CN111864038A - Display panel, display device and preparation method of display panel - Google Patents
Display panel, display device and preparation method of display panel Download PDFInfo
- Publication number
- CN111864038A CN111864038A CN201910350474.1A CN201910350474A CN111864038A CN 111864038 A CN111864038 A CN 111864038A CN 201910350474 A CN201910350474 A CN 201910350474A CN 111864038 A CN111864038 A CN 111864038A
- Authority
- CN
- China
- Prior art keywords
- electrode
- groove
- anode
- cathode
- injection layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 238000002347 injection Methods 0.000 claims abstract description 64
- 239000007924 injection Substances 0.000 claims abstract description 64
- 238000005530 etching Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000003466 welding Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 5
- 238000010008 shearing Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The embodiment of the disclosure relates to a display panel, a display device and a preparation method of the display panel. The display panel comprises a circuit substrate and an epitaxial wafer, wherein an anode and a cathode are arranged on the same side of the circuit substrate; the epitaxial wafer comprises an electron injection layer, wherein a light-emitting layer, a hole injection layer and an electrode layer are sequentially stacked in a first area on the surface of the electron injection layer; the electrode layer is connected with the first electrode, and a second area on the surface of the electron injection layer is connected with the second electrode; the first electrode is connected with the anode in an embedded mode, and/or the second electrode is connected with the cathode in an embedded mode. The embodiment of the disclosure can ensure that the electrode of the epitaxial wafer and the electrode of the circuit substrate are firmly welded, the transfer yield of the Micro-LED is improved, the current transmission efficiency is improved, and the display brightness of the Micro-LED display panel is improved.
Description
Technical Field
The embodiment of the disclosure relates to the technical field of display, in particular to a display panel, a display device and a preparation method of the display panel.
Background
With the development of the electronic industry, various display panels are emerging in succession, and Micro-LED display panels integrating the advantages of low power consumption, high brightness, ultrahigh resolution, color saturation, fast response, super power saving, long service life, high efficiency and the like are concerned.
In the related art, the Micro-LED display panels still have many problems after batch transfer, for example, the sapphire substrate is peeled off during laser lift-off, and the epitaxial wafer falls off due to the infirm electrode welding. In addition, the current electrode connection mode limits the current transmission and influences the display brightness of the Micro-LED.
Accordingly, there is a need to ameliorate one or more of the problems with the related art solutions described above.
It is noted that this section is intended to provide a background or context to the embodiments of the disclosure that are recited in the claims. The description herein is not admitted to be prior art by inclusion in this section.
Disclosure of Invention
An object of the embodiments of the present disclosure is to provide a display panel, a display device, and a method for manufacturing the display panel, thereby overcoming, at least to some extent, one or more of the problems due to the limitations and disadvantages of the related art.
According to a first aspect of the embodiments of the present disclosure, there is provided a method for manufacturing a display panel, including:
providing a circuit substrate, and preparing and forming an anode and a cathode on the same side of the circuit substrate;
providing an epitaxial wafer, wherein the epitaxial wafer comprises a substrate, the surface of the substrate is provided with an electron injection layer, and a light-emitting layer, a hole injection layer and an electrode layer are sequentially stacked in a first region on the surface of the electron injection layer;
Preparing a first electrode in at least partial region of the electrode layer, and preparing a second electrode in a second region on the surface of the electron injection layer;
the first electrode is connected with the anode in a embedding way, and/or the second electrode is connected with the cathode in a embedding way;
and stripping the substrate.
In one embodiment, the step of preparing a first electrode in at least a partial region of the electrode layer comprises:
preparing and forming a first electrode with a first groove at the end part in at least partial region of the electrode layer;
the step of connecting the first electrode to the anode in a nested manner includes:
the anode portion is inserted into the first groove of the first electrode and welded.
In one embodiment, the step of preparing a second electrode on a second region of the surface of the electron injection layer comprises:
preparing and forming a second electrode with a second groove at the end part in a second area on the surface of the electron injection layer;
the step of connecting the second electrode to the cathode in an embedded manner, comprising:
the cathode portion is inserted into the second groove of the second electrode and welded.
In one embodiment, the step of forming an anode and a cathode on the same side of the circuit substrate comprises:
Preparing an anode with a third groove at the end part and/or a cathode with a fourth groove at the end part on the same side of the circuit substrate;
the step of connecting the first electrode to the anode in a nested manner includes:
embedding the first electrode part into a third groove of the anode and welding;
and/or, the step of connecting the second electrode in embedded relation with the cathode comprises:
the second electrode portion is inserted into the fourth groove of the cathode and welded.
In one embodiment, the first electrode and/or the second electrode are prepared in a columnar structure or a truncated cone-shaped structure.
In one embodiment, the anode and/or the cathode are prepared in a columnar structure or a truncated cone structure.
In one embodiment, the step of preparing a first electrode on at least a partial region of the electrode layer and preparing a second electrode on a second region of the surface of the electron injection layer comprises:
etching at least part of the electrode layer to form a first groove, and preparing and forming the first electrode in the first groove so that the first electrode is partially embedded into the first groove; and/or the presence of a gas in the gas,
and etching a second region on the surface of the electron injection layer to form a second groove, and preparing and forming the second electrode in the second groove so as to embed part of the second electrode into the second groove.
In one embodiment, the step of forming an anode and a cathode on the same side of the circuit substrate comprises:
etching the surface of the same side of the circuit substrate to form a third groove and/or a fourth groove;
preparing and forming the anode in the third groove so that the anode is partially embedded in the third groove; and/or the presence of a gas in the gas,
preparing and forming the cathode in the fourth groove so that the cathode is partially embedded in the fourth groove.
According to a second aspect of the embodiments of the present disclosure, there is provided a display panel including:
the circuit board is provided with an anode and a cathode on the same side;
the epitaxial wafer comprises an electron injection layer, wherein a light-emitting layer, a hole injection layer and an electrode layer are sequentially stacked in a first region on the surface of the electron injection layer; the electrode layer is connected with the first electrode, and a second area on the surface of the electron injection layer is connected with the second electrode;
the first electrode is connected with the anode in an embedded mode, and/or the second electrode is connected with the cathode in an embedded mode.
In one embodiment, one end of the first electrode near the anode has a first groove, and the anode is partially embedded in the first groove of the first electrode; or
The end of the anode close to the first electrode is provided with a third groove, and the first electrode is partially embedded into the third groove of the anode.
In one embodiment, one end of the second electrode near the cathode has a second groove, and the cathode is partially embedded in the second groove of the second electrode; alternatively, the first and second electrodes may be,
one end of the cathode close to the second electrode is provided with a fourth groove, and the second electrode is partially embedded into the fourth groove of the cathode.
In one embodiment, the first electrode and/or the second electrode is a columnar structure or a truncated cone-like structure.
In one embodiment, the electrode layer has a first trench in which the first electrode is partially embedded; and/or the second region of the electron injection layer has a second trench in which the second electrode is partially embedded.
In one embodiment, the anode and/or the cathode are columnar structures or truncated cone-shaped structures.
In one embodiment, the circuit substrate surface has a third groove and/or a fourth groove, the anode portion is embedded in the third groove, and/or the cathode portion is embedded in the fourth groove.
According to a third aspect of the embodiments of the present disclosure, there is provided a display device including the display panel of the above embodiments.
The technical scheme provided by the embodiment of the disclosure can have the following beneficial effects:
in the embodiment of the disclosure, by the display panel, the display device and the preparation method of the display panel, on one hand, the electrode of the epitaxial wafer is embedded with the electrode of the circuit substrate, so that the contact area between the electrode of the epitaxial wafer and the electrode of the circuit substrate can be increased, the electrode of the epitaxial wafer is firmly welded with the electrode of the circuit substrate, the epitaxial wafer is prevented from falling off due to the insecure welding of the electrode when the substrate is lifted off, the transfer yield of the Micro-LED is improved, the current transmission efficiency is improved, and the display brightness of the Micro-LED display panel is improved; on the other hand, the electrode part of the epitaxial wafer is embedded into the epitaxial wafer, and the electrode part of the circuit substrate is embedded into the circuit substrate, so that the electrode is stabilized, and the electrode is prevented from falling off when a transverse shearing force is applied to the electrode.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty.
Fig. 1 illustrates a schematic structural diagram of one display panel in an exemplary embodiment of the present disclosure;
FIG. 2 shows a schematic structural diagram of one display panel in an exemplary embodiment of the present disclosure;
fig. 3 illustrates a schematic structural diagram of an epitaxial wafer electrode in one display panel in an exemplary embodiment of the present disclosure;
FIG. 4 is a schematic diagram illustrating a structure of a circuit substrate electrode in one display panel according to an exemplary embodiment of the disclosure;
FIG. 5 shows a schematic structural diagram of one display panel in an exemplary embodiment of the present disclosure;
FIG. 6 shows a flow chart of a method of fabricating a display panel in an exemplary embodiment of the present disclosure;
fig. 7 illustrates a schematic structural diagram of an epitaxial wafer in one display panel in an exemplary embodiment of the present disclosure;
fig. 8 is a schematic view illustrating a structure of a circuit substrate in one display panel according to an exemplary embodiment of the present disclosure.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
Furthermore, the drawings are merely schematic illustrations of embodiments of the disclosure and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and thus their repetitive description will be omitted. Some of the block diagrams shown in the figures are functional entities and do not necessarily correspond to physically or logically separate entities.
First, in the present exemplary embodiment, there is provided a display panel, which may include a circuit substrate 1 and an epitaxial wafer 2, as shown in fig. 1. Wherein, the anode 3 and the cathode 4 are arranged on the same side of the circuit substrate 1; the epitaxial wafer 2 comprises an electron injection layer 5, wherein a light-emitting layer 7, a hole injection layer 8 and an electrode layer 9 are sequentially stacked in a first region 6 on the surface of the electron injection layer 5; the electrode layer 9 is connected with the first electrode 10, and the second region 11 on the surface of the electron injection layer 5 is connected with the second electrode 12; the first electrode 10 is connected in an embedded manner to the anode 3 and/or the second electrode 12 is connected in an embedded manner to the cathode 4.
Through the display panel, the electrode of the epitaxial wafer is embedded with the electrode of the circuit substrate, so that the contact area between the electrode of the epitaxial wafer and the electrode of the circuit substrate can be increased, on one hand, the electrode of the epitaxial wafer and the electrode of the circuit substrate can be firmly welded, the epitaxial wafer is prevented from falling off due to infirm welding when the epitaxial wafer is lifted off the substrate, and the transfer yield of Micro-LEDs is improved; on the other hand, the current transmission efficiency can be improved, and the display brightness of the Micro-LED display panel can be improved.
Hereinafter, each part of the above-described display panel in the present exemplary embodiment will be described in more detail with reference to fig. 1 to 5
In one embodiment, the electron injection layer 5, the light emitting layer 7 and the hole injection layer 8 form a light emitting PN junction, the hole injection layer 8 of the light emitting PN junction is electrically connected with the anode 3 of the circuit substrate 1 through the first electrode 10, the electron injection layer 5 of the light emitting PN junction is electrically connected with the cathode 4 of the circuit substrate 1 through the second electrode 12, when a current in the circuit substrate 1 passes through the epitaxial wafer, the electron injection layer 5 generates electrons to be injected into the light emitting layer 7, the hole injection layer 8 generates holes to be injected into the light emitting layer 7, and the electrons and the holes are combined in the light emitting layer 7 to emit visible light. The electron injection layer 5 may be an N-type GaN, InGaN, or GaP layer, which is not specifically limited in the embodiments of the present disclosure. The hole injection layer 8 may be a P-type GaN, InGaN, or GaP layer, which is not specifically limited in the embodiments of the present disclosure. The light emitting layer 7 may include a superlattice quantum barrier layer and an InGaN quantum well layer formed by alternately stacking AlGaN and n-GaN, which is not specifically limited in this disclosure. The electrode layer 9 may be used to improve the lateral expansibility and uniformity of the current passing through the hole injection layer 8, and the material of the electrode layer 9 may be ITO or NiAu, which is not specifically limited in this embodiment of the disclosure. The epitaxial wafer 2 may further include a buffer layer, a reflective layer, and other structures, which refer to the prior art specifically, and the structure of the epitaxial wafer 2 is not limited in this disclosure.
In one embodiment, in order to prevent the first electrode 10 and the second electrode 12 or the anode 3 and the cathode 4 from being short-circuited due to electrode melting in the process of heat welding the circuit substrate 1 and the epitaxial wafer 2, the first electrode 10 and the second electrode 12 may be spaced apart by a predetermined distance, and the anode 3 and the cathode 4 may be spaced apart by a predetermined distance.
In one embodiment, the first electrode 10 is embedded in the anode 3, specifically, as shown in fig. 1, one end of the first electrode 10 close to the anode 3 has a first groove 13, and the anode 3 is partially embedded in the first groove 13 of the first electrode 10, wherein, in order to enable the anode 3 to be partially embedded in the first groove 13 of the first electrode 10, the portion of the anode 3 embedded in the first electrode 10 may be adapted to the shape of the first groove 13, as shown in fig. 3, the opening 131 of the first groove 13 may be greater than or equal to the bottom surface 132 of the first groove 13; alternatively, as shown in fig. 2, one end of the anode 3 close to the first electrode 10 is provided with a third groove 14, and the first electrode 10 is partially embedded in the third groove 14 of the anode 3, wherein, in order to enable the first electrode 10 to be partially embedded in the third groove 14 of the anode 3, the portion of the first electrode 10 embedded in the anode 3 and the shape of the third groove 14 can be adapted, and as shown in fig. 4, the opening 141 of the third groove 14 can be greater than or equal to the bottom 142 of the third groove 14.
In one embodiment, the second electrode 12 is embedded in the cathode 4, specifically, as shown in fig. 1, one end of the second electrode 12 close to the cathode 4 has a second groove 15, and the cathode 4 is partially embedded in the second groove 15 of the second electrode 12, wherein, in order to enable the cathode 4 to be partially embedded in the second groove 15 of the second electrode 12, the portion of the cathode 4 embedded in the second electrode 12 may be adapted to the shape of the second groove 15, as shown in fig. 3, the opening 151 of the second groove 15 may be greater than or equal to the bottom 152 of the second groove 15; alternatively, as shown in fig. 2, the end of the cathode 4 close to the second electrode 12 has a fourth groove 16, and the second electrode 12 is partially embedded in the fourth groove 16 of the cathode 4, wherein, in order to enable the second electrode 12 to be partially embedded in the fourth groove 16 of the cathode 4, the portion of the second electrode 12 embedded in the cathode 4 can be adapted to the shape of the fourth groove 16, and as shown in fig. 4, the opening 161 of the fourth groove 16 can be greater than or equal to the bottom surface 162 of the fourth groove 16.
Alternatively, in some embodiments, the first electrode 10 may be connected to the anode 3 in a nested manner, or the second electrode 12 may be connected to the cathode 4 in a nested manner; alternatively, in some embodiments, the first electrode 10 may be connected to the anode 3 in a nested manner, and the second electrode 12 may be connected to the cathode 4 in a nested manner. When the first electrode 10 is connected with the anode 3 in an embedded mode and the second electrode 12 is connected with the cathode 4 in an embedded mode, the electrode of the epitaxial wafer is welded firmly with the electrode of the circuit substrate, the epitaxial wafer is prevented from falling off due to the fact that the electrode is welded firmly when the substrate is uncovered, the transfer yield of the Micro-LED is improved, the current transmission efficiency is improved, and the display brightness of the Micro-LED display panel is improved.
Alternatively, in some embodiments, the first electrode 10 is embedded in the anode 3 and the second electrode 12 is embedded in the cathode 4, and the first electrode 10 is partially embedded in the third groove 14 of the anode 3 and the second electrode 12 is partially embedded in the fourth groove 16 of the cathode 4; alternatively, it may be that the anode 3 is partially embedded in the first groove 13 of the first electrode 10 and the cathode 4 is partially embedded in the second groove 15 of the second electrode 12; alternatively, it may be that the first electrode 10 is partially embedded in the third recess 14 of the anode 3 and the cathode 4 is partially embedded in the second recess 15 of the second electrode 12; alternatively, it may be that the second electrode 12 is partially embedded in the fourth recess 16 of the cathode 4 and the anode 3 is partially embedded in the first recess 13 of the first electrode 10.
The structure of the first electrode 10, the second electrode 12, the anode 3, and the cathode 4 is not particularly limited in the embodiments of the present disclosure. For example, in one embodiment, the first electrode 10 and/or the second electrode 12 may be a columnar structure or a truncated cone-shaped structure; in one embodiment, the anode 3 and/or the cathode 4 may be a columnar structure or a truncated cone-like structure. Illustratively, in one particular embodiment, and as shown with reference to fig. 1, the first electrode 10 and the second electrode 12 are columnar structures, and the anode 3 and the cathode 4 are truncated cone-shaped structures; in one embodiment, and as shown with reference to fig. 2, the first electrode 10 and the second electrode 12 are truncated cone-shaped structures, and the anode 3 and the cathode 4 are columnar structures; in one embodiment, and as shown with reference to fig. 5, the first electrode 10, the second electrode 12, the anode 3 and the cathode 4 are all columnar structures.
The materials of the first electrode 10, the second electrode 12, the anode 3, and the cathode 4 are not particularly limited in the embodiments of the present disclosure. For example, in one embodiment, the first electrode 10, the second electrode 12, the anode 3, or the cathode 4 may be one or more of indium tin oxide, indium, gold/tin alloy, or the like.
In one embodiment, as shown with reference to fig. 1 and 7, the electrode layer 9 has a first trench 17, the first electrode 10 being partially embedded in the first trench 17; and/or the second region 11 of the electron injection layer 5 has a second trench 18, the second electrode 12 being partially embedded in the second trench 18. In the embodiment of the present disclosure, the first electrode 10 and/or the second electrode 12 are partially embedded in the epitaxial wafer, which is beneficial to stabilize the first electrode 10 and/or the second electrode 12 and prevent the first electrode 10 and/or the second electrode 12 from falling off when the lateral shear force is applied. When the first electrode 10 and the second electrode 12 are both partially embedded in the epitaxial wafer, the stability of the epitaxial wafer electrode is more facilitated, and the epitaxial wafer electrode is prevented from falling off when being subjected to a transverse shear force
In one embodiment, referring to fig. 1 and 8, the surface of the circuit substrate 1 has a third groove 19 and/or a fourth groove 20, the anode 3 is partially embedded in the third groove 19, and/or the cathode 4 is partially embedded in the fourth groove 20. In the embodiment of the present disclosure, the anode 3 and/or the cathode 4 are partially embedded in the circuit substrate, which is beneficial to stabilize the anode 3 and/or the cathode 4 and prevent the anode 3 and/or the cathode 4 from falling off when the lateral shear force is applied. When the anode 3 and the cathode 4 are both partially embedded in the circuit substrate, the circuit substrate electrode is more stable, and the circuit substrate electrode is prevented from falling off when being subjected to transverse shearing force.
In the embodiment of the disclosure, the display panel may be a Micro-LED panel.
There is also provided in this example embodiment a display device comprising the display panel described in the above example.
The example embodiment also provides a preparation method of the display panel. Referring to fig. 6, the preparation method may include:
step S101: providing a circuit substrate, and preparing and forming an anode and a cathode on the same side of the circuit substrate;
step S102: providing an epitaxial wafer, wherein the epitaxial wafer comprises a substrate, the surface of the substrate is provided with an electron injection layer, and a light-emitting layer, a hole injection layer and an electrode layer are sequentially stacked in a first region on the surface of the electron injection layer; preparing a first electrode in at least partial area of the electrode layer, and preparing a second electrode in a second area on the surface of the electron injection layer;
step S103: connecting the first electrode and the anode in an embedded manner, and/or connecting the second electrode and the cathode in an embedded manner;
step S104: and stripping the substrate.
According to the preparation method of the display panel, the electrode of the epitaxial wafer is embedded with the electrode of the circuit substrate, so that the contact area between the electrode of the epitaxial wafer and the electrode of the circuit substrate can be increased, and further, on one hand, the electrode of the epitaxial wafer and the electrode of the circuit substrate can be firmly welded, the epitaxial wafer is prevented from falling off due to the infirm welding of the electrode when the substrate is removed, and the transfer yield of Micro-LEDs is improved; on the other hand, the current transmission efficiency can be improved, and the display brightness of the Micro-LED display panel can be improved.
Hereinafter, each step of the above-described method for manufacturing a display panel in the present exemplary embodiment will be described in more detail.
In step S101, in order to prevent short circuit between the anode and the cathode caused by electrode melting in the process of heating and welding the circuit substrate electrode and the epitaxial wafer electrode, a preset distance may be provided between the anode and the cathode when preparing the anode and the cathode. In step S102, in order to prevent the first electrode and the second electrode from short-circuiting due to melting of the electrodes in the process of heating and welding the electrodes of the circuit substrate and the electrodes of the epitaxial wafer, the first electrode and the second electrode may be spaced apart by a predetermined distance when the first electrode and the second electrode are prepared.
Referring to fig. 7, the epitaxial wafer provided in step S102 includes a substrate 21, the substrate 21 having an electron injection layer 5 on a surface thereof, the electron injection layer 5 having a first region 6 in which a light-emitting layer 7, a hole injection layer 8, and an electrode layer 9 are sequentially stacked. A first electrode is prepared on at least a partial region of the electrode layer 9, and a second electrode is prepared on at least a partial region of the second region 11 on the surface of the electron injection layer. When current in the circuit substrate passes through the epitaxial wafer, the electron injection layer generates electrons and injects the electrons into the light-emitting layer, the hole injection layer generates holes which are injected into the light-emitting layer, and the electrons and the holes are compounded in the light-emitting layer to emit visible light when injected into the light-emitting layer. The material of the substrate may be a sapphire or silicon substrate, which is not particularly limited in the embodiments of the present disclosure. The electron injection layer may be an N-type GaN, InGaN, or GaP layer, which is not specifically limited in this disclosure. The hole injection layer may be a P-type GaN, InGaN, or GaP layer, which is not specifically limited in this disclosure. The light emitting layer may include a superlattice quantum barrier layer and an InGaN quantum well layer formed by alternately stacking AlGaN and n-GaN, which is not particularly limited in the embodiments of the present disclosure. The electrode layer may be used to improve the lateral expansibility and uniformity of current passing through the hole injection layer, and the material of the electrode layer may be ITO or NiAu, which is not specifically limited in the embodiment of the present disclosure. The epitaxial wafer may further include a buffer layer, a reflective layer, and other structures, which refer to the prior art specifically, and the structure of the epitaxial wafer is not specifically limited in the embodiments of the present disclosure.
In step S103, the first electrode is connected to the anode in a nested manner, and/or the second electrode is connected to the cathode in a nested manner. Alternatively, in some embodiments, the first electrode may be connected to the anode in a nested manner. Alternatively, in some embodiments, the second electrode may be connected to the cathode in a nested manner. Alternatively, in some embodiments, the first electrode may be connected to the anode in a nested manner, and the second electrode may be connected to the cathode in a nested manner. When the first electrode and the anode are connected in an embedded mode and the second electrode and the cathode are connected in an embedded mode, the electrode of the epitaxial wafer and the electrode of the circuit substrate are welded firmly, the epitaxial wafer is prevented from falling off due to the fact that the electrode is welded insecure when the epitaxial wafer is taken off from the substrate, the transfer yield of the Micro-LED is improved, the current transmission efficiency is improved, and the display brightness of the Micro-LED display panel is improved.
Optionally, in some embodiments, the first electrode is embedded in the anode, and the anode may be embedded in the first groove of the first electrode, or the first electrode may be embedded in the third groove of the anode. Alternatively, in some embodiments, the second electrode is embedded in the cathode, and the cathode is partially embedded in the second groove of the second electrode, or the second electrode is embedded in the fourth groove of the cathode. Optionally, in some embodiments, the first electrode is connected with the anode in a nested manner, and the second electrode is connected with the cathode in a nested manner, wherein the anode is embedded in the first groove of the first electrode and the cathode is partially embedded in the second groove of the second electrode; or, embedding the first electrode in the third groove of the anode and the second electrode in the fourth groove of the cathode; or, embedding the anode in the first groove of the first electrode and the second electrode in the fourth groove of the cathode; alternatively, the first electrode is embedded in the third recess of the anode and the cathode portion is embedded in the second recess of the second electrode.
For example, in a specific embodiment, the step of preparing the first electrode at least in a partial region of the electrode layer may include:
step S1021: preparing and forming a first electrode with a first groove at the end part in at least partial region of the electrode layer;
the step of connecting the first electrode to the anode in a nested manner may include:
step S1031: the anode portion is inserted into the first groove of the first electrode and welded.
Specifically, in order to partially embed the anode into the first groove of the first electrode, the portion of the anode embedded into the first electrode prepared in step S101 may be adapted to the shape of the first groove prepared in step S1021, and the opening of the first groove may be greater than or equal to the bottom surface of the first groove.
For example, in a specific embodiment, the step of preparing the second electrode on the second region of the surface of the electron injection layer may include:
step S1022: preparing and forming a second electrode with a second groove at the end part in a second area on the surface of the electron injection layer;
the step of connecting the second electrode in a nested manner with the cathode may include:
step S1032: the cathode portion is inserted into the second recess of the second electrode and welded.
Specifically, in order to partially embed the cathode into the second groove of the second electrode, the portion of the cathode embedded in the second electrode prepared in step S101 may be adapted to the shape of the second groove prepared in step S1022, and the opening of the second groove may be greater than or equal to the bottom surface of the second groove.
For example, in one embodiment, the step of forming the anode and the cathode on the same side of the circuit substrate may include:
step S1011: preparing an anode and a cathode which are provided with third grooves at the end parts on the same side of the circuit substrate;
the step of connecting the first electrode to the anode in an embedded manner includes:
step S1031': the first electrode portion is inserted into the third groove of the anode and welded.
Specifically, in order to embed the first electrode in the third groove of the partial anode, the portion of the first electrode formed in step S102 embedded in the anode may be adapted to the shape of the third groove formed in step S1011, and the opening of the third groove may be greater than or equal to the bottom surface of the third groove.
For example, in one embodiment, the step of forming the anode and the cathode on the same side of the circuit substrate may include:
step S1012: preparing and forming an anode and a cathode with a fourth groove at the end part on the same side of the circuit substrate;
the step of connecting the second electrode in a nested manner with the cathode comprises:
step S1032': the second electrode portion is inserted into the fourth groove of the cathode and welded.
Specifically, in order to partially embed the second electrode in the fourth groove of the cathode, the portion of the second electrode embedded in the cathode prepared in step S102 may be adapted to the shape of the fourth groove prepared in step S1011, and the opening of the fourth groove may be greater than or equal to the bottom surface of the fourth groove.
For example, in one embodiment, the step of forming the anode and the cathode on the same side of the circuit substrate may include:
step S1013: preparing an anode with a third groove at the end part and a cathode with a fourth groove at the end part on the same side of the circuit substrate;
the step of connecting the first electrode to the anode in an embedded manner includes:
step S1031 ″: embedding the first electrode part into the third groove of the anode and welding;
the step of connecting the second electrode in a nested manner with the cathode comprises:
step S1032 ": the second electrode portion is inserted into the fourth groove of the cathode and welded.
Specifically, the welding manner may refer to the prior art, for example, the circuit substrate with the prepared anode and cathode and the epitaxial wafer with the prepared first electrode and second electrode may be placed in a chamber with a temperature gradient for heating welding, which is not limited in this disclosure.
The structure of the first electrode, the second electrode, the anode and the cathode is not particularly limited in the embodiments of the present disclosure. For example, in one embodiment, the first electrode and/or the second electrode may be prepared in a pillar-like structure or a truncated cone-like structure; in one embodiment, the anode and/or the cathode may be prepared in a columnar structure or a truncated cone-shaped structure. Specifically, the material for preparing the first electrode, the second electrode, the anode or the cathode may be a metal material such as indium tin oxide, indium, gold/tin alloy, and the like, which is not particularly limited in this disclosure.
It should be understood that, in the embodiments of the present disclosure, the preparation order of the anode, the cathode, the first electrode and the second electrode is not sequential, and may be interchanged with each other.
In another embodiment, the step of preparing the first electrode in at least a partial region of the electrode layer and preparing the second electrode in a second region of the surface of the electron injection layer may include:
step S201: and etching at least part of the electrode layer to form a first groove, and preparing and forming a first electrode in the first groove so that the first electrode is partially embedded in the first groove.
In one embodiment, the step of preparing the first electrode on at least a partial region of the electrode layer and preparing the second electrode on a second region of the surface of the electron injection layer may include:
step S201': and etching a second area on the surface of the electron injection layer to form a second groove, and preparing and forming a second electrode in the second groove so that the second electrode is partially embedded in the second groove.
In one embodiment, the step of preparing the first electrode on at least a partial region of the electrode layer and preparing the second electrode on a second region of the surface of the electron injection layer may include:
step S201 ": etching at least part of the electrode layer to form a first groove, and preparing and forming a first electrode in the first groove so that the first electrode is partially embedded into the first groove;
Step S202': and etching a second area on the surface of the electron injection layer to form a second groove, and preparing and forming a second electrode in the second groove so that the second electrode is partially embedded in the second groove.
The shape of the first trench and the second trench is not particularly limited in the embodiments of the present disclosure, for example, in one embodiment, the shape of the first trench 17 and the second trench 18 formed by preparation may be as shown with reference to fig. 7.
In the embodiment of the disclosure, the first electrode and/or the second electrode are partially embedded in the epitaxial wafer, which is beneficial to stabilize the first electrode and/or the second electrode and prevent the first electrode and/or the second electrode from falling off when the first electrode and/or the second electrode is subjected to a lateral shear force. When the first electrode and the second electrode are both partially embedded into the epitaxial wafer, the stability of the epitaxial wafer electrode is better facilitated, and the epitaxial wafer electrode is prevented from falling off when being subjected to transverse shearing force.
Optionally, in some embodiments, the order of step S201 "and step S202" may be interchanged. Optionally, in some embodiments, the first trench and the second trench may be etched first, and then the first electrode and the second electrode may be prepared.
In another embodiment, the step of forming the anode and the cathode on the same side of the circuit substrate may include:
Step S301: etching to form a third groove on the surface of the circuit substrate;
step S302: and preparing and forming an anode in the third groove so that the anode is partially embedded in the third groove.
In one embodiment, the step of forming the anode and the cathode on the same side of the circuit substrate may include:
step S301': etching and forming a fourth groove on the surface of the circuit substrate;
step S302': and preparing and forming a cathode in the fourth groove so that the cathode is partially embedded in the fourth groove.
In one embodiment, the step of forming the anode and the cathode on the same side of the circuit substrate may include:
step S301': etching the surface of the same side of the circuit substrate to form a third groove and a fourth groove;
step S302': preparing and forming an anode in the third groove so that the anode is partially embedded into the third groove;
step S303 ″: and preparing and forming a cathode in the fourth groove so that the cathode is partially embedded in the fourth groove.
The shape of the third trench and the fourth trench is not particularly limited in the embodiments of the present disclosure, for example, in one embodiment, the shape of the third trench 19 and the fourth trench 20 formed by preparation may be as shown with reference to fig. 8.
In the embodiment of the disclosure, the anode and/or the cathode are partially embedded in the circuit substrate, which is beneficial to stabilize the anode and/or the cathode and prevent the anode and/or the cathode from falling off when the anode and/or the cathode are subjected to a transverse shearing force. When the anode and the cathode are partially embedded into the circuit substrate, the circuit substrate electrode is more favorably stabilized, and the circuit substrate electrode is prevented from falling off when being subjected to transverse shearing force.
Optionally, in some embodiments, the order of step S302 "and step S303" may be interchanged. Optionally, in some embodiments, the third trench may be etched first to prepare the third electrode, and then the fourth trench may be etched to prepare the fourth electrode.
It is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like in the foregoing description are used for indicating or indicating the orientation or positional relationship illustrated in the drawings, merely for the convenience of describing the disclosed embodiments and for simplifying the description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and therefore should not be considered limiting of the disclosed embodiments.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the embodiments of the present disclosure, "a plurality" means two or more unless specifically limited otherwise.
In the embodiments of the present disclosure, unless otherwise specifically stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present disclosure can be understood by those of ordinary skill in the art as appropriate.
In the embodiments of the present disclosure, unless otherwise expressly specified or limited, the first feature "on" or "under" the second feature may comprise the first and second features being in direct contact, or may comprise the first and second features being in contact, not directly, but via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
Claims (16)
1. A method for manufacturing a display panel, the method comprising:
providing a circuit substrate, and preparing and forming an anode and a cathode on the same side of the circuit substrate;
providing an epitaxial wafer, wherein the epitaxial wafer comprises a substrate, the surface of the substrate is provided with an electron injection layer, and a light-emitting layer, a hole injection layer and an electrode layer are sequentially stacked in a first region on the surface of the electron injection layer;
preparing a first electrode in at least partial region of the electrode layer, and preparing a second electrode in a second region on the surface of the electron injection layer;
the first electrode is connected with the anode in a embedding way, and/or the second electrode is connected with the cathode in a embedding way;
and stripping the substrate.
2. The production method according to claim 1, wherein the step of producing the first electrode in at least a partial region of the electrode layer comprises:
preparing and forming a first electrode with a first groove at the end part in at least partial region of the electrode layer;
the step of connecting the first electrode to the anode in a nested manner includes:
the anode portion is inserted into the first groove of the first electrode and welded.
3. The method according to claim 1, wherein the step of forming a second electrode on a second region of the surface of the electron injection layer comprises:
Preparing and forming a second electrode with a second groove at the end part in a second area on the surface of the electron injection layer;
the step of connecting the second electrode to the cathode in an embedded manner, comprising:
the cathode portion is inserted into the second groove of the second electrode and welded.
4. The method of claim 1, wherein the step of forming an anode and a cathode on the same side of the circuit substrate comprises:
preparing an anode with a third groove at the end part and/or a cathode with a fourth groove at the end part on the same side of the circuit substrate;
the step of connecting the first electrode to the anode in a nested manner includes:
embedding the first electrode part into a third groove of the anode and welding;
and/or, the step of connecting the second electrode in embedded relation with the cathode comprises:
the second electrode portion is inserted into the fourth groove of the cathode and welded.
5. The production method according to claim 1, wherein the first electrode and/or the second electrode is produced in a columnar structure or a truncated cone-shaped structure.
6. The production method according to claim 1, wherein the anode and/or the cathode are produced in a columnar structure or a truncated cone structure.
7. The method according to any one of claims 1 to 6, wherein the step of preparing a first electrode on at least a partial region of the electrode layer and a second electrode on a second region of the surface of the electron injection layer comprises:
etching at least part of the electrode layer to form a first groove, and preparing and forming the first electrode in the first groove so that the first electrode is partially embedded into the first groove; and/or the presence of a gas in the gas,
and etching a second region on the surface of the electron injection layer to form a second groove, and preparing and forming the second electrode in the second groove so as to embed part of the second electrode into the second groove.
8. The method according to any one of claims 1 to 6, wherein the step of forming the anode and the cathode on the same side of the circuit substrate comprises:
etching the surface of the same side of the circuit substrate to form a third groove and/or a fourth groove;
preparing and forming the anode in the third groove so that the anode is partially embedded in the third groove; and/or the presence of a gas in the gas,
preparing and forming the cathode in the fourth groove so that the cathode is partially embedded in the fourth groove.
9. A display panel, comprising:
the circuit board is provided with an anode and a cathode on the same side;
the epitaxial wafer comprises an electron injection layer, wherein a light-emitting layer, a hole injection layer and an electrode layer are sequentially stacked in a first region on the surface of the electron injection layer; the electrode layer is connected with the first electrode, and a second area on the surface of the electron injection layer is connected with the second electrode;
the first electrode is connected with the anode in an embedded mode, and/or the second electrode is connected with the cathode in an embedded mode.
10. The display panel according to claim 9, wherein an end of the first electrode near the anode has a first groove, and the anode is partially embedded in the first groove of the first electrode; or
The end of the anode close to the first electrode is provided with a third groove, and the first electrode is partially embedded into the third groove of the anode.
11. The display panel according to claim 9, wherein an end of the second electrode near the cathode has a second groove, and the cathode is partially embedded in the second groove of the second electrode; alternatively, the first and second electrodes may be,
one end of the cathode close to the second electrode is provided with a fourth groove, and the second electrode is partially embedded into the fourth groove of the cathode.
12. The display panel according to claim 9, wherein the first electrode and/or the second electrode is a columnar structure or a truncated cone structure.
13. The display panel according to claim 12, wherein the electrode layer has a first groove in which the first electrode is partially embedded; and/or the second region of the electron injection layer has a second trench in which the second electrode is partially embedded.
14. The display panel according to claim 9, wherein the anode and/or the cathode is a columnar structure or a truncated cone structure.
15. The display panel according to claim 14, wherein the circuit substrate surface has a third groove and/or a fourth groove, and wherein the anode portion is embedded in the third groove and/or the cathode portion is embedded in the fourth groove.
16. A display device comprising the display panel according to any one of claims 9 to 15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910350474.1A CN111864038A (en) | 2019-04-28 | 2019-04-28 | Display panel, display device and preparation method of display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910350474.1A CN111864038A (en) | 2019-04-28 | 2019-04-28 | Display panel, display device and preparation method of display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111864038A true CN111864038A (en) | 2020-10-30 |
Family
ID=72965208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910350474.1A Pending CN111864038A (en) | 2019-04-28 | 2019-04-28 | Display panel, display device and preparation method of display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111864038A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113140661A (en) * | 2021-04-30 | 2021-07-20 | 上海天马微电子有限公司 | Display panel and display device |
| CN113421892A (en) * | 2021-06-17 | 2021-09-21 | 上海天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
| CN115249725A (en) * | 2022-08-29 | 2022-10-28 | 厦门大学 | Display panel and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09162230A (en) * | 1995-12-06 | 1997-06-20 | Taiyo Yuden Co Ltd | Electronic circuit device and its manufacturing method |
| JP2001217278A (en) * | 2000-01-31 | 2001-08-10 | Matsushita Electric Works Ltd | Method for mounting semiconductor chip |
| JP2005353854A (en) * | 2004-06-11 | 2005-12-22 | Matsushita Electric Ind Co Ltd | Wiring board and semiconductor device using the same |
| JP2006210591A (en) * | 2005-01-27 | 2006-08-10 | Matsushita Electric Ind Co Ltd | Semiconductor apparatus and its manufacturing method |
| CN104576885A (en) * | 2014-12-18 | 2015-04-29 | 上海大学 | Flip LED package member |
| CN206312926U (en) * | 2016-12-28 | 2017-07-07 | 浙江长兴金盛光电科技有限公司 | A kind of novel high-power flip LED light source |
| CN107919414A (en) * | 2017-12-04 | 2018-04-17 | 歌尔股份有限公司 | Method, manufacture method, device and the electronic equipment of micro- light emitting diode transfer |
| WO2019079046A1 (en) * | 2017-10-20 | 2019-04-25 | Facebook Technologies, Llc | Elastomeric layer fabrication for light emitting diodes |
-
2019
- 2019-04-28 CN CN201910350474.1A patent/CN111864038A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09162230A (en) * | 1995-12-06 | 1997-06-20 | Taiyo Yuden Co Ltd | Electronic circuit device and its manufacturing method |
| JP2001217278A (en) * | 2000-01-31 | 2001-08-10 | Matsushita Electric Works Ltd | Method for mounting semiconductor chip |
| JP2005353854A (en) * | 2004-06-11 | 2005-12-22 | Matsushita Electric Ind Co Ltd | Wiring board and semiconductor device using the same |
| JP2006210591A (en) * | 2005-01-27 | 2006-08-10 | Matsushita Electric Ind Co Ltd | Semiconductor apparatus and its manufacturing method |
| CN104576885A (en) * | 2014-12-18 | 2015-04-29 | 上海大学 | Flip LED package member |
| CN206312926U (en) * | 2016-12-28 | 2017-07-07 | 浙江长兴金盛光电科技有限公司 | A kind of novel high-power flip LED light source |
| WO2019079046A1 (en) * | 2017-10-20 | 2019-04-25 | Facebook Technologies, Llc | Elastomeric layer fabrication for light emitting diodes |
| CN107919414A (en) * | 2017-12-04 | 2018-04-17 | 歌尔股份有限公司 | Method, manufacture method, device and the electronic equipment of micro- light emitting diode transfer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113140661A (en) * | 2021-04-30 | 2021-07-20 | 上海天马微电子有限公司 | Display panel and display device |
| CN113421892A (en) * | 2021-06-17 | 2021-09-21 | 上海天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
| CN113421892B (en) * | 2021-06-17 | 2023-11-24 | 上海天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
| CN115249725A (en) * | 2022-08-29 | 2022-10-28 | 厦门大学 | Display panel and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7842958B1 (en) | Light-emitting diode, light-emitting device, lighting apparatus, display, and signal light | |
| CN111864038A (en) | Display panel, display device and preparation method of display panel | |
| US9190451B2 (en) | Light emitting diode array and method for manufacturing the same | |
| KR102169274B1 (en) | Display | |
| US20130015465A1 (en) | Nitride semiconductor light-emitting device | |
| EP3652792B1 (en) | Light emitting diode and manufacturing method thereof | |
| US8704252B2 (en) | Light emitting device | |
| US9040328B2 (en) | Manufacturing method for an LED | |
| JP5814968B2 (en) | Nitride semiconductor light emitting device | |
| JP2004311677A (en) | Semiconductor light emitting device | |
| CN102820315B (en) | A kind of directly micro-array of display device of light emitting-type and preparation method thereof | |
| CN215955302U (en) | Micro-LED device based on photoelectric isolation | |
| CN108574032A (en) | Light-emitting component and display equipment | |
| US8823020B2 (en) | Light emitting diode | |
| CN107808601A (en) | A kind of micro-led display device structure and preparation method | |
| US8253160B2 (en) | Light-emitting diode chip structure and fabrication method thereof | |
| CN105449060A (en) | Semiconductor light emitting diode chip | |
| KR101661621B1 (en) | Substrate formed pattern and light emitting device | |
| US9040325B2 (en) | Method for manufacturing light emitting diode package having a voltage stabilizing module consisting of two doping layers | |
| CN108417675B (en) | High-voltage light-emitting diode with horizontal bridging structure and manufacturing method thereof | |
| CN217387196U (en) | Miniature light-emitting diode and common cathode display | |
| US20240170609A1 (en) | Vertical-type light-emitting diode and light-emitting device | |
| CN101299448B (en) | Luminescence transistor with vertical gate structure and preparation method thereof | |
| CN108831969B (en) | Semiconductor nanowire electric injection light-emitting device using air as insulating medium | |
| TWI528583B (en) | Led and method for manufacting the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201030 |