CN111599673A - Grinding and polishing method of molybdenum wafer - Google Patents
Grinding and polishing method of molybdenum wafer Download PDFInfo
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- CN111599673A CN111599673A CN202010493068.3A CN202010493068A CN111599673A CN 111599673 A CN111599673 A CN 111599673A CN 202010493068 A CN202010493068 A CN 202010493068A CN 111599673 A CN111599673 A CN 111599673A
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- 238000000227 grinding Methods 0.000 title claims abstract description 100
- 238000005498 polishing Methods 0.000 title claims abstract description 96
- 229910052750 molybdenum Inorganic materials 0.000 title claims abstract description 82
- 239000011733 molybdenum Substances 0.000 title claims abstract description 82
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000006061 abrasive grain Substances 0.000 claims description 11
- 239000012530 fluid Substances 0.000 claims description 7
- 238000007517 polishing process Methods 0.000 abstract description 5
- 238000001125 extrusion Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 67
- 239000002245 particle Substances 0.000 description 13
- 239000007788 liquid Substances 0.000 description 8
- 239000000835 fiber Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
The invention provides a grinding and polishing method of a molybdenum wafer, and belongs to the technical field of grinding and polishing. The grinding and polishing method comprises the following steps: installing the tool into a double-side grinding device, placing the molybdenum wafer to be ground and polished into a clamping hole of the tool, and carrying out double-side grinding and polishing on the molybdenum wafer to be ground and polished by adopting the double-side grinding device; the thickness of the tool is smaller than the target thickness of the molybdenum wafer. According to the invention, the thickness of the tool is controlled to be smaller than the target thickness of the molybdenum wafer, so that the extrusion of the grinding pad on the tool for clamping the molybdenum wafer in the grinding and polishing process can be reduced, and the problem of poor processing quality of the molybdenum wafer caused by deformation of the tool is avoided. The results of the examples show that the molybdenum wafer obtained by polishing by the method of the invention has high flatness and low roughness, and has no deformation.
Description
Technical Field
The invention relates to the technical field of grinding and polishing, in particular to a grinding and polishing method for a molybdenum wafer.
Background
The molybdenum wafer is used as a substrate material of a semiconductor device and is prepared by sequentially rolling, trimming, leveling, grinding and polishing, cleaning and other working procedures of a molybdenum ingot which is smelted and sintered. The polishing step is a step required for processing a molybdenum wafer to a predetermined thickness, improving the flatness of the molybdenum wafer, and reducing the surface roughness, and the polishing step is performed simultaneously on both sides of the molybdenum wafer by using a double-side polishing apparatus.
Because the substrate molybdenum wafer for the semiconductor device is thin in thickness and large in outer diameter, the substrate molybdenum wafer needs to be fixed by a tool in the grinding and polishing process. However, in the existing grinding and polishing process, the tool is easily extruded in the double-sided grinding device to deform, and finally the processing quality of the molybdenum wafer is poor.
Disclosure of Invention
The invention aims to provide a grinding and polishing method of a molybdenum wafer, which can solve the problem of poor processing quality of the molybdenum wafer caused by deformation of a tool.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a grinding and polishing method of a molybdenum wafer, which comprises the following steps:
installing the tool into a double-side grinding device, placing the molybdenum wafer to be ground and polished into a clamping hole of the tool, and carrying out double-side grinding and polishing on the molybdenum wafer to be ground and polished by adopting the double-side grinding device; the thickness of the tool is smaller than the target thickness of the molybdenum wafer.
Preferably, the thickness of the tool is 10-30 microns smaller than the target thickness of the molybdenum wafer.
Preferably, the shore a hardness of the polishing pad used for double-sided polishing is above 90.
Preferably, the average particle size of abrasive particles in the grinding fluid adopted by the double-sided polishing is 90nm, and the mass concentration of the abrasive particles is 10-20%.
Preferably, the grinding and polishing pressure during double-side grinding and polishing is 20-35 kg, and the rotating speed is 5-10 rpm.
Preferably, the surface flatness of the tool is within 5 μm.
Preferably, the tool is a tool subjected to double-side grinding.
Preferably, the conditions of the double-sided grinding are as follows: the pressure is 25-35 kg, the rotation speed is 5-10 rpm, and the Shore A hardness of the polishing pad is above 90.
Preferably, the abrasive grains in the polishing liquid used for the double-sided polishing have an average grain size of 1.0 μm and a mass concentration of 10 to 15%.
The invention provides a grinding and polishing method of a molybdenum wafer, which comprises the following steps: installing the tool into a double-side grinding device, placing the molybdenum wafer to be ground and polished into a clamping hole of the tool, and carrying out double-side grinding and polishing on the molybdenum wafer to be ground and polished by adopting the double-side grinding device; the thickness of the tool is smaller than the target thickness of the molybdenum wafer. According to the invention, by controlling the thickness of the tool to be smaller than the target thickness of the molybdenum wafer, the extrusion of the grinding pad on the tool for clamping the molybdenum wafer in the grinding and polishing process can be reduced, so that the poor processing quality of the molybdenum wafer caused by deformation of the tool is avoided. The results of the examples show that the molybdenum wafer obtained by the method of the invention has high flatness, low roughness and good processing quality.
Drawings
FIG. 1 is a longitudinal sectional view of a double side grinder of the present invention;
FIG. 2 is a plan view of the double side grinder of the present invention;
wherein: 1-double-sided grinding machine, 2-lower fixed plate, 3-upper fixed plate, 4-grinding pad, 5-liquid flowing device, 6-through hole, 7-sun gear, 8-internal gear, 9-tool, 10-clamping hole and M-molybdenum wafer.
Detailed Description
The invention provides a grinding and polishing method of a molybdenum wafer, which comprises the following steps:
installing the tool into a double-side grinding device, placing the molybdenum wafer to be ground and polished into a clamping hole of the tool, and carrying out double-side grinding and polishing on the molybdenum wafer to be ground and polished by adopting the double-side grinding device; the thickness of the tool is smaller than the target thickness of the molybdenum wafer.
In the present invention, the double-side grinding device is preferably a double-side grinder, and the double-side grinder is not particularly limited in the present invention, and any double-side grinder known in the art can be used for grinding and polishing the molybdenum wafer. The tool has no special requirement on the material of the tool, and the tool made of the material well known in the field can be adopted, and the tool can be specifically but not limited to stainless steel and metal titanium.
In the invention, the thickness of the tool is preferably 10-30 μm smaller than the target thickness of the molybdenum wafer, and more preferably 15-25 μm smaller. According to the invention, by controlling the thickness of the tool to be smaller than the target thickness of the molybdenum wafer, the extrusion of the grinding pad on the tool for clamping the molybdenum wafer in the grinding and polishing process can be reduced, so that the deformation of the molybdenum wafer caused by the deformation of the tool is avoided.
In the invention, the surface flatness of the tool is preferably within 5 μm, and the tool is preferably subjected to double-sided grinding to obtain the tool with the surface flatness and the thickness meeting the requirements.
In the present invention, the conditions for the double-side polishing are preferably: the pressure is 25-35 kg, the rotation speed is 5-10 rpm, and the Shore A hardness of the polishing pad is above 90. The pressure is more preferably 30kg and the rotational speed is more preferably 8 rpm. The grinding pad with Shore A hardness of more than 90 is adopted, so that the grinding efficiency and the grinding uniformity are improved. In the present invention, the average particle size of abrasive grains in the polishing liquid used for double-side polishing of the tool is preferably 1.0 μm, and the mass concentration of the abrasive grains is preferably 10 to 15%, and more preferably 13%. According to the invention, the double-side grinding condition is controlled within the range, so that the flatness of the surface of the tool is improved, and the grinding and polishing quality of the molybdenum wafer is improved.
After the tool meeting the requirements is obtained, the tool is installed in a double-side grinding and polishing device, the molybdenum wafer to be ground and polished is placed in a clamping hole of the tool, and the double-side grinding and polishing are carried out on the molybdenum wafer to be ground and polished by adopting a double-side grinding device. The invention has no special requirements on the installation mode of the tool, and the installation mode known in the field can be adopted. The invention has no special requirements on the size (including thickness and diameter) of the molybdenum wafer to be polished, and the skilled person can select the size at will according to the actual requirement.
In the invention, the shore a hardness of the polishing pad used for double-side polishing is preferably over 90, and in the embodiment of the invention, the polishing pad used for double-side polishing of the molybdenum wafer is the same as the polishing pad used for double-side polishing of the tool. The grinding pad with Shore A hardness of more than 90 is adopted, so that the grinding efficiency and the grinding uniformity of the molybdenum wafer are improved. In the invention, the average grain size of abrasive grains in the grinding fluid used for the double-sided polishing is preferably 90 nm; the mass concentration of the abrasive grains is preferably 10 to 20%, more preferably 12 to 18%, and most preferably 13 to 15%. In the invention, the polishing pressure during double-sided polishing is preferably 20-35 kg, and more preferably 25-30 kg; the rotation speed is preferably 5 to 10rpm, more preferably 7 to 10 rpm. The invention controls the double-side polishing condition in the range, and is beneficial to further improving the flatness of the molybdenum wafer and reducing the roughness of the surface of the molybdenum wafer.
In order to make the technical solution of the present invention more clearly understood by those skilled in the art, the description will be made with reference to fig. 1 and 2. Fig. 1 is a longitudinal sectional view of a double side grinder, and fig. 2 is a plan view of the double side grinder.
As shown in fig. 1, the double-side polishing machine 1 includes a lower surface plate 2 and an upper surface plate 3 which are disposed to face each other in the vertical direction, polishing pads 4 are attached to the facing surfaces of the lower surface plate 2 and the upper surface plate 3, respectively, the upper surface plate 3 is provided with a through hole 6, a fluid device 5 for supplying polishing fluid and the like is provided on the upper portion of the upper surface plate 3, and the polishing fluid is supplied from the fluid device 5 through the through hole 6. A sun gear 7 is provided at the center between the upper surface plate 3 and the lower surface plate 2, and an internal gear 8 is provided at the peripheral edge of the double side grinder 1. The molybdenum wafer M placed in the clamping hole 10 of the tool 9 is clamped between the upper fixed plate 3 and the lower fixed plate 2.
As shown in fig. 2, 9 tools 9 are provided around the sun gear 7, and teeth of the sun gear 7 and the internal gear 8 are engaged with outer peripheral teeth of the tools 9, and the tools 9 revolve around the sun gear 7 while rotating on their axes as the upper surface plate 3 and the lower surface plate 2 are rotationally driven by a drive source not shown in the drawing. When the molybdenum wafer M is used as a polishing object, the molybdenum wafer M is placed in the clamping hole 10 of the tool 9, and both sides of the molybdenum wafer M are polished by the upper and lower polishing pads 4.
The method for polishing a molybdenum wafer according to the present invention is described in detail with reference to the following examples, which should not be construed as limiting the scope of the present invention.
Example 1
The outer diameter of the polished molybdenum wafer is 100mm, the thickness is 97 mu m +/-25 mu m, the roughness is less than or equal to 0.015 mu m, the flatness is less than or equal to 150 mu m, and 6 samples are processed in total.
(1) Double-sided grinding of the tool:
the tool is made of stainless steel, the original thickness is 100 micrometers, the grinding pad is a fiber polishing pad with the Shore A hardness of more than 90, the pressure of a double-sided grinding machine is 30kg, the rotating speed is 8rpm, the average particle size of grinding particles in grinding liquid is 1.0 micrometer, and the concentration of the grinding particles is 13 wt%; according to the grinding method, the thickness of the tool after grinding is 85 microns, and the surface flatness is within 5 microns.
(2) Grinding and polishing a molybdenum wafer:
the thickness before polishing is 0.13mm, the grinding pad is a fiber polishing pad with Shore A hardness of more than 90, the pressure of a double-sided grinding machine is 25kg, the rotating speed is 10rpm, the average grain size of abrasive grains in grinding liquid is 90nm, the abrasive grain concentration is 15 wt%, the polishing is carried out according to the polishing method, the molybdenum wafer obtained after polishing is detected, and the specific test result is shown in Table 1.
Table 1 example 1 physical properties of molybdenum wafers after polishing
| Sample numbering | 1 | 2 | 3 | 4 | 5 | 6 |
| Thickness: mum of | 96 | 97 | 97 | 96 | 97 | 97 |
| Flatness: mum of | 150 | 70 | 20 | 90 | 150 | 70 |
| Roughness: mum of | 0.014 | 0.014 | 0.015 | 0.013 | 0.014 | 0.015 |
Example 2
The outer diameter of the polished molybdenum wafer is 100mm, the thickness is 100 mu m +/-2.5 mu m, the roughness is less than or equal to 0.02 mu m, the flatness is less than or equal to 150 mu m, and 5 samples are processed in total.
(1) Double-sided grinding of the tool:
the tool is made of stainless steel, the original thickness is 100 micrometers, the grinding pad is a fiber polishing pad with the Shore A hardness of more than 90, the pressure of a double-sided grinding machine is 30kg, the rotating speed is 8rpm, the average particle size of grinding particles in grinding liquid is 1.0 micrometer, and the concentration of the grinding particles is 13 wt%; according to the grinding method, the thickness of the tool after grinding is 90 microns, and the surface flatness is within 5 microns.
(2) Grinding and polishing a molybdenum wafer:
the thickness before polishing is 0.15mm, the grinding pad is a fiber polishing pad with Shore A hardness of more than 90, the pressure of a double-sided grinding machine is 30kg, the rotating speed is 10rpm, the average grain size of abrasive grains in grinding liquid is 90nm, the abrasive grain concentration is 15 wt%, the polishing is carried out according to the polishing method, the molybdenum wafer obtained after polishing is detected, and the specific test result is shown in Table 2.
Table 2 example 2 physical properties of molybdenum wafers after polishing
| Sample numbering | 1 | 2 | 3 | 4 | 5 |
| Thickness: mum of | 101 | 100 | 101 | 100 | 100 |
| Flatness: mum of | 100 | 50 | 50 | 80 | 100 |
| Roughness: mum of | 0.015 | 0.015 | 0.014 | 0.014 | 0.015 |
Comparative example 1
The outer diameter of the polished molybdenum wafer is 100mm, the thickness is 97 mu m +/-25 mu m, the roughness is less than or equal to 0.015 mu m, and the flatness is less than or equal to 150 mu m.
Grinding and polishing the molybdenum wafer by adopting a traditional grinding and polishing method:
the tool is not subjected to double-sided grinding, and the thickness is 100 micrometers; the thickness of the molybdenum wafer before grinding and polishing is 0.13mm, a grinding pad adopted for double-sided grinding and polishing of the molybdenum wafer is a fiber polishing pad with Shore A hardness of more than 90, the double-sided grinding machine is pressurized by 25kg and rotates at 10rpm, the average particle size of grinding particles in grinding liquid is 90nm, and the concentration of abrasive particles is 15 wt%; according to the grinding and polishing method, 5 samples are processed by detecting the molybdenum wafer obtained after grinding and polishing, and the specific test results are shown in table 3.
TABLE 3 physical Properties of molybdenum wafer after polishing in comparative example 1
| Sample numbering | 1 | 2 | 3 | 4 | 5 |
| Thickness: mum of | 103 | 102 | 100 | 103 | 100 |
| Flatness: mum of | 270 | 275 | 280 | 280 | 300 |
| Roughness: mum of | 0.025 | 0.02 | 0.028 | 0.025 | 0.028 |
As can be seen from the results in table 3, since the tool is not ground, the thickness of the tool is greater than the target thickness of the molybdenum wafer, and the grinding pad processes the tool and the molybdenum wafer together, the tool is deformed, and the processing quality of the molybdenum wafer is affected.
The embodiment of the invention provides a molybdenum wafer grinding and polishing method, which can solve the problem of poor processing quality of the molybdenum wafer caused by deformation of a tool, and the molybdenum wafer obtained by the method has high flatness and low roughness.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (9)
1. A grinding and polishing method of a molybdenum wafer is characterized by comprising the following steps:
installing the tool into a double-side grinding device, placing the molybdenum wafer to be ground and polished into a clamping hole of the tool, and carrying out double-side grinding and polishing on the molybdenum wafer to be ground and polished by adopting the double-side grinding device; the thickness of the tool is smaller than the target thickness of the molybdenum wafer.
2. The grinding and polishing method as claimed in claim 1, wherein the thickness of the tool is 10-30 μm smaller than the target thickness of the molybdenum wafer.
3. The polishing method according to claim 1, wherein the shore a hardness of the polishing pad used for the double-side polishing is 90 or more.
4. The grinding and polishing method according to claim 1, wherein the abrasive grains in the grinding fluid used for double-sided grinding and polishing have an average grain size of 90nm and a mass concentration of 10-20%.
5. The polishing method according to claim 1, wherein the polishing pressure during double-side polishing is 20 to 35kg, and the rotation speed is 5 to 10 rpm.
6. The polishing method according to claim 1, wherein the surface flatness of the tool is within 5 μm.
7. The polishing method according to claim 1 or 6, wherein the tool is a double-side polished tool.
8. The polishing method according to claim 7, wherein the conditions of the double-side polishing are: the pressure is 25-35 kg, the rotation speed is 5-10 rpm, and the Shore A hardness of the polishing pad is above 90.
9. The polishing method according to claim 7, wherein the abrasive grains used for the double-side polishing have an average grain size of 1.0 μm and a mass concentration of 10 to 15%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010493068.3A CN111599673A (en) | 2020-06-03 | 2020-06-03 | Grinding and polishing method of molybdenum wafer |
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| CN202010493068.3A CN111599673A (en) | 2020-06-03 | 2020-06-03 | Grinding and polishing method of molybdenum wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112454160A (en) * | 2020-10-27 | 2021-03-09 | 宜兴市科兴合金材料有限公司 | Double-side polished molybdenum substrate, preparation method thereof and application thereof in LED light-emitting chip |
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|---|---|---|---|---|
| US5422316A (en) * | 1994-03-18 | 1995-06-06 | Memc Electronic Materials, Inc. | Semiconductor wafer polisher and method |
| JP2009279741A (en) * | 2008-05-26 | 2009-12-03 | Kovax Corp | Polishing device and method for spherical body and plate |
| CN101959647A (en) * | 2008-02-27 | 2011-01-26 | 信越半导体股份有限公司 | Carrier for double-side polishing device, and double-side polishing device and double-side polishing method that use same |
| JP6128198B1 (en) * | 2015-12-22 | 2017-05-17 | 株式会社Sumco | Wafer double-side polishing method and epitaxial wafer manufacturing method using the same |
| CN108369908A (en) * | 2016-02-16 | 2018-08-03 | 信越半导体株式会社 | Double-side grinding method and double-side polishing apparatus |
-
2020
- 2020-06-03 CN CN202010493068.3A patent/CN111599673A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5422316A (en) * | 1994-03-18 | 1995-06-06 | Memc Electronic Materials, Inc. | Semiconductor wafer polisher and method |
| CN101959647A (en) * | 2008-02-27 | 2011-01-26 | 信越半导体股份有限公司 | Carrier for double-side polishing device, and double-side polishing device and double-side polishing method that use same |
| JP2009279741A (en) * | 2008-05-26 | 2009-12-03 | Kovax Corp | Polishing device and method for spherical body and plate |
| JP6128198B1 (en) * | 2015-12-22 | 2017-05-17 | 株式会社Sumco | Wafer double-side polishing method and epitaxial wafer manufacturing method using the same |
| CN108369908A (en) * | 2016-02-16 | 2018-08-03 | 信越半导体株式会社 | Double-side grinding method and double-side polishing apparatus |
Non-Patent Citations (1)
| Title |
|---|
| 李景镇, 陕西科学技术出版社 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112454160A (en) * | 2020-10-27 | 2021-03-09 | 宜兴市科兴合金材料有限公司 | Double-side polished molybdenum substrate, preparation method thereof and application thereof in LED light-emitting chip |
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Application publication date: 20200828 |
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