratio copper pillar.

Fig. 7 schematically illustrates a redistribution layer fabrication process including via-on-via stacking.

Fig. 8 depicts a planarized trench fill method according to a fifth example.

Figure 9 depicts a planarization apparatus in accordance with one embodiment.

FIG. 10 depicts a planarization apparatus in accordance with another embodiment.

Detailed Description

It is to be understood that both the foregoing general description and the following detailed description are exemplary and are intended to provide an overview or framework for understanding the nature and character of the claims. The accompanying drawings are included to provide a further understanding, and are incorporated in and constitute a part of this specification. The drawings illustrate example embodiments and, together with the description, serve to explain the principles and operations of various embodiments.

So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only certain embodiments and are therefore not to be considered limiting of its scope, for the scope of the disclosure may admit to other equally effective embodiments.

To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features disclosed with respect to any one embodiment may be beneficially incorporated in other embodiments without further recitation.

Additional features and advantages will be set forth in the detailed description which follows, and in part will be readily apparent to those skilled in the art from that description or recognized by practicing the embodiments as described herein, including the detailed description which follows, the claims, as well as the appended drawings.

Fig. 1 schematically depicts planarization problems encountered in various aspects of semiconductor device package fabrication. In general,

features

10 and 20 are arranged adjacent to each other on the underlying surface 30 by a distance d 1.

Features

10 and 20 may be semiconductor dies, interconnect elements, or any structure that creates a local or global uneven topography. The underlying surface 30 may be a substrate, a semiconductor die, an interconnect element exposed on the redistribution layer, or any base. The height of the feature 10 from the lower surface 30 is height h 1. The height of the feature 20 from the lower surface 30 is a height h 2. In general, heights h1 and h2 are arbitrary values. In many examples, the height h1 and the height h2 are substantially equal to each other, but this is not required. In some examples, the heights h1 and h2 are each on the order of micrometers (μm) or more, e.g., 1-10 micrometers each. The distance d1 is arbitrary, but in some examples may be on the order of millimeters (mm) or more, for example, about 5-15 mm. In other examples, the distance d1 may be sized from microns to tens of microns, such as 1 micron to 50 microns.

Generally, another device layer (or semiconductor chip) will be formed, stacked, or otherwise arranged over the

features

10 and 20. As part of forming another device layer in a conventional fabrication process, a deposition process intended to achieve a flat topography, such as a spin-on technique involving a polymer-type material 40, may be used. However, it has been found that this spin-only coating technique provides incomplete or otherwise unsatisfactory planarization results, depending on the actual dimensions of distance d1, height h1, and height h2, as well as other parameters, such as the viscosity of the polymeric material 40 and the rotational speed and angular acceleration during the spin-coating technique. Unsatisfactory planarization is represented by step height h3 in fig. 1. The step height h3 is the height from one of feature 10 and feature 20 to surface 50 of polymeric material 40.

The larger value of step height h3 tends to complicate subsequent manufacturing steps. This is especially true when multiple layers are to be formed on top of one another in a multi-level RDL manufacturing process. When multiple layers are stacked on top of each other, flatness differences may accumulate such that subsequent layers in the stack become difficult or impossible to properly form and pattern. The embodiments described herein (as shown in fig. 2-8) provide a step height h3 of about 0.1 microns to 1 micron, e.g., 0.3 microns.

In a particular embodiment, an electronic device package manufacturing method includes dispensing a planarizing liquid into regions between adjacent features protruding from a substrate, pressing a planarizing element onto the substrate to reshape the planarizing liquid to fill right between the adjacent features, treating the planarizing liquid while the planarizing element is over to harden the planarizing liquid to form a substantially solid material in the regions between the adjacent features, and removing the planarizing element after hardening of the planarizing liquid.

Fig. 2 depicts a planarization method according to a first example. In this first example, a plurality of dies 100 are disposed on a carrier substrate 200 at a distance d 1. The carrier substrate 200 may be a frame element. In this case, an adhesive layer (not specifically depicted) may be required to attach the die 100 to the carrier substrate 200. The frame element can be, for example, a glass substrate with a closed (blind) square cavity, and the die 100 can be placed in the cavity. As depicted, there is a trench region 220 between adjacent dies 100. The liquid dispenser 230 is configured to dispense droplets of the polymeric material 240 at various locations in the trough area 220. Droplets may be dispensed at various locations by movement of the liquid dispenser 230 relative to the carrier substrate 200, movement of the carrier substrate 200 relative to the liquid dispenser 230, or a combination of movement of the liquid dispenser 230 and the carrier substrate 200.

In this first example, droplets of polymer material 240 are dispensed into the areas between adjacent dies 100. Further, in this first example, no droplets of polymeric material 240 are dispensed directly on the upper surface of any die 100. The droplets of polymeric material 240 dispensed into the areas between adjacent dies 100 can include a matrix of droplets 260. After the droplets of polymeric material 240 have been dispensed, a cover element 250 is applied to the surface on the die 100 side of the substrate 200 to planarize the polymeric material 240. While the cover member 250 is positioned on the substrate, pressure, heat and/or UV radiation is applied to cure/harden the polymer material 240.

After pressure curing/hardening of the polymer material 240, the cover member 250 may be removed to leave the planarized polymer material 240 in the trench region 220. By controlling the dispensed amount, size, and/or location of the droplets of polymeric material 240, the upper surface of die 100 can remain free of polymeric material 240. Further, in some examples, the dispensed volume of the polymer material 240 can be greater than the volume of the region between the dies 100, as long as the step height created at the die edges is reduced.

The cover member 250 can be any material that is substantially planar in the relevant contact area. The cover member 250 can be a hard opaque material, a hard transparent material, a soft opaque material, or a soft transparent material. For example, the cover member 250 can be metal, glass, polymer, or a combination of these materials.

In a specific example, the distance d1 is about 10mm, the liquid dispenser 230 is an inkjet head type dispenser, the polymer material 240 is a polyimide material, the cover member 250 is pressed into contact with the substrate at about 5 bar, and the carrier substrate 200 is heated to about 150 ℃ before removing the cover member 250. In other examples, the contact pressure may be about 1 bar to about 15 bar, and the temperature may be from about 75 ℃ to about 175 ℃. In some examples, a transparent or at least partially transparent material is used for the cover element 250, and light can pass through the cover element 250 to cure and harden the polymer material 240. In a particular example, the light can be ultraviolet light, such as light provided by a mercury arc lamp or an excimer laser source. The step height, i.e., the height from one of the dies 100 to the top surface of the polymer material 240, is about 0.1 to 1 micron, such as 0.3 microns.

Fig. 3 depicts a planarization method according to a second example. This second example can be used to form a first RDL dielectric layer, and more particularly, to form a substantially planar first RDL layer. In a second example, a plurality of dies 100 are disposed on carrier substrate 300 at a distance d 1. The liquid dispenser 330 is configured to dispense the polymeric material 340 at various locations within the trench region 220 between adjacent dies 100.

In this second example, no polymeric material 340 is dispensed directly from the liquid dispenser 330 on the upper surface of any of the dies 100. However, in other examples, some amount of the polymeric material 340 can be dispensed directly on one or more of the dies 100, however in these other examples, the amount of the polymeric material 340 dispensed directly onto the upper surface of the die 100 may be less than the amount of the polymeric material 340 dispensed into the trench region 220.

Droplets may be dispensed at various locations by movement of the liquid dispenser 330 relative to the carrier substrate 300, movement of the carrier substrate 300 relative to the liquid dispenser 330, or a combination of movement of the liquid dispenser 330 and the carrier substrate 300.

After the polymer material 340 has been dispensed in the trench region 220, the substrate 300 undergoes a spin coating process, such as several hundred to several thousand RPM (revolutions per minute). It has been found that preferential dispensing of the polymer material 340 into the trench regions 220 prior to the spin process results in a significant step height reduction that is not provided by conventional spin coating processes in which the polymer material may simply form a layer having a topography similar to the underlying surface.

Fig. 3 depicts the substrate 300 being rotated while the liquid dispenser 330 applies additional polymeric material 345 (also referred to as overcoat spray) to the substrate 300. In some examples, additional application of the polymer material 345 during the spinning process may be optional or unnecessary depending on the relative volume of the trench regions 220 and the amount of polymer material 340 dispensed prior to the spinning process. The step height, i.e., the height from one of the dies 100 to the top surface of the polymer material 340, is about 0.1 to 1 micron, such as 0.3 microns. The pressing or molding by the cover element 250 is not depicted in fig. 3, but in other examples, this second example process may be combined in whole or in part with the first example process. In some examples, the polymer material 345 may be a photo-patternable material (e.g., photoresist) and may retain the ability to be photo-patterned in a photolithography process after the planarization process has been completed.

In a particular example, the distance d1 is about 10mm, the liquid dispenser 330 is a spray-type nozzle, and the polymer material 340 and/or the polymer material 345 is a polyimide material that has been diluted with a solvent, such as N-methyl pyrrolidone (NMP) or the like, to reduce the viscosity so that the resulting solution can pass through the spray-type nozzle and/or facilitate the spin-coating process.

In some examples, the liquid dispenser 330 may include different nozzles or liquid output ports for initial dispensing of the polymer material 340 to the trough region 220, as well as subsequent dispensing of the polymer material 340 for a spin coating process. In other examples, the liquid dispenser 330 may use the same nozzle or liquid output port to dispense the polymer material 340 into the trench region and for a subsequent spin coating process.

In some examples, the polymeric material 345 may be planarized by techniques other than spin coating, such as screen printing, doctor blade coating, or the like. Generally, the polymer material 345 may be baked to a temperature after planarization below a temperature at which the polymer material 345 substantially loses its ability to be photopatterned.

Fig. 4 depicts a planarization method according to a third example. In this third example, a plurality of dies 100 are disposed on a carrier substrate 400 at a distance d 1. The inkjet nozzle 430 is used to dispense a planarizing material 440 into the trench region 220. Generally, the planarization material 440 is a low viscosity, low surface tension curable material that expands within the trench region 220 to provide a substantially planar upper surface.

The exposed surfaces of the planarization material 440 and/or the trench region 220 may be modified or selected such that the planarization material 440 has a low contact angle with the exposed surfaces of the trench region 220. The planarization material 440 flows within the trench region 220, as depicted in fig. 4.

After the planarization material 440 flows within the trench region 220, the planarization material can be subjected to a curing/hardening process, such as exposure to heat or ultraviolet light. The amount of planarization material 440 dispensed within the trench region 220 and the dispensing location within the trench region 220 may be selected such that the trench region 220 is substantially filled with the planarization material 440. In some examples, it may be sufficient to only partially fill the trench region 220 with the planarization material 440 in order to reduce the step height between the edge of the die 100 and the bottom of the trench region (the upper surface of the planarization material).

After the planarization material 440 is cured, an additional planarization process may be performed to achieve better or more complete planarization, as desired. For example, the process of the third example may be combined with one or both of the process of the first example or the process of the second example. The step height, i.e., the height from one of the dies 100 to the top surface of the planarization material 440, is about 0.1 to 1 micron, e.g., 0.3 microns.

In general, the planarization material 440 may be: any material that is capable of planarizing flow within the trench region 220 under compatible process conditions (e.g., temperature and pressure conditions) for manufacturing. In some examples, the planarizing material 440 can be a UV curable urethane-based acrylate, a UV curable polyester-epoxy, or a UV curable epoxy-based acrylate. In some examples, the planarization material 440 may preferably have a viscosity of about 13 to about 15 centipoise (cP) at 21 ℃. The planarization material 440 may also be selected to provide relatively little volume shrinkage after curing.

In a particular example, the distance d1 is about 10mm, the inkjet nozzle 430 is one of a plurality of nozzles in an inkjet head type device, and the planarizing material 440 is a urethane-based acrylate material that is UV curable at 21 ℃ with a viscosity of about 14.5 cP.

Fig. 5 depicts a fourth example of a planarization process. This fourth example can be used to form RDL dielectric layers, and more particularly, to form substantially planar RDL layers. In this fourth example, a plurality of wires 510 are arranged on the substrate 500. The placement and spacing between adjacent wires 510 on the substrate 500 is generally set according to circuit design, device packaging parameters, and manufacturability requirements. Also, the individual widths of wires 510 are configured according to circuit design, component packaging parameters, and manufacturability requirements. The RDL wiring pattern is not limited to a simple line/space pattern, but may include other pattern components such as fan-out arrays, serpentine structures, comb structures, contact pads, inter-layer interconnects, metal posts, circuit components, or the like. The number of RDL layers in the final device is typically between 2 and 4.

In at least some regions of the RDL layer, the spacing d2 between adjacent wires 510 may be about 1 micron to tens of microns, such as about 1 micron to about 50 microns. The cross-sectional width of each wire 510 may have similar dimensions. In the fabrication of the RDL layer, the step height between the upper surface of the metal layer and the upper surface of the dielectric layer may be about 5 to about 10 microns or so. Because multiple RDL layers are to be stacked one on top of the other, unevenness in the lower RDL can adversely affect the upper layers. In connection with this, the ability to perform patterning associated with the fabrication of RDL layers can be adversely affected by non-planar layers because the lithography tools used for patterning have limited depth of focus (DOF).

In a fourth example, a liquid dispenser 530 dispenses a polymeric material 540 onto a substrate 500. The polymer material 540 is dispensed to cover the wires 510 and fill the spaces 515 between the wires 510. As depicted, the polymeric material 540 does not initially have a flat upper surface, but rather provides a conformal-type coating, wherein the upper surface of the polymeric material 540 corresponds to the underlying substrate 500 topography, i.e., the topographical pattern formed by the wires 510 and spaces 515 together. The freshly dispensed polymeric material 540 can optionally be subjected to a spin coating process to dispense the polymeric material on the substrate 500. In some examples, the polymeric material can have a viscosity of about 1000 centipoise (cP) or greater at 25 ℃.

In a subsequent step, the planar element 550 is placed in contact with the polymeric material 540. The planar element 550 may be pressed into the polymeric material 540 with sufficient force to conform the polymeric material 540 to the planar element 550. In some examples, the planar element 550 may be heated and/or the substrate 500 may be heated to facilitate molding of the polymeric material 540.

The pressing and/or heating may be performed under low pressure or vacuum conditions to limit void formation and/or facilitate void removal in the polymeric material 540, which may be caused by trapped or entrained gases within the polymeric material 540. After being pressed against with the planar element 550, the planar element 550 is removed, leaving a planarized upper surface of the polymer material 540. Generally, in this example, no UV exposure is used to cure/harden the polymer material 540, as the planarizing polymer material 540 will serve as a photo-patternable dielectric material for forming subsequent RDL layers. In particular, the planarized polymer material 540 would be subjected to a photolithography process using UV light to selectively harden portions of the polymer material 540 according to a photomask pattern corresponding to the desired wiring pattern of the subsequent RDL layer. The unexposed/hardened portions of the polymeric material 540 are then removed by wet development in a solvent or the like.

If the polymeric material 540 remains photopatternable after the planarization process, the heating during pressing against the planarization element 550 must be limited with respect to the applied temperature and time to prevent the entire polymeric material 540 from curing/hardening before UV patterning can occur.

In a particular example, the polymer material 540 is a photosensitive polyimide material. Heating to a maximum temperature of about 120 ℃ to about 160 ℃ during the planarization process, a hold-down time of about 3 minutes to about 12 minutes, and an applied pressure of between about 5 bars to about 10 bars.

In some examples, the planar element 550 can be a flexible silicone polymer material, such as Polydimethylsiloxane (PDMS), a hard polymer material, such as Fluorinated Ethylene Propylene (FEP) or Ethylene Tetrafluoroethylene (ETFE), a glass plate, a metal plate, or a combination thereof.

The liquid dispenser 530 can be a spray-type nozzle, an inkjet-type nozzle, a plurality of such elements, or a combination of such elements.

Fig. 6 depicts a planarization process according to an example use in fabricating a multilayer RDL structure. Metal features 610 are formed on the chip substrate 600. A photo-patternable dielectric material 630 is applied on the substrate 600. While the substrate 600 is under vacuum, a planar mold 650 is pressed into the photo-patternable dielectric material 630. As depicted, the vacuum or low pressure conditions facilitate the elimination of voids from the photo-patternable dielectric material 630.

In a subsequent step, a portion of the photo-patternable dielectric material 630 is removed in a photolithography process. The planarization process with mechanical planarization achieves high aspect ratio metal pillar patterning. In conventional RDL fabrication processes, non-planar surfaces of the photopatternable dielectric material 630 over the metal features 610 (such as in the device state depicted in fig. 6 prior to mechanical pressing) can complicate the lithographic processing due to, for example, depth of focus limitations of the lithographic tool.

Fig. 7 depicts a planarization process according to an example for forming a via-on-via stack structure in a multilayer RDL structure. The planarization process described above in connection with fig. 6 is repeated to form additional RDL layers. As the planarity of the photopatternable dielectric material 630 is improved, the photolithography process for the higher RDL layer can be performed with higher layer-to-layer alignment accuracy, allowing the formation of stacked via structures 710.

Fig. 8 depicts a planarization method according to a fifth example. In this example, a plurality of dies 100 are disposed on carrier substrate 800 by a distance d 1. The carrier substrate 800 may be a frame element. In this case, an adhesive layer (not specifically depicted) may be required to attach the die 100 to the carrier substrate 800. The frame element can be, for example, a glass substrate with an enclosed square cavity in which the die 100 can be placed. As depicted, there is a trench region 220 between adjacent dies 100. The dry patterned film 850 is located in the trench region 220. The dry patterned film 850 can be positioned in the trench region 220 (shown in fig. 9 and 10) as further described herein by a handling system. The dry patterned film 850 may be positioned in the trench region 220 by disposing the dry patterned film 850 on the cover member 250 such that the dry patterned film 850 is aligned within the trench region 220. The cover member 250 is applied to the surface on the die 100 side of the substrate 800 to position the dry patterned film 850 in the trench region 220.

The dry patterned film 850 comprises a material that is flowable when exposed to a temperature of about 90 ℃ to about 100 ℃. After the dry patterned film 850 is positioned in the trench region 220, the dry patterned film 850 is pressurized and heated. When the cover member 250 is applied to the surface on the die 100 side of the substrate 800 to planarize the flowable material 852, the substrate support (shown in fig. 9 and 10) may be heated to expose the dry patterned film 850 to form the flowable material 852. Pressure, heat, and/or UV radiation is applied to cure/harden the flowable material 852 while the cover member 250 is positioned on the substrate 800. The flowable material 852 forms a solid material 854 in the trench region 220. The step height, i.e., the height from one of the dies 100 to the top surface of the solid material 854, is about 0.1 microns to 1 micron, e.g., 0.3 microns. In a particular example, the dry patterned film 850 is composed of an epoxy material with a silica filler. Laser ablation is applied to pattern the blanket dry film sheet.

Fig. 9 depicts a planarization apparatus 900. The planarization apparatus includes a substrate support 910, and a substrate 920 can be placed on the substrate support 910. The substrate support 910 may be a vacuum chuck or the like for supporting the substrate 920 during various processing steps. The handling system 960 can be incorporated to place and remove the substrate 920 from the substrate support 910. A handling system 960 can also be included to position the dry patterned film 850 in the trench region 220.

In some examples, the handling system 960 may include a robotic arm or other mechanical device for moving the substrate 920 to the substrate support 910. In some examples, the handling system 960 may include a load lock or the like. The substrate support 910 is inside the chamber 970 or otherwise movable so as to be within the chamber 970 during certain operating conditions.

In some examples, chamber 970 (or portions thereof) may be controllable to have an internal pressure different than atmospheric pressure, e.g., vacuum conditions. Similarly, the chamber 970 (or portions of the chamber) may be operated with compositions other than standard air, for example, a low oxygen, pure nitrogen, or argon atmosphere may be provided within the chamber 970.

The liquid distribution system 935 of the planarization apparatus includes a distribution point 930. The liquid distribution system 935 stores materials such as polymer material 240, polymer material 340, planarization material 440, polymer material 540, or the like. The liquid stored in the liquid distribution system 935 can be referred to as a planarization layer precursor material 940.

The dispensing point 930 is an inkjet nozzle, an inkjet head comprising a plurality of inkjet nozzles, a spray-type nozzle, a spray head comprising a plurality of spray-type nozzles, or generally any such device or port: liquid from the liquid distribution system 935 can be dispensed from the device or port to any device or port in the chamber 970. The dispensing point 930 can be, for example, a liquid dispensing head, a droplet ejector, a spray nozzle, or a plurality or combination of these components. The dispensing point 930 is movable within the chamber 970 to enable liquid to be dispensed to a particular portion of the substrate 920. For example, the liquid dispensing system 935 may include a mechanism for moving the dispensing point 930 in an X-Y coordinate system that corresponds to the plane of the upper surface of the substrate 920.

In addition to or in place of the mechanism for moving the dispense point 930 relative to the substrate 920, the substrate support 910 can include or be attached to a mechanism for moving the substrate 920 relative to the dispense point 930. The substrate support 910 may also include a rotation mechanism that allows the substrate 920 to rotate. In some examples, the rotation mechanism of the substrate support 910 may allow for spin-coating type processes with speeds of hundreds to thousands of RPM.

The substrate support 910 and/or the chamber 970 may be capable of: heating the substrate 920 for the purpose of at least one of baking, curing, and/or hardening the planarization layer precursor material 940; exposing the dry patterned film 850 to a temperature of about 90 ℃ to about 100 ℃ to form a flowable material 852; and baking, curing, and/or hardening the flowable material 852. Optionally, the planarization apparatus 900 can include an exposure system 980 for at least one of: supplying light to the substrate 920 to cure/harden one of the planarization layer precursor materials 940; exposing the dry patterned film 850 to a temperature of about 90 ℃ to about 100 ℃ to form a flowable material 852; and curing/hardening the flowable material 852. The planarizing apparatus 900 can be coupled to a substrate processing track system, cluster-type processing apparatus, or a multi-function substrate processing apparatus, or the planarizing apparatus 900 can be an integrated part of a substrate processing track system, cluster-type processing apparatus, or multi-function substrate processing apparatus.

The exposure system 980 may include various components required to provide light to the substrate 920, such as mirrors, lenses, liquid light guides, filters, or the like. The exposure system 980 may include or be attached to a light source, such as a UV lamp, an IR heating lamp, or the like. The exposure system 980 is movable within the chamber 970. In some examples, the chamber 970 may incorporate a window portion that allows the exposure system 980 to supply light to the sealed chamber 970 from the outside. In some examples, the exposure system 980 may be optional, and hardening of the planarizing liquid can be provided by heating (such as through the chamber 970 or the substrate support 910). The curing system in the planarization apparatus 900 can be considered to correspond to at least one of the following: a heating element of the chamber 970, a heating element in the substrate support 910, and an exposure system 980. For example, a heating element in the substrate support 910 heats the substrate 920 to expose the dry patterned film 850 to a temperature of about 90 ℃ to about 100 ℃ to form the flowable material 852 and cure/harden the flowable material 852.

Fig. 10 depicts a planarization apparatus 1000. In general, the planarizing apparatus 1000 is similar to the planarizing apparatus 900 described above, with the difference that a system of planar elements 1010 is added. Common components between the two examples are given the same reference numerals in the figures. Planar element system 1010 includes a planar element support 1015 for securing a planar element 1020. The planar element 1020 is a flat mold assembly, an unpatterned mold assembly, a flat plate assembly, or the like.

Generally, the planar element 1020 corresponds in structure and function to the covering element 250 and/or the planar element 550, as described in the above examples. The planar element system 1010 includes a mechanism for placing the planar element 1020 in contact with the substrate 920. The planar element system 1010 presses the planar element 1020 into the substrate 920 at a controllable pressure level.

The liquid distribution system 935 and the exposure system 980 are depicted in a partially retracted position in fig. 10 so that movement of the planar element system 1010 and/or the substrate support 910 is not impeded. However, in some examples, the chamber 970 may be divided (divided) or configured in separate portions such that the dispensing of liquid can be done in one portion of the chamber 970 and the pressing against planarization can be done in another portion of the chamber 970. The substrate support 910 may be moved (or moved) between different portions or sections of the chamber 970. Similarly, in some examples, the liquid distribution system 935 may be omitted entirely from the planarization apparatus 1000, and the distribution of liquid may be performed in the planarization apparatus 900 specifically connected to (or otherwise associated with) the planarization apparatus 1000. Likewise, the exposure by exposure system 980 (when provided) may be performed in different portions or sections of chamber 970.

The planar element system 1010 may also provide transparent or transmissive portions that allow one of the planarization layer precursor material 940 and the flowable material 852 to be photocured or photocured by the planar element 1020 (or otherwise).

The planar element system 1010 may include a heating assembly to heat the planar element 1020 before or during pressing into the substrate. The flat element system 1010 may incorporate an X-Y translation mechanism for positioning the flat element 1020 relative to the substrate 920. Theta (theta), plane tilt, or other movement control may also be configured in the planar element system 1010.

The compression between the substrate 920 and the planar element 1020 may be achieved by Z-direction movement provided by either or both of the planar element system 1010 or the substrate support 910. In some examples, the pressure may be applied by providing an increased gas pressure supplied to the planar element 1020 and/or the backside of the substrate 920. The planar element 1020 may have substantially the same planar area size as the substrate 920 such that the entire substrate 920 is planarized at the same time. Alternatively, the planar element 1020 may have a planar area size smaller than the substrate 920, such that only a portion of the substrate 920 is planarized at a time. In some examples, the planar element 1020 may be larger in planar area dimension than the substrate 920 such that a portion of the planar element 1020 overhangs the outermost edge of the substrate 920 during pressing.

The dry patterned film 850 may be disposed on the planar member 1020 by a handling system 960 such that the dry patterned film 850 is aligned with the trench region 220. The planar device system 1010 presses the planar device 1020 into the substrate 920 at a controllable pressure level to position the dry patterned film 850 in the trench region 220.

Generally, the dry patterned film 850 is exposed to form the flowable material 852 for the purpose of at least one of baking, curing, and hardening the planarization layer precursor material 940, and the at least one of baking, curing, and hardening the flowable material 852 may be performed by heating provided by any one of the chamber 970, the substrate support 910, or the planar element system 1010 (or a combination of these aspects). In some examples where one of the planarization layer precursor material 940 and the flowable material 852 can be cured with light, the exposure system 980 can be used for hardening. The curing system in the planarization apparatus 1000 can be considered to correspond to at least one of: a heating assembly of the chamber 970, a heating assembly in the substrate support 910, a heating assembly and/or a light curing source in the planar element system 1010, and an exposure system 980.

While the foregoing is directed to particular embodiments of the present disclosure, it is to be understood that these embodiments are merely illustrative of the principles and applications. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other embodiments may be devised without departing from the spirit and scope of the present disclosure as expressed by the appended claims.

Claims

1. A method of electronic device package fabrication, comprising:

dispensing a planarizing liquid into regions between adjacent features protruding from the substrate; and

treating the planarizing liquid to harden the planarizing liquid to form a substantially solid material in the regions between the adjacent features.

2. The method of claim 1, wherein

The adjacent features are a plurality of semiconductor chips; and

the planarizing liquid is an encapsulating resin precursor.

3. The method of claim 1, wherein the planarizing liquid is an epoxy precursor.

4. The method of claim 1, wherein a distance between the adjacent features is greater than 1 millimeter.

5. The method of claim 1, wherein treating the planarizing liquid to harden the planarizing liquid comprises: exposure to one or more of ultraviolet light and heating.

6. The method of claim 1, wherein the planarizing liquid is dispensed into the regions between adjacent features via a spray nozzle.

7. The method of claim 1, wherein a volume of planarizing liquid dispensed into the region between adjacent features is less than or equal to a volume of the region between adjacent features.

8. The method of claim 1, further comprising:

dispensing an additional amount of the planarizing liquid onto the substrate for a spin coating process prior to treating the planarizing liquid for hardening.

9. The method of claim 1, further comprising:

pressing a planar element into the substrate before treating the planarizing liquid to harden.

10. The method of claim 9, further comprising:

after treating the planarizing liquid to harden, removing the planarizing element from the substrate.

11. A method of electronic device package fabrication, comprising:

positioning a dry patterned film in regions between adjacent features protruding from a substrate;

pressing a planarization member onto the dry patterned film on the substrate and heating the dry patterned film to form and planarize a flowable material; and

Treating the flowable material to harden the flowable material to form a substantially solid material in the regions between the adjacent features.

12. The method of claim 11, wherein a height from one of the adjacent features to a top surface of the substantially solid material is about 0.1 to 1 micron.

13. A planarization apparatus, comprising:

a substrate support on which a substrate can be placed;

a liquid distribution system configured to distribute a planarizing liquid into regions between adjacent features protruding from the substrate; and

a hardening system for hardening the planarizing liquid to form a substantially solid material in the regions between the adjacent features.

14. The planarization apparatus of claim 13, wherein

The liquid dispensing system includes an ink-jet head,

the hardening system comprises at least one of: a heating element for heating the substrate; and an ultraviolet exposure system for exposing the substrate to ultraviolet light.

15. The planarization apparatus of claim 13, further comprising:

a system of planar elements configured to press a substantially flat planar element into the planarization fluid and remove the substantially flat planar element from the planarization fluid, wherein

The curing system includes a heating element for heating the substrate.