CN111854533B - Stealth bulletproof material and preparation method and application thereof - Google Patents

Stealth bulletproof material and preparation method and application thereof Download PDF

Info

Publication number
CN111854533B
CN111854533B CN201910351838.8A CN201910351838A CN111854533B CN 111854533 B CN111854533 B CN 111854533B CN 201910351838 A CN201910351838 A CN 201910351838A CN 111854533 B CN111854533 B CN 111854533B
Authority
CN
China
Prior art keywords
layer
stealth
bulletproof
resistor
ballistic resistant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910351838.8A
Other languages
Chinese (zh)
Other versions
CN111854533A (en
Inventor
黄瀛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongguan Tianwei Electromagnetic Technology Co ltd
Original Assignee
Dongguan Tianwei Electromagnetic Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongguan Tianwei Electromagnetic Technology Co ltd filed Critical Dongguan Tianwei Electromagnetic Technology Co ltd
Priority to CN201910351838.8A priority Critical patent/CN111854533B/en
Publication of CN111854533A publication Critical patent/CN111854533A/en
Application granted granted Critical
Publication of CN111854533B publication Critical patent/CN111854533B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F41—WEAPONS
    • F41H—ARMOUR; ARMOURED TURRETS; ARMOURED OR ARMED VEHICLES; MEANS OF ATTACK OR DEFENCE, e.g. CAMOUFLAGE, IN GENERAL
    • F41H5/00—Armour; Armour plates
    • F41H5/02—Plate construction
    • F41H5/04—Plate construction composed of more than one layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/12—Layered products comprising a layer of synthetic resin next to a fibrous or filamentary layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • B32B37/1018—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure using only vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/14—Printing or colouring
    • B32B38/145—Printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
    • B32B5/022—Non-woven fabric
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F41—WEAPONS
    • F41H—ARMOUR; ARMOURED TURRETS; ARMOURED OR ARMED VEHICLES; MEANS OF ATTACK OR DEFENCE, e.g. CAMOUFLAGE, IN GENERAL
    • F41H5/00—Armour; Armour plates
    • F41H5/007—Reactive armour; Dynamic armour
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
    • B32B2262/02—Synthetic macromolecular fibres
    • B32B2262/0253—Polyolefin fibres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Textile Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Aiming, Guidance, Guns With A Light Source, Armor, Camouflage, And Targets (AREA)

Abstract

The invention provides a stealth bulletproof material, a preparation method and application thereof. The stealth bulletproof material comprises wave-absorbing material composite layers and bulletproof layers which are alternately stacked; the wave-absorbing material composite layer is formed by compounding a metamaterial layer and a substrate layer; the metamaterial layer is a resistor disc array formed by periodically arranging resistor discs; the resistive patches in the metamaterial layers at the two ends of the stealth bulletproof material comprise square areas, frame areas surrounding the square areas and connecting arms connecting the square areas and the frame areas; the resistive patches in the inner metamaterial layer are square in shape. The stealth bulletproof material is prepared by a method that a resistance sheet array is firstly compounded on a basal layer to form a wave-absorbing material composite layer, and then the wave-absorbing material composite layer and the bulletproof layer material are sequentially stacked, laminated and compounded into a whole. The stealth bulletproof material provided by the invention has small thickness, and has good bulletproof function and broadband stealth function of 1.3-8 GHz.

Description

Stealth bulletproof material and preparation method and application thereof
Technical Field
The invention belongs to the technical field of stealth bulletproof, and particularly relates to a stealth bulletproof material, a preparation method and application thereof.
Background
In the field of national defense and military, various novel detection means and accurate guidance technologies are rapidly developed, battlefields become smaller and transparent, and stealth is increasingly important. Along with the development of phased array and other technologies, radar detection technology is developed in a long-term manner, a large number of radar wave detection systems such as early warning machines, ground radars, sea-based radars and the like are deployed in various countries, and radar detection frequencies mainly cover 1-18GHz. The ultra-wideband equipment stealth provides important guarantee for the survival of weapon systems, and becomes the first high technology in the military field. In complex and varied electromagnetic environments, armored vehicles will be subjected to all-round more deadly attacks in future combat, and many new and higher requirements are placed on protection technologies.
At present, the weight and thickness of single pure metal armor lead to the poor maneuvering characteristics of armored vehicles, can not meet the requirements of air transportation and quick deployment, and does not have radar wave stealth performance. The traditional stealth materials are mainly stealth paint and structural stealth materials.
Stealth coatings are easy to compound with armor materials and have certain advantages in terms of use and maintenance, but the problems of weight, wave absorption bandwidth and heat resistance are limited by the properties of the materials and are difficult to solve. Although the structural wave-absorbing material has certain advantages in terms of strength, toughness and even weight, as the electromagnetic wave absorption mechanism of the structural wave-absorbing material is not broken through, the electromagnetic wave absorption is enhanced by improving the loss of the absorbent, so that thicker wave-absorbing material is needed for realizing ultra-wideband stealth; and the structural stealth material is difficult to be compositely formed into a whole with the bulletproof armor material, the demand of stealth and bulletproof integration of modern weaponry cannot be met, and development of a new generation of integrated stealth and bulletproof material is urgently needed.
CN 105659794B discloses a bulletproof/stealth integrated light armor material, which consists of a ceramic layer, a fiber reinforced composite material layer and a high-strength glass fiber cloth reinforced composite material layer sandwiched between the ceramic layer and the fiber reinforced composite material layer; the high-strength glass fiber cloth reinforced composite material layer comprises a plurality of high-strength glass fiber cloths and 1-3 layers of amorphous metal thin-belt nets which are clamped between the high-strength glass fiber cloths; the fiber reinforced composite material layer is formed by stacking a carbon fiber cloth layer and an aramid fiber cloth layer, and the high-strength glass fiber cloth reinforced composite material layer is arranged on one surface of the carbon fiber cloth layer. Electromagnetic waves are absorbed by utilizing the properties of hysteresis loss, eddy current loss and the like of the amorphous metal thin-band net, but the wave absorption frequency band is 8-40GHz, and the amorphous metal thin-band net is not suitable for low-frequency radar waves.
Therefore, there is a need to develop a stealth ballistic resistant material with a broad wave absorption band and a high absorption rate at low frequencies.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a stealth bulletproof material, and a preparation method and application thereof. The stealth bulletproof material has good bulletproof function and broadband stealth function.
To achieve the purpose, the invention adopts the following technical scheme:
in one aspect, the invention provides a stealth bulletproof material, comprising a wave-absorbing material composite layer and a bulletproof layer which are alternately stacked;
the wave-absorbing material composite layer is formed by compounding a metamaterial layer and a substrate layer;
the metamaterial layer is a resistor disc array formed by periodically arranging resistor discs;
the resistor disc in the metamaterial layer at the outermost side of the stealth bulletproof material comprises a square area, a frame area surrounding the square area and a connecting arm connecting the square area and the frame area; the resistive patches in the inner metamaterial layer are square in shape.
According to the invention, the metamaterial layer and the bulletproof layer are adopted for impedance matching design, so that impedance matching of electromagnetic waves to the inside of the material is realized, a coupling effect is generated between interlayer in-layer structures, and the incident electromagnetic waves are coupled to the inside of the material for absorption, so that a stealth function is realized; the combination strength between the layers is ensured by integrating the base layer and the bulletproof layer materials with similar chemical properties through heating and plastic molding, so that stealth bulletproof integration is realized.
It should be noted that, in the present invention, the square area, the frame area and the connection arm are actually connected to each other, and are not physically actually separated areas, but are only areas artificially divided for convenience in describing the shape of the resistor sheet in the outer metamaterial layer. Compared with square resistor pieces with the same outline size, the invention can obviously improve the absorptivity of the stealth bulletproof material to electromagnetic waves by setting the resistor pieces in the outer metamaterial layer to be in the shape.
As a preferable technical scheme of the invention, the stealth bulletproof material comprises a first bulletproof layer, a first metamaterial layer, a first basal layer, a second bulletproof layer, a second metamaterial layer, a second basal layer, a third bulletproof layer, a third metamaterial layer, a third basal layer, a fourth bulletproof layer, a fourth metamaterial layer, a fourth basal layer and a fifth bulletproof layer which are sequentially overlapped;
the first metamaterial layer, the second metamaterial layer, the third metamaterial layer and the fourth metamaterial layer are resistor disc arrays formed by periodically arranging a plurality of first resistor discs, a plurality of second resistor discs, a plurality of third resistor discs and a plurality of fourth resistor discs respectively;
the first resistive sheet and the fourth resistive sheet each independently include a square region, a frame region surrounding the square region, and a connecting arm connecting the square region and the frame region;
the second and third resistive patches are square in shape.
In the invention, the first metamaterial layers are all arranged close to the electromagnetic wave source, and the fourth metamaterial layers are all arranged far away from the electromagnetic wave source, unless otherwise specified. The number of the metamaterial layers is preferably four, if the number of the metamaterial layers is reduced, the wave-absorbing frequency band of the stealth bulletproof material is obviously narrowed, and the broadband wave-absorbing effect is not achieved; if the number of metamaterial layers is increased, although the wave absorption frequency band of the stealth bulletproof material is widened, the absorptivity of electromagnetic waves is obviously reduced, and the stealth effect is deteriorated.
As a preferable embodiment of the present invention, the frame regions of the first resistor and the fourth resistor are square in both inner and outer contours.
Preferably, the side length of the square region of the first resistor disc and the fourth resistor disc is equal to or greater than the side length of the second resistor disc and the side length of the third resistor disc.
Preferably, the projection of the connecting arm of the first resistor disc on the fourth resistor disc has no overlapping area with the connecting arm of the fourth resistor disc.
If the projection of the connecting arm of the first resistor on the fourth resistor overlaps with the connecting arm of the fourth resistor, the total wave-absorbing area is reduced, and the absorption rate of the stealth bulletproof material to electromagnetic waves is reduced.
Preferably, the projection of the connecting arm of the first resistor disc on the fourth resistor disc forms an included angle of 45 degrees with the connecting arm of the fourth resistor disc.
In the present invention, the connecting arm of the first resistor and the connecting arm of the fourth resistor may be disposed at any position between the square region and the frame region of the corresponding resistor on the premise that the foregoing conditions are satisfied. As a most preferable technical scheme, the connecting arm of one of the first resistor disc and the connecting arm of the fourth resistor disc are arranged at the centers of the square area and the frame area of the corresponding resistor disc, and the connecting arm of the other one of the first resistor disc and the connecting arm of the fourth resistor disc is arranged at the diagonal line of the square area and the frame area of the corresponding resistor disc.
Preferably, the sheet resistance of the first resistor sheet is 150-300 Ω, for example, 150 Ω, 160 Ω, 180 Ω, 200 Ω, 220 Ω, 230 Ω, 250 Ω, 260 Ω, 280 Ω, 300 Ω, etc.; the frame region has an outer contour side length of 36-38mm (e.g., 36mm, 36.5mm, 37mm, 37.5mm, 38mm, etc.), an inner contour side length of 30-34mm (e.g., 30mm, 30.5mm, 31mm, 31.5mm, 32mm, 32.5mm, 33mm, 33.5mm, 34mm, etc.), and a square region has a side length of 16-26mm (e.g., 16mm, 17mm, 18mm, 19mm, 20mm, 21mm, 22mm, 23mm, 24mm, 25mm, 26mm, etc.);
the square resistance of the second resistor disc is 100-500 omega, and can be, for example, 100 omega, 120 omega, 150 omega, 180 omega, 200 omega, 220 omega, 250 omega, 280 omega, 300 omega, 320 omega, 350 omega, 380 omega, 400 omega, 420 omega, 450 omega, 480 omega, 500 omega or the like; the side length is 14-24mm, for example, 14mm, 15mm, 16mm, 17mm, 18mm, 19mm, 20mm, 21mm, 22mm, 23mm or 24mm, etc.;
the sheet resistance of the third resistor sheet is 100-600Ω, for example, may be 100Ω, 120Ω, 150Ω, 180Ω, 200Ω, 220Ω, 250Ω, 280Ω, 300Ω, 200Ω, 400Ω, 200Ω, 150Ω, 550Ω, 55Ω, 550Ω, or the like; the side length is 16-26mm, for example, 16mm, 17mm, 18mm, 19mm, 20mm, 21mm, 22mm, 23mm, 24mm, 25mm or 26mm, etc.;
the sheet resistance of the fourth resistor sheet is 50-250Ω, for example, 50Ω, 60deg.OMEGA, 70Ω, 80deg.C, 90Ω, 100deg.C, 120Ω, 130Ω, 150Ω, 160Ω, 180Ω, 200Ω, 220Ω, 230Ω, 250Ω, etc.; the frame region has an outer contour side length of 36-38mm (e.g., 36mm, 36.5mm, 37mm, 37.5mm, 38mm, etc.), an inner contour side length of 30-34mm (e.g., 30mm, 30.5mm, 31mm, 31.5mm, 32mm, 32.5mm, 33mm, 33.5mm, 34mm, etc.), and a square region has a side length of 18-26mm (e.g., 18mm, 19mm, 20mm, 21mm, 22mm, 23mm, 24mm, 25mm, 26mm, etc.).
Preferably, the width of the connecting arms of the first resistor disc and the fourth resistor disc is 1-4mm each independently.
According to the invention, through designing the resistances and the shape and the dimensions of the four resistance sheets and matching with the bulletproof layer, the impedance matching of electromagnetic waves to the inside of the stealth bulletproof material is realized, and the reflectivity of the electromagnetic waves with the frequency of 1.3-8GHz is less than or equal to-10 dB. Wherein, the resistance and the size of the first resistor sheet are larger, so as to increase the primary absorption rate of the incident electromagnetic wave. The fourth resistor sheet has smaller resistance and larger size, and the main purpose is to increase the reflection of electromagnetic waves, and reflect the electromagnetic waves reaching the fourth metamaterial layer back to absorb the electromagnetic waves again, so that the absorption rate of the whole stealth bulletproof material to the electromagnetic waves is increased.
In the present invention, the resistances and the dimensions of the first resistance sheet, the second resistance sheet, the third resistance sheet, and the fourth resistance sheet are preferably kept within the above-described specific ranges. If the resistance is too large, the absorption of the stealth bulletproof material to the low-frequency electromagnetic waves is reduced; if the resistance is too small, the absorption capacity of the stealth bulletproof material to electromagnetic waves is poor, and even the wave absorbing function is lost; if the size of the material is too large, the wave-absorbing frequency band of the stealth bulletproof material can move towards the low frequency direction, and the absorption rate is reduced; if the size is too small, the wave-absorbing frequency band of the stealth bulletproof material moves in the high-frequency direction, the absorption of radar waves decreases, and the stealth effect deteriorates.
As a preferable technical scheme of the invention, the arrangement period of the resistor disc arrays of the first metamaterial layer, the second metamaterial layer, the third metamaterial layer and the fourth metamaterial is equal and is 40-45mm; for example, 40mm, 41mm, 42mm, 43mm, 44mm, 45mm, or the like can be used.
Preferably, the distance between the second metamaterial layer and the third metamaterial layer is 1-2mm; for example, it may be 1mm, 1.1mm, 1.2mm, 1.3mm, 1.4mm, 1.5mm, 1.6mm, 1.7mm, 1.8mm, 1.9mm, 2mm or the like.
It should be noted that, the distance between the second metamaterial layer and the third metamaterial layer is equal to the thickness of the second substrate layer and the third bulletproof layer.
In the invention, the distance between the second metamaterial layer and the third metamaterial layer can be controlled by adjusting the thickness of the third bulletproof layer, and the increase or decrease of the distance can lead to the wide narrowing of the absorption bandwidth of the stealth bulletproof material.
As a preferable embodiment of the present invention, each of the first substrate layer, the second substrate layer, the third substrate layer, and the fourth substrate layer is independently a PE film or an aramid sheet.
The primary function of the substrate layer in the invention is to serve as a carrier for the metamaterial layer and to be integrated with the bulletproof layer through plastic molding.
Preferably, the thicknesses of the first, second, third and fourth substrate layers are each independently 0.01-0.05mm; for example, 0.01mm, 0.02mm, 0.03mm, 0.04mm, 0.05mm, or the like can be used.
As a preferred embodiment of the present invention, the dielectric constants of the first, second, third, fourth and fifth bulletproof layers are each independently 2.3 to 2.8; for example, it may be 2.3, 2.4, 2.5, 2.6, 2.7, or 2.8.
Preferably, the first, second, third, fourth and fifth ballistic layers each independently comprise at least one layer of a fibrous composite ballistic material.
The thicknesses of the first bulletproof layer, the second bulletproof layer, the fourth bulletproof layer and the fifth bulletproof layer are not particularly limited, and can be adjusted according to the thickness of the whole stealth bulletproof material by a person skilled in the art; the thickness of the third bulletproof layer is adjusted according to the distance between the second metamaterial layer and the third metamaterial layer.
Preferably, the fiber composite ballistic material is an Ultra High Molecular Weight Polyethylene (UHMWPE) laid fabric or an aramid fiber laid fabric.
Preferably, when the substrate layer is a PE film, the fiber composite bulletproof material is ultra-high molecular weight polyethylene laid cloth; when the substrate layer is an aramid fiber board, the fiber composite bulletproof material is selected from aramid fiber laid cloth, so that all layers of materials of the stealth bulletproof material can be better plasticized and molded into a whole, and the overall mechanical strength is improved.
Preferably, the areal density of the fibrous composite ballistic resistant material is in the range of 140 to 200g/m 2 For example, 140g/m 2 、150g/m 2 、160g/m 2 、170g/m 2 、180g/m 2 、190g/m 2 Or 200g/m 2 Etc.
The higher the areal density of the fiber composite ballistic material, the better its ballistic performance, but also results in a greater overall thickness of the stealth ballistic material.
Preferably, the thickness of the fiber composite ballistic resistant material is 0.01-0.04mm; for example, 0.01mm, 0.02mm, 0.03mm, 0.04mm, or the like can be used.
As a preferable technical scheme of the invention, the first resistor disc, the second resistor disc, the third resistor disc and the fourth resistor disc are obtained by curing a mixture of carbon paste ink and epoxy resin.
Preferably, the mass ratio of the carbon paste ink to the epoxy resin is 1:1-10; for example, it may be 1:1, 1:2, 1:3, 1:4, 1:5, 1:6, 1:7, 1:8, 1:9, or 1:10, etc.
As a preferable technical scheme of the invention, the total thickness of the stealth bulletproof material is 18-32mm; for example, 18mm, 19mm, 20mm, 21mm, 22mm, 23mm, 24mm, 25mm, 26mm, 27mm, 28mm, 29mm, 30mm, 31mm, 32mm, or the like can be used.
In a second aspect, the invention provides a method for preparing the stealth bulletproof material, comprising the following steps:
(1) Forming a wave-absorbing material composite layer by compositing an array of resistance cards on a basal layer;
(2) And (3) stacking the bulletproof layer material and the wave-absorbing material composite layer obtained in the step (1) in sequence, and laminating and compositing the bulletproof layer material and the wave-absorbing material composite layer into a whole to obtain the stealth bulletproof material.
As a preferred embodiment of the present invention, the method of the composite resistor array in the step (1) is screen printing.
Preferably, the lamination in step (2) is performed in a vacuum laminator.
Preferably, the laminating step is: vacuum-pumping to absolute pressure of 0.01-0.1Pa, and maintaining for 30-60min (30 min, 35min, 40min, 45min, 50min, 55min or 60min, etc.) under pressure of 5-8MPa (e.g. 5MPa, 5.5MPa, 6MPa, 6.5MPa, 7MPa, 7.5MPa or 8MPa, etc.) and temperature of 100-110 deg.C (e.g. 100deg.C, 101 deg.C, 102 deg.C, 103 deg.C, 104 deg.C, 105 deg.C, 106 deg.C, 107 deg.C, 108 deg.C, 109 deg.C or 110 deg.C, etc.); then, the mixture is maintained for 1 to 1.5 hours (e.g., 1 hour, 1.1 hour, 1.2 hours, 1.3 hours, 1.4 hours, 1.5 hours, etc.) under a pressure of 15 to 20MPa (e.g., 15MPa, 15.5MPa, 16MPa, 16.5MPa, 17MPa, 17.5MPa, 18MPa, 18.5MPa, 19MPa, 19.5MPa, 20MPa, etc.) and a temperature of 130 to 140 ℃ (e.g., 130 ℃, 131 ℃, 132 ℃, 133 ℃, 134 ℃, 135 ℃, 136 ℃, 137 ℃, 138 ℃, 139 ℃, 140 ℃, etc.).
As a preferable technical scheme of the invention, the preparation method comprises the following steps:
(1) Screen printing a resistor disc array on the basal layer to form a wave-absorbing material composite layer;
(2) Sequentially stacking the bulletproof layer material and the wave-absorbing material composite layer obtained in the step (1), placing the materials in a vacuum laminating machine, vacuumizing to absolute pressure of 0.01-0.1Pa, and laminating for 30-60min under the conditions that the pressure is 5-8MPa and the temperature is 100-110 ℃; and then laminating for 1-1.5h under the conditions of 15-20MPa and 130-140 ℃ to obtain the stealth bulletproof material.
In a third aspect, the present invention provides the use of a stealth ballistic resistant material as described above as a protective material for military vehicles, aircraft or detectors.
Compared with the prior art, the invention has the following beneficial effects:
according to the stealth bulletproof material provided by the invention, impedance matching design is carried out on the metamaterial layer and the bulletproof layer, so that a coupling effect is generated between structural units in the interlayer layers, and the wave-absorbing stealth function is realized; the base layer and the bulletproof layer with similar chemical properties are adopted, and are heated and plastically molded into a whole, so that the bonding strength between layers is ensured, and the stealth bulletproof integration is realized. Compared with square resistor plates, the design of the shape of the resistor plates in the outer metamaterial layer further increases the absorptivity of the stealth bulletproof material to electromagnetic waves. Compared with the structural stealth material, the stealth bulletproof material provided by the invention does not need to use a large amount of electromagnetic wave absorbent, has a thinner overall thickness, has good stealth function for the reflectivity of electromagnetic waves of 1.3-8GHz being less than or equal to-10 dB, and can be used as a protective material for military, airplanes or detectors.
Drawings
Fig. 1 is a schematic cross-sectional view of a stealth ballistic resistant material according to an embodiment of the present invention;
wherein 11 is a first bulletproof layer, 12 is a first metamaterial layer, 13 is a first substrate layer, 21 is a second bulletproof layer, 22 is a second metamaterial layer, 23 is a second substrate layer, 31 is a third bulletproof layer, 32 is a third metamaterial layer, 33 is a third substrate layer, 41 is a fourth bulletproof layer, 42 is a fourth metamaterial layer, 43 is a fourth substrate layer, 51 is a fifth bulletproof layer, 121 is a first resistor, 221 is a second resistor, 321 is a third resistor, and 421 is a fourth resistor.
Fig. 2 is a schematic structural diagram of a resistor sheet of the stealth bulletproof material provided in the embodiment of the present invention in one cycle;
wherein 121 is a first resistor, 221 is a second resistor, 321 is a third resistor, and 421 is a fourth resistor.
Fig. 3 is a schematic view of the shape of a first resistive sheet of stealth ballistic resistant material according to an embodiment of the invention.
Fig. 4 is a schematic shape of a fourth resistive sheet of stealth ballistic resistant material according to an embodiment of the invention.
Fig. 5 is a schematic view of a projection of a first resistive patch onto a fourth resistive patch in the stealth ballistic resistant material according to an embodiment of the present invention;
wherein 121 is a first resistor, 421 is a fourth resistor, a is a projection view of the first resistor on the fourth resistor, and a direction indicated by a vertical arrow is a projection direction.
Fig. 6 is a graph of reflectance of electromagnetic waves at different frequencies for the stealth ballistic material provided in example 1.
Fig. 7 is a graph of reflectance of electromagnetic waves at different frequencies for the stealth ballistic materials provided in example 2.
Fig. 8 is a graph of reflectance of electromagnetic waves at different frequencies for the stealth ballistic material provided in example 3.
Fig. 9 is a graph of reflectance of electromagnetic waves at different frequencies for the stealth ballistic materials provided in example 4.
Fig. 10 is a graph of reflectance of electromagnetic waves at different frequencies for the stealth ballistic materials provided in example 5.
Fig. 11 is a graph of reflectance of electromagnetic waves at different frequencies for the stealth ballistic material provided in example 6.
Fig. 12 is a graph of reflectance of electromagnetic waves at different frequencies for the stealth ballistic materials provided in example 7.
Fig. 13 is a graph of reflectance of electromagnetic waves at different frequencies for the stealth ballistic material provided in example 8.
Fig. 14 is a graph of reflectance of electromagnetic waves at different frequencies for the stealth ballistic material provided in example 9.
Fig. 15 is a graph of the reflectivity of the stealth ballistic material provided in example 10 versus electromagnetic waves of different frequencies.
Fig. 16 is a graph of the reflectivity of the stealth ballistic material provided in example 11 versus electromagnetic waves of different frequencies.
Fig. 17 is a graph of the reflectivity of the stealth ballistic material provided in example 12 versus electromagnetic waves of different frequencies.
Fig. 18 is a graph of reflectance of electromagnetic waves at different frequencies for the stealth ballistic material provided in example 13.
Fig. 19 is a graph of the reflectivity of the stealth ballistic material provided in comparative example 1 for electromagnetic waves of different frequencies.
Fig. 20 is a graph of the reflectivity of the stealth ballistic material provided in comparative example 2 versus electromagnetic waves of different frequencies.
Detailed Description
The technical scheme of the invention is further described below by the specific embodiments with reference to the accompanying drawings. It should be apparent to those skilled in the art that the detailed description is merely provided to aid in understanding the invention and should not be taken as limiting the invention in any way.
Example 1
This example provides a stealth ballistic resistant material comprising a first ballistic resistant layer 11, a first metamaterial layer 12, a first substrate layer 13, a second ballistic resistant layer 21, a second metamaterial layer 22, a second substrate layer 23, a third ballistic resistant layer 31, a third metamaterial layer 32, a third substrate layer 33, a fourth ballistic resistant layer 41, a fourth metamaterial layer 42, a fourth substrate layer 43 and a fifth ballistic resistant layer 51, which are laminated in sequence, as shown in fig. 1 and 2;
wherein the first bulletproof layer 11, the second bulletproof layer 21, the third bulletproof layer 31, the fourth bulletproof layer 41 and the fifth bulletproof layer 51 are respectively composed of UHMWPE weftless fabrics, and the thicknesses of the UHMWPE weftless fabrics are 8mm,7mm,1mm,6mm and 5mm;
the materials of the first base layer 13, the second base layer 23, the third base layer 33 and the fourth base layer 43 are PE films;
the first metamaterial layer 12 is a resistor disc array formed by periodically arranging a plurality of first resistor discs 121, and the arrangement period is 40mm; the sheet resistance of the first resistor 121 is 220Ω, and has a shape as shown in fig. 3, and includes a square region, a frame region surrounding the square region, and 4 connecting arms connecting the square region and the frame region, wherein the square region has a side length of 24mm, the frame region has an inner and outer contour each of a square shape, the inner contour has a side length of 32mm, the outer contour has a side length of 36mm, and the connecting arms have a width of 3mm;
the second metamaterial layer 22 is a resistor disc array formed by periodically arranging a plurality of second resistor discs 221, the arrangement period is 40mm, the shape of the second resistor discs 221 is square, the square resistance is 200Ω, and the side length is 24mm;
the third metamaterial layer 32 is a resistor array formed by periodically arranging a plurality of third resistors 321, the arrangement period is 40mm, the shape of the third resistor 321 is square, the square resistance is 200Ω, the side length is 22mm, and the distance between the third metamaterial layer 32 and the second metamaterial layer 22 is 1mm (approximately equal to the thickness of the third bulletproof layer 31);
the fourth metamaterial layer 42 is a resistor array formed by periodically arranging a plurality of fourth resistors 421, the arrangement period is 40mm, the square resistance of the fourth resistors 421 is 100deg.C, the shape is as shown in FIG. 4, the four resistors comprise a square area, a frame area surrounding the square area, and 4 connecting arms connecting the square area and the frame area, wherein the side length of the square area is 24mm, the inner and outer contours of the frame area are square, the side length of the inner contour is 34mm, the side length of the outer contour is 38mm, and the width of the connecting arms is 3mm; as shown in fig. 5, the projection of the connecting arm of the first resistor disc 121 on the fourth resistor disc 421 has no overlapping area with the connecting arm of the fourth resistor disc 421, and forms an included angle of 45 °;
the centers of the first resistor disc 121, the second resistor disc 221, the third resistor disc 321 and the fourth resistor disc 421 are on the same axis perpendicular to the stealth bulletproof material, and the outer contour lines are parallel to each other;
the total thickness of the stealth ballistic resistant material was 27mm.
It should be noted that, in the present invention, the square area, the frame area and the connecting arm are actually connected to each other, and are not physically separated areas, but are areas artificially divided for convenience in describing the shapes of the first resistor sheet and the fourth resistor sheet.
The preparation method of the stealth bulletproof material comprises the following steps:
(1) Preparing resistive ink from carbon paste ink and epoxy resin according to a mass ratio of 1:8, and then respectively screen-printing an array of a first resistor 121, a second resistor 221, a third resistor 321 and a fourth resistor 421 on 4 PE films according to required parameter indexes (the square resistance of the resistor can be adjusted according to the printing thickness);
(2) Sequentially stacking UHMWPE non-woven cloth and the PE film printed with the resistor sheet array obtained in the step (1), placing in a vacuum laminating machine, vacuumizing to absolute pressure of 0.01Pa, and laminating for 30min under the condition that the pressure is 5MPa and the temperature is 100 ℃; and then laminating for 1h under the condition of 20MPa of pressure and 130 ℃ of temperature to obtain the stealth bulletproof material.
Example 2
This example provides a stealth ballistic resistant material that differs from example 1 in that:
the sheet resistance of the first resistor 121 is 150Ω, the outer contour side length of the frame area is 36mm, the inner contour side length of the frame area is 30mm, and the side length of the square area is 16mm;
the sheet resistance of the second resistor 221 is 100deg.C, and the side length is 14mm;
the sheet resistance of the third resistive patch 321 is 100deg.C, the side length is 16mm, and the distance between the third metamaterial layer 32 and the second metamaterial layer 22 is 1.3mm;
the sheet resistance of the fourth resistor 421 was 50Ω, the outer contour side length of the frame area was 36mm, the inner contour side length of the frame area was 30mm, and the side length of the square area was 18mm.
Example 3
This example provides a stealth ballistic resistant material that differs from example 1 in that:
the sheet resistance of the first resistor 121 is 250Ω, the outer contour side length of the frame region is 37mm, the inner contour side length of the frame region is 32mm, and the side length of the square region is 20mm;
the sheet resistance of the second resistor 221 is 400 Ω and the side length is 18mm;
the sheet resistance of the third resistive patch 321 is 400Ω, the side length is 20mm, and the distance between the third metamaterial layer 32 and the second metamaterial layer 22 is 1.6mm;
the sheet resistance of the fourth resistor 421 was 180Ω, the outer contour side length of the frame area was 37mm, the inner contour side length of the frame area was 32mm, and the side length of the square area was 20mm.
Example 4
This example provides a stealth ballistic resistant material that differs from example 1 in that:
the sheet resistance of the first resistor 121 is 300Ω, the outer contour side length of the frame area is 38mm, the inner contour side length of the frame area is 34mm, and the side length of the square area is 26mm;
the sheet resistance of the second resistor 221 is 500Ω and the side length is 24mm;
the sheet resistance of the third resistive patch 321 is 600Ω, the side length is 26mm, and the distance between the third metamaterial layer 32 and the second metamaterial layer 22 is 2mm;
the sheet resistance of the fourth resistor 421 is 250Ω, the outer contour side length of the frame area is 38mm, the inner contour side length of the frame area is 34mm, and the side length of the square area is 26mm;
the first, second, third, fourth and fifth ballistic layers 11, 21, 31, 41 and 51 are each composed of an aramid fiber laid fabric;
the materials of the first base layer 13, the second base layer 23, the third base layer 33, and the fourth base layer 43 are all aramid sheets.
Example 5
This example provides a stealth ballistic resistant material that differs from example 1 in that: the distance between the third metamaterial layer 32 and the second metamaterial layer 22 is 0.7mm.
Example 6
This example provides a stealth ballistic resistant material that differs from example 1 in that: the distance between the third metamaterial layer 32 and the second metamaterial layer 22 is 2.3mm.
Example 7
This example provides a stealth ballistic resistant material that differs from example 1 in that:
the sheet resistance of the first resistor 121 is 330 Ω, the sheet resistance of the second resistor 221 is 530 Ω, the sheet resistance of the third resistor 321 is 630 Ω, and the sheet resistance of the fourth resistor 421 is 280 Ω.
Example 8
This example provides a stealth ballistic resistant material that differs from example 1 in that:
the sheet resistance of the first resistor 121 is 120Ω, the sheet resistance of the second resistor 221 is 80Ω, the sheet resistance of the third resistor 321 is 80Ω, and the sheet resistance of the fourth resistor 421 is 40Ω.
Example 9
This example provides a stealth ballistic resistant material that differs from example 1 in that:
the outer contour side length of the frame area of the first resistor disc 121 is 40mm, the inner contour side length of the frame area is 36mm, the side length of the square area is 28mm, the side length of the second resistor disc 221 is 26mm, the side length of the third resistor disc 321 is 28mm, the outer contour side length of the frame area of the fourth resistor disc 421 is 40mm, the inner contour side length of the frame area is 36mm, the side length of the square area is 28mm, and the arrangement period is 42mm.
Example 10
This example provides a stealth ballistic resistant material that differs from example 1 in that:
the outer contour side of the frame area of the first resistor disc 121 is 34mm, the inner contour side of the frame area is 28mm, the side of the square area is 14mm, the side of the second resistor disc 221 is 12mm, the side of the third resistor disc 321 is 14mm, the outer contour side of the frame area of the fourth resistor disc 421 is 34mm, the inner contour side of the frame area is 28mm, and the side of the square area is 14mm.
Example 11
The difference from embodiment 1 is that the fourth resistive sheet 421 is replaced with a resistive sheet having the same shape as the first resistive sheet 121.
Example 12
This example provides a stealth ballistic resistant material that differs from example 1 in that:
the dielectric constants of the materials of the first, second, third, fourth, and fifth bulletproof layers 11, 21, 31, 41, and 51 are 2.0.
Example 13
This example provides a stealth ballistic resistant material that differs from example 1 in that:
the dielectric constants of the materials of the first, second, third, fourth and fifth bulletproof layers 11, 21, 31, 41 and 51 are 3.3.
Comparative example 1
The difference from example 1 is that: the first resistor disc is square in shape and has a side length of 36mm; the fourth resistor disc was square in shape and had a side length of 38mm.
Comparative example 2
The difference from example 1 is that: the second ballistic layer 21, the second metamaterial layer 22 and the second substrate layer 23 are removed.
The above examples 1 to 13 and comparative examples 1 to 2 were tested for the wave-absorbing properties as follows:
the test is carried out according to a radar wave reflectivity test method given by GJB 2038A-2011. The method comprises the steps of placing a receiving and transmitting antenna on an arch frame, placing a standard metal plate on a sample table, under the control of a main control computer, transmitting a signal source of a vector network analyzer to a transmitting antenna through a power amplifier, reflecting a transmitting signal to a receiving antenna (which is equivalent to total reflection at the moment) through the metal plate, and finally receiving the reflected signal by the vector analyzer to obtain a group of data; then the standard metal plate is replaced by the sample to be tested, and the system acquires a set of data. The reflectivity of the tested sample can be obtained by comparing the two groups of data.
The results of the above test are shown in fig. 6-20.
As can be seen from figures 6-9, the stealth bulletproof material provided by the invention has higher electromagnetic wave absorptivity for electromagnetic waves with the reflectivity less than or equal to-10 dB of electromagnetic waves with the frequency of 1.3-8 GHz.
When the distance between the second metamaterial layer and the third metamaterial layer is too small or too large, the absorption bandwidth of the stealth bulletproof material is greatly narrowed, and the electromagnetic wave absorptivity is reduced (fig. 10 and 11).
When the resistances of the first, second, third, and fourth resistive sheets are too large, absorption of the low-frequency electromagnetic waves by the stealth bulletproof material is reduced (fig. 12); when its resistance is too small, the absorption capacity of the stealth bulletproof material against electromagnetic waves becomes poor (fig. 13).
When the sizes of the first, second, third, and fourth resistive sheets are excessively large, the wave-absorbing frequency band of the stealth bulletproof material moves toward the low frequency direction, and the absorption rate decreases (fig. 14); when the size is too small, the wave-absorbing frequency band of the stealth bulletproof material shifts in the high-frequency direction, and the absorption of radar waves decreases, and the stealth effect deteriorates (fig. 15).
When the fourth resistive sheet is identical in shape to the first resistive sheet, the total wave-absorbing area becomes small and the absorption rate of the stealth bulletproof material to electromagnetic waves decreases due to the overlapping of the connecting arm regions (fig. 16).
When the dielectric constant of the ballistic layer is too small or too large, the impedance match between the metamaterial layer and the ballistic layer can be affected, resulting in reduced absorption of electromagnetic waves by the stealth ballistic material (fig. 17 and 18).
When the shapes of the first and fourth resistive sheets are square, the wave-absorbing frequency band of the stealth bulletproof material is significantly narrowed, and the absorptivity to electromagnetic waves is significantly lowered (fig. 19).
When the number of metamaterial layers is reduced, the absorption band of the stealth bulletproof material is significantly narrowed (fig. 20).
The applicant declares that the above is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be apparent to those skilled in the art that any changes or substitutions that are easily conceivable within the technical scope of the present invention disclosed by the present invention fall within the scope of the present invention and the disclosure.

Claims (18)

1. The stealth bulletproof material is characterized by comprising a first bulletproof layer, a first metamaterial layer, a first basal layer, a second bulletproof layer, a second metamaterial layer, a second basal layer, a third bulletproof layer, a third metamaterial layer, a third basal layer, a fourth bulletproof layer, a fourth metamaterial layer, a fourth basal layer and a fifth bulletproof layer which are sequentially overlapped;
the first metamaterial layer, the second metamaterial layer, the third metamaterial layer and the fourth metamaterial layer are resistor disc arrays formed by periodically arranging a plurality of first resistor discs, a plurality of second resistor discs, a plurality of third resistor discs and a plurality of fourth resistor discs respectively;
the first resistive sheet and the fourth resistive sheet each independently include a square region, a frame region surrounding the square region, and a connecting arm connecting the square region and the frame region;
the shapes of the second resistor disc and the third resistor disc are square;
the inner and outer contours of the frame areas of the first resistor disc and the fourth resistor disc are square;
the side length of the square area of the first resistor disc and the fourth resistor disc is larger than or equal to the side length of the second resistor disc and the side length of the third resistor disc;
the projection of the connecting arm of the first resistor disc on the fourth resistor disc is not overlapped with the connecting arm of the fourth resistor disc;
the projection of the connecting arm of the first resistor disc on the fourth resistor disc forms an included angle of 45 degrees with the connecting arm of the fourth resistor disc;
the square resistance of the first resistor disc is 220-300 omega, the outer contour side length of the frame area is 36-38mm, the inner contour side length of the frame area is 30-34mm, and the side length of the square area is 16-26 mm;
the square resistance of the second resistor disc is 180-220 omega, and the side length is 14-24 mm;
the sheet resistance of the third resistor disc is 180-220 omega, and the side length is 16-26 mm;
the sheet resistance of the fourth resistor disc is 50-150Ω, the outer contour side length of the frame area is 36-38mm, the inner contour side length of the frame area is 30-34mm, and the side length of the square area is 18-26 mm.
2. The stealth ballistic resistant material of claim 1 wherein the array of resistive sheets of the first metamaterial layer, the second metamaterial layer, the third metamaterial layer and the fourth metamaterial are arranged in equal periods of 40-45 mm.
3. The stealth ballistic resistant material according to claim 1, wherein the distance between the second metamaterial layer and the third metamaterial layer is 1-2 mm.
4. The stealth ballistic resistant material according to claim 1, wherein the first, second, third and fourth substrate layers are each independently a PE film or an aramid sheet.
5. The stealth ballistic resistant material according to claim 1, wherein the first, second, third and fourth substrate layers each independently have a thickness of 0.01-0.05 mm.
6. The stealth ballistic resistant material according to claim 1, wherein the dielectric constants of the first, second, third, fourth and fifth ballistic layers are each independently 2.3-2.8.
7. The stealth ballistic resistant material of claim 1 wherein the first, second, third, fourth and fifth ballistic resistant layers each independently comprise at least one layer of a fibrous composite ballistic resistant material.
8. The stealth ballistic resistant material of claim 7 wherein the fibrous composite ballistic resistant material is an ultra high molecular weight polyethylene laid fabric or an aramid fiber laid fabric.
9. The stealth ballistic resistant material according to claim 7, wherein the fiber composite ballistic resistant material has an areal density of 140-200g/m 2 。
10. The stealth ballistic resistant material according to claim 9, wherein the fibrous composite ballistic resistant material has a thickness of 0.01-0.04 mm.
11. The stealth ballistic resistant material of claim 1 wherein the first, second, third and fourth resistive sheets are obtained from a mixture of carbon paste ink and epoxy resin after curing.
12. The stealth ballistic resistant material according to claim 11, wherein the mass ratio of the carbon paste ink to the epoxy resin is 1:1-10.
13. The stealth ballistic resistant material according to claim 1, wherein the stealth ballistic resistant material has a total thickness of 18-32 mm.
14. A method of producing a stealth ballistic resistant material according to any one of claims 1 to 13, wherein the method of producing comprises the steps of:
(1) A resistance sheet array is compounded on the basal layer to form a wave-absorbing material compound layer;
(2) And (3) stacking the bulletproof layer material and the wave-absorbing material composite layer obtained in the step (1) in sequence, and laminating and compositing the bulletproof layer material and the wave-absorbing material composite layer into a whole to obtain the stealth bulletproof material.
15. The method of claim 14, wherein the method of fabricating the composite resistor array in step (1) is screen printing.
16. The method of claim 14, wherein the laminating in step (2) is performed in a vacuum laminator.
17. The method of manufacturing according to claim 16, wherein the step of laminating is: vacuumizing to absolute pressure of 0.01-0.1-Pa, and maintaining at 100-110deg.C under 5-8MPa for 30-60min; then keeping the pressure at 15-20MPa and the temperature at 130-140 ℃ at 1-1.5 h.
18. Use of the stealth ballistic resistant material according to any one of claims 1-13 as a protective material for military vehicles, aircraft or detectors.
CN201910351838.8A 2019-04-28 2019-04-28 Stealth bulletproof material and preparation method and application thereof Active CN111854533B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910351838.8A CN111854533B (en) 2019-04-28 2019-04-28 Stealth bulletproof material and preparation method and application thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910351838.8A CN111854533B (en) 2019-04-28 2019-04-28 Stealth bulletproof material and preparation method and application thereof

Publications (2)

Publication Number Publication Date
CN111854533A CN111854533A (en) 2020-10-30
CN111854533B true CN111854533B (en) 2024-01-02

Family

ID=72965218

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910351838.8A Active CN111854533B (en) 2019-04-28 2019-04-28 Stealth bulletproof material and preparation method and application thereof

Country Status (1)

Country Link
CN (1) CN111854533B (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4726980A (en) * 1986-03-18 1988-02-23 Nippon Carbon Co., Ltd. Electromagnetic wave absorbers of silicon carbide fibers
CN102717540A (en) * 2012-06-06 2012-10-10 电子科技大学 Low-frequency broadband electromagnetic wave absorbing structure
CN103249290A (en) * 2013-05-13 2013-08-14 电子科技大学 Single-layered composite element wideband periodic wave-absorbing structure
CN104325737A (en) * 2013-07-22 2015-02-04 深圳光启创新技术有限公司 Wave absorbing structure and manufacturing method thereof
CN104582458A (en) * 2013-10-29 2015-04-29 深圳光启创新技术有限公司 Wave absorbing metamaterial
CN104763100A (en) * 2015-03-06 2015-07-08 中国人民解放军国防科学技术大学 A shelter large plate having a radar stealth function and a bulletproof function and a preparing method thereof
CN106626619A (en) * 2016-12-07 2017-05-10 中国航空工业集团公司北京航空材料研究院 Microwave-absorbing composite material loaded with round patch metamaterial
CN107555940A (en) * 2017-09-30 2018-01-09 中国人民解放军国防科技大学 Broadband wave-absorbing heat-insulation stealth composite material and preparation method thereof
CN108705819A (en) * 2017-12-29 2018-10-26 天诺光电材料股份有限公司 Anti- bullet/absorbent structure integrated composite and preparation method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN209978724U (en) * 2019-04-28 2020-01-21 东莞天卫电磁技术有限公司 Stealthy bulletproof plate

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4726980A (en) * 1986-03-18 1988-02-23 Nippon Carbon Co., Ltd. Electromagnetic wave absorbers of silicon carbide fibers
CN102717540A (en) * 2012-06-06 2012-10-10 电子科技大学 Low-frequency broadband electromagnetic wave absorbing structure
CN103249290A (en) * 2013-05-13 2013-08-14 电子科技大学 Single-layered composite element wideband periodic wave-absorbing structure
CN104325737A (en) * 2013-07-22 2015-02-04 深圳光启创新技术有限公司 Wave absorbing structure and manufacturing method thereof
CN104582458A (en) * 2013-10-29 2015-04-29 深圳光启创新技术有限公司 Wave absorbing metamaterial
CN104763100A (en) * 2015-03-06 2015-07-08 中国人民解放军国防科学技术大学 A shelter large plate having a radar stealth function and a bulletproof function and a preparing method thereof
CN106626619A (en) * 2016-12-07 2017-05-10 中国航空工业集团公司北京航空材料研究院 Microwave-absorbing composite material loaded with round patch metamaterial
CN107555940A (en) * 2017-09-30 2018-01-09 中国人民解放军国防科技大学 Broadband wave-absorbing heat-insulation stealth composite material and preparation method thereof
CN108705819A (en) * 2017-12-29 2018-10-26 天诺光电材料股份有限公司 Anti- bullet/absorbent structure integrated composite and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
隐身防护多功能树脂基包装复合材料研究进展;王建;张小华;;包装工程;第30卷(第09期);118-119,137 *

Also Published As

Publication number Publication date
CN111854533A (en) 2020-10-30

Similar Documents

Publication Publication Date Title
US10153546B2 (en) Composite antiballistic radome walls and methods of making the same
EP2906902B1 (en) Composite antiballistic radome walls
US10290935B2 (en) Low loss tri-band protective armor radome
CN112549665A (en) Radar-infrared-visible light multi-spectrum camouflage stealth structure and preparation method thereof
CN108481756B (en) In-plane quasi-isotropic structure-stealth composite material and preparation method thereof
US20130040098A1 (en) Benzoxazine structures
KR101901094B1 (en) Radar absorbing composite sheet for high temperature and articles comprising the same
CN108705819A (en) Anti- bullet/absorbent structure integrated composite and preparation method thereof
CN111854532B (en) Stealth bulletproof material and preparation method and application thereof
CN210123261U (en) Stealthy bulletproof plate
CN111186190A (en) Double-layer skin wave-absorbing foam sandwich structure and preparation method thereof
CN111854533B (en) Stealth bulletproof material and preparation method and application thereof
CN209978724U (en) Stealthy bulletproof plate
CN111086301A (en) Superstructure honeycomb composite wave-absorbing material
CN112757713B (en) Multifunctional protection and multi-spectrum stealth structure and preparation method thereof
US20210119343A1 (en) Capacitive stealth composite structure
CN116826390A (en) Ultra-wideband large-angle-domain metamaterial wave absorber
CN108638619B (en) Impact-resistant electromagnetic shielding laminated board and preparation method and application thereof
KR102312947B1 (en) 3 dimensional structure comprising multi-layer radio wave absorber and manufacturing method of the same
CN215040968U (en) Structure/stealth integrated composite material and aircraft skin or ship deck structure
CN113696567A (en) High-temperature-resistant broadband wave-absorbing/bearing composite material and preparation method thereof
CN115742502B (en) Forming method of wave-absorbing/bearing composite material multi-stage honeycomb structure
CN113927984B (en) Impact-resistant honeycomb interlayer wave-absorbing material and preparation method thereof
CN114851654B (en) Fiber resin metamaterial with integrated high-speed impact resistance and wave absorbing function based on chopped fiber hybrid felt and preparation method thereof
Zhang et al. Design of Stealth Bulletproof Material Based on Sub-Wavelength Absorbing Structure

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant