CN111847508B - In-based semiconductor material, preparation method and application - Google Patents
In-based semiconductor material, preparation method and application Download PDFInfo
- Publication number
- CN111847508B CN111847508B CN201910334098.7A CN201910334098A CN111847508B CN 111847508 B CN111847508 B CN 111847508B CN 201910334098 A CN201910334098 A CN 201910334098A CN 111847508 B CN111847508 B CN 111847508B
- Authority
- CN
- China
- Prior art keywords
- semiconductor material
- based semiconductor
- powder
- mgin
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title description 7
- 238000010521 absorption reaction Methods 0.000 claims abstract description 33
- 229910017911 MgIn Inorganic materials 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 22
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000000843 powder Substances 0.000 claims description 26
- 238000005245 sintering Methods 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 239000011941 photocatalyst Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 9
- 238000001228 spectrum Methods 0.000 abstract description 9
- 230000001699 photocatalysis Effects 0.000 abstract description 2
- 238000007146 photocatalysis Methods 0.000 abstract description 2
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000584 ultraviolet--visible--near infrared spectrum Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001778 solid-state sintering Methods 0.000 description 2
- 238000003775 Density Functional Theory Methods 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005314 correlation function Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G30/00—Compounds of antimony
- C01G30/002—Compounds containing, besides antimony, two or more other elements, with the exception of oxygen or hydrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to an In-based semiconductor material, which comprises MgIn 2‑x Sb x S 4 Wherein x is more than 0 and less than or equal to 0.1 and is atomic percent, and the In-based semiconductor material is ternary mixed sulfide. Compared with the prior art, the invention provides a new method for improving MgIn 2 S 4 The method of the optical absorption range of the semiconductor material successfully realizes the multi-energy bandwidth spectrum solar energy absorption, and the material component has potential application value in the fields of solar cells, photon up/down converters, photocatalysis and the like.
Description
Technical Field
The invention relates to the field of semiconductor materials, in particular to an In-based semiconductor material and a preparation method and application thereof.
Background
With the rapid development of economy, the living standard of people is continuously improved, and the growth speed of the energy demand is increased. In order to cope with the upcoming energy crisis, new energy is developed, and the utilization of renewable energy becomes a central focus of the current development. Solar energy is rapidly becoming the focus of new energy development and utilization due to its unique advantages. The solar energy reserves are abundant, clean, can develop and utilize on the spot, do not have the transportation problem. Today, the conversion of solar radiation into electrical energy by the photovoltaic effect of solar cell semiconductor materials is one of the most common ways to utilize solar energy. However, most solar absorption semiconductors have a very low energy utilization rate for solar radiation, and how to improve the utilization range of solar spectrum is one of the most major problems in the development of solar cells. For a traditional solar energy absorption semiconductor material, the forbidden bandwidth is a fixed value, and only photons with energy close to the forbidden bandwidth can excite electrons in the valence band to the conduction band to form electron-hole pairs, so that photogenerated current is generated. This results in that the general semiconductor material can only absorb the energy spectrum close to the forbidden bandwidth of the semiconductor material in the solar spectrum, which greatly limits the efficiency of the solar cell.
At present, the optical absorption efficiency of the solar cell absorption layer is low, mainly due to the traditional semiconductor material (such as MgIn) 2 S 4 Material) can only absorb photons near the bandgap, while some photons below the bandgap energy cannot be absorbed by the semiconductor, and photons above the bandgap are difficult to utilize. The shortage of the impurity-carrying semiconductor material and the preparation technology are not mature enough, and the series of problems lead to the development of the impurity-carrying semiconductor to be hindered.
CN109037373A discloses MgIn 2 S 4 The solar energy absorbing material with the base intermediate band and the preparation method thereof adopt a Sn doping method to increase an electronic light absorption path and enhance the light absorption capacity. However, in the specific application process, a small amount of elemental Sn always remains in the finished semiconductor material finally prepared by doping Sn, the elemental Sn has 3 allotropes, and when the working condition is below 13 ℃, the volume of tin suddenly expands, so that the whole finished semiconductor material cracks, and normal use is affected.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide an In-based semiconductor material, a preparation method and application thereof.
The purpose of the invention can be realized by the following technical scheme:
an In-based semiconductor material contains MgIn 2-x Sb x S 4 Wherein x is more than 0 and less than or equal to 0.1 and is atomic percent, and the In-based semiconductor material is ternary mixed sulfide.
Furthermore, the component of the In-based semiconductor material is MgIn 1.9 Sb 0.1 S 4 。
Further, sb In the In-based semiconductor material exists In a trivalent state.
Further, the solar energy absorption capacity of the In-based semiconductor material is In direct proportion to the atomic percent of Sb.
Further, the optical absorption band gap of the In-based semiconductor material is 2.28eV, see fig. 3.
The present invention is directed to MgIn 2 S 4 The problem of low optical absorption efficiency of semiconductor is that MgIn is doped by semiconductor doping technology 2 S 4 Semiconductor materials are being innovated. In the parent compound MgIn 2 S 4 The Sb element is doped, the composition of the Sb element is changed, and the energy band structure of the Sb element is regulated, so that the solar energy absorption capacity is effectively improved. The reinforced MgIn of the invention 2 S 4 The optical absorption method of the ternary compound is to induce the generation of an impurity energy band by using Sb, thereby realizing the broad spectrum absorption of the semiconductor material.
The In-based semiconductor material is applied to solar cells, photon up/down converters or photocatalysts.
The preparation method of the In-based semiconductor material comprises the following steps:
s1: grinding Mg powder, in particles, S powder and Sb blocks into powder according to the stoichiometric ratio, and then packaging the powder In a quartz glass tube In vacuum;
s2: placing the quartz tube in the S1 in a muffle furnace for sintering, wherein the sintering temperature is 600-700 ℃;
s3: and grinding the mixture into powder after sintering, packaging the powder In a quartz glass tube In vacuum, and repeating the S2 process to obtain the final In-based semiconductor material.
Furthermore, the sintering process comprises the steps of firstly programming the temperature to 600-700 ℃, then keeping the temperature within the range of 600-700 ℃ for 48-72 hours, and finally cooling to the room temperature.
Compared with the prior art, the invention provides a new method for improving MgIn 2 S 4 The method for adjusting the optical absorption range of the semiconductor material utilizes Sb element doping to regulate and control an energy band structure, enlarges the absorption range of the semiconductor material on a solar spectrum, successfully realizes the solar energy absorption of the multi-energy bandwidth spectrum, and the material component has potential application value in the fields of solar cells, photon up/down converters, photocatalysis and the like.
Sb element-doped MgIn on the other hand 2-x Sb x S 4 The semiconductor material avoids the condition of expansion and damage under different working conditions, and MgIn doped with Sn is realized 2 S 4 The same absorption range of the semiconductor makes the semiconductor material more stable.
Drawings
FIG. 1 shows MgIn 2-x Sb x S 4 XRD pattern of series (x =0,0.05,0.1) samples.
FIG. 2 is MgIn 2-x Sb x S 4 (x =0,0.05,0.1) series of UV-vis-NIR absorption spectra of samples.
FIG. 3 is MgIn 1.9 Sb 0.1 S 4 3d XPS spectra of Sb in the samples.
FIG. 4 is Sb-doped MgIn 2 S 4 Energy band structure.
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
The reinforced MgIn of the invention 2 S 4 The optical absorption method of the ternary compound is to induce the generation of an impurity energy band by using Sb, thereby realizing the broad spectrum absorption of the semiconductor material.
Example 1
In this embodiment, the material may be prepared by a vacuum solid state sintering reaction method, and the specific process is as follows:
s1: grinding Mg powder, in particles, S powder and Sb blocks into powder according to the atomic ratio of 1;
s2: placing the quartz tube in the S1 in a muffle furnace for sintering, wherein the sintering temperature is 600-700 ℃, the sintering process comprises the steps of firstly, programming the temperature to 600-700 ℃, then, keeping the temperature in the range of 600-700 ℃ for 48-72 hours, and finally, cooling to the room temperature;
s3: grinding the powder after sintering, packaging the powder In a quartz glass tube In vacuum, and repeating the S2 process to obtain the final In-based semiconductor material MgIn 1.95 Sb 0.05 S 4 。
The X-ray diffraction pattern of the material is measured by a Bruker D8ADVANCE X-ray diffractometer, cu Ka1 rays (0.15405 nm) are adopted, the scanning voltage is 40kV, and the scanning current is 40mA. Photoelectron spectroscopy was performed on ESCALAB 250 system and binding energy correction was performed on a C1s =284.6eV basis. The ultraviolet-visible-near infrared absorption spectrum of the material was measured on a Hitachi U4100UV-Vis-NIR spectrophotometer.
MgIn 1.95 Sb 0.05 S 4 (x = 0.05) the XRD pattern of the powder sample was consistent with that of a standard card (JCPDS # 31-0792) (fig. 1), indicating that the prepared sample was a single pure phase.
From MgIn 1.95 Sb 0.05 S 4 The UV-Vis-NIR absorption spectrum of the powder sample (FIG. 3) shows that a new absorption band appears due to the doping of Sb, in contrast to MgIn 2 S 4 The absorption range of the material is greatly expanded, and the gray background in figure 3 is AM 1.5G standard solar spectrum. The absorption curve for the Sb doped sample in the figure increases sharply starting at 1eV, with a first inflection point around 1.75eV, and then the absorption continues to increase, with a second absorption edge.
Example 2
In this embodiment, the material may be prepared by a vacuum solid state sintering reaction method, and the specific process is as follows:
s1: grinding Mg powder, in particles, S powder and Sb blocks into powder according to the atomic ratio of 1;
s2: placing the quartz tube in the S1 in a muffle furnace for sintering, wherein the sintering temperature is 600-700 ℃, the sintering process comprises the steps of firstly, programming the temperature to 600-700 ℃, then, keeping the temperature in the range of 600-700 ℃ for 48-72 hours, and finally, cooling to the room temperature;
s3: grinding into powder after sintering, vacuum packaging In quartz glass tube, repeating S2 process to obtain final In-based semiconductor material MgIn 1.9 Sb 0.1 S 4 。
MgIn 1.9 Sb 0.1 S 4 (x = 0.1) the XRD pattern of the powder sample was consistent with that of a standard card (JCPDS # 31-0792) (fig. 1), indicating that the prepared sample was a single pure phase.
For MgIn in this example 1.9 Sb 0.1 S 4 XPS analysis of the powder can conclude that Sb doping is present in the trivalent state, see figure 2.
From MgIn 1.9 Sb 0.1 S 4 As can be seen from the UV-Vis-NIR absorption spectrum (figure 3) of the powder sample, a new absorption band appears due to the doping of Sb, the absorption range of the material is greatly expanded, and the gray background is AM 1.5G standard solar spectrum. The absorption curve for the Sb-doped sample in the figure increases sharply starting at 1eV, with a first inflection point around 1.75eV, and then the absorption continues to increase, with a second absorption edge. The solar energy spectrum absorption range is proved to be increased.
Example 3
The energy band structure calculation adopts a first principle method based on a density functional theory, and the electron exchange correlation function is described by a GGA-PBE exchange correlation functional. FIG. 4 is Sb-doped MgIn 2 S 4 Under the condition of an energy band structure, a new doping energy level is introduced by Sb doping, a new optical absorption path is provided, and the optical absorption capacity is improved.
The embodiments described above are described to facilitate an understanding and use of the invention by those skilled in the art. It will be readily apparent to those skilled in the art that various modifications to these embodiments may be made, and the generic principles described herein may be applied to other embodiments without the use of the inventive faculty. Therefore, the present invention is not limited to the above embodiments, and those skilled in the art should make modifications and alterations without departing from the scope of the present invention.
Claims (5)
1. An In-based semiconductor material, characterized In that the component of the In-based semiconductor material is MgIn x2- Sb x S 4 Wherein x is more than 0 and less than or equal to 0.1 and is atomic percent, and the In-based semiconductor material is ternary mixed sulfide;
sb In the In-based semiconductor material exists In a trivalent state;
the solar energy absorption capacity of the In-based semiconductor material is In direct proportion to the atomic percent of Sb;
the theoretical absorption coefficient of visible light of the In-based semiconductor material is 10 4 ~ 10 5 cm -1 。
2. The In-based semiconductor material according to claim 1, wherein the In-based semiconductor material has a composition of MgIn 1.9 Sb 0.1 S 4 。
3. Use of an In-based semiconductor material as claimed In claim 1 In a solar cell, a photonic up/down converter or a photocatalyst.
4. A method for preparing an In-based semiconductor material as claimed In claim 1, characterized by comprising the steps of:
s1: grinding Mg powder, in particles, S powder and Sb blocks into powder according to the stoichiometric ratio, and then packaging the powder In a quartz glass tube In vacuum;
s2: placing the quartz tube in a muffle furnace for sintering, wherein the sintering temperature is 600-700 ℃;
s3: and grinding the mixture into powder after sintering is finished, packaging the powder In a quartz glass tube In vacuum, and repeating the step S2 once to obtain the final In-based semiconductor material.
5. The method according to claim 4, wherein the sintering process comprises first programming the temperature to 600-700 ℃, then maintaining the temperature within the range of 600-700 ℃ for 48-72 hours, and finally cooling to room temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910334098.7A CN111847508B (en) | 2019-04-24 | 2019-04-24 | In-based semiconductor material, preparation method and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910334098.7A CN111847508B (en) | 2019-04-24 | 2019-04-24 | In-based semiconductor material, preparation method and application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111847508A CN111847508A (en) | 2020-10-30 |
| CN111847508B true CN111847508B (en) | 2022-11-18 |
Family
ID=72952234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910334098.7A Active CN111847508B (en) | 2019-04-24 | 2019-04-24 | In-based semiconductor material, preparation method and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111847508B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120127320A (en) * | 2011-05-13 | 2012-11-21 | 주식회사 엘지화학 | New compound semiconductors and their application |
| CN103633165A (en) * | 2013-11-27 | 2014-03-12 | 中国科学院上海硅酸盐研究所 | Copper pyrites structural middle band solar cell absorption layer material and preparing method thereof |
| CN105236482A (en) * | 2015-09-02 | 2016-01-13 | 浙江大学 | Quaternary sulfur-antimony compound ACuSb2S4 semiconductor material |
| CN108091710A (en) * | 2017-12-13 | 2018-05-29 | 上海电机学院 | A kind of Intermediate Gray solar absorption semiconductor and preparation method thereof |
| CN109037373A (en) * | 2018-07-23 | 2018-12-18 | 上海电机学院 | A kind of MgIn2S4Base Intermediate Gray solar absorptive material and preparation method thereof |
-
2019
- 2019-04-24 CN CN201910334098.7A patent/CN111847508B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120127320A (en) * | 2011-05-13 | 2012-11-21 | 주식회사 엘지화학 | New compound semiconductors and their application |
| CN103633165A (en) * | 2013-11-27 | 2014-03-12 | 中国科学院上海硅酸盐研究所 | Copper pyrites structural middle band solar cell absorption layer material and preparing method thereof |
| CN105236482A (en) * | 2015-09-02 | 2016-01-13 | 浙江大学 | Quaternary sulfur-antimony compound ACuSb2S4 semiconductor material |
| CN108091710A (en) * | 2017-12-13 | 2018-05-29 | 上海电机学院 | A kind of Intermediate Gray solar absorption semiconductor and preparation method thereof |
| CN109037373A (en) * | 2018-07-23 | 2018-12-18 | 上海电机学院 | A kind of MgIn2S4Base Intermediate Gray solar absorptive material and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| 2-D硫属化合物的合成、结构和性质研究;吴静;《中国优秀博硕士学位论文全文数据库(硕士) 工程科技Ⅰ辑》;20160115;23-28 * |
| 尖晶石型复合硫化物的合成和性能;井艳等;《化学通报》;20130718;第76卷(第07期);594-598 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111847508A (en) | 2020-10-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104362412B (en) | A kind of ZnO/g-C3n4nano composite material and preparation method thereof | |
| Luo et al. | Highly efficient core–shell CuInS 2–Mn doped CdS quantum dot sensitized solar cells | |
| CN102054897B (en) | Method for preparing thin film solar cell from multi-element alloy single target material | |
| JP2008507835A (en) | Method for producing thin-film chalcopyrite compounds | |
| CN105932114A (en) | Method for preparing solar cell absorbing layer film based on water bath and post-selenization | |
| Varley et al. | Assessing the role of hydrogen in Fermi-level pinning in chalcopyrite and kesterite solar absorbers from first-principles calculations | |
| EP2660871A1 (en) | Compound semiconductor thin film solar cell, and process for production thereof | |
| Li et al. | Bi 13 S 18 X 2-based solar cells (X= Cl, Br, I): photoelectric behavior and photovoltaic performance | |
| CN109502545B (en) | Germanium selenide based sunlight decomposition water hydrogen production electronic device, electrode system and preparation method thereof | |
| CN101894678B (en) | Spongy quantum dot solar cell and preparation method thereof | |
| CN111847508B (en) | In-based semiconductor material, preparation method and application | |
| Zheng et al. | Application of quantum dots in perovskite solar cells | |
| CN108878658B (en) | Light-stable perovskite solar cell based on metal ion doped titanium dioxide spacing layer and preparation method thereof | |
| CN110422874B (en) | Indium sulfide-based impurity band semiconductor and preparation method and application thereof | |
| Ramli et al. | A mini-review of recent studies on lead and lead-free perovskite materials for solar cells application and their issues | |
| CN110422873B (en) | AgGaS2Semiconductor material with intermediate base band and preparation method thereof | |
| Kauk-Kuusik et al. | Cu 2 ZnSnS 4 monograin layer solar cells for flexible photovoltaic applications | |
| CN111863986B (en) | Cu-based semiconductor material and preparation method and application thereof | |
| Nar et al. | Determination optimum ni concentration in Zn2SnO4/Ni-Doped Sb2S3 thin films with different ni concentrations using incident photons to current efficiency (IPCE) and current density (J)-voltage (V) measurements | |
| CN111495365A (en) | Novel n-Cu2Preparation method of O/CuO semiconductor photocatalyst | |
| CN104692450A (en) | Preparation method for solar battery materials with three-zone gap tin doped with copper, gallium and sulphur | |
| CN109872877A (en) | A kind of dye-sensitized solar cells ZnO photo-anode and preparation method thereof | |
| Ding et al. | Fabrication of Buffer-Window Layer System for Cu (In, Ga) Se2 Thin Film Devices by Chemical Bath Deposition and Sol–Gel Methods | |
| CN104085917B (en) | Wurtzite structure Cu 2cdSnS 4the solvothermal preparation method of nano wire | |
| CN109103022B (en) | Dye-sensitized solar cell, working electrode thereof and working electrode material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |