CN111825444B - Method for introducing columnar defects into ex-situ high-temperature superconducting thin film - Google Patents
Method for introducing columnar defects into ex-situ high-temperature superconducting thin film Download PDFInfo
- Publication number
- CN111825444B CN111825444B CN202010770668.XA CN202010770668A CN111825444B CN 111825444 B CN111825444 B CN 111825444B CN 202010770668 A CN202010770668 A CN 202010770668A CN 111825444 B CN111825444 B CN 111825444B
- Authority
- CN
- China
- Prior art keywords
- temperature
- film
- treatment
- oxygen
- introducing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000007547 defect Effects 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000011066 ex-situ storage Methods 0.000 title claims abstract description 14
- 239000010409 thin film Substances 0.000 title claims description 13
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 claims abstract description 46
- 239000010408 film Substances 0.000 claims description 71
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 24
- 239000001301 oxygen Substances 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 18
- 239000002243 precursor Substances 0.000 claims description 14
- 238000004321 preservation Methods 0.000 claims description 13
- 238000000197 pyrolysis Methods 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 claims description 8
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 claims description 8
- NFSAPTWLWWYADB-UHFFFAOYSA-N n,n-dimethyl-1-phenylethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=CC=C1 NFSAPTWLWWYADB-UHFFFAOYSA-N 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 8
- 238000002425 crystallisation Methods 0.000 claims description 7
- 230000008025 crystallization Effects 0.000 claims description 7
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 6
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 238000004080 punching Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical compound [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 claims description 4
- 150000001768 cations Chemical class 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000004821 distillation Methods 0.000 claims description 3
- 229910000856 hastalloy Inorganic materials 0.000 claims description 3
- 235000019260 propionic acid Nutrition 0.000 claims description 3
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 6
- 239000012467 final product Substances 0.000 abstract description 3
- 239000013067 intermediate product Substances 0.000 abstract description 3
- 239000002245 particle Substances 0.000 description 10
- 239000002887 superconductor Substances 0.000 description 9
- 239000002105 nanoparticle Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002135 nanosheet Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
- C04B35/4504—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing rare earth oxides
- C04B35/4508—Type 1-2-3
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62625—Wet mixtures
- C04B35/6264—Mixing media, e.g. organic solvents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0324—Processes for depositing or forming copper oxide superconductor layers from a solution
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0828—Introducing flux pinning centres
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3281—Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/449—Organic acids, e.g. EDTA, citrate, acetate, oxalate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6565—Cooling rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
- C04B2235/6584—Oxygen containing atmosphere, e.g. with changing oxygen pressures at an oxygen percentage below that of air
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
- C04B2235/6585—Oxygen containing atmosphere, e.g. with changing oxygen pressures at an oxygen percentage above that of air
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6588—Water vapor containing atmospheres
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
- C04B2235/662—Annealing after sintering
- C04B2235/663—Oxidative annealing
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/665—Local sintering, e.g. laser sintering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention relates to a method for introducing columnar defects into an ex-situ high-temperature superconducting film, which mainly solves the technical problem that the energy level required for manufacturing the columnar defects by laser irradiation is very high. The invention creatively provides a method for introducing columnar defects through femtosecond laser irradiation in the phase forming intermediate process of a YBCO superconducting film strip. Namely, various types of irradiation in the vertical direction on the surface of an intermediate product are carried out in the preparation process, so that the defect of preferred orientation is generated, and further, the columnar defect is introduced into a final product. The practical application of the YBCO superconducting tape is improved.
Description
Technical Field
The invention relates to a method for introducing columnar defects into an ex-situ high-temperature superconducting film, which is characterized in that femtosecond laser irradiation in the vertical direction of the surface of an intermediate product is carried out in the preparation process to generate preferentially oriented defects, and then the columnar defects are introduced into a final product, and belongs to the field of material design and processing.
Background
Yttrium barium copper oxide (YBa) 2 Cu 3 O 7-δ YBCO) high-temperature superconducting films have been the focus of research in the field of practical superconductivity due to their excellent performance and potential price advantage. However, the practical application of the current YBCO superconducting thin film still faces two problems: firstly, a Josephson type weak connection phenomenon exists between crystal boundaries of a YBCO superconducting film, so that the inside of a superconductor crystal grain and the crystal boundaries have different current carrying capacities, and the improvement of critical current density is limited; secondly, the application of the YBCO superconducting film in many fields is limited by the lower critical current density under an external magnetic field, so that the improvement of the field performance is necessary.
As a second type of superconductor, YBCO is exposed to an external magnetic fieldH Above the lower critical field, a mixed state with magnetic flux eddy lines is present, the movement of the eddy lines under the Lorentz force causing a superconductor critical current density ( Jc) A sharp drop in. For an undoped YBCO superconductor:ab the presence of intrinsic pinning centers in the plane,J(θ) Will be atH‖abA strong peak value exists when the surface is flat; for thec The axis, due to the lack of corresponding intrinsic pinning centers,H‖cin the axial directionJcIt is much smaller; so in the undoped YBCO thin filmThe critical current density exhibits a large anisotropy.
In order to improve the electric transport performance of the YBCO superconducting film in an external magnetic field, researchers introduce a magnetic flux pinning center into the YBCO superconducting film by manual means for pinning the movement of a magnetic flux vortex line. The Artificial Pinning Centers (APCs) are classified into: (1) zero-dimensional APCs, oxygen vacancies, element substitution and other point defects existing in a superconductor; (2) the one-dimensional APCs comprise linear dislocation or artificially formed nano-columns which appear in the superconductor, (3) the two-dimensional APCs have defects that stacking faults, nano-sheets, twin crystal boundaries and the like which exist in the superconductor can become pinning centers, and (4) the three-dimensional APCs take nano-scale heterogeneous particles which are dispersedly distributed in the superconductor as the main pinning centers.
The method for introducing the artificial pinning center comprises the following steps: (1) high-energy heavy particle beam irradiates high-temperature YBCO superconductor to generatecLine defects of axial alignment; (2) adding second phase nanoparticles including BaMO 3 (M = Zr, Hf, Sm, etc.) perovskite structure compounds; (3) depositing a layer of nano particles on a metal substrate and then epitaxially growing YBCO. Currently, the addition of second phase nanoparticles is an effective means. However, whether the in-situ method or the ex-situ method is adopted to add the second phase nano particles, firstly, the preparation and growth of the YBCO film can be directly influenced, the technological parameters need to be adjusted in time, and secondly, the size and the distribution of the nano particles have great influence on the performance of the YBCO superconducting film and are sensitive to the preparation process. High-energy heavy particle beam radiation is used as a pure and additive-free means, and is to directly carry out heavy particle bombardment on a well-grown YBCO superconducting film to manufacture a film parallel to the surface of the filmcSmall size in the axial direction and uniform distribution of columnar physical defects. Research shows that the defects formed by irradiation can be effectively improvedH‖cIn the axial directionJcAnd the practical application potential value of the YBCO coating conductor is improved.
In the process of preparing the YBCO superconducting tape by a metal organic solution chemical method (TFA-MOD), the raw materials are subjected to the steps of precursor liquid preparation, low-temperature coating and pyrolysis, medium-temperature presintering, high-temperature phase-forming sintering, oxygen absorption, silver-plated protective layer, packaging and the like respectively, and finally the YBCO high-temperature superconducting tape which can be used commercially is formed. In the whole process, the low-temperature coating film shrinks by 100% from colloid to the pyrolytic film; after the intermediate-temperature pre-sintering, the film shrinks by 10 percent again; and finally, sintering at high temperature, and enabling the film to shrink by 50% of the thickness again. In the means of introducing artificial pinning centers, the surface modification of the substrate occurs before the coating step of YBCO raw materials, the addition of second-phase nano particles occurs in the preparation process of YBCO precursor liquid, and the radiation of high-energy particles at present directly acts on a high-temperature crystallized film. Generally, high-energy heavy particles are irradiated on a YBCO dense ceramic film sintered into a phase at high temperature to effectively bombard columnar defects, but the required energy level is very high, and the energy level is generally higher than GeV. By adjusting the energy level of the particle beam radiated by the high-energy particles, the defect size and density distribution in the film can be directly and effectively controlled. This is currently difficult to achieve by other means. However, high energy particle irradiation also has its limitation that the energy level for making columnar defects is high. If the particle irradiation method is applied to the large-scale industrial manufacture of YBCO superconducting tapes, the equipment and energy cost is too large.
Disclosure of Invention
The invention aims to provide a method for introducing columnar defects into an ex-situ high-temperature superconducting film, which mainly solves the technical problem that the energy level required for manufacturing the columnar defects by laser irradiation is very high. The idea of the invention is as follows: the method for introducing the columnar defects through femtosecond laser irradiation in the intermediate phase process of the YBCO superconducting thin film strip is provided creatively. The method is characterized in that various types of irradiation in the vertical direction of the surface of an intermediate product are carried out in the preparation process, so that the defect of preferred orientation is generated, and then the columnar defect is introduced into a final product, and the method belongs to the field of material design and processing.
The technical scheme of the invention is as follows: the method for introducing columnar defects into the ex-situ high-temperature superconducting thin film comprises the following steps of:
(1) preparing a YBCO precursor solution: weighing raw materials of yttrium acetate, barium acetate and copper acetate, dissolving the yttrium acetate and the barium acetate in deionized water and trifluoroacetic acid, stirring, dissolving the copper acetate in the deionized water and propionic acid, and stirring; adding methanol into the two solutions, carrying out reduced pressure distillation for three times, mixing, adding methanol to a constant volume, and preparing a YBCO precursor solution;
(2) spin coating: spin-coating TFA-YBCO precursor liquid on a Hastelloy substrate on a spin-coating machine to obtain a precursor film;
(3) low-temperature treatment: placing the film obtained by spin coating in a muffle furnace for low-temperature pyrolysis, introducing oxygen into room-temperature deionized water, and then introducing the oxygen into a hearth, wherein the film is subjected to low-temperature treatment in the hearth;
(4) intermediate temperature treatment: performing medium temperature treatment on the low-temperature treated pyrolytic film in the atmosphere of oxygen and water vapor to obtain a medium-temperature treated film;
(5) and (3) femtosecond laser irradiation punching: horizontally placing the low-temperature pyrolysis film or the medium-temperature treatment film, placing the surface coated with the raw material upwards, and irradiating and punching by femtosecond laser vertical to the plane of the film;
(6) high-temperature treatment: the irradiated film is subjected to high-temperature heat treatment in a high-temperature hearth, wherein the atmosphere is nitrogen, oxygen and water vapor; then cooling in the nitrogen and oxygen atmosphere to obtain a high-temperature crystallized YBCO film with irradiation columnar physical defects;
(7) and (3) post-treatment: and then carrying out oxygen absorption treatment on the high-temperature crystallization film, and keeping the temperature in pure oxygen for a period of time to obtain the yttrium barium copper oxide superconducting film strip.
In the step (1), yttrium acetate, barium acetate and copper acetate are weighed according to the stoichiometric ratio of 1:2: 3; the stirring time is 1-2 h, and the total cation concentration of the prepared YBCO precursor solution is 2.5 mol/L.
In the step (2), the spin coater adopts the rotating speed of 3000-.
In the step (3), the low-temperature treatment is carried out in such a way that the temperature of a hearth is reduced from 350 ℃ to 150 ℃ within 40 min.
In the step (4), the medium-temperature treatment is heat treatment at 600 ℃ for 10 min, the total pressure of water vapor and oxygen atmosphere is about 20-23 Pa, preferably the oxygen pressure is 13 Pa, and the water vapor pressure is 10 Pa.
The step (5), the femtosecond laser energy is 4-10μJ, preferably 5μJ, spot diameter about 2μm。
In the step (6), the high-temperature treatment is to heat the room temperature to 780 ℃ at a heating rate of 25 ℃, the temperature is kept for 120 min, wherein the atmosphere in the first 60 min of heat preservation time is nitrogen-oxygen mixed gas (the air pressure is 1 atm) with the oxygen content of 150 ppm, and the mixed gas is firstly introduced into a water bath at the temperature of 35 ℃ and then enters a hearth of a muffle furnace; the atmosphere of the later 60 min heat preservation time is dry nitrogen-oxygen mixed gas.
In the step (7), in the post-treatment, after the heat preservation in the step (6) is finished, the temperature is reduced to 450 ℃ along with the furnace, the heat preservation is carried out for 60 min, and the reaction atmosphere in the process is changed from the nitrogen-oxygen mixed gas to pure oxygen atmosphere; and cooling to room temperature along with the furnace after the heat preservation is finished.
And then sintering the pyrolytic film with the columnar defects at high temperature to obtain the high-temperature crystallized YBCO superconducting film with the columnar defects. The femtosecond laser is radiated perpendicular to the surface of the sample, and the columnar defect formed on the YBCO low-temperature pyrolysis film can also break down the film to form a channel of columnar defect perpendicular to the surface of the film.
The thickness range of the YBCO low-temperature pyrolysis film for manufacturing the columnar defects is 100-3000 nm.
The columnar defects can directly and effectively control the size and density distribution of the columnar defects by adjusting the energy and the intensity of the femtosecond laser.
The invention has the beneficial effects that: defects are introduced in the intermediate link of preparation of the YBCO superconducting film and the coating conductor thereof, and researches show that the low-temperature pyrolysis film and the medium-temperature pre-sintering film before the high-temperature crystallization step are loose in structure, so that columnar defects can be bombarded and manufactured on the film by adopting femtosecond laser irradiation with lower energy level, and effective artificial pinning centers are finally formed.
Drawings
FIG. 1 is a process flow diagram of the present invention.
FIG. 2 is a surface topography (SEM) of the low-temperature pyrolysis film obtained in example 1 of the present invention after femtosecond laser drilling.
FIG. 3 is a surface topography (SEM) of the mesophilic treated film obtained in example 1 of the present invention after femtosecond laser drilling.
FIG. 4 is a surface topography (SEM) of the perforated low-temperature pyrolytic film obtained in example 1 of the invention after high-temperature crystallization.
FIG. 5 is a surface topography (SEM) of the punched middle-temperature processed film obtained in example 1 of the present invention after high-temperature crystallization.
Detailed Description
The present invention is further illustrated by the following examples, which are to be construed as merely illustrative, and not a limitation of the present invention. With reference to figure 1 of the drawings,
the process for preparing the YBCO superconducting thin film by the TFA-MOD method comprises the following steps:
1. raw materials of yttrium acetate, barium acetate and copper acetate are weighed according to the stoichiometric ratio (1: 2: 3.3), yttrium acetate and barium acetate are dissolved in a proper amount of deionized water and excessive trifluoroacetic acid and stirred for 1-2 hours, and copper acetate is dissolved in a proper amount of deionized water and excessive propionic acid and stirred for 1-2 hours. Methanol is added into the two solutions to carry out reduced pressure distillation for three times, then the two solutions are mixed, and methanol is added to a constant volume to prepare YBCO precursor solution with the total cation concentration of 2.5 mol/L.
2. And spin-coating the YBCO precursor liquid with the total cation concentration of 2.5 mol/L on the surface of the Hastelloy alloy substrate by adopting the rotating speed of 3000-6000 rpm on a spin-coating machine for 1 min.
3. And (3) putting the spin-coated film into a muffle furnace for low-temperature pyrolysis, introducing oxygen with the flow rate of 1.5L/min into room-temperature deionized water, introducing into a hearth, carrying out low-temperature treatment on the film in the hearth for 40min, and reducing the temperature from 350 ℃ to 150 ℃ within the time.
4. And (3) carrying out heat treatment on the low-temperature treated pyrolytic film at 600 ℃ for 10 min under the atmosphere of 13 Pa oxygen and 10 Pa water vapor to obtain a medium-temperature treated film.
5. Horizontally placing the low-temperature pyrolysis film or the medium-temperature treatment film, placing the surface coated with the raw material upwards, and placing the film under femtosecond laser for vertical irradiation punching; the femtosecond laser energy is 5μJ, spot diameter 2μAnd m is selected. The surface appearance of the low-temperature pyrolysis film after femtosecond laser drilling is shown in figure 2, and the surface appearance of the medium-temperature treatment film after femtosecond laser drillingSee fig. 3 for an external view.
6. Heating the irradiated film to 780 ℃ from room temperature at a heating rate of 25 ℃ in a high-temperature hearth, and preserving heat for 120 min, wherein the atmosphere in the first 60 min of heat preservation time is nitrogen-oxygen mixed gas (the air pressure is 1 atm) with the oxygen content of 150 ppm, and the mixed gas is firstly introduced into a water bath at 35 ℃ and then enters a muffle furnace hearth; the atmosphere of the later 60 min heat preservation time is dry nitrogen-oxygen mixed gas. The surface appearance of the perforated low-temperature pyrolysis film after high-temperature crystallization is shown in figure 4, and the surface appearance of the perforated medium-temperature treatment film after high-temperature crystallization is shown in figure 5.
7. After the heat preservation is finished, oxygen absorption treatment is carried out, namely, the temperature is reduced to 450 ℃ along with the furnace, the heat preservation is carried out for 60 min, and the reaction atmosphere is changed from nitrogen-oxygen mixed gas into pure oxygen atmosphere (the air pressure is 1 atm); and after the heat preservation is finished, cooling the film to room temperature along with the furnace to obtain the yttrium barium copper oxide superconducting film strip after oxygen absorption.
Claims (7)
1. A method for introducing columnar defects into a high-temperature superconducting thin film by an ex-situ method is characterized by comprising the following steps: the method comprises the following steps:
(1) preparing a YBCO precursor solution: weighing raw materials of yttrium acetate, barium acetate and copper acetate, dissolving the yttrium acetate and the barium acetate in deionized water and trifluoroacetic acid, stirring, dissolving the copper acetate in the deionized water and propionic acid, and stirring; adding methanol into the two solutions, carrying out reduced pressure distillation for three times, mixing, adding methanol to a constant volume, and preparing a YBCO precursor solution;
(2) spin-coating TFA-YBCO precursor liquid on a Hastelloy substrate on a spin-coating machine to obtain a precursor film;
(3) low-temperature treatment: placing the film obtained by spin coating in a muffle furnace for low-temperature pyrolysis, introducing oxygen into room-temperature deionized water, and then introducing oxygen into a hearth, wherein the film is subjected to low-temperature treatment in the hearth; the low-temperature treatment is that the temperature of a hearth is reduced to 150 ℃ within 40 min;
(4) intermediate temperature treatment: performing medium temperature treatment on the low-temperature treated pyrolytic film in the atmosphere of oxygen and water vapor to obtain a medium-temperature treated film; the medium temperature treatment is 600 ℃ heat treatment for 10 min;
(5) and (3) femtosecond laser irradiation punching: horizontally placing the low-temperature pyrolysis film or the medium-temperature treatment film, placing the surface coated with the raw material upwards, and irradiating and punching by femtosecond laser vertical to the plane of the film;
(6) high-temperature treatment: the irradiated film is subjected to high-temperature heat treatment in a high-temperature hearth, wherein the atmosphere is nitrogen, oxygen and water vapor; then cooling in the atmosphere of nitrogen and oxygen to obtain a high-temperature crystallized YBCO film with irradiation columnar physical defects;
(7) and (3) post-treatment: and then carrying out oxygen absorption treatment on the high-temperature crystallization film, and keeping the temperature in pure oxygen for a period of time to obtain the yttrium barium copper oxide superconducting film strip.
2. The method of introducing columnar defects into an ex-situ high temperature superconducting thin film as claimed in claim 1, wherein: in the step (1), yttrium acetate, barium acetate and copper acetate are weighed according to the stoichiometric ratio of 1:2: 3.3; the stirring time is 1-2 h, and the total cation concentration of the prepared YBCO precursor solution is 2.5 mol/L.
3. The method for introducing columnar defects into an ex-situ high temperature superconducting thin film as claimed in claim 1, wherein: and (2) in the step (2), the rotating speed is 3000 and 6000 rpm during spin coating, and the time duration is 1 min.
4. The method of introducing columnar defects into an ex-situ high temperature superconducting thin film as claimed in claim 1, wherein: in the step (5), the femtosecond laser energy is 4-10μJ。
5. The method for introducing columnar defects into an ex-situ high temperature superconducting thin film as claimed in claim 4, wherein: femtosecond laser energy of 5μJ, the diameter of the light spot is 2μm。
6. The method of introducing columnar defects into an ex-situ high temperature superconducting thin film as claimed in claim 1, wherein: in the step (6), the high-temperature treatment is performed at 780 ℃ for 120 minutes, and the heat preservation is performed for 120 minutes, wherein the atmosphere in the first 60 minutes of heat preservation time is wet nitrogen-oxygen mixed gas with the oxygen content of 150 ppm which is firstly introduced into a water bath at 35 ℃; the atmosphere in the later 60 min heat preservation time is dry nitrogen-oxygen mixed gas.
7. The method of introducing columnar defects into an ex-situ high temperature superconducting thin film as claimed in claim 1, wherein: and (7) in the post-treatment, pure oxygen atmosphere is adopted, the air pressure is 1 atm, the oxygen absorption treatment temperature is 450 ℃, the temperature is kept for 60 min, and finally, the temperature is naturally reduced.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010770668.XA CN111825444B (en) | 2020-08-04 | 2020-08-04 | Method for introducing columnar defects into ex-situ high-temperature superconducting thin film |
| NL2028917A NL2028917B1 (en) | 2020-08-04 | 2021-08-04 | Ex-situ method for introducing columnar defect to high-temperature superconducting film and coated conductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010770668.XA CN111825444B (en) | 2020-08-04 | 2020-08-04 | Method for introducing columnar defects into ex-situ high-temperature superconducting thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111825444A CN111825444A (en) | 2020-10-27 |
| CN111825444B true CN111825444B (en) | 2022-08-19 |
Family
ID=72919334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010770668.XA Active CN111825444B (en) | 2020-08-04 | 2020-08-04 | Method for introducing columnar defects into ex-situ high-temperature superconducting thin film |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN111825444B (en) |
| NL (1) | NL2028917B1 (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5096882A (en) * | 1987-04-08 | 1992-03-17 | Hitachi, Ltd. | Process for controlling oxygen content of superconductive oxide, superconductive device and process for production thereof |
| US5124310A (en) * | 1990-08-20 | 1992-06-23 | Energy Conversion Devices, Inc. | Laser ablation method for depositing fluorinated y-ba-cu-o superconducting film having basal plane alignment of the unit cells deposited on non-lattice-matched substrates |
| US6287925B1 (en) * | 2000-02-24 | 2001-09-11 | Advanced Micro Devices, Inc. | Formation of highly conductive junctions by rapid thermal anneal and laser thermal process |
| CN101456726A (en) * | 2009-01-07 | 2009-06-17 | 西南交通大学 | Method for preparing high critical current density yttrium barium copper oxide superconducting film |
| CN101746807A (en) * | 2008-12-17 | 2010-06-23 | 北京有色金属研究总院 | Method for increasing thickness of YBCO film prepared through TFA-MOD method |
| CN103367626A (en) * | 2013-07-02 | 2013-10-23 | 西北有色金属研究院 | Coating conductor superconducting film and preparation method thereof |
| CN103864461A (en) * | 2014-03-13 | 2014-06-18 | 西北有色金属研究院 | Method for preparing REBCO superconducting thin film |
| CN105551681A (en) * | 2016-02-05 | 2016-05-04 | 上海上创超导科技有限公司 | Multi-layer structure for barium-copper-oxygen high-temperature superconducting coated conductor |
| CN106229404A (en) * | 2016-08-11 | 2016-12-14 | 上海大学 | Multiple structure high temperature superconductive thick film and preparation method thereof |
| WO2020142119A2 (en) * | 2018-10-02 | 2020-07-09 | Massachusetts Institute Of Technology | Techniques for cryogenic radiation enhancement of superconductors and related systems and methods |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0677880A1 (en) * | 1994-04-12 | 1995-10-18 | International Business Machines Corporation | Enhancement of persistent currents in high-Tc superconductors |
-
2020
- 2020-08-04 CN CN202010770668.XA patent/CN111825444B/en active Active
-
2021
- 2021-08-04 NL NL2028917A patent/NL2028917B1/en active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5096882A (en) * | 1987-04-08 | 1992-03-17 | Hitachi, Ltd. | Process for controlling oxygen content of superconductive oxide, superconductive device and process for production thereof |
| US5124310A (en) * | 1990-08-20 | 1992-06-23 | Energy Conversion Devices, Inc. | Laser ablation method for depositing fluorinated y-ba-cu-o superconducting film having basal plane alignment of the unit cells deposited on non-lattice-matched substrates |
| US6287925B1 (en) * | 2000-02-24 | 2001-09-11 | Advanced Micro Devices, Inc. | Formation of highly conductive junctions by rapid thermal anneal and laser thermal process |
| CN101746807A (en) * | 2008-12-17 | 2010-06-23 | 北京有色金属研究总院 | Method for increasing thickness of YBCO film prepared through TFA-MOD method |
| CN101456726A (en) * | 2009-01-07 | 2009-06-17 | 西南交通大学 | Method for preparing high critical current density yttrium barium copper oxide superconducting film |
| CN103367626A (en) * | 2013-07-02 | 2013-10-23 | 西北有色金属研究院 | Coating conductor superconducting film and preparation method thereof |
| CN103864461A (en) * | 2014-03-13 | 2014-06-18 | 西北有色金属研究院 | Method for preparing REBCO superconducting thin film |
| CN105551681A (en) * | 2016-02-05 | 2016-05-04 | 上海上创超导科技有限公司 | Multi-layer structure for barium-copper-oxygen high-temperature superconducting coated conductor |
| CN106229404A (en) * | 2016-08-11 | 2016-12-14 | 上海大学 | Multiple structure high temperature superconductive thick film and preparation method thereof |
| WO2020142119A2 (en) * | 2018-10-02 | 2020-07-09 | Massachusetts Institute Of Technology | Techniques for cryogenic radiation enhancement of superconductors and related systems and methods |
Non-Patent Citations (5)
| Title |
|---|
| "Enhancement of dislocation density in YBa2Cu3Oy thin films prepared by low temperature growth technique";S. Funaki等;《Physica C》;20070524;第644-648页 * |
| "Optically induced lattice deformations, electronic structure changes, and enhanced superconductivity in YBa2Cu3O6.48";R. Mankowsky等;《STRUCTURAL DYNAMICS》;20170228;第1-9页 * |
| "YBa2Cu3O7-x纳米复合薄膜磁通钉扎特性的研究进展";许文娟等;《稀有金属》;20180930;第984-995页 * |
| "YBa2Cu3O7-δ外延膜中的非线性光响应";徐克西等;《物理学报》;19980228;第307-315页 * |
| "金属有机溶液法制备YBa2Cu3O7-δ超导薄膜的厚化特性";芮润生;《无机材料学报》;20141130;第1167-1172页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| NL2028917A (en) | 2021-12-01 |
| CN111825444A (en) | 2020-10-27 |
| NL2028917B1 (en) | 2022-06-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20130196856A1 (en) | Iron based superconducting structures and methods for making the same | |
| CN100565953C (en) | A kind of method of polymer-assistant depositing high temperature superconducting coating conductor superconducting layer | |
| Aytug et al. | Enhanced flux pinning in MOCVD-YBCO films through Zr additions: systematic feasibility studies | |
| CN112839742A (en) | Superconductor flux pinning without columnar defects | |
| CN102584204A (en) | Method for preparing yttrium barium copper oxide (YBCO) superconductive composite film | |
| Ding et al. | Strong flux pinning enhancement in YBa2Cu3O7− x films by embedded BaZrO3 and BaTiO3 nanoparticles | |
| CN111825444B (en) | Method for introducing columnar defects into ex-situ high-temperature superconducting thin film | |
| Zhao et al. | Growth of Bi2Sr2CaCu2O8+ δ thin films with enhanced superconducting properties by incorporating NiO nanoparticles | |
| CN116322281A (en) | Treatment method beneficial to improving superconducting current carrying performance, superconducting layer and superconducting material | |
| CN114318242B (en) | Fe (Se, te) superconducting thick film and preparation method and application thereof | |
| Kimura et al. | Development of REBCO coated conductors by TFA-MOD method with high characteristic in magnetic field | |
| CN102569636B (en) | Method for preparing gadolinium-barium-copper-oxygen (GdBCO) high-temperature superconducting thin film by using chemical solution method | |
| Li et al. | Microstructures Property and Improved J c of Eu-Doped YBa 2 Cu 3.6 O 7− δ Thin Films by Trifluoroacetate Metal Organic Deposition Process | |
| Yoshihara et al. | BaMO 3 (M= Zr, Hf) Doped REBCO Tapes Fabricated by Fluorine-Free MOD | |
| Wang et al. | Enhanced flux pinning properties in superconducting YBa2Cu3O7− z films by a novel chemical doping approach | |
| CN104788092B (en) | The method that a kind of heat treatment of ultraviolet auxiliary prepares Yt-Ba-Cu-O high-temperature superconductive film | |
| Dai et al. | YBa 2 Cu 3 O 7–δ films prepared by pulsed laser deposition in O 2/Ar mixture atmosphere | |
| Liu et al. | Electromagnetic Properties of $(\hbox {Gd},\hbox {Y})\hbox {Ba} _ {2}\hbox {Cu} _ {3}\hbox {O} _ {\rm x} $ Superconducting Tapes With High Levels of Zr Addition | |
| Rijckaert et al. | Superconducting YBa 2 Cu 3 O 7− δ Nanocomposite Films Using Preformed ZrO 2 Nanocrystals via Chemical Solution Deposition | |
| CN112456538B (en) | Preparation method of REBCO nano particle composite YBCO superconducting layer | |
| Zhang et al. | Fe-doped epitaxial YBCO films prepared by chemical solution deposition | |
| CN102683572A (en) | Method for preparing NiO/SmBiO3 composite buffer layer thin film of high-temperature super-conduction coating conductor on biaxially-textured NiW alloy substrate | |
| Matsuda et al. | Transmission electron microscopic studies on growth mechanism of YBa2Cu3O7− y films formed by advanced trifluoroacetates metalorganic deposition process | |
| Zhang et al. | SmBa 2 Cu 3 O 7− δ superconducting layer prepared on NiO buffer layer through fluorine-free chemical method | |
| CN115581114A (en) | Preparation method of YBCO multilayer thick film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |