CN111799360A - N-type PbTe-based thermoelectric material and preparation method thereof - Google Patents
N-type PbTe-based thermoelectric material and preparation method thereof Download PDFInfo
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Abstract
The invention provides an n-type PbTe-based thermoelectric material, which is prepared by doping PbTe with Bi and introducing in-situ coherent nanophase Cu1.75Te, the highest thermoelectric figure of merit ZT of the thermoelectric material obtained by the method is as high as 1.4 at 623K, and the average ZT is as high as 1.0 (300-.
Description
Technical Field
The invention relates to the technical field of thermoelectric materials, in particular to an n-type PbTe-based thermoelectric material and a preparation method thereof.
Background
The thermoelectric material can directly convert heat energy and electric energy, has the characteristics of small volume, high reliability, no pollutant discharge, wide application temperature range, environmental friendliness and the like, and is very suitable for recycling waste heat. The thermoelectric conversion technology actually utilizes the Seebeck effect (Seebeck) and Peltier effect (Peltier) of semiconductor thermoelectric materials to achieve direct conversion between thermal energy and electrical energy.
The performance of the thermoelectric material is determined by a dimensionless parameter thermoelectric figure of merit ZT ═ S2σ T/κ. Increasing the electrical conductivity σ and the thermoelectric potential S, while decreasing the thermal conductivity κ (κ being the sum of the carrier thermal conductivity κ e and the phonon thermal conductivity κ L) is the key to material optimization. The three physical quantities are interrelated: these three quantities are essentially determined by the intrinsic electronic band structure and scattering of electrons or holes, which places practical limits on the optimization of performance.
PbTe is one of the best intermediate-temperature thermoelectric materials, and is widely applied to the fields of factory waste heat recovery, engine waste heat recovery and the like. To our knowledge, the ZT values of p-type PbTe-based thermoelectric materials have been greatly improved in recent years, e.g., wu et al have improved ZT values to 2 or more. But the ZT value of n-type PbTe is relatively low compared to p-type. It is important to note that there is a need to maximize the efficiency of thermoelectric devices by exploiting the well-matched properties of p-type and n-type PbTe. Therefore, research on n-type PbTe materials is imminent.
Disclosure of Invention
Based on the technical problems existing in the background technology, the invention provides an n-type PbTe-based thermoelectric material, which is prepared by doping PbTe with Bi and introducing in-situ coherent nanophase Cu1.75Te, the highest thermoelectric figure of merit ZT of the thermoelectric material obtained by the method is as high as 1.4 at 623K, and the average ZT is as high as 1.0 (300-.
The invention provides an n-type PbTe-based thermoelectric material, which contains Pb1-xBixTe and Cu1.75Alloy of Te, Cu based on 100% by mass of the thermoelectric material1.75The mass fraction of Te is f%, wherein x is more than 0, and f is more than or equal to 0.
In the thermoelectric material, Pb1-xBixTe is derived from PbTe based thermoelectric material, part of Pb element is replaced by Bi element in equimolar way, Cu1.75Te is generated in discharge plasmaDuring sintering, CuO nano-particles are reduced to Cu in a reducing atmosphere, and then the Cu reacts with PbTe to generate Cu1.75Te。
Preferably, the chemical composition of the thermoelectric material is: pb1-xBixTe+f wt％Cu1.75Te, wherein x is more than 0 and less than or equal to 0.02, and f is more than 0 and less than or equal to 1.72.
Preferably, 0.0025. ltoreq. x.ltoreq.0.005, 0.86. ltoreq. f.ltoreq.1.72. For example, x may be 0.0025, 0.003, 0.0035, 0.004, 0.0045, 0.005, and f may be 0.86, 0.9, 1.1, 1.29, 1.5, 1.72.
The invention also provides a preparation method of the n-type PbTe-based thermoelectric material, which comprises the following steps:
(1) according to the chemical formula Pb1-xBixThe stoichiometric ratio of Te is obtained by mixing and smelting single substances Pb, Bi and Te to obtain a composition Pb1-xBixA molten ingot of Te, wherein x > 0;
(2) the composition obtained in the step (1) is Pb1-xBixMixing the Te melt ingot and the CuO nano particles according to a ratio, and grinding to obtain uniformly mixed composite powder;
(3) and (3) sintering the composite powder obtained in the step (2) to obtain the thermoelectric material.
The thermoelectric material prepared by the invention is Pb1-xBixTe and Cu1.75Te composite polycrystal PbTe thermoelectric material.
Preferably, the purities of the simple substances Pb, Bi and Te are all more than 99.99%.
Preferably, the melting temperature is 900-.
Preferably, the smelting time is 12-36h, further 24h, and can be 15h, 18h, 20h, 25h, 28h, 30h, 33h, 35h and the like.
Preferably, the rate of heating to the melting temperature is 2-6 ℃/min, and can also be 2 ℃/min, 3 ℃/min, 4 ℃/min, 5 ℃/min, 6 ℃/min and the like.
Preferably, the purity of the CuO nanoparticles is greater than 99%;
preferably, the mass fraction of the CuO nanoparticles is 0 to 5%, preferably 0.5 to 1%, based on 100% of the total mass of the composite powder.
Preferably, the grinding is wet hand grinding;
preferably, the dispersant used in the wet hand milling is alcohol, and further, the time of the wet hand milling is 0.2-2h, preferably 0.5h, and further, may be 0.2h, 0.4h, 0.6h, 0.8h, 1.0h, 1.2h, 1.4h, 1.6h, 1.8h, 2.0h and the like.
Preferably, the sintering is spark plasma sintering, and in the present invention, during the spark plasma sintering, the CuO nanoparticles are reduced to Cu in a reducing atmosphere and react with PbTe to generate Cu1.75Te in-situ coherent nanophase.
Preferably, the temperature of the spark plasma sintering is 500-600 ℃, further 550 ℃, and can be 520 ℃, 540 ℃, 560 ℃, 580 ℃, 600 ℃ and the like. When the sintering temperature is too low, the density of the sample is low, the thermoelectric property is poor, and when the sintering temperature is too high, the sample can be softened, and the preparation is influenced.
Preferably, the sintering pressure is 30 to 60MPa, more preferably 50MPa, and may be 30MPa, 40MPa, 45MPa, 55MPa, 60MPa, or the like.
Preferably, the sintering time is 5-20min, and can also be 5min, 7min, 9min, 10min, 12min, 15min, 17min, 19min, 20min and the like.
Preferably, the degree of vacuum of the sintering is preferably 1 to 10Pa, and may be 1Pa, 3Pa, 5Pa, 6Pa, 7Pa, 8Pa, 9Pa, 10Pa, or the like.
Preferably, the rate of heating to the sintering temperature is 50-150 deg.C/min, and can be 50 deg.C/min, 70 deg.C/min, 90 deg.C/min, 100 deg.C/min, 110 deg.C/min, 130 deg.C/min, 150 deg.C/min, etc.
The invention also provides a thermoelectric device comprising the n-type PbTe-based thermoelectric material.
Compared with the prior art, the invention has the following beneficial effects:
(1) the invention dopes and introduces in-situ coherent nanophase Cu by Bi1.75Te simultaneously adjusts the electric transport and the thermal transport performances of the PbTe-based thermoelectric material, and realizes the achievement of a high ZT value (1.4) at a lower temperature (623K). Meanwhile, due to the existence of the in-situ coherent nanophase, the thermoelectric performance of the low-temperature part is greatly improved, so that the average thermoelectric figure of merit ZT of the sample in the whole temperature range (300K-773K)aveThe application efficiency of thermoelectric material waste heat power generation and thermoelectric refrigeration can be greatly improved by up to 1.0.
(2) The invention adopts the conventional powder metallurgy method to prepare: firstly preparing a Bi element doped n-type PbTe base thermoelectric material by adopting a vacuum melting method, then uniformly mixing the material with CuO nano-particles by adopting a wet hand mill, and finally preparing the Cu-containing nano-particles by sintering discharge plasma1.75The Te in-situ coherent nano-phase n-type PbTe-based thermoelectric material has excellent performance. The whole preparation method has the advantages of simple and convenient process, easy large-scale production, strong practicability and the like.
Drawings
FIG. 1 is an XRD spectrum of a thermoelectric material obtained in example 5 of the present invention.
FIG. 2 is a graph showing the power factor of thermoelectric materials obtained in examples 1 to 5 of the present invention as a function of temperature.
FIG. 3 is a graph of thermal conductivity versus temperature for thermoelectric materials obtained in examples 1-5 of the present invention.
FIG. 4 is a graph showing thermoelectric figure of merit ZT of thermoelectric materials obtained in examples 1 to 5 of the present invention as a function of temperature.
Detailed Description
For the purpose of facilitating an understanding of the present invention, the present invention will now be described by way of examples. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
An n-type PbTe-based thermoelectric material with chemical composition of Pb0.995Bi0.005Te specifically comprises the following components:
(1) weighing simple substance powder of Pb, Bi and Te with the purity of more than 99.99 percent according to the molar ratio of 0.995:0.005:1, mixing the weighed powder, sealing the powder in a vacuum quartz tube,then putting the vacuum quartz tube into a muffle furnace for smelting at 1050 ℃ for 24 hours to obtain the component Pb0.995Bi0.005Melting ingots of Te;
(2) the composition obtained in the step (1) is Pb0.995Bi0.005Grinding the Te melt ingot into powder in a hand grinding mode, wherein the hand grinding time is 0.5h, and obtaining powder;
(3) sintering the powder obtained in the step (2) by adopting a discharge plasma sintering method, sintering under the vacuum condition of below 10Pa, wherein the sintering temperature is 550 ℃, the heating rate is 100 ℃/min, the sintering pressure is 50MPa, the sintering time is 5min, and cooling to the room temperature along with the furnace after sintering is finished to obtain a target product, namely a target product with the chemical composition of Pb0.995Bi0.005Te, thermoelectric material.
Example 2
An n-type PbTe-based thermoelectric material with chemical composition of Pb0.995Bi0.005Te+0.43wt％Cu1.75Te specifically comprises the following components:
(1) weighing simple substance powder of Pb, Bi and Te with the purity of more than 99.99 percent according to the molar ratio of 0.995:0.005:1, mixing the weighed powder, sealing the mixed powder into a vacuum quartz tube, putting the vacuum quartz tube into a muffle furnace for smelting at the smelting temperature of 1050 ℃ for 24 hours to obtain the component Pb0.995Bi0.005Melting ingots of Te;
(2) mixing CuO nano-particles with the purity of more than 99% with Pb obtained in the step (1)0.995Bi0.005The Te melt ingot is CuO to Pb in mass ratio0.995Bi0.005Mixing Te (0.25: 99.75), uniformly mixing the Te and the Te by wet-process hand milling, wherein a wet-milled dispersant is alcohol, the wet milling time is 0.5h, and then drying to obtain composite powder;
(3) sintering the composite powder obtained in the step (2) by adopting a discharge plasma sintering method, sintering under the vacuum condition of below 10Pa, wherein the sintering temperature is 550 ℃, the heating rate is 100 ℃/min, the sintering pressure is 50MPa, the sintering time is 5min, and cooling to the room temperature along with the furnace after sintering is finished to obtain a target product, wherein the target product contains 99.57% of Pb0.995Bi0.005Te and 0.43% Cu1.75Te nano phase, namely the chemical composition of Pb0.995Bi0.005Te+0.43wt％Cu1.75Te, thermoelectric material.
Example 3
An n-type PbTe-based thermoelectric material with chemical composition of Pb0.995Bi0.005Te+0.86wt％Cu1.75Te specifically comprises the following components:
(1) weighing simple substance powder of Pb, Bi and Te with the purity of more than 99.99 percent according to the molar ratio of 0.995:0.005:1, mixing the weighed powder, sealing the mixed powder into a vacuum quartz tube, putting the vacuum quartz tube into a muffle furnace for smelting at the smelting temperature of 1050 ℃ for 24 hours to obtain the component Pb0.995Bi0.005Melting ingots of Te;
(2) mixing CuO nano-particles with the purity of more than 99% with Pb obtained in the step (1)0.995Bi0.005The Te melt ingot is CuO to Pb in mass ratio0.995Bi0.005Mixing Te (0.5: 99.5), uniformly mixing the Te and the Te by wet-process hand milling, wherein a wet-milled dispersant is alcohol, the wet milling time is 0.5h, and then drying to obtain composite powder;
(3) sintering the composite powder obtained in the step (2) by adopting a discharge plasma sintering method, sintering under the vacuum condition of below 10Pa, wherein the sintering temperature is 550 ℃, the heating rate is 100 ℃/min, the sintering pressure is 50MPa, the sintering time is 5min, and cooling to the room temperature along with the furnace after sintering is finished to obtain a target product, wherein the target product contains 99.14% of Pb0.995Bi0.005Te and 0.86% Cu1.75Te nano phase, namely the chemical composition of Pb0.995Bi0.005Te+0.86wt％Cu1.75Te, thermoelectric material.
Example 4
An n-type PbTe-based thermoelectric material with chemical composition of Pb0.995Bi0.005Te+1.29wt％Cu1.75Te specifically comprises the following components:
(1) weighing simple substance powder of Pb, Bi and Te with purity of more than 99.99% according to the molar ratio of 0.995:0.005:1, mixing the weighed powder, and sealing in vacuum stonePutting the vacuum quartz tube into a muffle furnace for smelting at 1050 ℃ for 24 hours to obtain the component Pb0.995Bi0.005Melting ingots of Te;
(2) mixing CuO nano-particles with the purity of more than 99% with Pb obtained in the step (1)0.995Bi0.005The Te melt ingot is CuO to Pb in mass ratio0.995Bi0.005Mixing Te (0.75: 99.25), uniformly mixing the Te and the Te by wet-process hand milling, wherein a wet-milled dispersant is alcohol, the wet milling time is 0.5h, and then drying to obtain composite powder;
(3) sintering the composite powder obtained in the step (2) by adopting a discharge plasma sintering method, sintering under the vacuum condition of below 10Pa, wherein the sintering temperature is 550 ℃, the heating rate is 100 ℃/min, the sintering pressure is 50MPa, the sintering time is 5min, and cooling to the room temperature along with a furnace after sintering is finished to obtain a target product, wherein the target product contains 98.71 percent of Pb0.995Bi0.005Te and 1.29% Cu1.75Te nano phase, namely the chemical composition of Pb0.995Bi0.005Te+1.29wt％Cu1.75Te, thermoelectric material.
Example 5
An n-type PbTe-based thermoelectric material with chemical composition of Pb0.995Bi0.005Te+1.72wt％Cu1.75Te specifically comprises the following components:
(1) weighing simple substance powder of Pb, Bi and Te with the purity of more than 99.99 percent according to the molar ratio of 0.995:0.005:1, mixing the weighed powder, sealing the mixed powder into a vacuum quartz tube, putting the vacuum quartz tube into a muffle furnace for smelting at the smelting temperature of 1050 ℃ for 24 hours to obtain the component Pb0.995Bi0.005Melting ingots of Te;
(2) mixing CuO nano-particles with the purity of more than 99% with Pb obtained in the step (1)0.995Bi0.005The Te melt ingot is CuO to Pb in mass ratio0.995Bi0.005Mixing Te at a ratio of 1:99, uniformly mixing the Te and the Te by wet-process hand milling, wherein a dispersant for wet milling is alcohol, the wet milling time is 0.5h, and then drying to obtain composite powder;
(3) will be provided withSintering the composite powder obtained in the step (2) by adopting a discharge plasma sintering method, sintering under the vacuum condition of below 10Pa, wherein the sintering temperature is 550 ℃, the heating rate is 100 ℃/min, the sintering pressure is 50MPa, the sintering time is 5min, and cooling to the room temperature along with the furnace after sintering is finished to obtain a target product, wherein the target product contains 98.28 percent of Pb0.995Bi0.005Te and 1.72% Cu1.75Te nano phase, namely the chemical composition of Pb0.995Bi0.005Te+1.72wt％Cu1.75Te, thermoelectric material.
The thermoelectric material obtained above was subjected to phase analysis, and the presence of Cu was detected1.75Te, as shown by XRD pattern in fig. 1. This indicates that during sintering, CuO nanoparticles are reduced to Cu in a reducing atmosphere and react with PbTe to form Cu1.75Te in-situ coherent nanophase, and the obtained thermoelectric material is Pb0.995Bi0.005Te and Cu1.75Te and realizes in-situ compounding.
The thermoelectric properties of the thermoelectric materials obtained in examples 1 to 5 were measured (including measurements of electric conductivity, thermoelectric potential, and thermal conductivity at different temperatures, in which the electric conductivity was measured by a four-electrode method, the thermoelectric potential was measured by a static dc method, and the thermal conductivity was measured by a laser flash method).
Fig. 2 is a graph showing the power factor of the thermoelectric materials obtained in examples 1 to 5 as a function of temperature, and it can be seen from fig. 2 that the thermoelectric materials prepared by the method have a high power factor, and particularly, examples 3 to 5 have a high power factor in the entire temperature range, and exhibit excellent electrical properties.
Fig. 3 is a graph of the thermal conductivity of the thermoelectric materials obtained in examples 1 to 5 as a function of temperature, and it can be seen from fig. 3 that the thermal conductivity of the thermoelectric materials decreases with increasing temperature, and the thermal conductivity of examples 2 to 5 is significantly decreased in the whole temperature range compared with that of example 1, which is beneficial to obtain higher thermoelectric performance.
Fig. 4 is a graph showing thermoelectric figure of merit ZT of thermoelectric materials obtained in examples 1 to 5 as a function of temperature, and it can be seen from fig. 4 that thermoelectric figure of merit of all examples is consistent with temperature variation, and compared with the same material, the present invention obtains a high ZT value at a lower temperature, and particularly, high thermoelectric performance with ZT of 1.4 is obtained at 623K in example 3. Furthermore, it is noted that examples 3-5 have a relatively high average ZT throughout the temperature region, which is advantageous for making high performance thermoelectric devices using this material.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered as the technical scope of the present invention, and equivalents and modifications thereof should be included in the technical scope of the present invention.
Claims (10)
1. An n-type PbTe-based thermoelectric material, characterized in that the thermoelectric material contains Pb1-xBixTe and Cu1.75Alloy of Te, Cu based on 100% by mass of the thermoelectric material1.75The mass fraction of Te is f%, wherein x is more than 0, and f is more than or equal to 0.
2. The n-type PbTe-based thermoelectric material of claim 1, wherein the chemical composition of the thermoelectric material is: pb1-xBixTe+fwt％Cu1.75Te, wherein x is more than 0 and less than or equal to 0.02, and f is more than 0 and less than or equal to 1.72.
3. The n-type PbTe-based thermoelectric material according to claim 1 or 2, wherein x is 0.0025. ltoreq. x.ltoreq.0.005 and f is 0.86. ltoreq. f.ltoreq.1.72.
4. A method for the preparation of an n-type PbTe-based thermoelectric material according to any of claims 1 to 3, characterized in that it comprises the steps of:
(1) according to the chemical formula Pb1-xBixThe stoichiometric ratio of Te is obtained by mixing and smelting single substances Pb, Bi and Te to obtain a composition Pb1- xBixA molten ingot of Te, wherein x > 0;
(2) the composition obtained in the step (1) is Pb1-xBixMixing the Te melt ingot and the CuO nano-particles according to the proportion,grinding to obtain uniformly mixed composite powder;
(3) and (3) sintering the composite powder obtained in the step (2) to obtain the thermoelectric material.
5. The method of claim 4, wherein the purities of said elemental Pb, Bi, Te are greater than 99.99%.
6. The method for preparing an n-type PbTe-based thermoelectric material according to claim 4 or 5, wherein the melting temperature is preferably 900-;
preferably, the rate of heating up to the smelting temperature is 2-6 ℃/min.
7. The method for preparing an n-type PbTe-based thermoelectric material according to any of claims 4 to 6, wherein the purity of the CuO nanoparticles is greater than 99%;
preferably, the mass fraction of the CuO nanoparticles is 0 to 5%, preferably 0.5 to 1%, based on 100% of the total mass of the composite powder.
8. The method for producing n-type PbTe-based thermoelectric material according to any of claims 4 to 7, wherein the grinding is wet hand grinding;
preferably, the dispersant used in the wet hand milling is alcohol, and further, the time of the wet hand milling is 0.2 to 2 hours, preferably 0.5 hour.
9. The method for producing an n-type PbTe-based thermoelectric material according to any of claims 4 to 8, wherein the sintering is spark plasma sintering; wherein, the sintering temperature of the discharge plasma is preferably 500-600 ℃, further 550 ℃, the sintering pressure is preferably 30-60MPa, further 50MPa, the sintering time is preferably 5-20min, and the sintering vacuum degree is preferably 1-10 Pa;
preferably, the rate of heating to the sintering temperature is 50-150 ℃/min.
10. A thermoelectric device comprising the n-type PbTe-based thermoelectric material according to any one of claims 1 to 3 or the n-type PbTe-based thermoelectric material produced by the production method according to any one of claims 4 to 9.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113421960A (en) * | 2021-07-09 | 2021-09-21 | 合肥工业大学 | Method for improving performance of n-type PbTe-based thermoelectric material by co-doping Cu and Bi |
| CN115521147A (en) * | 2022-09-22 | 2022-12-27 | 广西自贸区见炬科技有限公司 | Thermoelectric nanocomposite and preparation method thereof |
| CN115650181A (en) * | 2022-10-20 | 2023-01-31 | 中国科学院合肥物质科学研究院 | N-type PbTe-based thermoelectric material and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2896005A (en) * | 1954-12-15 | 1959-07-21 | Minnesota Mining & Mfg | Thermoelectric heat pump |
| JP2004014804A (en) * | 2002-06-06 | 2004-01-15 | Central Res Inst Of Electric Power Ind | Thermoelectric material and thermoelectric device |
| CN101421185A (en) * | 2006-03-16 | 2009-04-29 | 巴斯夫欧洲公司 | Doped lead tellurides for thermoelectric applications |
| WO2011149991A1 (en) * | 2010-05-24 | 2011-12-01 | The Regents Of The University Of California | Inorganic nanostructure-organic polymer heterostructures useful for thermoelectric devices |
| CN106006574A (en) * | 2016-05-11 | 2016-10-12 | 河南理工大学 | Rapid preparation method for thermoelectric compound |
| CN106252499A (en) * | 2016-09-19 | 2016-12-21 | 南方科技大学 | A kind of high-performance N-type PbTe base thermoelectricity material and preparation method thereof |
| CN106676322A (en) * | 2017-01-11 | 2017-05-17 | 同济大学 | Environment-friendly sulfur group stannide thermoelectric material and preparing method thereof |
| US20180162732A1 (en) * | 2015-06-01 | 2018-06-14 | Baoshan Iron & Steel Co., Ltd. | Method of preparing metal chalcogenide nanomaterials |
-
2020
- 2020-07-03 CN CN202010631093.3A patent/CN111799360B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2896005A (en) * | 1954-12-15 | 1959-07-21 | Minnesota Mining & Mfg | Thermoelectric heat pump |
| JP2004014804A (en) * | 2002-06-06 | 2004-01-15 | Central Res Inst Of Electric Power Ind | Thermoelectric material and thermoelectric device |
| CN101421185A (en) * | 2006-03-16 | 2009-04-29 | 巴斯夫欧洲公司 | Doped lead tellurides for thermoelectric applications |
| WO2011149991A1 (en) * | 2010-05-24 | 2011-12-01 | The Regents Of The University Of California | Inorganic nanostructure-organic polymer heterostructures useful for thermoelectric devices |
| US20180162732A1 (en) * | 2015-06-01 | 2018-06-14 | Baoshan Iron & Steel Co., Ltd. | Method of preparing metal chalcogenide nanomaterials |
| CN106006574A (en) * | 2016-05-11 | 2016-10-12 | 河南理工大学 | Rapid preparation method for thermoelectric compound |
| CN106252499A (en) * | 2016-09-19 | 2016-12-21 | 南方科技大学 | A kind of high-performance N-type PbTe base thermoelectricity material and preparation method thereof |
| CN106676322A (en) * | 2017-01-11 | 2017-05-17 | 同济大学 | Environment-friendly sulfur group stannide thermoelectric material and preparing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| LEI YANG等: ""n-type Bi-doped PbTe Nanocubes with Enhanced Thermoelectric Performance"", 《NANO ENERGY》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113421960A (en) * | 2021-07-09 | 2021-09-21 | 合肥工业大学 | Method for improving performance of n-type PbTe-based thermoelectric material by co-doping Cu and Bi |
| CN115521147A (en) * | 2022-09-22 | 2022-12-27 | 广西自贸区见炬科技有限公司 | Thermoelectric nanocomposite and preparation method thereof |
| CN115650181A (en) * | 2022-10-20 | 2023-01-31 | 中国科学院合肥物质科学研究院 | N-type PbTe-based thermoelectric material and preparation method thereof |
| CN115650181B (en) * | 2022-10-20 | 2023-11-17 | 中国科学院合肥物质科学研究院 | N-type PbTe-based thermoelectric material and preparation method thereof |
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