CN111710734B - 一种氧化镓光电探测器及其制备方法 - Google Patents
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 79
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910021389 graphene Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 5
- 230000004044 response Effects 0.000 abstract description 9
- 238000001514 detection method Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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Abstract
本公开提供了一种氧化镓光电探测器,包括:衬底(100);下电极(200),设于所述衬底(100)表面;氧化镓层(300),设于所述下电极(200)的表面,所述氧化镓层(300)的顶面设有多个沟槽;上电极(400),覆盖所述氧化镓层(300)的顶面以及沟槽的底面和侧面。另一方面本公开还提供了一种氧化镓光电探测器的制备方法。本申请的氧化镓光电探测制备工艺简单,同时实现高的响应度和快的响应速度。
Description
技术领域
本公开涉及光电探测技术领域,尤其涉及一种氧化镓光电探测器及其制备方法。
背景技术
光电探测器是一类能将光信号转化为电信号从而实现对光的探测的光电子器件。日盲波段是指波长范围在200~280nm的紫外光。由于大气臭氧层的强烈吸收,太阳光中的这部分不能到达地表,因此日盲探测具有背景干扰小的突出优点,在空间天文望远镜、导弹预警、非视距保密光通信、海上破雾导航、电网监测、火灾遥感及生化监测等方面具有广阔的应用前景。根据机理的不同,光电探测器可以分为两种,也即外光电效应探测器以及内光电效应探测器。外光电效应探测器依靠电子吸收光子后从材料表面逸出的外光电效应,主要包括光电倍增管、像增强器等。这类器件存在一般需要高真空、体积大等缺点,还比较脆弱。内光电效应探测器则依靠电子吸收光子后从价带跃迁到导带的内光电效应。内光电效应又可以分为两种:光电导效应和光伏效应。光电导效应是指材料吸收光子后发生电子跃迁,从而使得自由载流子浓度上升,电阻率下降。光伏效应则指光照下产生的自由载流子在器件内建电场的作用下分别被运输到器件两端,从而导致器件两端电压下降。内光电效应探测器则具有可小型化、不需要真空等突出优点。目前用于内光电效应日盲探测的材料主要有Si、GaAs、GaP、GaN、SiC、ZnO、金刚石以及氧化镓等。与其他材料相比,氧化镓具有显著的优势,氧化镓是直接带隙半导体,其禁带宽度高达4.9电子伏,直接对应了日盲波段,不会被波长长于日盲波段的光干扰。此外,超宽的禁带宽度使得氧化镓的击穿场强度高、耐高温、抗辐照性能好,对极端环境和工作条件的耐受性更好。此外,氧化镓可以通过导模法制备并实现可控的n型掺杂,生产成本更低。氧化镓是理想的日盲探测材料,目前报道的基于氧化镓的日盲光电探测器所采用的结构主要有:光电导结构、MSM(金属-半导体-金属)结构和肖特基结构等。其中肖特基结构的制作工艺复杂,导致制作成本较高。
MSM和光电导结构虽然制作工艺简单,但暗电流较大,响应速度较慢。此外,这些器件很难同时具备高的响应度和快的响应速度,一个参数的提升通常会带来另一个参数的下降,而这两个参数对于制备高性能、可实用化的光电探测器来说都是非常重要的。因此,有必要设计一种新型氧化镓日盲光电探测器,以简化制备工艺,同时实现高的响应度和快的响应速度。
发明内容
(一)要解决的技术问题
本公开提供了一种氧化镓光电探测器及其制备方法,至少解决以上技术问题。
(二)技术方案
本公开提供了一种氧化镓光电探测器,包括:衬底100;下电极200,设于衬底100表面;氧化镓层300,设于下电极200的表面,氧化镓层300的顶面设有多个沟槽;上电极400,覆盖氧化镓层300的顶面以及沟槽的底面和侧面。
在进一步的实施例中,下电极200的材料为Ti、Cr、Ni、Pt、Au、Ag、W、In、Al、Ru、Pd、TiN、Ta、TaN、ITO或石墨烯中的一种或多种。
在进一步的实施例中,氧化镓层300的厚度为10~1000nm。
在进一步的实施例中,沟槽的截面形状为圆形、圆环形、长方形、三角形或多边形中的一种或多种。
在进一步的实施例中,上电极400的材料为Ti、Cr、Ni、Pt、Au、Ag、W、In、Al、Ru、Pd、TiN、Ta、TaN、ITO或石墨烯中的一种或多种。
在进一步的实施例中,上电极400的厚度小于或等于30nm。
本公开另一方面提供了一种氧化镓光电探测器的制备方法,包括:S1,在衬底100上沉积下电极200;S2,在下电极200上沉积氧化镓层300;S3,在氧化镓层300上光刻并刻蚀形成沟槽;S4,在氧化镓层300的顶面以及沟槽的表面沉积上电极400。
在进一步的实施例中,氧化镓层300的厚度为10~1000nm。
在进一步的实施例中,上电极400的厚度小于或等于30nm。
(三)有益效果
本公开提供了一种氧化镓光电探测器及其制备方法,至少具有如下有益效果:
氧化镓上的沟槽结构增加了其表面粗糙度,减少了入射光的镜面反射,增强了氧化镓对入射光的吸收,从而提高了器件的量子效率和响应度;
沟槽底部上电极和下电极间的距离很短,使得两电极间的电场强度升高,同时载流子在氧化镓中运动的距离更短,使得载流子在氧化镓中迁移所需的时间减短,器件的响应速度加快、响应度上升;
电场强度在曲率大的地方加强,沟槽结构中大量存在的尖角可以进一步提高电极间电场强度,进而提高响应度和响应速度;
纳米厚度的上电极完全覆盖氧化镓,最大限度地收集光生载流子,同时不会对氧化镓的光吸收产生太大影响。
附图说明
图1示意性示出了根据本公开实施例的氧化镓光电探测器的结构图;
图2示意性示出了根据本公开实施例的氧化镓光电探测器的制备方法步骤图。
具体实施方式
本申请通过在氧化镓层上制备沟槽结构,可以减少光在薄膜表面的镜面反射,增加氧化镓对入射光的吸收;同时上下电极间的距离减小,使得载流子的运动距离减少,电极间的电场强度上升;结构中大量的尖角使电场强度进一步增强,可以提升器件的响应速度,增加器件的响应度;使用纳米厚度的金属充当上电极,在均匀覆盖整个氧化镓表面的同时不影响氧化镓的光吸收,提高器件性能。
本申请中的一种氧化镓光电探测器,如图1所示,包括衬底100、下电极200、氧化镓层300以及上电极400,其中:下电极200,设于衬底100表面;氧化镓层300,设于下电极200的表面,氧化镓层300的顶面设有多个沟槽;上电极400,覆盖氧化镓层300的顶面以及沟槽的底面和侧面。
为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明进一步详细说明。
衬底100为绝缘衬底,在使用之前可以对其进行清洗或打磨等预处理。
下电极200可以通过沉积的方式设于衬底100上,下电极200的材料优选为Ti、Cr、Ni、Pt、Au、Ag、W、In、Al、Ru、Pd、TiN、Ta、TaN、ITO或石墨烯中的一种或多种。
氧化镓层300可以通过沉积的方式设于下电极200的表面,氧化镓层300的厚度优选为10~1000nm。该氧化镓层300的顶面设有多个沟槽,该多个沟槽的形状可以相同也可以不相同,可以为规则或不规则结构,其截面截面形状可以为圆形、圆环形、长方形、三角形、多边形等中的一种或多种。
上电极400均匀覆盖氧化镓层300的顶面以及沟槽的底面和侧面。上电极400的材料可以为Ti、Cr、Ni、Pt、Au、Ag、W、In、Al、Ru、Pd、TiN、Ta、TaN、ITO或石墨烯中的一种或多种。上电极400的厚度优选为小于或等于30nm。
本公开另一方面提供了一种氧化镓光电探测器的制备方法,如图2所示,包括:
S1,在衬底100上沉积下电极200;
该衬底100为绝缘衬底。使用之前可以对其进行清洗或打磨等预处理。下电极200的材料优选为Ti、Cr、Ni、Pt、Au、Ag、W、In、Al、Ru、Pd、TiN、Ta、TaN、ITO或石墨烯中的一种或多种。
S2,在下电极200上沉积氧化镓层300;
氧化镓层300的厚度优选为10~1000nm。
S3,在氧化镓层300上光刻并刻蚀形成沟槽;
该多个沟槽的形状可以相同也可以不相同,可以为规则或不规则结构,其截面形状可以为圆形、圆环形、长方形、三角形、多边形等中的一种或多种。沟槽的深度小于氧化镓层300的厚度。
刻蚀步骤之后可以通过高温退火、溶液浸泡等方式对刻蚀损伤进行修复。
S4,在氧化镓层300的顶面以及沟槽的表面沉积上电极400。
可以采用ALD等方法沉积上电极400,使上电极400均匀覆盖氧化镓层300的顶面以及沟槽的底面和侧面。上电极400的材料可以为Ti、Cr、Ni、Pt、Au、Ag、W、In、Al、Ru、Pd、TiN、Ta、TaN、ITO或石墨烯中的一种或多种。上电极400的厚度优选为小于或等于30nm。
综上所述,本申请中的氧化镓光电探测器,由于氧化镓上的沟槽结构增加了其表面粗糙度,减少了入射光的镜面反射,增强了氧化镓对入射光的吸收,从而提高了器件的量子效率和响应度;沟槽底部上电极和下电极间的距离很短,使得两电极间的电场强度升高,同时载流子在氧化镓中运动的距离更短,使得载流子在氧化镓中迁移所需的时间减短,器件的响应速度加快、响应度上升;电场强度在曲率大的地方加强,沟槽结构中大量存在的尖角可以进一步提高电极间电场强度,进而提高响应度和响应速度;纳米厚度的上电极完全覆盖氧化镓,最大限度地收集光生载流子,同时不会对氧化镓的光吸收产生太大影响。
以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (7)
1.一种氧化镓光电探测器,包括:
衬底(100);
下电极(200),设于所述衬底(100)表面;
氧化镓层(300),设于所述下电极(200)的表面,所述氧化镓层(300)的厚度为10~1000nm,所述氧化镓层(300)的顶面设有多个沟槽,所述多个沟槽的形状相同或不相同;
上电极(400),覆盖所述氧化镓层(300)的顶面以及沟槽的底面和侧面,沟槽底部的所述上电极和所述下电极的间距为短间距,以使所述沟槽底部的所述上电极和所述下电极高于上方没有所述沟槽的所述上电极和所述下电极间的电场强度。
2.根据权利要求1所述的氧化镓光电探测器,所述下电极(200)的材料为Ti、Cr、Ni、Pt、Au、Ag、W、In、A1、Ru、Pd、TiN、Ta、TaN、ITO或石墨烯中的一种或多种。
3.根据权利要求1所述的氧化镓光电探测器,所述沟槽的截面形状为圆形、圆环形、长方形、三角形或多边形中的一种或多种。
4.根据权利要求1所述的氧化镓光电探测器,所述上电极(400)的材料为Ti、Cr、Ni、Pt、Au、Ag、W、In、A1、Ru、Pd、TiN、Ta、TaN、ITO或石墨烯中的一种或多种。
5.根据权利要求1或4所述的氧化镓光电探测器,所述上电极(400)的厚度小于或等于30nm。
6.一种氧化镓光电探测器的制备方法,包括:
S1,在衬底(100)上沉积下电极(200);
S2,在所述下电极(200)上沉积氧化镓层(300),所述氧化镓层(300)的厚度为10~1000nm;
S3,在所述氧化镓层(300)上刻蚀形成多个沟槽,所述多个沟槽的形状相同或不相同;
S4,在所述氧化镓层(300)的顶面以及沟槽的表面沉积上电极(400),沟槽底部的所述上电极和所述下电极的间距为短间距,以使所述沟槽底部的所述上电极和所述下电极高于上方没有所述沟槽的所述上电极和所述下电极间的电场强度。
7.根据权利要求6所述的氧化镓光电探测器的制备方法,所述上电极(400)的厚度小于或等于30nm。
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