CN111584375A - Semiconductor package and preparation method thereof - Google Patents
Semiconductor package and preparation method thereof Download PDFInfo
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- CN111584375A CN111584375A CN202010437601.4A CN202010437601A CN111584375A CN 111584375 A CN111584375 A CN 111584375A CN 202010437601 A CN202010437601 A CN 202010437601A CN 111584375 A CN111584375 A CN 111584375A
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- metal copper
- polymethyl methacrylate
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 179
- 229910052751 metal Inorganic materials 0.000 claims abstract description 167
- 239000002184 metal Substances 0.000 claims abstract description 167
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 129
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 129
- 229910052802 copper Inorganic materials 0.000 claims abstract description 127
- 239000010949 copper Substances 0.000 claims abstract description 127
- 239000002070 nanowire Substances 0.000 claims abstract description 126
- 238000000034 method Methods 0.000 claims abstract description 59
- 238000002161 passivation Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229920003023 plastic Polymers 0.000 claims abstract description 11
- 239000004033 plastic Substances 0.000 claims abstract description 11
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 183
- 238000004528 spin coating Methods 0.000 claims description 91
- 239000000725 suspension Substances 0.000 claims description 83
- 238000000137 annealing Methods 0.000 claims description 67
- 238000010438 heat treatment Methods 0.000 claims description 65
- 239000012298 atmosphere Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000004806 packaging method and process Methods 0.000 claims description 13
- 238000000465 moulding Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000010408 film Substances 0.000 description 55
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Formation Of Insulating Films (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention relates to a semiconductor package and a preparation method thereof, wherein the method comprises the following steps: the method comprises the steps of arranging a semiconductor chip on a carrier substrate, sequentially forming a first polymethyl methacrylate passivation film, a first metal copper nanowire film, a second polymethyl methacrylate passivation film, a second metal copper nanowire film, a third polymethyl methacrylate passivation film, a third metal copper nanowire film, a fourth polymethyl methacrylate passivation film and a plastic package layer on the carrier substrate carrying the semiconductor chip, removing the carrier substrate, and forming a redistribution layer on the plastic package layer and the semiconductor chip to enable the semiconductor chip to be electrically connected with the redistribution layer.
Description
Technical Field
The invention relates to the field of semiconductor packaging, in particular to a semiconductor package and a preparation method thereof.
Background
The semiconductor production flow consists of wafer manufacturing, wafer testing, chip packaging and post-packaging testing. After plastic packaging, a series of operations such as post-curing, rib cutting and forming, electroplating, printing and the like are performed. The typical packaging process flow is as follows: scribing, loading, bonding, plastic packaging, deburring, electroplating, printing, rib cutting and forming, appearance inspection, finished product testing and packaging and shipping. A conductive layer is manufactured on the surface of a package by a spraying or sputtering method after the package of the existing commonly used chip-level electromagnetic interference shielding structure is finished. The chip-level process is time-consuming; and the surface after packaging is rough, so that the continuity of the conducting layer is difficult to ensure.
Disclosure of Invention
The present invention is directed to overcoming the above-mentioned deficiencies of the prior art and to providing a semiconductor package and a method for manufacturing the same.
In order to achieve the purpose, the invention adopts the technical scheme that:
a method of manufacturing a semiconductor package, comprising the steps of:
1) providing a carrier substrate, arranging a temporary bonding layer on the carrier substrate, and then arranging a semiconductor chip on the temporary bonding layer.
2) And then spin-coating a first polymethyl methacrylate-containing toluene solution on the carrier substrate carrying the semiconductor chip, wherein the concentration of polymethyl methacrylate in the first polymethyl methacrylate-containing toluene solution is 10-15mg/ml, and then carrying out annealing treatment to form a first polymethyl methacrylate passivation film.
3) And then spin-coating a first suspension containing metal copper nanowires on the first polymethyl methacrylate passivation film, wherein the concentration of the metal copper nanowires in the first suspension containing the metal copper nanowires is 10-20mg/ml, and then carrying out annealing treatment to form a first metal copper nanowire film.
4) And then spin-coating a second polymethyl methacrylate-containing toluene solution on the first metal copper nanowire film, wherein the concentration of polymethyl methacrylate in the second polymethyl methacrylate-containing toluene solution is 5-10mg/ml, and then carrying out annealing treatment to form a second polymethyl methacrylate passivation film.
5) And then spin-coating a second suspension containing metal copper nanowires on the second polymethyl methacrylate passivation film, wherein the concentration of the metal copper nanowires in the second suspension containing the metal copper nanowires is 5-10mg/ml, and then carrying out annealing treatment to form a second metal copper nanowire film.
6) And then spin-coating a third polymethyl methacrylate-containing toluene solution on the second metal copper nanowire film, wherein the concentration of polymethyl methacrylate in the third polymethyl methacrylate-containing toluene solution is 20-30mg/ml, and then performing annealing treatment to form a third polymethyl methacrylate passivation film.
7) And then spin-coating a third suspension containing metal copper nanowires on the third polymethyl methacrylate passivation film, wherein the concentration of the metal copper nanowires in the third suspension containing the metal copper nanowires is 15-25mg/ml, and then carrying out annealing treatment to form a third metal copper nanowire film.
8) And then spin-coating a fourth polymethyl methacrylate-containing toluene solution on the third metal copper nanowire film, wherein the concentration of polymethyl methacrylate in the fourth polymethyl methacrylate-containing toluene solution is 3-6mg/ml, and then performing annealing treatment to form a fourth polymethyl methacrylate passivation film.
9) And then forming a plastic packaging layer on the fourth polymethyl methacrylate passivation film, wherein the plastic packaging layer covers the carrier substrate and the semiconductor chip.
10) The carrier substrate is then removed, and a redistribution layer is then formed over the molding compound and the semiconductor chip such that the semiconductor chip is electrically connected to the redistribution layer.
Preferably, in the step 2), the rotation speed of the first toluene solution containing polymethyl methacrylate is 2000-3000 r/min, the spin coating time is 50-200 s, and the specific process of the annealing treatment is as follows: firstly, heat treatment is carried out for 5-10 minutes at 50-60 ℃, then the temperature is raised to 90-100 ℃, and heat treatment is carried out for 10-20 minutes at 90-100 ℃.
Preferably, in the step 3), the diameter of the metal copper nanowire in the first suspension containing the metal copper nanowire is 30-90 nm, the length of the metal copper nanowire in the first suspension containing the metal copper nanowire is 3-8 μm, the rotation speed of spin-coating the first suspension containing the metal copper nanowire is 5000-7000 rpm, the spin-coating time is 60-150 seconds, and the specific process of the annealing treatment is as follows: in inert atmosphere, heat treating at 60-70 deg.C for 5-10 min, heating to 80-100 deg.C, and heat treating at 80-100 deg.C for 5-20 min.
Preferably, in the step 4), the rotation speed of the spin coating of the second toluene solution containing polymethyl methacrylate is 4000-: firstly, heat treatment is carried out for 3-6 minutes at 60-70 ℃, then the temperature is raised to 90-100 ℃, and heat treatment is carried out for 5-10 minutes at 90-100 ℃.
Preferably, in the step 5), the diameter of the metal copper nanowire in the second suspension containing the metal copper nanowire is 100-150 nm, the length of the metal copper nanowire in the second suspension containing the metal copper nanowire is 10-20 μm, the rotation speed of spin-coating the second suspension containing the metal copper nanowire is 4000-5500 rpm, the spin-coating time is 80-200 seconds, and the specific process of the annealing treatment is as follows: in inert atmosphere, heat treating at 70-80 deg.C for 10-15 min, heating to 90-110 deg.C, and heat treating at 90-110 deg.C for 10-20 min.
Preferably, in the step 6), the rotation speed of the third toluene solution containing polymethyl methacrylate is 3000-4000 rpm, the spin coating time is 50-100 seconds, and the specific process of the annealing treatment is as follows: firstly, heat treatment is carried out for 5-10 minutes at 50-60 ℃, then the temperature is raised to 90-100 ℃, and heat treatment is carried out for 10-30 minutes at 90-100 ℃.
Preferably, in the step 7), the diameter of the metal copper nanowire in the third suspension containing the metal copper nanowire is 180-250 nm, the length of the metal copper nanowire in the third suspension containing the metal copper nanowire is 20-30 μm, the rotation speed of spin-coating the third suspension containing the metal copper nanowire is 3500-5000 r/min, the spin-coating time is 60-180 s, and the specific process of the annealing treatment is as follows: in inert atmosphere, heat treating at 70-80 deg.C for 15-20 min, heating to 90-100 deg.C, and heat treating at 90-100 deg.C for 20-40 min.
Preferably, in the step 8), the rotation speed of the spin coating of the fourth toluene solution containing polymethyl methacrylate is 5000-7000 rpm, the spin coating time is 60-120 seconds, and the specific process of the annealing treatment is as follows: firstly, heat treatment is carried out for 5-10 minutes at 50-60 ℃, then the temperature is raised to 100-120 ℃, and heat treatment is carried out for 10-30 minutes at 100-120 ℃.
The invention also provides a semiconductor package prepared by the method of the claims.
Compared with the prior art, the invention has the following advantages:
in the preparation process of the semiconductor package, the semiconductor chip is packaged by utilizing the polymethyl methacrylate, the polymethyl methacrylate layer is formed in a spin coating mode, a uniform and compact organic insulating layer can be formed on the semiconductor chip, the metal copper nanowire layer formed subsequently can be prevented from being in direct contact with the semiconductor chip, the metal copper nanowire layer is formed in a spin coating mode, the electromagnetic shielding layers distributed uniformly can be formed, and the semiconductor package structure with good continuity and excellent electromagnetic shielding performance can be formed by alternately overlapping the polymethyl methacrylate layer and the electromagnetic shielding layers.
Drawings
Fig. 1-10 are schematic structural diagrams of steps in the semiconductor package formation process of the present invention.
Detailed Description
Various exemplary embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present disclosure unless specifically stated otherwise. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. That is, the structures and methods herein are shown by way of example to illustrate different embodiments of the structures and methods of the present disclosure. Those skilled in the art will understand, however, that they are merely illustrative of exemplary ways in which the disclosure may be practiced and not exhaustive. Furthermore, the figures are not necessarily to scale, some features may be exaggerated to show details of particular components.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
A method of manufacturing a semiconductor package, comprising the steps of:
1) providing a carrier substrate, arranging a temporary bonding layer on the carrier substrate, and then arranging a semiconductor chip on the temporary bonding layer.
2) And then spin-coating a first polymethyl methacrylate-containing toluene solution on the carrier substrate carrying the semiconductor chip, wherein the concentration of polymethyl methacrylate in the first polymethyl methacrylate-containing toluene solution is 10-15mg/ml, and then carrying out annealing treatment to form a first polymethyl methacrylate passivation film.
3) And then spin-coating a first suspension containing metal copper nanowires on the first polymethyl methacrylate passivation film, wherein the concentration of the metal copper nanowires in the first suspension containing the metal copper nanowires is 10-20mg/ml, and then carrying out annealing treatment to form a first metal copper nanowire film.
4) And then spin-coating a second polymethyl methacrylate-containing toluene solution on the first metal copper nanowire film, wherein the concentration of polymethyl methacrylate in the second polymethyl methacrylate-containing toluene solution is 5-10mg/ml, and then carrying out annealing treatment to form a second polymethyl methacrylate passivation film.
5) And then spin-coating a second suspension containing metal copper nanowires on the second polymethyl methacrylate passivation film, wherein the concentration of the metal copper nanowires in the second suspension containing the metal copper nanowires is 5-10mg/ml, and then carrying out annealing treatment to form a second metal copper nanowire film.
6) And then spin-coating a third polymethyl methacrylate-containing toluene solution on the second metal copper nanowire film, wherein the concentration of polymethyl methacrylate in the third polymethyl methacrylate-containing toluene solution is 20-30mg/ml, and then performing annealing treatment to form a third polymethyl methacrylate passivation film.
7) And then spin-coating a third suspension containing metal copper nanowires on the third polymethyl methacrylate passivation film, wherein the concentration of the metal copper nanowires in the third suspension containing the metal copper nanowires is 15-25mg/ml, and then carrying out annealing treatment to form a third metal copper nanowire film.
8) And then spin-coating a fourth polymethyl methacrylate-containing toluene solution on the third metal copper nanowire film, wherein the concentration of polymethyl methacrylate in the fourth polymethyl methacrylate-containing toluene solution is 3-6mg/ml, and then performing annealing treatment to form a fourth polymethyl methacrylate passivation film.
9) And then forming a plastic packaging layer on the fourth polymethyl methacrylate passivation film, wherein the plastic packaging layer covers the carrier substrate and the semiconductor chip.
10) The carrier substrate is then removed, and a redistribution layer is then formed over the molding compound and the semiconductor chip such that the semiconductor chip is electrically connected to the redistribution layer.
Further, in the step 2), the rotation speed of the first toluene solution containing polymethyl methacrylate is 2000-3000 r/min, the spin coating time is 50-200 seconds, and the specific process of the annealing treatment is as follows: firstly, heat treatment is carried out for 5-10 minutes at 50-60 ℃, then the temperature is raised to 90-100 ℃, and heat treatment is carried out for 10-20 minutes at 90-100 ℃.
Further, in the step 3), the diameter of the metal copper nanowire in the first suspension containing the metal copper nanowire is 30-90 nm, the length of the metal copper nanowire in the first suspension containing the metal copper nanowire is 3-8 μm, the rotation speed of spin-coating the first suspension containing the metal copper nanowire is 5000-7000 rpm, the spin-coating time is 60-150 seconds, and the specific process of the annealing treatment is as follows: in inert atmosphere, heat treating at 60-70 deg.C for 5-10 min, heating to 80-100 deg.C, and heat treating at 80-100 deg.C for 5-20 min.
Further, in the step 4), the rotation speed of spin coating the second toluene solution containing polymethyl methacrylate is 4000-: firstly, heat treatment is carried out for 3-6 minutes at 60-70 ℃, then the temperature is raised to 90-100 ℃, and heat treatment is carried out for 5-10 minutes at 90-100 ℃.
Further, in the step 5), the diameter of the metal copper nanowire in the second suspension containing the metal copper nanowire is 100-150 nm, the length of the metal copper nanowire in the second suspension containing the metal copper nanowire is 10-20 μm, the rotation speed of spin-coating the second suspension containing the metal copper nanowire is 4000-5500 rpm, the spin-coating time is 80-200 seconds, and the specific process of the annealing treatment is as follows: in inert atmosphere, heat treating at 70-80 deg.C for 10-15 min, heating to 90-110 deg.C, and heat treating at 90-110 deg.C for 10-20 min.
Further, in the step 6), the rotation speed of the third toluene solution containing polymethyl methacrylate is 3000-4000 rpm, the spin coating time is 50-100 seconds, and the specific process of the annealing treatment is as follows: firstly, heat treatment is carried out for 5-10 minutes at 50-60 ℃, then the temperature is raised to 90-100 ℃, and heat treatment is carried out for 10-30 minutes at 90-100 ℃.
Further, in the step 7), the diameter of the metal copper nanowire in the third suspension containing the metal copper nanowire is 180-: in inert atmosphere, heat treating at 70-80 deg.C for 15-20 min, heating to 90-100 deg.C, and heat treating at 90-100 deg.C for 20-40 min.
Further, in the step 8), the rotation speed of the fourth toluene solution containing polymethyl methacrylate is 5000-7000 rpm, the spin coating time is 60-120 seconds, and the specific process of the annealing treatment is as follows: firstly, heat treatment is carried out for 5-10 minutes at 50-60 ℃, then the temperature is raised to 100-120 ℃, and heat treatment is carried out for 10-30 minutes at 100-120 ℃.
The invention also provides a semiconductor package prepared by the method of the claims.
Please refer to fig. 1 to 10. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
A method of manufacturing a semiconductor package according to an exemplary embodiment of the present disclosure is described below with reference to fig. 1 to 10.
As shown in fig. 1, in step 1), a carrier substrate 1 is provided, a temporary bonding layer 2 is disposed on the carrier substrate 1, and then a semiconductor chip 3 is disposed on the temporary bonding layer 2.
The carrier substrate 1 may be a glass carrier substrate, a ceramic carrier substrate, a silicon carrier substrate, a PET resin substrate or a metal carrier substrate, and the temporary bonding layer 2 may lose its adhesiveness under ultraviolet irradiation or high-temperature heating conditions, thereby facilitating the peeling of the semiconductor chip 3.
As shown in fig. 2, in step 2), a first polymethyl methacrylate-containing toluene solution in which the concentration of polymethyl methacrylate is 10 to 15mg/ml is spin-coated on the carrier substrate 1 carrying the semiconductor chip 3, followed by annealing treatment to form a first polymethyl methacrylate passivation film 4.
Wherein, in the step 2), the rotation speed of the first toluene solution containing polymethyl methacrylate is 2000-3000 r/min, the spin coating time is 50-200 s, and the specific process of the annealing treatment is as follows: firstly, heat treatment is carried out for 5-10 minutes at 50-60 ℃, then the temperature is raised to 90-100 ℃, and heat treatment is carried out for 10-20 minutes at 90-100 ℃.
In a specific embodiment, the concentration of the polymethyl methacrylate in the first toluene solution containing polymethyl methacrylate is preferably 12-14mg/ml, and more preferably 13mg/ml, the rotation speed of spin-coating the first toluene solution containing polymethyl methacrylate is 2300-2700 rpm, the spin-coating time is 80-120 seconds, and the specific process of the annealing treatment is as follows: firstly, carrying out heat treatment at 55-60 ℃ for 7-10 minutes, then heating to 95-100 ℃, and carrying out heat treatment at 95-100 ℃ for 15-20 minutes, wherein the rotation speed of spin coating the first polymethyl methacrylate-containing toluene solution is 2500 rpm, the spin coating time is 100 seconds, and the annealing treatment specifically comprises the following steps: the heat treatment was carried out at 58 ℃ for 8 minutes, followed by heating to 98 ℃ and heat treatment at 98 ℃ for 17 minutes. According to the invention, a uniform first polymethyl methacrylate passivation film 4 is formed on the carrier substrate 1 by optimizing a specific process of spin-coating a first toluene solution containing polymethyl methacrylate, the first polymethyl methacrylate passivation film 4 covers the semiconductor chip 3, the first polymethyl methacrylate passivation film 4 with a proper thickness is obtained by optimizing various process parameters, so that the surface of the semiconductor chip 3 is passivated by the first polymethyl methacrylate passivation film 4, and the solvent can be rapidly volatilized by optimizing specific conditions of annealing treatment and by a staged annealing mode, so that the formation of the passivation film is facilitated.
As shown in fig. 3, in step 3), a first suspension containing metallic copper nanowires is spin-coated on the first polymethyl methacrylate passivation film 4, wherein the concentration of the metallic copper nanowires in the first suspension containing the metallic copper nanowires is 10-20mg/ml, and then annealing treatment is performed to form a first metallic copper nanowire film 5.
Wherein, in the step 3), the diameter of the metal copper nanowire in the first suspension containing the metal copper nanowire is 30-90 nm, the length of the metal copper nanowire in the first suspension containing the metal copper nanowire is 3-8 μm, the rotating speed of spin-coating the first suspension containing the metal copper nanowire is 5000-7000 r/min, the spin-coating time is 60-150 seconds, and the specific process of the annealing treatment is as follows: in inert atmosphere, heat treating at 60-70 deg.C for 5-10 min, heating to 80-100 deg.C, and heat treating at 80-100 deg.C for 5-20 min.
In a specific embodiment, the concentration of the metal copper nanowires in the first suspension containing the metal copper nanowires is 12-18mg/ml, the diameter of the metal copper nanowires in the first suspension containing the metal copper nanowires is 50-80 nm, the length of the metal copper nanowires in the first suspension containing the metal copper nanowires is 4-7 μm, the rotation speed of spin-coating the first suspension containing the metal copper nanowires is 5500-: in inert atmosphere or nitrogen atmosphere, heat treating at 62-68 deg.C for 6-9 min, heating to 85-95 deg.C, and heat treating at 85-95 deg.C for 10-20 min. More preferably, the concentration of the metal copper nanowires in the first suspension containing the metal copper nanowires is 15mg/ml, the diameter of the metal copper nanowires in the first suspension containing the metal copper nanowires is 60-70 nm, the length of the metal copper nanowires in the first suspension containing the metal copper nanowires is 5-6 μm, the rotation speed of spin-coating the first suspension containing the metal copper nanowires is 6000 rpm, the spin-coating time is 100 seconds, and the specific process of the annealing treatment is as follows: in an inert atmosphere, the heat treatment may be carried out at 65 ℃ for 8 minutes, then at 90 ℃ for 15 minutes, under a nitrogen atmosphere. According to the invention, a first metal copper nanowire film 5 is formed on the first polymethyl methacrylate passivation film 4 by optimizing a specific process of spin-coating a first suspension containing metal copper nanowires, the first metal copper nanowire film 5 is uniformly distributed, an electromagnetic shielding effect can be achieved, and the solvent can be rapidly volatilized by optimizing specific conditions of annealing treatment and by a staged annealing mode, so that the formation of the metal copper nanowire film is facilitated.
As shown in fig. 4, in step 4), a second polymethyl methacrylate-containing toluene solution is spin-coated on the first metallic copper nanowire thin film 5, wherein the concentration of polymethyl methacrylate in the second polymethyl methacrylate-containing toluene solution is 5-10mg/ml, followed by annealing treatment, to form a second polymethyl methacrylate passivation thin film 6.
Wherein, in the step 4), the rotation speed of spin coating the second toluene solution containing polymethyl methacrylate is 4000-: firstly, heat treatment is carried out for 3-6 minutes at 60-70 ℃, then the temperature is raised to 90-100 ℃, and heat treatment is carried out for 5-10 minutes at 90-100 ℃.
Specifically, in a preferred embodiment, the concentration of the polymethyl methacrylate in the second toluene solution containing polymethyl methacrylate is 6-9mg/ml, the rotation speed of spin-coating the second toluene solution containing polymethyl methacrylate is 4200 and 4800 r/min, the spin-coating time is 60-90 seconds, and the specific process of the annealing treatment is as follows: firstly, heat treatment is carried out for 5-6 minutes at 65-70 ℃, then the temperature is raised to 93-99 ℃, and heat treatment is carried out for 5-10 minutes at 93-99 ℃. More specifically, the concentration of the polymethyl methacrylate in the second toluene solution containing polymethyl methacrylate is 8mg/ml, the rotation speed of spin-coating the second toluene solution containing polymethyl methacrylate is 4600 rpm, the spin-coating time is 75 seconds, and the specific process of the annealing treatment is as follows: first, heat treatment was carried out at 70 ℃ for 6 minutes, then, at 99 ℃ for 8 minutes.
As shown in fig. 5, in step 5), a second suspension containing metallic copper nanowires is spin-coated on the second polymethyl methacrylate passivation film 6, wherein the concentration of the metallic copper nanowires in the second suspension containing the metallic copper nanowires is 5-10mg/ml, and then annealing treatment is performed to form a second metallic copper nanowire film 7.
Wherein, in the step 5), the diameter of the metal copper nanowire in the second suspension containing the metal copper nanowire is 100-150 nm, the length of the metal copper nanowire in the second suspension containing the metal copper nanowire is 10-20 μm, the rotation speed of spin-coating the second suspension containing the metal copper nanowire is 4000-5500 r/min, the spin-coating time is 80-200 s, and the specific process of the annealing treatment is as follows: in inert atmosphere, heat treating at 70-80 deg.C for 10-15 min, heating to 90-110 deg.C, and heat treating at 90-110 deg.C for 10-20 min.
Specifically, in a preferred embodiment, the concentration of the metal copper nanowire in the second suspension containing the metal copper nanowire is 6-9mg/ml, the diameter of the metal copper nanowire in the second suspension containing the metal copper nanowire is 110-: in an inert atmosphere, firstly, the heat treatment is carried out for 12-15 minutes at 75-80 ℃, then the temperature is raised to 110 ℃ at 100-. More specifically, the concentration of the metal copper nanowire in the second suspension containing the metal copper nanowire is 8mg/ml, the diameter of the metal copper nanowire in the second suspension containing the metal copper nanowire is 120-140 nm, the length of the metal copper nanowire in the second suspension containing the metal copper nanowire is 13-16 μm, the rotation speed of spin-coating the second suspension containing the metal copper nanowire is 4800 rpm, the spin-coating time is 120 seconds, and the specific process of the annealing treatment is as follows: the heat treatment was carried out in an inert atmosphere at 78 ℃ for 14 minutes, at 105 ℃ for 18 minutes, and at a temperature of 105 ℃. By setting the diameter and the length of the metal copper nanowire in the second metal copper nanowire-containing suspension to be larger than those of the metal copper nanowire in the first metal copper nanowire-containing suspension, the gap between the diameters of the adjacent metal copper nanowires in the first metal copper nanowire film 5 can be shielded by the second metal copper nanowire film 7.
As shown in fig. 6, in step 6), a third toluene solution containing polymethyl methacrylate is spin-coated on the second metallic copper nanowire film 7, wherein the concentration of polymethyl methacrylate in the third toluene solution containing polymethyl methacrylate is 20-30mg/ml, and then annealing treatment is performed to form a third polymethyl methacrylate passivation film 8.
In the step 6), the rotation speed of the third toluene solution containing polymethyl methacrylate is 3000-4000 rpm, the spin coating time is 50-100 seconds, and the specific process of the annealing treatment is as follows: firstly, heat treatment is carried out for 5-10 minutes at 50-60 ℃, then the temperature is raised to 90-100 ℃, and heat treatment is carried out for 10-30 minutes at 90-100 ℃.
In a specific embodiment, the concentration of the polymethyl methacrylate in the third toluene solution containing polymethyl methacrylate is 23-26mg/ml, the rotation speed of spin-coating the third toluene solution containing polymethyl methacrylate is 3200-3600 rpm, the spin-coating time is 80-100 seconds, and the specific process of the annealing treatment is as follows: firstly, heat treatment is carried out for 5-10 minutes at 55-60 ℃, then the temperature is raised to 95-100 ℃, and heat treatment is carried out for 20-30 minutes at 95-100 ℃. More specifically, the concentration of the polymethyl methacrylate in the third toluene solution containing polymethyl methacrylate is 23-26mg/ml, the rotation speed of spin-coating the third toluene solution containing polymethyl methacrylate is 3400 rpm, the spin-coating time is 90 seconds, and the specific process of the annealing treatment is as follows: first, heat treatment was carried out at 60 ℃ for 8 minutes, then, at 100 ℃ for 25 minutes. To form a thicker third passive film 8 of methylmethacrylate.
As shown in fig. 7, in step 7), a third suspension containing metallic copper nanowires is spin-coated on the third polymethyl methacrylate passivation film 8, wherein the concentration of the metallic copper nanowires in the third suspension containing the metallic copper nanowires is 15-25mg/ml, and then annealing treatment is performed to form a third metallic copper nanowire film 9.
Wherein, in the step 7), the diameter of the metal copper nanowire in the suspension containing the metal copper nanowire is 180-250 nm, the length of the metal copper nanowire in the suspension containing the metal copper nanowire is 20-30 μm, the rotation speed of spin-coating the suspension containing the metal copper nanowire is 3500-5000 r/min, the spin-coating time is 60-180 s, and the specific process of the annealing treatment is as follows: in inert atmosphere, heat treating at 70-80 deg.C for 15-20 min, heating to 90-100 deg.C, and heat treating at 90-100 deg.C for 20-40 min.
In a specific embodiment, the concentration of the metal copper nanowire in the third suspension containing the metal copper nanowire is 18-23mg/ml, the diameter of the metal copper nanowire in the third suspension containing the metal copper nanowire is 200-250 nm, the length of the metal copper nanowire in the third suspension containing the metal copper nanowire is 24-30 μm, the rotation speed of spin-coating the third suspension containing the metal copper nanowire is 4000-5000 rpm, the spin-coating time is 120-180 seconds, and the specific process of the annealing treatment is as follows: in inert atmosphere, firstly, heat-treating at 74-80 ℃ for 15-20 minutes, then heating to 95-100 ℃, and heat-treating at 95-100 ℃ for 25-40 minutes; more specifically, the concentration of the metal copper nanowire in the third suspension containing the metal copper nanowire is 20mg/ml, the diameter of the metal copper nanowire in the third suspension containing the metal copper nanowire is 220-250 nm, the length of the metal copper nanowire in the third suspension containing the metal copper nanowire is 26-30 μm, the rotation speed of spin-coating the third suspension containing the metal copper nanowire is 4500 rpm, the spin-coating time is 150 seconds, and the specific process of the annealing treatment is as follows: the heat treatment was carried out in an inert atmosphere at 78 ℃ for 18 minutes, followed by heating to 98 ℃ for 35 minutes at 98 ℃.
In the present invention, the annealing treatment for forming each metal copper nanowire thin film may be performed in a nitrogen atmosphere. The first metal copper nanowire film, the second metal copper nanowire film and the third metal copper nanowire film are optimized to form the laminated electromagnetic shielding layer, so that the semiconductor package has excellent electromagnetic shielding performance.
As shown in fig. 8, in step 8), a fourth polymethyl methacrylate-containing toluene solution is spin-coated on the third metallic copper nanowire film 9, wherein the concentration of polymethyl methacrylate in the fourth polymethyl methacrylate-containing toluene solution is 3-6mg/ml, followed by annealing, to form a fourth polymethyl methacrylate passivation film 10.
Wherein, in the step 8), the rotation speed of the spin coating of the fourth toluene solution containing polymethyl methacrylate is 5000-7000 rpm, the spin coating time is 60-120 seconds, and the specific process of the annealing treatment is as follows: firstly, heat treatment is carried out for 5-10 minutes at 50-60 ℃, then the temperature is raised to 100-120 ℃, and heat treatment is carried out for 10-30 minutes at 100-120 ℃.
In a specific embodiment, the concentration of the polymethyl methacrylate in the fourth toluene solution containing polymethyl methacrylate is 5mg/ml, the rotation speed of spin-coating the fourth toluene solution containing polymethyl methacrylate is 6000 rpm, the spin-coating time is 90 seconds, and the specific process of the annealing treatment is as follows: first, heat treatment was carried out at 55 ℃ for 8 minutes, then, at 110 ℃ for 200 minutes.
As shown in fig. 9, in step 9), a molding layer 11 is formed on the fourth pmma passivation film 10, and the molding layer 11 covers the carrier substrate 1 and the semiconductor chip 3. The plastic sealing layer 11 is made of epoxy resin and is formed by compression molding, transfer molding or liquid sealant molding.
As shown in fig. 10, in step 10), the carrier substrate 1 is then removed, and a redistribution layer 12 is then formed on the molding layer 11 and the semiconductor chip 3, so that the semiconductor chip 3 is electrically connected to the redistribution layer 12.
In particular, the redistribution layer 12 includes a dielectric layer and a patterned metal layer. In a specific embodiment, the dielectric layer is formed by deposition through a PECVD, ALD or PVD process, the material of the dielectric layer may be one or more of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, zirconium oxide and tantalum oxide, the patterned metal layer may be formed by thermal evaporation, magnetron sputtering, electroplating or chemical plating, and the material of the patterned metal layer is one or a combination of two or more of titanium, nickel, gold, palladium, silver, copper and aluminum.
The invention also provides a semiconductor package prepared by the method of the claims.
In the preparation process of the semiconductor package, the semiconductor chip is packaged by utilizing the polymethyl methacrylate, the polymethyl methacrylate layer is formed in a spin coating mode, a uniform and compact organic insulating layer can be formed on the semiconductor chip, the metal copper nanowire layer formed subsequently can be prevented from being in direct contact with the semiconductor chip, the metal copper nanowire layer is formed in a spin coating mode, the electromagnetic shielding layers distributed uniformly can be formed, and the semiconductor package structure with good continuity and excellent electromagnetic shielding performance can be formed by alternately overlapping the polymethyl methacrylate layer and the electromagnetic shielding layers.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (9)
1. A method for manufacturing a semiconductor package, comprising: the method comprises the following steps:
1) providing a carrier substrate, arranging a temporary bonding layer on the carrier substrate, and then arranging a semiconductor chip on the temporary bonding layer;
2) spin-coating a first polymethyl methacrylate-containing toluene solution on the carrier substrate carrying the semiconductor chip, wherein the concentration of polymethyl methacrylate in the first polymethyl methacrylate-containing toluene solution is 10-15mg/ml, and then performing annealing treatment to form a first polymethyl methacrylate passivation film;
3) then spin-coating a first suspension containing metal copper nanowires on the first polymethyl methacrylate passivation film, wherein the concentration of the metal copper nanowires in the first suspension containing the metal copper nanowires is 10-20mg/ml, and then performing annealing treatment to form a first metal copper nanowire film;
4) spin-coating a second polymethyl methacrylate-containing toluene solution on the first metal copper nanowire film, wherein the concentration of polymethyl methacrylate in the second polymethyl methacrylate-containing toluene solution is 5-10mg/ml, and then performing annealing treatment to form a second polymethyl methacrylate passivation film;
5) spin-coating a second suspension containing metal copper nanowires on the second polymethyl methacrylate passivation film, wherein the concentration of the metal copper nanowires in the second suspension containing the metal copper nanowires is 5-10mg/ml, and then performing annealing treatment to form a second metal copper nanowire film;
6) spin-coating a third polymethyl methacrylate-containing toluene solution on the second metal copper nanowire film, wherein the concentration of polymethyl methacrylate in the third polymethyl methacrylate-containing toluene solution is 20-30mg/ml, and then performing annealing treatment to form a third polymethyl methacrylate passivation film;
7) then spin-coating a third suspension containing metal copper nanowires on the third polymethyl methacrylate passivation film, wherein the concentration of the metal copper nanowires in the third suspension containing the metal copper nanowires is 15-25mg/ml, and then performing annealing treatment to form a third metal copper nanowire film;
8) spin-coating a fourth toluene solution containing polymethyl methacrylate on the third metal copper nanowire film, wherein the concentration of the polymethyl methacrylate in the fourth toluene solution containing polymethyl methacrylate is 3-6mg/ml, and then performing annealing treatment to form a fourth polymethyl methacrylate passivation film;
9) then forming a plastic packaging layer on the fourth polymethyl methacrylate passivation film, wherein the plastic packaging layer covers the carrier substrate and the semiconductor chip;
10) the carrier substrate is then removed, and a redistribution layer is then formed over the molding compound and the semiconductor chip such that the semiconductor chip is electrically connected to the redistribution layer.
2. The method for manufacturing a semiconductor package according to claim 1, wherein: in the step 2), the rotation speed of the first toluene solution containing polymethyl methacrylate is 2000-3000 r/min, the spin coating time is 50-200 s, and the specific process of the annealing treatment is as follows: firstly, heat treatment is carried out for 5-10 minutes at 50-60 ℃, then the temperature is raised to 90-100 ℃, and heat treatment is carried out for 10-20 minutes at 90-100 ℃.
3. The method for manufacturing a semiconductor package according to claim 1, wherein: in the step 3), the diameter of the metal copper nanowire in the first suspension containing the metal copper nanowire is 30-90 nm, the length of the metal copper nanowire in the first suspension containing the metal copper nanowire is 3-8 μm, the rotation speed of spin-coating the first suspension containing the metal copper nanowire is 5000-7000 rpm, the spin-coating time is 60-150 seconds, and the specific process of the annealing treatment is as follows: in inert atmosphere, heat treating at 60-70 deg.C for 5-10 min, heating to 80-100 deg.C, and heat treating at 80-100 deg.C for 5-20 min.
4. The method for manufacturing a semiconductor package according to claim 1, wherein: in the step 4), the rotation speed of the spin coating of the second toluene solution containing polymethyl methacrylate is 4000-: firstly, heat treatment is carried out for 3-6 minutes at 60-70 ℃, then the temperature is raised to 90-100 ℃, and heat treatment is carried out for 5-10 minutes at 90-100 ℃.
5. The method for manufacturing a semiconductor package according to claim 1, wherein: in the step 5), the diameter of the metal copper nanowire in the second suspension containing the metal copper nanowire is 100-150 nm, the length of the metal copper nanowire in the second suspension containing the metal copper nanowire is 10-20 μm, the rotation speed of spin-coating the second suspension containing the metal copper nanowire is 4000-5500 rpm, the spin-coating time is 80-200 seconds, and the specific process of the annealing treatment is as follows: in inert atmosphere, heat treating at 70-80 deg.C for 10-15 min, heating to 90-110 deg.C, and heat treating at 90-110 deg.C for 10-20 min.
6. The method for manufacturing a semiconductor package according to claim 1, wherein: in the step 6), the rotation speed of the third toluene solution containing polymethyl methacrylate is 3000-4000 rpm, the spin coating time is 50-100 seconds, and the specific process of the annealing treatment is as follows: firstly, heat treatment is carried out for 5-10 minutes at 50-60 ℃, then the temperature is raised to 90-100 ℃, and heat treatment is carried out for 10-30 minutes at 90-100 ℃.
7. The method for manufacturing a semiconductor package according to claim 1, wherein: in the step 7), the diameter of the metal copper nanowire in the third suspension containing the metal copper nanowire is 180-250 nm, the length of the metal copper nanowire in the third suspension containing the metal copper nanowire is 20-30 μm, the rotation speed of spin-coating the third suspension containing the metal copper nanowire is 3500-5000 r/min, the spin-coating time is 60-180 seconds, and the specific process of the annealing treatment is as follows: in inert atmosphere, heat treating at 70-80 deg.C for 15-20 min, heating to 90-100 deg.C, and heat treating at 90-100 deg.C for 20-40 min.
8. The method for manufacturing a semiconductor package according to claim 1, wherein: in the step 8), the rotation speed of the spin coating of the fourth toluene solution containing polymethyl methacrylate is 5000-7000 rpm, the spin coating time is 60-120 seconds, and the specific process of the annealing treatment is as follows: firstly, heat treatment is carried out for 5-10 minutes at 50-60 ℃, then the temperature is raised to 100-120 ℃, and heat treatment is carried out for 10-30 minutes at 100-120 ℃.
9. A semiconductor package formed by the method of any of claims 1-8.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114385018A (en) * | 2020-10-20 | 2022-04-22 | 宸美（厦门）光电有限公司 | Contact structure, electronic device, and method of manufacturing contact structure |
| US20220177717A1 (en) * | 2020-12-09 | 2022-06-09 | Tpk Advanced Solutions Inc. | Contact structure, electronic device, and method of manufacturing contact structure |
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2020
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114385018A (en) * | 2020-10-20 | 2022-04-22 | 宸美（厦门）光电有限公司 | Contact structure, electronic device, and method of manufacturing contact structure |
| US20220177717A1 (en) * | 2020-12-09 | 2022-06-09 | Tpk Advanced Solutions Inc. | Contact structure, electronic device, and method of manufacturing contact structure |
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