CN111785818A - GaN fundamental waveguide device based on porous lower cladding layer and preparation method and application thereof - Google Patents
GaN fundamental waveguide device based on porous lower cladding layer and preparation method and application thereof Download PDFInfo
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
Abstract
A GaN fundamental waveguide device based on a porous lower cladding layer comprises a substrate; a buffer layer disposed on the substrate; a current spreading layer disposed on the buffer layer; the porous lower cladding is arranged on the current spreading layer and used for reducing the leakage of the optical field to the direction of the substrate; and a waveguide core layer disposed on the porous lower cladding layer. Compared with most of existing GaN fundamental waveguides, the multi-hole lower cladding is adopted, the multi-hole AlGaN optical waveguide has larger refractive index difference than that of a single-layer AlGaN lower cladding, and the structure has better limiting effect on a transmitted optical field mode, so that the leakage of an optical field to the substrate direction is reduced.
Description
Technical Field
The invention belongs to the field of semiconductor integrated photoelectron, and particularly relates to a GaN fundamental waveguide device based on a porous lower cladding layer, and a preparation method and application thereof.
Background
The photoelectron integration is not affected by the parasitic effect of the electrical interconnection, so that the information processing can be better and rapidly carried out, the photoelectron integration becomes a research hotspot which is concerned by people in recent years, and along with the continuous development of the fields of biochemical sensing, nonlinear optics and the like, the photoelectron integration technology is gradually widened from the infrared band of communication to the visible band and the ultraviolet band. GaN is widely used for the preparation of light emitting and detecting devices as a wide bandgap semiconductor material, wherein blue light LEDs and lasers have been commercialized; meanwhile, most of short waves can penetrate through the GaN material, so that the loss of optical signal transmission is reduced, and therefore, the GaN system material is an ideal material suitable for short-wave photoelectric integration. For optoelectronic integration technology, a low-loss optical waveguide is an indispensable basic unit for optical signal transmission, however, the transmission loss of the existing GaN material system waveguide is often greater than 1dB/cm, and needs to be further optimized, and the transmission characteristics in the short wave aspect are still to be explored.
GaN fundamental waveguides are roughly classified into two types, depending on the substrate. One type is a waveguide epitaxial on a silicon substrate, and since silicon has strong absorption to short waves, in order to improve the confinement effect of an optical field in the waveguide, the substrate below the waveguide needs to be removed to form a suspended waveguide. Although the waveguide is surrounded by air, the optical field is effectively limited in the waveguide, but the optical field is not supported by a substrate, and the mechanical property and the heat dissipation performance are relatively poor. Another type is a waveguide epitaxial on sapphire, which in turn contains two structures, one directly epitaxial on a substrate and one requiring the epitaxy of low index AlGaN on a substrate to regrow GaN. In the former case, the transmission mode is well confined in GaN due to the refractive index of sapphire being 1.7, however, the interface of GaN and sapphire heteroepitaxy often has a large number of defects, and the accompanying optical absorption inevitably increases the transmission loss of the waveguide. For the second structure, the refractive index difference between AlGaN and GaN is small, the optical field limiting effect is low, so that the mode leaks to the substrate, and the epitaxial difficulty is increased due to high Al component.
In recent years, lateral porous GaN materials and their use in nitride optoelectronic devices have attracted attention. The porous GaN only needs to regulate and control the doping concentration of the gallium nitride in different epitaxial periods, and then the heavily doped region is selectively corroded by an electrochemical method, so that the transverse porous GaN is formed, and the refractive index is changed. Compared with the AlGaN lower cladding layer waveguide, the GaN waveguide taking the material as the lower cladding layer is expected to obtain high optical field limiting effect. In addition, the novel waveguide has better mechanical property and heat dissipation characteristic compared with a suspended waveguide. In addition, the core layer does not have defects caused by heteroepitaxy, so that the absorption of an interface is reduced, the transmission loss is lower, and the optical-electrical integrated transmission device is suitable for photoelectric integration.
Disclosure of Invention
In view of the above, it is a primary object of the present invention to provide a porous under-cladding-based GaN fundamental waveguide device, and a method for manufacturing and using the same, which are intended to at least partially solve at least one of the above-mentioned technical problems.
In order to achieve the above object, as one aspect of the present invention, there is provided a GaN fundamental waveguide device including:
a substrate;
a buffer layer disposed on the substrate;
a current spreading layer disposed on the buffer layer;
the porous lower cladding is arranged on the current spreading layer and used for reducing the leakage of the optical field to the direction of the substrate; and
and the waveguide core layer is arranged on the porous lower cladding layer.
As another aspect of the invention, there is also provided a method of manufacturing a GaN fundamental waveguide device,
as still another aspect of the present invention, there is also provided an application of the GaN fundamental waveguide device as described above or the GaN fundamental waveguide device obtained by the fabrication method as described above in the field of semiconductor integrated optoelectronics.
Based on the technical scheme, compared with the prior art, the GaN base waveguide device based on the porous lower cladding layer and the preparation method and application thereof have at least one of the following advantages:
1. compared with most of existing GaN fundamental waveguides, the multi-hole lower cladding is adopted, and the multi-hole material can provide larger refractive index difference than a single-layer AlGaN lower cladding, so that the structure has a better limiting effect on a transmitted light field mode, and the leakage of a light field to the substrate direction is reduced;
2. compared with a suspended GaN waveguide, the invention does not need to remove the substrate below the waveguide, has better mechanical property and better heat dissipation performance;
3. the core layer of the invention is less subject to loss caused by defects generated by heteroepitaxial growth, has smaller optical loss, and is a transmission device suitable for the field of semiconductor integrated photoelectricity.
Drawings
Fig. 1 is a schematic structural view of a GaN fundamental waveguide device according to an embodiment of the present invention;
FIG. 2 is a flow chart illustrating the fabrication of a GaN fundamental waveguide device according to an embodiment of the invention;
FIG. 3 is a schematic top view and cross-sectional view of the present invention;
fig. 4 is a scanning electron microscope picture of the porous DBR of fig. 1.
Description of reference numerals:
1-a substrate; 2-a buffer layer; 3-current spreading layer 4-porous lower cladding; 5-waveguide core layer.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
The invention aims to provide a GaN base waveguide device based on a porous lower cladding layer and beneficial to photoelectron integration, and also provides a method for preparing the device, wherein a transverse porous DBR (distributed Bragg reflector) or a single-layer transverse porous layer is used as the lower cladding layer of a GaN base waveguide, and the GaN base waveguide device realizes effective optical field limitation of a waveguide mode by directly growing alternately stacked light and heavy doped layers or single-layer heavy doped layers in an epitaxial structure and converting the lightly doped layers or the single-layer heavy doped layers into a DBR structure or a single-layer porous layer in which porous layers and non-porous layers are alternately stacked through transverse electrochemical corrosion. On the basis, the waveguide device is prepared by adopting the processes of common photoetching, metal evaporation and plasma etching. Compared with the existing GaN-based waveguide, the lower cladding has lower and adjustable refractive index, and the limiting effect of the optical field on the waveguide core layer is improved; in addition, the absorption loss caused by the interface defect is smaller, the optical field transmission loss is smaller, and a transmission device suitable for photoelectric integration is provided.
The invention discloses a GaN fundamental waveguide device, which is characterized by comprising:
a substrate;
a buffer layer disposed on the substrate;
a current spreading layer disposed on the buffer layer;
the porous lower cladding is arranged on the current spreading layer and used for reducing the leakage of the optical field to the direction of the substrate; and
and the waveguide core layer is arranged on the porous lower cladding layer.
In some embodiments of the invention, the porous lower cladding layer comprises any one of a single layer of porous GaN, a porous GaN DBR, a single layer of porous AlGaN, or a porous AlGaN DBR.
In some embodiments of the present invention, the porous DBR has a structure in which a nitride porous layer and a non-porous layer are alternately stacked;
in some embodiments of the present invention, the nitride comprises GaN and/or AlGaN.
In some embodiments of the present invention, the current spreading layer is made of a material including n-doped GaN or n-doped AlGaN, wherein the doping concentration is 1 × 1017To 5 × 1018cm-3；
In some embodiments of the invention, the three-dimensional structure of the waveguide core layer is a stripe or ridge;
in some embodiments of the present invention, the waveguide core layer is made of a material including GaN and/or AlGaN;
in some embodiments of the invention, the waveguide core layer has a width of 1 to 1.5 microns;
in some embodiments of the invention, the waveguide core layer has a thickness of 500 to 1500 nanometers.
In some embodiments of the present invention, the substrate is made of a material including at least one of sapphire, silicon, gallium nitride, or silicon carbide;
in some embodiments of the present invention, the substrate is a planar substrate or a patterned substrate.
The invention discloses a preparation method of a GaN fundamental waveguide device, which comprises the following steps:
sequentially growing a buffer layer, a current expansion layer, alternately stacked light and heavy doped layers or single-layer heavy doped layers and a waveguide core layer on a substrate;
performing transverse etching on the alternately stacked light and heavy doped layers or single-layer and heavy doped layers to convert the alternately stacked light and heavy doped layers or single-layer and heavy doped layers into porous DBRs or single-layer porous layers with alternately stacked porous layers and non-porous layers;
preparing a patterned metal pattern on the surface of the obtained porous DBR or the single-layer porous layer;
etching the waveguide core layer to the porous lower cladding or a position away from the porous lower cladding by a specific distance by taking the metal pattern as a metal mask;
and removing the metal mask plate to obtain the GaN fundamental waveguide device.
In some embodiments of the present invention, the method for performing lateral etching on the alternately stacked lightly and heavily doped layers or single heavily doped layers includes an electrochemical etching method;
wherein the doping concentration of the heavily doped layer is (0.5-1.5) × 1019cm-3The doping concentration of the lightly doped layer is (3.0 to 8.0) × 1016cm-3。
In some embodiments of the present invention, the metal pattern is made of a material including nickel.
In some embodiments of the present invention, the substrate is made of a material including at least one of sapphire, silicon, gallium nitride, or silicon carbide;
in some embodiments of the present invention, the substrate is a planar substrate or a patterned substrate.
The invention also discloses the application of the GaN fundamental waveguide device or the GaN fundamental waveguide device prepared by any one of the preparation methods in the field of semiconductor integrated photoelectronics.
In one exemplary embodiment, the present invention provides a porous under-clad GaN fundamental waveguide device comprising:
a substrate, wherein the material of the substrate is sapphire, silicon, gallium nitride or silicon carbide;
a buffer layer on the upper surface of the substrate;
the current expansion layer is positioned on the upper surface of the buffer layer;
a porous lower cladding layer located on the upper surface of the current spreading layer;
and the waveguide core layer is positioned on the upper surface of the porous lower cladding layer.
Wherein the bottom porous lower cladding layer is single-layer porous GaN, porous GaN DBR, single-layer porous AlGaN and porous AlGaNDBR; the porous lower cladding layer is a porous GaN DBR or a porous AlGaN DBR or a single-layer porous GaN or a single-layer porous AlGaN obtained by an electrochemical corrosion method.
Wherein the porous DBR is a DBR formed by alternately stacking a nitride porous layer and a non-porous layer.
And the waveguide core layer is in a strip or ridge shape in three-dimensional structure.
And the waveguide core layer is GaN or AlGaN.
The invention also provides a preparation method of the GaN fundamental waveguide device with the porous lower cladding, which comprises the following steps:
step 1: sequentially growing a buffer layer, a current expansion layer, alternately stacked light and heavy doping layers or single-layer heavy doping layers and a waveguide core layer on a substrate, wherein the substrate is made of sapphire, silicon, gallium nitride or silicon carbide;
step 2: performing transverse corrosion on the alternately stacked light and heavy doped layers or single-layer heavy doped layers by adopting an electrochemical corrosion method, and converting the transversely stacked light and heavy doped layers or single-layer heavy doped layers into porous DBRs or single-layer porous layers with alternately stacked porous layers and non-porous layers;
and step 3: spin-coating a photoresist on the surface of the porous wafer obtained in the step 2, defining a strip-shaped pattern on the spin-coated photoresist layer by adopting a photoetching technology, then evaporating metal nickel on the photoresist, stripping metal by utilizing a blue film to form strip-shaped metal nickel, and finally removing residual photoresist;
and 4, step 4: using strip-shaped metal nickel as a mask, and adopting a plasma enhanced etching technology to etch the waveguide core layer downwards to the porous lower cladding (as shown in a strip-shaped waveguide structure in figure 3) or a position (as shown in a ridge-shaped waveguide structure in figure 3) which is a specific distance (for example, 0.3-1.0 micron) away from the porous lower cladding;
and 5: and removing the metal mask to obtain the strip or ridge waveguide, and finishing the preparation of the device.
The technical solution of the present invention is further illustrated by the following specific embodiments in conjunction with the accompanying drawings. It should be noted that the following specific examples are given by way of illustration only and the scope of the present invention is not limited thereto.
Referring to fig. 1-4, the present invention provides a porous under-clad GaN fundamental waveguide device, comprising:
a substrate 1, which is a planar or graphic substrate, wherein the substrate 1 is made of sapphire, silicon, gallium nitride or silicon carbide;
a buffer layer 2, which is made on the upper surface of the substrate 1 and is composed of a low-temperature GaN nucleation layer and an unintentionally doped GaN layer, wherein the GaN nucleation layer is grown at low temperature (400-;
a current spreading layer 3 formed on the upper surface of the buffer layer 2 and made of n-type doped materialGaN or n-type doped AlGaN with a doping concentration of 1 × 1017-5×1018cm-3(ii) a The electrochemical corrosion is facilitated to form a porous lower cladding;
a porous lower cladding layer 4 which is arranged on the upper surface of the current spreading layer 3, wherein the material of the porous lower cladding layer 3 is a multi-period DBR formed by alternately stacking porous layers and non-porous layers of porous GaN, porous AlGaN or the combination of the above nitride materials;
wherein said porous under-cladding layer 3 is obtained by electrochemically etching alternately stacked lightly and heavily doped layers, wherein the heavily doped layer has a typical doping concentration of 1 × 1019cm-3The typical doping concentration of the lightly doped layer is 5 × 1016cm-3The period number of the bottom porous DBR layer 3 is 5-20;
a waveguide core layer 5, without dopant, of GaN or AlGaN, typically 1-1.5 μm wide, on the upper surface of the porous lower cladding layer 3;
referring to fig. 2 in combination with fig. 1 and 3, the present invention provides a method for fabricating a porous under-clad GaN fundamental waveguide device, comprising the steps of:
step 1: sequentially growing a buffer layer, a current expansion layer, alternately stacked light and heavy doping layers or single-layer heavy doping layers and a waveguide core layer on a substrate 1;
wherein the substrate 1 is made of sapphire, silicon, gallium nitride or silicon carbide, and the thickness of the waveguide core layer is 500-1500 nm;
step 2: performing transverse corrosion on the alternately stacked light and heavy doped layers or single-layer heavy doped layers by adopting an electrochemical corrosion method, and converting the transversely stacked light and heavy doped layers or single-layer heavy doped layers into DBRs or single-layer porous layers with alternately stacked porous layers and non-porous layers; the porous DBR layer is formed by alternately stacking a nitride porous layer and a non-porous layer, and the forming material of the porous DBR layer is GaN, AlGaN or the combination material of the GaN and the AlGaN;
and step 3: spin-coating a photoresist on the surface of the porous GaN wafer obtained in the step 2, wherein the photoresist is a negative photoresist, then defining a strip pattern on the spin-coated photoresist layer by adopting a photoetching technology, then evaporating metal nickel on the wafer spin-coated with the photoresist by using an electron beam evaporation technology, after metal evaporation is carried out, then pasting a blue film on the metal, stripping off unnecessary metal by using the adhesion force of the blue film and the metal to form a strip of the metal nickel, and finally removing the residual photoresist;
and 4, step 4: etching the porous epitaxial wafer obtained in the step 2 by using the metal pattern prepared in the step 3 as a hard mask by adopting a plasma enhanced etching technology to etch the uppermost core layer, wherein for the strip-shaped structure waveguide, the core layer is required to be completely etched through until reaching the porous lower cladding layer; for ridge waveguides, only part of the core layer needs to be etched away. The schematic cross-sectional views of the two devices are shown in fig. 3, and after the etching is completed, the pattern defined in the step 3 is transferred into the core layer.
And 5: and (3) attaching a blue film to the metal-evaporated surface of the wafer obtained in the step (4), forcibly tearing off the blue film, stripping most of the redundant metal except the defined pattern, removing the redundant photoresist by using a stripping agent, and finally obtaining the GaN-based waveguide based on the porous lower cladding layer, wherein the core layer (4) is exposed in the air and is in a strip pattern in a top view, as shown in fig. 3.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A GaN fundamental waveguide device, comprising:
a substrate;
a buffer layer disposed on the substrate;
a current spreading layer disposed on the buffer layer;
the porous lower cladding is arranged on the current spreading layer and used for reducing the leakage of the optical field to the direction of the substrate; and
and the waveguide core layer is arranged on the porous lower cladding layer.
2. The GaN fundamental waveguide device of claim 1,
the porous lower cladding layer includes any one of a single-layer porous GaN, a porous GaN DBR, a single-layer porous AlGaN, or a porous AlGaN DBR.
3. The GaN fundamental waveguide device of claim 3,
the porous DBR is a DBR formed by alternately stacking a nitride porous layer and a non-porous layer;
wherein the nitride includes GaN and/or AlGaN.
4. The GaN fundamental waveguide device of claim 1,
the current expansion layer is made of n-type doped GaN or n-type doped AlGaN, wherein the doping concentration is 1 × 1017To 5 × 1018cm-3；
The three-dimensional structure of the waveguide core layer is a strip or ridge;
the waveguide core layer is made of GaN and/or AlGaN;
the width of the waveguide core layer is 1 to 1.5 micrometers;
the thickness of the waveguide core layer is 500-1500 nm.
5. The GaN fundamental waveguide device of claim 1,
the substrate is made of at least one of sapphire, silicon, gallium nitride or silicon carbide;
the substrate is a planar substrate or a graphic substrate.
6. A preparation method of a GaN fundamental waveguide device comprises the following steps:
sequentially growing a buffer layer, a current expansion layer, alternately stacked light and heavy doped layers or single-layer heavy doped layers and a waveguide core layer on a substrate;
performing transverse etching on the alternately stacked light and heavy doped layers or single-layer and heavy doped layers to convert the alternately stacked light and heavy doped layers or single-layer and heavy doped layers into porous DBRs or single-layer porous layers with alternately stacked porous layers and non-porous layers;
preparing a patterned metal pattern on the surface of the obtained porous DBR or the single-layer porous layer;
etching the waveguide core layer to the porous lower cladding or a position away from the porous lower cladding by a specific distance by taking the metal pattern as a metal mask;
and removing the metal mask plate to obtain the GaN fundamental waveguide device.
7. The production method according to claim 6,
the method for transversely etching the alternately stacked light and heavy doped layers or single-layer heavy doped layers comprises an electrochemical etching method;
wherein the doping concentration of the heavily doped layer is (0.5-1.5) × 1019cm-3The doping concentration of the lightly doped layer is (3.0 to 8.0) × 1016cm-3。
8. The production method according to claim 6,
the metal pattern is made of a material including nickel.
9. The production method according to claim 6,
the substrate is made of at least one of sapphire, silicon, gallium nitride or silicon carbide;
the substrate is a planar substrate or a graphic substrate.
10. Use of the GaN fundamental waveguide device according to any one of claims 1 to 5 or the GaN fundamental waveguide device obtained by the production method according to any one of claims 6 to 9 in the field of semiconductor integrated optoelectronics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010666456.7A CN111785818B (en) | 2020-07-10 | 2020-07-10 | GaN fundamental waveguide device based on porous lower cladding layer and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010666456.7A CN111785818B (en) | 2020-07-10 | 2020-07-10 | GaN fundamental waveguide device based on porous lower cladding layer and preparation method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111785818A true CN111785818A (en) | 2020-10-16 |
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