CN111809222A - Wafer fixing device and wafer fixing method - Google Patents
Wafer fixing device and wafer fixing method Download PDFInfo
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- CN111809222A CN111809222A CN202010802270.XA CN202010802270A CN111809222A CN 111809222 A CN111809222 A CN 111809222A CN 202010802270 A CN202010802270 A CN 202010802270A CN 111809222 A CN111809222 A CN 111809222A
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 230000007246 mechanism Effects 0.000 claims abstract description 73
- 238000007789 sealing Methods 0.000 claims description 23
- 238000007747 plating Methods 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 238000009713 electroplating Methods 0.000 abstract description 16
- 238000001179 sorption measurement Methods 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 184
- 230000008569 process Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 238000005086 pumping Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/028—Electroplating of selected surface areas one side electroplating, e.g. substrate conveyed in a bath with inhibited background plating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- Chemical Kinetics & Catalysis (AREA)
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- Materials Engineering (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a wafer fixing device and a wafer fixing method, wherein the wafer fixing device comprises a clamping mechanism and a vacuum generating mechanism, wherein the clamping mechanism comprises a first end and a second end which can be close to each other; when the wafer is arranged between the first end and the second end, the first end and the wafer form a chamber isolated from the outside, and the vacuum generating mechanism is communicated with the chamber. According to the wafer fixing device and the wafer fixing method, the cavity formed by the wafer and the clamping mechanism is vacuumized, and the wafer is fixed in a physical clamping and vacuum adsorption mode, so that the warping of the wafer is effectively inhibited, the accuracy of wafer edge point contact is improved, the structure is simple, the operation is convenient, the electroplating uniformity is greatly improved, the local stress of the wafer can be reduced, the breakage rate of the wafer is reduced, and the productivity is improved.
Description
Technical Field
The invention relates to a wafer fixing device and a wafer fixing method.
Background
In the field of semiconductor electroplating, it is known that a wafer has a certain warpage, and the wafer electroplating is affected by the warpage without paying attention to and processing the warpage.
For example, when a wafer is placed on a wafer clamp, the wafer is warped, so that the surface of the wafer relative to the clamping mechanism is uneven and is easily clamped, and thus, the relative position is easily deviated, and the position accuracy of the edge of the wafer relative to the wafer clamp is reduced due to the small range of displacement change, so that the implementation and implementation effect of the subsequent process are affected. If the wafer is clamped by a large clamping force, the local stress on the wafer may be increased, resulting in wafer breakage.
Disclosure of Invention
The invention provides a wafer fixing device and a wafer fixing method, aiming at overcoming the defect that in the prior art, a wafer cannot be accurately fixed on a wafer clamp due to the warping relationship and the implementation effect of a subsequent process is influenced.
The invention solves the technical problems through the following technical scheme:
a wafer holding apparatus includes a chucking mechanism and a vacuum generating mechanism, the chucking mechanism including a first end and a second end which are accessible to each other;
when the wafer is arranged between the first end and the second end, the first end and the wafer form a chamber isolated from the outside, and the vacuum generating mechanism is communicated with the chamber.
This wafer fixing device generates the cavity evacuation that the mechanism will form between first end and the wafer through setting up the vacuum to simultaneously through the fixed wafer of physics clamp and vacuum adsorption's mode, thereby effectively restrain the warpage of wafer, improve the accuracy of wafer edge point contact, and simple structure, convenient operation, very big improvement the homogeneity of electroplating, and can reduce the local atress of wafer, thereby reduce the breakage rate of wafer, improved the productivity.
Preferably, a side of the first end facing the wafer has a groove, and the groove and the wafer together form the chamber.
The above-described arrangement provides a preferred implementation of the chamber formed by the first end and the wafer.
Preferably, one side of the first end facing the wafer is further provided with a sealing strip, the sealing strip is used for being in direct contact with the wafer, and the sealing strip is arranged around the groove.
The sealing strip is used for directly contacting with the wafer so as to achieve the purpose of sealing and isolating. When the wafer is placed on the first end, the wafer is in relatively flexible contact with the surface of the first end, so that the second end can completely attach the relatively warped wafer to the first end without applying large pressure.
Preferably, the groove is concentrically arranged with the wafer, and the diameter of the groove wall of the groove is smaller than that of the wafer.
The above-described structural arrangement provides a preferred implementation of the recess on the first end.
Preferably, the air port of the vacuum generating mechanism communicated to the chamber is arranged on the bottom surface of the groove, so as to improve the uniformity of the gas in the chamber when the vacuum generating mechanism extracts the gas in the chamber.
Preferably, the vacuum generating mechanism is communicated to the cavity through an air pipe, and a pressure relief port is arranged on the air pipe.
Through setting up the pressure release mouth, can improve the efficiency of removing the negative pressure in the chamber.
Preferably, the clamping mechanism further comprises a seal disposed between the second end and the wafer.
By arranging the sealing member between the second end and the wafer, the situation that the second end is in rigid contact with the wafer to cause wafer breakage is avoided.
Preferably, the peripheral side of the first end and the peripheral side of the second end both extend out of the edge of the wafer, and the peripheral side of the second end further extends toward the direction of the first end and is positioned on the peripheral side surface of the first end, so that the purpose that the second end is directly positioned at the first end is achieved, and the reliability of the relative positions of the first end and the second end of the clamping mechanism is improved when the first end and the second end are fixed.
Preferably, the first end is in contact with the non-plating surface of the wafer, so as to prevent the chamber for vacuum fixing the wafer from occupying the plating surface of the wafer and influencing the implementation of the plating process.
A wafer fixing method comprises the following steps:
placing a wafer on a clamping mechanism, so that the wafer and the clamping mechanism form a chamber isolated from the outside;
and vacuumizing the chamber, and fixing the wafer through the clamping mechanism.
According to the wafer fixing method, the chamber formed by the wafer and the clamping mechanism is vacuumized, and the wafer is fixed in a physical clamping and vacuum adsorption mode, so that the warping of the wafer is effectively inhibited, the accuracy of wafer edge point contact is improved, the structure is simple, the operation is convenient, the electroplating uniformity is greatly improved, the local stress of the wafer can be reduced, the breakage rate of the wafer is reduced, and the productivity is improved.
Preferably, in the step of evacuating the chamber and fixing the wafer by the clamping mechanism, the wafer is fixed by the clamping mechanism, and the chamber is evacuated after the clamping mechanism is fixed.
Above-mentioned flow can guarantee the sealed effect of cavity when not evacuating, and then can improve the effect of taking the air out from the cavity to reach the negative pressure requirement better.
Preferably, in the step of placing the wafer on the clamping mechanism, so that the wafer and the clamping mechanism together form a chamber isolated from the outside, the non-electroplating surface of the wafer is placed on the end surface of the clamping mechanism, so that the wafer and the end surface together form a chamber isolated from the outside, and the chamber for vacuum fixing the wafer is prevented from occupying the electroplating surface of the wafer and affecting the implementation of the electroplating process.
The positive progress effects of the invention are as follows:
according to the wafer fixing device and the wafer fixing method, the cavity formed by the wafer and the clamping mechanism is vacuumized, and the wafer is fixed in a physical clamping and vacuum adsorption mode, so that the warping of the wafer is effectively inhibited, the accuracy of wafer edge point contact is improved, the structure is simple, the operation is convenient, the electroplating uniformity is greatly improved, the local stress of the wafer can be reduced, the damage rate of the wafer is reduced, and the productivity is improved.
Drawings
Fig. 1 is a schematic structural diagram of a wafer fixing device according to an embodiment of the invention.
Fig. 2 is a flowchart illustrating a wafer fixing method according to an embodiment of the invention.
Description of reference numerals:
first end 1, groove 11, air port 12 and air pipe 13
Sealing strip 4
Wafer 100, plating surface 100a
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention.
As shown in fig. 1, the present invention provides a wafer fixing apparatus, which includes a clamping mechanism disposed on a wafer chuck (not shown), the clamping mechanism includes a first end 1 and a second end 2, the first end 1 and the second end 2 can be close to each other and fixed to each other, so that when a wafer 100 is disposed between the first end 1 and the second end 2, the wafer 100 can be clamped and fixed by the first end 1 and the second end 2.
Specifically, when the wafer 100 is placed on the first end 1, a side surface of the wafer 100 facing the first end 1 and the first end 1 can jointly form a chamber 3 isolated from the outside, the wafer fixing device further comprises a vacuum generating mechanism (not shown in the figure), the vacuum generating mechanism is communicated with the chamber 3 through an air pipe 13, and air in the chamber 3 can be pumped away when the vacuum generating mechanism works, so that negative pressure is generated, the wafer 100 is attached to the first end 1, the flatness of the wafer 100 is improved, and the influence of warping of the wafer 100 on the implementation and the implementation quality of a subsequent electroplating process is reduced.
According to the wafer fixing device, the vacuum generating mechanism is arranged to vacuumize the cavity 3 formed between the first end 1 and the wafer 100, so that the wafer 100 is fixed in a physical clamping and vacuum adsorption mode, the warping of the wafer 100 is effectively restrained, the accuracy of the edge point contact of the wafer 100 is improved, the structure is simple, the operation is convenient, the electroplating uniformity is greatly improved, the local stress of the wafer 100 can be reduced, the breakage rate of the wafer 100 is reduced, and the productivity is improved.
When the wafer 100 is fixed by the wafer fixing apparatus of the present embodiment, the vacuum generating mechanism may be turned on to vacuumize when the second end 2 and the first end 1 do not clamp the wafer 100, or may be turned on again to vacuumize when the second end 2 and the first end 1 clamp the wafer 100. The sequence of the above steps does not affect the wafer fixing device to fix the wafer 100.
Of course, preferably, after the wafer 100 is placed at the first end 1, the wafer 100 may be clamped on the first end 1 through the second end 2, so that the end of the wafer 100 tilted relative to the first end 1 can be attached to the surface of the first end 1, and then the vacuum generating mechanism is turned on to vacuumize, thereby preventing the air leakage of the chamber 3, improving the effect of extracting air from the chamber 3, and better meeting the requirement of negative pressure. In the above process, when the wafer 100 is clamped by the second end 2 on the first end 1, the clamping force applied by the second end 2 to the wafer 100 does not need to be too large, and only the end of the wafer 100 that is tilted relatively is required to be attached to the surface of the first end 1.
In addition, when the robot connected to the wafer chuck moves and carries the wafer 100, the wafer 100 moves or bounces under the action of the moving direction, and moves or bounces to an area outside the specification of the wafer chuck, and the edge of the wafer 100 is not in the specified position, so that liquid leakage, uneven conduction, even chip breakage, and the like occur during the electroplating process. According to the invention, the chamber 3 is arranged to further fix the wafer 100 in a vacuum adsorption mode, and the wafer 100 which moves to generate deviation can be sucked back to the specified position of the clamping mechanism (or the wafer clamp) by using continuous negative pressure, so that the situations of liquid leakage, uneven conduction, breakage of the wafer 100 and the like are avoided.
Therefore, the wafer fixing device not only can improve the warpage problem of the wafer 100, but also can prevent the wafer 100 from moving in the movement process of the manipulator, thereby improving the accuracy of edge point contact.
In this embodiment, the clamping mechanism is formed directly on the wafer chuck. Specifically, the first end 1 is a cover plate made of titanium plate, the cover plate is formed on the surface of the wafer chuck, and the second end 2 is a clamping member in a ring shape for pressing the edge of the wafer 100 onto the cover plate. In fig. 1, the upper surface of the wafer 100 is a plating surface 100a, and the lower surface of the wafer 100 is a non-plating surface, which together with the lid plate forms the chamber 3. After the wafer 100 is completely fixed on the wafer fixing device, the wafer chuck may be turned to orient the plating surface 100a of the wafer 100 to facilitate the subsequent plating process.
As shown in fig. 1, in the present embodiment, a side of the first end 1 facing the wafer 100 has a groove 11 and a sealing strip 4, wherein the groove 11 is used to form a chamber 3 capable of being evacuated together with the wafer 100. The shape and size of the recess 11 at the first end 1 can be determined by a person skilled in the art in view of the actual circumstances, e.g. in the present embodiment forming a cylindrical or approximately cylindrical chamber 3. The sealing strip 4 is used to directly contact the wafer 100 for sealing and isolating, and the sealing strip 4 is disposed around the groove 11 to improve the sealing degree of the chamber 3 formed by the wafer 100 and the groove 11 when the wafer 100 is placed on the first end 1.
Meanwhile, when the sealing strip 4 is arranged on the first end 1, the wafer 100 is relatively flexibly contacted with the surface of the first end 1 when being placed on the first end 1, so that the second end 2 can completely attach the relatively warped wafer 100 on the first end 1 without applying large pressure.
As can be seen, the groove 11 in the present embodiment is circular and is concentric with the wafer 100, and the diameter of the wall of the groove 11 is smaller than the diameter of the wafer 100, so as to form a chamber 3 with a substantially cylindrical shape, which may be 1/5-19/20 of the diameter of the wafer 100, and may have a height of 1.5 mm-2 mm. In this embodiment, the diameter of the chamber 3 is 80mm, the height thereof is 1.6mm, and the chamber 3 and the wafer 100 are concentrically disposed. The size of the cylinder can be determined by one skilled in the art to fit wafers of different sizes, such as 3 inches, 4 inches, 6 inches, 8 inches, 12 inches, etc.
Preferably, the diameter of the groove wall of the groove 11 should not be too small, so as to ensure the adsorption area of the first end 1 relative to the non-plating surface of the wafer 100, and further ensure the fixing effect of the wafer fixing device on the wafer 100.
The clamping mechanism further comprises a seal 5, the seal 5 being arranged between the second end 2 and the wafer 100. The sealing member 5 may be a flexible material such as a rubber pad, and the second end 2 contacts the wafer 100 through the sealing member 5, so as to prevent the wafer 100 from being damaged due to direct rigid contact between the second end 2 and the wafer 100. In this embodiment, the seal 5 is fixed to the second end 2. In this embodiment, the material of the sealing member 5 is fluororubber.
In addition, as can be seen from the figure, the peripheral sides of the first end 1 and the second end 2 of the clamping mechanism both extend out of the edge of the wafer 100, and the peripheral side 2a of the second end 2 also extends towards the first end 1 and is attached to the surface of the peripheral side 1a of the first end 1, so as to achieve the purpose that the second end 2 is directly positioned on the first end 1. This structural arrangement can improve fixture's first end 1 and second end 2 when fixed, the degree of accuracy of both relative positions.
In this embodiment, the vacuum generating mechanism is connected to the chamber 3 through a gas pipe 13, and a gas port 12 formed in the groove 11 by the gas pipe 13 is located on the bottom surface of the groove 11. The number of the ports 12 may be plural, and when the number of the ports 12 is 1, the ports 12 are provided at the center position of the groove 11. The air pipe 13 can be provided with a pressure relief opening, and the air pressure in the cavity 3 can be quickly and conveniently recovered by opening the pressure relief opening, so that the purpose of breaking vacuum is realized.
The wafer fixture may further be provided with a first gas pressure gauge for measuring the gas pressure in the chamber 3 or a first gas flow gauge for measuring the gas flow in the chamber 3, and the first gas pressure gauge and the first gas flow gauge may be installed at positions of the chamber 3 near the gas port 12.
In addition, the wafer fixing device can be further provided with a second gas pressure meter or a second gas flow meter, the second gas pressure meter can be used for measuring the pumping gas pressure of the gas, and the second gas flow meter can be used for measuring the pumping gas flow of the gas. Thus, the second gas pressure gauge and the second gas flow gauge may be mounted on the gas source position, i.e. the vacuum generating mechanism.
In this embodiment, the wafer fixing device is respectively installed with a first air pressure gauge and a second air pressure gauge. If the difference between the pressures detected by the first and second barometers is-10% to 10% of the pressure detected by the second barometer, the wafer 100 is considered to have a better sealing property with respect to the chamber 3, for example: if the air pressure detected by the second air pressure gauge is 0.1MPa and the air pressure detected by the first air pressure gauge is 0.09 MPa-0.11 MPa, the sealing performance of the wafer 100 relative to the chamber 3 can be considered to be better; on the contrary, if the pressure detected by the first pressure gauge is not within the range, the wafer 100 may be considered to have poor sealing performance with respect to the chamber 3. The detection mode is relatively more accurate and reliable, and can meet relatively higher reliability requirements in the field of semiconductor manufacturing.
Of course, in other embodiments, the above function may be implemented by a first gas flow meter instead of a first gas pressure meter, and may also be implemented by a second gas flow meter instead of a second gas pressure meter.
As shown in fig. 2, the present invention further provides a wafer fixing method, which includes the following steps:
s1, placing the wafer on the clamping mechanism to form a chamber isolated from the outside together with the clamping mechanism;
and S2, vacuumizing the chamber, and fixing the wafer through the clamping mechanism.
According to the wafer fixing method, the chamber formed by the wafer and the clamping mechanism is vacuumized, and the wafer is fixed in a physical clamping and vacuum adsorption mode, so that the warping of the wafer is effectively inhibited, the accuracy of wafer edge point contact is improved, the structure is simple, the operation is convenient, the electroplating uniformity is greatly improved, the local stress of the wafer can be reduced, the breakage rate of the wafer is reduced, and the productivity is improved.
Specifically, in step S1, the non-plating surface of the wafer may be placed on the end surface of the first end of the clamping mechanism, so that the wafer and the end surface of the first end form a chamber isolated from the outside, and the chamber for vacuum fixing the wafer is prevented from occupying the plating surface of the wafer and affecting the implementation of the plating process.
In addition, in step S2, the wafer may be fixed by the clamping mechanism, and the chamber may be vacuumized after the clamping mechanism is fixed, so as to fix the wafer by the clamping mechanism, thereby preventing the chamber from generating a gap between the wafer and the clamping mechanism, improving the effect of pumping air out of the chamber, and better meeting the requirement of negative pressure. When the wafer is fixed through the clamping mechanism, the clamping force applied to the wafer by the clamping mechanism does not need to be too large, and only the tilting end of the wafer needs to be attached to the clamping mechanism. Further, after the chamber is evacuated, the wafer may be further held by a holding mechanism, such as: the clamping force of the clamping mechanism on the wafer is improved, and a better fixing effect is obtained. In this case, since the wafer is partially warped by the vacuum force, there is no fear that the wafer is partially damaged by an excessive force applied thereto by the clamping force applied from the clamping mechanism.
Before electroplating the wafer, firstly implementing a wafer fixing method to fix the wafer placed on the wafer clamp by using vacuum; then, in the electroplating process, the vacuum can be maintained, so that the purpose of fixing the wafer is also realized; after the electroplating is finished, when the wafer needs to be taken down, the pressure relief step needs to be implemented, and the pressure relief step can be realized by opening a corresponding pressure relief valve in the vacuum pipeline.
While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that this is by way of example only, and that the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the spirit and scope of the invention, and these changes and modifications are within the scope of the invention.
Claims (12)
1. A wafer fixing device is characterized by comprising a clamping mechanism and a vacuum generating mechanism, wherein the clamping mechanism comprises a first end and a second end which can be close to each other;
when the wafer is arranged between the first end and the second end, the first end and the wafer form a chamber isolated from the outside, and the vacuum generating mechanism is communicated with the chamber.
2. The wafer fixture device of claim 1, wherein a side of the first end facing the wafer has a recess, the recess and the wafer together forming the chamber.
3. The wafer fixture device of claim 2, wherein the first end further has a sealing strip on a side thereof facing the wafer, the sealing strip being adapted to directly contact the wafer, the sealing strip being disposed around the groove.
4. The wafer holder as claimed in claim 2, wherein the recess is concentric with the wafer, and the diameter of the wall of the recess is smaller than the diameter of the wafer.
5. The wafer holder as claimed in claim 2, wherein the vacuum generating mechanism is provided with a gas port communicating with the chamber and disposed on a bottom surface of the recess.
6. The wafer fixing device of claim 1, wherein the vacuum generating mechanism is connected to the chamber through a gas pipe, and the gas pipe is provided with a pressure relief port.
7. The wafer fixture of claim 1, wherein the clamping mechanism further comprises a seal disposed between the second end and the wafer.
8. The wafer fixture device of claim 1, wherein a peripheral side of the first end and a peripheral side of the second end each extend beyond the edge of the wafer, the peripheral side of the second end further extending in a direction toward the first end and being positioned on a peripheral side surface of the first end.
9. The wafer holder of claim 1, wherein the first end contacts an electroless surface of the wafer.
10. A wafer fixing method is characterized by comprising the following steps:
placing a wafer on a clamping mechanism, so that the wafer and the clamping mechanism form a chamber isolated from the outside;
and vacuumizing the chamber, and fixing the wafer through the clamping mechanism.
11. The wafer fixing method as claimed in claim 10, wherein in the step of evacuating the chamber and fixing the wafer by the chucking mechanism, the wafer is fixed by the chucking mechanism and the chamber is evacuated after the fixing by the chucking mechanism is completed.
12. The method as claimed in claim 10, wherein in the step of placing the wafer on the chuck mechanism such that the wafer and the chuck mechanism form an isolated chamber, the non-plating surface of the wafer is placed on the end surface of the chuck mechanism such that the wafer and the end surface of the chuck mechanism form an isolated chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202010802270.XA CN111809222A (en) | 2020-08-11 | 2020-08-11 | Wafer fixing device and wafer fixing method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010802270.XA CN111809222A (en) | 2020-08-11 | 2020-08-11 | Wafer fixing device and wafer fixing method |
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| CN111809222A true CN111809222A (en) | 2020-10-23 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114752985A (en) * | 2022-05-06 | 2022-07-15 | 吉姆西半导体科技（无锡）有限公司 | Novel vacuum electroplating hanger |
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