CN111696913A - Hole filling method - Google Patents
Hole filling method Download PDFInfo
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- CN111696913A CN111696913A CN201910185473.6A CN201910185473A CN111696913A CN 111696913 A CN111696913 A CN 111696913A CN 201910185473 A CN201910185473 A CN 201910185473A CN 111696913 A CN111696913 A CN 111696913A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
Abstract
The invention provides a hole filling method, comprising a pre-filling stage and a main filling stage after the pre-filling stage; the pre-fill phase comprises: a first pre-fill step, carried out for a first predetermined time, to deposit a reactant in the hole to be filled; continuing a second pre-fill step for a second predetermined time to etch the deposition reactant in the hole to be filled; the main filling phase comprises: continuing a first main filling step for a third predetermined time to deposit a reactant in the hole to be filled; and continuing to perform a second main filling step for a fourth preset time so as to etch the deposition reactant in the hole to be filled. By the invention, the uniformity of hole filling and the size of the hole opening are ensured.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a hole filling method.
Background
As the feature size of the chip shrinks, the via and trench openings and aspect ratios decrease, which can cause significant difficulties in the deposition of the barrier/copper seed layer. If the opening is too small, the groove cannot be completely filled in the subsequent electroplating process, a cavity is formed, and the electrical performance of the chip is seriously influenced and even the chip fails; in order to uniformly fill a thin barrier layer/copper seed crystal layer in a hole with a large aspect ratio and ensure a large opening, the prior international process mainly adopts a process of coating first and then etching.
Specifically, the coating process mainly aims at forming a copper film with good compactness and effectively filling a deep hole; and introducing back-blown gas and process gas, loading direct-current power after the air pressure in the cavity is stable, starting to generate plasma, maintaining the generation of the plasma under the conditions of high direct-current power and low bias power, depositing copper on the wafer, and effectively filling the deep hole.
And in the etching process, after the coating process is finished, the plasma is generated by restarting glow, the generation of the plasma is maintained under the conditions of high direct current power and high bias power, and the deep hole is effectively etched, so that the coverage rate of the film in the deep hole is more uniform. Meanwhile, a part of the protruding part formed in the deposition process can be sputtered off, so that the opening is larger, and the normal operation of the subsequent electroplating process can be effectively ensured.
Aiming at the higher process requirements of different products on hole filling, longer sputtering deposition time is needed to ensure the film thickness, and longer etching time is needed to ensure the step coverage rate, but after the deposition time is prolonged, the opening at the top of the deep hole is reduced along with the prolonging of the deposition time, plasma entering the deep hole is reduced in the subsequent etching stage, the etching at the bottom is influenced, and meanwhile, once the protruding part is formed in the deposition stage, the protruding part is difficult to etch in the subsequent etching stage.
Therefore, the size of the top opening of the sample after hole filling is not large enough, and the protruding part generated in the process may increase the probability of generating voids in the subsequent electroplating process, so that the device fails.
Disclosure of Invention
The present invention is directed to at least one of the problems of the prior art, and provides a hole filling method, which has a pre-filling stage and a main filling stage, so as to avoid large protrusions caused by the particle pile deposited on the top of the opening for a long time at one time, and ensure uniformity of hole filling and the size of the hole opening.
To achieve the object of the present invention there is provided a hole filling method,
comprising a pre-fill phase and a main fill phase following the pre-fill phase;
the pre-fill phase comprises: a first pre-fill step, carried out for a first predetermined time, to deposit a reactant in the hole to be filled;
continuing a second pre-fill step for a second predetermined time to etch the deposition reactant in the hole to be filled;
the main filling phase comprises: continuing a first main filling step for a third predetermined time to deposit a reactant in the hole to be filled;
and continuing to perform a second main filling step for a fourth preset time so as to etch the deposition reactant in the hole to be filled.
Preferably, the first main filling step includes introducing process gas into the reaction chamber, turning on the dc power supply and the rf power supply, and respectively loading dc power and rf power to the target and the base to deposit the reactant in the hole to be filled;
and the second main filling step comprises the steps of keeping the direct-current power supply and the radio-frequency power supply in an opening state, and adjusting the radio-frequency power so as to carry out secondary filling on the hole to be filled by etching the deposition reactant.
Preferably, the first pre-filling step includes introducing a process gas into the reaction chamber, turning on the dc power supply and the rf power supply, and respectively loading the dc power and the rf power to the target and the susceptor to deposit the reactant in the hole to be filled;
the second pre-filling step includes maintaining the dc power supply and the rf power supply in an on state and adjusting the rf power to secondarily fill the hole to be filled by etching the deposition reactant.
Preferably, the first predetermined time of the pre-fill phase is shorter than the third predetermined time of the main fill phase.
Preferably, the first pre-filling step further comprises:
in the pre-glow starting stage, the process gas is introduced into the reaction chamber, the direct-current power supply is started, and the magnitude of the direct-current power loaded to the target by the direct-current power supply is a first direct-current power value so as to realize plasma glow starting;
and in the pre-deposition stage, stopping introducing the process gas into the reaction chamber, and increasing the direct current power to a second direct current power value so that the plasma bombards the target to generate the reactant, and simultaneously turning on the radio frequency power supply.
Preferably, the first main filling step further includes:
in the main glow starting stage, the process gas is introduced into the reaction chamber, the direct-current power supply is started, and the direct-current power loaded to the target by the direct-current power supply is the first direct-current power value so as to realize plasma glow starting;
and in the main deposition stage, stopping introducing the process gas into the reaction chamber, and increasing the direct current power to the second direct current power value so that the plasma bombards the target to generate the reactant, and simultaneously turning on the radio frequency power supply.
Preferably, the duration of the main deposition phase is three times the duration of the pre-deposition phase.
Preferably, the fourth predetermined time is three times the second predetermined time.
Preferably, the adjusting the magnitude of the radio frequency power further includes:
and increasing the radio frequency power from a first radio frequency power value to a second radio frequency power value.
Preferably, the first dc power value is 1000W, and the second dc power value is 30000-40000W.
Preferably, the first RF power is 50-200W, and the second RF power is 800-1500W.
The invention has the following beneficial effects:
the hole filling method provided by the invention comprises the following steps: a pre-fill phase and a main fill phase following the pre-fill phase; the pre-fill phase includes: a first pre-fill step, carried out for a first predetermined time, to deposit a reactant in the hole to be filled; continuing a second pre-fill step for a second predetermined time to etch the deposited reactant in the hole to be filled; the main filling stage comprises: continuing the first main filling step for a third predetermined time to deposit a reactant in the hole to be filled; and continuing to perform a second main filling step for a fourth preset time so as to etch the deposition reactant in the hole to be filled. The whole filling process is divided into the pre-filling stage and the main filling stage by the invention, so that the time for depositing reactants in a single time is reduced, etching is carried out after deposition in the pre-filling stage, accumulation of particles on the top of the opening in the deposition stage is avoided, and the subsequent main filling stage is ensured to be carried out smoothly. Further, larger protrusions due to particle accumulation on the top of the opening due to one-time long-time deposition are also avoided.
Drawings
FIG. 1 is a flow chart of a hole filling method according to an embodiment of the present invention;
FIG. 2 is a flow chart of the main fill phase in an embodiment of the present invention;
FIG. 3 is a flow chart of a first main fill step in an embodiment of the present invention;
FIG. 4 is a flow chart of the pre-fill phase in an embodiment of the present invention;
FIG. 5 is a flow chart of a first pre-fill step in an embodiment of the present invention;
fig. 6 is another flowchart of a hole filling method according to an embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the hole filling method provided by the present invention is described in detail below with reference to the accompanying drawings.
Example one
Fig. 1 is a first flowchart of a hole filling method according to an embodiment of the present invention, where the hole filling method includes: a pre-fill phase B and a main fill phase M following the pre-fill phase.
The pre-fill phase B comprises: a first pre-fill step, carried out for a first predetermined time, to deposit a reactant in the hole to be filled; a second pre-fill step is continued for a second predetermined time to etch the deposited reactants in the holes to be filled.
The main filling phase M comprises: continuing the first main filling step for a third predetermined time to deposit a reactant in the hole to be filled; and continuing to perform a second main filling step for a fourth preset time so as to etch the deposition reactant in the hole to be filled.
Specifically, the first predetermined time, the second predetermined time, the third predetermined time and the fourth predetermined time can be set according to process requirements, and generally the sum of the third predetermined time and the fourth predetermined time is greater than the sum of the first predetermined time and the second predetermined time.
According to the hole filling method provided by the embodiment of the invention, the whole filling process is divided into the pre-filling stage and the main filling stage, so that the time for depositing reactants in a single time is reduced, etching is carried out after deposition in the pre-filling stage, accumulation of particles on the top of an opening in the deposition stage is avoided, and the subsequent main filling stage is ensured to be smoothly carried out. Further, larger protrusions due to particle accumulation on the top of the opening due to one-time long-time deposition are also avoided.
In order to ensure that the opening is large when the hole is filled, the invention provides a hole filling method, as shown in fig. 2, which is a flow chart of a main filling stage in the embodiment of the invention, wherein the main filling stage M includes: a first main filling step S1 lasting for a third predetermined time and a second main filling step S2 lasting for a fourth predetermined time.
Specifically, the first main filling step S1: and introducing process gas into the reaction chamber, starting the direct current power supply and the radio frequency power supply, and loading direct current power and radio frequency power to the target material and the base respectively.
In an embodiment of the present invention, by performing the first main filling step for the third predetermined time, a reactant may be deposited in the hole to be filled.
Second main filling step S2: keeping the direct current power supply and the radio frequency power supply in an on state, and adjusting the radio frequency power.
In the embodiment of the invention, by implementing the second main filling step at the fourth preset time, the hole to be filled can be filled for the second time by etching and depositing the reactant.
Specifically, adjusting the magnitude of the radio frequency power further includes:
and increasing the radio frequency power from the first radio frequency power value to a second radio frequency power value. The first rf power value and the second rf power value may be actually adjusted according to actual process requirements, for example, in an embodiment, the first rf power value is 50-200W, and the second rf power value is 800-. By increasing the radio frequency power from the first radio frequency power value to the second radio frequency power value, the generation of plasma can be maintained under the conditions of high direct current power and high radio frequency power, and the bottom of the deep hole can be effectively etched, so that the normal operation of subsequent deposition etching can be effectively ensured.
The hole filling method provided by the embodiment of the invention comprises the following main filling stage: and after the first main filling step is finished, the second main filling step keeps the direct-current power supply and the radio-frequency power supply in the first main filling step in an on state and adjusts the radio-frequency power. In the present application, the second main filling step may act like a ramp, and after the rf power is adjusted, it may be easier to obtain a sustained and stable plasma than the secondary ignition process, and during the hole filling process, the protruding portion at the opening formed by the particle deposition is not yet fully densified, and is easier to etch away after the rf power is adjusted, thereby increasing the hole opening.
Further, fig. 3 is a flowchart illustrating a first main filling step in the embodiment of the present invention. The first main filling step S1, further includes: a main ignition phase S11 and a main deposition phase S12.
Specifically, the main ignition stage S11: and introducing process gas into the reaction chamber, starting a direct current power supply, wherein the direct current power loaded to the target by the direct current power supply is the first direct current power value so as to realize plasma glow starting.
Main deposition phase S12: and stopping introducing the process gas into the reaction chamber, and increasing the direct current power to a second direct current power value so that the plasma bombards the target to generate a reactant, and simultaneously starting the radio frequency power supply.
Specifically, the first dc power value and the second dc power value may be actually adjusted according to actual process requirements, for example, in an embodiment, the first dc power value is 1000W, and the second dc power value is 30000-.
In the hole filling method provided in the embodiment of the present invention, the first main filling step includes: the main deposition stage, the DC power is increased from the first DC power value to the second DC power value directly, so as to maintain the generation of plasma and provide stable plasma for the first main filling step.
Specifically, to avoid the formation of large protrusions during hole filling, fig. 4 shows a flow chart of a pre-filling phase in an embodiment of the invention, the pre-filling phase preceding the main filling phase, the pre-filling phase comprising: a first pre-fill step 101 lasting a first predetermined time and a second pre-fill step 102 lasting a second predetermined time.
A first pre-filling step 101: and introducing process gas into the reaction chamber, starting the direct current power supply and the radio frequency power supply, and loading direct current power and radio frequency power to the target material and the base respectively.
In an embodiment of the invention, the reactant may be deposited in the well to be filled by performing a first pre-fill step for a first predetermined time.
Second pre-fill step 102: keeping the direct current power supply and the radio frequency power supply in an on state, and adjusting the radio frequency power.
In an embodiment of the invention, by performing the second pre-fill step for the second predetermined time, the hole to be filled may be filled a second time by etching the deposition reactant.
The pre-filling stage provided by the embodiment of the invention can avoid a larger protruding part caused by particle accumulation on the top of the hole opening due to one-time long-time deposition, and further can avoid influencing the subsequent electroplating process. Meanwhile, although the hole filling is divided into the pre-filling stage and the main filling stage, the total time of deposition and etching can be unchanged, thereby ensuring the thickness and coverage rate of the filled film.
As shown in fig. 5, the first pre-filling step 101, which is provided for the embodiment of the present invention, further includes: a pre-ignition phase 1011 and a pre-deposition phase T12.
Specifically, the pre-ignition phase 1011: and introducing process gas into the reaction chamber, starting a direct current power supply, wherein the direct current power loaded to the target by the direct current power supply is the first direct current power value so as to realize plasma glow starting.
Pre-deposition phase 1012: and stopping introducing the process gas into the reaction chamber, and increasing the direct current power to a second direct current power value so that the plasma bombards the target to generate a reactant, and simultaneously starting the radio frequency power supply.
In the hole filling method provided in the embodiment of the present invention, the first pre-filling step includes: the method comprises a pre-starting stage and a pre-deposition stage, wherein in the pre-deposition stage, the direct current power is directly increased from a first direct current power value to a second direct current power value, so that the generation of plasma is maintained, and stable plasma is provided for the first main filling step.
In particular, the invention provides embodiments wherein the filling time of the pre-filling phase is shorter than the filling time of the main filling phase, that is to say the first predetermined time is shorter than the third predetermined time. Specifically, the filling time of the pre-filling stage and the filling time of the main filling stage can be adjusted according to the process requirements of the actual product. In the step of pre-filling the hole, a deposition process is carried out for a short time, and then etching is carried out for a corresponding time, so that accumulation of particles on the top of the opening in the deposition stage can be avoided, and subsequent secondary filling preparation is guaranteed to be carried out smoothly. And after the pre-hole filling process is finished and the air pressure in the cavity is stable, performing a main hole filling stage.
Further, in another embodiment of the present invention, the duration of the main deposition phase is three times the duration of the pre-deposition phase. The time length of the main deposition phase and the pre-deposition phase can be selected differently according to the process requirements of actual products, for example, the time length of the pre-deposition phase is preferably 5s, and the time length of the main deposition phase is preferably 15 s.
Further, in another embodiment of the present invention, the fourth predetermined time is three times the second predetermined time. The second main filling step and the second pre-filling step may be selected to have different time lengths according to the process requirements of the actual product, for example, the second predetermined time is 2.5s, and the fourth predetermined time is 7.5 s.
In summary, the hole filling method provided by the invention has the advantages that the pre-filling stage and the main filling stage are carried out step by step, in the two processes, the deposition process and the etching process are continuously carried out, and the top opening of the sample obtained after the hole is filled by the method is larger than that obtained by the method in the first technical scheme, so that the subsequent electroplating process is ensured to be smoothly carried out.
Example two
In order to avoid overheating of the filling process of the hole to be deposited and to reduce the temperature of the hole to be filled, the present invention further provides a hole filling method, as shown in fig. 6, which is another flow chart of the hole filling method provided in the embodiment of the present invention, in which back-blowing gas is introduced into the pedestals in the pre-filling stage and the main filling stage. The flow rate of the back-blowing gas is determined according to the process requirements of the actual product, for example, the flow rate of the back-blowing gas is 2-10 sccm.
Specifically, the hole filling method comprises the following steps:
the first pre-fill step 201: and introducing process gas into the reaction chamber and back-blowing gas into the base, starting the direct current power supply and the radio frequency power supply, and loading direct current power and radio frequency power to the target and the base respectively so as to deposit reactants in the hole to be filled. Wherein the first pre-filling step is continued for a first predetermined time.
Second pre-fill step 202: keeping the back blowing gas and the direct current power supply and the radio frequency power supply in the on state, and adjusting the radio frequency power so as to carry out secondary filling on the hole to be filled by etching and depositing reactants. Wherein the second pre-filling step is continued for a second predetermined time.
First main filling step 203: and keeping introducing back-blowing gas to introduce process gas into the reaction chamber, starting the direct current power supply and the radio frequency power supply, and loading direct current power and radio frequency power to the target material and the base respectively to deposit reactants in the hole to be filled. Wherein the first main filling step is continued for a third predetermined time.
Second main filling step 204: keeping the back blowing gas and the direct current power supply and the radio frequency power supply in the on state, and adjusting the radio frequency power so as to carry out secondary filling on the hole to be filled by etching and depositing reactants. Wherein the second main filling step is continued for a fourth predetermined time.
It should be noted that, in the embodiment of the present invention, after the second pre-filling step 202 is performed, the loading of the dc power source and the rf power source needs to be stopped, so that the process gas can be re-introduced into the reaction chamber in the first main filling step 203; however, in each step, the back blowing gas is not stopped to be introduced, and the flow rate of the back blowing gas in each stage may be different, for example, before hole filling, the flow rate of the back blowing gas is 10sccm, and the flow rate of the back blowing gas is 4sccm during hole filling, so that the chamber is conveniently purged.
According to the hole filling method provided by the embodiment of the invention, the back blowing gas is introduced at each filling stage and before hole filling, so that the cleanness of the reaction chamber can be guaranteed, and the temperature of the substrate can be reduced. Furthermore, the hole filling method provided by the invention can also be used for preparing materials such as Cu, Ta, Al and the like.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (11)
1. A hole filling method comprising a pre-fill phase and a main fill phase following the pre-fill phase;
the pre-fill phase comprises: a first pre-fill step, carried out for a first predetermined time, to deposit a reactant in the hole to be filled;
continuing a second pre-fill step for a second predetermined time to etch the deposition reactant in the hole to be filled;
the main filling phase comprises: continuing a first main filling step for a third predetermined time to deposit a reactant in the hole to be filled;
and continuing to perform a second main filling step for a fourth preset time so as to etch the deposition reactant in the hole to be filled.
2. The hole filling method according to claim 1,
the first main filling step comprises the steps of introducing process gas into the reaction chamber, starting the direct current power supply and the radio frequency power supply, and loading direct current power and radio frequency power to the target and the base respectively;
and the second main filling step comprises the steps of keeping the direct current power supply and the radio frequency power supply in an opening state and adjusting the radio frequency power.
3. The hole filling method according to claim 1,
the first pre-filling step comprises the steps of introducing process gas into the reaction chamber, starting a direct current power supply and a radio frequency power supply, and loading direct current power and radio frequency power to the target and the base respectively;
the second pre-filling step includes keeping the dc power supply and the rf power supply in an on state and adjusting the rf power.
4. The well filling method of claim 3, wherein the first predetermined time of the pre-fill phase is shorter than the third predetermined time of the main fill phase.
5. The well filling method of claim 4, wherein the first pre-filling step further comprises:
in the pre-glow starting stage, the process gas is introduced into the reaction chamber, the direct-current power supply is started, and the magnitude of the direct-current power loaded to the target by the direct-current power supply is a first direct-current power value so as to realize plasma glow starting;
and in the pre-deposition stage, stopping introducing the process gas into the reaction chamber, and increasing the direct current power to a second direct current power value so that the plasma bombards the target to generate the reactant, and simultaneously turning on the radio frequency power supply.
6. The hole filling method according to claim 5, wherein the first main filling step further comprises:
in the main glow starting stage, the process gas is introduced into the reaction chamber, the direct-current power supply is started, and the direct-current power loaded to the target by the direct-current power supply is the first direct-current power value so as to realize plasma glow starting;
and in the main deposition stage, stopping introducing the process gas into the reaction chamber, and increasing the direct current power to the second direct current power value so that the plasma bombards the target to generate the reactant, and simultaneously turning on the radio frequency power supply.
7. The hole filling method according to claim 6, wherein the duration of the main deposition phase is three times the duration of the pre-deposition phase.
8. The hole-filling method according to any one of claims 1 to 7, wherein the fourth predetermined time is three times the second predetermined time.
9. The hole filling method of any one of claims 2-7, wherein said adjusting the magnitude of said radio frequency power further comprises:
and increasing the radio frequency power from a first radio frequency power value to a second radio frequency power value.
10. The hole filling method according to any one of claims 5 to 6, wherein the first DC power value is 1000W, and the second DC power value is 30000 and 40000W.
11. The hole filling method as claimed in claim 9, wherein the first RF power is 50-200W and the second RF power is 800-1500W.
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| CN201910185473.6A CN111696913A (en) | 2019-03-12 | 2019-03-12 | Hole filling method |
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| CN201910185473.6A CN111696913A (en) | 2019-03-12 | 2019-03-12 | Hole filling method |
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| US20070275560A1 (en) * | 2006-02-22 | 2007-11-29 | Eiichi Nishimura | Method of manufacturing semiconductor device |
| CN102693931A (en) * | 2011-03-23 | 2012-09-26 | 中国科学院微电子研究所 | Thin film filling method |
| CN103628075A (en) * | 2012-08-23 | 2014-03-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma etching method |
| CN104752330A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Silicon through hole deep-hole filling process |
| CN107895710A (en) * | 2017-11-30 | 2018-04-10 | 长江存储科技有限责任公司 | The copper fill process of via hole |
| CN107993980A (en) * | 2017-11-27 | 2018-05-04 | 长江存储科技有限责任公司 | The method that directs study of copper fill process is carried out to groove and hole |
-
2019
- 2019-03-12 CN CN201910185473.6A patent/CN111696913A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070275560A1 (en) * | 2006-02-22 | 2007-11-29 | Eiichi Nishimura | Method of manufacturing semiconductor device |
| CN102693931A (en) * | 2011-03-23 | 2012-09-26 | 中国科学院微电子研究所 | Thin film filling method |
| CN103628075A (en) * | 2012-08-23 | 2014-03-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma etching method |
| CN104752330A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Silicon through hole deep-hole filling process |
| CN107993980A (en) * | 2017-11-27 | 2018-05-04 | 长江存储科技有限责任公司 | The method that directs study of copper fill process is carried out to groove and hole |
| CN107895710A (en) * | 2017-11-30 | 2018-04-10 | 长江存储科技有限责任公司 | The copper fill process of via hole |
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