CN1118517A - 用含酸流体处理半导体材料的方法 - Google Patents
用含酸流体处理半导体材料的方法 Download PDFInfo
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- CN1118517A CN1118517A CN95104759A CN95104759A CN1118517A CN 1118517 A CN1118517 A CN 1118517A CN 95104759 A CN95104759 A CN 95104759A CN 95104759 A CN95104759 A CN 95104759A CN 1118517 A CN1118517 A CN 1118517A
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- China
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- semi
- conducting material
- phosphorus pentoxide
- acid
- etchant
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000012530 fluid Substances 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 title claims abstract description 9
- 239000002253 acid Substances 0.000 title abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 23
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 2
- 239000007800 oxidant agent Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
本发明涉及一种用含酸流体处理半导体材料的方法,其中水作为化学反应的产物形成。在对半导体材料的处理之前和/或处理过程中,向含酸流体中加入五氧化二磷。
Description
本发明涉及用含酸流体处理半导体材料的方法,其中,作为化学反应产物而形成了水。
在提供能制造电子元件的合适的基质材料时,通常要对其进行一些加工处理,在处理过程中,需要用含酸流体对半导体材料进行处理。这些处理的目的可能是各种各样的。例如,这些处理的目的可以是分析半导体材料的晶体结构,或者是除去晶体中的缺陷部分。它们也可以用来除去半导体材料表面的杂质或者是除去与表面紧邻的层,这些层的晶体结构由于机械作用而受到了破坏。用含酸流体对半导体材料进行处理的一个进一步的目的是提供半导体晶片,其侧表面经酸蚀后是完全平滑的。
要达到所述的目的,所使用的含酸流体必须能够化学溶解所述的半导体材料。一般来说,形成了水,尤其是在该处理过程中水作化学反应的产物而形成。所形成的水在该含酸流体中积累,并对对半导体材料的进一步处理进程产生影响。通常的情况是,材料的移去速度降低,使得需要更长的处理时间或者是所使用的处理流体的更换速度要加快,在这两种情况下,制造成本都升高。含酸流体中水含量的增加,可能会对半导体晶片的处理结果产生不利的影响。例如,如果检验用含氢氟酸和硝酸的流体处理过的硅晶片的侧表面,可以发现其残余粗糙度与处理介质中的水含量相关。水含量越高而其它条件相同的条件下,硅晶片的侧表面的残余粗糙度也就越高。
因此,本发明的目的是提供一种能克服上述的缺点的方法。
本发明的目的是通过下述方法而实现的:一种用含酸流体处理半导体材料的方法,水作为化学反应的产物而形成,该方法包括向含酸流体中加入五氧化二磷。五氧化二磷可以在对半导体材料的处理进行之前和/或进行过程中加入。
本发明范围内,术语“对半导体材料的处理”应该理解为使半导体材料与含酸流体接触。这一过程可以通过将半导体材料浸入到含酸流体中或是将其用含酸流体喷洗来完成。
一般来说,希望而且需要含酸流体(下文中称作“浸蚀剂”)中的水含量尽可能地低,以使得对待半处理的半导体材料的浸蚀达到满意的程度。为此,浸蚀剂中的可接受的最高的水含量为20%(重量)。浸蚀剂中五氧化二磷的加入首先可以确保在对半导体材料的处理过程中,浸蚀剂的水含量不会超过20%(重量)。其次,已经发现,由水和五氧化二磷的化学反应所生成的磷酸有利于浸蚀剂的流动并起到增强使表面平滑的作用。
此外,在制备浸蚀剂时,通常有利的是不使用浓酸,而是使用其更容易处理的水溶液。在此情况下,在进行对半导体材料的处理之前,可以通过加入五氧化二磷而使浸蚀剂的水含量达到所希望的值。该值也可能比将水含量最低时的各单一组分混合而得到的浸蚀剂的水含量值还低。在对半导体材料的处理过程中,五氧化二磷的加入可以间歇进行也可连续进行。有利的是,加入到浸蚀剂中的五氧化二磷的用量至少是能与对半导体材料的处理过程中所产生的水相结合的量。加入的方式应该是其不影响对半导体材料的处理。例如,如果所加入的五氧化二磷沉积在半导体材料上,则影响了对半导体材料的处理。这种影响,例如,可以将一部分浸蚀剂取出并与五氧化二磷混合,此时形成了磷酸。然后将该混合物加入到留下的正进行对半导体材料的处理的那部分浸蚀剂中。
该方法可用于任何处理半导体材料并形成水的含酸流体中。优选是用于水含量低、含有氢氟酸以及至少一种能氧化待处理的半导体材料的试剂的浸蚀剂中。特别优选的是用于水含量低、以氢氟酸和硝酸为基础的浸蚀剂中。该浸蚀剂也可含有一种或多种其他的组分,这些组分优选是从由乙酸、氟化铵水溶液、硫酸、氢氯酸以及磷酸组成的一组物质中选择。
浸蚀剂中五氧化二磷的加入特别适合对硅进行湿化学处理。但是,本发明的方法也能有利地用于对其他的元素半导体如锗,或化合物半导体如砷化镓进行处理。本发明方法的优点是非常突出的,特别是在对硅晶片进行浸蚀时尤其如此,这被叫做“化学抛光”。浸蚀剂中五氧化二磷的加入很明显地改进了浸蚀后的晶片的几何对称性和其侧表面的平滑性。此外,按照本发明,在对由半导体材料组成的晶片、碎块、颗粒以及其他形状的制品进行处理时,很明显的是,可以使得浸蚀剂的使用周期延长,工厂的处理能力增加,并降低辅剂成本。
Claims (5)
1、一种用含酸流体处理半导体材料的方法,水作为化学反应的产物而形成,该方法包括:向含酸流体中加入五氧化二磷。
2、如权利要求1所述的方法,其中,在进行对半导体材料的处理之前向浸蚀剂中加入五氧化二磷。
3、如权利要求1所述的方法,其中,在对半导体材料的处理过程中向浸蚀剂中加入五氧化二磷,并且是以间歇或连续的方式加入的。
4、如权利要求1-3任一项所述的方法,其中,五氧化二磷的加入使得含酸流体的水含量低于20%(重量)。
5、如权利要求1-4任一项所述的方法,其中,所述的含酸流体含有水、氢氟酸和一种氧化剂以及,如果需要的话,还含有一种或多种其他组分,这些组分是从由乙酸、氟化铵水溶液、硫酸、氢氯酸和磷酸组成的一组物质中选择的。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEP4414925.5 | 1994-04-28 | ||
DE4414925A DE4414925A1 (de) | 1994-04-28 | 1994-04-28 | Verfahren zur Behandlung von Halbleitermaterial mit einer säurehaltigen Flüssigkeit |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1118517A true CN1118517A (zh) | 1996-03-13 |
Family
ID=6516731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN95104759A Pending CN1118517A (zh) | 1994-04-28 | 1995-04-22 | 用含酸流体处理半导体材料的方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5587046A (zh) |
EP (1) | EP0681318B1 (zh) |
JP (1) | JP2700778B2 (zh) |
KR (1) | KR0165730B1 (zh) |
CN (1) | CN1118517A (zh) |
DE (2) | DE4414925A1 (zh) |
TW (1) | TW284902B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3772456B2 (ja) * | 1997-04-23 | 2006-05-10 | 三菱電機株式会社 | 太陽電池及びその製造方法、半導体製造装置 |
JP3337622B2 (ja) | 1997-07-16 | 2002-10-21 | 松下電器産業株式会社 | 選択的エッチング液及びそのエッチング液を用いた半導体装置の製造方法 |
DE19962136A1 (de) | 1999-12-22 | 2001-06-28 | Merck Patent Gmbh | Verfahren zur Rauhätzung von Siliziumsolarzellen |
DE102007061687B4 (de) * | 2007-12-19 | 2010-04-29 | Cpi Chemiepark Institut Gmbh | Verfahren zum Mattierungsätzen von Siliziumsubstraten und Ätzmischung zur Durchführung des Verfahrens |
US8940178B2 (en) | 2009-03-18 | 2015-01-27 | E I Du Pont De Nemours And Company | Textured silicon substrate and method |
US8182698B2 (en) * | 2010-06-30 | 2012-05-22 | Arr-Maz Custom Chemicals, Inc. | Method for improving gypsum/phosphoric acid slurry filtration using carboxymethyl cellulose |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2425684A1 (de) * | 1974-05-28 | 1975-12-11 | Ibm Deutschland | Verfahren zum aetzen von silicium enthaltenden materialien |
US3923567A (en) * | 1974-08-09 | 1975-12-02 | Silicon Materials Inc | Method of reclaiming a semiconductor wafer |
JPS55154452A (en) * | 1979-05-18 | 1980-12-02 | Seiko Kakoki Kk | Concentration controlling method of halogen acid salt |
-
1994
- 1994-04-28 DE DE4414925A patent/DE4414925A1/de not_active Withdrawn
-
1995
- 1995-04-10 US US08/419,362 patent/US5587046A/en not_active Expired - Fee Related
- 1995-04-22 CN CN95104759A patent/CN1118517A/zh active Pending
- 1995-04-25 TW TW084104098A patent/TW284902B/zh active
- 1995-04-27 EP EP95106337A patent/EP0681318B1/de not_active Expired - Lifetime
- 1995-04-27 KR KR1019950010145A patent/KR0165730B1/ko not_active IP Right Cessation
- 1995-04-27 DE DE59500050T patent/DE59500050D1/de not_active Expired - Fee Related
- 1995-04-28 JP JP7127490A patent/JP2700778B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE59500050D1 (de) | 1997-01-09 |
EP0681318A1 (de) | 1995-11-08 |
TW284902B (zh) | 1996-09-01 |
EP0681318B1 (de) | 1996-11-27 |
KR0165730B1 (ko) | 1999-02-01 |
JPH0853780A (ja) | 1996-02-27 |
KR950030256A (ko) | 1995-11-24 |
US5587046A (en) | 1996-12-24 |
DE4414925A1 (de) | 1995-11-02 |
JP2700778B2 (ja) | 1998-01-21 |
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