CN111744870A - Cleaning method for semiconductor device after gold-tin soldering - Google Patents
Cleaning method for semiconductor device after gold-tin soldering Download PDFInfo
- Publication number
- CN111744870A CN111744870A CN202010587560.7A CN202010587560A CN111744870A CN 111744870 A CN111744870 A CN 111744870A CN 202010587560 A CN202010587560 A CN 202010587560A CN 111744870 A CN111744870 A CN 111744870A
- Authority
- CN
- China
- Prior art keywords
- semiconductor device
- water
- cleaning
- gold
- cleaning solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 139
- 238000004140 cleaning Methods 0.000 title claims abstract description 137
- 238000005476 soldering Methods 0.000 title claims abstract description 40
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 227
- 238000002791 soaking Methods 0.000 claims abstract description 60
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 239000007788 liquid Substances 0.000 claims abstract description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 33
- 239000000126 substance Substances 0.000 claims description 28
- 150000002430 hydrocarbons Chemical class 0.000 claims description 27
- 239000004215 Carbon black (E152) Substances 0.000 claims description 26
- 229930195733 hydrocarbon Natural products 0.000 claims description 26
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 22
- 239000012459 cleaning agent Substances 0.000 claims description 21
- 150000002576 ketones Chemical class 0.000 claims description 19
- 239000004094 surface-active agent Substances 0.000 claims description 17
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 16
- 229910052731 fluorine Inorganic materials 0.000 claims description 16
- 239000011737 fluorine Substances 0.000 claims description 16
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000008139 complexing agent Substances 0.000 claims description 14
- 229920002134 Carboxymethyl cellulose Polymers 0.000 claims description 13
- 239000001768 carboxy methyl cellulose Substances 0.000 claims description 13
- 235000010948 carboxy methyl cellulose Nutrition 0.000 claims description 13
- 239000008112 carboxymethyl-cellulose Substances 0.000 claims description 13
- 229920001577 copolymer Polymers 0.000 claims description 13
- 239000004115 Sodium Silicate Substances 0.000 claims description 11
- 239000002518 antifoaming agent Substances 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 11
- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 11
- 235000019795 sodium metasilicate Nutrition 0.000 claims description 11
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000012752 auxiliary agent Substances 0.000 claims description 7
- 150000002148 esters Chemical class 0.000 claims description 7
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 6
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 claims description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- RNFAKTRFMQEEQE-UHFFFAOYSA-N Tripropylene glycol butyl ether Chemical compound CCCCOC(CC)OC(C)COC(O)CC RNFAKTRFMQEEQE-UHFFFAOYSA-N 0.000 claims description 6
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 claims description 6
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- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 claims description 6
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims description 6
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- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- BDOYKFSQFYNPKF-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid;sodium Chemical compound [Na].[Na].OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O BDOYKFSQFYNPKF-UHFFFAOYSA-N 0.000 claims description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 3
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- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 claims description 3
- 229910052816 inorganic phosphate Inorganic materials 0.000 claims description 3
- 229910052909 inorganic silicate Inorganic materials 0.000 claims description 3
- SNGREZUHAYWORS-UHFFFAOYSA-N perfluorooctanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F SNGREZUHAYWORS-UHFFFAOYSA-N 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- WPDDXKNWUVLZMQ-UHFFFAOYSA-M potassium;2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctanoate Chemical compound [K+].[O-]C(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F WPDDXKNWUVLZMQ-UHFFFAOYSA-M 0.000 claims description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 3
- 239000001509 sodium citrate Substances 0.000 claims description 3
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 3
- LWHQXUODFPPQTL-UHFFFAOYSA-M sodium;2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctanoate Chemical compound [Na+].[O-]C(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F LWHQXUODFPPQTL-UHFFFAOYSA-M 0.000 claims description 3
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 230000004907 flux Effects 0.000 abstract description 27
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 12
- 239000010931 gold Substances 0.000 abstract description 12
- 229910052737 gold Inorganic materials 0.000 abstract description 12
- 239000003344 environmental pollutant Substances 0.000 abstract description 5
- 231100000719 pollutant Toxicity 0.000 abstract description 5
- 239000000243 solution Substances 0.000 description 82
- 230000006872 improvement Effects 0.000 description 8
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- 238000003466 welding Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 229910052736 halogen Inorganic materials 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 4
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- 230000000052 comparative effect Effects 0.000 description 4
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- 150000004820 halides Chemical class 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 4
- 238000004506 ultrasonic cleaning Methods 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
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- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
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- 239000002253 acid Substances 0.000 description 2
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- 239000013543 active substance Substances 0.000 description 2
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- -1 halogen ions Chemical class 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
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- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
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- 239000011592 zinc chloride Substances 0.000 description 1
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/004—Surface-active compounds containing F
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D1/04—Carboxylic acids or salts thereof
-
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0026—Low foaming or foam regulating compositions
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D3/225—Natural or synthetic polysaccharides, e.g. cellulose, starch, gum, alginic acid or cyclodextrin etherified, e.g. CMC
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3707—Polyethers, e.g. polyalkyleneoxides
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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- C—CHEMISTRY; METALLURGY
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Abstract
The invention discloses a cleaning method of a semiconductor device after gold-tin soldering, which comprises the following steps: firstly, soaking a semiconductor device welded by gold and tin in cleaning solution; soaking the semiconductor device in a water tank filled with pure water, and removing the cleaning liquid on the semiconductor device; thirdly, soaking the semiconductor device in alcohol solution to remove pure water on the semiconductor device; fourthly, heating the semiconductor device and removing the alcohol on the semiconductor device. The cleaning method of the invention effectively removes the soldering flux and other pollutants after gold-tin soldering by the mutual matching of the steps (I), (II), (III) and (IV), thereby improving the reliability of the semiconductor device.
Description
Technical Field
The invention relates to the field of semiconductor devices, in particular to a method for cleaning a conductor device after gold and tin welding.
Background
With the gradual application of semiconductor devices in the high-power field, the heat productivity of semiconductors is higher, the heat conductivity coefficient of gold-tin soldering can reach 57 w/m.K, and the heat conductivity is the highest in solder. The welding mode of the existing industrial gold-tin welding large-scale mass production is scaling powder and reflow soldering. The flux is an auxiliary material for ensuring the smooth operation of the welding process, prevents the reoxidation of the surface during welding, reduces the surface tension of the solder and improves the welding performance.
The types of the flux used for gold-tin soldering mainly include inorganic flux, organic flux and resin flux.
Inorganic fluxes contain inorganic acids, mainly hydrochloric acid, hydrofluoric acid, etc., which must be cleaned very rigorously immediately after use, since any halide remaining on the workpiece causes severe corrosion.
The fluxing action of the organic fluxing agent is between that of the inorganic fluxing agent and that of the resin fluxing agent, and the organic fluxing agent is also an acidic and water-soluble flux. The water-soluble flux containing organic acid is based on lactic acid and citric acid.
The resin flux contains rosin as a main component.
Flux residue on semiconductor devices can present the following problems: decrease conductivity, cause migration or short circuit; non-conductive solids such as intruding into the device contact can cause poor bonding; the resin residue is excessive, and dust and sundries are adhered; affecting the reliability of the product.
The existing method is to put the semiconductor device into an ultrasonic cleaning tank with pure water for ultrasonic cleaning, and after the ultrasonic cleaning, the semiconductor device is put into an oven for baking and drying.
The above cleaning method has the following problems: 1. in the ultrasonic cleaning process, fine cracks exist between welding surfaces due to energy released by ultrasonic waves; 2. the water stain residue is remained after the water is directly used for cleaning the food in an oven.
Disclosure of Invention
The invention aims to solve the technical problem of providing a cleaning method for a semiconductor device after gold-tin soldering, which has good soldering flux removing effect, does not generate cracks on a soldering surface and does not have water stain residue.
In order to solve the technical problem, the invention provides a cleaning method of a semiconductor device after gold-tin soldering, which comprises the following steps:
soaking a semiconductor device subjected to gold-tin soldering in a cleaning solution, wherein the cleaning solution comprises at least one of a water-based cleaning solution, a semi-water-based cleaning solution and a hydrocarbon cleaning solution;
the water-based cleaning solution comprises sodium metasilicate, sodium hydroxide, sodium carbonate, ethylene oxide propylene oxide copolymer, carboxymethyl cellulose, a fluorine-containing surfactant, a complexing agent, an organic silicon defoaming agent and deionized water;
the semi-aqueous cleaning solution comprises tripropylene glycol butyl ether, diethylene glycol butyl ether, methoxy methyl butanol, tetrahydrofurfuryl alcohol, benzyl alcohol, N-methyl pyroli ketone, N-ethyl pyroli ketone and alkali, wherein the alkali is one or more of amine, imide or inorganic alkali salt, silicate or phosphate;
soaking the semiconductor device in a water tank filled with pure water, and removing the cleaning liquid on the semiconductor device;
thirdly, soaking the semiconductor device in alcohol solution to remove pure water on the semiconductor device;
fourthly, heating the semiconductor device and removing the alcohol on the semiconductor device.
As an improvement of the scheme, in the step (I), 1 liter of water-based cleaning solution comprises 30-80 g of sodium metasilicate, 10-30 g of sodium hydroxide, 20-50 g of sodium carbonate, 30-80 g of ethylene oxide propylene oxide copolymer, 3-10 g of carboxymethyl cellulose, 0-2 g of fluorine-containing surfactant, 0-5 g of complexing agent, 0-5 g of organosilicon defoaming agent and the balance of deionized water.
As an improvement of the above scheme, in the step (one), the fluorine-containing surfactant is one or more of sodium perfluorooctanoate, potassium perfluorooctanoate and perfluorooctanoic acid;
the complexing agent is one or more of sodium citrate, EDTA (ethylene diamine tetraacetic acid) disodium and EDTA tetrasodium.
As an improvement of the above scheme, in the step (one), the cleaning solution further includes an auxiliary agent, where the auxiliary agent includes at least one of a ketone substance, an alcohol substance, and an ester substance, where the ketone substance includes at least one of acetone and toluene isobutyl ketone; the alcohol substance comprises at least one of ethanol, propanol and butanol; the ester substance comprises at least one of ethyl acetate and butyl acetate.
As an improvement of the scheme, in the step (one), the hydrocarbon cleaning agent also comprises copper and phosphorus.
As an improvement of the scheme, in the step (I), the temperature of the cleaning solution is 50 +/-10 ℃, and the soaking time is 1-5 min.
As an improvement of the above scheme, in the step (two), a water inlet and a water outlet are arranged at the bottom of the water tank, the water inlet and the water outlet are connected through a pipeline, a circulating pump and a filter screen are arranged on the pipeline, the circulating pump pumps out pure water in the water tank from the water outlet, and the pumped pure water enters the water tank from the water inlet through the pipeline, so that the pure water in the water tank forms circulation.
As an improvement of the scheme, the semiconductor device is soaked in a water tank for at least twice water circulation cleaning, and the time of each circulation cleaning is 1-3 min;
the flow rate of the outlet water of the pure water in the water tank is 0.5-6 m/s, and the flow rate of the inlet water is 0.5-5 m/s.
As an improvement of the scheme, in the step (II), the conductivity of the pure water is less than or equal to 2 mu s/cm, and the temperature is 50 +/-10 ℃.
In the third step, the semiconductor device is soaked in alcohol for 1-5 min.
The implementation of the invention has the following beneficial effects:
the cleaning method of the invention adopts a cleaning agent to remove the soldering flux and other pollutants after gold-tin soldering through the mutual matching of the steps (I), (II), (III) and (IV), and the water-based cleaning agent utilizes the functions of wetting, emulsifying, permeating, dispersing, solubilizing and the like of a fluorine-containing surfactant, an emulsifier (carboxymethyl cellulose), a penetrant (ethylene oxide-propylene oxide copolymer) and the like to dissolve inorganic soldering flux; compared with the narrow-cut hydrocarbon cleaning agent, the hydrocarbon cleaning agent disclosed by the invention is composed of a chemical composition, is low in toxicity, low in odor and good in solubility, and can effectively dissolve organic components in the soldering flux; the semi-water-based cleaning solution effectively dissolves rosin in the resin scaling powder; the cleaning solution disclosed by the invention can effectively remove the influence of the soldering flux and other pollutants on the semiconductor device, and meanwhile, the gold-tin eutectic crystal and the semiconductor device are not damaged, so that the reliability of the semiconductor device is improved; in addition, the invention adopts alcohol and heating method to remove pure water of the semiconductor device, thereby avoiding residual water stain on the semiconductor device and further improving the reliability of the semiconductor device.
Drawings
FIG. 1 is a schematic view of the structure of the water tank in step (II) of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
The invention provides a cleaning method for a semiconductor device after gold-tin soldering, which comprises the following steps:
soaking a semiconductor device subjected to gold-tin soldering in a cleaning solution to remove soldering flux, wherein the cleaning solution comprises at least one of a water-based cleaning solution, a semi-water-based cleaning solution and a hydrocarbon cleaning solution;
it should be noted that, for cleaning different types of flux, different cleaning liquids are required. In particular, the method comprises the following steps of,
cleaning the inorganic scaling powder by using a water-based cleaning solution;
the organic scaling powder is cleaned by adopting a hydrocarbon type cleaning fluid;
the cleaning resin scaling powder adopts semi-water-based cleaning liquid.
The water-based cleaning solution comprises sodium metasilicate, sodium hydroxide, sodium carbonate, ethylene oxide propylene oxide copolymer, carboxymethyl cellulose, a fluorine-containing surfactant, a complexing agent, an organic silicon defoaming agent and deionized water.
The hydrocarbon cleaning agent comprises a component with a structural formula of CnH2n+2Is an isomeric hydrocarbon of the formula CnH2n+2Normal hydrocarbon with structural formula CnH2nOne or more compounds of cyclane and aromatic hydrocarbon.
The semi-aqueous cleaning solution comprises tripropylene glycol butyl ether, diethylene glycol butyl ether, methoxy methyl butanol, tetrahydrofurfuryl alcohol, benzyl alcohol, N-methyl pyroli ketone, N-ethyl pyroli ketone and alkali, wherein the alkali is one or more of amine, imide or inorganic alkali salt, silicate or phosphate.
The water-based cleaning agent of the invention utilizes the wetting, emulsifying, permeating, dispersing, solubilizing and other actions of a fluorine-containing surfactant, an emulsifier (carboxymethyl cellulose), a penetrant (ethylene oxide propylene oxide copolymer) and the like to dissolve inorganic scaling powder, and simultaneously, gold-tin eutectic crystals and semiconductor devices are not lost.
Compared with the narrow-cut hydrocarbon cleaning agent, the hydrocarbon cleaning agent disclosed by the invention is composed of a chemical composition, is low in toxicity, low in odor and good in solubility, effectively dissolves organic components in the soldering flux, and does not lose gold-tin eutectic crystals and semiconductor devices. Wherein, the isomeric hydrocarbon has a branched chain, and the isomeric hydrocarbon has good safety and small odor; the aromatic hydrocarbon contains benzene ring and has strong dissolving power.
The main component of the resin type flux is rosin. The semi-aqueous cleaning solution effectively dissolves rosin in the resin soldering flux, and simultaneously does not lose gold-tin eutectic crystals and semiconductor devices.
Preferably, 1 liter of water-based cleaning solution comprises 30-80 g of sodium metasilicate, 10-30 g of sodium hydroxide, 20-50 g of sodium carbonate, 30-80 g of ethylene oxide propylene oxide copolymer, 3-10 g of carboxymethyl cellulose, 0-2 g of fluorine-containing surfactant, 0-5 g of complexing agent, 0-5 g of organic silicon defoaming agent and the balance of deionized water.
More preferably, 1 liter of water-based cleaning solution comprises 40-70 g of sodium metasilicate, 20-30 g of sodium hydroxide, 30-40 g of sodium carbonate, 40-60 g of ethylene oxide propylene oxide copolymer, 4-7 g of carboxymethyl cellulose, 0-2 g of fluorine-containing surfactant, 1-3 g of complexing agent, 1-3 g of organosilicon defoaming agent and the balance of deionized water.
The fluorine-containing surfactant is one or more of sodium perfluorooctanoate, potassium perfluorooctanoate and perfluorooctanoic acid; the complexing agent is one or more of sodium citrate, EDTA (ethylene diamine tetraacetic acid) disodium and EDTA tetrasodium.
The water-based cleaning solution disclosed by the invention has the advantages that the permeation and capacity increasing effects of the water-based cleaning solution are improved by adjusting the contents of the active agent, the emulsifier and the penetrant, so that the cleaning effect of the water-based cleaning solution is further improved.
In order to improve the cleaning capacity, the hydrocarbon cleaning agent also comprises copper and phosphorus, the copper and the phosphorus are added in the hydrocarbon cleaning agent, the acid is neutralized in the initial stage of dissolving the soldering flux, the hydrocarbon cleaning agent has super-strong acid resistance, and the cleaning material is ensured not to be corroded.
It should be noted that the cleaning time can be shortened by raising the temperature of the cleaning liquid, but the reliability of the semiconductor device is affected by an excessively high temperature of the cleaning liquid, and the reliability of the semiconductor device is also affected if the semiconductor device is immersed in the cleaning liquid for an excessively long time. In order to shorten the cleaning time and improve the cleaning effect and reliability, the temperature of the cleaning solution is preferably 50 +/-10 ℃, and the soaking time is preferably 1-5 min.
Preferably, the temperature of the water-based cleaning solution is 55 +/-5 ℃, and the soaking time is 1-3 min.
Preferably, the temperature of the hydrocarbon cleaning fluid is 45 +/-5 ℃, and the soaking time is 2-4 min.
Preferably, the temperature of the pure solvent cleaning solution is 50 +/-5 ℃, and the soaking time is 1-3 min.
In order to improve the fluxing capacity of the soldering flux, active substances, such as zinc chloride, ammonium chloride, organic acids and halides thereof, organic amines and halides thereof, hydrazines and halides thereof, amide urea and the like, are often added. Although the flux has high fluxing capacity, halogen ions are difficult to clean, the ion residue is high, halogen elements (mainly chloride) have strong corrosivity, and the surfactant is mainly a fatty acid group or aromatic group nonionic surfactant and has the main functions of reducing the surface tension generated when the solder is contacted with the terminal pin metal, enhancing the surface wetting force and enhancing the penetrating force of the organic acid activator.
In order to remove the substances, the three types of cleaning solutions further comprise an auxiliary agent, wherein the auxiliary agent comprises at least one of a ketone substance, an alcohol substance and an ester substance, and the ketone substance comprises at least one of acetone and toluene isobutyl ketone; the alcohol substance comprises at least one of ethanol, propanol and butanol; the ester substance comprises at least one of ethyl acetate and butyl acetate.
Preferably, the addition amount of the auxiliary agent is 1-10%.
The main function of the ketone substance, the alcohol substance and the ester substance added in the cleaning solution is to dissolve the solid components in the soldering flux to form a uniform solution, and simultaneously, the oil stain on the metal surface can be cleaned, and the corrosion of halogen elements to devices is avoided.
In addition, since foreign matters in the reflow furnace and solder resist emissions remain after gold-tin soldering of the semiconductor device and affect the quality of the semiconductor device, the cleaning solution described above is also removed to remove not only the flux but also the foreign matters in the reflow furnace and the solder resist emissions.
Secondly, soaking the semiconductor device in a water tank filled with pure water;
because the cleaning liquid is organic, organic matters or inorganic matters on the substrate of the semiconductor device can be dissolved in the cleaning process, so that conductors or insulators are generated, and the substances can cause the risk of short circuit on the substrate and influence heat dissipation. Therefore, the invention removes the cleaning liquid remaining on the semiconductor device by pure water.
In order to ensure that the pure water can be in full contact with the cleaning liquid and quickly remove the cleaning liquid remained on the semiconductor device, the water tank is provided with a water circulation system and a filter screen, the pure water in the water tank forms water circulation through the circulation system, and the filter screen is used for filtering impurities in the water tank and keeping the cleaning effect.
Referring to fig. 1, a water inlet 11 and a water outlet 12 are arranged at the bottom of the water tank 1, the water inlet 11 and the water outlet 12 are connected through a pipeline 13, a circulating pump 14 and a filter screen 15 are arranged on the pipeline 13, the circulating pump 14 pumps pure water in the water tank 1 out of the water outlet 12, and the pumped pure water enters the water tank 1 through the pipeline 13 from the water inlet 11, so that the pure water in the water tank 1 is circulated.
In order to effectively remove the cleaning liquid and ensure that the pure water can be fully contacted with the cleaning liquid, the semiconductor device is further soaked in the water tank for at least two times of water circulation cleaning, and the time of each circulation cleaning is 1-3 min.
Preferably, the flow rate of the outlet water of the pure water in the water tank is 0.5-6 m/s, and the flow rate of the inlet water is 0.5-5 m/s. If the water flow of the outlet water is more than 6m/s and the water flow of the inlet water is more than 5m/s, the water flow is too large, so that large impact force is caused to the semiconductor device, and the semiconductor device is cracked or damaged; if the water flow of the outlet water is less than 0.5m/s and the water flow of the inlet water is less than 0.5m/s, the water flow is too small to remove the residual cleaning liquid and pollutants in the gap.
Preferably, the flow rate of the outlet water of the pure water in the water tank is 1-3 m/s, and the flow rate of the inlet water is 1-3 m/s.
The cleaning time can be shortened by raising the temperature of the pure water, but the reliability of the semiconductor device is affected by an excessively high temperature of the pure water. In order to shorten the cleaning time and improve the cleaning effect and reliability, it is preferable that the temperature of the pure water is 50 ± 10 ℃.
The conductivity of the pure water is less than or equal to 2 mus/cm, and if the conductivity of the pure water is more than 2 mus/cm, the purity of the water is insufficient, and not only the residual cleaning solution cannot be removed, but also secondary pollution is caused.
Thirdly, soaking the semiconductor device in alcohol solution;
the present invention replaces pure water remaining on a semiconductor device with an alcohol solution.
Since alcohol is an organic substance, if the soaking time is longer than 5min, organic or inorganic substances on the substrate of the semiconductor device are dissolved, so that some conductors or insulators are generated, and the substances can cause the risk of short circuit on the substrate and influence heat dissipation.
Preferably, the soaking time is 1-5 min.
Preferably, the soaking time is 1-3 min.
The concentration of the alcohol solution is 90-99%.
Fourthly, heating the semiconductor device and removing the alcohol on the semiconductor device.
Specifically, the semiconductor device is placed into an oven to be baked, and alcohol remained on the semiconductor device is evaporated, so that the alcohol on the semiconductor device is removed, and water stain remained on the semiconductor device is avoided.
Preferably, the heating temperature is 80-100 ℃, and the heating time is 1-5 min.
Since the water stain usually contains minerals, metal ions and the like, there is a risk of open circuit or short circuit of the semiconductor device, and the water stain covers the surface of the semiconductor device to affect the heat dissipation effect.
The cleaning method provided by the invention adopts the cleaning agent to remove the soldering flux and other pollutants after gold-tin soldering by the mutual matching of the steps (I), (II), (III) and (IV), thereby improving the reliability of the semiconductor device; in addition, the invention adopts alcohol and heating method to remove pure water of the semiconductor device, thereby avoiding residual water stain on the semiconductor device and further improving the reliability of the semiconductor device.
The invention will be further illustrated by the following specific examples
Example 1
Firstly, soaking a semiconductor device welded by gold and tin in a cleaning solution at the temperature of 50 ℃ for 3 min;
the cleaning solution comprises a water-based cleaning solution, wherein 1 liter of the water-based cleaning solution comprises 40g of sodium metasilicate, 20g of sodium hydroxide, 30g of sodium carbonate, 40g of ethylene oxide-propylene oxide copolymer, 5g of carboxymethyl cellulose, 1g of fluorine-containing surfactant, 1g of complexing agent, 1g of organic silicon defoaming agent and the balance of deionized water;
soaking the semiconductor device in a water tank filled with pure water, wherein the temperature of the pure water is 50 ℃, the soaking time is 2min, the water outlet flow speed of the pure water in the water tank is 1m/s, and the water inlet flow speed is 1 m/s;
thirdly, soaking the semiconductor device in 90% alcohol solution for 5 min;
and fourthly, putting the semiconductor device into an oven for heating, and removing the alcohol on the semiconductor device.
Example 2
Firstly, soaking a semiconductor device welded by gold and tin in a cleaning solution at the temperature of 60 ℃ for 1 min;
the cleaning solution comprises a water-based cleaning solution, wherein 1 liter of the water-based cleaning solution comprises 40g of sodium metasilicate, 20g of sodium hydroxide, 30g of sodium carbonate, 40g of ethylene oxide-propylene oxide copolymer, 5g of carboxymethyl cellulose, 1g of fluorine-containing surfactant, 1g of complexing agent, 1g of organic silicon defoaming agent and the balance of deionized water;
soaking the semiconductor device in a water tank filled with pure water, wherein the temperature of the pure water is 50 ℃, the soaking time is 3min, the water outlet flow speed of the pure water in the water tank is 2m/s, and the water inlet flow speed is 2 m/s;
thirdly, soaking the semiconductor device in 95% alcohol solution for 4 min;
and fourthly, putting the semiconductor device into an oven for heating, and removing the alcohol on the semiconductor device.
Example 3
Firstly, soaking a semiconductor device welded by gold and tin in a cleaning solution at the temperature of 45 ℃ for 3 min;
the cleaning solution comprises a hydrocarbon cleaning agent, and the hydrocarbon cleaning agent comprises a cleaning agent with a structural formula of CnH2n+2The isomeric hydrocarbon compound of (a);
soaking the semiconductor device in a water tank filled with pure water, wherein the temperature of the pure water is 50 ℃, the soaking time is 3min, the water outlet flow speed of the pure water in the water tank is 3m/s, and the water inlet flow speed is 3 m/s;
thirdly, soaking the semiconductor device in 98% alcohol solution for 3 min;
and fourthly, putting the semiconductor device into an oven for heating, and removing the alcohol on the semiconductor device.
Example 4
Firstly, soaking a semiconductor device welded by gold and tin in a cleaning solution at the temperature of 60 ℃ for 1 min;
the cleaning solution comprises a hydrocarbon cleaning agent, and the hydrocarbon cleaning agent comprises a cleaning agent with a structural formula of CnH2nA cycloalkane compound of (a) and copper;
soaking the semiconductor device in a water tank filled with pure water, wherein the temperature of the pure water is 50 ℃, the soaking time is 2min, the water outlet flow speed of the pure water in the water tank is 4m/s, and the water inlet flow speed is 4 m/s;
thirdly, soaking the semiconductor device in 99% alcohol solution for 1 min;
and fourthly, putting the semiconductor device into an oven for heating, and removing the alcohol on the semiconductor device.
Example 5
Firstly, soaking a semiconductor device welded by gold and tin in a cleaning solution at the temperature of 60 ℃ for 1 min;
the cleaning solution comprises a semi-aqueous cleaning solution, and the semi-aqueous cleaning solution comprises tripropylene glycol butyl ether, diethylene glycol butyl ether, methoxy methyl butanol, tetrahydrofurfuryl alcohol, benzyl alcohol, N-methyl pyroli ketone, N-ethyl pyroli ketone and amine;
soaking the semiconductor device in a water tank filled with pure water, wherein the temperature of the pure water is 50 ℃, the soaking time is 2min, the water outlet flow speed of the pure water in the water tank is 5m/s, and the water inlet flow speed is 5 m/s;
thirdly, soaking the semiconductor device in 99% alcohol solution for 1 min;
and fourthly, putting the semiconductor device into an oven for heating, and removing the alcohol on the semiconductor device.
Example 6
Firstly, soaking a semiconductor device welded by gold and tin in a cleaning solution at the temperature of 60 ℃ for 1 min;
the cleaning solution comprises a semi-aqueous cleaning solution, ethanol and toluene isobutyl ketone, wherein the semi-aqueous cleaning solution comprises tripropylene glycol butyl ether, butyl diglycol, methoxy methyl butanol, tetrahydrofurfuryl alcohol, benzyl alcohol, N-methyl pyroli ketone, N-ethyl pyroli ketone, imide and inorganic alkali salt;
soaking the semiconductor device in a water tank filled with pure water, wherein the temperature of the pure water is 50 ℃, the soaking time is 2min, the water outlet flow speed of the pure water in the water tank is 5m/s, and the water inlet flow speed is 5 m/s;
thirdly, soaking the semiconductor device in 99% alcohol solution for 1 min;
and fourthly, putting the semiconductor device into an oven for heating, and removing the alcohol on the semiconductor device.
Example 7
Firstly, soaking a semiconductor device welded by gold and tin in a cleaning solution at the temperature of 60 ℃ for 1 min;
the cleaning solution comprises water-based cleaning solution and ethyl acetate, wherein 1 liter of the water-based cleaning solution comprises 40g of sodium metasilicate, 20g of sodium hydroxide, 30g of sodium carbonate, 40g of ethylene oxide propylene oxide copolymer, 5g of carboxymethyl cellulose, 1g of fluorine-containing surfactant, 1g of complexing agent, 1g of organic silicon defoaming agent and the balance of deionized water;
soaking the semiconductor device in a water tank filled with pure water, wherein the temperature of the pure water is 50 ℃, the soaking time is 3min, the water outlet flow speed of the pure water in the water tank is 2m/s, and the water inlet flow speed is 2 m/s;
thirdly, soaking the semiconductor device in 95% alcohol solution for 4 min;
and fourthly, putting the semiconductor device into an oven for heating, and removing the alcohol on the semiconductor device.
Comparative example 1
Firstly, soaking a semiconductor device welded by gold and tin in a cleaning solution at the temperature of 60 ℃ for 1 min;
the cleaning solution comprises a semi-aqueous cleaning solution, and the semi-aqueous cleaning solution comprises tripropylene glycol butyl ether, diethylene glycol butyl ether, methoxy methyl butanol, tetrahydrofurfuryl alcohol, benzyl alcohol, N-methyl pyroli ketone, N-ethyl pyroli ketone and amine;
soaking the semiconductor device in a water tank filled with pure water, wherein the temperature of the pure water is 50 ℃, the soaking time is 6min, the water outlet flow speed of the pure water in the water tank is 8m/s, and the water inlet flow speed is 8 m/s;
thirdly, soaking the semiconductor device in 99% alcohol solution for 4 min;
and fourthly, putting the semiconductor device into an oven for heating, and removing the alcohol on the semiconductor device.
Comparative example 2
Firstly, soaking a semiconductor device welded by gold and tin in a cleaning solution at the temperature of 60 ℃ for 1 min;
the cleaning solution comprises water-based cleaning solution and ethyl acetate, wherein 1 liter of the water-based cleaning solution comprises 40g of sodium metasilicate, 20g of sodium hydroxide, 30g of sodium carbonate, 40g of ethylene oxide propylene oxide copolymer, 5g of carboxymethyl cellulose, 1g of fluorine-containing surfactant, 1g of complexing agent, 1g of organic silicon defoaming agent and the balance of deionized water;
soaking the semiconductor device in a water tank filled with pure water for 1min, wherein the water outlet flow speed of the pure water in the water tank is 0.3m/s, and the water inlet flow speed is 0.3 m/s;
thirdly, soaking the semiconductor device in 75% alcohol solution for 1 min;
and fourthly, putting the semiconductor device into an oven for heating, and removing the alcohol on the semiconductor device.
Comparative example 3
Firstly, soaking a semiconductor device welded by gold and tin in a water tank filled with pure water for 4min, wherein the water outlet flow speed of the pure water in the water tank is 8m/s, and the water inlet flow speed is 8 m/s;
and secondly, putting the semiconductor device into an oven for heating, and removing the pure water on the semiconductor device.
The cleaned semiconductor devices of examples 1 to 7 and comparative examples 1 to 3 were subjected to tests of residue, water stain residue, and the like, and the results were as follows:
from the above results, it is understood that the same cleaning liquid has a problem of remaining cleaning liquid in a short soaking time and a low water flow rate, and a problem of cracking of the semiconductor device in a long soaking time and a high water flow rate; in addition, when the concentration of the soaked alcohol is too low and the soaking time is too short, or the semiconductor device is directly dried after being cleaned by pure water, the semiconductor device also has water stain residues; further, if the halogen removing solution is not added to the cleaning solution, halogen remains in the semiconductor device.
While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (10)
1. A cleaning method for a semiconductor device after gold-tin soldering is characterized by comprising the following steps:
soaking a semiconductor device subjected to gold-tin soldering in a cleaning solution, wherein the cleaning solution comprises at least one of a water-based cleaning solution, a semi-water-based cleaning solution and a hydrocarbon cleaning solution;
the water-based cleaning solution comprises sodium metasilicate, sodium hydroxide, sodium carbonate, ethylene oxide propylene oxide copolymer, carboxymethyl cellulose, a fluorine-containing surfactant, a complexing agent, an organic silicon defoaming agent and deionized water;
the semi-aqueous cleaning solution comprises tripropylene glycol butyl ether, diethylene glycol butyl ether, methoxy methyl butanol, tetrahydrofurfuryl alcohol, benzyl alcohol, N-methyl pyroli ketone, N-ethyl pyroli ketone and alkali, wherein the alkali is one or more of amine, imide or inorganic alkali salt, silicate or phosphate;
the hydrocarbon cleaning agent comprises a component with a structural formula of CnH2n+2Is an isomeric hydrocarbon of the formula CnH2n+2Normal hydrocarbon with structural formula CnH2nOne or more compounds of cyclane and aromatic hydrocarbon;
soaking the semiconductor device in a water tank filled with pure water, and removing the cleaning liquid on the semiconductor device;
thirdly, soaking the semiconductor device in alcohol solution to remove pure water on the semiconductor device;
fourthly, heating the semiconductor device and removing the alcohol on the semiconductor device.
2. The method for cleaning the semiconductor device after gold-tin soldering according to claim 1, wherein in the step (one), 1 liter of the water-based cleaning solution comprises 30-80 g of sodium metasilicate, 10-30 g of sodium hydroxide, 20-50 g of sodium carbonate, 30-80 g of ethylene oxide-propylene oxide copolymer, 3-10 g of carboxymethyl cellulose, 0-2 g of a fluorine-containing surfactant, 0-5 g of a complexing agent, 0-5 g of a silicone defoaming agent and the balance of deionized water.
3. The method for cleaning a semiconductor device after gold-tin soldering as claimed in claim 2, wherein in the step (one), the fluorine-containing surfactant is one or more of sodium perfluorooctanoate, potassium perfluorooctanoate and perfluorooctanoic acid;
the complexing agent is one or more of sodium citrate, EDTA (ethylene diamine tetraacetic acid) disodium and EDTA tetrasodium.
4. The method for cleaning a semiconductor device after gold-tin soldering according to any one of claims 1 to 3, wherein in the step (I), the cleaning solution further comprises an auxiliary agent, the auxiliary agent comprises at least one of a ketone substance, an alcohol substance and an ester substance, wherein the ketone substance comprises at least one of acetone and toluene isobutyl ketone; the alcohol substance comprises at least one of ethanol, propanol and butanol; the ester substance comprises at least one of ethyl acetate and butyl acetate.
5. The method for cleaning a semiconductor device after gold-tin soldering as claimed in claim 1, wherein in the step (one), the hydrocarbon cleaning agent further comprises copper and phosphorus.
6. The method for cleaning the semiconductor device after gold-tin soldering as claimed in claim 1, wherein in the step (I), the temperature of the cleaning solution is 50 ± 10 ℃, and the soaking time is 1-5 min.
7. The method for cleaning the semiconductor device after gold-tin soldering according to claim 1, wherein in step (two), the bottom of the water tank is provided with a water inlet and a water outlet, the water inlet and the water outlet are connected through a pipe, the pipe is provided with a circulating pump and a filter screen, the circulating pump pumps pure water in the water tank out of the water outlet, and the pumped pure water enters the water tank through the pipe from the water inlet, so that the pure water in the water tank is circulated.
8. The method for cleaning the semiconductor device after gold-tin soldering of claim 7, wherein the semiconductor device is immersed in the water tank for at least two water circulation cleaning times, and the time for each circulation cleaning is 1-3 min;
the flow rate of the outlet water of the pure water in the water tank is 0.5-6 m/s, and the flow rate of the inlet water is 0.5-5 m/s.
9. The method for cleaning a semiconductor device after gold-tin soldering according to claim 1, wherein in the step (two), the conductivity of the pure water is less than or equal to 2 μ s/cm, and the temperature is 50 +/-10 ℃.
10. The method for cleaning the semiconductor device after gold-tin soldering as claimed in claim 1, wherein in the step (three), the semiconductor device is soaked in the alcohol for 1-5 min.
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Application publication date: 20201009 |