CN111697006A - Display panel and preparation method thereof - Google Patents
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- CN111697006A CN111697006A CN202010504532.4A CN202010504532A CN111697006A CN 111697006 A CN111697006 A CN 111697006A CN 202010504532 A CN202010504532 A CN 202010504532A CN 111697006 A CN111697006 A CN 111697006A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 77
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 269
- 238000002161 passivation Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000011229 interlayer Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 8
- 239000002861 polymer material Substances 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 4
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- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 description 21
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- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Electroluminescent Light Sources (AREA)
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Abstract
The invention discloses a display panel and a preparation method thereof, wherein the display panel comprises: an active layer; and the lower conversion layer is arranged on at least one side of the active layer, the orthographic projection of the lower conversion layer covers the active layer, and the lower conversion layer converts the blue light or the ultraviolet light which is emitted to the active layer into red light. Compared with the existing display panel, the display panel is additionally provided with at least one down-conversion layer for converting the blue light or the ultraviolet light emitted to the active layer into the red light, and the red light has less influence on the stability of the active layer because the energy level of the red light is lower than that of the blue light and the ultraviolet light; meanwhile, a photomask process is saved, the production cost is reduced, and the transmittance and the aperture opening ratio are improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel and a preparation method of the display panel.
Background
Thin Film Transistors (TFTs) are the main driving elements in liquid crystal display devices and active matrix organic electroluminescent display devices, and are directly related to the development of high performance flat panel display devices. Indium Gallium Zinc Oxide (IGZO) has high mobility, is suitable for large-area production, is easily converted from an amorphous silicon (a-Si) process, and the like, and thus becomes a research hotspot in the technical field of thin film transistors at present.
In the process of fabricating an organic light-Emitting Diode (OLED), several Ultraviolet (UV) irradiation processes are performed, such as cleaning UV before evaporation to remove organic matter on the glass surface, and packaging UV curing. However, the IGZO active layer in the IGZO-TFT is very sensitive to processes and environments because UV photon energy is higher than the band gap of the oxide semiconductor to generate electron-hole pairs, so that the threshold voltage is lowered, and stability thereof is adversely affected.
The conventional device structure usually adopts an etching barrier Layer (ESL) and adds a metal light shielding Layer to protect an IGZO active Layer, which is not beneficial to reducing the cost of a TFT manufacturing process; meanwhile, due to the stacking of the source drain metal layer (SD) and the etching barrier layer, the channel size of the TFT device is larger, and the parasitic capacitance is also larger. However, the etching barrier layer and the metal light shielding layer cannot completely prevent the UV light from irradiating the IGZO, and the structure of the etching barrier layer and the metal light shielding layer rather reduces the transmittance of the device for the transparent device.
In summary, the current display panel has the technical problems of high production cost, poor stability of the active layer, and low panel transmittance and aperture ratio.
Disclosure of Invention
The embodiment of the invention provides a display panel and a preparation method of the display panel, which are used for solving the technical problems of high production cost, poor stability of an active layer and low panel transmittance and aperture ratio of the conventional display panel.
To solve the above problem, in a first aspect, the present invention provides a display panel including:
an active layer;
the down conversion layer is arranged on at least one side of the active layer, the orthographic projection of the down conversion layer covers the active layer, and the down conversion layer converts the blue light or the ultraviolet light emitted to the active layer into red light.
In some embodiments of the present invention, the liquid crystal display device further includes a substrate, a buffer layer, an interlayer dielectric layer, a passivation layer, a planarization layer, and a pixel defining layer, which are sequentially stacked, wherein the active layer is disposed on the buffer layer, and the down-conversion layer is disposed between the substrate and the buffer layer.
In some embodiments of the present invention, when the display panel includes two of the down conversion layers, the other of the down conversion layers is disposed between the passivation layer and the planarization layer.
In some embodiments of the present invention, the liquid crystal display further includes a substrate, a buffer layer, an interlayer dielectric layer, a passivation layer, a flat layer, and a pixel defining layer, which are sequentially stacked, wherein the down-conversion layer is disposed on a surface of the pixel defining layer, the surface being away from the flat layer.
In some embodiments of the invention, the thickness of the down conversion layer is 1 μm or less.
In a second aspect, the present invention provides a method for manufacturing a display panel, the method being used for manufacturing the display panel according to any one of the first aspect, including the steps of: providing an active layer; and
preparing a down conversion layer formed on at least one side of the active layer by spin coating or printing, the down conversion layer converting blue or ultraviolet light emitted toward the active layer into red light.
In some embodiments of the invention, preparing the down conversion layer comprises: the method comprises the steps of uniformly dispersing a down-conversion luminescent material in a transparent high polymer material, dissolving in ethanol, and carrying out spin coating or printing treatment, wherein the doping concentration of a down-conversion layer is 1.5 multiplied by 10 < -5 > -2%, and the absorption range of the down-conversion luminescent material to light is 260 nm-420 nm.
In some embodiments of the present invention, the down-conversion luminescent material is europium-doped yttrium vanadate or a rare earth complex, and the transparent polymer material is ethylene-vinyl acetate copolymer or polyvinyl alcohol.
In some embodiments of the present invention, the liquid crystal display further includes a substrate, a buffer layer, an interlayer dielectric layer, a passivation layer, a planarization layer, and a pixel defining layer, which are sequentially formed, wherein the active layer is formed on the buffer layer, and the down-conversion layer is formed between the substrate and the buffer layer and/or between the passivation layer and the planarization layer.
In some embodiments of the present invention, the liquid crystal display further includes a substrate, a buffer layer, an interlayer dielectric layer, a passivation layer, a planarization layer, and a pixel defining layer, which are sequentially formed, wherein the down-conversion layer is formed on a surface of the pixel defining layer, which is far away from the planarization layer.
Compared with the existing display panel, the display panel is additionally provided with at least one down-conversion layer for converting the blue light or the ultraviolet light emitted to the active layer into the red light, and the red light has less influence on the stability of the active layer because the energy level of the red light is lower than that of the blue light and the ultraviolet light; meanwhile, a photomask process is saved, the production cost is reduced, and the transmittance and the aperture opening ratio are improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a display panel according to another embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a display panel according to another embodiment of the present invention; and
FIG. 4 is a flow chart of a method of making in one embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
The prior display panel has the technical problems of high production cost, poor stability of an active layer and low panel transmittance and aperture ratio.
Accordingly, embodiments of the present invention provide a display panel and a method for manufacturing the display panel, which are described in detail below.
First, an embodiment of the invention provides a display panel, as shown in fig. 1, and fig. 1 is a schematic structural diagram of the display panel in an embodiment of the invention. The display panel includes an active layer 101; and a down conversion layer 102 disposed on at least one side of the active layer 101, an orthographic projection of the down conversion layer 102 covering the active layer 101, the down conversion layer 102 converting blue light or ultraviolet light emitted toward the active layer 101 into red light.
Compared with the existing display panel, the display panel provided by the invention has the advantages that at least one down-conversion layer 102 is added in the display panel and is used for converting blue light or ultraviolet light (with a shaded arrow in the figure, the same below) emitted to the active layer 101 into red light (with a hollow arrow in the figure, the same below), and the red light has less influence on the stability of the active layer 101 because the energy level of the red light is lower than that of the blue light and the ultraviolet light; meanwhile, a photomask process is saved, the production cost is reduced, and the transmittance and the aperture opening ratio are improved.
In the embodiment of the present invention, the display panel further includes a substrate base plate 103, a buffer layer 104, an interlayer dielectric layer 105, a passivation layer 106, a planarization layer 107, and a pixel defining layer 108, which are sequentially stacked, wherein the active layer 101 is disposed on the buffer layer 104, and the down-conversion layer 102 is disposed between the substrate base plate 103 and the buffer layer 104.
When the display panel is a thin film transistor with a top gate structure, the display panel further includes a gate insulating layer 109, a gate metal layer 110, a source-drain metal layer 111, a color filter layer 112, a conductive thin film layer (ITO) 113, a light emitting layer 114, and a cathode 115, where the active layer 101 is on the buffer layer 104, and the gate insulating layer 109 is on the active layer 101. The light is emitted from one side of the substrate 103 to the active layer 101, and in some embodiments, in order to protect the active layer 101, a metal light shielding layer is disposed during an incident process, but the metal light shielding layer is susceptible to a floating gate effect, and a variable voltage is applied to the metal light shielding layer, which causes unstable voltage in an operating state of the TFT. In the embodiment of the present invention, the down conversion layer 102 replaces the metal light shielding layer during the incident process, specifically, the down conversion layer 102 is disposed between the substrate 103 and the buffer layer 104, and the light from the lower side in the figure passes through the substrate 103 and reaches the down conversion layer 102.
On the basis of the above embodiments, as shown in fig. 2, fig. 2 is a schematic structural diagram of a display panel in another embodiment of the present invention. When the display panel includes two of the down conversion layers 102, named as a first down conversion layer 102 and a second down conversion layer 116 in this embodiment, the first down conversion layer 102 disposed between the substrate base plate 103 and the buffer layer 104 is not changed in position, and the other second down conversion layer 116 is disposed between the passivation layer 106 and the planarization layer 107. The second down-conversion layer 116 can convert at least a part of blue light or ultraviolet light emitted from the pixel defining layer 108 to the active layer 101 into red light, and can convert at least a part of blue light or ultraviolet light emitted from the light emitting layer 114 to the active layer 101 into red light, and meanwhile, because the energy level of the red light is low, after the blue light or ultraviolet light of high-energy photons is absorbed, the down-conversion layer 116 emits more low-energy photons, namely, emits red light with higher brightness, and after the red light is reflected by the metal electrode, the brightness of the light emitting side is increased.
In another embodiment of the present invention, as shown in fig. 3, fig. 3 is a schematic structural diagram of a display panel in another embodiment of the present invention. The display panel comprises an active layer 201, a down-conversion layer 202, a substrate base plate 203, a buffer layer 204, an interlayer dielectric layer 205, a passivation layer 206, a flat layer 207 and a pixel definition layer 208 which are sequentially stacked, wherein the down-conversion layer 202 is arranged on one side surface of the pixel definition layer 208 far away from the flat layer 207.
When the display panel is an etching barrier type thin film transistor, the display panel further includes a gate insulating layer 209, an etching barrier layer 210, a source-drain metal layer 211, a color filter layer 212, a conductive thin film layer 213, a light emitting layer 214, and a cathode 215, wherein the gate insulating layer 209 is on the buffer layer 204, the active layer 201 is on the gate insulating layer 209, and the etching barrier layer 210 is on the active layer 201. The light is emitted from one side of the pixel defining layer 208 to the active layer 201, the down conversion layer 202 is arranged in the incident process, specifically, the down conversion layer 202 is arranged on one side surface of the pixel defining layer 208 far away from the flat layer 207, the light from the upper part in the figure is directly incident on the down conversion layer 202, at least part of blue light or ultraviolet light in the light is converted into red light, the red light is emitted continuously according to the original propagation path, and the influence on the active layer 101 is small due to the low energy level of the red light.
Preferably, the thickness of the down conversion layer 102 is less than or equal to 1 μm, and it is understood that, if the second down conversion layer 116 is present, the thickness of the second down conversion layer 116 is also less than or equal to 1 μm, and the material of the active layer 101 is a metal oxide semiconductor, and more preferably, the material of the active layer 101 is indium gallium zinc oxide.
In order to better manufacture the display panel in the embodiment of the invention, on the basis of the display panel, the embodiment of the invention also provides a preparation method of the display panel, and the preparation method is used for preparing the display panel in the embodiment.
The preparation method comprises the following steps: providing an active layer 101; and
a down conversion layer 102, which converts blue or ultraviolet light emitted to the active layer into red light, is prepared and formed on at least one side of the active layer 101 by spin coating or printing.
Specifically, preparing the down conversion layer 102 includes: the down-conversion luminescent material is uniformly dispersed in the transparent high polymer material, then dissolved in ethanol, and then spin-coated or printed.
Preferably, the doping concentration of the down conversion layer 102 is 1.5 multiplied by 10 < -5 > to 2 percent, and the absorption range of the down conversion layer to light is 260nm to 420 nm. It will be appreciated that the dominant wavelengths of blue light are 400nm to 450nm and the dominant wavelength of uv light is 10nm to 400nm, and that the absorption range of the down conversion layer 102 includes at least a portion of the blue or uv light.
Preferably, the down-conversion luminescent material is europium-doped yttrium vanadate (YVO4: Eu3+) or rare earth complex (Eu (DBM)3 Phen); the transparent high polymer material is ethylene-vinyl acetate copolymer (EVA) or polyvinyl alcohol (PVA).
In one embodiment of the present invention, as shown in fig. 4, fig. 4 is a flow chart of a preparation method in one embodiment of the present invention. The preparation method of the display panel comprises the following steps:
s1, dissolving PVA doped with 1.5 x 10 < -5 > -2% Eu (DBM)3Phen in ethanol, and spin-coating the PVA on a substrate base plate 103 to form a lower conversion layer 102;
s2, preparing a buffer layer 104 on the down conversion layer 102;
s3, sequentially depositing an active layer 101, a gate insulating layer 109 and a gate metal layer 110 on the buffer layer 104;
s4, depositing an interlayer dielectric layer 105 on the gate metal layer 110;
s5, depositing a source drain metal layer 111 on the interlayer dielectric layer 105, and depositing a passivation layer 106 on the source drain metal layer 111;
s6, sequentially preparing a color filter layer 112, a planarization layer 107, a conductive thin film layer 113, a pixel defining layer 108, a light emitting layer 114 and a cathode 115 on the passivation layer 106.
And S7, packaging.
Specifically, step S3 further includes: dry etching is performed on the gate insulating layer 109, wet etching is performed on the gate metal layer 110, wherein physical vapor deposition is adopted for preparing the active layer 101 and the gate metal layer 110, chemical vapor deposition is adopted for preparing the gate insulating layer 109, and the gate insulating layer 109 is made of silicon nitride.
In step S5, wet etching is further performed on the source/drain metal layer 111, the passivation layer 106 is made of silicon nitride, and the passivation layer 106 protects the source/drain metal layer 111.
In step S6, the light-emitting layer 114 is prepared by evaporation, and the cathode 115 is prepared by evaporation or magnetron sputtering.
In this embodiment, the lower conversion layer 102 replaces the metal light shielding layer, thereby saving a photomask process and reducing the production cost.
On the basis of the above embodiment, in another embodiment, in S5, the method further includes: the second down-conversion layer 116 is printed on the passivation layer 106 by dissolving PVA doped with 1.5 x 10-5-2% Eu (DBM)3Phen in ethanol, wherein the second down-conversion layer 116 is formed between the passivation layer 106 and the planarization layer 107, and a orthographic projection of the second down-conversion layer 116 can cover the active layer 101.
In another embodiment of the present invention, the manufacturing method is similar to the above manufacturing method, except that, in step S3: sequentially depositing a gate insulating layer 209, an active layer 201 and an etching barrier layer 210 on the buffer layer 204; and the down conversion layer 202 is not spin-coated on the substrate base plate 203, but in step S7, PVA doped with 1.5 × 10 "5-2% eu (dbm)3Phen is dissolved in ethanol, spin-coated on the surface of the pixel defining layer 208 away from the planarization layer 207, to form the down conversion layer 202, and then an encapsulation process is performed.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and parts that are not described in detail in a certain embodiment may refer to the above detailed descriptions of other embodiments, and are not described herein again. In a specific implementation, each unit or structure may be implemented as an independent entity, or may be combined arbitrarily to be implemented as one or several entities, and specific implementations of each unit, structure, or operation may refer to the foregoing method embodiments, which are not described herein again.
The above embodiments of the present invention are described in detail, and the principle and the implementation of the present invention are explained by applying specific embodiments, and the above description of the embodiments is only used to help understanding the method of the present invention and the core idea thereof; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A display panel, comprising:
an active layer; and
the down conversion layer is arranged on at least one side of the active layer, the orthographic projection of the down conversion layer covers the active layer, and the down conversion layer converts the blue light or the ultraviolet light emitted to the active layer into red light.
2. The display panel according to claim 1, further comprising a substrate base plate, a buffer layer, an interlayer dielectric layer, a passivation layer, a planarization layer, and a pixel defining layer, which are sequentially stacked, wherein the active layer is disposed on the buffer layer, and the down-conversion layer is disposed between the substrate base plate and the buffer layer.
3. The display panel of claim 2, wherein when the display panel includes two of the down-conversion layers, the other down-conversion layer is disposed between the passivation layer and the planarization layer.
4. The display panel according to claim 1, further comprising a substrate base plate, a buffer layer, an interlayer dielectric layer, a passivation layer, a planarization layer, and a pixel defining layer, which are sequentially stacked, wherein the down-conversion layer is disposed on a surface of the pixel defining layer on a side away from the planarization layer.
5. The display panel of claim 1 wherein the thickness of the down conversion layer is 1 μm or less.
6. A preparation method of a display panel is characterized by comprising the following steps:
providing an active layer; and
preparing a down conversion layer formed on at least one side of the active layer by spin coating or printing, the down conversion layer converting blue or ultraviolet light emitted toward the active layer into red light.
7. The method of producing as claimed in claim 6, wherein producing the down conversion layer comprises: the method comprises the steps of uniformly dispersing a down-conversion luminescent material in a transparent high polymer material, dissolving in ethanol, and carrying out spin coating or printing treatment, wherein the doping concentration of a down-conversion layer is 1.5 multiplied by 10 < -5 > -2%, and the absorption range of the down-conversion luminescent material to light is 260 nm-420 nm.
8. The method according to claim 7, wherein the down-conversion luminescent material is europium-doped yttrium vanadate or a rare earth complex, and the transparent polymer material is ethylene-vinyl acetate copolymer or polyvinyl alcohol.
9. The method according to claim 6, further comprising a substrate, a buffer layer, an interlayer dielectric layer, a passivation layer, a planarization layer, and a pixel defining layer, wherein the active layer is formed on the buffer layer, and the down-conversion layer is formed between the substrate and the buffer layer and/or between the passivation layer and the planarization layer.
10. The manufacturing method according to claim 6, further comprising a substrate, a buffer layer, an interlayer dielectric layer, a passivation layer, a planarization layer, and a pixel defining layer, which are sequentially formed, wherein the down-conversion layer is formed on a surface of the pixel defining layer on a side away from the planarization layer.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN112331713A (en) * | 2020-11-17 | 2021-02-05 | 昆山工研院新型平板显示技术中心有限公司 | Array substrate, display panel and display device |
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| CN114038916A (en) * | 2021-10-08 | 2022-02-11 | 华南理工大学 | Insulating film, thin film transistor using the same, and use thereof |
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| CN114038916A (en) * | 2021-10-08 | 2022-02-11 | 华南理工大学 | Insulating film, thin film transistor using the same, and use thereof |
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