CN111708457B - Self-capacitance data processing method and device - Google Patents
Self-capacitance data processing method and device Download PDFInfo
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- 238000012216 screening Methods 0.000 claims description 10
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/04166—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving
- G06F3/041662—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving using alternate mutual and self-capacitive scanning
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0448—Details of the electrode shape, e.g. for enhancing the detection of touches, for generating specific electric field shapes, for enhancing display quality
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Abstract
The application provides a self-capacitance data processing method and device, comprising the following steps: acquiring self capacitance value variation and mutual capacitance value variation corresponding to each direction electrode; normalizing the self-capacitance value variation corresponding to the directional electrode according to the mutual capacitance value variation corresponding to the directional electrode aiming at the self-capacitance value variation corresponding to each directional electrode to obtain a normalization result corresponding to each self-capacitance value variation; and positioning the contact by using the normalized result in the specified range. And the influence of the self-capacitance change quantity caused by temperature change on the contact positioning is eliminated.
Description
Technical Field
The present application relates to the field of display technologies, and in particular, to a method and an apparatus for processing self-capacitance data, a touch chip, and a computer readable storage medium.
Background
The self-mutual integrated touch control system refers to a control system of a self-capacitance and mutual capacitance simultaneous scanning type touch control screen. The touch screen comprising the control system can have the advantages of the self-capacitance touch screen and the mutual capacitance touch screen, and can support ten-finger touch and have good waterproof performance.
And detecting the transverse electrode array and the longitudinal electrode array in a self-capacitance scanning mode, respectively determining a transverse coordinate and a longitudinal coordinate according to the change of the capacitance before and after touch, and then combining the transverse coordinate and the longitudinal coordinate into a planar touch coordinate. The scanning data of the self-capacitance only has n transverse scanning data and m longitudinal scanning data, which respectively correspond to the touch conditions of rows and columns in the touch screen, and the total data amount is n+m (n represents the number of transverse scanning electrodes and m represents the number of longitudinal scanning electrodes), so the data processing capacity is small, and the response speed is high. The mutual capacitance is the coupling capacitance between the transverse electrode and the longitudinal electrode, when the mutual capacitance is detected, the transverse electrode sequentially sends out an excitation signal, and all the longitudinal electrodes simultaneously receive signals, so that the capacitance value of all the intersection points of the transverse electrode and the longitudinal electrode, namely the capacitance value of the two-dimensional plane of the whole touch screen, can be obtained. And according to the two-dimensional capacitance variation data of the touch screen, the coordinate of each touch point can be calculated. Therefore, even if there are a plurality of touch points on the screen, the true coordinates of each touch point can be calculated. The scanning data quantity of the mutual capacitance is n x m, and the mutual capacitance type scanning device has stronger two-dimensional space positioning accuracy.
However, the self-capacitance is a capacitance of the electrode to the ground, so temperature variation causes serious temperature drift problems of the self-capacitance data, and the temperature drift of the self-capacitance data can cause interference to the positioning of the contacts.
Disclosure of Invention
The embodiment of the application provides a self-capacitance data processing method in a self-mutual integrated touch system, which is used for solving the temperature drift problem of self-capacitance data.
In one aspect, an embodiment of the present application provides a method for processing self-capacitance data, including:
acquiring self capacitance value variation and mutual capacitance value variation corresponding to each direction electrode;
normalizing the self-capacitance value variation corresponding to each direction electrode according to the mutual capacitance value variation corresponding to the direction electrode to obtain a normalization result corresponding to each self-capacitance value variation;
and positioning the contact by using the normalized result in the specified range.
In an embodiment, normalizing the self-capacitance change amount corresponding to the direction electrode according to the mutual capacitance change amount corresponding to the direction electrode includes:
screening out mutual capacitance value variation larger than a first threshold value from all mutual capacitance value variation corresponding to the direction electrode;
adding the screened mutual capacitance value variation to obtain a capacitance value variation accumulated value;
and normalizing the self-capacitance change quantity corresponding to the directional electrode according to the known maximum value of the mutual capacitance change and the capacitance change accumulated value.
In an embodiment, according to a known maximum value of the mutual capacitance change and the capacitance change accumulated value, the self capacitance change corresponding to the directional electrode is normalized, and the following formula is adopted:
ScRXAdj_n＝ScRx_n×McMax/RxMcSum
where, scrxadj_n represents the normalization result, scrx_n represents the self capacitance value variation amount, mcMax represents the mutual capacitance value variation maximum value, and RxMcSum represents the capacitance value variation accumulated value.
In an embodiment, before normalizing the self-capacitance change amount corresponding to the direction electrode, the method further includes:
acquiring mutual capacitance data of each detection point;
comparing the mutual capacitance data of each detection point with a reference capacitance for each detection point to obtain the capacitance variation of each detection point;
and traversing the capacitance change quantity of each detection point to obtain the maximum value of the mutual capacitance change.
In an embodiment, before the mutual capacitance value variation amount larger than the first threshold value is screened from all the mutual capacitance value variation amounts corresponding to the directional electrode, the method further includes:
and determining the first threshold according to the maximum value of the mutual capacitance value variation.
In an embodiment, before the positioning of the contact using the normalized result within the specified range, the method further includes:
and generating the specified range according to the maximum value of the mutual capacitance value variation.
In an embodiment, the positioning the contact by using the normalized result within the specified range includes:
reserving normalization results in a specified range, and setting the normalization results not in the specified range to be zero;
and replacing the corresponding self-capacitance change amount by using the normalization result to position the contact.
The embodiment of the application provides a self-capacitance data processing device, which comprises:
the data acquisition module is used for acquiring the self capacitance value variation and the mutual capacitance value variation corresponding to the electrodes in each direction;
the normalization module is used for normalizing the self-capacitance value variation corresponding to each direction electrode according to the mutual capacitance value variation corresponding to the direction electrode to obtain a normalization result corresponding to each self-capacitance value variation;
and the data screening module is used for positioning the contact by using the normalized result in the specified range.
The embodiment of the application also provides a touch chip, which comprises:
a processor;
a memory for storing processor-executable instructions;
wherein the processor is configured to perform the above-described method of processing self-capacitance data.
The embodiment of the application also provides a computer readable storage medium, wherein the storage medium stores a computer program which can be executed by a processor to complete the self-capacitance data processing method.
According to the technical scheme provided by the embodiment of the application, for the self-capacitance value variation corresponding to each direction electrode, the self-capacitance value variation corresponding to the direction electrode is normalized according to the mutual capacitance value variation corresponding to the direction electrode, so that the self-capacitance value variation can be converted into the relative value of the relative mutual capacitance value variation, and the relative value is in a specified range, and therefore, the contact positioning can be performed only by using the normalization result in the specified range, and the influence of the self-capacitance value variation caused by temperature variation on the contact positioning is eliminated.
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In order to more clearly illustrate the technical solution of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below.
Fig. 1 is a schematic diagram of an application scenario of a method for processing self-capacitance data in a self-mutual integrated touch system according to an embodiment of the present application;
fig. 2 is a flow chart of a method for processing self-capacitance data in a self-mutual integrated touch system according to an embodiment of the present application;
FIG. 3 is a detailed flowchart of step S220 in the embodiment of FIG. 2;
FIG. 4 is a flowchart of determining a maximum value of a mutual capacitance change according to an embodiment of the present application;
fig. 5 is a block diagram of a self-capacitance data processing device in a self-mutual integrated touch system according to an embodiment of the application.
Detailed Description
The technical solutions in the embodiments of the present application will be described below with reference to the accompanying drawings in the embodiments of the present application.
Like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
Fig. 1 is a schematic diagram of an application scenario of a method for processing self-capacitance data in a self-mutual integrated touch system according to an embodiment of the present application. As shown in fig. 1, the application scenario includes a touch panel 110 and a touch system 120 connected to the touch panel. The touch panel 110 and the touch system 120 may be connected by DITO (single glass double layer circuit), single multi-point circuit, or the like. The touch system 120 may include a touch chip, which may include a detection circuit 121, a processor 122 connected to the detection circuit, and a memory 123 connected to the processor.
The detection circuit 121 is used for connecting the directional electrodes (longitudinal electrodes and transverse electrodes) of the touch control panel 110 and collecting voltage signals. The processor 122 is configured to convert the voltage signal into a capacitance value, and obtain self-capacitance data corresponding to each direction electrode and mutual capacitance data of each detection point (i.e. the intersection of the transverse electrode and the longitudinal electrode).
In an embodiment, the memory 123 is configured to store processor executable instructions, and the processor may be configured to execute the method for processing self-capacitance data in the self-mutual integrated touch system according to the present application.
The processor 122 may be an integrated circuit chip with signal processing capability. The processor may be a general-purpose processor, including a central processing unit (Central Processing Unit, CPU), a Network Processor (NP), etc.; but may also be a Digital Signal Processor (DSP), application Specific Integrated Circuit (ASIC), an off-the-shelf programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic device, discrete hardware components. Which may implement or perform the methods, steps and logic blocks disclosed in embodiments of the present application. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
The Memory 123 may be implemented by any type of volatile or non-volatile Memory device or combination thereof, such as static random access Memory (Static Random Access Memory, SRAM), electrically erasable Programmable Read-Only Memory (Electrically Erasable Programmable Read-Only Memory, EEPROM), erasable Programmable Read-Only Memory (Erasable Programmable Read Only Memory, EPROM), programmable Read-Only Memory (PROM), read-Only Memory (ROM), magnetic Memory, flash Memory, magnetic disk, or optical disk.
The present application also provides a computer readable storage medium, where a computer program is stored, where the computer program can be executed by the processor 122 to complete the processing method of self-capacitance data in the self-mutual integrated touch system provided by the embodiment of the present application.
Fig. 2 is a flow chart of a self-capacitance data processing method according to an embodiment of the application. As shown in fig. 2, the method may include the following step S210 to step S230.
Step S210: and acquiring the self capacitance value variation and the mutual capacitance value variation corresponding to the electrodes in each direction.
Wherein the directional electrodes include a transverse electrode and a longitudinal electrode. The transverse electrodes may not be exactly orthogonal to the longitudinal electrodes. When the self-capacitance scanning mode is adopted, each direction electrode corresponds to a self-capacitance variation. Assuming that there are m transverse electrodes and n longitudinal electrodes, there are m+n self-capacitance value variations, m representing the total number of transverse electrodes and n representing the total number of longitudinal electrodes. The self capacitance change amount is the change amount between the capacitance detected by an electrode in a certain direction and the fixed capacitance when the finger touches. The fixed capacitance refers to a capacitance value detected without touch.
The mutual capacitance scanning system may share the electrodes of the self capacitance scanning system, thereby performing the mutual capacitance scanning and the self capacitance scanning in a time-sharing manner. The transverse electrode and the longitudinal electrode of the mutual capacitance scanning mode can be independently arranged, and if the transverse electrode and the longitudinal electrode are independently arranged, self capacitance scanning and mutual capacitance scanning can be simultaneously carried out. In mutual capacitance scanning, the cross points of the transverse electrodes and the longitudinal electrodes form coupling capacitances, so that the m transverse electrodes and the n longitudinal electrodes can have coupling capacitances of m×n cross points (i.e., detection points), that is, mutual capacitances. If m transverse electrodes and n longitudinal electrodes are provided, the mutual capacitance change amount is m×n, and each detection point corresponds to one mutual capacitance change amount. The mutual capacitance value variation refers to the variation between the currently detected coupling capacitance and the reference capacitance. The reference capacitance can be regarded as a coupling capacitance when no touch is caused.
For example, assume that there are m longitudinal electrodes R 1 、R 2 … … Rm and n transverse electric wiresPolar T 1 、T 2 … … Tn, for any one of the vertical electrodes Rx, there may be one self-capacitance change amount corresponding to the vertical electrode Rx and n mutual capacitance change amounts of n detection points on the vertical electrode Rx. The n detection points refer to the crossing points of the longitudinal electrode Rx and all the transverse electrodes.
Step S220: and normalizing the self-capacitance change corresponding to the direction electrode according to the mutual capacitance change corresponding to the direction electrode aiming at the self-capacitance change corresponding to the direction electrode, so as to obtain a normalization result corresponding to each self-capacitance change.
Because the mutual capacitance data is less affected by temperature, the embodiment of the application can normalize the self-capacitance change based on the mutual capacitance change, and reduce the influence caused by temperature drift.
The mutual capacitance change corresponding to the directional electrode refers to the mutual capacitance change formed by crossing the directional electrode. For example, assume that there are m longitudinal electrodes R 1 、R 2 … … Rm and n transverse electrodes T 1 、T 2 … … Tn for passing through the longitudinal electrode R 1 Detecting the capacitance change C of the self-capacitance R1 Can be based on the longitudinal electrode R 1 And n transverse electrodes T 1 、T 2 N mutual capacitance variation amounts (C) of … … Tn intersections R1T1 、C R1T2 、C R1T3 ……C R1Tn ) For self-capacitance change C R1 Normalization was performed. Similarly, the self-capacitance change corresponding to each electrode in each direction can be normalized according to the capacitance change of the mutual capacitance formed by crossing the electrodes in the direction.
The normalization result is a result obtained by normalizing the self-capacitance change. In an embodiment, the normalization of the self-capacitance variation of the electrode in a certain direction can be performed by: calculating the SUM SUM of the capacitance variation of the mutual capacitance formed by crossing the electrodes in the direction; then, a relative value of the self-capacitance change amount and the sum of the capacitance change amounts is calculated. The amount of change in the self-capacitance value can be expressed in terms of a relative value, which can be considered as a normalization result.
Step S230: and positioning the contact by using the normalized result in the specified range.
In one embodiment, if the normalized result (i.e., the relative value) of the self-capacitance change of a directional electrode is within a specified range, then the directional electrode may be considered to have a contact thereon, whereas if it is not within the specified range, then the directional electrode may be considered to have no contact thereon. Thus eliminating the interference caused by the temperature drift of the self-capacitance data. Wherein the specified range may be empirically set, and in one embodiment the specified range may be between 0.3-3.
In an embodiment, the normalized result in the specified range may be retained, the normalized result not in the specified range is set to 0, and the original self-capacitance value variation is replaced by the updated normalized result. I.e. using longitudinal electrodes R 1 Self-capacitance change C R1 Normalized result S of (2) R1 Replacement C R1 Longitudinal electrode R 2 Self-capacitance change C R2 Normalized result S of (2) R2 Replacement C R2 And so on. Whereby the amount of change in the self-capacitance value due to the temperature change is eliminated.
According to the technical scheme provided by the embodiment of the application, for the self-capacitance value variation corresponding to each direction electrode, the self-capacitance value variation corresponding to the direction electrode is normalized according to the mutual capacitance value variation corresponding to the direction electrode, so that the self-capacitance value variation can be converted into the relative value of the relative mutual capacitance value variation, and the relative value is in a specified range, and therefore, the contact positioning can be performed only by using the normalization result in the specified range, and the influence of the self-capacitance value variation caused by temperature variation on the contact positioning is eliminated.
In an embodiment, as shown in fig. 3, the step S220 may include the following steps S221 to S223.
Step S221: and screening the mutual capacitance value variation larger than a first threshold value from all the mutual capacitance value variation corresponding to the direction electrode.
The first threshold may be set according to an empirical value of the capacitance change amount of the mutual capacitance when touched. In another embodiment, the first threshold may be 25%, 30% or 35% of the maximum value of the mutual capacitance variation upon a single finger touch. In other embodiments, the amount of change in the mutual capacitance value of each detection point may be traversed, a maximum value of change in the mutual capacitance value may be determined, and 30% of the maximum value of change in the mutual capacitance value may be used as the first threshold.
For example, a longitudinal electrode R 1 And n transverse electrodes T 1 、T 2 The variation of the capacitance value of the n mutual capacitors at the … … Tn intersection point can be C R1T1 、C R1T2 、C R1T3 ……C R1Tn Assume that the mutual capacitance value variation amount larger than the first threshold value is C R1T2 、C R1T3 Then C can be screened out R1T2 、C R1T3 . Similarly, for each direction electrode, the mutual capacitance variation corresponding to the direction electrode and larger than the first threshold value can be screened out.
Step S222: and adding the screened capacitance change amounts of the mutual capacitors to obtain a capacitance change accumulated value.
For example, C R1T2 +C R1T3 The sum may be considered as the capacitance change accumulated value.
Step S223: and normalizing the self-capacitance change quantity corresponding to the directional electrode according to the known maximum value of the mutual capacitance change and the capacitance change accumulated value.
In one embodiment, normalization may be performed using the following equation:
ScRXAdj_n＝ScRx_n×McMax/RxMcSum
where, scrxadj_n represents the normalization result, scrx_n represents the self capacitance value variation amount, mcMax represents the mutual capacitance value variation maximum value, and RxMcSum represents the capacitance value variation accumulated value.
In an embodiment, the specified range may be between 0.3 and 3 times of the maximum value McMax of the mutual capacitance value, and for the normalization result scanxadj_n of the self capacitance value variation calculated by the above formula, it may be compared whether the normalization result scanxadj_n is within the specified range, the normalization result within the specified range is retained, and the other normalization results are set to zero, so that the normalization result scanxadj_n is used to replace the original self capacitance value variation scanx_n, and the interference of the self capacitance temperature drift is eliminated.
In one embodiment, the maximum value of the mutual capacitance change may be a fixed known amount. In other embodiments, as shown in fig. 4, the maximum value of the mutual capacitance change can be obtained through the following steps S401 to S402.
Step S401, obtaining mutual capacitance data of each detection point.
The detection point is the intersection of the lateral electrode and the longitudinal electrode, which forms a coupling capacitance, i.e. a mutual capacitance. Mutual capacitance data refers to the magnitude of the coupling capacitance of the currently detected crossover point.
Step S402, comparing the mutual capacitance data of each detection point with a reference capacitance to obtain the mutual capacitance variation of each detection point.
The reference capacitance may be regarded as a coupling capacitance at a detection point when no touch is made. The reference capacitance at a certain detection point can be regarded as a fixed value C f The mutual capacitance data of the detection point can be represented by Ce, and the capacitance variation of the detection point can be Ce-C f Is a value of (2).
Step S403, traversing the change amount of the mutual capacitance value of each detection point to obtain the maximum value of the mutual capacitance value.
And comparing the mutual capacitance change amounts of all the detection points to determine the maximum value of the mutual capacitance change, namely the maximum value of all the mutual capacitance change amounts.
Another embodiment of the present application provides a method for processing self-capacitance data in a self-mutual integrated touch system, where the method may include the following steps:
step 1: and traversing the mutual capacitance data of each detection point, scanning out the point with the maximum mutual capacitance data, and recording the capacitance change amount as McMax (namely the maximum value of the mutual capacitance change).
Step 2: the variation of the self capacitance detected by the n transverse electrodes is traversed and is denoted as ScRx_n. For each transverse electrode, traversing all mutual capacitance capacity value variation amounts corresponding to the transverse electrode, wherein the number of traversed mutual capacitance data is the number m of longitudinal electrodes. The change in mutual capacitance greater than TH is recorded and summed and noted as RxMcSum. Wherein the TH may be set to 30% of the maximum value of the mutual capacitance variation in the single finger touch.
Step 3: the formula scanxadj=scrx_n×mcmax/RxMcSum is used. And calculating a normalization result of the self-capacitance change amount corresponding to each transverse electrode.
Step 4: the scaxadj_n data satisfying ScAdjThMin < scaxadj_n < ScAdjThMax are retained, and the rest is set to zero. The ScAdjThMin may be 0.3 times McMax, scAdjThMax and 3 times McMax.
Step 5: traversing the self-capacitance change detected by the m longitudinal electrodes and marking the self-capacitance change as ScTx_m, and traversing all the mutual capacitance change corresponding to each longitudinal electrode. Data greater than TH are recorded and summed and noted as TxMcSum.
Step 6: the normalization result of the self-capacitance variation corresponding to each longitudinal electrode is calculated by using the formula sctxadj_m=sctx_m×mcmax/TxMcSum.
And 7, reserving the ScTXAdj_m data meeting the ScAdjThMin < ScTXAdj_m < ScAdjThMax, and setting the rest to zero.
Step 8: and the finally obtained ScRXAdj and ScTXAdj are utilized to replace the longitudinal self-capacitance variation and the transverse self-capacitance variation before, so that the interference of temperature drift on a touch control system can be effectively solved.
The following is an embodiment of the device of the present application, which may be used to execute the embodiment of the method for processing self-capacitance data in the self-mutual integrated touch system of the present application. For details not disclosed in the embodiment of the apparatus of the present application, please refer to an embodiment of a method for processing self-capacitance data in the self-mutual integrated touch system of the present application.
Fig. 5 is a block diagram of a self-capacitance data processing device in a self-mutual integrated touch system according to an embodiment of the present application, and as shown in fig. 5, the device may include: a data acquisition module 510, a normalization module 520, and a data screening module 530.
The data obtaining module 510 is configured to obtain a self capacitance value variation and a mutual capacitance value variation corresponding to each direction electrode;
the normalization module 520 is configured to normalize, for the self-capacitance variation corresponding to each direction electrode, the self-capacitance variation corresponding to the direction electrode according to the mutual capacitance variation corresponding to the direction electrode, to obtain a normalized result corresponding to each self-capacitance variation;
and the data screening module 530 is used for positioning the contacts by using the normalized results in the specified range.
The implementation process of the functions and actions of each module in the device is specifically shown in the implementation process of corresponding steps in the self-capacitance data processing method in the self-mutual integrated touch system, and is not described herein again.
In the several embodiments provided in the present application, the disclosed apparatus and method may be implemented in other manners. The apparatus embodiments described above are merely illustrative, for example, of the flowcharts and block diagrams in the figures that illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods and computer program products according to various embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). In some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
In addition, functional modules in the embodiments of the present application may be integrated together to form a single part, or each module may exist alone, or two or more modules may be integrated to form a single part.
The functions, if implemented in the form of software functional modules and sold or used as a stand-alone product, may be stored on a computer readable storage medium. Based on this understanding, the technical solution of the present application may be embodied essentially or in a part contributing to the prior art or in a part of the technical solution in the form of a software product stored in a storage medium, comprising several instructions for causing a computer device (which may be a personal computer, a server, a network device, etc.) to perform all or part of the steps of the method of the embodiments of the present application. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
Claims (8)
1. A method of processing self-capacitance data, comprising:
acquiring self capacitance value variation and mutual capacitance value variation corresponding to each direction electrode;
normalizing the self-capacitance value variation corresponding to each direction electrode according to the mutual capacitance value variation corresponding to the direction electrode to obtain a normalization result corresponding to each self-capacitance value variation;
positioning the contact by using the normalized result in the appointed range;
normalizing the self-capacitance change corresponding to the direction electrode according to the mutual capacitance change corresponding to the direction electrode, including:
screening out mutual capacitance value variation larger than a first threshold value from all mutual capacitance value variation corresponding to the direction electrode;
adding the screened mutual capacitance value variation to obtain a capacitance value variation accumulated value;
normalizing the self-capacitance change quantity corresponding to the directional electrode according to the known maximum value of the mutual capacitance change and the capacitance change accumulated value;
the positioning of the contact point by using the normalized result in the specified range comprises the following steps:
reserving normalization results in a specified range, and setting the normalization results not in the specified range to be zero;
and replacing the corresponding self-capacitance change amount by using the normalization result to position the contact.
2. The method of claim 1, wherein the self-capacitance change amount corresponding to the directional electrode is normalized according to a known maximum value of mutual capacitance change and the accumulated value of capacitance change, using the following formula:
ScRXAdj_n＝ScRx_n×McMax/RxMcSum
where, scrxadj_n represents the normalization result, scrx_n represents the self capacitance value variation amount, mcMax represents the mutual capacitance value variation maximum value, and RxMcSum represents the capacitance value variation accumulated value.
3. The method of claim 1, wherein prior to normalizing the self-capacitance change associated with the directional electrode, the method further comprises:
acquiring mutual capacitance data of each detection point;
comparing the mutual capacitance data of each detection point with a reference capacitance for each detection point to obtain the capacitance variation of each detection point;
and traversing the capacitance change quantity of each detection point to obtain the maximum value of the mutual capacitance change.
4. The method of claim 1, wherein before screening out the mutual capacitance value variation larger than the first threshold value from all the mutual capacitance value variation corresponding to the direction electrode, the method further comprises:
and determining the first threshold according to the maximum value of the mutual capacitance value variation.
5. The method of claim 1, wherein prior to the positioning of the contact using the normalized results within the specified range, the method further comprises:
and generating the specified range according to the maximum value of the mutual capacitance value variation.
6. A self-capacitance data processing apparatus, comprising:
the data acquisition module is used for acquiring the self capacitance value variation and the mutual capacitance value variation corresponding to the electrodes in each direction;
the normalization module is used for normalizing the self-capacitance value variation corresponding to each direction electrode according to the mutual capacitance value variation corresponding to the direction electrode to obtain a normalization result corresponding to each self-capacitance value variation;
the data screening module is used for positioning the contact by using the normalized result in the specified range;
the normalization module is further configured to:
screening out mutual capacitance value variation larger than a first threshold value from all mutual capacitance value variation corresponding to the direction electrode;
adding the screened mutual capacitance value variation to obtain a capacitance value variation accumulated value;
normalizing the self-capacitance change quantity corresponding to the directional electrode according to the known maximum value of the mutual capacitance change and the capacitance change accumulated value;
the data screening module is further configured to:
reserving normalization results in a specified range, and setting the normalization results not in the specified range to be zero;
and replacing the corresponding self-capacitance change amount by using the normalization result to position the contact.
7. The utility model provides a touch chip which characterized in that, the touch chip includes:
a processor;
a memory for storing processor-executable instructions;
wherein the processor is configured to perform the method of processing self-capacitance data according to any one of claims 1-5.
8. A computer readable storage medium, wherein the storage medium stores a computer program executable by a processor to perform the method of processing self-capacitance data according to any one of claims 1-5.
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