CN111584469A - LED packaging structure and packaging method thereof - Google Patents
LED packaging structure and packaging method thereof Download PDFInfo
- Publication number
- CN111584469A CN111584469A CN202010303119.1A CN202010303119A CN111584469A CN 111584469 A CN111584469 A CN 111584469A CN 202010303119 A CN202010303119 A CN 202010303119A CN 111584469 A CN111584469 A CN 111584469A
- Authority
- CN
- China
- Prior art keywords
- height
- led
- sealing resin
- dam
- solder balls
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 13
- 229910000679 solder Inorganic materials 0.000 claims abstract description 41
- 229920005989 resin Polymers 0.000 claims abstract description 39
- 239000011347 resin Substances 0.000 claims abstract description 39
- 238000007789 sealing Methods 0.000 claims abstract description 32
- 239000011521 glass Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 claims description 5
- 229920001967 Metal rubber Polymers 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an LED packaging structure and a packaging method thereof, wherein an LED chip is reversely buckled into a sealing resin, so that the bottom of the LED chip is completely filled with the sealing resin without leaving a gap, and the height of a solder ball is increased and the longitudinal width ratio of the solder ball is increased by utilizing the elasticity of an elastic dam. The manufacturing method of the invention is simple and easy to implement, and the cost is lower.
Description
Technical Field
The invention relates to the field of semiconductor device packaging, in particular to an LED packaging structure and a packaging method thereof, and belongs to the H01L33/00 classification number.
Background
LED packaging is a necessary step for LED chip use. As shown in fig. 1, the LED package structure in the prior art often includes a COB substrate 1, a dam 2, an LED chip 3 and a fluorescent resin 5, where the COB substrate 1 often is a circuit board or an insulating substrate with a wiring pattern, the dam 2 is formed in a peripheral region of the COB substrate 1 by molding or injection molding, the LED chip 3 is inversely mounted on the COB substrate 1 through solder balls 4, and finally the LED chip 3 is sealed with the fluorescent resin 5 to prevent moisture corrosion. However, in the flip-chip method, as the chip size is gradually reduced, the pitch between the solder balls 4 is also gradually reduced, and preventing short circuit between the solder balls 4 is a technical problem to be solved, and in addition, the fluorescent resin 5 is filled from above the LED chip 3, the filling method cannot completely fill the bottom position of the LED chip 3 to form the gap 6, and the existence of the gap 6 is disadvantageous for the package.
Disclosure of Invention
Based on solving the above problems, the present invention provides an LED package structure, which includes:
a package substrate on which a wiring pattern is provided;
the elastic dam is arranged at the edge part of the packaging substrate and surrounds a cavity;
an LED chip that is flip-chip mounted on the wiring pattern;
the sealing resin is filled in the cavity, the height of the sealing resin is consistent with that of the elastic dam, and the light emitting surface of the LED chip is exposed;
an adhesive layer formed on the elastic dam, the sealing resin, and the LED chip;
fluorescent glass bonded to the bonding layer.
According to the embodiment of the invention, the material of the elastic box dam is rubber material, metal rubber, high-elasticity plastic and the like.
The invention also provides an integrated circuit packaging method, which comprises the following steps:
1) providing a rigid transparent carrier plate, supporting and bonding a fluorescent glass plate on the rigid transparent carrier plate, and bonding a transparent bonding layer on the fluorescent glass plate;
2) fixing a plurality of LED chips on the fluorescent glass through the transparent bonding layer, and enabling the light emitting surfaces of the LED chips to face the fluorescent glass;
3) forming solidified welding balls on the electrodes of the LED chips to obtain an LED chip structure on the fluorescent glass;
4) forming an elastic dam on the packaging substrate, wherein the elastic dam encloses a cavity and has a height h1, and the height h1 is approximately equal to the sum of the thickness of the LED chip and the height of the solder balls;
5) pouring sealing resin into the cavity, wherein the top surface of the sealing resin is arc-surface-shaped and is higher than the height h1 of the elastic dam, so that an elastic dam structure on the packaging substrate is obtained;
6) the LED chip structure on the fluorescent glass is reversely buckled to the elastic dam structure on the packaging substrate, wherein the solder balls and the LED chip are embedded into the sealing resin, and the solder balls are in physical contact with the wiring pattern on the packaging substrate;
7) applying a pressure F1 to the transparent carrier plate, and simultaneously heating to melt the solder balls, so that the height of the elastic dam 16 is reduced to h2, the height of the solder balls becomes d1, and h2< h 1;
8) applying a lifting force F2 to peel off the temporary carrier plate, wherein the lifting force F2 enables the height of the elastic dam to be h3 and the height of the solder ball to be d2, wherein h3> h2, and d2> d 1;
9) and stopping heating and cooling to normal temperature, so that the solder balls and the sealing resin are solidified, and the final LED packaging structure is obtained.
According to the embodiment of the invention, the fluorescent glass is provided with the first alignment mark, the packaging substrate is provided with the second alignment mark, and the alignment of the solder ball and the wiring pattern is realized by aligning the first alignment mark and the second alignment mark.
According to an embodiment of the invention, the elastic dam comprises at least one overflow opening, which in step 6) enables an outward overflow of excess sealing resin, and in step 8) enables a backflow of sealing resin into the cavity.
The invention has the following advantages: the LED chip is reversely buckled into the sealing resin, so that the bottom of the LED chip is also completely filled with the sealing resin without leaving a gap, and the height of the solder ball is increased and the longitudinal width ratio of the solder ball is increased by utilizing the elasticity of the elastic dam. The manufacturing method of the invention is simple and easy to implement, and the cost is lower.
Drawings
FIG. 1 is a cross-sectional view of a prior art LED package structure;
FIGS. 2-10 are schematic cross-sectional views of the LED packaging method of the present invention;
fig. 11 is a top view of fig. 10.
Detailed Description
The present invention is conceived to design an LED package structure that prevents short circuits between solder balls of an LED chip and can be completely filled with resin, and specific embodiments will be described below.
The invention adopts the technical scheme that resin is formed on fluorescent glass and then is reversely attached to an encapsulated COB substrate so as to realize complete resin filling and larger solder ball aspect ratio (ratio of height to width).
Referring to fig. 2, a rigid temporary carrier 10 is provided, wherein the temporary carrier 10 is a transparent substrate, preferably a glass substrate, for the reason that will be described in detail later, a fluorescent glass plate 11 is bonded on the temporary carrier 10, and a transparent adhesive layer 12 is bonded on the fluorescent glass plate 11. The fluorescent glass 11 can be obtained by using the existing fluorescent glass preparation method, and specifically, for example, the fluorescent material is doped in the glass, and the forming mode and the specific material thereof are not particularly limited. Preferably, the fluorescent glass 11 is a red fluorescent glass with a thickness of 100-200 μm. The transparent adhesive layer 12 may be a conventional transparent material having a certain adhesiveness, such as epoxy resin, silicone resin, etc. In addition, an alignment mark (not shown) is provided on the fluorescent glass 11.
Referring to fig. 3, a plurality of LED chips 13 are fixed on the fluorescent glass 11 by the transparent adhesive layer 12, and a light emitting surface of the LED chips 13 faces the fluorescent glass 11. The arrangement positions of the plurality of LED chips 13 should correspond to the wiring of the package substrate to realize the later flip-chip, the correspondence being realized by the alignment marks on the fluorescent glass 11.
Referring to fig. 4, solder balls 14 are formed on the electrodes of the plurality of LED chips 13, and the solder balls 14 are solidified, which is implemented using a solder ball mounting technique.
Referring to fig. 5, an elastic dam 16 is formed on the package substrate 15, and the elastic dam 16 is different from a rigid dam in the prior art, which is formed by using a resin material or a metal material, whereas the elastic dam 16 in the present application is made of a material having a certain elasticity, such as a rubber material, a metal rubber, a high elastic plastic, and the like. The flexible dam 16 has a height h1, the height h1 being approximately equal to the sum of the thickness of the LED chip 13 plus the height of the solder balls. The elastic dam 16 encloses a cavity 17, and the cavity 17 is used for accommodating the LED chip 13.
Referring to fig. 6, a sealing resin 18 is poured into the cavity 17, the sealing resin 18 does not contain phosphor material, the top surface of the sealing resin 18 is arc-shaped, and the height of the sealing resin 18 is higher than the height h1 of the elastic dam 17.
Referring to fig. 7 and 8, the LED-on-fluorescent-glass chip structure obtained in fig. 4 is flipped over to the elastic dam structure on the package substrate obtained in fig. 6, wherein the solder balls 14 and the LED chip 13 are embedded in the sealing resin 18, and the solder balls 14 are brought into physical contact with the wiring pattern on the package substrate 15. At the same time, a pressure F1 is applied to the temporary carrier 10, and at the same time, the solder balls 14 are melted by heating, at this time, due to the existence of the pressure F1, the height of the elastic dam 16 is reduced to h2, and the height of the solder balls 14 also becomes d1, at this time, h2< h 1.
Referring to fig. 9, a lifting force F2 is applied to peel off the temporary carrier 10, the lifting force F2 changes the height of the elastic dam 16 to h3, and the height of the solder balls 14 to d2, wherein h3> h2, and d2> d1, so that the height of the solder balls 14 is increased, the vertical width of the solder balls is large, and short circuit between the solder balls is prevented.
Referring to fig. 10, heating is stopped to normal temperature, so that the solder balls 14 and the sealing resin 18 are cured, and the final package structure is obtained.
Referring to fig. 11, another alignment mark 19 is also disposed on the package substrate 10 of the present invention, and the alignment mark 19 is used for aligning the temporary carrier 10 and the fluorescent glass with the alignment mark on the fluorescent glass 11, so as to align the solder balls 14 with the wiring pattern on the package substrate 10. Here, the temporary carrier 10 must be made a transparent substrate in order to facilitate alignment from the temporary carrier 10 side. Also, the elastic dam 16 includes at least one overflow port 20, and the overflow port 20 is used to allow excess sealing resin 18 to overflow outward in the reversing operation of fig. 7 and 8. In addition, the overflow port 20 can also realize the backflow of the sealing resin 18 into the cavity 17 when the lifting force F2 is applied.
In the LED packaging method as described above, the LED chip is turned upside down into the sealing resin so that the bottom of the LED chip is also completely filled with the sealing resin without leaving a gap, and the height of the solder ball is increased by the elasticity of the elastic dam, and the vertical width ratio of the solder ball is increased. The manufacturing method of the invention is simple and easy to implement, and the cost is lower.
Finally, it should be noted that: it should be understood that the above examples are only for clearly illustrating the present invention and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.
Claims (5)
1. An LED package structure, comprising:
a package substrate on which a wiring pattern is provided;
the elastic dam is arranged at the edge part of the packaging substrate and surrounds a cavity;
an LED chip that is flip-chip mounted on the wiring pattern;
the sealing resin is filled in the cavity, the height of the sealing resin is consistent with that of the elastic dam, and the light emitting surface of the LED chip is exposed;
an adhesive layer formed on the elastic dam, the sealing resin, and the LED chip;
fluorescent glass bonded to the bonding layer.
2. The LED package structure of claim 1, wherein: the elastic box dam is made of rubber materials, metal rubber, high-elasticity plastics and the like.
3. A method of packaging an integrated circuit, comprising the steps of:
1) providing a rigid transparent carrier plate, supporting and bonding a fluorescent glass plate on the rigid transparent carrier plate, and bonding a transparent bonding layer on the fluorescent glass plate;
2) fixing a plurality of LED chips on the fluorescent glass through the transparent bonding layer, and enabling the light emitting surfaces of the LED chips to face the fluorescent glass;
3) forming solidified welding balls on the electrodes of the LED chips to obtain an LED chip structure on the fluorescent glass;
4) forming an elastic dam on the packaging substrate, wherein the elastic dam encloses a cavity and has a height h1, and the height h1 is approximately equal to the sum of the thickness of the LED chip and the height of the solder balls;
5) pouring sealing resin into the cavity, wherein the top surface of the sealing resin is arc-surface-shaped and is higher than the height h1 of the elastic dam, so that an elastic dam structure on the packaging substrate is obtained;
6) the LED chip structure on the fluorescent glass is reversely buckled to the elastic dam structure on the packaging substrate, wherein the solder balls and the LED chip are embedded into the sealing resin, and the solder balls are in physical contact with the wiring pattern on the packaging substrate;
7) applying a pressure F1 to the transparent carrier plate, and simultaneously heating to melt the solder balls, so that the height of the elastic dam 16 is reduced to h2, the height of the solder balls becomes d1, and h2< h 1;
8) applying a lifting force F2 to peel off the temporary carrier plate, wherein the lifting force F2 enables the height of the elastic dam to be h3 and the height of the solder ball to be d2, wherein h3> h2, and d2> d 1;
9) and stopping heating and cooling to normal temperature, so that the solder balls and the sealing resin are solidified, and the final LED packaging structure is obtained.
4. The LED packaging method of claim 3, wherein: the fluorescent glass is provided with a first alignment mark, the packaging substrate is provided with a second alignment mark, and the alignment of the solder balls and the wiring patterns is realized by aligning the first alignment mark and the second alignment mark.
5. The LED packaging method of claim 3, wherein: the elastic dam comprises at least one overflow port, wherein in step 6) the overflow port realizes outward overflow of the redundant sealing resin, and in step 8) the overflow port realizes backflow of the sealing resin into the cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010303119.1A CN111584469A (en) | 2020-04-17 | 2020-04-17 | LED packaging structure and packaging method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010303119.1A CN111584469A (en) | 2020-04-17 | 2020-04-17 | LED packaging structure and packaging method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111584469A true CN111584469A (en) | 2020-08-25 |
Family
ID=72122405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010303119.1A Withdrawn CN111584469A (en) | 2020-04-17 | 2020-04-17 | LED packaging structure and packaging method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111584469A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023000242A1 (en) * | 2021-07-22 | 2023-01-26 | 重庆康佳光电技术研究院有限公司 | Circuit board assembly, light emitting assembly, and manufacturing method therefor |
| JP7448833B2 (en) | 2022-03-17 | 2024-03-13 | 日亜化学工業株式会社 | Manufacturing method and inspection method for light emitting device |
-
2020
- 2020-04-17 CN CN202010303119.1A patent/CN111584469A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023000242A1 (en) * | 2021-07-22 | 2023-01-26 | 重庆康佳光电技术研究院有限公司 | Circuit board assembly, light emitting assembly, and manufacturing method therefor |
| JP7448833B2 (en) | 2022-03-17 | 2024-03-13 | 日亜化学工業株式会社 | Manufacturing method and inspection method for light emitting device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI415228B (en) | Semiconductor package structures, flip chip packages, and methods for manufacturing semiconductor flip chip package | |
| US7520052B2 (en) | Method of manufacturing a semiconductor device | |
| US9087924B2 (en) | Semiconductor device with resin mold | |
| JP3163419B2 (en) | Electronic component manufacturing method | |
| JP5497469B2 (en) | Light emitting device and manufacturing method thereof | |
| KR101398404B1 (en) | Plastic overmolded packages with mechanically decoupled lid attach attachment | |
| US7675186B2 (en) | IC package with a protective encapsulant and a stiffening encapsulant | |
| KR20020063131A (en) | Semiconductor device and fabrication method thereof | |
| KR20120010185A (en) | Circuit apparatus and method for manufacturing the same | |
| CN111584469A (en) | LED packaging structure and packaging method thereof | |
| US6593652B2 (en) | Semiconductor device reinforced by a highly elastic member made of a synthetic resin | |
| CN111584470A (en) | LED packaging structure and packaging method thereof | |
| JP5702481B2 (en) | Light emitting device and manufacturing method thereof | |
| CN114823573B (en) | Heat dissipation type packaging structure and forming method thereof | |
| US8050049B2 (en) | Semiconductor device | |
| CN101499444B (en) | Cooling type multi-punch semiconductor packaging construction | |
| CN112310006A (en) | Encapsulated package with carrier, laminate and member therebetween | |
| TWI440146B (en) | Semiconductor package having internal heatsink prevented from contamination of mold flash | |
| KR20050120138A (en) | Semiconductor package preventing a chip from warpage defect | |
| KR20070007607A (en) | Resin molding type bga package having solder resist dam | |
| CN113745387A (en) | Display device and method for manufacturing the same | |
| TWI464844B (en) | Flip-chip carrier and packaging method of mps-c2 package utilized from the same | |
| JP3344006B2 (en) | Printed circuit board with chip and method of manufacturing the same | |
| JP3298627B2 (en) | Semiconductor device and method of reinforcing solder ball base for connection | |
| CN115050658A (en) | Chip on film packaging method and chip on film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20200825 |
|
| WW01 | Invention patent application withdrawn after publication |