CN111697100A - Single-chip transceiving photoelectric component, single-chip transceiving module, photoelectric system and electronic equipment - Google Patents
Single-chip transceiving photoelectric component, single-chip transceiving module, photoelectric system and electronic equipment Download PDFInfo
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Abstract
The application relates to a single-chip transceiving optoelectronic component, a single-chip transceiving module, an optoelectronic system and an electronic device. According to an embodiment, an optoelectronic assembly may include: a plurality of photovoltaic units formed on the same epitaxial wafer, each photovoltaic unit including the same layer structure and layer material; and a driving circuit for driving the plurality of photoelectric cells; wherein each of the photoelectric cells is used as a light emitting cell or a photodetecting cell depending on a driving signal provided by the driving circuit. The plurality of photoelectric units in the photoelectric component can be manufactured by the same process, and each photoelectric unit can be used as a light-emitting unit and a photoelectric detection unit by forward bias or reverse bias driving, so that the photoelectric component with compact structure and rich functions is realized at low cost.
Description
Technical Field
The present invention relates generally to the field of optoelectronic devices, and more particularly, to an optical system including a light emitting unit and a light receiving unit, which are formed on a single epitaxial wafer through the same process to have the same layer structure and layer material, and are driven in different ways only by a driving circuit to serve as a light emitting unit and a light receiving unit, respectively, wherein active regions for receiving and emitting light are of the same layer or multilayer structure. The invention also relates to an optical transceiver module for optical communication, an optoelectronic system for detecting the three-dimensional shape of an object, and an electronic device comprising the optoelectronic assembly, the optical transceiver module or the optoelectronic system.
Background
The measurement of information such as three-dimensional shape, size, position and the like of an object is an important technical requirement in application scenes such as unmanned driving, industrial surveying and mapping, medical treatment, mobile phone face recognition and the like. In the prior art, a light emitting unit and a light receiving unit are generally adopted to respectively perform illumination and return light perception of an object to be detected.
Taking the mobile phone structured light as an example, a lattice projection structure and a photodetector array are usually disposed on the mobile phone, and the two devices are separated by a certain distance on the mobile phone. The lattice projection mechanism emits structured light, the shape of the structured light is modulated by the three-dimensional shape of the object after the structured light irradiates a human face or other objects, and the modulated light is demodulated after being received by the detector array to form a three-dimensional object image.
Similar applications exist in the field of autonomous driving. For example, an infrared light source emits infrared light to illuminate an object, and an infrared photoelectric detection unit detects parameters such as the shape, size, distance and the like of a three-dimensional object or environment by detecting the infrared red light, so that an automatic driving system forms a corresponding driving strategy. Compared with the traditional camera, the infrared detection can overcome the influence of severe weather such as heavy fog and the like, and has higher reliability.
In addition, in an optical communication system, an optical transceiver module is generally included, which has a light emitting structure (generally a laser) and a receiving structure (generally a photodiode detector) to implement an optical transceiving function.
Disclosure of Invention
In the above-described technology, the light emitting mechanism and the photodetector are each formed on two separate epitaxial wafers by different processes, and are respectively packaged as separate devices, which are separately provided in the system. If the light emitting unit and the detecting unit can be manufactured using a single chip, the system volume, power consumption and cost will be significantly reduced in the above application scenarios. In order to solve the problem, related technologies have attempted to prepare light emitting and detecting devices based on a single chip, but the light emitting mechanism and the detecting structure both realize their functions by different semiconductor epitaxial layers, and the epitaxial growth process is complicated and requires a special circuit to work in cooperation.
Light absorption in quantum wells is a problem that is widely studied by academia and industry. It is generally believed that quantum well materials can absorb photons, but the generated photogenerated carriers are limited by barriers and are difficult to enter a continuum state to form a current. However, the inventor finds through experiments that the quantum well placed in the PN junction has the abnormal phenomena of efficient carrier extraction and absorption enhancement, and the phenomena enable the quantum well in the PN junction to prepare a high-performance photoelectric detector. The semiconductor light emitting diode and the semiconductor laser have active region structures which are quantum wells arranged in PN junctions, and the device can be used as a detector by utilizing the phenomenon, such as reverse bias of bias voltage of the semiconductor light emitting diode or the semiconductor laser. Therefore, based on light emission and light absorption of quantum well materials under different bias conditions, the manufacturing of a single-chip light emitting and receiving component is hopefully realized by utilizing mature light emitting diode or vertical cavity surface emitting laser epitaxial materials, and the single-chip light emitting and receiving component can be processed by utilizing a single semiconductor epitaxial wafer.
It is believed that the quantum efficiency of forming a photodetector using its interband transition mechanism is low, limited by the thickness of the quantum well material. The invention greatly improves the quantum efficiency of the photoelectric detector based on the quantum well or quantum dot material by utilizing the modulation effect of the semiconductor PN junction on the light absorption and electricity extraction processes participated by the low-dimensional semiconductor material. After incident photons are absorbed by interband transition of a quantum well, photon-generated carriers rapidly enter a continuous state under the modulation of a PN junction, and rapidly form photocurrent under the combined action of an internal electric field and an external bias voltage. It will be appreciated that the principles of the invention are applicable not only to quantum well materials, but also to other low dimensional semiconductor materials including quantum dots, quantum wires, superlattices and the like.
According to an exemplary embodiment of the present invention, there is provided an optoelectronic component including: a plurality of photoelectric units formed on the same epitaxial wafer, each photoelectric unit having the same layer structure and layer material; and a driving circuit for driving the plurality of photoelectric cells; wherein each of the plurality of photoelectric cells is used as a light emitting cell or a photodetecting cell depending on a driving signal provided by the driving circuit.
In some examples, the plurality of photovoltaic cells are formed by the same process, thereby having the same layer structure and layer material.
In some examples, the light emitting and light absorbing regions of each photovoltaic cell include undoped quantum wells, quantum dots, quantum wires, or superlattice layers located in a PN junction depletion region, wherein the light emitting and light absorbing regions are the same single or multilayer structure.
In some examples, the epitaxial wafer employs an infrared light emitting diode structure, the quantum well comprises InGaAs material, the barrier comprises GaAs or AlGaAs, and the PN junction material comprises GaAs or AlGaAs.
In some examples, the epitaxial wafer employs an infrared vertical cavity surface emitting laser structure, the quantum well comprises InGaAs material, the potential barrier comprises GaAs or AlGaAs, the PN junction material comprises GaAs or AlGaAs, and wherein the upper and lower distributed feedback bragg mirrors comprise GaAs/AlGaAs material or dielectric material or metallic material.
In some examples, the photovoltaic cell functions as a light emitting cell when the driving circuit provides a forward bias to the PN junction; the photo cell functions as a photo detection cell when the driving circuit provides a reverse bias to the PN junction.
In some examples, the driving circuit further provides a modulation signal to the light emitting unit to modulate the light signal emitted by the light emitting unit.
In some examples, a portion of the plurality of photoelectric cells are configured as light emitting cells and the remaining portion of the plurality of photoelectric cells are configured as photodetecting cells.
In some examples, the light emitting unit is a vertical cavity surface reflection laser and the photodetecting unit is a vertical cavity surface reflection laser under reverse bias.
According to another exemplary embodiment of the present invention, there is provided an optoelectronic system for three-dimensional shape detection of an object, including: a light emitting mechanism for emitting a light signal to illuminate an object; the light receiving mechanism is used for receiving the return light signal reflected by the object and converting the return light signal into an electric signal; a drive circuit for driving the light emitting mechanism and the light receiving mechanism; and a processing unit for determining a distance between the optoelectronic system and the object based on the optical signal emitted by the light emitting mechanism and the return optical signal received by the light receiving mechanism, and further determining a three-dimensional shape of the object, wherein the light emitting mechanism and the light receiving mechanism are formed on the same epitaxial wafer through the same process so as to have the same layer structure and layer material, and the driving circuit applies different driving signals to the light emitting mechanism and the light receiving mechanism to drive the light emitting mechanism and the light receiving mechanism to emit the optical signal and receive the return optical signal respectively.
In some examples, the light emitting mechanism and the light receiving mechanism are formed on a single epitaxial wafer that is directly packaged.
In some examples, the single epitaxial wafer is divided to separate the light emitting mechanism and the light receiving mechanism, and then the light emitting mechanism and the light receiving mechanism are packaged separately from each other.
In some examples, the light emitting mechanism employs an InGaAs/GaAs based vertical cavity surface reflection laser and the light receiving mechanism is a reverse biased InGaAs/GaAs based vertical cavity surface reflection laser.
According to another exemplary embodiment of the present invention, there is provided an optical transceiver module including: a light emitting mechanism for emitting a light communication signal, the emitted light communication signal being transmitted via an optical fiber; the optical receiving mechanism is used for receiving the optical communication signal transmitted by the optical fiber and converting the optical communication signal into an electric signal; and a driving circuit for driving the light emitting mechanism and the light receiving mechanism, wherein the light emitting mechanism and the light receiving mechanism are formed on the same epitaxial wafer by the same process so as to have the same layer structure and layer material, and the driving circuit applies different driving signals to the light emitting mechanism and the light receiving mechanism to drive them to emit light communication signals and receive light communication signals, respectively.
In some examples, the light emitting mechanism is an InP-based laser structure and the detector employs a reverse biased InP-based laser.
In some examples, the laser structure and the detector are formed on the same epitaxial wafer by the same process, diced to be packaged separately, and placed at different locations inside the optical module.
According to another exemplary embodiment of the present invention, an electronic device is provided, which includes the above-mentioned optoelectronic assembly, optoelectronic system or optical transceiver module.
The invention has the beneficial effects that:
1. the existing optical detection system for information such as three-dimensional shape, distance, size and the like of an object needs a light-emitting unit and a detection unit no matter utilizing a structured light principle or a flight time principle, and the two structures are processed by two epitaxial wafers and then are integrated and packaged;
2. the light emitting array and the detection array adopted by the existing laser radar or structured light system have high extension difficulty and high price, and the light emitting and detecting units can be manufactured by utilizing the light emitting diode epitaxial wafer with better industrial foundation by utilizing the optical system, so that the production cost and the difficulty are reduced;
3. by utilizing the optical system manufactured by the invention, the geometrical configuration of the light-emitting unit and the detection unit is more flexible, the epitaxial structures of the light-emitting mechanism and the detection mechanism are completely the same, and the functions of the light-emitting mechanism and the detection mechanism can be defined only by the driving circuit, so that the laser can be arranged around the detector in a surrounding, adjacent, nested and other modes, and more flexibility is brought to image processing and the like;
4. the existing laser radar system usually forms a detector array in an assembling form, and by utilizing the structure related to the laser radar system, a luminous and detection array with larger scale, higher precision and better performance can be defined by a semiconductor process.
The above and other features and advantages of the present invention will become more apparent from the following detailed description of exemplary embodiments thereof, which is to be read in connection with the accompanying drawings.
Drawings
The above and other objects, features and advantages of the present application will become more apparent by describing in more detail exemplary embodiments thereof with reference to the attached drawings. The accompanying drawings are included to provide a further understanding of the embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. In the drawings, like reference numbers generally represent like parts or steps.
Fig. 1 is a schematic view of a photovoltaic system according to an embodiment of the present invention.
Figure 2 is a schematic diagram of a photovoltaic system according to another embodiment of the present invention.
Fig. 3 is a schematic structural diagram of an optoelectronic device according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of an optoelectronic assembly according to another embodiment of the present invention.
Fig. 5 is a schematic plan arrangement view of the light emitting unit and the detecting unit of the optoelectronic assembly according to an embodiment of the present invention.
Fig. 6 is a schematic plan arrangement view of a light emitting unit and a detecting unit of an optoelectronic assembly according to another embodiment of the present invention.
Fig. 7 is a schematic structural diagram of an optical transceiver module according to an embodiment of the present invention.
Detailed Description
The principles and features of the present invention are described below in conjunction with the following drawings. Exemplary embodiments of the present invention will be described below with reference to the accompanying drawings. It is to be understood that the exemplary embodiments are merely illustrative of the principles of the invention, and are not intended to limit the invention to the precise forms described. Rather, the invention may be practiced with more or less detail. In the drawings, like elements are denoted by like reference numerals, and a repetitive description thereof may be omitted.
Fig. 1 shows a schematic diagram of an optoelectronic system 100 according to an embodiment of the present invention, and illustrates an application of the optoelectronic system 100 of the present invention by taking human face three-dimensional morphology recognition as an example. As shown in fig. 1, the optoelectronic system 100 can be used to transmit an optical signal to a human face 10 to illuminate the human face 10, and receive a return optical signal reflected by the human face 10, so as to detect the three-dimensional appearance of the human face 10 for a human face recognition application. Of course, the optoelectronic system 100 of the present invention may also be applied to three-dimensional recognition in other fields, such as environment recognition in the field of automatic driving, SLAM map construction, and the like. In some embodiments, the optical signal used in the optoelectronic system 100 may be an infrared optical signal.
Referring to fig. 1, the optoelectronic system 100 includes a plurality of light emitting mechanisms (light emitting units) 102 and light receiving mechanisms (photodetecting units) 103 formed on a single epitaxial wafer 101, the light emitting mechanisms 102 being configured to emit light signals to illuminate an object such as a human face 10, and the light receiving mechanisms 103 being configured to receive return light signals emitted by the human face 10 and convert them into electrical signals. As will be described in further detail below, the light emitting mechanism 102 and the light receiving mechanism 103 may be formed on the same epitaxial wafer 101 by the same process to have the same layer structure and layer material, that is, structurally, the light emitting mechanism 102 and the light receiving mechanism 103 are the same device, which are used as the light emitting mechanism and the light receiving mechanism, respectively, by applying different driving signals only through the driving circuit 104, which will be discussed in further detail below. Although not shown, the driving circuit 104 may include a separate light emitting mechanism driving circuit and light receiving mechanism driving circuit.
The optoelectronic system 100 further comprises a processing unit 105 which can determine the distance between the optoelectronic system 100 and the respective point on the human face 10, and thus the three-dimensional shape of the human face 10, based on the light signal emitted by the light emitting means 102 and the return light signal received by the light receiving means 103. For example, in some embodiments, the processing unit 105 may determine the distance between the optoelectronic system 100 and various points on the human face 10 based on the time difference between the emitted light signal and the received back light signal; or in other embodiments, the light spot with the specific geometric pattern is transmitted by using the specific light-emitting structure, and the calculation is performed according to the distorted image shot by the detection unit after the light spot is reflected on the object to be measured, so as to determine the three-dimensional shape of the object, such as a human face.
In the embodiment of fig. 1, the light emitting mechanism 102 and the light receiving mechanism 103 may be formed on the same epitaxial wafer 101, which may be directly packaged, that is, the light emitting mechanism 102 and the light receiving mechanism 103 are packaged as a single device. The active area for light emission and detection is the area on the same epitaxial wafer, and the function of light emission or detection is only defined by the driving circuit 104, which can reduce the elements of the system such as volume, power consumption and cost to the maximum.
Fig. 2 shows another embodiment, which is substantially the same as the embodiment of fig. 1, except that the epitaxial wafer 101 is diced into two separate epitaxial wafers 101a and 101b after the light emitting mechanism 102 and the light receiving mechanism 103 are formed, wherein the light emitting mechanism 102 is located on the epitaxial wafer 101a and the light receiving mechanism 103 is located on the epitaxial wafer 101 b. The two devices may then be packaged separately to form two separate devices and placed at different locations on, for example, a printed circuit board. As described previously, the driving circuit 104 may include separate light-emitting mechanism driving circuit and light-receiving mechanism driving circuit to drive both, respectively. The embodiment of fig. 2 may reduce the optical collinearity effect of the system compared to the embodiment of fig. 1.
Fig. 3 is a schematic structural diagram of a single-chip optoelectronic device 200 according to an embodiment of the present invention, which can be applied to the optoelectronic system shown in fig. 1 and fig. 2, for example. In the embodiment of fig. 3, the single-chip optoelectronic assembly 200 includes a plurality of optoelectronic cells, each of which may be formed on the same epitaxial wafer by the same process, thereby having the same layer structure and layer material, to be used as a light emitting unit or a photodetecting unit depending only on a driving signal. By way of example, the optoelectronic assembly 200 of fig. 3 may utilize a single GaAs-based InGaAs quantum well infrared light emitting diode epitaxial wafer to define mesas of light emitting and detecting structures by semiconductor processing, wherein each mesa includes a top electrode formed thereon and a bottom electrode formed on one side of the substrate. The driver circuit 207 is interconnected to the device through the bottom electrode.
Referring to fig. 3, a GaAs-based infrared light emitting diode epitaxial wafer including a P-type layer 201, an undoped quantum well layer 202, and an N-type layer 203 may be first formed into a mesa structure having a top electrode in step 1 by using semiconductor lithography, dry or wet etching, metal evaporation, and other process flows.
Then in step 2, SiN or SiO is deposited by using plasma enhanced chemical vapor deposition technology based on the above process flow according to actual needs2An anti-reflective layer and a surface passivation layer (not shown) to further improve device performance.
Next, in step 3, a surface medium or metal plating 204 of the light emitting device can be added on the basis of the above process flow according to actual needs, so as to limit the waveguide propagation of light in the device and reduce optical crosstalk.
The substrate or bottom electrode layer 205 of the single chip light emitting/detecting assembly 200 may then be electrically interconnected with the driving circuit 207 using In pillars or other interconnect material 206, which may be flip chip or reflow soldered In step 4. Further, although not shown, the top electrode may be connected to the driving circuit 207 by, for example, wire bonding. The driving circuit 207 supplies a forward bias voltage to the light emitting device array to drive the light emitting device array to emit light, and supplies a reverse bias voltage to the detector array to collect photocurrent. According to actual needs, the light-emitting device can be provided with a modulation signal, and the photoelectric conversion signal obtained by the detector array can be amplified and converted into an analog signal/digital signal. Although not shown, the driving circuit 207 may include a light emitting unit driving circuit and a photo detection unit driving circuit that supply driving signals to the light emitting unit and the photo detection unit, respectively.
As shown in fig. 3, through the above steps, a plurality of photovoltaic units can be processed on the same semiconductor epitaxial wafer through the same semiconductor process, each photovoltaic unit includes the same layer structure and layer material, such as a P-type layer 201, an undoped quantum well layer 202, an N-type layer 203, a substrate or bottom electrode layer 205, and a surface dielectric or metal 2 layer 304, and each photovoltaic unit is connected to the driving circuit 207 through a conductive pillar or other interconnection structure 206. Of course, the area sizes of the respective photoelectric cells may be the same as or different from each other as necessary. It is to be understood that each of the photoelectric cells may function as both a light emitting cell and a light detecting cell, or a part of the cells may function as light emitting cells and another part of the cells may function as light detecting cells, depending on a driving signal supplied from the driving circuit 207.
When used as a light emitting unit, the driver circuit 207 supplies a forward bias voltage, and electron holes are injected into the undoped quantum well layers 202, respectively, and recombination light emission occurs therein;
when the photo-induced photon is used as a light detection unit, light emitted by the light emitting unit is highly modulated by an object to be detected and returns to the detection unit, the return light excites a photo-induced electron hole pair in a non-doped quantum well region of the detection unit, the photo-induced carrier is extracted under the reverse bias voltage provided by the driving circuit 207 according to the efficient extraction phenomenon of the limited photo-induced carrier in the PN junction, and an electric signal is formed after the photo-induced carrier is amplified by the driving current.
Besides the GaAs-based quantum well material system, an InP-based material system can be adopted, wherein the P-type layer 201 can be made of InGaAs, InGaAsP, InAlAs and InP materials, the quantum well 202 can be made of InGaAs/InGaAsP quantum well, InGaAs/InAlAs quantum well and InGaAs/InP quantum well, and of course, other low-dimensional semiconductor structures such as quantum dots, quantum wires and superlattice can also be adopted. The N-type region 203 may be InGaAs, InGaAsP, InAlAs, InP, and the substrate 205 may be InP.
Besides a GaAs quantum well material system, a GaSb-based material system can be adopted, wherein the P-type layer 201 can be made of GaSb, InAs, InAsSb, InAlSb and the like, the quantum well region 202 can be made of an InGaSb/GaSb quantum well, an InAsSb/GaSb quantum well, an InAs/GaSb quantum well or superlattice, the N-type region 203 can be made of GaSb, InAs, InAsSb and InAlSb, and the substrate 205 is GaSb.
FIG. 4 is a schematic diagram of an optoelectronic device 300 according to another embodiment of the present invention, which is a VCSEL-based single-chip light emitting deviceIn which the same elements as those of fig. 3 are denoted by the same reference numerals, and a repetitive description thereof will be omitted herein. As shown in fig. 4, the structure utilizes a GaAs-based InGaAs quantum well infrared vertical cavity surface emitting laser epitaxial wafer, which includes upper 301 and lower 302 distributed feedback bragg mirrors formed in P-type layer 201 and N-type layer 203, respectively, in contrast to an infrared light emitting diode. Wherein the Bragg mirror may be constructed of GaAs/AlGaAs, Si/SiO2Even metal, and the like, and different materials can be selected according to actual needs. Mesas of the light emitting and detecting structure are defined by a semiconductor process, wherein each mesa includes a top electrode and a bottom electrode formed on one side of the substrate. The driver circuit 207 is interconnected to the device through the bottom electrode. The process is similar to the structure of the photovoltaic module prepared by using the infrared light emitting diode in the example of fig. 3.
Besides the GaAs-based quantum well material system, an InP-based material system can be adopted, wherein the P-type layer 201 can be made of InGaAs, InGaAsP, InAlAs and InP materials, the quantum well region 202 can be made of InGaAs/InGaAsP quantum wells, InGaAs/InAlAs quantum wells and InGaAs/InP quantum wells, the N-type region 203 can be made of InGaAs, InGaAsP, InAlAs and InP materials, and the substrate 205 is made of InP.
Besides a GaAs quantum well material system, a GaSb-based material system can be adopted, wherein the P-type layer 201 can be made of GaSb, InAs, InAsSb, InAlSb and the like, the quantum well region 202 can be made of an InGaSb/GaSb quantum well, an InAsSb/GaSb quantum well, an InAs/GaSb quantum well or superlattice, the N-type region 203 can be made of GaSb, InAs, InAsSb and InAlSb, and the substrate 205 is GaSb.
As described above, a plurality of photoelectric cells formed on the same epitaxial wafer may have the same structure, and serve as light emitting cells or photodetecting cells based on only different driving methods. That is, the same photoelectric unit may be used as both the light emitting unit and the photodetecting unit. Therefore, it is possible to select any one or more of the plurality of photoelectric cells on the same epitaxial wafer to be used as a light emitting unit and the remaining photoelectric cells to be used as a photodetecting unit, or the same photoelectric cell to be used as a light emitting unit at a certain time and to be used as a photodetecting unit at another time. Fig. 5 shows the arrangement of the light emitting unit 401 and the detecting unit 402 in the optoelectronic package 400 according to an embodiment of the present invention. The light emitting units 401 and the detecting units 402 are arranged in an area array manner, the light emitting mechanism array (n rows × n 'columns, n and n' are both natural numbers greater than or equal to 1) is defined on one side of the epitaxial wafer, the detecting mechanism array (m rows × m 'columns, m and m' are both natural numbers greater than or equal to 1) is defined on the other side of the epitaxial wafer, and m, m ', n and n' can be equal to or different from each other. The functional definition of the light emission or detection of each unit is determined by a driving circuit (not shown), and the spacing between the light emission array and the detection array can be designed according to the actual application scenario.
Fig. 6 shows another arrangement of light emitting structures and detection mechanisms, wherein light emitting units 401 surround detection units 402 and together they form an array arrangement. The functional definition of the light emission or detection of each unit is determined by a driving circuit (not shown), and the spacing between the light emission array and the detection array can be designed according to the actual application scenario.
Fig. 7 is a schematic structural diagram of an optical transceiver module according to an embodiment of the present invention, which can be applied to an optical communication device, for example. As shown in fig. 7, the optical transceiver module 600 may include a light emitting mechanism 601 and a light receiving mechanism 602. The light emitting mechanism may emit a light communication signal, and the emitted light communication signal may be transmitted through an optical fiber; the light receiving mechanism 602 may receive the optical communication signal from the optical fiber and convert it into an electrical signal. In addition, the optical transceiver module 600 may further include a driving circuit 603, which may drive the light emitting mechanism 601 and the light receiving mechanism 602. The driving circuit 603 may be connected to a host (not shown) so as to output a reception signal to the host and receive a transmission signal from the host. Further, the drive circuit 603 can also perform a Digital Diagnosis and Monitoring (DDM) function on the light emitting mechanism 601 and the light receiving mechanism 602, and report the operating state of the light emitting mechanism 601 and the light receiving mechanism 602 to the host, or control the operation of the light emitting mechanism 601 and the light receiving mechanism 602 in response to a command of the host, such as adjusting their bias currents, transmission and reception powers, and the like.
As described above, the light emitting mechanism 601 and the light receiving mechanism 602 can be formed on the same epitaxial wafer by the same process to have the same layer structure and layer material, which can save manufacturing time and reduce cost. Different driving signals are applied to the light emitting mechanism and the light receiving mechanism by using a driving circuit 603 to drive them to emit a light communication signal and receive a light communication signal, respectively. In this regard, the detailed description has been made previously and will not be repeated here.
Some embodiments of the invention also provide an electronic device comprising at least one of the aforementioned optoelectronic assembly, optoelectronic system, and optical transceiver module. For example, the electronic device may be a mobile phone including the optoelectronic component or the optoelectronic system, an optoelectronic sensing subsystem of an automobile automatic driving system, or the like, or an optical communication device including the optical transceiver module, or the like. The electronic equipment of the invention can be applied to the fields of unmanned driving, industrial surveying and mapping, medical treatment, security protection, robots, portable electronic equipment and the like, and is not illustrated.
The foregoing describes the general principles of the present application in conjunction with specific embodiments, however, it is noted that the advantages, effects, etc. mentioned in the present application are merely examples and are not limiting, and they should not be considered essential to the various embodiments of the present application. Furthermore, the foregoing disclosure of specific details is for the purpose of illustration and description and is not intended to be limiting, since the foregoing disclosure is not intended to be exhaustive or to limit the disclosure to the precise details disclosed.
The block diagrams of devices, apparatuses, systems referred to in this application are only given as illustrative examples and are not intended to require or imply that the connections, arrangements, configurations, etc. must be made in the manner shown in the block diagrams. These devices, apparatuses, devices, systems may be connected, arranged, configured in any manner, as will be appreciated by those skilled in the art. Words such as "including," "comprising," "having," and the like are open-ended words that mean "including, but not limited to," and are used interchangeably therewith. The words "or" and "as used herein mean, and are used interchangeably with, the word" and/or, "unless the context clearly dictates otherwise. The word "such as" is used herein to mean, and is used interchangeably with, the phrase "such as but not limited to".
It should also be noted that in the devices, apparatuses, and methods of the present application, the components or steps may be decomposed and/or recombined. These decompositions and/or recombinations are to be considered as equivalents of the present application.
The previous description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects without departing from the scope of the application. Thus, the present application is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
The foregoing description has been presented for purposes of illustration and description. Furthermore, the description is not intended to limit embodiments of the application to the form disclosed herein. While a number of example aspects and embodiments have been discussed above, those of skill in the art will recognize certain variations, modifications, alterations, additions and sub-combinations thereof.
Claims (11)
1. An optoelectronic assembly comprising:
a plurality of photoelectric units formed on the same epitaxial wafer, each photoelectric unit having the same layer structure and layer material; and
a driving circuit for driving the plurality of photoelectric cells;
wherein each of the plurality of photoelectric cells is used as a light emitting cell or a photodetecting cell depending on a driving signal provided by the driving circuit.
2. The photovoltaic assembly of claim 1, wherein the plurality of photovoltaic units are formed by the same process to have the same layer structure and layer material.
3. The optoelectronic assembly of claim 1 wherein the light emitting and absorbing regions of each optoelectronic cell comprise undoped quantum wells, quantum dots, quantum wires, or superlattice layers located in a PN junction depletion region. Wherein the light-emitting and light-absorbing active regions are of the same layer or layers.
4. The optoelectronic assembly of claim 3, wherein the optoelectronic cell functions as a light emitting cell when the drive circuit provides a forward bias to the PN junction; the photo cell functions as a photo detection cell when the driving circuit provides a reverse bias to the PN junction.
5. The optoelectronic assembly of claim 4, wherein the drive circuit further provides a modulation signal to the light-emitting unit to modulate the light signal emitted by the light-emitting unit.
6. The optoelectronic assembly of claim 1, wherein a portion of the plurality of optoelectronic cells are configured as light emitting cells and a remaining portion of the optoelectronic cells are configured as photodetecting cells.
7. The optoelectronic assembly of claim 6 wherein the light emitting cell is a VCSEL and the photodetecting cell is a VCSEL under reverse bias.
8. An optoelectronic system for three-dimensional shape detection of an object, comprising:
a light emitting mechanism for emitting a light signal to illuminate an object;
the light receiving mechanism is used for receiving the return light signal reflected by the object and converting the return light signal into an electric signal;
a drive circuit for driving the light emitting mechanism and the light receiving mechanism; and
a processing unit for determining the distance between the optoelectronic system and the object based on the light signal emitted by the light emitting mechanism and the return light signal received by the light receiving mechanism, thereby determining the three-dimensional shape of the object,
the driving circuit applies different driving signals to the light emitting mechanism and the light receiving mechanism so as to drive the light emitting mechanism and the light receiving mechanism to respectively emit light signals and receive return light signals.
9. The optoelectronic system of claim 8, wherein the light emitting mechanism and the light receiving mechanism are formed on a single epitaxial wafer that is directly packaged or that is divided to separate the light emitting mechanism and the light receiving mechanism, which are then packaged separately from each other.
10. An optical transceiver module comprising:
a light emitting mechanism for emitting a light communication signal, the emitted light communication signal being transmitted via an optical fiber;
the optical receiving mechanism is used for receiving the optical communication signal transmitted by the optical fiber and converting the optical communication signal into an electric signal; and
a drive circuit for driving the light emitting mechanism and the light receiving mechanism,
the driving circuit applies different driving signals to the light emitting mechanism and the light receiving mechanism to drive the light emitting mechanism and the light receiving mechanism to respectively emit light communication signals and receive light communication signals.
11. An electronic device comprising the optoelectronic assembly of any one of claims 1-7, the optoelectronic system of any one of claims 8-9, or the optical transceiver module of claim 10.
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