CN111601451A - Interconnection structure subassembly and millimeter wave antenna module - Google Patents
Interconnection structure subassembly and millimeter wave antenna module Download PDFInfo
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- CN111601451A CN111601451A CN201910125934.0A CN201910125934A CN111601451A CN 111601451 A CN111601451 A CN 111601451A CN 201910125934 A CN201910125934 A CN 201910125934A CN 111601451 A CN111601451 A CN 111601451A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
- H05K1/0219—Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors
- H05K1/0222—Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors for shielding around a single via or around a group of vias, e.g. coaxial vias or vias surrounded by a grounded via fence
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/48—Earthing means; Earth screens; Counterpoises
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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Abstract
The invention provides an interconnection structure assembly and a millimeter wave antenna assembly. The at least two conductive layers include a first conductive layer and a second conductive layer. The two transmission lines are respectively a first transmission line on the first conductive layer and a second transmission line on the second conductive layer. The interconnection structure assembly further comprises a conductive hole which is arranged on the circuit board in a penetrating mode and electrically connected with the first transmission line and the second transmission line, and a plurality of metal buried holes which are arranged on the circuit board, surround the conductive hole and are used for shielding the conductive hole. Through set up a plurality of metal buried via holes that are used for shielding the electrically conductive hole around electrically connecting the electrically conductive hole of first transmission line and second transmission line, shield the electrically conductive hole to reduce the revealing of transmission signal, reduce the energy loss of transmission signal in interconnect structure subassembly transmission process.
Description
Technical Field
The invention relates to the technical field of communication, in particular to an interconnection structure assembly and a millimeter wave antenna assembly.
Background
With the development of science and technology, communication base stations develop towards high frequency, broadband and miniaturization, and millimeter wave antennas gradually develop towards microstrip antennas and beam forming array antennas. With the miniaturization of the millimeter wave base station, the millimeter wave beam forming array microstrip antenna and the millimeter wave chip are integrated on different surfaces of the same board card, the millimeter wave beam forming array microstrip antenna and the millimeter wave chip are connected through the vertical interconnection structure, and the connection structure can be simplified by adopting the interconnection structure.
The existing millimeter-wave band vertical interconnection mode mainly comprises the following steps: referring to fig. 1a and 1b, a first transmission line 2 and a second transmission line 3 are disposed on two different conductive layers 5 on a circuit board 1, a conductive hole 4 electrically connecting the first transmission line 2 and the second transmission line 3 is disposed on the circuit board 1, and a plurality of shielding holes 6 are disposed on both sides of the first transmission line 2 and the second transmission line 3 of the circuit board 1. However, when the vertical interconnection structure is adopted, as the frequency is increased to millimeter waves, as the integration level of a base station is increased and the number of conducting layers is increased, the length of the vertical interconnection structure is increased, so that the parasitic effect is more obvious, and the transmission loss of the conventional vertical interconnection structure in a millimeter wave frequency band is too large to meet the use requirement.
Disclosure of Invention
The invention provides an interconnection structure assembly and a millimeter wave antenna assembly, which are used for improving transmission loss of an interconnection structure.
In a first aspect, the present invention provides an interconnect structure assembly, which includes a circuit board having at least two stacked conductive layers, and two transmission lines disposed on the circuit board and located on different conductive layers. Wherein the at least two conductive layers comprise a first conductive layer and a second conductive layer. The two transmission lines are respectively a first transmission line on the first conductive layer and a second transmission line on the second conductive layer. The interconnection structure assembly further comprises a conductive hole which is arranged on the circuit board in a penetrating mode and electrically connected with the first transmission line and the second transmission line, and a plurality of metal buried holes which are arranged on the circuit board, surround the conductive hole and are used for shielding the conductive hole.
Through foretell technical scheme, through encircle around the electrically conductive hole that connects first transmission line and second transmission line and set up a plurality of metal buried via holes that are used for shielding electrically conductive hole to shield above-mentioned electrically conductive hole, with the leakage that reduces transmission signal, reduce the energy loss of transmission signal in interconnect structure subassembly transmission process.
When the plurality of metal buried holes are specifically provided, the plurality of metal buried holes are uniformly distributed along the circumferential direction of the conductive hole. The diameters of the metal buried holes can be equal, so that the processing difficulty is reduced, and the manufacturing is facilitated. When each metal buried hole is specifically arranged, the axis of each metal buried hole is parallel to the axis of the conductive hole, so that the processing and the manufacturing are convenient.
In the above scheme, the lengths of the metal buried holes are equal, and two ends of the metal buried holes are flush, so as to facilitate processing of the metal buried holes.
In the specific setting, the voltage standing wave ratio of the part of the conductive hole between the first plane and the second plane is 1-1.2, wherein the first plane and the second plane are respectively planes where the orifices at the two ends of the plurality of metal buried holes are located. The voltage standing wave ratio of the part of the conductive hole between the first plane and the second plane is less than or equal to 1.2, so that the performance of the voltage standing wave ratio of the interconnection structure in a millimeter wave frequency band is improved, the loss of transmission signals on the conductive hole between the first plane and the second plane is further reduced, and the frequency band of the transmission signals are convenient to control.
Further, the first plane is close to the first conductive layer, and the voltage standing wave ratio of a portion, between the first plane and a third plane, of the conductive hole is 1-1.2, wherein the third plane is a plane where an orifice at one end of the first conductive layer of the conductive hole is located. The voltage standing wave ratio of the part, positioned between the first plane and the first conducting layer, of the conducting hole is smaller than or equal to 1.2, so that the performance of the voltage standing wave ratio of the interconnection structure in a millimeter wave frequency band is improved, the loss of a part, positioned between the first plane and the first conducting layer, of a transmission signal in the conducting hole is further reduced, and the frequency band of the transmission signal are convenient to control.
Furthermore, the second plane is close to the second conductive layer, and the voltage standing wave ratio of the part of the conductive hole between the second plane and a fourth plane is 1-1.2, wherein the fourth plane is a plane where an orifice at one end of the second conductive layer is located on the conductive hole. The voltage standing wave ratio of the part, positioned between the second plane and the second conducting layer, of the conducting hole is smaller than or equal to 1.2, so that the performance of the voltage standing wave ratio of the interconnection structure in a millimeter wave frequency band is improved, the loss of a part, positioned between the second plane and the second conducting layer, of a transmission signal in the conducting hole is further reduced, and the frequency band of the transmission signal are convenient to control.
In the above-mentioned solution, the circuit board further includes at least one conductive layer between the first conductive layer and the second conductive layer. And one end of each metal buried hole is in conductive communication with the conductive layer adjacent to the first conductive layer, so that one end of each metal buried hole is grounded. And one end of each metal buried hole is communicated with the conducting layer adjacent to the first conducting layer, so that the shielding range of the metal buried holes is expanded, the signal shielding effect is improved, and the transmission loss of signals is further reduced. In the above solution, the other end of each shielding buried hole is in conductive communication with the conductive layer adjacent to the second conductive layer, so that both ends of each metal buried hole are grounded. And the other end of each shielding buried hole is in conductive communication with the conductive layer adjacent to the second conductive layer, so that the shielding range of the metal buried holes is further expanded, the signal shielding effect is further improved, and the transmission loss of signals is further reduced.
When the interconnection structure assembly is specifically arranged, the interconnection structure assembly further comprises a plurality of metal through holes which are arranged on the circuit board and located on two sides of the first transmission line, and a plurality of metal through holes which are located on two sides of the second transmission line. A plurality of metal through holes are formed in the two sides of the first transmission line and the second transmission line to shield the first transmission line and the second transmission line, so that transmission signals transmitted by the first transmission line and the second transmission line are shielded, and energy loss of the transmission signals in transmission of the first transmission line and the second transmission line is reduced.
When the conductive holes are specifically arranged, the conductive holes further include a first hole plate arranged on the first conductive layer and electrically connected with the first transmission line, and a second hole plate arranged on the second conductive layer and electrically connected with the second transmission line. And the maximum diameter of the first hole disc is larger than the line width of the first transmission line, and the maximum diameter of the second hole disc is larger than the line width of the second transmission line, so that the line width of the transmission line is reduced, the thickness of a plate is reduced, and the size of a millimeter wave plate-level circuit and the difficulty of layout and wiring are reduced.
In a second aspect, the present invention further provides a millimeter wave antenna assembly, where the millimeter wave antenna assembly includes any one of the above interconnection structure assemblies, so as to improve a signal shielding effect of the millimeter wave antenna assembly, reduce transmission loss of a transmission signal, and improve performance of the millimeter wave antenna assembly.
Drawings
FIG. 1a is a top view of a prior art interconnect structure assembly;
FIG. 1b is a cross-sectional view taken along plane A-A of the interconnect assembly shown in FIG. 1 a;
FIG. 2a is a top view of an interconnect structure assembly provided in accordance with an embodiment of the present invention;
FIG. 2b is a bottom view of the interconnect assembly shown in FIG. 2 a;
figure 2c is a cross-sectional view of the interconnect assembly shown in figure 2a taken along plane B-B.
Reference numerals:
10-circuit board 11-dielectric layer 20-conductive layer
21-first conductive layer 22-second conductive layer
23-third conductive layer 24-fourth conductive layer
31-first transmission line 32-second transmission line 40-conductive via
41-first hole disc 42-second hole disc 43-radio frequency via hole
51-metal buried via 52-metal via
61-avoidance circle 62-reference ground boundary
71-first plane 72-second plane
73-third plane 74-fourth plane
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides an interconnection structure component which is applied to a millimeter wave communication device, in particular to signal transmission between a millimeter wave beam forming array microstrip antenna and a millimeter wave chip which are arranged on different conducting layers on a circuit board. The interconnection structure component comprises a circuit board comprising at least two conductive layers and two transmission lines arranged on different conductive layers, wherein one transmission line of the two transmission lines is used for being electrically connected with the millimeter wave beam array microstrip antenna, and the other transmission line of the two transmission lines is used for being electrically connected with the millimeter wave chip. The interconnection structure component also comprises a conductive hole which is arranged on the circuit board in a penetrating way and is electrically connected with the two transmission lines, so that the connection between the transmission lines on different conductive layers is realized. The interconnect structure assembly is described in detail below with reference to the accompanying drawings.
Referring to fig. 2a, 2b and 2c, the interconnect assembly according to the embodiment of the invention includes a circuit board 10, and the circuit board 10 includes at least two conductive layers 20 stacked on each other. Specifically, the circuit board 10 may be a printed circuit board. When the conductive layers 20 on the circuit board 10 are specifically arranged, the number of the conductive layers 20 may be specifically 2, 3, 4, 7, and the like, and referring to fig. 2b, the number of the conductive layers 20 shown in the embodiment of the present invention is 7. Referring to fig. 2c, a dielectric layer 11 is disposed between two adjacent conductive layers 20 to isolate the adjacent conductive layers 20.
The interconnect structure assembly shown in the embodiment of the present invention further includes two transmission lines disposed on different conductive layers 20. When the interconnection structure assembly shown in the embodiment of the invention is applied to a millimeter wave antenna assembly, one of the two transmission lines is used for being electrically connected with a millimeter wave beam forming array microstrip antenna, and the other transmission line is used for being electrically connected with a millimeter wave chip. For the convenience of the following description, referring to fig. 2a, fig. 2b and fig. 2c, the two transmission lines are the first transmission line 31 and the second transmission line 32, respectively, and the conductive layer on which the first transmission line 31 is located is the first conductive layer 21, and the conductive layer 20 on which the second transmission line 32 is located is the second conductive layer 22. Obviously, the first transmission line 31 and the second transmission line 32, and the first conductive layer 21 and the second conductive layer 22 are only used for distinguishing and not for limiting the number and the position of the two transmission lines on the conductive layer 20. Only one way of arranging the first transmission line 31 and the second transmission line 32 is shown in fig. 2c, but other arrangements are also possible, for example, the first transmission line 31 and the second transmission line 32 extend in the same direction. In addition, the first transmission line 31 and the second transmission line 32 may be disposed on other conductive layers 20 besides the two outermost conductive layers 20 on the circuit board 10, and it is only necessary that the first transmission line 31 and the second transmission line 32 are disposed on different conductive layers 20, and the present invention falls into the protection scope of the embodiment of the present invention.
Referring to fig. 2a and 2b, a plurality of metal vias 52 for shielding the transmission line are further disposed on two sides of each transmission line according to the embodiment of the present invention. Specifically, referring to fig. 2a, a plurality of metal vias 52 for shielding the first transmission line 31 are disposed on two sides of the first transmission line 31, and the plurality of metal vias 52 are located outside the reference ground boundary 62 of the first transmission line 31 (the metal vias 52 and the first transmission line 31 are respectively located on different sides of the reference ground boundary 62, and one side close to the first transmission line 31 is an inner side of the reference ground boundary 62, and one side far away from the first transmission line 31 is an outer side of the reference ground boundary 62). Wherein, the reference ground boundary 62 of the first transmission line 31 is a reference ground boundary in the prior art. When the plurality of metal vias 52 are specifically arranged, the plurality of metal vias 52 may be uniformly distributed along the first transmission line 31, specifically, referring to fig. 2a, an arrangement direction of the plurality of metal vias 52 may be parallel to an axis of the first transmission line 31, and a distance between two adjacent metal vias 52 may be equal. When each metal via 52 is specifically provided, the diameter of each metal via 52 may be equal to facilitate processing and manufacturing. Fig. 2a shows only one arrangement of the plurality of metal vias 52, but other arrangements, such as a staggered arrangement, may be used. In addition, the manner of disposing the plurality of metal vias 52 on the two sides of the second transmission line 32 refers to the manner of disposing the plurality of metal vias 52 on the two sides of the first transmission line 31, and is not described herein again.
Referring to fig. 2a, 2b and 2c, the interconnection structure assembly according to the embodiment of the present invention further includes a conductive hole 40 penetrating through the circuit board 10 and electrically connecting the first transmission line 31 and the second transmission line 32.
In specific, referring to fig. 2a, 2b and 2c, the conductive hole 40 includes a first hole pad 41 disposed on the first conductive layer 21 and electrically connected to the first transmission line 31, a second hole pad 42 disposed on the second conductive layer 22 and electrically connected to the second transmission line 32, and a radio frequency via 43 connecting the first hole pad 41 and the second hole pad 42. The material of the first aperture plate 41, the second aperture plate 42 and the rf via 43 may be conductive material such as copper, silver, aluminum, alloy, etc. The sizes of the first hole plate 41, the second hole plate 42 and the radio frequency via hole 43 are reasonably determined by combining the line widths, the arrangement positions, the spaces and other factors of the first transmission line 31 and the second transmission line 32.
When the first orifice plate 41 described above is specifically provided, the maximum diameter of the first orifice plate 41 (the outer diameter of the first orifice plate 41) is larger than the line width of the first transmission line 31. In particular, with reference to FIG. 2a, the maximum diameter of the first orifice plate 41 is Φ1The line width of the first transmission line 31 is d1Wherein phi is1>d1. By the above arrangement, the line width of the first transmission line 31 is reduced. In the specific arrangement of the second aperture disk 42, the maximum diameter of the second aperture disk 42 is larger than the line width of the second transmission line 32, and in particular, referring to fig. 2b, the maximum diameter of the second aperture disk 42 is Φ2The second transmission line 32 has a line width d2Wherein phi is2>d2. By the above arrangement, the line width of the second transmission line 32 is reduced. By the arrangement mode, the thickness of the circuit board 10 can be reduced, and the size and the layout and wiring difficulty of the millimeter wave board-level circuit can be reduced. In addition, fig. 2a and 2b only show one arrangement of the hole plate of the conductive hole 40 and the transmission line, and in addition theretoOther arrangements may be used, for example, the maximum diameter of the hole plate of the conductive hole 40 is equal to the line width of the transmission line, or the maximum diameter of the hole plate of the conductive hole 40 is smaller than the line width of the transmission line, which is specifically determined by combining the size of the circuit board 10, the line width of the transmission line, the type of the transmission signal, and the like.
Referring to fig. 2a, 2b and 2c, the interconnection structure assembly according to the embodiment of the present invention further includes a plurality of metal buried vias 51 disposed on the circuit board 10 and surrounding the conductive vias 40 for shielding the conductive vias 40, and the plurality of metal buried vias 51 disposed for shielding the conductive vias 40 are used for shielding signals transmitted through the conductive vias 40, so as to reduce transmission loss of the transmitted signals on the conductive vias 40.
Specifically, when the plurality of metal buried holes 51 are provided, referring to fig. 2a and 2b, the plurality of metal buried holes 51 may be uniformly distributed along the circumferential direction of the conductive hole 40. Specifically, each of the plurality of metal buried holes 51 has the same distance from the conductive hole 40, and the distance between two adjacent metal buried holes 51 is the same, so as to simplify the manufacturing difficulty. Referring to fig. 2a, the plurality of buried metal vias 51 are located outside the relief circle 61 corresponding to the conductive via 40 (with the relief circle 61 as a reference, the side facing the guide via 40 is the inside of the relief circle 61, and the side away from the guide via 40 is the outside of the relief circle 61). Referring to fig. 2b, the plurality of metal buried holes 51 are located outside the relief circle 61 corresponding to the guide hole 40. The avoiding circle 61 of the conductive hole 40 is an avoiding circle in the prior art, and refers to a circle for isolating the conductive hole 40, which is made by taking the hole center of the conductive hole 40 as the center of a circle and the avoiding distance of the guide hole 40 as the radius.
When each of the metal buried holes 51 is specifically provided, an axis of each of the metal buried holes 51 may be parallel to an axis of the conductive via 40, so as to simplify the manufacturing difficulty. The diameters of the metal buried holes 51 may be equal to each other, so as to unify the sizes of the metal buried holes 51, thereby simplifying the difficulty in processing and manufacturing. The above-described arrangement of the plurality of metal buried holes 51 is not exclusive, and besides, other arrangements may also be adopted, for example, the diameters of some of the metal buried holes 51 in the plurality of metal buried holes 51 are equal, some of the metal buried holes 51 are not equal, or the diameters of all of the metal buried holes 51 in the plurality of metal buried holes 51 are not equal; the plurality of metal buried holes 51 may be non-uniformly distributed along the circumferential direction of the conductive hole 40; each buried metal via 51 is located at an unequal distance, or partially equal and partially unequal distance, from the conductive via 40.
The embodiments of the present invention show a plurality of buried metal vias 51 of equal length. Specifically, referring to fig. 2c, the lengths of the plurality of metal buried holes 51 are all l, where the length of each metal buried hole 51 refers to a distance between one end and the other end of the metal buried hole 51 along the axial direction of the metal buried hole 51. The embodiment of the present invention shows a plurality of metal buried holes 51 having both ends flush. Specifically, referring to fig. 2c, in the embodiment of the present invention, one end of the two ends of the plurality of metal buried holes 51 is located on the same first plane 71, and the other end of the plurality of metal buried holes 51 is located on the same second plane 72. For convenience of description, the first plane 71 is a plane close to the first conductive layer 21, and the second plane 72 is a plane close to the second conductive layer 22.
In specific arrangement, referring to fig. 2c, the circuit board 10 according to the embodiment of the present invention further includes at least one conductive layer 20 interposed between the first conductive layer 21 and the second conductive layer 22. With continued reference to fig. 2c, one end of the plurality of metal buried vias 51 shown in the embodiment of the present invention is in conductive communication with one conductive layer 20 located between the first conductive layer 21 and the second conductive layer 22, so as to achieve grounding of one end of the plurality of metal buried vias 51, thereby improving the signal shielding effect.
Specifically, one end of each of the plurality of metal buried holes 51 is in conductive communication with the conductive layer 20 adjacent to the first conductive layer 21. Referring to fig. 2c, one end of each of the plurality of metal buried holes 51 is in conductive communication with the third conductive layer 23 adjacent to the first conductive layer 21, so that the shielding range of the plurality of metal buried holes 51 to the conductive hole 40 is expanded, and the shielding effect to the conductive hole 40 is improved.
More specifically, the other ends of the plurality of metal buried vias 51 shown in the embodiment of the present invention are in conductive communication with the conductive layer 20 adjacent to the second conductive layer 22 described above. Referring to fig. 2c, the other ends of the plurality of metal buried holes 51 are in conductive communication with the fourth conductive layer 24 adjacent to the second conductive layer 22, so that the shielding range of the plurality of metal buried holes 51 to the conductive hole 40 is further expanded, and the shielding effect to the conductive hole 40 is further improved.
When the plurality of metal buried holes 51 have the same length and the two ends are flush with each other, the voltage standing wave ratio of the portion of the conductive via 40 between the first plane 71 and the second plane 72 may be set to 1 to 1.2 by adjusting parameters such as the aperture of the conductive via 40, the diameter of the relief circle 61 of the conductive via 40, the number of the metal buried holes 51, the distance between the metal buried holes 51 and the conductive via 40, and the diameter of each metal buried hole 51. Specifically, the voltage standing wave ratio of the portion of the conductive via 40 between the first plane 71 and the second plane 72 may be any value between 1.00, 1.02, 1.05, 1.08, 1.10, 1.13, 1.15, 1.18, 1.20, or the like, which is between 1 and 1.2. The voltage standing wave ratio of the part of the conductive hole 40 between the first plane 71 and the second plane 72 is less than or equal to 1.2, so that the performance of the voltage standing wave ratio of the interconnection structure in a millimeter wave frequency band is improved, the transmission loss of a transmission signal on the conductive hole 40 between the first plane 71 and the second plane 72 is further reduced, and the frequency band of the transmission signal are conveniently controlled.
Further, the voltage standing wave ratio of the portion of the conductive via 40 between the first plane 71 and the first conductive layer 21 may be set to 1 to 1.2 by adjusting parameters such as the size of the first via 41, the size of the aperture of the conductive via 40, and the diameter of the escape circle 61 corresponding to the conductive via 40. Specifically, referring to fig. 2c, the plane of the opening of the conductive hole 40 at one end of the first conductive layer 21 is the third plane 73, the voltage standing wave ratio of the portion of the conductive hole 40 between the first plane 71 and the third plane 73 is 1 to 1.2, and the voltage standing wave ratio of the portion of the conductive hole 40 between the first plane 71 and the third plane 73 may be any value between 1.00, 1.02, 1.05, 1.08, 1.10, 1.13, 1.15, 1.18, 1.20, and the like, and is between 1 to 1.2. By making the voltage standing wave ratio of the portion of the conductive via 40 between the first plane 71 and the first conductive layer 21 less than or equal to 1.2, the performance of the voltage standing wave ratio of the interconnection structure in the millimeter wave frequency band is improved, the loss of the transmission signal in the portion of the conductive via 40 between the first plane 71 and the first conductive layer 21 is further reduced, and the frequency band and frequency band of the transmission signal are conveniently controlled.
Further, the voltage standing wave ratio of the portion of the conductive via 40 between the second plane 72 and the second conductive layer 22 may be set to 1 to 1.2 by adjusting parameters such as the size of the second hole plate 42, the size of the hole diameter of the conductive via 40, and the diameter of the escape circle 61 corresponding to the guide hole 40. Specifically, referring to fig. 2c, the plane of the opening of the conductive hole 40 at one end of the second conductive layer 22 is a fourth plane 74, the voltage standing wave ratio of the portion of the conductive hole 40 between the second plane 72 and the fourth plane 74 is 1 to 1.2, and the voltage standing wave ratio of the portion of the conductive hole 40 between the second plane 72 and the fourth plane 74 may be any value between 1.00, 1.02, 1.05, 1.08, 1.10, 1.13, 1.15, 1.18, 1.20, and the like. By making the voltage standing wave ratio of the portion of the conductive via 40 located between the second plane 72 and the second conductive layer 22 less than or equal to 1.2, the performance of the voltage standing wave ratio of the interconnect structure in the millimeter wave frequency band is improved, the loss of the transmission signal in the portion of the conductive via 40 located between the second plane 72 and the second conductive layer 22 is further reduced, and the frequency band and frequency band of the transmission signal are conveniently controlled.
In addition, the lengths of the plurality of metal buried holes 51 may be partially equal and partially unequal, or the lengths of each of the plurality of metal buried holes 51 may be unequal. The ends of the plurality of metal buried holes 51 may be partially flush and partially non-flush, and specifically, one end of a part of the metal buried holes 51 may be located in the same conductive layer 20, and one end of another part of the metal buried holes 51 may be located in another conductive layer 20. The lengths and end positions of the plurality of metal buried holes 51 may be determined reasonably by combining the thickness of the circuit board 10, the number of layers of the conductive layer 20 between two transmission lines, the shielding requirements of the conductive holes 40, and the like.
Through the technical scheme, the plurality of metal buried holes 51 for shielding the conductive holes 40 are arranged around the conductive holes 40 for connecting the first transmission line 31 and the second transmission line 32 in a surrounding manner to shield the conductive holes 40, so that leakage of transmission signals is reduced, and energy loss of the transmission signals in the transmission process of the interconnection structure assembly is reduced.
In addition, the embodiment of the invention also provides a millimeter wave antenna assembly which comprises any one of the interconnection structure assemblies, and is used for improving the shielding effect, reducing the transmission loss and improving the performance of the millimeter wave antenna assembly.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. An interconnect structure assembly, comprising:
the circuit board at least comprises a first conductive layer and a second conductive layer which are stacked;
a first transmission line disposed on the first conductive layer;
a second transmission line disposed on the second conductive layer;
the conductive hole penetrates through the circuit board and is electrically connected with the first transmission line and the second transmission line;
and the metal buried holes are arranged on the circuit board, surround the conductive holes and are used for shielding the conductive holes.
2. The interconnect structure assembly of claim 1, wherein the plurality of metal buried vias are equal in length and are flush at both ends.
3. The interconnect assembly of claim 2, wherein a portion of the conductive via between the first plane and the second plane has a voltage standing wave ratio of 1 to 1.2; the first plane and the second plane are planes where orifices at two ends of the plurality of metal buried holes are located respectively.
4. The interconnect structure assembly of claim 3,
the voltage standing wave ratio of the part of the conductive hole between the first plane and the third plane is 1-1.2; the first plane is close to the first conducting layer, and the third plane is a plane where an orifice at one end of the first conducting layer is located on the conducting hole.
5. The interconnect structure assembly of claim 4,
the voltage standing wave ratio of the part of the conductive hole between the second plane and the fourth plane is 1-1.2; the second plane is close to the second conducting layer, and the fourth plane is a plane where an orifice at one end of the second conducting layer is located on the conducting hole.
6. The interconnect assembly of claim 2, wherein the circuit board further comprises at least one conductive layer between the first conductive layer and the second conductive layer, and wherein each metal buried via has one end in conductive communication with a conductive layer adjacent to the first conductive layer.
7. The interconnect assembly of claim 6, wherein the other end of each shield buried via is in conductive communication with a conductive layer adjacent to the second conductive layer.
8. The interconnect structure assembly of claim 1, further comprising:
the metal through holes are arranged on the circuit board and positioned on two sides of the first transmission line;
and the metal through holes are arranged on the circuit board and positioned on two sides of the second transmission line.
9. An interconnect structure assembly according to any of claims 1 to 8 wherein said conductive vias comprise:
the first hole disc is arranged on the first conductive layer and electrically connected with the first transmission line;
a second hole plate disposed on the second conductive layer and electrically connected to the second transmission line;
and the maximum diameter of the first hole plate is larger than the line width of the first transmission line, and the maximum diameter of the second hole plate is larger than the line width of the second transmission line.
10. A millimeter wave antenna assembly comprising the interconnect structure assembly of any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910125934.0A CN111601451A (en) | 2019-02-20 | 2019-02-20 | Interconnection structure subassembly and millimeter wave antenna module |
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Application publication date: 20200828 |