CN111624710B - Waveguide device and method of forming the same - Google Patents
Waveguide device and method of forming the same Download PDFInfo
- Publication number
- CN111624710B CN111624710B CN202010344128.5A CN202010344128A CN111624710B CN 111624710 B CN111624710 B CN 111624710B CN 202010344128 A CN202010344128 A CN 202010344128A CN 111624710 B CN111624710 B CN 111624710B
- Authority
- CN
- China
- Prior art keywords
- waveguide
- mask
- sub
- layer
- waveguide structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention relates to a waveguide device and a method of forming the same. The forming method of the waveguide device comprises the following steps: providing a substrate with a waveguide core layer; forming a patterned mask layer on the surface of the waveguide core layer, wherein the patterned mask layer comprises a plurality of sub-masks and openings positioned between the adjacent sub-masks; performing a plurality of the following cycling steps to form a plurality of waveguide structures, the cycling steps comprising: selecting a sub-mask as a target sub-mask; and shielding other sub-masks except the target sub-mask, and etching along the opening adjacent to the target sub-mask to form a waveguide structure. The invention is beneficial to stabilizing the side wall appearance of the waveguide, reducing the transmission loss of the waveguide, and simultaneously is beneficial to controlling the etching depth of the ridge waveguide, thereby obtaining stable grating, modulator and detector structures.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a waveguide device and a forming method thereof.
Background
The existing waveguide structures include a strip waveguide structure and a ridge waveguide structure, and in order to meet the needs of various optical devices, the strip waveguide structure and the ridge waveguide structure are generally required to be formed simultaneously in the process of forming the waveguide structure, and a plurality of ridge waveguide structures with different etching depths may be required to be formed. However, the current process for forming waveguides comprising a plurality of different structures is complex, and the sidewall morphology of the stripe waveguide structure and the etching depth of the ridge waveguide are difficult to control.
For example, when forming a ridge waveguide structure having one stripe waveguide structure and two different depths (e.g., a shallow etched ridge waveguide and a deep etched ridge waveguide), there are generally two methods: the first method is that a mask layer is deposited on the surface of a waveguide core layer, a strip-shaped waveguide structure, a shallow etching ridge-shaped waveguide structure and a deep etching ridge-shaped waveguide structure are sequentially formed through three times of photoetching/etching, and the mask layer and the waveguide core layer are required to be etched in each etching process; the second method is to deposit a mask layer on the surface of the waveguide core layer, and form a shallow etching ridge waveguide structure, a deep etching ridge waveguide structure and a strip waveguide structure in turn by three times of photoetching/etching, namely, etching the mask layer and the waveguide core layer to form the shallow etching ridge waveguide structure, and photoetching and etching the deep etching ridge waveguide structure and the strip waveguide structure on the basis of the shallow etching. However, in the first method, the mask layer and the waveguide core layer are required to be etched each time, the etching process is complex, and the etching depths of shallow etching and deep etching are difficult to accurately control; in the second method, the waveguide core layer is etched twice or three times for forming the strip waveguide, and the sidewall morphology and roughness of the strip waveguide are difficult to control.
Therefore, how to reduce the manufacturing complexity of waveguide devices with various waveguide structures, reduce waveguide transmission loss, and obtain devices such as gratings, modulators, detectors, etc. with stable performance is a technical problem to be solved at present.
Disclosure of Invention
The waveguide device and the forming method thereof provided by the invention are used for solving the problem of higher manufacturing complexity of the waveguide device with various waveguide structures in the prior art, so as to ensure the appearance of the waveguide structure, reduce the waveguide transmission loss and reach devices such as gratings, modulators, detectors and the like with stable performance.
In order to solve the above problems, the present invention provides a method for forming a waveguide device, comprising the steps of:
providing a substrate with a waveguide core layer;
forming a patterned mask layer on the surface of the waveguide core layer, wherein the patterned mask layer comprises a plurality of sub-masks and openings positioned between the adjacent sub-masks;
performing a plurality of the following looping steps to form a plurality of waveguide structures, the looping steps comprising:
selecting a sub-mask as a target sub-mask;
and shielding other sub-masks except the target sub-mask, and etching the waveguide core layer along the opening adjacent to the target sub-mask to form a waveguide structure.
Optionally, the specific step of forming a patterned mask layer on the surface of the waveguide core layer includes:
depositing a mask material on the surface of the waveguide core layer to form a mask layer;
and etching the mask layer to form a plurality of sub-masks penetrating through the mask layer along the direction vertical to the substrate and openings which are positioned between the adjacent sub-masks and penetrate through the mask layer along the direction vertical to the substrate.
Optionally, before depositing the mask material on the surface of the waveguide core layer, the method further includes the following steps:
and forming a buffer layer on the surface of the waveguide core layer.
Optionally, the patterned mask layer includes a first sub-mask, a second sub-mask, and a first opening located between the first sub-mask and the second sub-mask, and the waveguide structure includes a first waveguide structure and a second waveguide structure; further comprising:
a first circulation step:
selecting the first sub-mask as a target sub-mask;
shielding the second sub-mask, and etching the waveguide core layer along the first opening to form a first waveguide structure;
and a second circulation step:
selecting the second sub-mask as a target sub-mask;
and shielding the first sub-mask and the first waveguide structure, and etching the waveguide core layer except the first waveguide structure along the first opening to form a second waveguide structure.
Optionally, the first waveguide structure is a strip waveguide structure; the specific steps for forming the first waveguide structure include:
forming a first shielding layer for coating the second sub-mask;
and etching the waveguide core layer along the first opening until the waveguide core layer penetrates through the waveguide core layer.
Optionally, the specific step of shielding the first sub-mask and the first waveguide structure includes:
and forming a second shielding layer which covers the first sub-mask and covers the side wall of the first waveguide structure.
Optionally, the second waveguide structure is a ridge waveguide structure; the specific step of etching the waveguide core layer except the first waveguide structure along the first opening includes:
and etching the waveguide core layer along the first opening to a first preset depth.
Optionally, the patterned mask layer further includes a third sub-mask and a second opening located between the third sub-mask and the second sub-mask and penetrating through the patterned mask layer; the first shielding layer covers the second sub-mask and the third sub-mask, and the second shielding layer covers the first sub-mask and the third sub-mask and covers the side wall of the first waveguide structure; after the second waveguide structure is formed, the method further comprises the following steps:
and a third circulation step:
selecting the third sub-mask as a target sub-mask;
and shielding the first sub-mask, the second sub-mask, the first waveguide structure and the second waveguide structure, and etching the waveguide core layer except the first waveguide structure and the second waveguide structure along the second opening to form a third waveguide structure.
Optionally, the third waveguide structure is a ridge waveguide structure; the specific step of etching the waveguide core layer along the second opening except for the first waveguide structure and the second waveguide structure includes:
and etching the waveguide core layer except the first waveguide structure and the second waveguide structure to a second preset depth along the second opening, wherein the second preset depth is different from the first preset depth.
Optionally, the substrate includes bottom silicon, a buried insulating layer covering a surface of the bottom silicon, and top silicon covering a surface of the buried insulating layer, where the top silicon is used as the waveguide core layer.
Optionally, after the second waveguide structure is formed, the method further includes the following steps:
and removing the patterned mask layer and forming an upper cladding which covers the plurality of waveguide structures and fills gaps between the adjacent waveguide structures.
Optionally, the specific steps of removing the patterned mask layer and forming the upper cladding layer include:
depositing a first cladding material which covers the surfaces of the plurality of waveguide structures, the side walls of the patterned mask layer and fills gaps between the adjacent waveguide structures;
removing the patterned mask layer to expose the plurality of waveguide structures;
depositing a second cladding material on the exposed plurality of waveguide structure surfaces and the first cladding material surface to form an upper cladding comprising the first cladding material and the second cladding material.
In order to solve the above problems, the present invention also provides a waveguide device including:
a substrate;
a plurality of waveguide structures located on the surface of the substrate, wherein the plurality of waveguide structures are formed by using the method for forming the waveguide device according to any one of the above items.
According to the waveguide device and the forming method thereof, in the process of forming the waveguide structure, other sub-masks corresponding to other waveguide areas are covered, so that other sub-masks are not required to be etched in the process of forming the waveguide structure. The invention forms the mask layer required by waveguide etching by one-time etching, avoids multiple etching of the mask layer, and finally forms the required strip waveguide and/or ridge waveguides with different depths by one-time etching of the waveguide core layer, thereby being beneficial to stabilizing the side wall appearance of the waveguide, reducing the transmission loss of the waveguide, simultaneously being beneficial to controlling the etching depth of the ridge waveguide and obtaining the structures of the grating, the modulator, the detector and the like with stable performance.
Drawings
FIG. 1 is a flow chart of a method of forming a waveguide device in accordance with an embodiment of the present invention;
fig. 2A-2M are schematic cross-sectional views of the principal processes of an embodiment of the present invention in forming a waveguide device.
Detailed Description
The following describes in detail a specific embodiment of a waveguide device and a method for forming the same according to the present invention with reference to the accompanying drawings.
The present embodiment provides a method for forming a waveguide device, fig. 1 is a flowchart of a method for forming a waveguide device according to the present embodiment, and fig. 2A to 2M are schematic cross-sectional views of main processes in a process for forming a waveguide device according to the present embodiment. As shown in fig. 1 and fig. 2A to fig. 2M, the method for forming a waveguide device according to this embodiment includes the following steps:
step S11, a substrate with a waveguide core 22 is provided, as shown in fig. 2A.
Optionally, the substrate includes a bottom silicon layer 20, an insulating buried layer 21 covering the surface of the bottom silicon layer 20, and a top silicon layer covering the surface of the insulating buried layer 21, where the top silicon layer is used as the waveguide core layer 22. The buried insulating layer 21 may serve as a lower cladding layer of the waveguide device to be formed later.
Specifically, the substrate may be an SOI substrate in which the top layer silicon serves as the waveguide core layer 22. Other materials may be used to form the waveguide core 22, such as silicon nitride, and the present embodiment is not limited thereto.
Step S12, forming a patterned mask layer on the surface of the waveguide core layer 22, where the patterned mask layer includes a plurality of sub-masks and openings located between adjacent sub-masks, as shown in fig. 2B.
Optionally, the specific step of forming a patterned mask layer on the surface of the waveguide core layer 22 includes:
depositing a mask material on the surface of the waveguide core layer 22 to form a mask layer 24;
the mask layer 24 is etched to form a plurality of sub-masks and openings located between the adjacent sub-masks and penetrating the mask layer in a direction perpendicular to the substrate, as shown in fig. 2B.
Optionally, before depositing the mask material on the surface of the waveguide core layer 22, the method further includes the following steps:
a buffer layer 23 is formed on the surface of the waveguide core layer 22.
The patterned mask layer includes a first sub-mask 241, a second sub-mask 242, and a first opening 251 located between the first sub-mask 241 and the second sub-mask 242. Specifically, the buffer layer 23 may be formed on the surface of the waveguide core layer 22 by using a chemical vapor deposition process, an atomic layer deposition process, or a furnace tube oxidation process, so as to avoid damage to the waveguide core layer 22 in the process of patterning the mask layer 24 by using an etching process. The buffer layer 23 may be made of the same material as the buried insulating layer 21, for example, an oxide material (e.g., silicon dioxide). Then, a mask material is deposited on the surface of the buffer layer 23 to form the mask layer 24. The mask material may be a hard mask material such as silicon nitride, or an organic mask material, and those skilled in the art can select the mask material according to actual needs. And then, etching the mask layer 24 by adopting a dry etching process to form the patterned mask layer. As shown in fig. 2B, the patterned mask layer includes an opening 251 penetrating through the mask layer 24 in a direction perpendicular to the substrate, and the first sub-mask 241 and the second sub-mask 242 located at two opposite sides of the first opening 251. Wherein the first sub-mask 241 corresponds to a first waveguide core region of the waveguide core 22 for forming a first waveguide structure, and the second sub-mask 242 corresponds to a second waveguide core region of the waveguide core 22 for forming a second waveguide structure. That is, the mask layer 24 is etched to form a plurality of sub-masks corresponding to a plurality of waveguide core layer regions in the waveguide core layer 22, where the plurality of waveguide core layer regions are used to form a plurality of waveguide structures. For example, the patterned mask layer shown in fig. 2B includes a first sub-mask 241, a second sub-mask 242, and a third sub-mask 243, and a second opening 252 penetrating through the mask layer along a direction perpendicular to the substrate is used to isolate the second sub-mask 242 and the third sub-mask 243. The plurality in the present embodiment means two or more.
Performing a plurality of the following cycling steps to form a plurality of waveguide structures, the cycling steps comprising:
step S13, selecting a sub-mask as a target sub-mask;
step S14, shielding the other sub-masks except the target sub-mask, and etching the waveguide core layer 22 along the opening adjacent to the target sub-mask to form a waveguide structure.
Optionally, the patterned mask layer includes a first sub-mask 241, a second sub-mask 242, and a first opening 251 located between the first sub-mask 241 and the second sub-mask 242, and the waveguide structure includes a first waveguide structure 281 and a second waveguide structure 30; further comprising:
a first circulation step:
selecting the first sub-mask 241 as a target sub-mask;
shielding the second sub-mask 242, and etching the waveguide core layer 22 along the first opening 251 to form a first waveguide structure, as shown in fig. 2D;
and a second circulation step:
selecting the second sub-mask as a target sub-mask;
and shielding the first sub-mask and the first waveguide structure, and etching the waveguide core layer except the first waveguide structure along the first opening to form a second waveguide structure, as shown in fig. 2G.
Optionally, the first waveguide structure 281 is a stripe waveguide structure; the specific steps of forming the first waveguide structure 281 include:
forming a first shielding layer 26 covering the second sub-mask 242;
the waveguide core layer 22 is etched along the first opening 251 to penetrate through the waveguide core layer 22.
The first waveguide structure 281 is a stripe waveguide structure, and the patterned mask layer includes a first sub-mask 241, a second sub-mask 242, and a third sub-mask 243. Before forming the first waveguide structure 281, the first shielding layer 26 is formed covering the top surface (i.e., the surface of the second sub-mask 242 facing away from the waveguide core layer 22) and the sidewalls of the second sub-mask 242, and the top surface and the sidewalls of the third sub-mask 243 (i.e., covering the third sub-mask 243), as shown in fig. 2C. The first shielding layer 26 has an etching selectivity with respect to the waveguide core layer 22, so that the first shielding layer 26 is not damaged in the subsequent process of etching the waveguide core layer 22 to form the first waveguide structure 281, thereby avoiding re-etching the second sub-mask 242 and the third sub-mask 243 shielded by the first shielding layer 26. For example, the etch selectivity between the waveguide core layer 22 and the first shielding layer 26 is greater than 3. The material of the first shielding layer 26 may be, but is not limited to, a photoresist material.
The first shielding layer 26 may continuously cover the first sub-mask 242 and the third sub-mask 243, or the first shielding layer 26 covering the second sub-mask 242 and the first shielding layer 26 covering the third sub-mask 243 may be discontinuous (i.e., have a space therebetween). In this embodiment, in order to further simplify the subsequent process, the first shielding layer 26 covering the second sub-mask 242 and the first shielding layer 26 covering the third sub-mask 243 may be discontinuous, that is, the second opening 252 is not filled with the first shielding layer 26, and has a gap exposing the buffer layer 23, so that the second waveguide core layer region corresponding to the second sub-mask 242 and the third waveguide core layer region corresponding to the third sub-mask 243 can be separated during the etching process for forming the first waveguide structure 281. At this time, the sum of the thickness of the first shielding layer 26 covering the sidewall of the second sub-mask 242 facing the first sub-mask 241, the thickness of the first shielding layer 26 covering the sidewall of the second sub-mask 242 facing away from the first sub-mask 241 and the width of the second sub-mask 242 is greater than or equal to the width of the second waveguide structure to be formed subsequently, and is smaller than the width of the first opening 251, so as to avoid affecting the formation processes of the first waveguide structure and the second waveguide structure subsequently.
Next, using the buried insulating layer 21 as an etching stop layer, the buffer layer 23 and the waveguide core layer 22 are etched down along the remaining first opening 251 (i.e., the portion not covered by the first shielding layer 26) by using a dry etching process, so as to form the first waveguide structure 281. In this embodiment, the first waveguide structure 281 having a stripe waveguide structure is formed by one etching, so as to ensure the morphology and roughness of the sidewall of the first waveguide structure 281, which is helpful for reducing the transmission loss of the first waveguide structure 281.
In the above, the patterned mask layer includes three sub-masks, when the patterned mask layer includes more than three sub-masks, only one sub-mask corresponding to a region where a waveguide structure is formed needs to be exposed in each process of forming the waveguide structure, and the rest of the sub-masks may be covered.
Optionally, the specific steps of shielding the first sub-mask 241 and the first waveguide structure 281 include:
a second shielding layer 29 is formed to cover the first sub-mask 241 and cover the sidewalls of the first waveguide structure 281, as shown in fig. 2F.
Optionally, the second waveguide structure 29 is a ridge waveguide structure; the specific steps of etching the waveguide core layer 22 except the first waveguide structure 281 along the first opening 251 include:
the waveguide core layer 22 except the first waveguide structure 281 is etched along the first opening 251 to a first predetermined depth.
The second waveguide structure 29 is a ridge waveguide structure, and the patterned mask layer includes a first sub-mask 241, a second sub-mask 242, and a third sub-mask 243. First, the first shielding layer 26 is removed, and the structure shown in fig. 2E is obtained. After the first waveguide structure 281 is formed, the waveguide core layer 22 is divided into a portion for forming the first waveguide structure 281 and a remaining portion, and the buffer layer 23 is divided into a first sub-buffer layer 271 and a remaining portion on a surface of the first waveguide structure 281. Since the first shielding layer 26 is discontinuous, the remaining waveguide core layer 22 may be divided into a second initial waveguide structure 282 corresponding to the second sub-mask 242 and a third initial waveguide structure 283 corresponding to the third sub-mask 243, and the remaining buffer layer 23 may be divided into a second initial sub-buffer layer 272 corresponding to the second sub-mask 242 and a third initial sub-buffer layer 273 corresponding to the third sub-mask 243.
Thereafter, the second shielding layer 29 covering the first sub-mask 241, the first sub-buffer layer 271, the first waveguide structure 281, the third sub-mask 243, the third initial sub-buffer layer 273, and the third initial waveguide structure 283 is formed, as shown in fig. 2F. Next, a dry etching process is used to etch the second initial sub-buffer layer 272 and the second initial waveguide structure 282 down to the first predetermined depth along the remaining first opening 251 (i.e., the portion covering the second shielding layer 29), so as to form a second waveguide structure 30 and a second sub-buffer layer 31 on the surface of the second waveguide structure 30, as shown in fig. 2G. In the present embodiment, in the process of forming the second waveguide structure 30 having the first preset depth, other portions of the patterned mask layer are covered, so that on one hand, it is ensured that other subsequently formed waveguide structures are not affected, and on the other hand, it is convenient to accurately control the etching depth of the second waveguide structure 30.
Optionally, the patterned mask layer further includes a third sub-mask 243, and a second opening 252 located between the third sub-mask 243 and the second sub-mask 242 and penetrating through the patterned mask layer; the first shielding layer 26 covers the second sub-mask 242 and the third sub-mask 243, and the second shielding layer 29 covers the first sub-mask 241 and the third sub-mask 243 and covers the sidewall of the first waveguide structure 281; after forming the second waveguide structure 30, the following steps are included:
and a third circulation step:
selecting the third sub-mask 243 as a target sub-mask;
the first sub-mask 241, the second sub-mask 242, the first waveguide structure 281, and the second waveguide structure 30 are masked, and the waveguide core layer 22 except the first waveguide structure 281 and the second waveguide structure 30 is etched along the second opening 252 to form a third waveguide structure 33, as shown in fig. 2J.
Optionally, the third waveguide structure 33 is a ridge waveguide structure; the specific steps of etching the waveguide core layer 22 along the second opening 252 except for the first waveguide structure 281 and the second waveguide structure 30 include:
the waveguide core layer 22 except the first waveguide structure 281 and the second waveguide structure 30 is etched along the second opening 252 to a second predetermined depth, which is different from the first predetermined depth.
Specifically, after the second waveguide structure 30 is formed, the second shielding layer 29 is removed, resulting in the structure shown in fig. 2H. Thereafter, a third shielding layer 32 is formed to continuously cover the first sub-mask 241, the second sub-mask 242, the first sub-buffer layer 271, the second sub-buffer layer 31, the first waveguide structure 281, and the second waveguide structure 30, as shown in fig. 2I. Next, the third initial sub-buffer layer 273 and the third initial waveguide structure 283 are etched down to a second predetermined depth along the remaining second opening 252, so as to form a third waveguide structure 33 and a third sub-buffer layer 34 on the surface of the third waveguide structure 33, as shown in fig. 2J. The second preset depth may be greater than or less than the first preset depth.
In the process of forming any waveguide structure, the embodiment covers other formed waveguide structures and other patterned mask layer regions, so that only the waveguide core layer region corresponding to the preformed waveguide structure and the patterned mask layer region are exposed, and therefore, the etching parameters can be adjusted according to the requirement of the actually preformed waveguide structure, the influence on other waveguide structures or other regions of the patterned mask layer is not required to be considered, the patterned mask layer is not required to be etched for multiple times, the manufacturing flexibility of the waveguide device is improved, and the manufacturing process of the waveguide device is simplified.
The present embodiment is described by taking the example of sequentially forming the first waveguide structure 281, the second waveguide structure 30, and the third waveguide structure 33, and a person skilled in the art may adjust the forming order of the first waveguide structure 281, the second waveguide structure 30, and the third waveguide structure 33 according to actual needs, which is not limited in the present embodiment.
Optionally, after forming the plurality of waveguide structures, the method further includes the following steps:
and removing the patterned mask layer and forming an upper cladding which covers the plurality of waveguide structures and fills gaps between the adjacent waveguide structures.
Optionally, the specific steps of removing the patterned mask layer and forming the upper cladding layer include:
depositing a first cladding material 35 covering the surfaces of the plurality of waveguide structures, the sidewalls of the patterned mask layer, and filling gaps between adjacent waveguide structures;
removing the patterned mask layer to expose the plurality of waveguide structures;
depositing a second cladding material 36 on the exposed plurality of waveguide structure surfaces and the first cladding material 35 surface, forming an upper cladding comprising the first cladding material 35 and the second cladding material 36.
For example, after the third waveguide structure 33 is formed, the third shielding layer 32 is removed, as shown in fig. 2K, and a first cladding material 35 is deposited to cover the surface of the first waveguide structure 281, the surface of the second waveguide structure 30, the surface of the third waveguide structure 33, the surface of the patterned mask layer, and fill the gap between the first waveguide structure 281 and the second waveguide structure 30 and the gap between the second waveguide structure 30 and the third waveguide structure 33. The patterned mask layer is then exposed by a chemical mechanical polishing process, such as shown in fig. 2L. Next, a portion of the first cladding material 35 is etched, so that the top surface of the remaining first cladding material 35 is flush with the bottom surface of the patterned mask layer. The patterned masking layer is then stripped and a second cladding material 36 is deposited on the exposed surfaces of the first waveguide structure 281, the exposed surfaces of the second waveguide structure 30 and the first cladding material 35, forming an upper cladding layer comprising the first cladding material 35 and the second cladding material 36.
In this embodiment, the materials of the first cladding material 35, the second cladding material 36 and the buffer layer 23 may be the same, for example, all are oxide materials (such as silicon dioxide), so as to further simplify the formation process of the waveguide device. When the materials of the first cladding material 35, the second cladding material 36 and the buffer layer 23 are the same, the resulting structure is shown in fig. 2M.
Moreover, the present embodiment also provides a waveguide device. The structure of the waveguide device can be seen in fig. 2K and 2M. As shown in fig. 2K and 2M, the present embodiment provides a waveguide device including:
a substrate;
a plurality of waveguide structures located on the surface of the substrate, wherein the waveguide structures are formed by using the method for forming the waveguide device.
In the waveguide device and the method for forming the same according to the present embodiment, in the process of forming a waveguide structure, other sub-masks corresponding to other waveguide regions are covered, so that etching of other sub-masks is not required in the process of forming the first waveguide structure. The invention forms the mask layer required by waveguide etching by one-time etching, avoids multiple etching of the mask layer, and finally forms the required strip waveguide and/or ridge waveguides with different depths by one-time etching of the waveguide core layer, thereby being beneficial to stabilizing the side wall appearance of the waveguide, reducing the transmission loss of the waveguide, simultaneously being beneficial to controlling the etching depth of the ridge waveguide and obtaining the structures of the grating, the modulator, the detector and the like with stable performance.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (12)
1. A method of forming a waveguide device, comprising the steps of:
providing a substrate with a waveguide core layer;
forming a patterned mask layer on the surface of the waveguide core layer, wherein the patterned mask layer comprises a first sub-mask, a second sub-mask and a first opening between the first sub-mask and the second sub-mask;
performing a first circulation step and a second circulation step to form a plurality of waveguide structures, wherein the waveguide structures comprise a first waveguide structure and a second waveguide structure;
the first circulation step:
selecting the first sub-mask as a target sub-mask;
shielding the second sub-mask, and etching the waveguide core layer along the first opening to form a first waveguide structure;
the second circulation step:
selecting the second sub-mask as a target sub-mask;
and shielding the first sub-mask and the first waveguide structure, and etching the waveguide core layer except the first waveguide structure along the first opening to form a second waveguide structure.
2. The method of claim 1, wherein the step of forming a patterned mask layer on the surface of the waveguide core layer comprises:
depositing a mask material on the surface of the waveguide core layer to form a mask layer;
and etching the mask layer to form a plurality of sub-masks and openings which are positioned between the adjacent sub-masks and penetrate through the mask layer along the direction vertical to the substrate.
3. The method of claim 1, wherein depositing a masking material on the surface of the waveguide core further comprises:
and forming a buffer layer on the surface of the waveguide core layer.
4. A method of forming a waveguide device according to claim 1, wherein the first waveguide structure is a strip waveguide structure; the specific steps for forming the first waveguide structure include:
forming a first shielding layer for coating the second sub-mask;
and etching the waveguide core layer along the first opening until the waveguide core layer penetrates through the waveguide core layer.
5. The method of claim 4, wherein the step of masking the first sub-mask and the first waveguide structure comprises:
and forming a second shielding layer which covers the first sub-mask and covers the side wall of the first waveguide structure.
6. The method of claim 5, wherein the second waveguide structure is a ridge waveguide structure; the specific step of etching the waveguide core layer except the first waveguide structure along the first opening includes:
and etching the waveguide core layer except the first waveguide structure along the first opening to a first preset depth.
7. The method of claim 6, wherein the patterned mask layer further comprises a third sub-mask and a second opening between the third sub-mask and the second sub-mask and through the patterned mask layer; the first shielding layer covers the second sub-mask and the third sub-mask, and the second shielding layer covers the first sub-mask and the third sub-mask and covers the side wall of the first waveguide structure; after the second waveguide structure is formed, the method further comprises the following steps:
and a third circulation step:
selecting the third sub-mask as a target sub-mask;
and shielding the first sub mask, the second sub mask, the first waveguide structure and the second waveguide structure, and etching the waveguide core layer except the first waveguide structure and the second waveguide structure along the second opening to form a third waveguide structure.
8. The method of claim 7, wherein the third waveguide structure is a ridge waveguide structure; the specific step of etching the waveguide core layer along the second opening except for the first waveguide structure and the second waveguide structure includes:
and etching the waveguide core layer except the first waveguide structure and the second waveguide structure to a second preset depth along the second opening, wherein the second preset depth is different from the first preset depth.
9. The method as claimed in claim 1, wherein the substrate comprises a bottom layer of silicon, a buried insulating layer covering a surface of the bottom layer of silicon, and a top layer of silicon covering a surface of the buried insulating layer, wherein the top layer of silicon serves as the waveguide core layer.
10. The method of claim 1, further comprising, after forming the plurality of waveguide structures, the steps of:
and removing the patterned mask layer and forming an upper cladding which covers the plurality of waveguide structures and fills gaps between the adjacent waveguide structures.
11. The method of claim 10, wherein the step of removing the patterned masking layer and forming the upper cladding layer comprises:
depositing a first cladding material which covers the surfaces of the plurality of waveguide structures, the side walls of the patterned mask layer and fills gaps between the adjacent waveguide structures;
removing the patterned mask layer and exposing the plurality of waveguide structures;
depositing a second cladding material on the exposed plurality of waveguide structure surfaces and the first cladding material surface to form an upper cladding comprising the first cladding material and the second cladding material.
12. A waveguide device, comprising:
a substrate;
a plurality of waveguide structures located on the surface of the substrate, the plurality of waveguide structures being formed using the method of forming a waveguide device according to any one of claims 1 to 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010344128.5A CN111624710B (en) | 2020-04-27 | 2020-04-27 | Waveguide device and method of forming the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010344128.5A CN111624710B (en) | 2020-04-27 | 2020-04-27 | Waveguide device and method of forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111624710A CN111624710A (en) | 2020-09-04 |
| CN111624710B true CN111624710B (en) | 2022-06-10 |
Family
ID=72258103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010344128.5A Active CN111624710B (en) | 2020-04-27 | 2020-04-27 | Waveguide device and method of forming the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111624710B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114035270B (en) * | 2021-11-08 | 2023-10-13 | 浙江光特科技有限公司 | Method for etching metal in optical waveguide |
| CN115185038B (en) * | 2022-09-09 | 2023-08-11 | 杭州光智元科技有限公司 | Semiconductor device and manufacturing method thereof |
| CN116736440B (en) * | 2023-08-16 | 2024-02-09 | 赛丽科技(苏州)有限公司 | Preparation process of multi-height waveguide |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6376272B1 (en) * | 2000-06-06 | 2002-04-23 | Lucent Technologies, Inc. | InA1As etch stop layer for precise semiconductor waveguide fabrication |
| US6403286B1 (en) * | 1999-11-04 | 2002-06-11 | Corning Incorporated | High aspect ratio patterning of glass film |
| CN101217159A (en) * | 2007-12-28 | 2008-07-09 | 中国电子科技集团公司第五十五研究所 | A ballasting resistor structure and manufacturing method of microwave power transistor dynamic emitter electrode |
| CN103048736A (en) * | 2011-10-14 | 2013-04-17 | 上海圭光科技有限公司 | Method for producing conical multilayer ridge waveguide |
| CN103048733A (en) * | 2011-10-14 | 2013-04-17 | 上海圭光科技有限公司 | Conical multilayer ridge waveguide structure and production method thereof |
| US8761552B1 (en) * | 2009-12-08 | 2014-06-24 | University Of Washington Through Its Center For Commercialization | Fabricating waveguides in conjunction with interconnect fabrication in back-ends of integrated circuits and structures thereof |
| CN105789111A (en) * | 2014-12-18 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | Formation method for semiconductor structure |
-
2020
- 2020-04-27 CN CN202010344128.5A patent/CN111624710B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6403286B1 (en) * | 1999-11-04 | 2002-06-11 | Corning Incorporated | High aspect ratio patterning of glass film |
| US6376272B1 (en) * | 2000-06-06 | 2002-04-23 | Lucent Technologies, Inc. | InA1As etch stop layer for precise semiconductor waveguide fabrication |
| CN101217159A (en) * | 2007-12-28 | 2008-07-09 | 中国电子科技集团公司第五十五研究所 | A ballasting resistor structure and manufacturing method of microwave power transistor dynamic emitter electrode |
| US8761552B1 (en) * | 2009-12-08 | 2014-06-24 | University Of Washington Through Its Center For Commercialization | Fabricating waveguides in conjunction with interconnect fabrication in back-ends of integrated circuits and structures thereof |
| CN103048736A (en) * | 2011-10-14 | 2013-04-17 | 上海圭光科技有限公司 | Method for producing conical multilayer ridge waveguide |
| CN103048733A (en) * | 2011-10-14 | 2013-04-17 | 上海圭光科技有限公司 | Conical multilayer ridge waveguide structure and production method thereof |
| CN105789111A (en) * | 2014-12-18 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | Formation method for semiconductor structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111624710A (en) | 2020-09-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111624710B (en) | Waveguide device and method of forming the same | |
| KR100858877B1 (en) | Method for fabricating semiconductor device | |
| JP2007519041A (en) | Silicon optical device | |
| US5721174A (en) | Narrow deep trench isolation process with trench filling by oxidation | |
| KR20120004173A (en) | Semiconductor device with side contact and method for manufacturing the same | |
| CN111596406B (en) | Thick film optical waveguide and method of making the same | |
| KR20090063131A (en) | Method for manufacturing semiconductor device | |
| JPH08330299A (en) | Planar separation region in integrated circuit and its formation | |
| US5849626A (en) | Method for forming isolation region of semiconductor device | |
| CN111211039B (en) | Method for forming trench isolation structure | |
| CN111986989A (en) | Semiconductor structure and forming method thereof | |
| KR100842508B1 (en) | Method for manufacturing device isolation layer of semiconductor device | |
| US8486741B2 (en) | Process for etching trenches in an integrated optical device | |
| CN112992669A (en) | Semiconductor structure and forming method thereof | |
| KR20000042870A (en) | Forming method of trench of semiconductor device | |
| JPH0555361A (en) | Semiconductor device and manufacture thereof | |
| KR100313523B1 (en) | Manufacturing method for isolation in semiconductor device | |
| JP2786259B2 (en) | Method for manufacturing semiconductor device | |
| KR100548584B1 (en) | method for fabricating gate electrode | |
| JPS60124839A (en) | Manufacture of semiconductor device | |
| KR100399949B1 (en) | Method for forming isolation layer of semiconductor device | |
| KR20000003647A (en) | Method for forming an isolation insulator of semiconductor devices | |
| KR19980060903A (en) | Device Separating Method of Semiconductor Device | |
| TW202029352A (en) | Method for planarizing semiconductor structure | |
| KR100273244B1 (en) | Method for fabricating isolation region of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |