CN111826617A - Electromagnetic wave shielding film and method for producing same - Google Patents

Electromagnetic wave shielding film and method for producing same Download PDF

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CN111826617A
CN111826617A CN201911076630.6A CN201911076630A CN111826617A CN 111826617 A CN111826617 A CN 111826617A CN 201911076630 A CN201911076630 A CN 201911076630A CN 111826617 A CN111826617 A CN 111826617A
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layer
metal
gas
sputtering
insulating
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由龙
赵伟业
张林杰
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Shenzhen Kenuoqiao Technology Co ltd
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F17/00—Multi-step processes for surface treatment of metallic material involving at least one process provided for in class C23 and at least one process covered by subclass C21D or C22F or class C25
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073—Shielding materials
    • H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
    • H05K9/0084—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a single continuous metallic layer on an electrically insulating supporting structure, e.g. metal foil, film, plating coating, electro-deposition, vapour-deposition

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Abstract

The invention belongs to the technical field of electronics, and particularly relates to a preparation method of an electromagnetic wave shielding film, which comprises the following steps: obtaining a carrier layer and insulating slurry, and depositing the insulating slurry on the carrier layer to obtain an insulating layer; obtaining a metal material, and depositing the metal material on the surface of one side, far away from the carrier layer, of the insulating layer in a sputtering and electroplating mode to obtain a metal shielding layer; and obtaining a conductive adhesive material, and depositing the conductive adhesive material on the surface of one side of the metal shielding layer, which is far away from the insulating layer, to obtain a conductive adhesive layer. The preparation method of the electromagnetic shielding film provided by the invention has the advantages that the thickness of the whole film layer of the prepared electromagnetic shielding film is smaller, the electromagnetic shielding film is more suitable for flexible devices, the film layers are tightly combined, the extensibility is good, the electromagnetic transmission is fast, the loss is low, and the shielding efficiency is more excellent.

Description

Electromagnetic wave shielding film and method for producing same
Technical Field
The invention belongs to the technical field of electronics, and particularly relates to an electromagnetic wave shielding film and a preparation method thereof.
Background
With the rapid development of the electronic industry, electronic products gradually develop towards miniaturization, lightweight, portability and high-density packaging, which greatly promotes the development of electronic components, the integration level of semiconductor chips is higher and higher, and the number of input/output ports (I/O) on the unit area of the electronic components is higher and higher. The improvement of the integration level puts higher requirements on an electronic packaging technology, and requires that electronic components are thinner and have better conductivity. In addition, in order to avoid signal interference caused by electromagnetic radiation and threat to human health, better electromagnetic shielding effectiveness is required for electronic products. Therefore, electromagnetic shielding materials are used in large quantities on the lines of electronic components. At present, the electromagnetic shielding material mainly has a conductive type, a filling type, an intrinsic type and a wave absorption type, the preparation method mainly includes methods of metal foil pasting, sputtering plating, electroplating, chemical plating, conductive material coating and the like, and the electromagnetic shielding film is the main form.
Along with the proposal of 5G transmission signals and the increasingly dense wiring circuits of the flexible circuit board, the requirements on the electromagnetic shielding film are higher and higher, the electromagnetic shielding film is required to be thinner, the conductivity is better, and the anti-interference capability on the signals is stronger. Traditionally, electromagnetic shielding film mainly includes insulating layer, metal level, conducting resin layer etc. and electromagnetic shielding film overall thickness is higher, and the rete combines the compactness not good enough between the rete, influences electromagnetic shielding film's stability and shielding effect.
Disclosure of Invention
The invention aims to provide a preparation method of an electromagnetic shielding film, and aims to solve the technical problems that the prepared electromagnetic shielding film is high in overall thickness, poor in bonding tightness among film layers, influenced in stability and shielding effect and the like in the conventional preparation method of the electromagnetic shielding film.
Another object of the present invention is to provide an electromagnetic shielding film.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention is as follows:
a method for manufacturing an electromagnetic wave-shielding film, comprising the steps of:
obtaining a carrier layer and insulating slurry, and depositing the insulating slurry on the carrier layer to obtain an insulating layer;
obtaining a metal material, and depositing the metal material on the surface of one side, far away from the carrier layer, of the insulating layer in a sputtering and electroplating mode to obtain a metal shielding layer;
and obtaining a conductive adhesive material, and depositing the conductive adhesive material on the surface of one side of the metal shielding layer, which is far away from the insulating layer, to obtain a conductive adhesive layer.
Preferably, the step of depositing the metal material on the surface of the insulating layer away from the carrier layer by means of sputtering and electroplating comprises:
depositing the metal material on the surface of one side, away from the carrier layer, of the insulating layer in sequence by sputtering and electroplating; alternatively, the first and second electrodes may be,
and depositing the metal material on the surface of the insulating layer, which is far away from the carrier layer, by means of sputtering, electroplating and sputtering in sequence.
Preferably, the step of depositing the metal material on the surface of the insulating layer away from the carrier layer by means of sputtering and electroplating comprises:
sputtering and depositing the metal material on the surface of the insulating layer by adopting vacuum sputtering to obtain a metal sputtering layer;
depositing a metal piercing structure on the surface of the other side, far away from the insulating layer, of the metal sputtering layer by adopting acid copper electroplating treatment to obtain a metal shielding layer; alternatively, the first and second electrodes may be,
sputtering and depositing the metal material on the surface of the insulating layer by adopting vacuum sputtering to obtain a metal sputtering layer;
adopting alkali copper electroplating treatment to deposit a metal material on the surface of the other side of the metal sputtering layer, which is far away from the insulating layer, so as to obtain a metal electroplated layer;
and depositing a metal piercing structure on the surface of the other side of the metal electroplated layer, which is far away from the metal sputtering layer, by adopting acid copper electroplating treatment to obtain the metal shielding layer.
Preferably, the vacuum sputtering is performed at a vacuum degree of not more than 1 x 10-3Pa, the sputtering speed is 0.5-5m/min, the sputtering current is 3-7A, and the inert gas flow is 30-60 ppm; and/or the presence of a gas in the gas,
the acid copper electroplating treatment adopts a mixed solution of copper sulfate with the concentration of 80-120 g/L and anhydrous copper sulfate with the concentration of 80-120 g/L; and/or the presence of a gas in the gas,
the alkali copper electroplating treatment adopts a mixed solution of copper pyrophosphate with the concentration of 30-100 g/L and potassium pyrophosphate with the concentration of 200-400 g/L, and the pH value of the mixed solution is 8-10.
Preferably, the insulating paste includes a PFA resin and an insulating material selected from: at least one of polyimide, tetrafluoroethylene, polyphenylene sulfide, polyamide, ethylene-tetrafluoroethylene copolymer, polyetherimide and polyethylene naphthalate; and/or the presence of a gas in the gas,
the solvent in the insulating slurry is selected from: at least one of N-methyl-2-pyrrolidone, gamma-butyrolactone, N-dimethylformamide, N-dimethylacetamide and dimethyl sulfoxide; and/or the presence of a gas in the gas,
the viscosity of the insulating paste is 2000-10000 cps.
Preferably, the step of depositing the insulating paste on the carrier layer to obtain an insulating layer further comprises the steps of: obtaining PFA resin, and depositing the PFA resin on the surface of one side of the insulating layer, which is far away from the carrier layer, to obtain a PFA resin layer;
and obtaining a metal material, and depositing the metal material on the surface of one side, far away from the insulating layer, of the PFA resin layer in a sputtering and electroplating mode to obtain a metal shielding layer.
Preferably, the thickness of the PFA resin layer is 1 to 10 micrometers; and/or the presence of a gas in the gas,
the insulating paste is selected from: at least one of polyimide slurry, tetrafluoroethylene slurry, polyphenylene sulfide slurry, polyamide slurry, ethylene-tetrafluoroethylene copolymer slurry, polyetherimide slurry and polyethylene naphthalate slurry; and/or the presence of a gas in the gas,
the solvent in the insulating slurry is selected from: at least one polar solvent selected from N-methyl-2-pyrrolidone, gamma-butyrolactone, N-dimethylformamide, N-dimethylacetamide and dimethyl sulfoxide; and/or the presence of a gas in the gas,
the viscosity of the insulating paste is 2000-10000 cps.
Preferably, the thickness of the insulating layer is 1-5 microns; and/or the presence of a gas in the gas,
the thickness of the metal shielding layer is 1-5 microns; and/or the presence of a gas in the gas,
the thickness of the conductive adhesive layer is 2-5 microns; and/or the presence of a gas in the gas,
the metal material comprises silicon and a metal selected from: at least one of gold, silver, nickel, chromium, copper, boron, beryllium, aluminum, tin and titanium; and/or the presence of a gas in the gas,
the conductive adhesive material includes a resin and a conductive material.
Preferably, the resin comprises the following components in percentage by mass based on 100% of the total mass of the resin:
Figure BDA0002262675390000041
the form of the conductive material comprises at least one of dendritic form, spherical form, sheet form and irregular form; and/or the presence of a gas in the gas,
the conductive material is selected from: at least one of silver-coated copper, silver-coated nickel, graphene and nanowires; and/or the presence of a gas in the gas,
the content of the conductive material in the conductive adhesive layer is 5-20%.
An electromagnetic wave shielding film produced by the method according to any one of claims 1 to 9, comprising a carrier layer, an insulating layer, a metal shielding layer and a conductive adhesive layer, which are laminated in this order, wherein the insulating layer contains a PFA resin;
alternatively, the first and second electrodes may be,
the electromagnetic wave shielding film comprises a carrier layer, an insulating layer, a PFA resin layer, a metal shielding layer and a conductive adhesive layer which are sequentially stacked.
The preparation method of the electromagnetic shielding film provided by the invention comprises the steps of firstly, depositing the insulating slurry on the carrier layer to prepare the insulating layer, and preparing the insulating layer in a direct deposition mode, so that compared with the method of directly obtaining the formed insulating layer, the thickness of the insulating layer is greatly reduced, the combination tightness of the insulating material, the carrier layer and the metal shielding layer is improved, and the thickness of the insulating layer can be flexibly adjusted by controlling the deposition process; and then, a metal material is deposited on the surface of one side, away from the carrier layer, of the insulating layer in a sputtering and electroplating mode to obtain a metal shielding layer, and meanwhile, the metal shielding layer is deposited by adopting a sputtering and electroplating process, so that the process is accelerated, the bonding tightness of the metal shielding layer is improved, and the ductility and the shielding efficiency of the electromagnetic shielding film are improved. And depositing a conductive adhesive material on the surface of one side of the metal shielding layer, which is far away from the insulating layer, to obtain a conductive adhesive layer, thereby preparing the electromagnetic shielding film. The preparation method of the electromagnetic shielding film provided by the invention has the advantages that the thickness of the whole film layer of the prepared electromagnetic shielding film is smaller, the electromagnetic shielding film is more suitable for flexible devices, the film layers are tightly combined, the extensibility is good, the electromagnetic transmission is fast, the loss is low, and the shielding efficiency is more excellent.
The electromagnetic wave shielding film provided by the invention is prepared by the method, so that the whole film layer of the prepared electromagnetic wave shielding film is thinner, the electromagnetic wave shielding film is more suitable for flexible devices, the bonding among the film layers is tight, the extensibility is good, the electromagnetic transmission is fast, the loss is low, and the shielding efficiency is better.
Drawings
Fig. 1 is a schematic structural diagram of an electromagnetic shielding film according to an embodiment of the present invention.
Fig. 2 is another schematic structural diagram of an electromagnetic shielding film according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of an electromagnetic shielding film including a spike-piercing structure according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of an electromagnetic shielding film including a dendritic puncturing structure according to an embodiment of the present invention.
Fig. 5 is a schematic structural diagram of an electromagnetic shielding film including a circular arc piercing structure according to an embodiment of the present invention.
Detailed Description
In order to make the purpose, technical solution and technical effect of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention is clearly and completely described, and it is obvious that the described embodiments are a part of the embodiments of the present invention, but not all embodiments. All other embodiments obtained by a person of ordinary skill in the art without any inventive step in connection with the embodiments of the present invention shall fall within the scope of protection of the present invention.
In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
The weight of the related components mentioned in the description of the embodiments of the present invention may not only refer to the specific content of each component, but also represent the proportional relationship of the weight among the components, and therefore, the content of the related components is scaled up or down within the scope disclosed in the description of the embodiments of the present invention as long as it is in accordance with the description of the embodiments of the present invention. Specifically, the weight described in the description of the embodiment of the present invention may be a unit of mass known in the chemical industry field, such as μ g, mg, g, and kg.
The embodiment of the invention provides a preparation method of an electromagnetic wave shielding film, which comprises the following steps:
s10, obtaining a carrier layer and insulation slurry, and depositing the insulation slurry on the carrier layer to obtain an insulation layer;
s20, obtaining a metal material, and depositing the metal material on the surface of one side, away from the carrier layer, of the insulating layer in a sputtering and electroplating mode to obtain a metal shielding layer;
and S30, obtaining a conductive adhesive material, and depositing the conductive adhesive material on the surface of one side, far away from the insulating layer, of the metal shielding layer to obtain a conductive adhesive layer.
According to the preparation method of the electromagnetic shielding film, firstly, the insulating slurry is deposited on the carrier layer to prepare the insulating layer, and compared with the insulating layer which is formed by directly obtaining the insulating layer, the insulating layer is prepared in a direct deposition mode, the thickness of the insulating layer is greatly reduced, the combination tightness of the insulating material, the carrier layer and the metal shielding layer is improved, and the thickness of the insulating layer can be flexibly adjusted by controlling the deposition process; and then, a metal material is deposited on the surface of one side, away from the carrier layer, of the insulating layer in a sputtering and electroplating mode to obtain a metal shielding layer, and meanwhile, the metal shielding layer is deposited by adopting a sputtering and electroplating process, so that the process is accelerated, the bonding tightness of the metal shielding layer is improved, and the ductility and the shielding efficiency of the electromagnetic shielding film are improved. And depositing a conductive adhesive material on the surface of one side of the metal shielding layer, which is far away from the insulating layer, to obtain a conductive adhesive layer, thereby preparing the electromagnetic shielding film. According to the preparation method of the electromagnetic shielding film provided by the embodiment of the invention, the thickness of the whole film layer of the prepared electromagnetic shielding film is smaller, the electromagnetic shielding film is more suitable for flexible devices, the film layers are tightly combined, the extensibility is good, the electromagnetic transmission is fast, the loss is low, and the shielding efficiency is more excellent.
Specifically, in step S10, a carrier layer and an insulating paste are obtained, and the insulating paste is deposited on the carrier layer to obtain an insulating layer. The insulating layer of the electromagnetic shielding film is prepared by directly depositing the insulating slurry on the carrier layer by coating, spraying and the like and drying, and compared with the method for directly obtaining the formed insulating layer to be attached to the electromagnetic shielding film, the thickness of the insulating layer is greatly reduced, so that the overall thickness of the insulating layer is effectively reduced, the combination tightness of the insulating material, the carrier layer and the metal shielding layer is improved, the thickness of the insulating layer can be flexibly adjusted by controlling the deposition process, and the electromagnetic shielding film is wider in application range, flexible and convenient.
In a further embodiment, the thickness of the insulating layer is 1-5 microns, and compared with a directly obtained formed insulating layer, the thickness of the insulating layer is greatly reduced, and the whole thickness of the electromagnetic shielding film is favorably reduced, so that the flexibility and the ductility of the electromagnetic shielding film are enhanced, the electromagnetic shielding film is more suitable for flexible devices, and the electromagnetic shielding film is wider in application, flexible and convenient.
In some embodiments, the insulating paste includes a PFA resin and an insulating material selected from the group consisting of: at least one of polyimide, tetrafluoroethylene, polyphenylene sulfide, polyamide, ethylene-tetrafluoroethylene copolymer, polyetherimide and polyethylene naphthalate. The insulating slurry in the embodiment of the invention contains PFA resin which is a copolymer of a small amount of perfluoropropyl perfluorovinyl ether and polytetrafluoroethylene, has strong fusion cohesiveness, excellent chemical corrosion resistance, high tensile strength, good electrical property and stable electrical insulation property, and can effectively reduce the dielectric loss and dielectric constant of the electromagnetic shielding film. In addition, materials such as polyimide, tetrafluoroethylene, polyphenylene sulfide, polyamide, ethylene-tetrafluoroethylene copolymer, polyetherimide, polyethylene naphthalate and the like have good insulativity and tensile property, and can be quickly cured.
In a further embodiment, the solvent in the insulating paste is selected from: at least one of N-methyl-2-pyrrolidone, gamma-butyrolactone, N-dimethylformamide, N-dimethylacetamide and dimethyl sulfoxide. The solvent in the insulating paste of the embodiment of the invention adopts at least one polar solvent of N-methyl-2-pyrrolidone, gamma-butyrolactone, N-dimethylformamide, N-dimethylacetamide and dimethyl sulfoxide, and the polar solvents have good dissolving effect on PFA resin, polyimide, tetrafluoroethylene, polyphenylene sulfide, polyamide, ethylene-tetrafluoroethylene copolymer, polyetherimide, polyethylene naphthalate and other substances, so that after the insulating paste is formed, the insulating paste is conveniently deposited on a carrier layer by adopting the processes of coating, spraying and the like, and the insulating layer is obtained by drying and curing.
In a further embodiment, the viscosity of the insulating slurry is 2000-10000cps, and the viscosity of the insulating slurry can be flexibly regulated according to a specific deposition process, so that the insulating slurry is suitable for different deposition processes, for example, when a coating deposition mode is adopted, the insulating slurry adopts relatively high viscosity, and is convenient for coating and film forming; when spray deposition is used, the dielectric paste is then applied with a relatively low viscosity and is sprayed.
In some embodiments, the insulating paste includes a PFA resin and an insulating material selected from the group consisting of: at least one of polyimide, tetrafluoroethylene, polyphenylene sulfide, polyamide, ethylene-tetrafluoroethylene copolymer, polyetherimide and polyethylene naphthalate; the solvent in the insulating slurry is selected from: at least one of N-methyl-2-pyrrolidone, gamma-butyrolactone, N-dimethylformamide, N-dimethylacetamide and dimethyl sulfoxide; the viscosity of the insulating paste is 2000-10000 cps.
Specifically, in step S20, a metal material is obtained, and the metal material is deposited on a surface of the insulating layer away from the carrier layer by sputtering and electroplating, so as to obtain a metal shielding layer. The embodiment of the invention simultaneously adopts the sputtering and electroplating process to deposit the metal shielding layer, thereby not only accelerating the process procedure, but also improving the bonding tightness of the metal shielding layer, and further improving the ductility and the shielding effectiveness of the electromagnetic shielding film.
In some embodiments, the step of depositing the metal material on the surface of the insulating layer away from the carrier layer by sputtering and electroplating comprises: and depositing the metal material on the surface of the insulating layer, which is far away from the carrier layer, in a sputtering and electroplating mode sequentially. In other embodiments, the step of depositing the metal material on the surface of the insulating layer away from the carrier layer by sputtering and electroplating comprises: and depositing the metal material on the surface of the insulating layer, which is far away from the carrier layer, by means of sputtering, electroplating and sputtering in sequence. The embodiment of the invention adopts the processes of sputtering firstly and then electroplating, or sputtering firstly and depositing the metal material in the sequential electroplating and sputtering processes, and the metal material is tightly combined with the insulating layer by the sputtering process, so that the combination performance between the film layers is better, and the film layers are more compact; and then electroplating is carried out on the metal film layer obtained by sputtering, so that the metal material is quickly deposited, the process is accelerated, the metal raw material is saved, and meanwhile, the problems that the process is slow due to the sputtering deposition of the single material, the bonding force with the insulating layer is poor due to the single electroplating deposition, the film layers are easy to fall off, and the compactness in the metal shielding layer is poor are solved. The thickness of the metal material deposited by sputtering and electroplating is not particularly limited in the embodiments of the present invention, as long as the above technical effects can be achieved.
In some embodiments, the step of depositing the metal material on the surface of the insulating layer away from the carrier layer by sputtering and electroplating comprises: sputtering and depositing the metal material on the surface of the insulating layer by adopting vacuum sputtering to obtain a metal sputtering layer; and depositing a metal piercing structure on the surface of the other side, far away from the insulating layer, of the metal sputtering layer by adopting acid copper electroplating treatment to obtain a metal shielding layer. According to the embodiment of the invention, the metal sputtering layer is obtained by vacuum sputtering, the metal layer and the insulating layer are tightly combined, the thickness of the metal sputtering layer is 1-5 microns, the electromagnetic shielding requirement can be directly met, then the surface of the metal sputtering layer is subjected to roughening treatment through acid copper electroplating treatment, and a metal piercing structure is formed on the surface of the metal sputtering layer. The conductive adhesive layer is deposited in the metal puncture structure, and the puncture structure is used for puncturing the conductive adhesive layer to realize puncturing the structure and waiting to carry out the electric connection between the electromagnetic shielding's the device, directly switch on the electromagnetic wave on the device to the metal shielding layer inside through puncturing the structure, realize the absorption dissipation to the electromagnetic wave, it is effectual to shield. In addition, because the device that pierces through the structure in the metallic shield layer and directly impales the conductive adhesive layer and wait to carry out the electromagnetic shield contacts, the switching on of electromagnetism on the device need not to pass through the conductive adhesive layer as middle bridging to greatly reduced the whole thickness of electromagnetic shield membrane, and the metallic shield layer that has the structure of impaling has promoted the resistant bending nature of metallic shield layer for the metallic shield layer that does not pierce through the structure of equal thickness, makes the electromagnetic shield membrane more be applicable to devices such as flexible circuit board.
In some embodiments, the step of depositing the metal material on the surface of the insulating layer away from the carrier layer by sputtering and electroplating comprises: sputtering and depositing the metal material on the surface of the insulating layer by adopting vacuum sputtering to obtain a metal sputtering layer; adopting alkali copper electroplating treatment to deposit a metal material on the surface of the other side of the metal sputtering layer, which is far away from the insulating layer, so as to obtain a metal electroplated layer; and depositing a metal piercing structure on the surface of the other side of the metal electroplated layer, which is far away from the metal sputtering layer, by adopting acid copper electroplating treatment to obtain the metal shielding layer. According to the embodiment of the invention, the metal material is deposited by vacuum sputtering to enable the metal layer and the insulating layer to be tightly combined, then the metal layer is quickly thickened by alkali copper electroplating treatment, the process time is shortened, and then the surface of the metal layer is coarsened by acid copper electroplating treatment to form the metal piercing structure.
In some embodiments, the step of depositing the metal material on the surface of the insulating layer away from the carrier layer by sputtering and electroplating comprises: vacuum sputtering is adopted, and the vacuum degree is not more than 1 x 10-3Pa, sputtering speed of 0.5-5m/min, sputtering current of 3-7A and inert gas flow of 30-60ppm, and sputtering and depositing the metal material on the surface of the insulating layer to obtain a metal sputtering layer; and carrying out acid copper electroplating treatment by adopting a mixed solution of copper sulfate with the concentration of 80-120 g/L and anhydrous copper sulfate with the concentration of 80-120 g/L, and depositing a metal piercing structure on the surface of the other side, far away from the insulating layer, of the metal sputtering layer to obtain the metal shielding layer.
In some embodiments, the step of depositing the metal material on the surface of the insulating layer away from the carrier layer by sputtering and electroplating comprises: vacuum sputtering is adopted, and the vacuum degree is not more than 1 x 10-3Pa, sputtering speed of 0.5-5m/min, sputtering current of 3-7A and inert gas flow of 30-60ppm, and sputtering and depositing the metal material on the surface of the insulating layer to obtain a metal sputtering layer; adopting a mixed solution of copper pyrophosphate with the concentration of 30-100 g/L and potassium pyrophosphate with the concentration of 200-400 g/L, wherein the pH of the mixed solution is 8-10 to carry out alkali copper electroplating treatment, and the metal sputtering layer is far away from the insulating layerDepositing a metal material on the surface of the other side of the substrate to obtain a metal electroplated layer; and carrying out acid copper electroplating treatment by adopting a mixed solution of copper sulfate with the concentration of 80-120 g/L and anhydrous copper sulfate with the concentration of 80-120 g/L, and depositing a metal piercing structure on the surface of the other side, far away from the insulating layer, of the metal sputtering layer to obtain the metal shielding layer.
In some embodiments, the piercing structure comprises: at least one of a peak structure, a branch structure and a circular arc structure. In some embodiments, as shown in fig. 3, the metal shielding layer has a peak structure, wherein the peak structure can penetrate through the conductive adhesive layer and directly contact the device waiting for electromagnetic shielding on the circuit board. In some embodiments, as shown in fig. 4, the metal shielding layer has a dendritic structure, wherein the dendritic structure can pierce through the conductive adhesive layer to directly contact the device to be electromagnetically shielded on the circuit board. As shown in fig. 5, the metal shielding layer has a circular arc structure, wherein the circular arc structure can penetrate through the conductive adhesive layer to directly contact with a device waiting for electromagnetic shielding on the circuit board. In other embodiments, the metal shielding layer has a peak structure, a branch structure and a circular arc structure, and the peak structure, the branch structure and the circular arc structure pierce through the conductive adhesive layer to contact with a device waiting for electromagnetic shielding of the circuit board, so as to conduct, absorb and dissipate electromagnetic waves.
In some embodiments, the perforation spacing in the piercing structure is less than 1 micron. According to the embodiment of the invention, the gap distance of the piercing structure in the metal shielding layer is less than 1 micron, and when the piercing structure is a peak structure, the gap distance is the maximum distance between two adjacent peaks; when the piercing structure is a dendritic structure, the gap distance is the maximum distance between two adjacent dendritic protrusions; when the puncturing structure is a circular arc structure, the gap distance is the maximum distance between two adjacent circular arcs. According to the embodiment of the invention, the puncturing structure with the gap spacing smaller than 1 micron effectively ensures the puncturing contact density of the puncturing structure in the metal shielding layer and devices such as a circuit board and the like, and further ensures the electromagnetic shielding effectiveness of the electromagnetic shielding film on the devices.
In some embodiments, the thickness of the metal shield layer is 4-6 microns, wherein the height of the piercing structures is 50-60% of the overall thickness of the metal shield layer. According to the embodiment of the invention, the overall thickness of the metal shielding layer is 4-6 microns, wherein the height of the piercing structure accounts for 50% -60% of the overall thickness of the metal shielding layer, and on one hand, the piercing structure with the height can ensure that the piercing structure can achieve a good absorption and conduction effect on electromagnetic waves on devices after piercing the conductive adhesive layer to be contacted with the devices such as a circuit board and the like, so that the electromagnetic waves are transferred into the metal shielding layer in time to be dissipated; on the other hand, the thickness of the metal substrate layer in the metal shielding layer not only ensures the electromagnetic dissipation effect, but also ensures the ductility and the flexibility of the metal shielding layer.
In some embodiments, the conductive adhesive layer is filled in the gap of the piercing structure, the thickness of the conductive adhesive layer is higher than the height of the piercing structure, and the thickness of the conductive adhesive layer higher than the piercing structure is not more than 0.1 micrometer of the height of the piercing structure. According to the embodiment of the invention, the conductive adhesive layer is filled in the gap of the piercing structure, so that the stability of the piercing structure is maintained, and the piercing structure is prevented from being deformed under the action of overlarge external force in the subsequent use process to influence the electromagnetic conduction shielding efficiency; and the metal shielding layer and the conductive adhesive layer are combined into a whole, so that the integral thickness of the electromagnetic shielding film is obviously reduced, the electromagnetic shielding film is more suitable for flexible devices, and the application is more flexible and convenient. The thickness of the conductive adhesive layer is higher than the height of the piercing structure and is not more than 0.1 micrometer of the height of the piercing structure, and the thickness effectively ensures that the piercing structure in the metal shielding layer can pierce the conductive adhesive layer when being attached through external pressure in use and is stably combined with devices such as a circuit board and the like.
In some embodiments, when the conductive adhesive layer is prepared, a 100-300 mesh grid roller is used for coating 0.2-0.5um each time, so that the conductive adhesive layer is uniformly filled in gaps of the piercing structure, holes are prevented from being formed, and the filling effect is better. Then curing the resin at the drying tunnel temperature of 40-60-60-80-120 ℃ and 120 ℃, wherein the drying tunnel temperature of low temperature and slow temperature rise is adopted, so that the filled resin has enough time to fully diffuse and flow into the gaps of the piercing structure, the gaps are better filled, and meanwhile, the solvent is prevented from volatilizing too fast/curing too fast, air holes are avoided, and the conductive adhesive layer is ensured to have better film-forming property.
In a further embodiment, the metal material comprises silicon and is selected from the group consisting of: at least one metal selected from gold, silver, nickel, chromium, copper, boron, beryllium, aluminum, tin and titanium. According to the embodiment of the invention, the metal material is matched with materials such as gold, silver, nickel, chromium, copper, boron, beryllium, aluminum, tin, titanium and the like through insulating silicon, so that the bonding force between the metal shielding layer and the insulating layer is further increased. In some embodiments, the metal material includes silicon and gold, silver or their alloy material, and the gold and silver material has excellent conductivity and good electromagnetic shielding effect.
In a further embodiment, the thickness of the metallic shielding layer is 1-5 microns. The metal shielding layer is prepared by a mixed process of sputtering and electroplating, the film layer is tightly combined, the ductility is good, the electromagnetic shielding effect can be better realized when the thickness of the metal shielding layer is 1-5 microns, the film layer is thin, the ductility is good, the metal shielding layer is more suitable for flexible devices, and the application is flexible and convenient.
In some embodiments, the step of depositing the insulating paste on the carrier layer to obtain an insulating layer further comprises: obtaining PFA resin, and depositing the PFA resin on the surface of one side of the insulating layer, which is far away from the carrier layer, to obtain a PFA resin layer; and obtaining a metal material, and depositing the metal material on the surface of one side, far away from the insulating layer, of the PFA resin layer in a sputtering and electroplating mode to obtain a metal shielding layer. According to the embodiment of the invention, the PFA resin layer is arranged between the insulating layer and the metal shielding layer, so that the PFA layer with strong fusion cohesiveness, chemical corrosion resistance, high tensile strength, good electrical property and stable electrical insulation property is directly arranged in the electromagnetic shielding film as the film layer, and the dielectric loss and the dielectric constant of the electromagnetic shielding film can be effectively reduced. In some embodiments, the thickness of the PFA resin layer is 1-5 microns.
In some embodiments, when a PFA resin layer is disposed between the insulating layer and the metal shield layer, the insulating paste is selected from: at least one of polyimide slurry, tetrafluoroethylene slurry, polyphenylene sulfide slurry, polyamide slurry, ethylene-tetrafluoroethylene copolymer slurry, polyetherimide slurry and polyethylene naphthalate slurry. The solvent in the insulating slurry is selected from: at least one polar solvent selected from N-methyl-2-pyrrolidone, gamma-butyrolactone, N-dimethylformamide, N-dimethylacetamide and dimethyl sulfoxide; the viscosity of the insulating paste is 2000-10000 cps.
In some specific embodiments, the insulating paste is matte black polyimide paste, so that the Flexible Printed Circuit (FPC) can be better shielded.
Specifically, in step S30, a conductive adhesive material is obtained, and the conductive adhesive material is deposited on a surface of the metal shielding layer, which is far away from the insulating layer, so as to obtain a conductive adhesive layer. According to the embodiment of the invention, the conductive adhesive layer is deposited on the surface of the metal shielding layer, and the electromagnetic shielding film is attached to the device with the shielding or the circuit board through the conductive adhesive layer when in use, so that the electromagnetism in the electromagnetic shielding film is conducted to the metal shielding layer for dissipation.
In a further embodiment, the conductive adhesive material includes a resin and a conductive material.
In some embodiments, the resin comprises the following components in percentage by mass, based on 100% of the total mass of the resin:
Figure BDA0002262675390000131
the resin of the conductive adhesive comprises 30-45% of rubber, 10-20% of bisphenol epoxy resin, 1-2% of an accelerator, 1-2% of an antioxidant and 31-48% of a diluent, wherein the rubber component ensures the flexibility of the conductive adhesive layer, and if the content is too high, the product is not soft enough; the content of the bisphenol epoxy resin can increase the adhesive force between the conductive adhesive layer and devices such as a flexible circuit board and the like, and can enhance the corrosion resistance, the mechanical strength and the like of the conductive material, and if the content is too high, the conductive adhesive layer is easy to foam; the antioxidant can prevent the conductive adhesive layer from being oxidized, prolong the service life and enhance the tolerance; the diluent dissolves and disperses the components in the resin to form mixed slurry with proper viscosity, and is beneficial to dispersing the conductive material in the resin to form electric conductionConductive paste with uniformly dispersed materials.
In some embodiments, the bisphenol epoxy resin is model 901 and XD-1000; 2E4MZ-CN (mitsunobu) is used as the accelerator; the antioxidant adopts E1010 PES material; MEK butanone or MCS methoxyethanol ether is used as a diluent.
In a further embodiment, the conductive material is selected from: at least one of silver-coated copper, silver-coated nickel, graphene and nanowires. The conductive materials adopted by the embodiment of the invention have better electromagnetic conduction effect, and can conduct the electromagnetism on devices such as a flexible circuit board and the like to the metal shielding layer in time so as to dissipate the electromagnetism. The content of the conductive material in the conductive layer is not particularly limited in the embodiments of the present invention, as long as the conductive layer can perform a good electromagnetic conduction function, and in some embodiments, the content of the conductive material in the conductive adhesive layer is 5 to 20%
In a further embodiment, the conductive material has a morphology including at least one of dendritic, spherical, flake, and irregular shapes. The conductive material in the embodiment of the invention can be dendritic, spherical or flaky silver-coated copper, silver-coated nickel, graphene and nanowires, wherein the conductive material in each form has the following conductive performance: dendritic > irregular > globular > flaky.
In a further embodiment, the thickness of the conductive adhesive layer is 2-5 microns, the conductive adhesive layer containing the resin and the conductive material is uniformly dispersed in the resin, the conductive material is in a shape of a branch, an irregular shape, a sphere or a sheet, the conductive material is good in conductivity, and the electromagnetism on the flexible circuit board can be timely guided into the metal shielding layer to dissipate the electromagnetism, so that the shielding effect is achieved. The thickness of the conductive adhesive layer is only 2-5 microns, the expected effect can be better achieved, the electromagnetic conduction effect is guaranteed, meanwhile, the whole thickness of the shielding film is reduced, and the flexible device is more suitable for being applied.
The embodiment of the invention also provides an electromagnetic wave shielding film, which is prepared by the method and comprises a carrier layer, an insulating layer, a metal shielding layer and a conductive adhesive layer which are sequentially stacked, wherein the insulating layer contains PFA resin; alternatively, the first and second electrodes may be,
the electromagnetic wave shielding film comprises a carrier layer, an insulating layer, a PFA resin layer, a metal shielding layer and a conductive adhesive layer which are sequentially stacked.
The electromagnetic wave shielding film provided by the embodiment of the invention is prepared by the method of the embodiment, so that the whole film layer of the prepared electromagnetic wave shielding film is thinner and more suitable for flexible devices, and the film layers are tightly combined, the extensibility is good, the electromagnetic transmission is fast, the loss is low, and the shielding efficiency is better.
As shown in the attached drawing 1, the electromagnetic wave shielding film comprises a carrier layer, an insulating layer, a metal shielding layer and a conductive adhesive layer which are sequentially stacked, wherein the insulating layer contains PFA resin, the conductive adhesive layer is kept away from one side surface of the metal shielding layer and further comprises a release layer for protecting the conductive adhesive layer and preventing the conductive adhesive layer from being polluted, and the release layer is peeled off to paste the conductive adhesive layer to devices such as a flexible circuit board for electromagnetic shielding during use.
As shown in fig. 2, the electromagnetic wave shielding film includes a carrier layer, an insulating layer, a PFA resin layer, a metal shielding layer, and a conductive adhesive layer, which are sequentially stacked, and a release layer is further included on a surface of one side of the conductive adhesive layer, which is far away from the metal shielding layer.
In order to make the above implementation details and operations of the present invention clearly understood by those skilled in the art and to make the improvement of the electromagnetic shielding film and the manufacturing method thereof according to the embodiments of the present invention remarkably manifest, the above technical solution is exemplified by a plurality of embodiments as follows.
Example 1
An electromagnetic shielding film comprising the steps of:
firstly, obtaining a mixed solution of a carrier layer, PFA resin and matte polyimide, and depositing the mixed solution of the PFA resin and the matte polyimide on the carrier layer to obtain an insulating layer with the thickness of 3 microns;
② obtaining silicon and gold-silver alloy, and making silicon and gold-silver alloy be in vacuum degree not greater than 1 x 10-3Pa, the sputtering speed is 0.5-5m/min, the sputtering current is 3-7A,sputtering 1 micron in vacuum under the condition that the flow of inert gas is 30-60ppm, and then electroplating to 5 microns to obtain a metal shielding layer with the thickness of 5 microns;
thirdly, obtaining a conductive adhesive material, and depositing the conductive adhesive material on the surface of one side of the metal shielding layer far away from the insulating layer to obtain a conductive adhesive layer with the thickness of 5 microns; the conductive adhesive comprises resin, a conductive adhesive layer and a conductive material, wherein the resin of the conductive adhesive comprises 30-45% of rubber, 10-20% of bisphenol epoxy resin, 1-2% of an accelerator, 1-2% of an antioxidant and 31-48% of a diluent, and the content of the conductive material in the conductive adhesive layer is 5-20%.
Comparative example 1
An electromagnetic shielding film comprising the steps of:
firstly, obtaining a carrier layer and a matte polyimide liquid, and depositing the matte polyimide liquid on the carrier layer to obtain an insulating layer with the thickness of 3 microns;
② obtaining silicon and gold-silver alloy, and making silicon and gold-silver alloy be in vacuum degree not greater than 1 x 10-3Pa, sputtering at a speed of 0.5-5m/min, sputtering at a current of 3-7A, performing vacuum sputtering at an inert gas flow rate of 30-60ppm for 1 micron, and electroplating to 5 microns to obtain a metal shielding layer with a thickness of 5 microns;
thirdly, obtaining a conductive adhesive material, and depositing the conductive adhesive material on the surface of one side of the metal shielding layer far away from the insulating layer to obtain a conductive adhesive layer with the thickness of 5 microns; the conductive adhesive comprises resin, a conductive adhesive layer and a conductive material, wherein the resin of the conductive adhesive comprises 30-45% of rubber, 10-20% of bisphenol epoxy resin, 1-2% of an accelerator, 1-2% of an antioxidant and 31-48% of a diluent, and the content of the conductive material in the conductive adhesive layer is 5-20%.
Comparative example 2
An electromagnetic shielding film comprising the steps of:
firstly, obtaining a mixed solution of a carrier layer, PFA resin and matte polyimide, and depositing the mixed solution of the PFA resin and the matte polyimide on the carrier layer to obtain an insulating layer with the thickness of 3 microns;
obtaining silicon and gold-silver alloy, and depositing the silicon and the gold-silver alloy to 5 microns in an electroplating mode to obtain a metal shielding layer with the thickness of 5 microns;
thirdly, obtaining a conductive adhesive material, and depositing the conductive adhesive material on the surface of one side of the metal shielding layer far away from the insulating layer to obtain a conductive adhesive layer with the thickness of 5 microns; the conductive adhesive comprises resin, a conductive adhesive layer and a conductive material, wherein the resin of the conductive adhesive comprises 30-45% of rubber, 10-20% of bisphenol epoxy resin, 1-2% of an accelerator, 1-2% of an antioxidant and 31-48% of a diluent, and the content of the conductive material in the conductive adhesive layer is 5-20%.
Comparative example 3
An electromagnetic shielding film comprising the steps of:
firstly, obtaining a carrier layer and a commercially formed black glue insulating layer, and attaching the black glue insulating layer on the carrier layer, wherein the thickness of the insulating layer is 8 microns;
② obtaining silicon and gold-silver alloy, and making silicon and gold-silver alloy be in vacuum degree not greater than 1 x 10-3Pa, sputtering at a speed of 0.5-5m/min, sputtering at a current of 3-7A, performing vacuum sputtering at an inert gas flow rate of 30-60ppm for 1 micron, and electroplating to 5 microns to obtain a metal shielding layer with a thickness of 5 microns;
thirdly, obtaining a conductive adhesive material, and depositing the conductive adhesive material on the surface of one side of the metal shielding layer far away from the insulating layer to obtain a conductive adhesive layer with the thickness of 5 microns; the conductive adhesive comprises resin, a conductive adhesive layer and a conductive material, wherein the resin of the conductive adhesive comprises 30-45% of rubber, 10-20% of bisphenol epoxy resin, 1-2% of an accelerator, 1-2% of an antioxidant and 31-48% of a diluent, and the content of the conductive material in the conductive adhesive layer is 5-20%.
Further, in order to verify the advancement of the electromagnetic shielding film and the preparation method thereof prepared by the embodiment of the present invention, performance tests were performed by the embodiment of the present invention.
Test example 1
The electromagnetic shielding film prepared in example 1 was tested for shielding performance, tear film thickness, thickness after press-fitting, surface resistance, ground resistance, reflow soldering resistance, proportional strength to PI, strength to copper glass, dimensional stability, insulation, dielectric loss, dielectric constant, water absorption, oxidation resistance, surface tension of insulating layer, pencil hardness test, chemical resistance, etc., and the test method, test standard, test conditions and test results are shown in table 1 below:
TABLE 1
Figure BDA0002262675390000171
Figure BDA0002262675390000181
From the test results, the electromagnetic shielding film prepared in embodiment 1 of the invention has the advantages of good shielding effectiveness, low overall thickness, good electromagnetic conductivity, good film stability, good insulation, good chemical resistance, oxidation resistance and long service life.
Test example 2
Comparative tests of dielectric loss and dielectric constant of the electromagnetic shielding films of example 1 and comparative example 1 according to IPC-TM650 NO 2.5.5.3 were carried out, and the results are shown in table 2 below:
TABLE 2
Example 1 Comparative example 1
Dielectric loss/DF 0.0009 0.005
Dielectric constant/DK 2.26 2.5
From the above test results, it can be seen that the dielectric loss and the dielectric constant of the electromagnetic shielding film prepared in example 1 of the present invention are significantly reduced after the PFA resin is introduced into the insulating layer, compared to the shielding film prepared in comparative example 1 without adding PFA resin, the lower the dielectric constant is, the weaker the electric polarization is, and the smaller the external electric field weakening is.
Test example 3
The bonding performance and film layer performance of the metal shielding layer deposited by sputtering and then electroplating in example 1 and the metal shielding layer deposited by electroplating only in comparative example 2 were tested according to IPC-TM650-2.4.9, and the test results are shown in table 3 below:
TABLE 3
Test items Example 1 Comparative example 2
Binding force 0.7-1.0N/mm 0.1-0.3N/mm
Tensile strength 70mpa 50mpa
Compactness Non-light-transmitting point With light-transmitting point
Bending resistance 10 ten thousand times 7 ten thousand times
Ductility of the alloy 60％ 30％
From the test results, the bonding force of the electromagnetic shield prepared by the method that the metal shielding layer is deposited by sputtering and then electroplating in the embodiment 1 of the invention is obviously higher than that of the metal shielding layer deposited by electroplating in the comparative example 1, and the compactness, the bending resistance and the ductility of the film layer are all better than those of the comparative example 1.
Test example 4
The invention tests the properties of the insulating layer prepared by coating deposition on the support layer in example 1 and of comparative example 3 directly using an already formed insulating layer of black glue applied to the support layer, the results of which are shown in table 4 below:
TABLE 4
Test items Example 1 Comparative example 3
Thickness (mm) 3±2 6±2
Tensile strength (mpa) 100-130 30-50
Insulating (omega) >1*10E8 >1*10E6
Elongation percentage 50-70 20-30
Curing time 80℃10h 80℃120h
Dyne value 40 32
From the above test results, it can be seen that the insulating layer prepared in example 1 of the present invention directly deposited on the carrier layer by coating has a thinner thickness, higher tensile strength, better insulation, higher elongation, longer curing time, higher dyne value and higher surface tension, compared to the insulating layer prepared in comparative example 1 using a commercially formed black gel.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (10)

1. A method for producing an electromagnetic wave shielding film, comprising the steps of:
obtaining a carrier layer and insulating slurry, and depositing the insulating slurry on the carrier layer to obtain an insulating layer;
obtaining a metal material, and depositing the metal material on the surface of one side, far away from the carrier layer, of the insulating layer in a sputtering and electroplating mode to obtain a metal shielding layer;
and obtaining a conductive adhesive material, and depositing the conductive adhesive material on the surface of one side of the metal shielding layer, which is far away from the insulating layer, to obtain a conductive adhesive layer.
2. The method for manufacturing an electromagnetic wave shielding film according to claim 1, wherein the step of depositing the metal material on the surface of the insulating layer on the side away from the carrier layer by means of sputtering and electroplating comprises:
depositing the metal material on the surface of one side, away from the carrier layer, of the insulating layer in sequence by sputtering and electroplating; alternatively, the first and second electrodes may be,
and depositing the metal material on the surface of the insulating layer, which is far away from the carrier layer, by means of sputtering, electroplating and sputtering in sequence.
3. The method for manufacturing an electromagnetic wave shielding film according to claim 2, wherein the step of depositing the metal material on the surface of the insulating layer on the side away from the carrier layer by means of sputtering and electroplating comprises:
sputtering and depositing the metal material on the surface of the insulating layer by adopting vacuum sputtering to obtain a metal sputtering layer;
depositing a metal piercing structure on the surface of the other side, far away from the insulating layer, of the metal sputtering layer by adopting acid copper electroplating treatment to obtain a metal shielding layer; alternatively, the first and second electrodes may be,
sputtering and depositing the metal material on the surface of the insulating layer by adopting vacuum sputtering to obtain a metal sputtering layer;
adopting alkali copper electroplating treatment to deposit a metal material on the surface of the other side of the metal sputtering layer, which is far away from the insulating layer, so as to obtain a metal electroplated layer;
and depositing a metal piercing structure on the surface of the other side of the metal electroplated layer, which is far away from the metal sputtering layer, by adopting acid copper electroplating treatment to obtain the metal shielding layer.
4. The method for producing an electromagnetic wave shielding film according to claim 3, wherein the vacuum sputtering is performed in a degree of vacuum of not more than 1 x 10-3Pa, speed of sputtering0.5-5m/min, sputtering current of 3-7A, inert gas flow of 30-60 ppm; and/or the presence of a gas in the gas,
the acid copper electroplating treatment adopts a mixed solution of copper sulfate with the concentration of 80-120 g/L and anhydrous copper sulfate with the concentration of 80-120 g/L; and/or the presence of a gas in the gas,
the alkali copper electroplating treatment adopts a mixed solution of copper pyrophosphate with the concentration of 30-100 g/L and potassium pyrophosphate with the concentration of 200-400 g/L, and the pH value of the mixed solution is 8-10.
5. The method for manufacturing an electromagnetic wave shielding film according to any one of claims 1 to 4, wherein the insulating paste comprises PFA resin and an additive selected from the group consisting of: at least one of polyimide, tetrafluoroethylene, polyphenylene sulfide, polyamide, ethylene-tetrafluoroethylene copolymer, polyetherimide and polyethylene naphthalate; and/or the presence of a gas in the gas,
the solvent in the insulating slurry is selected from: at least one of N-methyl-2-pyrrolidone, gamma-butyrolactone, N-dimethylformamide, N-dimethylacetamide and dimethyl sulfoxide; and/or the presence of a gas in the gas,
the viscosity of the insulating paste is 2000-10000 cps.
6. The method for manufacturing an electromagnetic wave-shielding film as claimed in any one of claims 1 to 4, wherein the step of depositing the insulating paste on the carrier layer to obtain an insulating layer further comprises: obtaining PFA resin, and depositing the PFA resin on the surface of one side of the insulating layer, which is far away from the carrier layer, to obtain a PFA resin layer;
and obtaining a metal material, and depositing the metal material on the surface of one side, far away from the insulating layer, of the PFA resin layer in a sputtering and electroplating mode to obtain a metal shielding layer.
7. The method for preparing an electromagnetic wave-shielding film according to claim 6, wherein the thickness of the PFA resin layer is 1 to 10 μm; and/or the presence of a gas in the gas,
the insulating paste is selected from: at least one of polyimide slurry, tetrafluoroethylene slurry, polyphenylene sulfide slurry, polyamide slurry, ethylene-tetrafluoroethylene copolymer slurry, polyetherimide slurry and polyethylene naphthalate slurry; and/or the presence of a gas in the gas,
the solvent in the insulating slurry is selected from: at least one polar solvent selected from N-methyl-2-pyrrolidone, gamma-butyrolactone, N-dimethylformamide, N-dimethylacetamide and dimethyl sulfoxide; and/or the presence of a gas in the gas,
the viscosity of the insulating paste is 2000-10000 cps.
8. The method for manufacturing an electromagnetic wave-shielding film according to any one of claims 1 to 4 or 7, wherein the thickness of the insulating layer is 1 to 5 μm; and/or the presence of a gas in the gas,
the thickness of the metal shielding layer is 1-5 microns; and/or the presence of a gas in the gas,
the thickness of the conductive adhesive layer is 2-5 microns; and/or the presence of a gas in the gas,
the metal material comprises silicon and a metal selected from: at least one of gold, silver, nickel, chromium, copper, boron, beryllium, aluminum, tin and titanium; and/or the presence of a gas in the gas,
the conductive adhesive material includes a resin and a conductive material.
9. The method for manufacturing an electromagnetic wave-shielding film according to claim 8, wherein the resin comprises the following components in mass% based on 100% by mass of the total mass of the resin:
Figure FDA0002262675380000031
the form of the conductive material comprises at least one of dendritic form, spherical form, sheet form and irregular form; and/or the presence of a gas in the gas,
the conductive material is selected from: at least one of silver-coated copper, silver-coated nickel, graphene and nanowires; and/or the presence of a gas in the gas,
the content of the conductive material in the conductive adhesive layer is 5-20%.
10. An electromagnetic wave shielding film, which is produced by the method according to any one of claims 1 to 9, and which comprises a carrier layer, an insulating layer, a metal shielding layer and a conductive adhesive layer, which are sequentially stacked, wherein the insulating layer contains a PFA resin;
alternatively, the first and second electrodes may be,
the electromagnetic wave shielding film comprises a carrier layer, an insulating layer, a PFA resin layer, a metal shielding layer and a conductive adhesive layer which are sequentially stacked.
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Application publication date: 20201027