CN111800115A - 硅ic-氮化镓混合驱动*** - Google Patents
硅ic-氮化镓混合驱动*** Download PDFInfo
- Publication number
- CN111800115A CN111800115A CN202010669155.XA CN202010669155A CN111800115A CN 111800115 A CN111800115 A CN 111800115A CN 202010669155 A CN202010669155 A CN 202010669155A CN 111800115 A CN111800115 A CN 111800115A
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- silicon
- power device
- driving
- bridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 97
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 59
- 239000010703 silicon Substances 0.000 title claims abstract description 59
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 81
- 230000010354 integration Effects 0.000 claims abstract description 18
- 238000007599 discharging Methods 0.000 claims abstract description 4
- 238000004806 packaging method and process Methods 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 13
- 230000003071 parasitic effect Effects 0.000 abstract description 13
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T90/00—Enabling technologies or technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02T90/10—Technologies relating to charging of electric vehicles
- Y02T90/16—Information or communication technologies improving the operation of electric vehicles
- Y02T90/167—Systems integrating technologies related to power network operation and communication or information technologies for supporting the interoperability of electric or hybrid vehicles, i.e. smartgrids as interface for battery charging of electric vehicles [EV] or hybrid vehicles [HEV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y04—INFORMATION OR COMMUNICATION TECHNOLOGIES HAVING AN IMPACT ON OTHER TECHNOLOGY AREAS
- Y04S—SYSTEMS INTEGRATING TECHNOLOGIES RELATED TO POWER NETWORK OPERATION, COMMUNICATION OR INFORMATION TECHNOLOGIES FOR IMPROVING THE ELECTRICAL POWER GENERATION, TRANSMISSION, DISTRIBUTION, MANAGEMENT OR USAGE, i.e. SMART GRIDS
- Y04S30/00—Systems supporting specific end-user applications in the sector of transportation
- Y04S30/10—Systems supporting the interoperability of electric or hybrid vehicles
- Y04S30/12—Remote or cooperative charging
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010669155.XA CN111800115A (zh) | 2020-07-13 | 2020-07-13 | 硅ic-氮化镓混合驱动*** |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010669155.XA CN111800115A (zh) | 2020-07-13 | 2020-07-13 | 硅ic-氮化镓混合驱动*** |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111800115A true CN111800115A (zh) | 2020-10-20 |
Family
ID=72808382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010669155.XA Pending CN111800115A (zh) | 2020-07-13 | 2020-07-13 | 硅ic-氮化镓混合驱动*** |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111800115A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112531675A (zh) * | 2020-12-10 | 2021-03-19 | 基合半导体(宁波)有限公司 | 驱动芯片及驱动*** |
CN117476631A (zh) * | 2023-12-26 | 2024-01-30 | 广东仁懋电子有限公司 | 一种氮化镓微波功率器件 |
LU503046B1 (en) * | 2022-10-31 | 2024-04-30 | Cambridge Gan Devices Ltd | Stand-by circuit |
-
2020
- 2020-07-13 CN CN202010669155.XA patent/CN111800115A/zh active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112531675A (zh) * | 2020-12-10 | 2021-03-19 | 基合半导体(宁波)有限公司 | 驱动芯片及驱动*** |
LU503046B1 (en) * | 2022-10-31 | 2024-04-30 | Cambridge Gan Devices Ltd | Stand-by circuit |
CN117476631A (zh) * | 2023-12-26 | 2024-01-30 | 广东仁懋电子有限公司 | 一种氮化镓微波功率器件 |
CN117476631B (zh) * | 2023-12-26 | 2024-03-22 | 广东仁懋电子有限公司 | 一种氮化镓微波功率器件 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: Room f405, no.388 Ruoshui Road, Suzhou Industrial Park, Suzhou area, Suzhou pilot Free Trade Zone, 215000, Jiangsu Province Applicant after: Suzhou Quantum Semiconductor Co.,Ltd. Address before: 215000 second teaching building, No. 150 benevolence Road, Suzhou Industrial Park, Jiangsu Applicant before: Suzhou Liangwei Semiconductor Co.,Ltd. |
|
CB02 | Change of applicant information | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20240521 Address after: Room 601-2, Building 1, Suzhou Nanocity, No. 99 Jinjihu Avenue, Suzhou Industrial Park, Suzhou Area, China (Jiangsu) Pilot Free Trade Zone, Suzhou City, Jiangsu Province, 215000 Applicant after: Suzhou Liangxin Microelectronics Co.,Ltd. Country or region after: China Address before: Room f405, no.388 Ruoshui Road, Suzhou Industrial Park, Suzhou area, Suzhou pilot Free Trade Zone, 215000, Jiangsu Province Applicant before: Suzhou Quantum Semiconductor Co.,Ltd. Country or region before: China |