CN111850673A - Gas stirring device, ingot furnace and using method thereof - Google Patents
Gas stirring device, ingot furnace and using method thereof Download PDFInfo
- Publication number
- CN111850673A CN111850673A CN202010729530.5A CN202010729530A CN111850673A CN 111850673 A CN111850673 A CN 111850673A CN 202010729530 A CN202010729530 A CN 202010729530A CN 111850673 A CN111850673 A CN 111850673A
- Authority
- CN
- China
- Prior art keywords
- inlet pipe
- air inlet
- gas
- ingot furnace
- air
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000003756 stirring Methods 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 53
- 239000010703 silicon Substances 0.000 claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000007788 liquid Substances 0.000 claims abstract description 47
- 239000007921 spray Substances 0.000 claims abstract description 32
- 238000007789 sealing Methods 0.000 claims abstract description 23
- 238000002955 isolation Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 54
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 20
- 229910052786 argon Inorganic materials 0.000 claims description 20
- 229910002804 graphite Inorganic materials 0.000 claims description 20
- 239000010439 graphite Substances 0.000 claims description 20
- 238000009413 insulation Methods 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- 230000033001 locomotion Effects 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 239000012535 impurity Substances 0.000 abstract description 5
- 239000002210 silicon-based material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F33/00—Other mixers; Mixing plants; Combinations of mixers
- B01F33/40—Mixers using gas or liquid agitation, e.g. with air supply tubes
- B01F33/403—Mixers using gas or liquid agitation, e.g. with air supply tubes for mixing liquids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F33/00—Other mixers; Mixing plants; Combinations of mixers
- B01F33/40—Mixers using gas or liquid agitation, e.g. with air supply tubes
- B01F33/4094—Plants
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention discloses a gas stirring device, an ingot furnace and a using method of the ingot furnace, wherein the gas stirring device comprises a lifting unit, a gas inlet pipe, a sealing unit and a spray head; the air inlet pipe is connected with the lifting unit and is driven by the lifting unit to move up and down; the air inlet pipe is also provided with an air inlet; the sealing unit is connected with the air inlet pipe and is used for connecting the ingot furnace so as to realize the isolation of the gas in the ingot furnace from the outside; the sprayer is connected with the outlet of the air inlet pipe, an included angle exists between the extending direction of the air outlet nozzle of the sprayer and the extending direction of the air inlet pipe, and the air flow sprayed by the sprayer pushes the silicon liquid in the ingot furnace to flow. According to the invention, through forming the flow of the silicon liquid, the impurities in the silicon liquid can be moved up to the surface and the side part of the silicon ingot, and the product quality is improved.
Description
Technical Field
The invention particularly relates to a gas stirring device, an ingot furnace and a using method thereof, which are suitable for production of ingot production equipment or other vacuum smelting furnaces in the photovoltaic industry.
Background
In the production process of the photovoltaic industry, a crystal silicon ingot furnace is an important production device for producing silicon wafers. Some impurities are inevitably introduced in the production process of the crystalline silicon ingot, such as: oxygen, carbon, silicon nitride, etc., which form precipitates, complexes, etc. in the silicon solution, and become recombination centers of minority carriers, affecting the minority carrier lifetime of the silicon wafer, thereby reducing the conversion efficiency of the crystalline silicon solar cell. In addition, because no stirring device is arranged in the existing crystal silicon ingot furnace equipment, the silicon liquid can only be driven to flow a small amount by the temperature difference distribution generated by the thermal field temperature gradient on the silicon liquid after being melted, the flow is very limited relative to the total amount of the silicon liquid, so that impurities in the silicon liquid cannot drift to the upper surface or the edge of a silicon ingot to grow in the middle position of a crystal, and the crystal yield is certainly influenced.
Disclosure of Invention
Aiming at the problems, the invention provides the gas stirring device, the ingot furnace and the using method thereof, which are beneficial to realizing the upward movement of impurities in the silicon liquid to the surface and the side part of the silicon ingot and improving the product quality by forming the flow of the silicon liquid.
In order to achieve the technical purpose and achieve the technical effects, the invention is realized by the following technical scheme:
in a first aspect, the present invention provides a gas stirring apparatus comprising:
a lifting unit;
the air inlet pipe is connected with the lifting unit and is driven by the lifting unit to move up and down; the air inlet pipe is also provided with an air inlet;
the sealing unit is connected with the air inlet pipe and is used for connecting the ingot furnace so as to realize the isolation of the gas in the ingot furnace from the outside;
and the spray head is connected with the outlet of the air inlet pipe, an included angle exists between the extending direction of the air outlet nozzle of the spray head and the extending direction of the air inlet pipe, and the air flow sprayed by the spray head pushes the silicon liquid in the ingot furnace to flow.
Optionally, the diameter of the inner cavity of the air outlet nozzle is gradually reduced along the extension direction of the air outlet nozzle, so as to increase the flow speed of the air flow.
Optionally, the sealing unit is a sealing ring or a vacuum bellows.
Optionally, the inlet tube is made of stainless steel, alumina, silicon carbide or quartz glass.
In a second aspect, the invention provides an ingot furnace, which comprises an ingot furnace body, wherein the ingot furnace body comprises a furnace body, a cover body, a heat insulation cage, a graphite guide pipe, a heater and a crucible; the cover body covers the opening of the furnace body, and a notch is formed in the cover body; the heat insulation cage is arranged in the furnace body; one end of the graphite conduit is communicated with the notch at the cover body, and the other end of the graphite conduit is communicated with the heat insulation cage; the heater and the crucible are arranged in the heat insulation cage; a notch is arranged on the crucible; still include gaseous agitating unit, include:
the lifting unit is connected with the furnace body;
one end of the air inlet pipe penetrates through the graphite guide pipe and then enters the crucible through a notch on the crucible, and the other end of the air inlet pipe is connected with the lifting unit and is driven by the lifting unit to do lifting motion in the furnace body; the air inlet pipe is also provided with an air inlet;
the sealing unit is respectively connected with the gas inlet pipe and the furnace body so as to realize the isolation of the gas in the furnace body from the outside;
and the spray head is connected with the outlet of the air inlet pipe, an included angle exists between the extending direction of the air outlet nozzle of the spray head and the extending direction of the air inlet pipe, and the air flow sprayed by the spray head pushes the silicon liquid in the ingot furnace to flow.
Optionally, the sealing unit is a sealing ring or a vacuum bellows.
Optionally, the inlet tube is made of stainless steel, alumina, silicon carbide or quartz glass.
Optionally, the diameter of the inner cavity of the air outlet nozzle is gradually reduced along the extension direction of the air outlet nozzle, so as to increase the flow speed of the air flow.
In a third aspect, the present invention provides a method for using an ingot furnace according to any one of the second aspects, including:
the air inlet pipe is driven to move upwards by using the lifting unit until the spray head completely enters the graphite guide pipe;
introducing argon from an air inlet pipe, enabling the ingot furnace to work in a gas mode, and starting a heater to run;
when the temperature in the stove reaches preset temperature, and the silicon liquid level in the crucible drops to minimum liquid level, utilize the lift unit drive intake pipe to move down, make the shower nozzle get into in the crucible, and keep predetermined distance with the silicon liquid level, adjust the argon gas flow to suitable size, inside argon gas process intake pipe and shower nozzle entering crucible, the argon gas air current that the shower nozzle erupted will promote the silicon liquid and form and flow, simultaneously because the argon gas air current is normal atmospheric temperature gas, form certain difference in temperature from top to bottom at the silicon liquid, utilize the difference in temperature to make the silicon liquid form and flow.
Optionally, the method further comprises: and after the crystal growth process of the ingot furnace is finished, the air inlet pipe is driven to move upwards by the lifting unit, and the spray head is moved into the graphite guide pipe.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a novel gas stirring device, which is used for being matched with an ingot furnace, and is provided with a spray head with an included angle with an air inlet pipe, wherein the airflow sprayed by the spray head pushes silicon liquid in the ingot furnace to flow, so that the airflow is accelerated to form a spraying effect, meanwhile, the airflow forms a certain temperature difference between the upper part and the lower part of the silicon liquid due to the fact that the airflow is normal-temperature gas, the temperature difference can also enable the silicon liquid to flow, the flowing of the silicon liquid is beneficial to the impurities in the silicon liquid to move upwards to the surface and the lateral part of a silicon ingot, and the purpose of improving the product quality is achieved.
Drawings
In order that the present disclosure may be more readily and clearly understood, reference is now made to the following detailed description of the present disclosure taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic overall structure diagram of an ingot furnace according to an embodiment of the invention;
FIG. 2 is a schematic structural diagram of a showerhead according to an embodiment of the present invention
FIG. 3 is a schematic diagram illustrating the effect that the gas flow ejected by the nozzle of one embodiment of the present invention will push the silicon liquid in the ingot furnace to flow;
wherein:
1-lifting unit, 2-air inlet pipe, 3-sealing unit, 4-spray head, 5-furnace body, 6-cover body, 7-heat insulation cage, 8-heater, 9-crucible, 10-graphite conduit, 11-air inlet, 12-silicon liquid level, 13-angle between nozzle outlet and horizontal silicon liquid level, and 14-DS block.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the scope of the invention.
In the description of the present patent, it is to be noted that the terms "upper", "lower", "left", "right", "horizontal", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present patent and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present patent.
In the description of the present patent application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
The following detailed description of the principles of the invention is provided in connection with the accompanying drawings.
Example 1
An embodiment of the present invention provides a gas stirring apparatus, as shown in fig. 1, including:
the lifting unit 1 in the embodiment of the present invention is to drive the air inlet pipe 2 to move up and down, so as long as the lifting unit 1 capable of satisfying the function can be applied to the gas stirring apparatus in the embodiment of the present invention, and since the structure of the lifting unit 1 can be implemented by using the prior art, redundant description is not repeated in the present invention;
the air inlet pipe 2 is connected with the lifting unit 1 and is driven by the lifting unit 1 to move up and down; the air inlet pipe 2 is also provided with an air inlet 11; in the implementation process of the present invention, the air inlet pipe 2 may be arranged in an L shape;
the sealing unit 3 is connected with the air inlet pipe 2 and is used for connecting the ingot furnace so as to isolate the gas in the ingot furnace from the outside;
and the spray head 4 is connected with the outlet of the air inlet pipe 2, an included angle exists between the extending direction of the air outlet nozzle of the spray head 4 and the extending direction of the air inlet pipe 2, and the air flow sprayed by the spray head 4 pushes the silicon liquid in the ingot furnace to flow.
In a specific implementation manner of the embodiment of the present invention, the diameter of the inner cavity of the air outlet nozzle is gradually reduced along the extending direction of the air outlet nozzle, so as to increase the flow velocity of the air flow and enhance the stirring effect.
In one specific implementation manner of the embodiment of the present invention, the sealing unit 3 is a sealing ring, and in another specific implementation manner of the embodiment of the present invention, the sealing unit 3 is a vacuum bellows.
In one specific implementation mode of the embodiment of the present invention, the material of the gas inlet pipe 2 is made of stainless steel, and in other specific implementation modes of the embodiment of the present invention, the material of the gas inlet pipe 2 is alumina, silicon carbide or quartz glass.
Example 2
The embodiment of the invention provides an ingot furnace, which comprises an ingot furnace body, wherein the ingot furnace body comprises a furnace body 5, a cover body 6, a heat insulation cage 7, a graphite guide pipe 10, a heater 8 and a crucible 9; the cover body 6 covers the opening of the furnace body 5, and a notch is arranged on the cover body 6; the heat insulation cage 7 is arranged in the furnace body 5; one end of the graphite conduit 10 is communicated with the gap at the cover body 6, and the other end is communicated with the heat insulation cage 7; the heater 8 and the crucible 9 are arranged in the heat insulation cage; a notch is arranged on the crucible 9, and a DS block 14 is arranged at the bottom of the crucible; still include gaseous agitating unit, include:
the lifting unit 1 is connected with the furnace body 5; specifically, the lifting unit 1 may be fixed on the cover 6 by bolts, welding, or the like;
one end of the air inlet pipe 2 penetrates through the graphite guide pipe 10 and then enters the crucible 9 through a notch on the crucible, and the other end of the air inlet pipe is connected with the lifting unit 1 and is driven by the lifting unit 1 to do lifting motion in the furnace body 5; the air inlet pipe 2 is also provided with an air inlet 11;
the sealing unit 3 is respectively connected with the gas inlet pipe 2 and the furnace body 5 so as to realize the isolation of the gas in the furnace body 5 from the outside;
and the spray head 4 is connected with the outlet of the air inlet pipe 2, and an included angle is formed between the extending direction of the air outlet nozzle of the spray head 4 and the extending direction of the air inlet pipe 2.
In one specific implementation manner of the embodiment of the present invention, the sealing unit 3 is a sealing ring, and in another specific implementation manner of the embodiment of the present invention, the sealing unit 3 is a vacuum bellows.
In one specific implementation mode of the embodiment of the present invention, the material of the gas inlet pipe 2 is made of stainless steel, and in other specific implementation modes of the embodiment of the present invention, the material of the gas inlet pipe 2 is alumina, silicon carbide or quartz glass.
In a specific implementation manner of the embodiment of the present invention, the diameter of the inner cavity of the air outlet nozzle is gradually reduced along the extending direction of the air outlet nozzle, so as to increase the flow rate of the air flow and further improve the product quality.
Example 3
An embodiment of the present invention provides a method for using an ingot furnace according to any one of embodiments 2, including:
the air inlet pipe 2 is driven to move upwards by the lifting unit 1 until the spray head 4 completely enters the graphite guide pipe 10;
introducing argon from the gas inlet pipe 2, enabling the ingot furnace to work in a gas mode, and starting the heater 8 to run;
when the temperature reaches preset temperature in the stove, and when the silicon liquid level in crucible 9 dropped to minimum liquid level, utilize lifting unit 1 drive intake pipe 2 to move down, make shower nozzle 4 get into crucible 9 in, and keep predetermined distance with the silicon liquid level, adjust the argon gas flow to suitable size, argon gas gets into crucible 9 with shower nozzle 4 after through intake pipe 2 inside, the argon gas air current that shower nozzle 4 erupted will promote the silicon liquid and form and flow, simultaneously because the argon gas air current is normal atmospheric temperature gas, form certain difference in temperature from top to bottom at the silicon liquid, utilize the difference in temperature to make the silicon liquid form and flow.
The method further comprises the following steps: after the crystal growth process of the ingot furnace is finished, the air inlet pipe 2 is driven to move upwards by the lifting unit 1, and the spray head 4 is moved into the graphite guide pipe 10.
The methods of the examples of the present invention are described in detail below with reference to a specific implementation.
The furnace body 5 of the ingot furnace is divided into an upper furnace body 5 and a lower furnace body 5, the lower furnace body 5 is descended and is filled into a crucible 9 filled with polycrystalline silicon material, and the polycrystalline silicon material is higher in the crucible 9 because the density of the stacked polycrystalline silicon material before being melted is lower, and the height of the stacked silicon material is generally close to the upper edge of the crucible 9. In order to prevent the nozzle 4 from contacting the silicon material, the gas inlet pipe 2 is moved upwards before being filled into the crucible 9 until the nozzle 4 completely enters the graphite guide pipe 10, and the normal ingot casting process can be carried out. The equipment starts to operate according to a preset formula program, and comprises the following steps: vacuumizing and detecting leakage; and when the leakage detection is qualified, the method enters a second step: introducing argon from the gas inlet pipe 2, enabling the equipment to work in a gas mode and starting to perform power-on heating operation; when the program formulation reaches the later stage of the third melting, the temperature in the furnace reaches about 1500 ℃, the polycrystalline silicon material is basically completely melted, the silicon liquid level 12 in the crucible 9 is lowered to the lowest liquid level, at the moment, the gas inlet pipe 2 is moved downwards, the spray head 4 enters the crucible 9 and keeps about 40-100mm with the silicon liquid level 12, the argon flow is adjusted to a proper size, the argon passes through the gas inlet pipe 2 and enters the crucible 9 together with the spray head 4, the nozzle outlet of the spray head 4 is designed to have a certain angle 13 (shown in figure 3) with the horizontal silicon liquid level 12, meanwhile, the inside of the spray head 4 is designed to be reduced from large diameter to small diameter in transition (shown in figure 2), the air flow is accelerated to form a spraying effect, the argon flow of the argon gas pushes the silicon liquid to form a flow, meanwhile, the air flow forms a certain temperature difference above and below the silicon liquid because the air flow forms a certain temperature difference above and below the silicon liquid, the purpose of improving the product quality is achieved. The gas stirring process is carried out from the highest melting temperature until the whole crystal growth is finished; when the formula enters an annealing procedure, the air inlet pipe 2 is moved upwards, the spray head 4 is moved into the graphite guide pipe 10, so that the silicon ingot is not influenced by air flow during annealing and cooling, and the temperature is kept uniform; the whole process is finished.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. A gas stirring device, comprising:
a lifting unit;
the air inlet pipe is connected with the lifting unit and is driven by the lifting unit to move up and down; the air inlet pipe is also provided with an air inlet;
the sealing unit is connected with the air inlet pipe and is used for connecting the ingot furnace so as to realize the isolation of the gas in the ingot furnace from the outside;
and the spray head is connected with the outlet of the air inlet pipe, an included angle exists between the extending direction of the air outlet nozzle of the spray head and the extending direction of the air inlet pipe, and the air flow sprayed by the spray head pushes the silicon liquid in the ingot furnace to flow.
2. A gas stirring device as claimed in claim 1, wherein: the diameter of the inner cavity of the air outlet nozzle is gradually reduced along the extension direction of the air outlet nozzle, and the diameter is used for increasing the flow velocity of the air flow.
3. A gas stirring device as claimed in claim 1, wherein: the sealing unit is a sealing ring or a vacuum corrugated pipe.
4. A gas stirring device as claimed in claim 1, wherein: the gas inlet pipe is made of stainless steel, aluminum oxide, silicon carbide or quartz glass.
5. The ingot furnace comprises an ingot furnace body, wherein the ingot furnace body comprises a furnace body, a cover body, a heat insulation cage, a graphite guide pipe, a heater and a crucible; the cover body covers the opening of the furnace body, and a notch is formed in the cover body; the heat insulation cage is arranged in the furnace body; one end of the graphite conduit is communicated with the notch at the cover body, and the other end of the graphite conduit is communicated with the heat insulation cage; the heater and the crucible are arranged in the heat insulation cage; a notch is arranged on the crucible; the method is characterized in that: still include gaseous agitating unit, include:
the lifting unit is connected with the furnace body;
one end of the air inlet pipe penetrates through the graphite guide pipe and then enters the crucible through a notch on the crucible, and the other end of the air inlet pipe is connected with the lifting unit and is driven by the lifting unit to do lifting motion in the furnace body; the air inlet pipe is also provided with an air inlet;
the sealing unit is respectively connected with the gas inlet pipe and the furnace body so as to realize the isolation of the gas in the furnace body from the outside;
and the spray head is connected with the outlet of the air inlet pipe, an included angle exists between the extending direction of the air outlet nozzle of the spray head and the extending direction of the air inlet pipe, and the air flow sprayed by the spray head pushes the silicon liquid in the ingot furnace to flow.
6. The ingot furnace of claim 5, wherein: the sealing unit is a sealing ring or a vacuum corrugated pipe.
7. The ingot furnace of claim 5, wherein: the gas inlet pipe is made of stainless steel, aluminum oxide, silicon carbide or quartz glass.
8. The ingot furnace of claim 5, wherein: the diameter of the inner cavity of the air outlet nozzle is gradually reduced along the extension direction of the air outlet nozzle, and the diameter is used for increasing the flow velocity of the air flow.
9. Use method of the ingot furnace of any one of claims 5 to 8, characterized by comprising:
the air inlet pipe is driven to move upwards by using the lifting unit until the spray head completely enters the graphite guide pipe;
introducing argon from an air inlet pipe, enabling the ingot furnace to work in a gas mode, and starting a heater to run;
when the temperature in the stove reaches preset temperature, and the silicon liquid level in the crucible drops to minimum liquid level, utilize the lift unit drive intake pipe to move down, make the shower nozzle get into in the crucible, and keep predetermined distance with the silicon liquid level, adjust the argon gas flow to suitable size, inside argon gas process intake pipe and shower nozzle entering crucible, the argon gas air current that the shower nozzle erupted will promote the silicon liquid and form and flow, simultaneously because the argon gas air current is normal atmospheric temperature gas, form certain difference in temperature from top to bottom at the silicon liquid, utilize the difference in temperature to make the silicon liquid form and flow.
10. The use method of the ingot furnace according to claim 9, characterized in that: the method further comprises the following steps: and after the crystal growth process of the ingot furnace is finished, the air inlet pipe is driven to move upwards by the lifting unit, and the spray head is moved into the graphite guide pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010729530.5A CN111850673A (en) | 2020-07-27 | 2020-07-27 | Gas stirring device, ingot furnace and using method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010729530.5A CN111850673A (en) | 2020-07-27 | 2020-07-27 | Gas stirring device, ingot furnace and using method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111850673A true CN111850673A (en) | 2020-10-30 |
Family
ID=72947158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010729530.5A Pending CN111850673A (en) | 2020-07-27 | 2020-07-27 | Gas stirring device, ingot furnace and using method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111850673A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201729910U (en) * | 2010-06-25 | 2011-02-02 | 绍兴县精功机电研究所有限公司 | Gas flow control device for polycrystalline silicon ingot production furnace |
| WO2012143867A1 (en) * | 2011-04-19 | 2012-10-26 | Rec Wafer Pte. Ltd. | An arrangement for manufacturing crystalline silicon ingots |
| CN103541003A (en) * | 2013-11-14 | 2014-01-29 | 乐山新天源太阳能科技有限公司 | Polysilicon ingot furnace |
| CN103556220A (en) * | 2013-11-14 | 2014-02-05 | 乐山新天源太阳能科技有限公司 | Polycrystalline silicon ingot furnace |
| CN203715787U (en) * | 2014-02-12 | 2014-07-16 | 江苏协鑫硅材料科技发展有限公司 | Fed foreign gas removal device and ingot furnace thereof |
| CN106757330A (en) * | 2016-12-14 | 2017-05-31 | 青岛美璞精工机械有限公司 | A kind of crucible furnace for preparing low-carbon (LC) hypoxemia silicon ingot |
| CN212404352U (en) * | 2020-07-27 | 2021-01-26 | 江苏协鑫硅材料科技发展有限公司 | Gas stirring device and ingot furnace |
-
2020
- 2020-07-27 CN CN202010729530.5A patent/CN111850673A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201729910U (en) * | 2010-06-25 | 2011-02-02 | 绍兴县精功机电研究所有限公司 | Gas flow control device for polycrystalline silicon ingot production furnace |
| WO2012143867A1 (en) * | 2011-04-19 | 2012-10-26 | Rec Wafer Pte. Ltd. | An arrangement for manufacturing crystalline silicon ingots |
| CN103541003A (en) * | 2013-11-14 | 2014-01-29 | 乐山新天源太阳能科技有限公司 | Polysilicon ingot furnace |
| CN103556220A (en) * | 2013-11-14 | 2014-02-05 | 乐山新天源太阳能科技有限公司 | Polycrystalline silicon ingot furnace |
| CN203715787U (en) * | 2014-02-12 | 2014-07-16 | 江苏协鑫硅材料科技发展有限公司 | Fed foreign gas removal device and ingot furnace thereof |
| CN106757330A (en) * | 2016-12-14 | 2017-05-31 | 青岛美璞精工机械有限公司 | A kind of crucible furnace for preparing low-carbon (LC) hypoxemia silicon ingot |
| CN212404352U (en) * | 2020-07-27 | 2021-01-26 | 江苏协鑫硅材料科技发展有限公司 | Gas stirring device and ingot furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8057598B2 (en) | Manufacturing equipment for polysilicon ingot | |
| KR100861412B1 (en) | Manufacturing equipment for poly silicon ingot | |
| CN101323978B (en) | Large size sapphire crystal preparing technology and growing apparatus thereof | |
| JP5719282B2 (en) | Method for producing polycrystalline silicon | |
| CN105603520B (en) | A kind of high speed single-crystal growing apparatus and method | |
| CN107541776A (en) | A kind of growth apparatus and method of large scale gallium oxide single crystal | |
| CN107217296B (en) | A kind of silicon wafer horizontal growth apparatus and method | |
| CN103184514B (en) | crystal growing furnace | |
| CN103590103B (en) | A kind of polycrystalline silicon ingot or purifying furnace argon gas flow guide system and method for river diversion thereof | |
| KR101704147B1 (en) | Device for producing polycrystal silicon and method for producing polycrystal silicon | |
| CN201908153U (en) | Thermal field exhaust device of single crystal furnace | |
| CN212404352U (en) | Gas stirring device and ingot furnace | |
| CN203613302U (en) | Argon guide system for polycrystalline silicon ingot furnace | |
| CN212895088U (en) | System for synthesizing indium phosphide by liquid phosphorus injection method | |
| WO2021128643A1 (en) | Semiconductor silicon material consumable growth furnace and preparation method for silicon material | |
| CN100415945C (en) | Method of improving life of straight pulling silicon single crystal furnace thermal field component and single crystal furnace | |
| CN111041554B (en) | Carrier gas flow guiding device for crystal silicon ingot furnace and flow guiding method thereof | |
| CN111850673A (en) | Gas stirring device, ingot furnace and using method thereof | |
| CN113481590A (en) | Cooling screen for simultaneously drawing multiple silicon cores by using crushed silicon materials | |
| TWI625431B (en) | Method for producing single crystal germanium | |
| CN219099384U (en) | Silicon carbide crystal growth device | |
| CN202202015U (en) | Thermal filed with multiple downward exhaust pipelines distributed uniformly for direct-pulling silicon single crystal furnace | |
| CN211199471U (en) | G6 polycrystal ingot furnace | |
| CN211734524U (en) | Semiconductor silicon material consumable material growth furnace | |
| CN114540949A (en) | Germanium single crystal production apparatus and germanium single crystal production method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |