CN111585040A - All-dielectric wave absorber based on graphene and Dirac semimetal - Google Patents
All-dielectric wave absorber based on graphene and Dirac semimetal Download PDFInfo
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- CN111585040A CN111585040A CN202010318920.3A CN202010318920A CN111585040A CN 111585040 A CN111585040 A CN 111585040A CN 202010318920 A CN202010318920 A CN 202010318920A CN 111585040 A CN111585040 A CN 111585040A
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- graphene
- wave absorber
- dirac semimetal
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 53
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 36
- 238000010521 absorption reaction Methods 0.000 claims abstract description 35
- 239000010410 layer Substances 0.000 claims abstract description 27
- 230000005284 excitation Effects 0.000 claims abstract description 6
- 239000002356 single layer Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- -1 graphite alkene Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 4
- 230000010287 polarization Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 8
- 238000002835 absorbance Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Aerials With Secondary Devices (AREA)
Abstract
The invention provides a full-medium wave absorber based on graphene and Dirac semimetal. The method is characterized in that: the graphene layer is composed of a graphene layer (1), medium layers (2) and (3) and a Dirac semimetal (4), wherein the graphene layer (1) is single-layer graphene. The terahertz wave band has two absorption peaks, the Fermi levels of the graphene layer (1) and the Dirac semimetal (4) can be changed respectively through external excitation, so that the two absorption frequencies can be adjusted, and the electromagnetic wave with the frequency of 3.96THz-9.75THz can be efficiently absorbed. The invention has the advantages of high absorption efficiency, wide adjustable range, insensitive polarization and the like.
Description
(I) technical field
The invention relates to an all-dielectric wave absorber based on graphene and Dirac semimetal, and belongs to the field of terahertz metamaterial wave absorption.
(II) background of the invention
The wave absorber is a device capable of effectively absorbing electromagnetic waves and preventing the electromagnetic waves from being reflected and transmitted, and the electromagnetic waves do not disappear through space but are converted into other forms of energy inside the wave absorber to be consumed. The property is applied to the military field, and can absorb electromagnetic wave signals sent by a radar, so that the aircraft has a stealth function. The high absorption rate of the electromagnetic wave is utilized, and the method can also be used in the field of high fidelity imaging and the field of thermal detection.
The existing metamaterial wave absorber for terahertz waves is generally formed by using a metal film as a reflecting layer, a middle dielectric layer and a patterned metamaterial on the top. The inventor finds in the research process that the prior art has at least the following disadvantages: most of the existing wave absorbers are made of metal placed on the bottom layer to reflect electromagnetic waves, but the metal structure is easy to oxidize, is fragile and easy to break, and affects the stability of the device. In addition, the adjustment method for the absorption frequency is mostly realized by changing the Fermi level of the surface metamaterial, and the adjustment range is small. In order to optimize and improve the problems, the inventor designs an all-dielectric wave absorber based on graphene and Dirac semimetal, and the wave absorber does not contain metal and has better stability compared with a wave absorber containing metal; the Fermi levels of the graphene and the Dirac semimetal can be respectively changed through external excitation, and the absorption frequency is adjusted in a double mode, so that a wider adjustable range is achieved.
Disclosure of the invention
The invention aims to provide an all-dielectric wave absorber based on graphene and Dirac semimetals, and the structure realizes double adjustment of absorption frequency by changing the Fermi levels of bottom graphene and top Dirac semimetals, and has a wider adjustable range.
The purpose of the invention is realized as follows:
the wave absorber consists of a graphene layer (1), dielectric layers (2) and (3) and a Dirac semimetal (4), and preferably, the wave absorber period P is 7000 nm. .
Preferably, the graphene layer (1) of the wave absorber is single-layer graphene with the thickness h1 being 0.34nm, the dielectric layer (2) is silicon dioxide with the thickness h2 being 600nm, and the dielectric layer (3) is silicon with the thickness h3 being 1200 nm.
Preferably, the dirac semimetal (4) of the wave absorber has a thickness h4 of 600nm and a dart-shaped block structure, four dart points are formed by intersecting two by two four cylinders with a radius R1 of 2800nm, a circle center of (2800,0), (0,2800), (-2800,0), (0, -2800) and a thickness h4 of 600nm, and are dispersed in a direction forming plus or minus 45 degrees with the x axis, the radius R2 of the central cylinder is 2000nm, and the thickness h4 of 600 nm.
When terahertz waves are incident to the wave absorber, graphene surface plasmon resonance can be excited on the interface of graphene and silicon dioxide, and a strong electric field is generated at the interface of graphene and silicon dioxide, so that strong absorption of electromagnetic waves is realized. In the terahertz wave band, the conductivity imaginary part of the graphene is larger than zero, and the graphene shows the property of metal, so that energy is not transmitted and only absorbed or reflected inside the device.
Meanwhile, the absorption of terahertz waves can be respectively realized at the two places by combining the Dirac semimetal at the top layer according to the impedance matching theory. The Fermi levels of the bottom graphene and the top dirac semimetal can be changed by adding an excitation source, so that double adjustment of absorption frequency is realized, and the adjustment range is wider.
Compared with the prior art, the invention has the following advantages: the structure does not contain metal, so that the overall performance is more stable; the absorption frequency is adjusted doubly by changing the Fermi levels of the graphene and the Dirac semimetal, so that the tunable range is wider; the absorption efficiency is high, and the TE/TM polarized electromagnetic wave absorption device has the same absorption effect; simple structure and easy processing.
(IV) description of the drawings
Figure 1 is a three-dimensional view of the wave absorbing device.
Figure 2 is a side view of the wave absorbing device.
Fig. 3 is a plan view of the wave absorber.
FIG. 4 is the absorption curves of the absorber for TE and TM waves when the Fermi levels of the Dirac semimetal and the graphene are 0.06eV and 0.3eV respectively.
FIG. 5 is a graph of the absorption rate of the wave absorber with the change of the Fermi level of graphene when the Fermi level of the Dirac semimetal is 0.09 eV.
FIG. 6 is a graph of the absorption of the absorber as a function of the Fermi level of the Dirac semimetal at a Fermi level of 0.3eV for graphene.
(V) detailed description of the preferred embodiments
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following examples, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not to be construed as limiting the present invention.
Example one
An all-dielectric wave absorber based on graphene and Dirac semimetal comprises the following steps:
as shown in fig. 1, the wave absorber comprises a graphene layer (1), medium layers (2) (3) and dirac semimetal (4), wherein the graphene layer (1) is single-layer graphene. The single-layer graphene and the dirac semimetal can receive external excitation to realize the self Fermi level adjustment, so that the absorption frequency can be adjusted.
When terahertz waves are incident to the wave absorber, graphene surface plasmon resonance can be excited on the interface of graphene and silicon dioxide, and a strong electric field is generated at the interface of graphene and silicon dioxide, so that strong absorption of electromagnetic waves is realized. In the terahertz wave band, the conductivity imaginary part of the graphene is larger than zero, and the graphene shows the property of metal, so that energy is not transmitted and only absorbed or reflected inside the device. By combining the Dirac semimetal on the top layer, the wave absorber can absorb proper terahertz waves according to the impedance matching theory. In addition, the wave absorber can change the Fermi level of the graphene and the Dirac semimetal by adding an excitation source, thereby realizing double adjustment of absorption frequency and realizing absorption of terahertz waves in a wider frequency range.
The graphene layer (1) is a single-layer graphene having a thickness h1 of 0.34nm, and has a length P of 7000 nm.
The dielectric layer (2) is silicon dioxide with the thickness h2 being 600nm, the dielectric layer (3) is silicon with the thickness h3 being 1200nm, and the length and the width of the silicon dioxide are P7000 nm.
Preferably, the dirac semimetal (4) is in the form of a "dart" -shaped block structure, with a thickness h4 of 600 nm.
The four dart points of the "dart" shape in fig. 3 are obtained by intersecting two by two four circles having a radius R1 of 2800nm, a center point at (2800,0), (0,2800), (-2800,0), (0, -2800), and a central circle radius R2 of 2000nm in a direction of plus or minus 45 ° from the x-axis.
FIG. 4 is an absorption characteristic curve of the terahertz wave in the invention when the Fermi levels of the Dirac semimetal and the graphene are 0.06eV and 0.3eV respectively. It can be seen that the two absorption peaks are respectively at 3.97THz and 7.08THz, and the absorptivity is above 95%. And due to the symmetry of the device, the wave absorber is insensitive to TE/TM polarized electromagnetic waves.
FIG. 5 is a graph of the absorption rate of the wave absorber with the change of the Fermi level of graphene when the Fermi level of the Dirac semimetal is 0.09 eV. When the graphene Fermi level is increased from 0.3eV to 0.8eV, the first absorption peak is blue-shifted from 3.96THz to 6.30THz, and the absorption rate is also increased from 90% to 99.6%; the second absorption peak blue-shifted from 9.35THz to 9.75THZ, with absorbance around 93%.
FIG. 6 is a graph of the absorption of the absorber as a function of the Fermi level of the Dirac semimetal at a Fermi level of 0.3eV for graphene. When the Fermi level of the Dirac semimetal is increased from 0.05eV to 0.09eV, the frequency of the first absorption peak is almost unchanged, and the absorptivity is over 90 percent; the second absorption peak blue-shifts from 6.05THz to 9.35THz, with an absorbance above 92%.
In combination with the above results analysis, it can be concluded that: according to the invention, the Fermi levels of the graphene and the Dirac semimetal can be changed, so that the efficient absorption of electromagnetic waves with the frequency of 3.96THz-9.75THz is realized, the absorption rates are all above 90%, and the absorption effects on TE/TM waves are the same.
Claims (6)
1. The utility model provides a full medium wave absorber based on graphite alkene and dirac semimetal which characterized in that: the wave absorber is composed of 4 layers of structures, and comprises the following components in sequence from bottom to top: the graphene layer (1), the dielectric layers (2) and (3) and the Dirac semimetal (4).
2. The all-dielectric wave absorber based on graphene and dirac semimetal as claimed in claim 1, wherein: the graphene layer (1) is a single-layer graphene having a thickness h1 of 0.34nm, and has a length P of 7000 nm.
3. The all-dielectric wave absorber based on graphene and dirac semimetal as claimed in claim 1, wherein: the dielectric layer (2) is silicon dioxide with the thickness h2 being 600nm, the dielectric layer (3) is silicon with the thickness h3 being 1200nm, and the length and the width of the silicon dioxide are P7000 nm.
4. The all-dielectric wave absorber based on graphene and dirac semimetal as claimed in claim 1, wherein: the dirac semimetal (4) is a 'dart' -shaped massive dirac semimetal, and its thickness h4 is 600 nm.
5. The all-dielectric wave absorber based on graphene and Dirac semimetals as claimed in claim 4, wherein: four dart points of a "dart" -shaped dirac semimetal are obtained by intersecting two by two four cylinders with radius R1 ═ 2800nm, circle centers at (2800,0), (0,2800), (-2800,0), (0, -2800), thickness h4 ═ 600nm, dispersed in directions at plus or minus 45 ° to the x axis, with central cylinder radius R2 ═ 2000nm, thickness h4 ═ 600 nm.
6. The all-dielectric wave absorber based on graphene and dirac semimetal as claimed in claim 1, wherein: the Fermi levels of the graphene and the Dirac semimetal can be respectively changed through external excitation, and the absorption frequency is adjusted in a double mode, so that a wider adjustable range is achieved.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111864405A (en) * | 2020-09-03 | 2020-10-30 | 浙江科技学院 | Absorber of two ring structure graphite alkene that split |
| CN112086758A (en) * | 2020-09-14 | 2020-12-15 | 重庆大学 | Double-control broadband terahertz wave absorber based on Dirac semimetal and water |
| CN115548691A (en) * | 2022-11-23 | 2022-12-30 | 云南农业大学 | Three-frequency-band double-tuned wave absorber based on Dirac semimetal and vanadium dioxide |
| CN115548690A (en) * | 2022-11-23 | 2022-12-30 | 云南农业大学 | Dual-tuned absorber based on dirac semimetal and strontium titanate |
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| CN112086758A (en) * | 2020-09-14 | 2020-12-15 | 重庆大学 | Double-control broadband terahertz wave absorber based on Dirac semimetal and water |
| CN115548691A (en) * | 2022-11-23 | 2022-12-30 | 云南农业大学 | Three-frequency-band double-tuned wave absorber based on Dirac semimetal and vanadium dioxide |
| CN115548690A (en) * | 2022-11-23 | 2022-12-30 | 云南农业大学 | Dual-tuned absorber based on dirac semimetal and strontium titanate |
| CN115548691B (en) * | 2022-11-23 | 2024-05-07 | 云南农业大学 | Tri-band double-tuning wave absorber based on Dirac semi-metal and vanadium dioxide |
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| CN111585040B (en) | 2022-03-15 |
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