CN111812124A - Failure analysis layer removing method - Google Patents
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- CN111812124A CN111812124A CN202010585440.3A CN202010585440A CN111812124A CN 111812124 A CN111812124 A CN 111812124A CN 202010585440 A CN202010585440 A CN 202010585440A CN 111812124 A CN111812124 A CN 111812124A
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/20008—Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
- G01N2001/2866—Grinding or homogeneising
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
- G01N2001/2873—Cutting or cleaving
- G01N2001/2886—Laser cutting, e.g. tissue catapult
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Abstract
The invention provides a failure analysis layer removing method, which comprises the steps of intercepting a sample, putting the sample into a laser cutting machine, and determining a failure analysis area and a target position of the sample; the failure analysis layer where the target position is located is Mx; manufacturing a plurality of grooves surrounding a target position by using a laser cutting machine; the bottom of the groove is positioned on the Mx +2 layer of the metal layer or at the position of the depth below the Mx +2 layer of the metal layer; a plurality of grooves surrounding the target position are adjacent and mutually communicated, and a failure analysis area of the grooves surrounding the target position is divided into independent areas based on failure analysis relative to other areas of the sample; and (3) placing the sample on a polishing machine, carrying out delaminating grinding on the failure analysis area surrounded by the groove, observing the grinding position by using an optical microscope, grinding until the metal layer above the failure analysis layer Mx is removed, and exposing the target position in the failure analysis layer Mx. The failure analysis layer removing method provided by the invention can be used for shortening sample grinding time and enhancing efficiency while ensuring the accuracy and effectiveness of chip layer removal.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a failure analysis delamination method.
Background
De-layering (De-layer) is a common pretreatment method for TEM assisted sampling in Failure Analysis (FA), and is mainly used for removing redundant metal layers and for some samples needing to be positioned by a metal layer above.
There are two existing methods for layer removal:
firstly, directly grinding the sample on a grinding machine by using flannelette after intercepting the sample. The advantages are that: the surface of the whole sample is smooth, the metal layer is hardly deformed and damaged, and the probability of Fail is low. The disadvantages are as follows: for some samples with more metal layers, such as 7-layer metal + TOP metal, the manual grinding takes a relatively long time, often more than one hour.
And secondly, directly grinding the sample on a grinding machine by using diamond abrasive paper after cutting the sample. The advantages are that: compared with the grinding with flannelette, the time is greatly shortened. The disadvantages are as follows: the surface T degree of the sample is larger, the probability of fail is larger, and the deformation damage of the Metal on the current layer caused by the overlarge hard force can indirectly influence the analysis target on the lower layer, and finally influence the analysis result of the TEM sample.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention provides a failure analysis delamination method, which is used to solve the problems of long time spent in grinding and high grinding failure rate in the prior art.
To achieve the above and other related objects, the present invention provides a failure analysis delamination method, at least comprising the following steps:
firstly, intercepting a sample and putting the sample into a laser cutting machine, and determining a failure analysis area of the sample and a target position on the failure analysis area;
secondly, a plurality of metal layers from M1 to Mn which are sequentially stacked from bottom to top are arranged in the failure analysis area of the sample in the longitudinal direction, wherein the failure analysis layer where the target position is located is Mx, and x is more than or equal to 1 and less than or equal to n; manufacturing a plurality of grooves surrounding the target position on the failure analysis area by using the laser cutting machine; the bottom of the groove is positioned at the depth position on or below the Mx +2 metal layer; a plurality of grooves surrounding the target position are mutually communicated in an adjacent mode, and a failure analysis area of the grooves surrounding the target position is divided into independent areas based on failure analysis relative to other areas of the sample;
and thirdly, placing the sample on a polishing machine, carrying out layer removal grinding on the failure analysis area surrounded by the groove, observing a grinding position by using an optical microscope in the grinding process until the metal layer above the failure analysis layer Mx is removed, and exposing a target position in the failure analysis layer Mx.
Preferably, the failure analysis area in the first step is an area between two pads.
Preferably, the failure analysis region in step one is rectangular in shape and has a size of 100 μm by 100 μm to 150 μm by 150 μm.
Preferably, in the second step, the number of the grooves surrounding the failure analysis region is four, and the grooves are respectively located at four positions, i.e..
Preferably, the failure analysis area of the sample in the second step is provided with the metal layers from M1 to M6 which are sequentially stacked from bottom to top in the longitudinal direction.
Preferably, the failure analysis layer of the target position in the second step is M1, and the bottom of the trench is located at a depth on or below the layer M3 of the failure analysis layer.
Preferably, the failure analysis layer of the target position in the second step is M1, and the bottom of the trench is located inside the substrate.
Preferably, the trench has a length of 50 μm and a width of 5 μm.
Preferably, the method of the present invention further comprises a fourth step of placing the grinded sample into a polyion beam for TEM sample preparation.
As described above, the failure analysis delamination method of the present invention has the following beneficial effects: the failure analysis layer removing method provided by the invention can be used for shortening sample grinding time and enhancing efficiency while ensuring the accuracy and effectiveness of chip layer removal.
Drawings
FIG. 1 is a schematic illustration of the location of a target on a failure zone in accordance with the present invention;
FIG. 2 is a schematic view of a sample surface provided with grooves according to the present invention;
FIG. 3 shows a schematic cross-sectional view of a trench surrounding a target site in a sample according to the present invention;
FIG. 4 shows focused ion beam images of two areas after de-layering of a sample of the present invention;
FIG. 5 shows a focused ion beam image of region A of FIG. 4;
FIG. 6 shows a focused ion beam image of region B of FIG. 4;
FIG. 7 is a flow chart of a failure analysis delamination method according to the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 7. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
The present embodiment provides a failure analysis delamination method, as shown in fig. 7, and fig. 7 is a flowchart illustrating the failure analysis delamination method according to the present invention. The failure analysis delamination method of the embodiment at least comprises the following steps:
firstly, intercepting a sample and putting the sample into a laser cutting machine, and determining a failure analysis area of the sample and a target position on the failure analysis area; as shown in fig. 1, fig. 1 is a schematic diagram showing a target position on a failure region in the present invention. The target position in fig. 1 refers to a position of a failure region where an object to be analyzed located on a metal layer below the uppermost metal layer is projected on the uppermost layer. Further, the failure analysis area in the first step is an area between two bonding pads. That is, the region between two pads (pads) is defined as a failure analysis region in the present invention, which refers to a region divided on a plane, and not the surface region of the sample as the failure analysis region. Further, the failure analysis region in the first step is rectangular in shape and has a size of 100 μm by 100 μm to 150 μm by 150 μm.
Secondly, a plurality of metal layers from M1 to Mn which are sequentially stacked from bottom to top are arranged in the failure analysis area of the sample in the longitudinal direction, wherein the failure analysis layer where the target position is located is Mx, and x is more than or equal to 1 and less than or equal to n; manufacturing a plurality of grooves surrounding the target position on the failure analysis area by using the laser cutting machine; the bottom of the groove is positioned at the depth position on or below the Mx +2 metal layer; a plurality of grooves surrounding the target location are communicated with each other in an adjacent mode, and a failure analysis area of the grooves surrounding the target location is divided into independent areas based on failure analysis relative to other areas of the sample. In the M1-Mn metal layers stacked in sequence from bottom to top, M1 is a first metal layer at the lowest position in the multiple metal layers, M2 is a second metal layer located above the first metal layer, and so on, Mx is an x-th metal layer, Mn is an n-th metal layer, wherein a failure analysis layer where the target position is located is Mx, which refers to a metal layer where the target position for failure analysis is located. The bottom depths of the plurality of grooves formed by the laser cutting machine are located at two or less layers above the failure analysis layer Mx.
Further, the number of the grooves surrounding the failure analysis area in the second step of this embodiment is four, as shown in fig. 2, fig. 2 is a schematic view of a sample surface provided with grooves according to the present invention, and the four grooves in this embodiment are respectively located at four positions, i.e., upper, lower, left, and right, of the failure analysis area. Further, the failure analysis area of the sample in the second step is provided with the metal layers M1-M6 which are sequentially stacked from bottom to top in the longitudinal direction. Still further, the failure analysis layer of the target position in the second step is M1, and the bottom of the trench is located at a depth on or below the layer of the failure analysis layer M3. That is, if the failure analysis layer (metal layer) is M1 and the target location is located on the failure analysis layer M1, the trench bottom is located on two metal layers above the failure analysis layer M1, i.e., on the metal layer M3, or below the metal layer M3. As shown in fig. 2, the four grooves in fig. 2 are mutually communicated and adjacent to each other to form a channel surrounding the target position, and further, in the second step of the invention, the length of the groove is 50 μm and the width of the groove is 5 μm. As shown in fig. 3, fig. 3 is a schematic cross-sectional view of a trench surrounding a target site in a sample according to the present invention. When the groove is manufactured, the laser mark of the laser cutting machine is positioned at a predetermined position, and then a sample is cut to form the groove. The trench bottom in fig. 3 extends deep inside the Substrate (SI).
And thirdly, placing the sample on a polishing machine, carrying out layer removal grinding on the failure analysis area surrounded by the groove, observing a grinding position by using an optical microscope in the grinding process until the metal layer above the failure analysis layer Mx is removed, and exposing a target position in the failure analysis layer Mx. In the embodiment, the failure analysis layer is M1, and the metal layers M2 to M6 above the failure analysis layer M1 are polished until the target position on the failure analysis layer M1 is exposed.
Example two
The present embodiment provides a failure analysis delamination method, as shown in fig. 7, and fig. 7 is a flowchart illustrating the failure analysis delamination method according to the present invention. The failure analysis delamination method of the embodiment at least comprises the following steps:
firstly, intercepting a sample and putting the sample into a laser cutting machine, and determining a failure analysis area of the sample and a target position on the failure analysis area; as shown in fig. 1, fig. 1 is a schematic diagram showing a target position on a failure region in the present invention. The target position in fig. 1 refers to a position of a failure region where an object to be analyzed located on a metal layer below the uppermost metal layer is projected on the uppermost layer. Further, the failure analysis area in the first step is an area between two bonding pads. That is, the region between two pads (pads) is defined as a failure analysis region in the present invention, which refers to a region divided on a plane, and not the surface region of the sample as the failure analysis region. Further, the failure analysis region in the first step is rectangular in shape and has a size of 100 μm by 100 μm to 150 μm by 150 μm.
Secondly, a plurality of metal layers from M1 to Mn which are sequentially stacked from bottom to top are arranged in the failure analysis area of the sample in the longitudinal direction, wherein the failure analysis layer where the target position is located is Mx, and x is more than or equal to 1 and less than or equal to n; manufacturing a plurality of grooves surrounding the target position on the failure analysis area by using the laser cutting machine; the bottom of the groove is positioned at the depth position on or below the Mx +2 metal layer; a plurality of grooves surrounding the target location are communicated with each other in an adjacent mode, and a failure analysis area of the grooves surrounding the target location is divided into independent areas based on failure analysis relative to other areas of the sample. Among the M1-Mn metal layers stacked in sequence from bottom to top, M1 is a first metal layer located at the lowest position in the multilayer metal layers, M2 is a second metal layer located above the first metal layer, and so on, Mx is an x-th metal layer, Mn is an n-th metal layer, wherein a failure analysis layer where the target position is located is Mx, which refers to a metal layer where the target position for failure analysis is located. The bottom depths of the plurality of grooves formed by the laser cutting machine are located at two or less layers above the failure analysis layer Mx.
Further, the number of the grooves surrounding the failure analysis area in the second step of this embodiment is four, as shown in fig. 2, fig. 2 is a schematic view of a sample surface provided with grooves according to the present invention, and the four grooves in this embodiment are respectively located at four positions, i.e., upper, lower, left, and right, of the failure analysis area. Further, the failure analysis area of the sample in the second step is provided with the metal layers M1-M6 which are sequentially stacked from bottom to top in the longitudinal direction. Still further, the failure analysis layer of the target position in the second step is M1, and the bottom of the trench is located inside the substrate. That is, if the failure analysis layer (metal layer) is M1 and the target position is on the failure analysis layer M1, the bottom of the trench is located at a position inside the substrate, whereas the deepest position of the bottom of the trench is located inside the substrate in the present invention. Thus, the grooves do not completely separate the failure analysis region on the sample from the sample, but are independently divided. That is, the failure analysis region of the trench surrounding the target site is divided into independent regions based on failure analysis with respect to other regions of the sample. As shown in fig. 2, the four grooves in fig. 2 are mutually communicated and adjacent to each other to form a channel surrounding the target position, and further, in the second step of the invention, the length of the groove is 50 μm and the width of the groove is 5 μm. As shown in fig. 3, fig. 3 is a schematic cross-sectional view of a trench surrounding a target site in a sample according to the present invention. When the groove is manufactured, the laser mark of the laser cutting machine is positioned at a predetermined position, and then a sample is cut to form the groove. The trench bottom in fig. 3 extends deep inside the Substrate (SI).
And thirdly, placing the sample on a polishing machine, carrying out layer removal grinding on the failure analysis area surrounded by the groove, observing a grinding position by using an optical microscope in the grinding process until the metal layer above the failure analysis layer Mx is removed, and exposing a target position in the failure analysis layer Mx. In the embodiment, the failure analysis layer is M1, and the metal layers M2 to M6 above the failure analysis layer M1 are polished until the target position on the failure analysis layer M1 is exposed.
Furthermore, the method also comprises a fourth step of putting the ground sample into a polyion beam for TEM sample preparation.
As shown in fig. 4, fig. 4 shows the focused ion beam images of two regions after delamination on the sample of the present invention, wherein region a is not provided with trenches and region B is provided with trenches. Referring to fig. 5 and 6, fig. 5 shows a focused ion beam image of region a of fig. 4; fig. 6 shows a focused ion beam image of region B in fig. 4. Through the comparison graph of fig. 4 and fig. 5, it is obvious that two adjacent positions are seen, the positions of four deep grooves with the length of 50um x 5um, which are not arranged by the laser cutting machine all around, are only the uppermost layer of the deep grooves which are quickly ground, and the positions of four deep grooves with the length of 50um x 5um, which are arranged by the laser cutting machine all around, are already ground to the metal layer M1, so the comparison is very obvious, the whole grinding process takes about 10 minutes, and compared with the two existing methods, the advantages of the two methods are both considered.
In conclusion, the failure analysis layer removing method provided by the invention can be used for shortening the sample grinding time and enhancing the efficiency while ensuring the accuracy and effectiveness of chip layer removal. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. A failure analysis delamination method, comprising at least the steps of:
firstly, intercepting a sample and putting the sample into a laser cutting machine, and determining a failure analysis area of the sample and a target position on the failure analysis area;
secondly, a plurality of metal layers from M1 to Mn which are sequentially stacked from bottom to top are arranged in the failure analysis area of the sample in the longitudinal direction, wherein the failure analysis layer where the target position is located is Mx, and x is more than or equal to 1 and less than or equal to n; manufacturing a plurality of grooves surrounding the target position on the failure analysis area by using the laser cutting machine; the bottom of the groove is positioned at the depth position on or below the Mx +2 metal layer; a plurality of grooves surrounding the target position are mutually communicated in an adjacent mode, and a failure analysis area of the grooves surrounding the target position is divided into independent areas based on failure analysis relative to other areas of the sample;
and thirdly, placing the sample on a polishing machine, carrying out layer removal grinding on the failure analysis area surrounded by the groove, observing a grinding position by using an optical microscope in the grinding process until the metal layer above the failure analysis layer Mx is removed, and exposing a target position in the failure analysis layer Mx.
2. The failure analysis delamination method of claim 1, wherein: the failure analysis area in the first step is an area between two bonding pads.
3. The failure analysis delamination method of claim 2, wherein: the failure analysis area in the first step is rectangular, and the size of the failure analysis area is 100 mu m by 100 mu m to 150 mu m by 150 mu m.
4. The failure analysis delamination method of claim 1, wherein: and in the second step, the number of the grooves surrounding the failure analysis area is four, and the grooves are respectively positioned at four positions, namely the upper position, the lower position, the left position and the right position of the failure analysis area.
5. The failure analysis delamination method of claim 1, wherein: and in the second step, the failure analysis area of the sample is provided with the metal layers M1-M6 which are sequentially stacked from bottom to top in the longitudinal direction.
6. The failure analysis delamination method of claim 5, wherein: and in the second step, the failure analysis layer of the target position is M1, and the bottom of the groove is positioned at the position of the depth on or below the M3 layer of the failure analysis layer.
7. The failure analysis delamination method of claim 6, wherein: and in the second step, the failure analysis layer of the target position is M1, and the bottom of the groove is positioned in the substrate.
8. The failure analysis delamination method of claim 1, wherein: and in the second step, the length of the groove is 50 μm, and the width of the groove is 5 μm.
9. The failure analysis delamination method of claim 1, wherein: the method also comprises a fourth step of putting the ground sample into a polyion beam for TEM sample preparation.
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| CN116230528A (en) * | 2023-03-24 | 2023-06-06 | 胜科纳米(苏州)股份有限公司 | Chip delamination method |
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| CN103760177A (en) * | 2014-01-03 | 2014-04-30 | 武汉新芯集成电路制造有限公司 | Method for carrying out defect analysis based on three-dimensional TEM (Transmission Electron Microscope) sample |
| CN103913358A (en) * | 2014-04-10 | 2014-07-09 | 武汉新芯集成电路制造有限公司 | Preparation method and failure analysis method for transmission electron microscope (TEM) sample |
| CN108037146A (en) * | 2017-11-16 | 2018-05-15 | 长江存储科技有限责任公司 | Based on the transmission electron microscope sample preparation method non-precisely positioned |
| CN110031277A (en) * | 2019-04-29 | 2019-07-19 | 武汉光迅科技股份有限公司 | A kind of chip sample production method for failure analysis |
| CN110690176A (en) * | 2019-10-14 | 2020-01-14 | 长江存储科技有限责任公司 | Method for distinguishing target crystal grains and failure analysis method of packaged chip |
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| CN116230528A (en) * | 2023-03-24 | 2023-06-06 | 胜科纳米(苏州)股份有限公司 | Chip delamination method |
| CN116230528B (en) * | 2023-03-24 | 2024-01-09 | 胜科纳米(苏州)股份有限公司 | Chip delamination method |
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