CN111854638A - Cross-scale micro-nano structure three-dimensional measurement device and measurement method - Google Patents
Cross-scale micro-nano structure three-dimensional measurement device and measurement method Download PDFInfo
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- CN111854638A CN111854638A CN202010718315.5A CN202010718315A CN111854638A CN 111854638 A CN111854638 A CN 111854638A CN 202010718315 A CN202010718315 A CN 202010718315A CN 111854638 A CN111854638 A CN 111854638A
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- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
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- G—PHYSICS
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- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02055—Reduction or prevention of errors; Testing; Calibration
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/0209—Low-coherence interferometers
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Abstract
The invention discloses a cross-scale micro-nano structure three-dimensional measuring device and a measuring method, which are characterized by comprising the following steps: the device comprises an atomic force probe scanning microscope component, an objective lens rotary table, a white light interference system, a nano-scale vertical micro-displacement platform, a laser interference displacement metering system, a measurement and control system, a laser interference displacement metering system II, a sample piece, a two-dimensional piezoelectric ceramic scanning platform, a two-dimensional electric scanning platform and a laser interference displacement metering system III; the measurement device is switched between a white light interferometry mode and an atomic force probe scanning measurement mode by rotating the objective turntable. The white light interference measurement mode is mainly used for large-scale measurement of a micron-scale structure, the atomic force probe scanning measurement mode is used for horizontal high-resolution measurement of a nanoscale characteristic region, large-scale and high-resolution measurement of the surface of a trans-scale micro-nano structure is achieved, and measurement of the trans-scale (micron-scale, submicron and below-scale) structure can be achieved in a set of system.
Description
Technical Field
The invention belongs to the field of ultra-precise surface topography measurement, and particularly relates to a cross-scale micro-nano structure three-dimensional measurement device and a measurement method.
Background
With the development of advanced manufacturing technologies such as photoetching, ultra-precision machining, optical machining and the like, the surface of the trans-scale micro-nano structure becomes an important surface feature of key components in the fields of solar cells, laser holographic anti-counterfeiting, planar display and the like. The overall macroscopic size of the features is gradually increased, and the local microscopic features are more refined, so that the measurement requirement of considering both large range and high resolution is generated. Although conventional surface topography measuring instruments such as a stylus profilometer, an optical profilometer, an atomic force microscope and the like are widely applied to ultra-precise surface measurement, the stylus profilometer and the optical profilometer cannot measure micro-nano structural features with submicron scale or below in the horizontal direction due to the limitation of the radius of a needle point and the Rayleigh diffraction limit. Although the atomic force microscope has nanometer resolution in horizontal and vertical directions, local micro-nano structure feature positioning and large-range measurement are difficult to realize due to small measurement range and low measurement speed.
Aiming at the measurement requirements of the cross-scale micro-nano structure characteristics on large range and high resolution, on one hand, the measurement requirements of the large range and the high resolution in the vertical direction can be met to a certain extent by splicing and measuring the traditional commercial instruments such as a three-dimensional laser scanning confocal microscope of Japanese Keynes by using microscope objectives with different multiplying powers, but the measurement precision in the horizontal direction is limited; although electron microscopes such as FEI, ZEISS, HITACHI, and the like can adjust the magnification in the horizontal direction, they cannot measure three-dimensional features. On the other hand, a white light interference profilometer, a confocal laser scanning microscope and the like can be used for positioning the target micro-nano structure characteristics in the cross-scale micro-nano structure characteristics and measuring the micron-scale structure in the cross-scale micro-nano structure characteristics in a large range, but the difficulty lies in how to quickly position and measure the characteristics below the submicron scale in the target micro-nano structure characteristics on another high-resolution instrument and how to realize the fusion of measurement data between different instruments so as to ensure the measurement accuracy.
Disclosure of Invention
Aiming at least one of the defects or improvement requirements in the prior art, the invention provides a cross-scale micro-nano structure three-dimensional measuring device, which can realize large-scale and high-resolution measurement of the surface of the cross-scale micro-nano structure, can realize measurement of cross-scale (micron scale, submicron and below scale) structures in a set of system, and avoids the problems of positioning reference errors caused by the fact that different measuring instruments are adopted for measuring the micron scale structures and the submicron and below scale structures, the problem that a measured area is difficult to find when a high-resolution instrument measures the submicron and below scale structures, and the problems of data fusion and time consumption caused by the fact that a plurality of instruments cooperatively measure.
In order to achieve the above object, according to an aspect of the present invention, there is provided a cross-scale micro-nano structure three-dimensional measurement apparatus, which is characterized in that: the measuring device comprises an atomic force probe scanning microscope component, an objective lens rotary table, a white light interference system, a nano-scale vertical micro-displacement platform, a laser interference displacement metering system, a measurement and control system, a laser interference displacement metering system II, a sample piece, a two-dimensional piezoelectric ceramic scanning platform, a two-dimensional electric scanning platform and a laser interference displacement metering system III;
the objective lens rotary table enables the measuring device to be switched between a white light interference measuring mode and an atomic force probe scanning measuring mode through rotation; the white light interference system converges light reflected back through the sample piece and reference light passing through the microscope objective lens I on a beam splitter of the microscope objective lens I to generate white light interference fringes under a white light interference measurement mode, converges light reflected back through the cantilever surface of the atomic force probe and reference light of the microscope objective lens II of the atomic force probe scanning microscope assembly on the beam splitter of the microscope objective lens II of the atomic force probe scanning microscope assembly to generate white light interference fringes under an atomic force probe scanning measurement mode, and a CCD (charge coupled device) camera of the white light interference system is used for acquiring white light interference fringe images of the white light interference measurement mode and the atomic force probe scanning measurement mode;
the first microscope objective and the second microscope objective of the atomic force probe scanning microscope component are symmetrically arranged on the objective turntable, and the central lines of the first microscope objective and the second microscope objective are superposed with the measuring optical axis of the white light interference system after being rotated to the measuring position through the objective turntable;
the nanometer-scale vertical micro-displacement platform is used for probe calibration, probe approaching sample piece and pre-pressure adjustment of a vertical scanning mode of a white light interference measurement mode and an atomic force probe scanning measurement mode;
the laser interference displacement metering system is used for measuring the vertical scanning displacement of the microscope objective I in a white light interference measurement mode and the vertical offset of the atomic force probe in an atomic force probe scanning measurement mode; the pyramid prism of the laser interference displacement metering system is arranged at the upper end of the white light interference system;
the measurement and control system controls and drives the nanoscale vertical micro-displacement platform, the two-dimensional piezoelectric ceramic scanning platform and the two-dimensional electric scanning platform, receives the white light interference image of the surface of the cantilever of the atomic force probe and the laser interference signals of the laser interference displacement measurement system I, the laser interference displacement measurement system II and the laser interference displacement measurement system III, and processes and obtains the measurement result of the sample in the white light interference and atomic force probe scanning measurement mode.
Preferably, the white light interference system, the pyramid prism of the laser interference displacement measurement system, the CCD camera, the objective turntable, the atomic force probe scanning microscope assembly and the first microscope objective are all fixed on the nano-scale vertical micro-displacement platform.
Preferably, the displacement measuring direction of the laser interference displacement measuring system is completely coincident with the measuring optical axis of the white light interference system.
Preferably, the central line of the corner cube prism is completely coincident with the measurement optical axis of the white light interference system.
Preferably, the sample piece is arranged on the two-dimensional piezoelectric ceramic scanning platform, and the two-dimensional piezoelectric ceramic scanning platform is fixed on the two-dimensional electric scanning platform.
Preferably, the center positions of the sample piece, the two-dimensional piezoelectric ceramic scanning platform and the two-dimensional electric scanning platform are overlapped in the vertical direction and are overlapped with the central axis of the measuring light of the white light interference system.
Preferably, the measurement and control system controls and drives the two-dimensional electric scanning platform to drag the sample piece to perform white light interference multi-range splicing measurement;
the measurement and control system also controls and drives the two-dimensional piezoelectric ceramic scanning platform and the two-dimensional electric scanning platform, positions a target micro-nano structure characteristic region on the sample piece, and controls and drives the two-dimensional piezoelectric ceramic scanning platform to drag the sample piece to carry out atomic force probe scanning measurement.
Preferably, the second laser interference displacement metering system and the third laser interference displacement metering system are used for displacement metering of dragging and scanning of the sample piece in a horizontal plane.
Preferably, the first reflector of the second laser interference displacement metering system and the second reflector of the third laser interference displacement metering system are fixed in two directions of the two-dimensional piezoelectric ceramic scanning platform, so that two paths of metering light rays are orthogonally arranged in the same horizontal plane and intersect with the extension line of the first metering direction of the laser interference displacement metering system in the vertical direction at one point, and the intersection point is the central axis of the measuring light ray of the white light interference system and the intersection point of the sample piece or the needle point of the atomic force probe in the scanning measuring mode of the atomic force probe when the white light interference measuring mode is adopted.
In order to achieve the above object, according to another aspect of the present invention, there is provided a method for measuring a cross-scale micro-nano structure three-dimensional measurement apparatus, including:
the method comprises the following steps: rotating the objective lens turntable to enable the first microscope objective lens to be positioned at the lower end of the white light interference system, enabling the measuring device to work in a white light interference measuring mode, and placing the sample piece at the central position of the two-dimensional piezoelectric ceramic scanning platform to enable the center of the sample piece to be positioned right below the first microscope objective lens;
step two: after the nanoscale vertical micro-displacement platform is controlled and driven to generate appropriate white light interference fringes on the surface of the sample, the nanoscale vertical micro-displacement platform is controlled and driven to move upwards to lift the white light interference system until the white light interference fringes completely disappear;
step three: the nanometer-scale vertical micro-displacement platform is driven by fine adjustment to drive the white light interference system to downwards carry out vertical scanning measurement until white light interference zero-order fringes scan the whole measured area of the sample piece, the pyramid prism is driven to downwards move at the same time, the downwards moving displacement of the microscope objective lens is measured through the laser interference displacement measurement system, and a corresponding white light interference image of the measured area is obtained through the CCD camera;
step four: controlling and driving the two-dimensional electric scanning platform to enable the adjacent area of the measured area of the sample in the step three to move to the position right below the microscope objective lens I, repeating the step two and measuring the area, and repeating the step four until the measuring area required by the sample is measured;
step five: splicing the measurement results of all the white light interference measurement modes in the third step and the fourth step through a white light interference splicing algorithm to obtain the measurement result of the measurement area required by the sample;
step six: analyzing the measurement result of the sample, searching and positioning a target micro-nano structure characteristic region, and controlling and driving the two-dimensional electric scanning platform and the two-dimensional piezoelectric ceramic scanning platform to enable the target micro-nano structure characteristic region to be positioned under the first microscope objective;
step seven: rotating the objective lens turntable to enable the atomic force probe scanning microscope component to be located at the lower end of the white light interference system, wherein the measuring device works in an atomic force probe scanning measuring mode;
step eight: generating white light interference fringes on a cantilever of the atomic force probe, controlling and driving the nanometer-scale vertical micro-displacement platform to drive the white light interference system to move downwards, enabling a needle point of the atomic force probe to be in contact with the surface of the sample piece and generate extrusion, controlling and driving the two-dimensional piezoelectric ceramic scanning platform to drag the sample piece to carry out measurement, acquiring a white light interference image on the atomic force probe cantilever through the CCD camera, controlling and driving the nanoscale vertical micro-displacement platform to vertically move so as to keep the white light interference fringes on the atomic force probe cantilever within a preset range, and measuring and storing the displacement by the laser interference displacement metering system, after completing the scanning measurement, controlling and driving the nanoscale vertical micro-displacement platform to separate the needle tip of the atomic force probe from the surface of the sample piece, and obtaining a measurement result by using an atomic force probe scanning reconstruction algorithm;
step nine: and controlling and driving the two-dimensional electric scanning platform and the two-dimensional piezoelectric ceramic scanning platform to enable the next target micro-nano structure characteristic region to be located under the second microscope objective, repeating the step eight to measure the next target micro-nano structure characteristic region until the measurement of all target micro-nano structure characteristic regions is completed, and completing the measurement.
The above-described preferred features may be combined with each other as long as they do not conflict with each other.
Generally, compared with the prior art, the above technical solution conceived by the present invention has the following beneficial effects:
1. the white light interference profilometer and the atomic force microscope are organically combined, and the common light path structure is matched with the objective lens rotary table to be rapidly switched in a white light interference and atomic force probe scanning measurement mode, so that the measurement of the large range and the high resolution of the surface of the trans-scale micro-nano structure is realized.
2. In the horizontal range, the two nanoscale laser interference displacement metering systems are used for orthogonal metering, so that the accuracy of large-range splicing measurement of white light interference and the accuracy of target structure characteristic positioning can be ensured.
3. The vertical displacement of the white light interference system is measured through the nano-scale laser interference displacement measurement system in the vertical direction, so that the accuracy of white light interference vertical scanning measurement and atomic force probe scanning measurement can be ensured.
4. The measuring light rays of the three nanoscale laser interference displacement measuring systems in the horizontal direction and the vertical direction are orthogonal in pairs in space and intersect at a measuring point, so that the influence of Abbe errors is eliminated, the measuring ranges of a white light interference measuring mode and an atomic force probe scanning measuring mode can be greatly expanded, the positioning precision of target structure characteristics is improved, and the accuracy of measuring results is ensured.
In a word, aiming at the measurement requirements of large range and high resolution of the surface of the trans-scale micro-nano structure, the invention provides a novel measurement device and a measurement method, which organically combine white light interferometry and atomic force probe microscopy, and provide three laser interference displacement measurement systems for orthogonal measurement in a three-dimensional range, thereby eliminating Abbe errors, ensuring the accuracy of white light interference large-range splicing measurement and target micro-nano structure characteristic positioning and atomic force probe scanning measurement, and realizing large-range and high resolution measurement of the surface of the trans-scale micro-nano structure. The method can realize measurement of a cross-scale (micron scale, submicron and below scale) structure in a set of system, and avoids the problem of positioning reference error caused by the fact that the micron scale structure and the submicron and below scale structure need to be measured by different measuring instruments, the problem that a measured area is difficult to find when a high-resolution instrument measures the submicron and below scale structure, and the problems of data fusion and long consumed time caused by the fact that a plurality of instruments cooperatively measure.
Drawings
Fig. 1 is a schematic overall structure diagram of a cross-scale micro-nano structure three-dimensional measuring device according to an embodiment of the invention;
FIG. 2 is a schematic diagram of the overall structure of a scanning measurement mode of a surface atomic force probe of a trans-scale micro-nano structure realized by the invention;
fig. 3 is a schematic structural diagram of a three-dimensional metering system of a trans-scale micro-nano structure surface measuring device implemented by the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other. The present invention will be described in further detail with reference to specific embodiments.
As shown in fig. 1, the present invention provides a cross-scale micro-nano structure three-dimensional measurement apparatus, which comprises, in a large-scale white light interferometry mode: the device comprises a white light interference system 5, a nanoscale vertical micro-displacement platform 7, a laser interference displacement metering system 8, a measurement and control system 9, an objective lens rotary table 4, an atomic force probe scanning microscope component 3, a sample piece 14, a two-dimensional piezoelectric ceramic scanning platform 16 and a two-dimensional electric scanning platform 17. And rotating the objective turntable 4 to enable the white light interference system 5 to be communicated with the optical path of the first microscope objective 11, driving the nanoscale vertical micro-displacement platform 7 to generate appropriate white light interference fringes on the surface of the sample 14, and driving the nanoscale vertical micro-displacement platform 7 to move upwards to lift the white light interference system 5 until the white light interference fringes completely disappear. The nano-scale vertical micro-displacement platform 7 is driven by a micro step pitch to drive the white light interference system 5 to downwards carry out vertical scanning measurement until white light interference zero-order fringes scan the whole measured area of the sample piece 14, meanwhile, the pyramid prism 6 is driven to downwards move, the displacement of the microscope objective lens I11 downwards moving is measured through the laser interference displacement measurement system 8, a white light interference image of the corresponding measured area is obtained through the CCD camera 10, and a white light interference reconstruction algorithm is used for obtaining the measurement result of the measured area.
Fig. 2 is a schematic view of the measurement apparatus of fig. 1 operating in an atomic force probe scanning measurement mode by rotating the objective turret 4 according to the invention. Generating proper white light interference fringes on a cantilever of the atomic force probe 1, controlling and driving the nano-scale vertical micro-displacement platform 7 to drive the white light interference system 5 to move downwards, enabling the needle tip of the atomic force probe 1 to be in contact with the surface of the sample piece 14 and generate micro extrusion, controlling and driving the two-dimensional piezoelectric ceramic scanning platform 16 to drag the sample piece 14 for measurement, the white light interference image on the cantilever of the atomic force probe 1 is obtained by the CCD camera 10, the white light interference fringe on the cantilever of the atomic force probe 1 is kept in a certain range by controlling and driving the nanometer vertical micro-displacement platform 7 to vertically move, and the displacement is measured and stored by a laser interference displacement measurement system 8, after the scanning measurement is finished, and controlling and driving the nanoscale vertical micro-displacement platform 7 to separate the needle tip of the atomic force probe 1 from the surface of the sample piece 14, and acquiring a measurement result by using an atomic force probe scanning reconstruction algorithm.
FIG. 3 is a schematic diagram of a three-dimensional metrology system of the apparatus of the present invention. The second laser interference displacement measurement system 13 and the first reflector 12 and the second reflector 15 of the third laser interference displacement measurement system 18 are fixed in two directions of a two-dimensional piezoelectric ceramic scanning platform 16, so that two paths of measurement light rays are orthogonally arranged in the same horizontal plane and intersect with an extension line of the 8 measurement directions of the vertical laser interference displacement measurement system at a point, and the intersection point is the intersection point of the central axis of the measurement light ray of the white light interference system 5 and the sample piece 14 in a white light interference measurement mode or the needle point of the atomic force probe 1 in an atomic force probe scanning measurement mode.
Specifically, the objective lens rotary table 4 switches the measuring device in a white light interference measuring mode and an atomic force probe scanning measuring mode through rotation; the white light interference system 5 converges light reflected back through the sample piece 14 and reference light passing through the microscope objective lens 11 on a beam splitter of the microscope objective lens 11 to generate white light interference fringes in a white light interference measurement mode, converges light reflected back through the cantilever surface of the atomic force probe 1 and reference light of the microscope objective lens 2 of the atomic force probe scanning microscope component 3 on the beam splitter of the microscope objective lens 2 of the atomic force probe scanning microscope component 3 to generate white light interference fringes in an atomic force probe scanning measurement mode, and the CCD camera 10 of the white light interference system 5 is used for acquiring white light interference fringe images in the white light interference measurement mode and the atomic force probe scanning measurement mode.
The first microscope objective 11 and the second microscope objective 2 of the atomic force probe scanning microscope component 3 are symmetrically arranged on the objective turntable 4, and the central lines of the first microscope objective 11 and the second microscope objective 2 are coincided with the measuring optical axis of the white light interference system 5 after rotating to the measuring position through the objective turntable 4.
The nanometer-scale vertical micro-displacement platform 7 is used for probe calibration, probe approaching sample piece and pre-pressure adjustment of a vertical scanning mode of a white light interference measurement mode and an atomic force probe scanning measurement mode.
The laser interference displacement metering system 8 is used for measuring the vertical scanning displacement of the microscope objective lens I11 in a white light interference measurement mode and the vertical offset of the atomic force probe 1 in an atomic force probe scanning measurement mode; and the pyramid prism 6 of the laser interference displacement metering system 8 is arranged at the upper end of the white light interference system 5.
Preferably, the white light interference system 5, the pyramid prism 6 of the laser interference displacement measurement system 8, the CCD camera 10, the objective turntable 4, the atomic force probe scanning microscope assembly 3 and the microscope objective lens 11 are all fixed on the nano-scale vertical micro-displacement platform 7.
Preferably, the displacement measuring direction of the laser interference displacement measuring system 8 is completely coincident with the measuring optical axis of the white light interference system 5.
Preferably, the center line of the corner cube prism 6 completely coincides with the measurement optical axis of the white light interference system 5.
Preferably, the sample 14 is mounted on the two-dimensional piezoceramic scanning platform 16, and the two-dimensional piezoceramic scanning platform 16 is fixed on the two-dimensional electric scanning platform 17.
Preferably, the center positions of the sample 14, the two-dimensional piezoceramic scanning platform 16 and the two-dimensional electric scanning platform 17 are coincident in the vertical direction and are coincident with the central axis of the measuring light of the white light interference system 5.
Preferably, the second laser interference displacement metering system 13 and the third laser interference displacement metering system 18 are used for displacement metering of dragging scanning of the sample piece 14 in a horizontal plane.
Preferably, the first reflector 12 of the second laser interference displacement metering system 13 and the second reflector 15 of the third laser interference displacement metering system 18 are fixed in two directions of the two-dimensional piezoelectric ceramic scanning platform 16, so that two paths of metering light rays are orthogonally arranged in the same horizontal plane and intersect with the extension line of the 8 metering directions of the first laser interference displacement metering system in the vertical direction at one point, and the intersection point is the intersection point of the central axis of the measuring light ray of the white light interference system 5 and the sample piece 14 in the white light interference measurement mode or the needle point of the atomic force probe 1 in the atomic force probe scanning measurement mode.
The measurement and control system 9 controls and drives the nanoscale vertical micro-displacement platform 7, the two-dimensional piezoelectric ceramic scanning platform 16 and the two-dimensional electric scanning platform 17 to receive the white light interference image of the cantilever surface of the sample piece 14 and the atomic force probe 1 and the laser interference signals of the laser interference displacement metering system 8, the laser interference displacement metering system two 13 and the laser interference displacement metering system three 18 which are acquired by the CCD camera 10 and process the measurement results of the sample piece 14 in the white light interference and atomic force probe scanning measurement mode.
Preferably, the measurement and control system 9 controls and drives the two-dimensional electric scanning platform 17 to drag the sample 14 to perform white light interference multi-range splicing measurement; the measurement and control system 9 further controls and drives the two-dimensional piezoelectric ceramic scanning platform 16 and the two-dimensional electric scanning platform 17 to position a target micro-nano structure characteristic region on the sample 14, and controls and drives the two-dimensional piezoelectric ceramic scanning platform 16 to drag the sample 14 to perform atomic force probe scanning measurement.
The following will specifically describe the measurement method of the trans-scale micro-nano structure three-dimensional measurement device of the present invention, and the measurement device is switched between a white light interferometry mode and an atomic force probe scanning measurement mode by rotating the objective lens turntable. The white light interference measurement mode is mainly used for large-scale measurement of micron-scale structures; for the measurement of the nano-scale structure, firstly searching and positioning an interested target structure characteristic region through a white light interference measurement mode, and then switching to an atomic force probe scanning measurement mode to carry out horizontal high-resolution measurement on the target structure characteristic region; for a trans-scale structure with micron-scale and nano-scale characteristics, firstly, a white light interference measurement mode is used for measuring the micron-scale structure in a large range, then an interested nano-scale characteristic region is searched and positioned through the white light interference measurement mode, then horizontal high-resolution measurement is carried out on the nano-scale structure through switching an objective turntable to an atomic force probe scanning measurement mode, and finally, the integral structure of the trans-scale micro-nano structure is obtained through a data fusion mode. According to the measuring method disclosed by the invention, the measurement of the large range and the high resolution of the surface of the trans-scale micro-nano structure can be realized.
The method specifically comprises the following steps:
the method comprises the following steps: manually rotating the objective turntable 4 to enable the first microscope objective 11 to be located at the lower end of the white light interference system 5, enabling the measuring device to work in a white light interference measuring mode, and placing the sample 14 at the center of the two-dimensional piezoelectric ceramic scanning platform 16 to enable the center of the sample 14 to be located right below the first microscope objective 11;
step two: after the nano-scale vertical micro-displacement platform 7 is controlled and driven to generate appropriate white light interference fringes on the surface of the sample 14, the nano-scale vertical micro-displacement platform 7 is controlled and driven to move upwards to lift the white light interference system 5 until the white light interference fringes completely disappear;
step three: the nanometer vertical micro-displacement platform 7 is driven by fine adjustment (at a micro step distance) to drive the white light interference system 5 to downwards carry out vertical scanning measurement until white light interference zero-order fringes scan the whole measured area of the sample piece 14, meanwhile, the pyramid prism 6 is driven to downwards move, the displacement of the microscope objective lens I11 downwards moving is measured through the laser interference displacement measurement system 8, the white light interference image of the corresponding measured area is obtained through the CCD camera 7, and the measurement result of the measured area is obtained through a white light interference reconstruction algorithm;
step four: and controlling and driving the two-dimensional electric scanning platform 17 to move the adjacent area of the measured area of the sample 14 in the third step to be right below the microscope objective lens 11, repeating the second step and the measurement, and repeating the fourth step until the measurement area required by the sample 14 is measured.
Step five: splicing the measurement results of all the white light interference measurement modes in the third step and the fourth step through a white light interference splicing algorithm to obtain a large-range measurement result of the sample 14;
step six: analyzing a large-range measurement result of the sample piece 14, searching and positioning a target micro-nano structure characteristic region of interest, and controlling and driving the two-dimensional electric scanning platform 17 and the two-dimensional piezoelectric ceramic scanning platform 16 to enable the target micro-nano structure characteristic region to be positioned under the microscope objective lens I11;
step seven: manually rotating the objective lens turntable 4 to enable the atomic force probe scanning microscope component 3 to be positioned at the lower end of the white light interference system 5, and enabling the measuring device to work in an atomic force probe scanning measuring mode;
step eight: generating proper white light interference fringes on a cantilever of the atomic force probe 1, controlling and driving the nano-scale vertical micro-displacement platform 7 to drive the white light interference system 5 to move downwards, enabling the needle tip of the atomic force probe 1 to be in contact with the surface of the sample piece 14 and generate micro extrusion, controlling and driving the two-dimensional piezoelectric ceramic scanning platform 16 to drag the sample piece 14 for measurement, the white light interference image on the cantilever of the atomic force probe 1 is obtained by the CCD camera 10, the white light interference fringe on the cantilever of the atomic force probe 1 is kept in a certain range by controlling and driving the nanometer vertical micro-displacement platform 7 to vertically move, and the displacement is measured and stored by a laser interference displacement measurement system 8, after the scanning measurement is finished, controlling and driving the nanoscale vertical micro-displacement platform 7 to separate the needle tip of the atomic force probe 1 from the surface of the sample 14, and obtaining a measurement result by using an atomic force probe scanning reconstruction algorithm;
step nine: and (5) controlling and driving the two-dimensional electric scanning platform 17 and the two-dimensional piezoelectric ceramic scanning platform 16 to enable the next target micro-nano structure characteristic region to be located under the microscope objective lens II 2, repeating the step eight to measure the next target micro-nano structure characteristic region until the measurement of all target micro-nano structure characteristic regions is completed, and completing the measurement.
In summary, compared with the prior art, the scheme of the invention has the following significant advantages:
1. the white light interference profilometer and the atomic force microscope are organically combined, and the common light path structure is matched with the objective lens rotary table to be rapidly switched in a white light interference and atomic force probe scanning measurement mode, so that the measurement of the large range and the high resolution of the surface of the trans-scale micro-nano structure is realized.
2. In the horizontal range, the two nanoscale laser interference displacement metering systems are used for orthogonal metering, so that the accuracy of large-range splicing measurement of white light interference and the accuracy of target structure characteristic positioning can be ensured.
3. The vertical displacement of the white light interference system is measured through the nano-scale laser interference displacement measurement system in the vertical direction, so that the accuracy of white light interference vertical scanning measurement and atomic force probe scanning measurement can be ensured.
4. The measuring light rays of the three nanoscale laser interference displacement measuring systems in the horizontal direction and the vertical direction are orthogonal in pairs in space and intersect at a measuring point, so that the influence of Abbe errors is eliminated, the measuring ranges of a white light interference measuring mode and an atomic force probe scanning measuring mode can be greatly expanded, the positioning precision of target structure characteristics is improved, and the accuracy of measuring results is ensured.
In a word, aiming at the measurement requirements of large range and high resolution of the surface of the trans-scale micro-nano structure, the invention provides a novel measurement device and a measurement method, which organically combine white light interferometry and atomic force probe microscopy, and provide three laser interference displacement measurement systems for orthogonal measurement in a three-dimensional range, thereby eliminating Abbe errors, ensuring the accuracy of white light interference large-range splicing measurement and target micro-nano structure characteristic positioning and atomic force probe scanning measurement, and realizing large-range and high resolution measurement of the surface of the trans-scale micro-nano structure. The method can realize measurement of a cross-scale (micron scale, submicron and below scale) structure in a set of system, and avoids the problem of positioning reference error caused by the fact that the micron scale structure and the submicron and below scale structure need to be measured by different measuring instruments, the problem that a measured area is difficult to find when a high-resolution instrument measures the submicron and below scale structure, and the problems of data fusion and long consumed time caused by the fact that a plurality of instruments cooperatively measure.
It will be appreciated that the embodiments of the system described above are merely illustrative, in that elements illustrated as separate components may or may not be physically separate, may be located in one place, or may be distributed over different network elements. Some or all of the modules can be selected according to actual needs to achieve the purpose of the scheme of the embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.
In addition, it should be understood by those skilled in the art that in the specification of the embodiments of the present invention, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
In the description of the embodiments of the invention, numerous specific details are set forth. It is understood, however, that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description. Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the invention, various features of the embodiments of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects.
However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed embodiments of the invention require more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of an embodiment of this invention.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the embodiments of the present invention, and not to limit the same; although embodiments of the present invention have been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A three-dimensional measuring device of a cross-scale micro-nano structure is characterized in that: the measuring device comprises an atomic force probe scanning microscope component, an objective lens rotary table, a white light interference system, a nano-scale vertical micro-displacement platform, a laser interference displacement metering system, a measurement and control system, a laser interference displacement metering system II, a sample piece, a two-dimensional piezoelectric ceramic scanning platform, a two-dimensional electric scanning platform and a laser interference displacement metering system III;
the objective lens rotary table enables the measuring device to be switched between a white light interference measuring mode and an atomic force probe scanning measuring mode through rotation; the white light interference system converges light reflected back through the sample piece and reference light passing through the microscope objective lens I on a beam splitter of the microscope objective lens I to generate white light interference fringes under a white light interference measurement mode, converges light reflected back through the cantilever surface of the atomic force probe and reference light of the microscope objective lens II of the atomic force probe scanning microscope assembly on the beam splitter of the microscope objective lens II of the atomic force probe scanning microscope assembly to generate white light interference fringes under an atomic force probe scanning measurement mode, and a CCD (charge coupled device) camera of the white light interference system is used for acquiring white light interference fringe images of the white light interference measurement mode and the atomic force probe scanning measurement mode;
the first microscope objective and the second microscope objective of the atomic force probe scanning microscope component are symmetrically arranged on the objective turntable, and the central lines of the first microscope objective and the second microscope objective are superposed with the measuring optical axis of the white light interference system after being rotated to the measuring position through the objective turntable;
the nanometer-scale vertical micro-displacement platform is used for probe calibration, probe approaching sample piece and pre-pressure adjustment of a vertical scanning mode of a white light interference measurement mode and an atomic force probe scanning measurement mode;
the laser interference displacement metering system is used for measuring the vertical scanning displacement of the microscope objective I in a white light interference measurement mode and the vertical offset of the atomic force probe in an atomic force probe scanning measurement mode; the pyramid prism of the laser interference displacement metering system is arranged at the upper end of the white light interference system;
the measurement and control system controls and drives the nanoscale vertical micro-displacement platform, the two-dimensional piezoelectric ceramic scanning platform and the two-dimensional electric scanning platform, receives the white light interference image of the surface of the cantilever of the atomic force probe and the laser interference signals of the laser interference displacement measurement system I, the laser interference displacement measurement system II and the laser interference displacement measurement system III, and processes and obtains the measurement result of the sample in the white light interference and atomic force probe scanning measurement mode.
2. The device for measuring the trans-scale micro-nano structure in three dimensions according to claim 1, characterized in that:
the white light interference system, the pyramid prism of the laser interference displacement measurement system, the CCD camera, the objective lens turntable, the atomic force probe scanning microscope component and the microscope objective lens are all fixed on the nanometer vertical micro-displacement platform.
3. The device for measuring the trans-scale micro-nano structure in three dimensions according to claim 1, characterized in that:
and the displacement measuring direction of the laser interference displacement measuring system is completely coincided with the measuring optical axis of the white light interference system.
4. The device for measuring the trans-scale micro-nano structure in three dimensions according to claim 1 or 3, characterized in that:
the central line of the pyramid prism is completely coincided with the measuring optical axis of the white light interference system.
5. The device for measuring the trans-scale micro-nano structure in three dimensions according to claim 1, characterized in that:
the sample piece is installed on the two-dimensional piezoelectric ceramic scanning platform, and the two-dimensional piezoelectric ceramic scanning platform is fixed on the two-dimensional electric scanning platform.
6. The device for measuring the trans-scale micro-nano structure in three dimensions according to claim 1 or 5, characterized in that:
the central positions of the sample piece, the two-dimensional piezoelectric ceramic scanning platform and the two-dimensional electric scanning platform are overlapped in the vertical direction and are overlapped with the central axis of the measuring light of the white light interference system.
7. The device for measuring the trans-scale micro-nano structure in three dimensions according to any one of claims 1, 5 and 6, wherein:
the measurement and control system controls and drives the two-dimensional electric scanning platform to drag the sample piece to carry out white light interference multi-range splicing measurement;
the measurement and control system also controls and drives the two-dimensional piezoelectric ceramic scanning platform and the two-dimensional electric scanning platform, positions a target micro-nano structure characteristic region on the sample piece, and controls and drives the two-dimensional piezoelectric ceramic scanning platform to drag the sample piece to carry out atomic force probe scanning measurement.
8. The device for measuring the trans-scale micro-nano structure according to any one of claims 1, 5, 6 and 7, wherein:
and the second laser interference displacement metering system and the third laser interference displacement metering system are used for displacement metering of dragging and scanning of the sample piece in a horizontal plane.
9. The device for measuring the trans-scale micro-nano structure according to any one of claims 1, 5, 6 and 7, wherein:
two paths of measuring light are kept in the same horizontal plane and are orthogonally arranged, the two paths of measuring light are perpendicular to the vertical direction, the extension lines of the measuring directions of the laser interference displacement measuring system are intersected at one point, and the intersection point is in a white light interference measuring mode.
10. The measurement method of the cross-scale micro-nano structure three-dimensional measurement device according to any one of claims 1 to 9, characterized by comprising the following steps:
the method comprises the following steps: rotating the objective lens turntable to enable the first microscope objective lens to be positioned at the lower end of the white light interference system, enabling the measuring device to work in a white light interference measuring mode, and placing the sample piece at the central position of the two-dimensional piezoelectric ceramic scanning platform to enable the center of the sample piece to be positioned right below the first microscope objective lens;
step two: after the nanoscale vertical micro-displacement platform is controlled and driven to generate appropriate white light interference fringes on the surface of the sample, the nanoscale vertical micro-displacement platform is controlled and driven to move upwards to lift the white light interference system until the white light interference fringes completely disappear;
step three: the nanometer-scale vertical micro-displacement platform is driven by fine adjustment to drive the white light interference system to downwards carry out vertical scanning measurement until white light interference zero-order fringes scan the whole measured area of the sample piece, the pyramid prism is driven to downwards move at the same time, the downwards moving displacement of the microscope objective lens is measured through the laser interference displacement measurement system, and a corresponding white light interference image of the measured area is obtained through the CCD camera;
step four: controlling and driving the two-dimensional electric scanning platform to enable the adjacent area of the measured area of the sample in the step three to move to the position right below the microscope objective lens I, repeating the step two and measuring the area, and repeating the step four until the measuring area required by the sample is measured;
step five: splicing the measurement results of all the white light interference measurement modes in the third step and the fourth step through a white light interference splicing algorithm to obtain the measurement result of the measurement area required by the sample;
step six: analyzing the measurement result of the sample, searching and positioning a target micro-nano structure characteristic region, and controlling and driving the two-dimensional electric scanning platform and the two-dimensional piezoelectric ceramic scanning platform to enable the target micro-nano structure characteristic region to be positioned under the first microscope objective;
step seven: rotating the objective lens turntable to enable the atomic force probe scanning microscope component to be located at the lower end of the white light interference system, wherein the measuring device works in an atomic force probe scanning measuring mode;
step eight: generating white light interference fringes on a cantilever of the atomic force probe, controlling and driving the nanometer-scale vertical micro-displacement platform to drive the white light interference system to move downwards, enabling a needle point of the atomic force probe to be in contact with the surface of the sample piece and generate extrusion, controlling and driving the two-dimensional piezoelectric ceramic scanning platform to drag the sample piece to carry out measurement, acquiring a white light interference image on the atomic force probe cantilever through the CCD camera, controlling and driving the nanoscale vertical micro-displacement platform to vertically move so as to keep the white light interference fringes on the atomic force probe cantilever within a preset range, and measuring and storing the displacement by the laser interference displacement metering system, after completing the scanning measurement, controlling and driving the nanoscale vertical micro-displacement platform to separate the needle tip of the atomic force probe from the surface of the sample piece, and obtaining a measurement result by using an atomic force probe scanning reconstruction algorithm;
step nine: and controlling and driving the two-dimensional electric scanning platform and the two-dimensional piezoelectric ceramic scanning platform to enable the next target micro-nano structure characteristic region to be located under the second microscope objective, repeating the step eight to measure the next target micro-nano structure characteristic region until the measurement of all target micro-nano structure characteristic regions is completed, and completing the measurement.
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