CN111613540A - High-reliability rectifier bridge and production process of rectifier module - Google Patents
High-reliability rectifier bridge and production process of rectifier module Download PDFInfo
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- CN111613540A CN111613540A CN202010384855.4A CN202010384855A CN111613540A CN 111613540 A CN111613540 A CN 111613540A CN 202010384855 A CN202010384855 A CN 202010384855A CN 111613540 A CN111613540 A CN 111613540A
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- Prior art keywords
- rectifier bridge
- rectifier
- chip
- rectification
- carrying
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000003513 alkali Substances 0.000 claims abstract description 10
- 238000005406 washing Methods 0.000 claims abstract description 9
- 239000004642 Polyimide Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000002161 passivation Methods 0.000 claims abstract description 8
- 229920001721 polyimide Polymers 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 238000003466 welding Methods 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 239000003822 epoxy resin Substances 0.000 claims abstract description 5
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 239000010949 copper Substances 0.000 claims abstract description 4
- 238000005520 cutting process Methods 0.000 claims abstract description 4
- 239000003292 glue Substances 0.000 claims abstract description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052737 gold Inorganic materials 0.000 claims abstract description 4
- 239000010931 gold Substances 0.000 claims abstract description 4
- 238000004806 packaging method and process Methods 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000004134 energy conservation Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 description 7
- 239000011521 glass Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The invention discloses a high-reliability rectifier bridge and a production process of a rectifier module, and belongs to the field of semiconductor device processing. The method comprises the following steps: taking the diffused silicon wafer after gold plating, carrying out photoetching and etching ditching, carrying out primary alkali washing on the wafer after etching ditching, and then cutting the wafer into OJ chips; welding the cut OJ chip in a rectifier bridge frame; carrying out secondary alkali washing on the OJ chip welded on the rectifier bridge frame; polyimide is filled around the copper-based frame after alkaline cleaning and the OJ chip on the substrate with the same function, so that passivation protection of the PN junction of the OJ chip is realized; and packaging the passivated product by using the traditional epoxy resin or AB glue. Compared with the traditional production process, the invention has the advantages of simple process, low cost, strong high temperature resistance and high and low temperature cycle resistance, high reliability, low power consumption, energy conservation and long service life.
Description
Technical Field
The invention belongs to the field of semiconductor device processing, and particularly relates to a rectifier bridge with high reliability and a rectifier module production process.
Background
The traditional rectifier bridge and rectifier module are generally formed by passivating and protecting a plurality of GPP chips, then welding the GPP chips into a frame for bridge connection, and encapsulating the outer parts of the GPP chips by using an insulating material epoxy resin. However, the process has the disadvantages that the expansion coefficient difference between the GPP chip and silicon is large, the high and low temperature cycle resistance (TC capacity) and the high temperature resistance (HTRB capacity) are relatively low, and the reliability is low; and the GPP chip processing needs three photoetching, the process is complex and the cost is high.
Disclosure of Invention
The invention provides a production process of a high-reliability rectifier bridge and a rectifier module, aiming at the problems of defects and defects in the prior art, wherein an OJ chip is adopted for alkali washing and polyimide passivation protection after being welded.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a production process of a high-reliability rectifier bridge and a rectifier module comprises the following steps:
a. taking the diffused silicon wafer after gold plating, carrying out photoetching and etching ditching, carrying out primary alkali washing on the wafer after etching ditching, and then cutting the wafer into OJ chips;
b. welding the cut OJ chip in a rectifier bridge frame;
c. carrying out secondary alkali washing on the OJ chip welded on the rectifier bridge frame;
d. polyimide is filled around the copper-based frame after alkaline cleaning and the OJ chip on the substrate with the same function, so that passivation protection of the PN junction of the OJ chip is realized;
e. and packaging the passivated product by using the traditional epoxy resin or AB glue.
Furthermore, the production process is applied to half-wave rectification, single-phase rectification, three-phase rectification and series of rectification bridges and rectification modules with the same functions.
Further, the rectifier bridge of the half-wave rectification series comprises TO-251, TO-252, TO-220, ITO-220, TO-263, TO-3P, TO-247, TO-252 and TO-92.
Further, the rectifier bridge of the single-phase rectification series comprises UMBF, MBF, MBS, ABS, DBS, DBM, KBP, GBP, KBL, KBU, GBU, GBJ, KBJ, GBPC, KBPC, BR, D3K, WOB and WOG.
Further, the rectifier bridge of the three-phase rectifier series comprises SKBPC, SGBJ, MT and TSB-5.
Further, the rectifier module comprises an MFQ and an MFS series.
The invention has the following beneficial effects: compared with the traditional rectifier bridge production process, the invention adopts the OJ chip to carry out alkali cleaning and polyimide passivation protection after being welded, and has the advantages that:
1) the process is simple and the cost is low;
2) the high temperature resistance (HTRB capacity) and the high and low temperature cycle resistance (TC capacity) are strong, and the reliability is high;
3) LOW power consumption (LOW-VF), energy conservation and long service life.
Detailed Description
The following examples are provided to illustrate specific embodiments of the present invention.
The first embodiment is as follows:
a production process of a high-reliability rectifier bridge and a rectifier module comprises the following steps:
a. taking the diffused silicon wafer after gold plating, carrying out photoetching and etching ditching, carrying out primary alkali washing on the wafer after etching ditching, and then cutting the wafer into OJ chips;
b. welding the cut OJ chip in a rectifier bridge frame;
c. carrying out secondary alkali washing on the OJ chip welded on the rectifier bridge frame;
d. polyimide is filled around the copper-based frame after alkaline cleaning and the OJ chip on the substrate with the same function, so that passivation protection of the PN junction of the OJ chip is realized;
e. and packaging the passivated product by using the traditional epoxy resin or AB glue.
The production process is applied to half-wave rectification, single-phase rectification, three-phase rectification and other rectification bridges and modules with the same functions.
Wherein the half-wave rectification comprises series of TO-251, TO-252, TO-220, ITO-220, TO-263, TO-3P, TO-247, TO-252, TO-92 and the like; the single-phase rectification comprises UMBF, MBF, MBS, ABS, DBS, DBM, KBP, GBP, KBL, KBU, GBU, GBJ, KBJ, GBPC, KBPC, BR, D3K, WOB, WOG and other series; the three-phase rectification comprises SKBPC, SGBJ, MT, TSB-5 and other series; the rectifier module comprises MFQ, MFS and other series.
Because of the mechanical properties of good high electrical insulation, high heat resistance and high flexibility of polyimide, the invention can be used for manufacturing high-reliability rectifier bridges and rectifier modules; the high-temperature resistance of the product can be improved, the risk of glass fracture in high-temperature and low-temperature circulation caused by large difference between the glass expansion coefficient and silicon of the GPP chip can be thoroughly avoided, and therefore the high-temperature and low-temperature circulation resistance (TC capacity) of the product and the high reliability of the final product are improved.
Experiments show that under the working condition of-55-195 ℃, the rectifier bridge/rectifier module processed by the traditional process adopts glass passivation protection, the glass of the rectifier bridge/rectifier module is hard and easy to damage in high-temperature and low-temperature circulation, and the TC capacity of the rectifier bridge/rectifier module is lower than 5000 cycles. The rectifier bridge using the process adopts polyimide passivation protection, is not easy to damage in high-temperature and low-temperature circulation, has the TC capacity of more than 1 ten thousand times, and has the advantages of obviously improved TC capacity and good reliability.
The rectifier bridge processed by the traditional process has the HTRB temperature of 150 ℃, while the rectifier bridge processed by the invention has the HTRB value of 175 ℃, and the capability of the rectifier bridge is also obviously improved.
The traditional GPP chip is well passivated by glass before welding, and the chip processing needs three times of photoetching, so that the process is complex and the cost is high. The cost of the production cost of the process can be saved by 20 percent.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. The present invention is not limited to the above-described embodiments, which are described in the specification and illustrated only for illustrating the principle of the present invention, but various changes and modifications may be made within the scope of the present invention as claimed without departing from the spirit and scope of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (6)
1. A production process of a high-reliability rectifier bridge and a rectifier module is characterized by comprising the following steps:
taking the diffused silicon wafer after gold plating, carrying out photoetching and etching ditching, carrying out primary alkali washing on the wafer after etching ditching, and then cutting the wafer into OJ chips;
welding the cut OJ chip in a rectifier bridge frame;
carrying out secondary alkali washing on the OJ chip welded on the rectifier bridge frame;
polyimide is filled around the copper-based frame after alkaline cleaning and the OJ chip on the substrate with the same function, so that passivation protection of the PN junction of the OJ chip is realized;
and packaging the passivated product by using the traditional epoxy resin or AB glue.
2. The process for producing a rectifier bridge and a rectifier module with high reliability as claimed in claim 1, wherein: the production process is applied to half-wave rectification, single-phase rectification, three-phase rectification and series of rectification bridges and rectification modules with the same function.
3. The process for producing a rectifier bridge and a rectifier module with high reliability as claimed in claim 2, wherein: the rectifier bridge of the half-wave rectification series comprises TO-251, TO-252, TO-220, ITO-220, TO-263, TO-3P, TO-247, TO-252 and TO-92.
4. The process for producing a rectifier bridge and a rectifier module with high reliability as claimed in claim 2, wherein: the rectifier bridge of the single-phase rectification series comprises UMBF, MBF, MBS, ABS, DBS, DBM, KBP, GBP, KBL, KBU, GBU, GBJ, KBJ, GBPC, KBPC, BR, D3K, WOB and WOG.
5. The process for producing a rectifier bridge and a rectifier module with high reliability as claimed in claim 2, wherein: the rectifier bridge of the three-phase rectification series comprises SKBPC, SGBJ, MT and TSB-5.
6. The process for producing a rectifier bridge and a rectifier module with high reliability as claimed in claim 2, wherein: the rectification module comprises an MFQ and an MFS series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010384855.4A CN111613540A (en) | 2020-05-09 | 2020-05-09 | High-reliability rectifier bridge and production process of rectifier module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010384855.4A CN111613540A (en) | 2020-05-09 | 2020-05-09 | High-reliability rectifier bridge and production process of rectifier module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111613540A true CN111613540A (en) | 2020-09-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010384855.4A Pending CN111613540A (en) | 2020-05-09 | 2020-05-09 | High-reliability rectifier bridge and production process of rectifier module |
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| Country | Link |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102509707A (en) * | 2011-12-19 | 2012-06-20 | 如皋市大昌电子有限公司 | Process of carrying out passivation protection on rectification chip by use of polyimide |
| CN106252245A (en) * | 2016-09-29 | 2016-12-21 | 黄山市七七七电子有限公司 | The manufacturing process of high-reliability high power semiconductor modular chip |
| CN107658346A (en) * | 2017-10-26 | 2018-02-02 | 捷捷半导体有限公司 | A kind of high junction temperature avalanche diode chip assembly and its manufacture method |
| CN107970612A (en) * | 2016-10-21 | 2018-05-01 | 电子技术公司 | multi-player video game matching system and method |
| CN108447768A (en) * | 2018-01-25 | 2018-08-24 | 如皋市远亚电子有限公司 | A kind of production technology of OJ chip manufacturings diode |
| CN109449212A (en) * | 2018-09-19 | 2019-03-08 | 四川上特科技有限公司 | A kind of naked envelope GPP rectifier diode chip and its manufacturing process |
-
2020
- 2020-05-09 CN CN202010384855.4A patent/CN111613540A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102509707A (en) * | 2011-12-19 | 2012-06-20 | 如皋市大昌电子有限公司 | Process of carrying out passivation protection on rectification chip by use of polyimide |
| CN106252245A (en) * | 2016-09-29 | 2016-12-21 | 黄山市七七七电子有限公司 | The manufacturing process of high-reliability high power semiconductor modular chip |
| CN107970612A (en) * | 2016-10-21 | 2018-05-01 | 电子技术公司 | multi-player video game matching system and method |
| CN107658346A (en) * | 2017-10-26 | 2018-02-02 | 捷捷半导体有限公司 | A kind of high junction temperature avalanche diode chip assembly and its manufacture method |
| CN108447768A (en) * | 2018-01-25 | 2018-08-24 | 如皋市远亚电子有限公司 | A kind of production technology of OJ chip manufacturings diode |
| CN109449212A (en) * | 2018-09-19 | 2019-03-08 | 四川上特科技有限公司 | A kind of naked envelope GPP rectifier diode chip and its manufacturing process |
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Application publication date: 20200901 |