CN111817262A - Short-circuit protection circuit of SiC device and power electronic equipment - Google Patents
Short-circuit protection circuit of SiC device and power electronic equipment Download PDFInfo
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- CN111817262A CN111817262A CN202010570995.0A CN202010570995A CN111817262A CN 111817262 A CN111817262 A CN 111817262A CN 202010570995 A CN202010570995 A CN 202010570995A CN 111817262 A CN111817262 A CN 111817262A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
- H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
Abstract
The application discloses a short-circuit protection circuit of a SiC device and power electronic equipment, wherein the short-circuit protection circuit of the SiC device comprises a driving circuit, a first transistor switching tube, a second transistor switching tube, a first resistor, a second resistor and a first voltage stabilizing diode; the first resistor, the first transistor switch tube, the second resistor and the first voltage stabilizing diode are sequentially connected in series to form a first branch circuit; the second electrode end of the SiC device is connected with the second electrode end of the second crystal switch tube and one end, close to the first resistor, of the first branch circuit, the first electrode end of the SiC device is connected with the other end, close to the first voltage stabilizing diode, of the first branch circuit, and the control end of the SiC device is connected with the first electrode end of the second crystal switch tube, the control end of the first crystal switch tube and the driving circuit. According to the short-circuit protection circuit of the SiC device and the power electronic equipment, the blanking capacitor is removed, the short-circuit protection time of the SiC device can be shortened, and the reliability of a system is improved.
Description
Technical Field
The application relates to the technical field of power electronics, in particular to a short-circuit protection circuit of a SiC device and power electronic equipment.
Background
The short-circuit protection of the SiC device is mainly carried out by detecting the saturation voltage drop at two ends of Vds.
As shown in fig. 1, R1 is a current limiting resistor, D1 is an anti-reverse diode, R2 is a driving resistor of the SiC device Q1, and C2 is a blanking capacitor. The drive circuit is internally provided with a controlled current source, the internally provided controlled current source and the drive voltage are synchronously output, namely the drive voltage is positive, and the internally provided controlled current source has output.
When the Q1 works normally, the saturation voltage drop across Vds of the Q1 is low, at this time, a built-in controlled current source of the driving circuit is bypassed through R1 and D1, and the voltage of the blanking capacitor C2 does not reach the threshold voltage of short-circuit protection, so that the driving circuit does not start a protection mechanism.
When the Q1 is short-circuited, the saturation voltage drop across Vds of the Q1 will rapidly increase greatly, the voltage of the blanking capacitor C2 will also rapidly increase to the threshold voltage, and the driving circuit immediately turns off the driving, so that the Q1 is turned off.
The problem with the above solution is that the capacitance of the blanking capacitor C2 is large, and the short-circuit time is long, resulting in reduced reliability.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a short-circuit protection circuit for a SiC device and a power electronic device, so as to solve the problems of a conventional short-circuit protection circuit for a SiC device that a blanking capacitance value is large and a short-circuit time is long.
The technical scheme adopted by the application for solving the technical problems is as follows:
according to an aspect of the present application, a short-circuit protection circuit of a SiC device is provided, the short-circuit protection circuit of the SiC device includes a driving circuit, a first transistor, a second transistor, a first resistor, a second resistor, and a first zener diode;
the first resistor, the first transistor switch tube, the second resistor and the first voltage stabilizing diode are sequentially connected in series to form a first branch circuit;
a second electrode end of the SiC device is connected with a second electrode end of the second crystal switch tube and one end, close to the first resistor, of the first branch circuit, a first electrode end of the SiC device is connected with the other end, close to the first voltage stabilizing diode, of the first branch circuit, and a control end of the SiC device is connected with a first electrode end of the second crystal switch tube, a control end of the first crystal switch tube and the driving circuit;
the driving circuit is used for driving the first transistor switching tube and the SiC device.
In one embodiment, the short protection circuit of the SiC device further includes a third resistor, a fourth resistor, and a fifth resistor;
the one end of third resistance with drive circuit connects, the other end of third resistance with the control end of first transistor switch tube, the first electrode end of second transistor switch tube and the one end of fourth resistance is connected, the other end of fourth resistance with the one end of fifth resistance and the control end of SiC device is connected, the other end of fifth resistance with the second electrode end of SiC device is connected.
In one embodiment, the short-circuit protection circuit of the SiC device further includes a sixth resistor, a seventh resistor, and an anti-reverse diode;
one end of the sixth resistor is connected with the other end of the third resistor, and the other end of the sixth resistor is connected with the control end of the first transistor switch tube;
and the seventh resistor is connected with the anti-reverse diode in series and then connected with the sixth resistor in parallel.
In one embodiment, the short protection circuit of the SiC device further includes a second zener diode; the second voltage stabilizing diode is connected between the control end of the second crystal switch tube and the second electrode end in parallel.
In one embodiment, the short-circuit protection circuit of the SiC device further includes a latch-up circuit to latch the switching state of the second transistor switch when short-circuit protection is triggered.
In one embodiment, the SiC latch-up circuit includes a third transistor switch and a fourth transistor switch;
the control end of the third transistor is connected with the control end of the second transistor, the first electrode end of the third transistor is connected with the control end of the fourth transistor, the second electrode end of the third transistor is connected with the second electrode end of the second transistor, the first electrode end of the fourth transistor is connected with a power supply, and the second electrode end of the fourth transistor is connected with the control end of the third transistor.
In one embodiment, the SiC latch-up circuit further includes an eighth resistor and a ninth resistor;
one end of the eighth resistor is connected with the first electrode end of the third transistor switch tube, and the other end of the eighth resistor is connected with the control end of the fourth transistor switch tube;
one end of the ninth resistor is connected with the second electrode end of the fourth transistor switch tube, and the other end of the ninth resistor is connected with the control end of the third transistor switch tube.
In one embodiment, the short-circuit protection circuit of the SiC device further includes a control circuit for fault handling when short-circuit protection is triggered;
the control circuit is connected with the control end of the third transistor switch tube.
According to another aspect of the present application, there is provided a power electronic apparatus including at least one SiC device, and a short-circuit protection circuit corresponding to the at least one SiC device.
According to the short-circuit protection circuit of the SiC device and the power electronic equipment, the blanking capacitor is removed, the short-circuit protection time of the SiC device can be shortened, and the reliability of a system is improved.
Drawings
FIG. 1 is a schematic diagram of a short circuit protection circuit of a prior art SiC device;
fig. 2 is a schematic diagram of a short-circuit protection circuit of a SiC device provided in an embodiment of the present application;
fig. 3 is a schematic diagram of a relationship between resistance and drain current at different temperatures of a SiC device provided in the embodiment of the present application.
The implementation, functional features and advantages of the objectives of the present application will be further explained with reference to the accompanying drawings.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application clearer and clearer, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Example one
As shown in fig. 2, an embodiment of the present application provides a power electronic apparatus including a SiC device Q11, a SiC device Q12, and a dc bus capacitor C1. A short-circuit protection circuit of the SiC device Q11 is also provided. The circuit configuration of the power electronic device is not limited to the case shown in fig. 2.
The short-circuit protection circuit comprises a driving circuit, a first transistor switch Q1, a second transistor switch Q2, a first resistor R1, a second resistor R2 and a first voltage-stabilizing diode Z1;
the first resistor R1, the first transistor Q1, the second resistor R2 and the first zener diode Z1 are sequentially connected in series to form a first branch;
the second electrode terminal of the SiC device is connected to the second electrode terminal of the second transistor Q2 and one end (shown in a in the figure) of the first branch circuit near the first resistor R1, the first electrode terminal of the SiC device is connected to the other end (shown in B in the figure) of the first branch circuit near the first zener diode Z1, and the control terminal of the SiC device is connected to the first electrode terminal of the second transistor Q2, the control terminal of the first transistor Q1 and the driving circuit;
the driving circuit is used for driving the first transistor switching tube Q1 and the SiC device.
In this example, the short-circuit protection circuit of the SiC device further includes a third resistor R3, a fourth resistor R4, and a fifth resistor R5;
one end of the third resistor R3 is connected to the driving circuit, the other end of the third resistor R3 is connected to the control terminal of the first transistor Q1, the first electrode terminal of the second transistor Q2 and one end of the fourth resistor R4, the other end of the fourth resistor R4 is connected to one end of the fifth resistor R5 and the control terminal of the SiC device, and the other end of the fifth resistor R5 is connected to the second electrode terminal of the SiC device.
Example two
In this example, the short-circuit protection circuit of the SiC device further includes a sixth resistor R6, a seventh resistor R7, and an anti-reverse diode D1;
one end of the sixth resistor R6 is connected to the other end of the third resistor R3, and the other end of the sixth resistor R6 is connected to the control end of the first transistor Q1;
the seventh resistor R7 is connected in series with the anti-reverse diode D1 and then connected in parallel with the sixth resistor R6.
In this example, the short-circuit protection circuit of the SiC device further includes a second zener diode Z2; the second zener diode Z2 is connected in parallel between the control terminal and the second electrode terminal of the second transistor switch Q2.
In this example, the short protection circuit of the SiC device further includes a latch-up circuit to latch the switching state of the second crystal switching transistor Q2 when short protection is triggered.
EXAMPLE III
In this example, the SiC latch-up circuit includes a third transistor Q3 and a fourth transistor Q4;
a control terminal of the third transistor Q3 is connected to a control terminal of the second transistor Q2, a first electrode terminal of the third transistor Q3 is connected to a control terminal of the fourth transistor Q4, a second electrode terminal of the third transistor Q3 is connected to a second electrode terminal of the second transistor Q2, a first electrode terminal of the fourth transistor Q4 is connected to a power supply, and a second electrode terminal of the fourth transistor Q4 is connected to a control terminal of the third transistor Q3.
Example four
In this example, the SiC latch-up circuit further includes an eighth resistor R8 and a ninth resistor R9;
one end of the eighth resistor R8 is connected to the first electrode terminal of the third transistor Q3, and the other end of the eighth resistor R8 is connected to the control terminal of the fourth transistor Q4;
one end of the ninth resistor R9 is connected to the second electrode terminal of the fourth transistor Q4, and the other end of the ninth resistor R9 is connected to the control terminal of the third transistor Q3.
In this example, the short-circuit protection circuit of the SiC device further includes a control circuit for performing fault handling when short-circuit protection is triggered;
the control circuit is connected with the control end of the third transistor switching tube Q3.
The following description is made with reference to specific device parameters:
the SiC device Q11 selects CREE C3M0016120, rated current 85A and rated voltage 1200V; the first transistor Q1 selects a MOS transistor with a withstand voltage of 1200V, the second transistor Q2 selects a MOS transistor with a withstand voltage of 50V, the first zener diode Z1 selects a transient diode with a voltage of 3.3V, the first resistor R1 selects 1210/10 omega, the second resistor R2 selects 1210/10 omega, the sixth resistor R6 selects 1206/150 omega, and the seventh resistor R7 selects 1206/10 omega. The drive circuit section outputs a drive voltage of 15V at a high level and 0V at a low level. The first transistor Q1 and the SiC device Q11 are driven in common, and in the turn-on sequence, the sixth resistor R6 and the seventh resistor R7 are adjusted, so that the turn-on of the first transistor Q1 lags behind the SiC device Q11, and the turn-off is faster than the SiC device Q11. Thus, when the first transistor switch Q1 is turned on, the voltage and current stress on the first resistor R1, the second resistor R2 and the first zener diode Z1 can be reduced.
When the controller normally operates, the driving voltage of the second transistor Q2 is R1 × 15/(R1+ R6) ═ 0.94V, so the driving voltage normally output by the driving circuit does not cause the second transistor Q2 to turn on. In addition, the saturation voltage drop of Vds of the SiC device Q11 is relatively small, and the rated current can be calculated through the relationship diagram of the resistance and the drain current at different temperatures of the SiC device shown in fig. 3, and when the temperature of the SiC device is 175 ℃, the saturation voltage drop is about 2.55V, the second crystal switch Q2 is not broken down, the second crystal switch Q2 is not conducted, and based on the two situations, when the driver normally works, the second crystal switch Q2 is not conducted by mistake, so that the normal work of the controller is not affected.
When the controller is in a short circuit state, the saturation voltage drop of Vds of the SiC device Q11 is about 11.75V under the condition of 3 times rated current (255A) and 175 ℃ as can be calculated from fig. 3. At this time, the driving voltage of the second transistor Q2 is calculated to be (11.75-3.3) × 10/20 ═ 4.22V (Vds of the first transistor Q1 is negligible here), and this voltage can drive the second transistor Q2 to conduct. After the second transistor Q2 is turned on, the first transistor Q1 and the SiC device Q11 are sequentially turned off, thereby performing a short-circuit protection function. Since only the voltage of the pin of the power device is turned off, the driving voltage at the end of the driving circuit still exists, and after the second transistor Q2 is turned off, the SiC device Q11 will obtain the driving voltage again and turn on, i.e. enter the short-circuit state again. To prevent damage to the power device by repeatedly entering such a re-short re-protection state. Therefore, a latch circuit formed by the third transistor Q3 and the fourth transistor Q4 is added, once the short-circuit protection is triggered, a driving voltage is generated on the gate of the third transistor Q3 to turn on, and then the fourth transistor Q4 turns on, so that the VCC voltage is charged to the gates of the third transistor Q3 and the fourth transistor Q4 and is kept. With the addition of the latch-up circuit, the second transistor Q2 will be turned on, so that the driving voltage of the SiC device Q11 is pulled low until the reset position is reached from the new power-on. Meanwhile, in order that the control part can know the working state of the controller in time, the short-circuit signal is sent to the control circuit so that the control part can perform subsequent fault treatment.
The preferred embodiments of the present application have been described above with reference to the accompanying drawings, and are not intended to limit the scope of the claims of the application accordingly. Any modifications, equivalents and improvements which may occur to those skilled in the art without departing from the scope and spirit of the present application are intended to be within the scope of the claims of the present application.
Claims (9)
1. A short-circuit protection circuit of a SiC device comprises a driving circuit and a second resistor, and is characterized by further comprising a first transistor switch tube, a second transistor switch tube, a first resistor and a first voltage stabilizing diode;
the first resistor, the first transistor switch tube, the second resistor and the first voltage stabilizing diode are sequentially connected in series to form a first branch circuit;
a second electrode end of the SiC device is connected with a second electrode end of the second crystal switch tube and one end, close to the first resistor, of the first branch circuit, a first electrode end of the SiC device is connected with the other end, close to the first voltage stabilizing diode, of the first branch circuit, and a control end of the SiC device is connected with a first electrode end of the second crystal switch tube, a control end of the first crystal switch tube and the driving circuit;
the driving circuit is used for driving the first transistor switching tube and the SiC device.
2. The short-circuit protection circuit of the SiC device according to claim 1, further comprising a third resistor, a fourth resistor, and a fifth resistor;
the one end of third resistance with drive circuit connects, the other end of third resistance with the control end of first transistor switch tube, the first electrode end of second transistor switch tube and the one end of fourth resistance is connected, the other end of fourth resistance with the one end of fifth resistance and the control end of SiC device is connected, the other end of fifth resistance with the second electrode end of SiC device is connected.
3. The short-circuit protection circuit of the SiC device according to claim 2, further comprising a sixth resistor, a seventh resistor, and an anti-reverse diode;
one end of the sixth resistor is connected with the other end of the third resistor, and the other end of the sixth resistor is connected with the control end of the first transistor switch tube;
and the seventh resistor is connected with the anti-reverse diode in series and then connected with the sixth resistor in parallel.
4. The short-circuit protection circuit of the SiC device according to claim 3, further comprising a second zener diode; the second voltage stabilizing diode is connected between the control end of the second crystal switch tube and the second electrode end in parallel.
5. The short-circuit protection circuit of the SiC device according to any one of claims 1 to 4, further comprising a latch-up circuit to latch up the switching state of the second crystal switching tube when the short-circuit protection is triggered.
6. The short-circuit protection circuit of the SiC device according to claim 5, wherein the SiC locking circuit comprises a third transistor switch tube and a fourth transistor switch tube;
the control end of the third transistor is connected with the control end of the second transistor, the first electrode end of the third transistor is connected with the control end of the fourth transistor, the second electrode end of the third transistor is connected with the second electrode end of the second transistor, the first electrode end of the fourth transistor is connected with a power supply, and the second electrode end of the fourth transistor is connected with the control end of the third transistor.
7. The short-circuit protection circuit of the SiC device according to claim 6, wherein the SiC latch-up circuit further includes an eighth resistor and a ninth resistor;
one end of the eighth resistor is connected with the first electrode end of the third transistor switch tube, and the other end of the eighth resistor is connected with the control end of the fourth transistor switch tube;
one end of the ninth resistor is connected with the second electrode end of the fourth transistor switch tube, and the other end of the ninth resistor is connected with the control end of the third transistor switch tube.
8. The short-circuit protection circuit of the SiC device according to claim 7, further comprising a control circuit for performing fault handling when short-circuit protection is triggered;
the control circuit is connected with the control end of the third transistor switch tube.
9. A power electronic apparatus, characterized in that the power electronic apparatus includes at least one SiC device, and a short-circuit protection circuit corresponding to the at least one SiC device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010570995.0A CN111817262B (en) | 2020-06-22 | 2020-06-22 | Short-circuit protection circuit of SiC device and power electronic equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010570995.0A CN111817262B (en) | 2020-06-22 | 2020-06-22 | Short-circuit protection circuit of SiC device and power electronic equipment |
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| CN111817262A true CN111817262A (en) | 2020-10-23 |
| CN111817262B CN111817262B (en) | 2023-03-14 |
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| CN111817262B (en) | 2023-03-14 |
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