CN111843224B - 用于处理基板的装置和方法 - Google Patents
用于处理基板的装置和方法 Download PDFInfo
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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Abstract
公开了一种用于处理基板的装置和方法。其中所述基板处理装置包括:腔室,其提供空间,在所述空间中处理基板;支承单元,其在所述腔室内支承所述基板;激光单元,其将激光照射到所述基板的边缘区域;视觉单元,其捕获所述基板的所述边缘区域以测量所述基板的偏移值;和调节单元,其基于所述基板的所述偏移值来调节所述激光的照射位置。
Description
相关申请的交叉引用
本申请要求于2019年4月30日提交的、申请号为10-2019-0050336的韩国专利申请的优先权和权益,其全部内容通过引用结合在本申请中。
技术领域
本文中描述的本发明构思的实施方案涉及一种基板处理装置和基板处理方法,尤其涉及一种用于蚀刻基板的边缘区域的基板处理装置和基板处理方法。
背景技术
为了制造半导体设备或液晶显示器,在基板上执行各种工艺,诸如光刻、蚀刻、灰化、离子注入、薄膜沉积和清洁。其蚀刻工艺是从形成在基板上的薄膜去除不必要的区域的工艺,并且要求对薄膜的高选择性和高蚀刻速率。
在现有技术中,在旋转基板以蚀刻基板的情况下,测量从基板反射的光的量以计算基板的边缘区域,然后,用激光照射或化学处理所计算的基板的边缘区域,以在基板的边缘区域上执行蚀刻工艺。然而,在计算出基板的边缘区域之后,基板被再次放置在基板的静电卡盘上以执行蚀刻工艺,因此增加了处理时间,并且即使在腔室中处理的基板的直径存在微小差异,也很难校正该微小差异。
发明内容
本发明构思的实施方案提供了一种基板处理装置和基板处理方法,其可以通过使用与激光同轴形成的视觉单元,来测量基板的偏心率(eccentricity)并且可以调节激光的照射位置。
本发明构思所要解决的技术问题不限于上述问题,且本发明构思所属领域的技术人员将从以下描述中清楚地理解本文中未提及的任何其他技术问题。
根据示例性实施方案,基板处理装置包括:腔室,其提供空间,在所述空间中处理基板;支承单元,其在所述腔室内支承所述基板;激光单元,其将激光照射到所述基板的边缘区域;视觉单元,其捕获所述基板的所述边缘区域以测量所述基板的偏移值;和调节单元,其基于所述基板的所述偏移值来调节所述激光的照射位置。
本文中,所述调节单元可以包括:主体;光反射单元,其设置在所述主体内部、并同轴地改变所述激光的照射方向和所述视觉单元的成像方向;和控制器,其通过驱动所述主体来调节所述激光的所述照射位置。
本文中,所述控制器可以通过调节所述主体的斜率来改变所述激光的所述照射位置。
本文中,所述控制器可以在由所述视觉单元捕获的图像中计算预定参考点和所述基板的端部之间的最短距离作为所述基板的所述偏移值,并且可以基于所述偏移值、和所述主体与所述基板之间的距离来调节所述主体的所述斜率。
另外,所述控制器可以通过改变所述主体的位置来改变所述激光的所述照射位置。
本文中,所述控制器可以将所述主体的所述位置移动与所述基板的所述偏移值相对应的距离。
此外,所述支承单元可以包括用于旋转所述基板的旋转头,并且所述调节单元可以基于所述基板的所述偏移值与所述旋转头一起同步控制。
本文中,所述调节单元可以生成与所述基板的旋转角度相对应的偏移值的轮廓(profile for the offset value),并且可以根据所述轮廓来调节所述激光的所述照射位置。
根据示例性实施方案,用于通过使用根据本发明构思实施方案的基板处理装置将激光照射到基板的边缘区域的基板处理方法可以包括:在旋转所述基板的情况下,捕获所述基板的所述边缘区域;根据所述基板的所述边缘区域中的所述基板的旋转角度,来生成所述基板的偏移值的轮廓;基于所述基板的所述偏移值的所述轮廓,来调节所述激光的照射位置;和照射所述激光以处理所述基板。
本文中,所述调节所述激光的所述照射位置可以包括:通过调节所述调节单元的斜率,来改变所述激光的所述照射位置。
本文中,所述生成所述基板的所述偏移值的所述轮廓可以包括:在由所述视觉单元捕获的图像中,计算预定参考点与所述基板的端部之间的最短距离作为所述基板的所述偏移值。所述改变所述激光的所述照射位置可以包括:基于所述偏移值、和所述调节单元与所述基板之间的距离,来调节所述调节单元的所述斜率。
另外,所述调节所述激光的所述照射位置可以包括:通过改变所述调节单元的位置来改变所述激光的照射位置。
本文中,所述改变所述激光的所述照射位置可以包括:将所述调节单元的位置移动与所述基板的所述偏移值相对应的距离。
附图说明
参照以下附图,上述和其他目的及特征将从以下描述中变得显而易见,其中,除非另有说明,否则贯穿各种附图,相同的附图标记指代相同的部件,并且其中:
图1是根据本发明构思的实施方案的基板处理装置的平面图;
图2是示出了根据本发明构思的实施方案的基板处理装置的截面图;
图3是示出了根据本发明构思的实施方案的激光单元、视觉单元和调节单元的配置的截面图;
图4是示出了由根据本发明构思的实施方案的视觉单元捕获的图像的实施例的视图;
图5至图7是用于描述根据本发明构思的实施方案,通过调节主体的斜率来改变激光照射位置的方法的视图;
图8是用于描述根据本发明构思的实施方案,通过改变主体的位置来改变激光照射位置的方法的视图;和
图9是示出了根据本发明构思的实施方案的基板处理方法的流程图。
具体实施方式
在下文中,将参照附图详细描述本发明构思的实施方案,使得本发明构思所属领域的技术人员可以容易地实行本发明构思。然而,本发明构思可以以各种不同的形式来实施,且不限于本文中描述的实施方案。此外,在描述本发明构思的实施方案中,当与已知功能或配置有关的详细描述可能使本发明构思的主题不必要地模糊时,该详细描述被省略。另外,贯穿附图,执行相似功能和操作的组件设置有相同的附图标记。
说明书中的术语“包括(include)”和“包括(comprise)”为“开放式”表述,仅为了说明存在相应组件,并且除非另有相反地特别说明,否则不排除但可能包括额外的组件。特别地,应当理解的是,术语“包括(include)”、“包括(comprise)”和“具有(have)”,在本文中使用时,特指存在所述特征、整数(integer)、步骤、操作、组件和/或部件,但不排除存在或添加一个或多个其他特征、整数、步骤、操作、组件、部件和/或其组。除非另有特指,否则单数形式的术语可以包括复数形式。此外,在附图中,为了说明的清楚,组件的形状和尺寸可能被夸大。
图1是根据本发明构思的实施方案的基板处理装置的平面图。参照图1,基板处理装置10包括索引模块100和工艺模块200。索引模块100包括装载端口120和传送框架140。装载端口120、传送框架140和工艺模块200可以布置成排。在下文中,装载端口120、传送框架140和工艺模块200布置的方向可以被称为“第一方向”12。当从上面观察时,垂直于第一方向12的方向可以被称为“第二方向”14,并且垂直于由第一方向12和第二方向14限定的平面的方向可以被称为“第三方向”16。
接收基板W的载体130可以放置在装载端口120上。装载端口120沿第二方向14布置成排。可以根据工艺模块200中诸如工艺效率和占地面积等条件来增加或减少装载端口120的数量。在载体130中形成有多个槽(未示出),用于在基板W以水平位置放置在地面上的状态下接收基板W。前开式晶圆盒(front opening unified pod,FOUP)可以用作载体130。
工艺模块200具有缓冲单元220、传送腔室240和工艺腔室260a或260b。传送腔室240设置为使得其长度方向平行于第一方向12。工艺腔室260a和260b分别布置在传送腔室240的两侧上。工艺腔室260a和260b设置在传送腔室240的一侧和另一侧处,以相对于传送腔室240是对称的。多个工艺腔室260a和260b设置在传送腔室240的一侧处。工艺腔室260a和260b的一部分沿传送腔室240的长度方向布置。另外,工艺腔室260a和260b的一部分布置为堆叠的。即,工艺腔室260a和260b可以以“A×B”的阵列布置在传送腔室240的一侧处。本文中,“A”是指沿第一方向12设置成排的工艺腔室260a和260b的数量;“B”是指沿第三方向16设置成排的工艺腔室260a和260b的数量。当四个或六个工艺腔室260a和260b设置在传送腔室240的一侧时,工艺腔室260a和260b可以布置成“2×2”或“3×2”的阵列。工艺腔室260a和260b的数量可以增加或减少。与以上描述不同,工艺腔室260a和260b可以仅设置在传送腔室240的一侧处。此外,工艺腔室260a和260b可以在传送腔室240的一侧和两侧处设置为单层。
缓冲单元220介于传送框架140和传送腔室240之间。缓冲单元220提供基板W在传送腔室240和传送框架140之间传送之前停留的空间。放置基板W的槽(未示出)设置在缓冲单元220内部。多个槽可以设置成沿第三方向16彼此间隔开。缓冲单元220可以具有面向传送框架140的敞开表面、以及面向传送腔室240的敞开表面。
传送框架140在缓冲单元220和放置在装载端口120上的载体130之间传送基板W。传送框架140包括索引轨道142和索引机械手144。索引轨道142布置成使得其长度方向平行于第二方向14。索引机械手144安装在索引轨道142上,并沿索引轨道142在第二方向14上线性移动。索引机械手144可以具有基部144a、主体144b和索引臂144c。基部144a可以安装成沿索引轨道142为可移动的。主体144b耦合至基部144a。主体144b设置成沿第三方向16在基部144a上为可移动的。另外,主体144b设置为在基部144a上是可旋转的。索引臂144c耦合至主体144b,并且相对于主体144b是前后可移动的。可以设置多个索引臂144c;多个索引臂144c可以单独地操作。索引臂144c布置成在索引臂144c彼此间隔开的状态下沿第三方向16堆叠。一些索引臂144c可以用于将基板W从工艺模块200传送至载体130,且其他索引臂144c可以用于将基板W从载体130传送至工艺模块200。因此,在索引机械手144传送和接收基板W的工艺中,可以防止工艺处理之前从基板W产生的颗粒附着到工艺处理之后的基板W。
传送腔室240在缓冲单元220和工艺腔室260a和260b之间、以及工艺腔室260a和260b之间传送基板W。导轨242和主机械手244可以设置在传送腔室240中。导轨242布置成使得其纵向方向平行于第一方向12。主机械手244安装在导轨242上,并沿第一方向12在导轨242上线性移动。主机械手244可以具有基部244a、主体244b和主臂244c。基部244a被安装成沿导轨242为可移动的。主体244b耦合至基部244a。主体244b设置成沿第三方向16在基部244a上为可移动的。另外,主体244b设置为在基部244a上是可旋转的。主臂244c耦合至主体244b,并且相对于主体244b是前后可移动的。可以设置多个主臂244c;并且多个主臂244c可以单独地操作。主臂244c布置成在主臂244c彼此间隔开的状态下沿第三方向16堆叠。
工艺腔室260a和260b可以包括清洁处理腔室260a和边缘处理腔室260b。清洁处理腔室260a可以在基板W上执行清洁工艺。清洁处理腔室260a可以通过将清洁溶液供应到旋转的基板W的中心区域来执行清洁工艺。清洁处理腔室260a可以根据类型而具有不同的结构。替代地,清洁处理腔室260a可以具有相同的结构。可选地,清洁处理腔室260a可以被分为多个组,并且属于相同组的清洁处理腔室260a可以具有相同的结构;属于不同组的清洁处理腔室260a可以具有不同的结构。
边缘处理腔室260b可以处理基板W的边缘区域。边缘处理腔室260b可以根据类型而具有不同的结构。替代地,边缘处理腔室260b可以具有相同的结构。可选地,边缘处理腔室260b可以被分为多个组,并且属于相同组的边缘处理腔室260b可以具有相同的结构;属于不同组的边缘处理腔室260b可以具有不同的结构。在基板W的边缘区域上执行处理工艺的基板处理装置300设置在边缘处理腔室260b中。
图2是示出了根据本发明构思的实施方案的基板处理装置的截面图。参照图2,基板处理装置300可以包括支承单元310、处理容器320、升降单元330、激光单元340、视觉单元350、调节单元360和排水单元400。
支承单元310支承并旋转基板W。支承单元310包括支承板312和旋转驱动构件313。支承板312支承基板W。支承板312可以设置为具有圆板的形状。支承板312可以具有比基板W小的直径。在支承板312的支承表面上形成有吸收孔316,并且可以向吸收孔316提供负压。基板W可以通过负压吸附到支承表面。
转动驱动构件313旋转支承板312。例如,旋转驱动构件313可以设置为旋转头。旋转驱动构件313包括旋转轴314和致动器315。旋转轴314设置为使得其长度方向具有面对在竖直方向上的圆柱形状。旋转轴314耦合到支承板312的底表面。致动器315将旋转力传递到旋转轴314。旋转轴314通过从致动器315提供的旋转力绕中心轴为可旋转的。支承板312为与旋转轴314一起可旋转的。旋转轴314的旋转速度由致动器315来调节,因此旋转轴314能够调节基板W的旋转速度。例如,致动器315可以是电动机。
处理容器320在其中提供处理空间322。处理容器320设置为具有敞开的杯子的形状。处理容器320可以设置为围绕支承单元310。处理容器320包括底表面部324、侧部326和顶表面部328。底表面部324设置为中空盘形状。
回收管线325形成在底表面部324上。回收管线325可以将通过处理空间322回收的处理溶液提供至外部液体再生***(未示出)。侧部326设置为中空圆柱形。侧部326在竖直方向上从底表面部324的一侧端部延伸。侧部326从底表面部324向上延伸。顶表面部328从侧部326的顶端延伸。顶表面部328在接近支承单元310时面向向上倾斜的方向。
升降单元330调节支承单元310和处理容器320之间的相对高度。升降单元330竖直地移动处理容器320。升降单元330可以包括支架332、移动轴334和驱动构件336。驱动构件336可以是电动机。支架332固定地耦合到处理容器320的侧部326。移动轴334支承支架332。移动轴334设置为使得其长度方向面向竖直方向。驱动构件336竖直地移动移动轴334。因此,支架332和处理容器320是竖直可移动的。
激光单元340将激光照射到基板的边缘区域。视觉单元350通过捕获基板的边缘区域来测量基板的偏移值。调节单元360可以基于由视觉单元350测量的基板的偏移值来调节激光的照射位置。参照图3,调节单元360可以包括主体361、光反射单元362、分光器363、控制器364和照明单元365。光反射单元362设置在主体361内部,以同轴地改变从激光单元340照射的激光的照射方向和视觉单元350的成像方向。可以设置多个光反射单元362以精确地控制激光的照射方向。分光器363可以透射特定波长的光,并且可以反射另一波长的光。例如,分光器363可以透射从激光单元340照射的激光,并且可以将激光提供到光反射单元362;分光器363可以反射基板的边缘区域的反射光,并且可以将反射光提供到视觉单元350。照明单元365设置在主体361下方,以将光照射到基板的边缘区域。视觉单元350可以接收从基板由从照明单元365照射的光而反射的反射光,以捕获基板的边缘区域。照明单元365可以设置为发光二极管(LED),但是不限于此。例如,可以在照明单元365的中心处布置用于将光聚集在中心处的透镜,并且可以在透镜周围布置多个LED。控制器364驱动主体361以调节激光的照射位置。控制器364可以改变主体361的斜率,或者可以移动主体361的位置。此外,控制器364可以调节光反射单元362以调节激光器的照射位置。在下文中,将参照图4至图8详细描述本发明构思的调节单元360调节激光的照射位置的方法。
参照图4,视觉单元350可以通过捕获基板的边缘区域来获得图像500,并且可以通过测量基板的端部与预定参考点510之间的距离来计算基板的偏移值。本文中,参考点510可以是图像500的中心点,并且偏移值可以是基板的端部与参考点510之间的最短距离。当获得基板的偏移值时,如图5所示,控制器364可以通过调节主体361的斜率来改变激光的照射位置。此时,可以使用基板的偏移值、和基板与调节单元360之间的距离Wd来计算主体361的斜率。也就是说,如图6所示,因为主体361的斜率是以基板与调节单元360之间的距离Wd为底、并以基板的偏移值为高的直角三角形的内角,所以可以使用三角函数来计算主体361的斜率。视觉单元350可以通过根据基板的旋转捕获基板的边缘区域,来获得基板的所有边缘区域中的基板的偏移值。此外,可以使用所获得的基板的偏移值、和所获得的基板与调节单元360之间的距离Wd来计算基板的所有边缘区域中的主体361的斜率。例如,如图7所示,可以根据基板的旋转角度计算主体361的斜率和基板的偏移值。也就是说,在获得基板的所有边缘区域中的基板的偏移值之后,本发明构思可以通过计算与所获得的基板的偏移值相对应的主体361的斜率,在基板的边缘区域上执行精确的蚀刻工艺。此外,调节单元360可以基于基板的偏移值与旋转头313一起同步控制;调节单元360可以生成与基板旋转角度相对应的基板偏移值的轮廓,并且可以根据所生成的轮廓来调节激光的照射位置。此外,如图8所示,当通过视觉单元350获得基板的偏移值时,调节单元360可以通过将主体361移动与基板的偏移值相对应的距离来改变激光的照射位置。
图9为示出了根据本发明构思的实施方案的基板处理方法的流程图。
参照图9,首先,在S910中,在旋转基板的情况下捕获基板的边缘区域。接下来,在S920中,根据基板的边缘区域中的基板的旋转角度,生成基板的偏移值的轮廓。特别地,可以在由视觉单元捕获的图像中,计算预定参考点与基板的端部之间的最短距离作为基板的偏移值。
接下来,在S930中,基于基板的偏移值的轮廓来调节激光的照射位置。例如,可以通过调节调节单元的斜率来改变激光的照射位置。在这种情况下,可以基于基板的偏移值、和调节单元与基板之间的距离,来计算调节单元的斜率。又例如,可以通过改变调节单元的位置来改变激光的照射位置。在这种情况下,可以通过将调节单元的位置移动与基板偏移值相对应的距离来改变激光的照射位置。
接下来,在S940中,通过照射激光来处理基板。
根据本发明构思的实施方案,测量基板的偏移值、并基于所测量的偏移值调节激光的照射位置,从而减少了蚀刻工艺的处理时间。另外,即使当发生基板的直径差异时,也可以改进蚀刻工艺的准确性。
根据本发明构思的实施方案,测量基板的偏心率并基于所测量的偏心率来调节激光的照射位置,从而减少了蚀刻工艺的处理时间。此外,即使当发生基板的直径差异时,也可以改进蚀刻工艺的准确性。
本发明构思的效果不限于上述效果,且本发明构思所属领域的技术人员可以从本说明书和附图中清楚地理解本文中未提及的任何其他效果。
虽然上面已经描述了本发明构思的实施方案,但是应当理解的是,提供实施方案是为了帮助理解本发明构思,而不旨在限制本发明构思的范围,并且在不脱离本发明构思的精神和范围的情况下,可以做出各种修改和等同的实施方案。本发明构思的范围应当由权利要求的技术理念确定,并且应当理解的是,本发明构思的范围不限于权利要求的文字描述,而是实际上延伸到技术价值的等同物的范畴。
虽然已经参照示例性实施方案描述了本发明构思,但对于本领域的技术人员来说将显而易见的是,在不脱离本发明构思的精神和范围的情况下,可以做出各种改变和修改。因此,应当理解的是,上述实施方案并非限制性的,而是说明性的。
Claims (12)
1.一种基板处理装置,其中,所述基板处理装置包括:
腔室,所述腔室配置为提供空间,在所述空间中处理基板;
支承单元,所述支承单元配置为在所述腔室内支承所述基板;
激光单元,所述激光单元配置为将激光照射到所述基板的边缘区域;
视觉单元,所述视觉单元配置为捕获所述基板的所述边缘区域以测量所述基板的偏移值;以及
调节单元,所述调节单元配置为基于所述基板的所述偏移值来调节所述激光的照射位置;
其中,所述调节单元生成与所述基板的旋转角度相对应的偏移值的轮廓,并且根据所述轮廓来调节所述激光的所述照射位置;
其中,所述调节单元包括主体和控制器,所述控制器配置为通过驱动所述主体来调节所述激光的所述照射位置,所述控制器在由所述视觉单元捕获的图像中、计算预定参考点和所述基板的端部之间的最短距离以作为所述基板的所述偏移值。
2.根据权利要求1所述的基板处理装置,其中,所述调节单元还包括:
光反射单元,所述光反射单元设置在所述主体内部、并配置为同轴地改变所述激光的照射方向和所述视觉单元的成像方向。
3.根据权利要求2所述的基板处理装置,其中,所述控制器通过调节所述主体的斜率来改变所述激光的所述照射位置。
4.根据权利要求3所述的基板处理装置,其中,所述控制器基于所述偏移值、和所述主体与所述基板之间的距离来调节所述主体的所述斜率。
5.根据权利要求2所述的基板处理装置,其中,所述控制器通过改变所述主体的位置来改变所述激光的所述照射位置。
6.根据权利要求5所述的基板处理装置,其中,所述控制器将所述主体的位置移动与所述基板的所述偏移值相对应的距离。
7.根据权利要求4所述的基板处理装置,其中,所述支承单元包括用于旋转所述基板的旋转头,并且
其中,所述调节单元基于所述基板的所述偏移值与所述旋转头一起同步控制。
8.一种基板处理方法,所述基板处理方法用于通过使用权利要求1所述的基板处理装置将激光照射到基板的边缘区域,其中,所述方法包括:
在旋转所述基板的情况下、捕获所述基板的所述边缘区域;
根据所述基板的所述边缘区域中的所述基板的旋转角度,来生成所述基板的偏移值的轮廓;
基于所述基板的所述偏移值的所述轮廓,来调节所述激光的照射位置;和
照射所述激光以处理所述基板。
9.根据权利要求8所述的方法,其中,所述调节所述激光的所述照射位置包括:
通过调节所述调节单元的斜率,来改变所述激光的所述照射位置。
10.根据权利要求9所述的方法,其中,所述生成所述基板的所述偏移值的所述轮廓包括:
在由所述视觉单元捕获的图像中,计算预定参考点与所述基板的端部之间的最短距离以作为所述基板的所述偏移值,并且
其中,所述改变所述激光的所述照射位置包括:
基于所述偏移值、和所述调节单元与所述基板之间的距离,来调节所述调节单元的所述斜率。
11.根据权利要求8所述的方法,其中,所述调节所述激光的所述照射位置包括:
通过改变所述调节单元的位置来改变所述激光的照射位置。
12.根据权利要求11所述的方法,其中,所述改变所述激光的所述照射位置包括:
将所述调节单元的位置移动与所述基板的所述偏移值相对应的距离。
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