CN111673271A

CN111673271A - Method for preparing nanobelt by femtosecond laser

Info

Publication number: CN111673271A
Application number: CN202010547908.XA
Authority: CN
Inventors: 赵全忠
Original assignee: Nanjing Huizhi Laser Applied Technology Research Institute Co ltd
Current assignee: Nanjing Huizhi Laser Applied Technology Research Institute Co ltd
Priority date: 2020-06-16
Filing date: 2020-06-16
Publication date: 2020-09-18

Abstract

The invention discloses a method for preparing a nanobelt by femtosecond laser, which comprises the following steps: firstly, depositing a layer of film to be processed on a substrate; a second step of placing the substrate on which the thin film is deposited on a movable table; thirdly, adjusting the energy of the single femtosecond laser to the ablation threshold of the thin film material; and fourthly, focusing the femtosecond laser on the surface of the film through an objective lens, moving the workbench, and enabling the femtosecond laser to scan the surface of the film according to preset parameters, so that the scanned area is ablated, and the non-scanned area is stripped to form a nanobelt. The nanobelt preparation method provided by the invention overcomes the defect of single shape of the nanobelt prepared by the traditional method, utilizes the flexible three-dimensional processing characteristic of the femtosecond laser, ablates the film through the cold processing characteristic of the femtosecond laser, and can prepare the nanobelt with any preset shape according to a program.

Description

Method for preparing nanobelt by femtosecond laser

Technical Field

The invention relates to a preparation method of a nano device, in particular to a method for preparing a nanobelt by using femtosecond laser.

Background

The one-dimensional nano structure has attracted wide attention due to the great application prospect in the fields of electronics, optoelectronics, electrochemistry and the like. Among them, nanowires, nanorods, and nanotubes have been studied more. Nanobelts, a new one-dimensional nanostructure, have recently attracted considerable interest in the nanocology community. The nanobelts can help people to develop understanding of structure-performance relation in the solid and can be used for manufacturing corresponding functional devices, such as micro-cantilevers of atomic force microscopes and scanning probe microscopes by using the nanobelts in Hughes et al (appl. Phys. Lett.,82,2886 (2003)). The nanobelt is generally prepared by vapor deposition (Science,291,1947(2001)), template synthesis (chem. mater.,14,1445, (2002)), hydrothermal growth, and the like. The methods all relate to multi-step process flows and have the defects of long preparation time and high preparation cost. In addition, the nanobelts prepared by the method are limited by the film growth conditions in the preparation process, the nanobelts are single in shape, the preparation of the nanobelts with different shapes is difficult to realize, and in actual use, special requirements are often made on the shape of the nanobelts, for example, the front end of a micro-cantilever of a scanning probe microscope needs to be in an arrow shape.

Femtosecond (10)^-15Second) laser precision micromachining is an extremely attractive leading research direction in laser and photoelectron industries in the world today. The femtosecond laser pulse can interact with the material in an extremely short time domain with extremely high peak power, can inject energy into a laser irradiation part extremely quickly, and can improve the processing precision even for a metal material with rapid thermal diffusion. The femtosecond laser direct writing technology has the advantages of simple process, flexible operation and the like and is widely applied to the fields of micro-nano structures and device preparation.

However, according to the search of the inventor, no technical disclosure of using the femtosecond laser for processing the nanobelt exists at present.

Disclosure of Invention

The purpose of the invention is as follows: aiming at the problems and the defects in the prior art, the invention provides the nanobelt preparation method which is simple and easy to implement, flexible in shape control and reliable in process.

The technical scheme is as follows: a method for preparing a nanobelt by using femtosecond laser is characterized by comprising the following steps:

firstly, depositing a layer of film to be processed on a substrate;

a second step of placing the substrate on which the thin film is deposited on a movable table;

thirdly, adjusting the energy of the single femtosecond laser to the ablation threshold of the thin film material;

and fourthly, focusing the femtosecond laser on the surface of the film through an objective lens, moving the workbench, and enabling the femtosecond laser to scan the surface of the film according to preset parameters, so that the scanned area is ablated, and the non-scanned area is stripped to form a nanobelt.

Preferably, the non-scanned region is a nanobelt having a preset shape or width.

Preferably, the substrate is glass or a semiconductor.

Preferably, the thin film is a metal film, a semiconductor film, or a dielectric film.

Preferably, the thickness of the film to be processed is 10-100 nm.

Preferably, the parameters of the femtosecond laser are as follows: the pulse width is 1-1000 fs, the wavelength is 200-2100 nm, and the repetition frequency is 1-1 MHz.

Has the advantages that: compared with the prior art, the nanobelt preparation method provided by the invention overcomes the defect of single shape of the nanobelt prepared by the traditional method, and can prepare the nanobelt with any shape preset according to a program by utilizing the flexible three-dimensional processing characteristic of the femtosecond laser and ablating the film through the cold processing characteristic of the femtosecond laser. The invention can realize the preparation of nanobelts with different widths and different shapes by adopting different focusing objectives and changing related laser parameters. Compared with the traditional methods of vapor deposition, template synthesis, hydrothermal growth and the like, the method for preparing the nanobelt has the characteristics of simple process steps, high processing efficiency, wide applicable film materials, easy control of the shape of the nanobelt and the like.

Drawings

FIG. 1 is a schematic view of the present invention for preparing nanoribbons using a single femtosecond laser;

FIG. 2 is a micrograph of a nanobelt prepared by the method of the present invention.

Detailed Description

The invention is further elucidated with reference to the drawings and the embodiments.

Example 1:

this example provides a method for preparing nanoribbons using a femtosecond laser, as shown in fig. 1: the method comprises the following steps:

firstly, depositing a layer of gold film 3 to be processed on a quartz glass substrate 4;

secondly, placing the substrate deposited with the gold film 3 on a movable workbench;

thirdly, adjusting the energy of a single beam femtosecond laser 1 with the repetition frequency of 1kHz, the wavelength of 800nm, the pulse width of 120fs and the power of 10mW to the ablation threshold value of 0.15J/cm of the gold film material²；

Fourthly, focusing the femtosecond laser 1 on the surface of the film through a microscope objective lens 2, moving the three-dimensional worktable according to a set program, enabling the femtosecond laser to scan the surface of the film according to preset parameters, so that the scanned area is ablated, and the non-scanned area is stripped to form a nano-belt 5 with a required shape or width, as shown in fig. 2.

Example 2:

the preparation method of this example is substantially the same as that of example 1, except that in this example, a copper thin film deposited on quartz glass is placed on a three-dimensional platform controlled by a computer, a femtosecond laser 1 with a repetition frequency of 250kHz, a wavelength of 800nm, a pulse width of 30fs and a power of 50mW is focused on the surface of the copper thin film through a microscope objective 2, the three-dimensional platform is moved according to a set program, and finally, a copper nanobelt is formed on the surface of a sample.

Example 3:

the manufacturing method of this example is substantially the same as that of example 1, except that in this example, a silicon thin film deposited on quartz glass is placed on a three-dimensional stage controlled by a computer, a femtosecond laser 1 with a repetition frequency of 500kHz, a wavelength of 1030nm, a pulse width of 1000fs, and a power of 100mW is focused on the surface of the silicon film through a microscope objective 2, and the three-dimensional stage is moved according to a set program, thereby finally forming a silicon nanobelt on the surface of a sample.

The foregoing is only a preferred embodiment of this invention and it should be noted that modifications can be made by those skilled in the art without departing from the principle of the invention and these modifications should also be considered as the protection scope of the invention.

Claims

1. A method for preparing a nanobelt by using femtosecond laser is characterized by comprising the following steps:

firstly, depositing a layer of film to be processed on a substrate;

2. The method of preparing nanoribbons using a femtosecond laser according to claim 1, wherein the non-scanned region is nanoribbons of a predetermined shape or width.

3. The method for preparing nanoribbons by using a femtosecond laser according to claim 1, wherein the substrate is glass or a semiconductor.

4. The method of claim 1, wherein the thin film is a metal film, a semiconductor film, or a dielectric film.

5. The method of claim 4, wherein the thickness of the thin film to be processed is 10 to 100 nm.

6. The method for preparing nanoribbons by using a femtosecond laser according to any one of claims 1 to 5, wherein the parameters of the femtosecond laser are as follows: the pulse width is 1-1000 fs, the wavelength is 200-2100 nm, and the repetition frequency is 1-1 MHz.