CN111725111A - Reaction chamber of semiconductor processing equipment and semiconductor processing equipment - Google Patents
Reaction chamber of semiconductor processing equipment and semiconductor processing equipment Download PDFInfo
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- CN111725111A CN111725111A CN202010594477.2A CN202010594477A CN111725111A CN 111725111 A CN111725111 A CN 111725111A CN 202010594477 A CN202010594477 A CN 202010594477A CN 111725111 A CN111725111 A CN 111725111A
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- housing
- shell
- reaction chamber
- sealing
- sealing ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a reaction chamber of semiconductor process equipment and the semiconductor process equipment, wherein the reaction chamber is provided with a base for bearing a wafer and comprises a chamber body, an upper electrode and a driving mechanism; the upper electrode comprises a dielectric window and an electrode shell, the electrode shell comprises a first shell and a second shell, the first shell is connected with the cavity body, the first shell is sleeved on the second shell, and the second shell can move relative to the first shell; the driving mechanism is arranged on the first shell, is connected with the second shell and is used for driving the second shell to be far away from or close to the base; the dielectric window is arranged in the second shell and can be far away from or close to the base along with the second shell. The scheme can solve the problem that the processing efficiency of the semiconductor processing equipment is poor due to the fact that the time spent by the semiconductor processing equipment for adjusting the GAP value of the cavity is long.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a reaction chamber of semiconductor process equipment and the semiconductor process equipment.
Background
Semiconductor etching equipment (etcher) is an important semiconductor processing equipment in the semiconductor manufacturing process. In the related art, the distance from the bottom surface of the dielectric window (or the bottom surface of the air inlet nozzle) of the etcher to the upper surface of the wafer is a GAP value of a chamber, and in different processing technologies, the GAP value of the chamber is different greatly, so that the etcher needs to replace different adjusting brackets to adjust the distance from the bottom surface of the dielectric window (or the bottom surface of the air inlet nozzle) to the upper surface of the wafer, and thus the GAP value of the chamber suitable for different technologies can be met.
When the GAP value of the cavity is adjusted, the cavity needs to be opened, and then the adjusting bracket needs to be replaced, however, the reaction cavity of the semiconductor process equipment is in a vacuum condition, so that the cavity needs to be opened after the reaction cavity of the semiconductor process equipment is processed, and therefore the replacing step of the adjusting bracket is complex, the time spent by the semiconductor process equipment for adjusting the GAP value of the cavity is long, and the processing efficiency of the semiconductor process equipment is affected.
Disclosure of Invention
The invention discloses a reaction chamber of semiconductor processing equipment and the semiconductor processing equipment, which aim to solve the problem that the processing efficiency of the semiconductor processing equipment is poor due to the fact that the time spent by the semiconductor processing equipment for adjusting a GAP value of the chamber is long.
In order to solve the problems, the invention adopts the following technical scheme:
a reaction chamber of semiconductor process equipment is provided with a base for bearing a wafer, and comprises a chamber body, an upper electrode and a driving mechanism;
the upper electrode comprises a dielectric window and an electrode shell, the electrode shell comprises a first shell and a second shell, the first shell is connected with the cavity body, the first shell is sleeved on the second shell, and the second shell can move relative to the first shell;
the driving mechanism is arranged on the first shell, is connected with the second shell and is used for driving the second shell to be far away from or close to the base;
the dielectric window is arranged in the second shell, and the dielectric window can be far away from or close to the base along with the second shell.
A semiconductor processing device comprises the reaction chamber.
The technical scheme adopted by the invention can achieve the following beneficial effects:
in the reaction chamber of the semiconductor process equipment disclosed by the invention, the driving mechanism is arranged on the first shell and is connected with the second shell, the driving mechanism can drive the second shell to be far away from or close to the base, and the dielectric window is arranged in the second shell, so that the dielectric window can be far away from or close to the base along with the second shell, and further, the distance from the bottom surface of the dielectric window to the upper surface of the wafer can be adjusted, and the GAP value of the chamber can be adjusted. In the scheme, the electrode shell is of a two-layer structure, and the two-layer structure can move relatively, so that the reaction chamber can adjust the GAP value of the chamber without opening the chamber, the GAP value of the chamber can be conveniently adjusted when the processing technology of the semiconductor processing equipment is replaced, the time spent is short, and the processing efficiency of the semiconductor processing equipment is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a cross-sectional view of a reaction chamber disclosed in an embodiment of the present invention;
FIG. 2 is a top view of a reaction chamber disclosed in an embodiment of the present invention;
FIG. 3 is a schematic view of a portion of a reaction chamber disclosed in an embodiment of the present invention;
FIGS. 4 to 6 are sectional views of partial structures of a reaction chamber disclosed in an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a second housing of the reaction chamber according to the disclosure of the present invention;
fig. 8 is a partial sectional view of a second housing in a reaction chamber according to an embodiment of the present invention.
Description of reference numerals:
100-chamber body,
200-upper electrode, 210-electrode housing, 211-first housing, 2111-chamfer, 212-second housing, 2121-first seal groove, 2122-bearing table, 220-dielectric window, 230-gas inlet nozzle, 240-upper electrode coil, 250-adapter, 260-top cover,
300-wafer,
400-base, a,
510-first seal ring, 520-second seal ring, 530-third seal ring,
600-a limit groove,
700-drive mechanism, 710-drive source, 720-transmission member,
800-distance sensor.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1 to 8, the embodiment of the present invention discloses a reaction chamber of semiconductor processing equipment, and the disclosed reaction chamber may specifically include a chamber body 100, an upper electrode 200, a driving mechanism 700, and a susceptor 400.
The chamber body 100 and the upper electrode 200 form a reaction chamber, the susceptor 400 is disposed in the reaction chamber, and the susceptor 400 is used to support a wafer, optionally, the susceptor 400 may include an electrostatic chuck for adsorbing the wafer 300 and a lower electrode for providing an adsorption voltage for adsorbing the wafer 300 for the electrostatic chuck, and the wafer 300 is etched in the reaction chamber.
The upper electrode 200 includes a dielectric window 220, an electrode case 210, an air inlet nozzle 230, a top plate 260, an upper electrode coil 240, and an adapter 250. The electrode housing 210 includes a first housing 211 and a second housing 212, the first housing 211 is connected to the chamber body 100, the first housing 211 is nested in the second housing 212, and the second housing 212 is movable with respect to the first housing 211. The top plate 260 and the second case 212 form an installation space, the dielectric window 220, the upper electrode coil 240, and other components are located in the installation space, the matching unit 250 is installed on the top plate 260, and the matching unit 250 and the upper electrode coil 240 are respectively disposed on both sides of the top plate 260. The gas inlet nozzle 230 is disposed on the dielectric window 220, the gas inlet nozzle 230 is communicated with the reaction chamber, and the reaction gas is introduced into the reaction chamber through the gas inlet nozzle 230. The matcher 250 applies a radio frequency voltage to the upper electrode coil 240 so that the upper electrode coil 240 can generate an ionization electric field, thereby ionizing the reaction gas within the reaction chamber.
The driving mechanism 700 is disposed on the first housing 211, and the driving mechanism 700 is connected to the second housing 212, and the driving mechanism 700 is configured to drive the second housing 212 to move in a direction away from or close to the base 400, so as to drive the second housing 212 to move away from or close to the base 400. The dielectric window 220 is disposed in the second housing 212, and the dielectric window 220 can move with the second housing 212 in a direction away from or close to the base 400, so that the dielectric window 220 can move with the second housing 212 away from or close to the base 400.
Alternatively, the driving mechanism 700 may drive the second housing 212 to move in various ways, for example, the driving mechanism 700 may be a servo electrode, and a servo motor is connected to the second housing 212, and the servo motor drives the second housing 212 to move. Of course, the type of the motor may also be a stepping motor, a dc brushless electrode, etc., which is not limited in this embodiment of the present invention. The driving mechanism 700 may be disposed outside the reaction chamber or disposed inside the reaction chamber. When the driving mechanism 700 is disposed in the reaction chamber, the driving mechanism 700 easily interferes with other components in the reaction chamber, and for this reason, the driving mechanism 700 may be disposed outside the reaction chamber.
In a specific operation process, when the driving mechanism 700 drives the second housing 212 to approach the susceptor 400, since the susceptor 400 is fixed in the reaction chamber and the wafer 300 is carried on the susceptor 400, the distance between the susceptor 400 and the dielectric window 220 is reduced, and the distance from the bottom surface of the dielectric window 220 (or the bottom surface of the inlet nozzle 230) to the upper surface of the wafer 300 is also reduced, so that the GAP value of the chamber is reduced; when the driving mechanism 700 drives the second housing 212 away from the susceptor 400, the distance from the bottom surface of the dielectric window 220 (or the bottom surface of the inlet nozzle 230) to the upper surface of the wafer 300 increases, thereby increasing the GAP value of the chamber.
In the embodiment of the invention, the electrode shell 210 has a two-layer structure, and the two-layer structure can move relatively, so that the reaction chamber can adjust the GAP value of the chamber without opening the chamber, and further, when the semiconductor processing equipment is used for replacing the processing technology, the GAP value of the chamber can be adjusted conveniently, the time spent on the adjustment is short, and the processing efficiency of the semiconductor processing equipment is improved.
In addition, the embodiment can realize the stepless adjustment of the second shell 212, so that the stepless adjustment of the cavity GAP value can be realized, the precision of the cavity GAP value is higher, and the process of the semiconductor process equipment can achieve better effect.
A lining is disposed in the reaction chamber and connected to the second housing 212, and the lining is used for protecting the sidewall of the chamber body 100. Since the second housing 212 is connected to the inner liner, the inner liner can be made to have a telescopic structure.
In order to improve the sealing performance between the first housing 211 and the second housing 212, in an alternative embodiment, the upper electrode 200 may further include a first sealing ring 510, a sidewall of the second housing 212 may be formed with a first sealing groove 2121, the first sealing ring 510 may be located in the first sealing groove 2121, and the first housing 211 and the second housing 212 may be in sealing engagement with each other through the first sealing ring 510. At this time, the first sealing ring 510 can seal the gap between the inner sidewall of the first housing 211 and the outer sidewall of the second housing 212, so that the sealing performance between the first housing 211 and the second housing 212 can be improved, and further, the vacuum environment in the reaction chamber is prevented from being damaged, and further, the safety of the reaction chamber is improved.
In the above embodiment, when only one first seal 510 is provided to seal the first housing 211 and the second housing 212, if the second housing 212 moves a long distance, the first seal 510 easily slips out of the gap between the first housing 211 and the second housing 212, and the sealed fit between the first housing 211 and the second housing 212 is broken. For this reason, in an alternative embodiment, the number of the first sealing rings 510 may be multiple, the number of the first sealing grooves 2121 may be multiple, and the multiple first sealing rings 510 and the multiple first sealing grooves 2121 may correspond to each other one by one. In this embodiment, the number of the first sealing rings 510 is large, and even if a part of the first sealing rings 510 is located outside the gap between the first housing 211 and the second housing 212, a part of the first sealing rings 510 can still seal the gap between the first housing 211 and the second housing 212, thereby preventing the sealing fit between the first housing 211 and the second housing 212 from being easily broken, and further improving the sealing performance of the reaction chamber.
Alternatively, a plurality of first seal grooves 2121 may be cut at different heights on the outer sidewall of the second housing 212, and the number of the first seal grooves 2121 may be selected according to actual working conditions, which is not limited herein. The first sealing ring 510 may be made of sealing rubber, sealing silica gel, or the like.
In the above embodiment, when the driving mechanism 700 drives the second housing 212 to move in the direction close to the base 400, at this time, the first sealing ring 510 located outside the gap between the first housing 211 and the second housing 212 needs to enter the gap between the first housing 211 and the second housing 212 again, however, the inner edge of the second housing 212 is liable to catch the first sealing ring 510, which makes it difficult for the first sealing ring 510 to enter the gap between the first housing 211 and the second housing 212. To this end, in another alternative embodiment, the end of the first housing 211 facing away from the chamber body 100, and the inner edge of the first housing 211 near the second housing 212 may be provided with a chamfer 2111. In this embodiment, the chamfer 2111 is smooth, so that the first seal ring 510 can smoothly enter the gap between the first housing 211 and the second housing 212, thereby improving the reliability of the reaction chamber. Optionally, the surface of the chamfer 2111 contacting the first seal ring 510 may be a plane or a circular arc, which is not limited herein.
In the above embodiment, the seal between the first housing 211 and the second housing 212 is dynamic seal, so that the first seal ring 510 is easily dislocated in the process of moving along with the second housing 212, and the sealing performance between the first housing 211 and the second housing 212 is further affected.
For this reason, a specific structure of the first sealing groove 2121 is disclosed herein, but other structures may also be adopted, and the present disclosure is not limited thereto. Specifically, the cross-sectional area of first seal groove 2121 gradually decreases in a groove opening direction from the groove bottom of first seal groove 2121 to first seal groove 2121. At this time, the first seal groove 2121 is a dovetail groove, the width of the notch of the first seal groove 2121 is small, the width of the groove bottom is large, and the first seal groove 2121 can clamp the first seal ring 510, so that the first seal ring 510 can be effectively prevented from being dislocated in the moving process, and the sealing performance between the first housing 211 and the second housing 212 can be further improved.
Of course, the first sealing groove 2121 may have other structures, which is not limited herein.
Further, the reaction chamber may further include a second sealing ring 520, a second sealing groove may be formed on an end surface of the chamber body 100 contacting the first housing 211, the second sealing ring 520 is located in the second sealing groove, and the first housing 211 may be in sealing fit with the chamber body 100 through the second sealing ring 520. In this scheme, the second sealing ring 520 can seal the gap at the joint of the first housing 211 and the chamber body 100, so that the sealing performance between the first housing 211 and the chamber body 100 can be improved, and further, the vacuum environment in the reaction chamber is prevented from being damaged, and further, the safety of the reaction chamber is improved.
Optionally, the second seal groove may be a dovetail groove, but may also be of other structures, which is not limited herein. The second sealing ring 520 may be made of sealing rubber, sealing silica gel, or the like.
In the above embodiment, the reaction gas in the reaction chamber enters the upper electrode 200, which may easily cause damage to components in the upper electrode 200, for this reason, in an optional embodiment, the upper electrode 200 may further include a third sealing ring 530, the bottom end of the second housing 212 may be provided with a susceptor 2122 for carrying the dielectric window 220, a top surface of the susceptor 2122 may be provided with a third sealing groove, the third sealing ring 530 may be located in the third sealing groove, and the second housing 212 and the dielectric window 220 may be in sealing fit via the third sealing ring 530. At this time, the third sealing ring 530 may seal a gap at a connection portion between the second housing 212 and the dielectric window 220, so that the sealing performance between the second housing 212 and the dielectric window 220 may be improved, thereby preventing the reaction gas from entering the upper electrode 200, and further improving the safety of the reaction chamber. Optionally, the third seal groove may be a dovetail groove, but may also be of other structures, which is not limited herein. The third sealing ring 530 may be made of sealing rubber, sealing silica gel, or the like.
The present invention discloses a specific structure of the driving mechanism 700, but other structures can be adopted, and the present invention is not limited herein. The driving mechanism 700 may include a driving source 710 and a transmission member 720, the driving source 710 may be disposed on the first housing 211, one end of the transmission member 720 is connected to a driving shaft of the driving source 710, the other end of the transmission member 720 is connected to the second housing 212, the driving source 710 may drive the transmission member 720 to move, and the transmission member 720 drives the second housing 212 to move away from or close to the base 400. In this embodiment, the second housing 212 is connected to the driving source 710 through the transmission member 720, so that the driving source 710 can be flexibly disposed, the axial direction of the driving shaft of the driving source 710 and the moving direction of the second housing 212 can be set to be the same, and the second housing 212 is not easily deflected during moving. In addition, such a driving mechanism 700 is simple and easy to operate. Alternatively, the driving source 710 may be a driving motor, a cylinder, or the like, and the transmission member 720 may be a connecting rod, a gear, a rack, a belt, or the like.
In another alternative embodiment, the transmission member 720 and the second housing 212 may be connected by a screw thread, and at this time, the transmission member 720 can be detached from the second housing 212, so that the transmission member 720 or the second housing 212 can be repaired or replaced, thereby improving the maintainability of the reaction chamber.
In an alternative embodiment, the second housing 212 may be formed with a limiting groove 600, and a portion of the transmission member 720 is located in the limiting groove 600. At this moment, driving medium 720 and spacing groove 600 are spacing to be cooperated, and spacing groove 600 can play the effect of installation location, can also prevent that driving medium 720 from taking place to deflect at the in-process that removes simultaneously.
Since there are many components mounted on the second housing 212, the second housing 212 has a large weight, and when only one driving mechanism 700 is used to drive the second housing 212, the driving force of the driving mechanism 700 is small, and thus the moving speed of the second housing 212 is slow. To this end, in an alternative embodiment, the number of the driving mechanisms 700 may be plural, and a plurality of the driving mechanisms 700 may be provided at intervals around the second housing 212. In this embodiment, the driving mechanisms 700 are more in number, so that a larger driving force can be provided, the moving speed of the second housing 212 is faster, the time for adjusting the GAP value of the chamber is further shortened, and the processing efficiency of the semiconductor processing equipment is further improved.
In the above embodiment, since the weight distribution of the second housing 212 is not uniform, the position driving mechanism 700 with the larger weight of the second housing 212 can be arranged more compactly, and the position driving mechanism 700 with the smaller weight of the second housing 212 can be arranged relatively dispersedly, so that the driving force applied to the second housing 212 is more uniform, and the first housing 211 and the second housing 212 can be prevented from being jammed.
In order to prevent the first housing 211 and the second housing 212 from being jammed, a good concentricity between the first housing 211 and the second housing 212 is required, so as to prevent the second housing 212 from being jammed in the first housing 211.
Alternatively, the number of the driving mechanisms 700 may be three, and of course, other numbers may be provided, which is not limited herein.
It should be noted that when a plurality of driving mechanisms 700 simultaneously drive the second housing 212, and one of the driving mechanisms 700 fails to operate, the remaining driving mechanisms 700 must also stop operating, thereby preventing damage to the semiconductor processing equipment.
In order to control the GAP value of the chamber more precisely, in an alternative embodiment, a distance sensor 800 may be disposed on at least one of the first housing 211 and the second housing 212, and the distance sensor 800 is used for measuring the moving distance of the second housing 212. In the scheme, the distance sensor 800 can measure the moving distance of the second shell 212 relative to the first shell 211, the chamber GAP value can be obtained through feedback of the moving distance of the second shell 212, further programming control of the chamber GAP value can be achieved, and the chamber GAP value can be automatically adjusted according to different process types, so that semiconductor process equipment can change different processing processes more conveniently and intelligently, and further the use performance of the semiconductor process equipment is improved.
Based on the reaction chamber of the semiconductor process equipment according to any of the embodiments of the present invention, an embodiment of the present invention may further include a semiconductor process equipment, and the disclosed semiconductor process equipment has the reaction chamber of the semiconductor process equipment according to any of the embodiments of the present invention. The semiconductor processing equipment may be an etcher or other wafer processing equipment, which is not limited herein.
In the above embodiments of the present invention, the difference between the embodiments is mainly described, and different optimization features between the embodiments can be combined to form a better embodiment as long as they are not contradictory, and further description is omitted here in view of brevity of the text.
The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (10)
1. A reaction chamber of semiconductor processing equipment, wherein a pedestal (400) for bearing a wafer is arranged in the reaction chamber, and the reaction chamber is characterized by comprising a chamber body (100), an upper electrode (200) and a driving mechanism (700);
the upper electrode (200) comprises a dielectric window (220) and an electrode shell (210), the electrode shell (210) comprises a first shell (211) and a second shell (212), the first shell (211) is connected with the chamber body (100), the first shell (211) is sleeved on the second shell (212), and the second shell can move relative to the first shell (211);
the driving mechanism (700) is arranged on the first shell (211), is connected with the second shell (212) and is used for driving the second shell (212) to be far away from or close to the base (400);
the dielectric window (220) is arranged in the second shell (212), and the dielectric window (220) can move away from or close to the base (400) along with the second shell (212).
2. The reaction chamber of claim 1, wherein the upper electrode (200) further comprises a first sealing ring (510), a first sealing groove (2121) is formed in a sidewall of the second housing (212), the first sealing ring (510) is located in the first sealing groove (2121), and the first housing (211) and the second housing (212) are in sealing engagement with each other through the first sealing ring (510).
3. The reaction chamber of claim 2, wherein the number of the first sealing rings (510) is plural, the number of the first sealing grooves (2121) is plural, and the plural first sealing rings (510) correspond to the plural first sealing grooves (2121) one by one.
4. The reaction chamber according to claim 3, wherein an end of the first housing (211) facing away from the chamber body (100) is provided with a chamfer (2111) near an inner edge of the second housing (212).
5. The reaction chamber of claim 1, further comprising a second sealing ring (520), wherein a second sealing groove is formed on an end surface of the chamber body (100) contacting the first housing (211), the second sealing ring (520) is located in the second sealing groove, and the first housing (211) is in sealing fit with the chamber body (100) through the second sealing ring (520).
6. The reaction chamber of claim 1, wherein the upper electrode (200) further comprises a third sealing ring (530), a susceptor (2122) for bearing the dielectric window (220) is disposed at a bottom end of the second housing (212), a third sealing groove is disposed on a top surface of the susceptor (2122), the third sealing ring (530) is located in the third sealing groove, and the second housing (212) and the dielectric window (220) are in sealing engagement with each other via the third sealing ring (530).
7. The reaction chamber of claim 1, wherein the driving mechanism (700) comprises a driving source (710) and a transmission member (720), the driving source (710) is disposed on the first housing (211), one end of the transmission member (720) is connected to a driving shaft of the driving source (710), and the other end of the transmission member (720) is connected to the second housing (212), and the driving source (710) drives the transmission member (720) to move the second housing (212) away from or close to the pedestal (400).
8. The reaction chamber of claim 1, wherein the number of the driving mechanisms (700) is plural, and the plural driving mechanisms (700) are arranged at intervals around the second housing (212).
9. The reaction chamber of claim 1, wherein a distance sensor (800) is disposed on at least one of the first housing (211) and the second housing (212), the distance sensor (800) being configured to measure a moving distance of the second housing (212).
10. A semiconductor processing apparatus comprising the reaction chamber of any one of claims 1 to 9.
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