CN111583795B - Preparation method of display panel and display device - Google Patents
Preparation method of display panel and display device Download PDFInfo
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- CN111583795B CN111583795B CN202010399536.0A CN202010399536A CN111583795B CN 111583795 B CN111583795 B CN 111583795B CN 202010399536 A CN202010399536 A CN 202010399536A CN 111583795 B CN111583795 B CN 111583795B
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- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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Abstract
The invention provides a preparation method of a display panel and a display device, wherein the preparation method comprises the following steps: providing a glass substrate; forming a back panel on a surface of the glass substrate; and turning over the back backboard and forming a front backboard on the other surface of the glass substrate. In the process of preparing the display panel, the back panel is prepared on one surface of the glass substrate, so that the stress of each film layer of the back panel can be fully released, and the glass substrate cannot be subjected to any external force; and then the front backboard is prepared on the other side of the glass substrate, so that the two-sided stress of the back backboard and the front backboard can be prevented from being superposed in the same direction, and the purposes of improving the product yield and reducing the risk of fragment are achieved.
Description
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to a method for manufacturing a display panel and a display device.
Background
In recent years, the development of a single-sided glass double-sided process means that a front display array substrate and a back signal input circuit are completed on the same glass. The single-sided glass double-sided processing technology can fully improve the utilization rate of the glass substrate, can achieve the purpose of no frame by means of a side bonding technology, and can achieve seamless splicing or splicing of ultra-narrow frames.
Taking Micro LED double-sided process as an example, the conventional process is to perform a process of front TFT substrate (TFT) on one side of a glass substrate, and the total number of the layers is 11. And then, carrying out a back circuit wiring process on the other surface of the glass substrate, wherein the total number of the process processes is 4.
Specifically, different film layers deposited on the surface of the glass substrate are subjected to different stresses, wherein the metal films such as copper (Cu) and the like deposited on the upper surface of the glass substrate are expressed as tensile stress, so that the glass substrate has a tendency of warping upwards; the deposition of silicon nitride (SiNx) or silicon oxide (SiOx) on the upper surface of the glass substrate is manifested as compressive stress, which tends to bend the glass substrate downward. Wherein, the normal glass substrate can not generate obvious warping (warping amount is less than 0.05mm) in the process of film formation, yellow light and etching in the experimental process. However, after the back surface Cu deposition is carried out by overturning, the warp degree of the glass substrate is increased (the warp amount is more than 0.5mm) due to the superposition of the tensile stress and the front SiNx protective compressive stress, so that the glass substrate deviates when the mechanical arm rotates, and the glass substrate is impacted and broken.
Therefore, the glass substrate warps to different degrees due to the stress action of different films, or the glass substrate is mechanically damaged due to the wafer-transferring etching environment, so that the glass substrate is very easy to break in the experiment process, and the productivity is reduced and the resources are wasted.
Disclosure of Invention
The invention aims to provide a preparation method of a display panel and a display device, which aim to solve the technical problems that the conventional glass substrate is easy to warp and mechanically damage.
In order to achieve the above object, the present invention provides a method for manufacturing a display panel, wherein the display panel has a dual-backplane structure, and includes a front backplane and a back backplane, and the method includes the following steps: providing a glass substrate; forming a back panel on a surface of the glass substrate; turning over the back backboard, and forming a front backboard on the other surface of the glass substrate;
the step of forming the back panel specifically comprises:
forming a first metal layer on one surface of the glass substrate, wherein the glass substrate is acted by the first metal layer to generate a first stress; forming a dielectric layer on the glass substrate and a part of the first metal layer, wherein the dielectric layer is provided with a first through hole which penetrates to the first metal layer, and the glass substrate generates second stress under the action of the dielectric layer; forming an ITO lapping layer on the first via hole and part of the dielectric layer, wherein the glass substrate generates a third stress under the action of the ITO lapping layer; forming a first insulating protection layer on the ITO lapping layer and the dielectric layer, wherein the glass substrate generates a fourth stress under the action of the first insulating protection layer;
wherein the first stress and the second stress, the third stress and the fourth stress cancel each other out.
Further, the first stress is expressed as tensile stress; the second stress and the fourth stress are expressed as compressive stresses; the third stress is zero.
Further, the material used for the first metal layer is copper; the dielectric layer is made of silicon nitrogen compound; the first insulating protection layer is made of silicon nitrogen compound.
Further, the step of forming the front backplane specifically includes:
forming a light shielding layer on a surface of the glass substrate far away from the first metal layer, wherein the position of the light shielding layer corresponds to the first metal layer; forming a second insulating protection layer on the shading layer and one surface of the glass substrate far away from the first metal layer; forming an active layer on the second insulating protection layer; forming a gate insulating layer on the active layer; forming a second metal layer on the gate insulating layer, wherein the second metal layer is patterned to form a gate; carrying out hole digging treatment on the second insulating protection layer to form a second through hole, wherein the second through hole penetrates from the second insulating protection layer to the light shielding layer; forming a third insulating protection layer on the second insulating protection layer, the active layer, the gate insulating layer and the second metal layer; forming a third metal layer on the third insulating protection layer; forming a passivation layer on the third insulating protection layer and the third metal layer; forming an electrode layer on the passivation layer; and forming a fourth metal layer on the electrode layer.
Further, in the step of forming a third insulating protection layer on the second insulating protection layer, the active layer, the gate insulating layer and the second metal layer, a hole is dug in the third insulating protection layer to form a third via hole and a fourth via hole, the third via hole is communicated with the second via hole, and the fourth via hole penetrates from the third insulating protection layer to the active layer;
in the step of forming a third metal layer on the third insulating protection layer, the third metal layer fills the second via hole, the third via hole and the fourth via hole, and the third metal layer is patterned to form a source/drain and a line changing region.
Further, in the step of forming a passivation layer on the third insulating protection layer and the third metal layer, a hole is dug in the passivation layer to form a fifth via hole and a sixth via hole; in the step of forming an electrode layer on the passivation layer, the electrode layer fills the fifth via hole and the sixth via hole.
Further, after the step of forming a fourth metal layer on the electrode layer, the method further includes: and stripping the first insulating protection layer by a dry etching process.
Furthermore, the light shielding layer is made of molybdenum; the active layer is made of indium gallium zinc oxide; the electrode layer is made of indium tin oxide.
Furthermore, the materials of the second insulating protection layer, the gate insulating layer, the third insulating protection layer and the passivation layer are all silicon oxide; the materials used by the second metal layer, the third metal layer and the fourth metal layer are at least one of molybdenum and copper.
In order to achieve the above object, the present invention also provides a display device including the display panel prepared by the foregoing preparation method.
The invention has the technical effect of providing the preparation method of the display panel and the display device. In the process of preparing the display panel, the back panel is prepared on one surface of the glass substrate, so that the stress of each film layer of the back panel can be fully released, and the glass substrate cannot be subjected to any external force; and then the front backboard is prepared on the other side of the glass substrate, so that the two-sided stress of the back backboard and the front backboard can be prevented from being superposed in the same direction, and the purposes of improving the product yield and reducing the risk of fragment are achieved.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present disclosure.
Fig. 2 is a flowchart of forming the back plate according to the embodiment of the present application.
Fig. 3 is a schematic structural diagram of forming the first metal layer according to an embodiment of the present disclosure.
Fig. 4 is a schematic structural diagram of the dielectric layer formed according to the embodiment of the present application.
Fig. 5 is a schematic structural diagram of the ITO lap layer formed in the embodiment of the present application.
Fig. 6 is a schematic structural diagram illustrating formation of the first insulating protection layer according to an embodiment of the present disclosure.
Fig. 7 is a schematic structural diagram of forming the light-shielding layer according to the embodiment of the present application.
Fig. 8 is a flowchart of forming the front backplane according to an embodiment of the present application.
Fig. 9 is a schematic structural diagram of forming the second insulating protection layer according to the embodiment of the present application.
Fig. 10 is a schematic structural diagram illustrating the formation of the active layer, the gate insulating layer and the second metal layer according to the embodiment of the present disclosure.
Fig. 11 is a schematic structural diagram of forming the first via hole according to the embodiment of the present application.
Fig. 12 is a schematic structural diagram of forming the third insulating protection layer according to the embodiment of the present application.
Fig. 13 is a schematic structural diagram of forming the third metal layer according to the embodiment of the present application.
Fig. 14 is a schematic structural diagram of forming the passivation layer according to the embodiment of the present application.
Fig. 15 is a schematic structural diagram of forming the electrode layer according to the embodiment of the present application.
Fig. 16 is a schematic structural diagram of forming the fourth metal layer according to the embodiment of the present application.
The components of the drawings are identified as follows:
100 glass substrates; 200 a back panel; 300 a front backplane;
201 a first metal layer; 202 a dielectric layer; 203 an ITO lap layer; 204 a first insulating protection layer;
301 a light-shielding layer; 302 a second insulating protective layer; 303 an active layer; 304 a gate insulating layer;
305 a second metal layer; 306 a third insulating protective layer; 307 a third metal layer; 308 a passivation layer;
309 an electrode layer; 310 a fourth metal layer;
2021 a first via; 3021 a second via; 3051 a grid;
3061 a third via hole; 3062 a fourth via hole;
3071 source and drain electrodes; 3072 a line changing area;
3081 a fifth via hole; 3082 sixth vias.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The embodiment provides a preparation method of a display panel, wherein the display panel is of a double-backplane structure and comprises a front panel and a back panel, the front panel is an array substrate for front display, and the back panel is a circuit board for back signal input, wherein the front panel and the back panel are completed on the same glass substrate.
As shown in fig. 1, the present embodiment provides a method for manufacturing a display panel, which is used to manufacture a display panel, and includes the following steps S1) -S4).
S1) providing a glass substrate.
S2) forming a back plate on one surface of the glass substrate.
S3) the back backboard is turned over, and a front backboard is formed on the other surface of the glass substrate.
S4) carrying out stripping treatment on the first insulation protection layer through a dry etching process.
As shown in fig. 2, step S2) specifically includes the following steps S21) -S24).
S21), forming a first metal layer on one surface of the glass substrate, wherein the glass substrate is acted by the first metal layer to generate a first stress, the first stress is expressed as tensile stress, and the first metal layer signal conducting wire layer is formed on the first metal layer.
As shown in fig. 3, a metallic copper Cu material is deposited on the upper surface of the glass substrate 100 to form a first metal layer 201. Specifically, in the process of forming the first metal layer, a mask plate is adopted to deposit a metal copper Cu material on the upper surface of the glass substrate, and the first metal layer formed through patterning treatment comprises a counterpoint mark, a measurement mark, a circuit wiring and the like of a back backboard. The circuit trace is used for an IC control signal fed from the outside. Further, the effect of the force exerted by the first metal layer 201 on the glass substrate 100, is a tendency to warp the glass substrate 100 upward. In other words, during the deposition of the metal material Cu, the metal material Cu may cause a reaction force of an external force that tends to stretch the glass substrate 100. Further, when the first metal layer 201 acts on the glass substrate 100, the warpage amount of the glass substrate 100 is less than 0.5 mm.
S22) forming a dielectric layer on the glass substrate and a portion of the first metal layer, wherein the dielectric layer has a first via hole penetrating to the first metal layer, and the glass substrate is acted by the dielectric layer to generate a second stress, which is expressed as a compressive stress.
As shown in fig. 4, an inorganic material is deposited on the glass substrate 100 and a portion of the first metal layer 201 by using a mask to form a dielectric layer 202. The dielectric layer 202 has a first via 2021 at a position corresponding to the first metal layer 201. The inorganic material is silicon nitride (SiNx), and the size of the glass substrate 100 tends to bend downward due to the effect of the force applied by the dielectric layer 202 on the glass substrate 100. In other words, when depositing the inorganic material on the first metal layer 201 to form the dielectric layer 202, the inorganic material may cause the glass substrate 100 to have a stress with a tendency to compress. Further, when the dielectric layer 202 is applied to the glass substrate 100, the warp amount of the glass substrate 100 is less than 0.5 mm.
S23) forming an ITO lapping layer on the first via hole and part of the dielectric layer, wherein the glass substrate is subjected to a third stress generated by the ITO lapping layer, and the third stress is zero.
As shown in fig. 5, a mask is used to deposit ITO and ITO-based material on the first via 2021 and a portion of the dielectric layer 202, thereby forming an ITO landing layer 203. Since the film thickness of the ITO lap layer 203 is small, the glass substrate 100 is substantially not subjected to the force generated by the ITO lap layer 203, and therefore, the stress of the glass substrate 100 subjected to the ITO lap layer 203 is zero. Further, when the ITO lap layer 203 acts on the glass substrate 100, the amount of warp of the glass substrate 100 is zero.
S24), forming a first insulating protection layer on the ITO bonding layer and the dielectric layer, wherein the glass substrate is subjected to a fourth stress generated by the first insulating protection layer.
As shown in fig. 6, an inorganic material is deposited on the ITO landing layer 203 and the upper surface of the dielectric layer 202 to form a first insulating protection layer 204. The inorganic material is silicon nitride (SiNx), and the glass substrate 100 tends to bend downward due to the force exerted on the glass substrate 100 by the first insulating protective layer 204. In other words, when the inorganic material is deposited to form the first insulating protection layer 204 on the ITO landing layer 203 and the upper surface of the dielectric layer 202, the inorganic material may stress the glass substrate 100 with a tendency to compress. Further, when the first insulating protection layer 204 acts on the glass substrate 100, the warpage amount of the glass substrate 100 is less than 0.5 mm.
In this embodiment, the back plate includes a first metal layer, a dielectric layer, an ITO lap layer, and a first insulating protection layer. The magnitude of the tensile stress and the magnitude of the compressive stress are related to the material and the film thickness of each film layer. Wherein the first stress and the second stress, the third stress and the fourth stress cancel each other out. Further, since the third stress is zero, the first stress is represented by a tensile stress, and the second stress and the fourth stress are represented by a compressive stress, it can be seen that in this embodiment, the total stress of the first stress and the total stress of the second stress and the fourth stress are mainly cancelled out. In brief, the tensile stress represented by the first metal layer and the compressive stress represented by the dielectric layer and the first insulating protective layer are mutually superposed, so that the warping degree of the glass substrate is zero, namely, each film layer acts on the glass substrate, and the glass substrate does not receive any acting force, does not have a fragment phenomenon and is kept intact. Therefore, when the back plate is manufactured, a person skilled in the art can limit the material and the film thickness of each film layer according to the principle that the tensile stress and the compressive stress are mutually offset.
Step S3) of turning over the back-side back plate and forming a front-side back plate on the other surface of the glass substrate includes: as shown in fig. 7, the back plate 200 is turned over by a robot (robot), and the film layer forming the back plate does not exert any force on the glass substrate 100 during the turning process, so that the back plate 200 and the glass substrate 100 are not broken due to impact when they are shifted along with the rotation of the robot.
As shown in fig. 8, step S3) specifically includes S31) -S311).
S31) forming a light-shielding layer on a surface of the glass substrate away from the first metal layer, the light-shielding layer corresponding to the first metal layer.
As shown in fig. 7, a light-shielding layer 301 is formed on the upper surface of the glass substrate 100 by using a mask, and the light-shielding layer 301 is made of molybdenum and is used for shielding the first metal layer and the metal layer formed subsequently.
S32) forming a second insulating protection layer on the light-shielding layer and a surface of the glass substrate away from the first metal layer.
As shown in fig. 9, an inorganic material is deposited on the light-shielding layer 301 and the upper surface of the glass substrate 100 to form a second insulating protection layer 302. The second insulating protection layer 302 has a double-layer silicon-oxygen protection film, and all materials used in the second insulating protection layer are silicon oxide, that is, the inorganic material is silicon oxide.
S33) forming an active layer on the second insulating protection layer.
As shown in fig. 9, an active layer 303 is formed by depositing Indium Gallium Zinc Oxide (IGZO) on the upper surface of the second insulating protective layer 302 using a mask.
S34) forming a gate insulating layer on the active layer.
As shown in fig. 10, a gate insulating layer 304 is formed by depositing an inorganic material on the active layer 303 using a mask. The materials used for the active layer 303 are all silicon oxide, that is, the inorganic material is silicon oxide.
S35) forming a second metal layer on the gate insulation layer, the second metal layer being patterned to form a gate.
As shown in fig. 10, a metal material is deposited on the gate insulating layer 304 to form a second metal layer 305, and the second metal layer 305 is patterned by using a mask to form a gate 3051. The material used for the gate 3051 is at least one of molybdenum and copper, or the structure of the gate 3051 is formed by combining two materials of molybdenum and copper.
S36) carrying out hole digging treatment on the second insulating protection layer to form a second through hole, wherein the second through hole penetrates from the second insulating protection layer to the shading layer.
As shown in fig. 11, a mask is used to perform a hole digging process on the second insulating protection layer 302, so as to form a second via hole 3021, where the second via hole 3021 penetrates through the surface of the light-shielding layer 301. The material of the second insulating protection layer 302 is silicon oxide, i.e. the inorganic material is silicon oxide.
S37) forming a third insulating protection layer on the second insulating protection layer, the active layer, the gate insulating layer and the second metal layer.
As shown in fig. 12, an inorganic material is deposited on the upper surfaces of the second insulating protection layer 302, the active layer 303, the gate insulating layer 304 and the second metal layer 305 to form a third insulating protection layer 306, and a mask is used to perform a hole-digging process on the third insulating protection layer 306 to form a third via 3061 and a fourth via 3062. The third via 3061 is connected to the second via 3021, and the fourth via 3062 penetrates from the third insulating and protecting layer 306 to the active layer 303. The third insulating protection layer 306 has a double-layer silicon oxygen protection film, and all materials used in the third insulating protection layer are silicon oxide, that is, the inorganic material is silicon oxide.
S38) forming a third metal layer on the third insulating protection layer.
As shown in fig. 13, a metal material is deposited on the upper surface of the third insulating protection layer 306 to form a third metal layer 307, the metal material fills the third via 3061 and the fourth via 3062 of the second via 3021, and the third metal layer 307 is patterned by using a mask to form a source/drain 3071 and a line replacement area 3072. The material of the third metal layer 307 is at least one of molybdenum and copper, or the structure of the third metal layer 307 is formed by combining two materials of molybdenum and copper.
S39) forming a passivation layer on the third insulating protection layer and the third metal layer.
As shown in fig. 14, an inorganic material is deposited on the upper surfaces of the third insulating protection layer 303 and the third metal layer 307 to form a passivation layer 308, and the passivation layer 308 is subjected to a hole-drilling process by using a mask plate to form a fifth via 3081 and a sixth via 3082. The passivation layer 308 is made of silicon oxide, i.e., the inorganic material is silicon oxide.
S310) forming an electrode layer on the passivation layer.
As shown in fig. 15, an indium tin oxide or indium zinc oxide material is deposited on the upper surface of the passivation layer 308 to form an electrode layer 309, and fills the fifth via hole 3081 and the sixth via hole 3082, and a mask is used to pattern the electrode layer 309 to form an anode 3091 and an auxiliary cathode 3092. The anode 3091 is connected to the source and drain electrodes, and the auxiliary cathode 3092 is connected to the wire changing region.
S311) forming a fourth metal layer on the electrode layer.
As shown in fig. 16, a metal material is deposited on the upper surface of the electrode layer 309 to form a fourth metal layer 310, the material used for the fourth metal layer 310 is at least one of molybdenum and copper, or the structure of the fourth metal layer 310 is formed by combining two materials of molybdenum and copper. The fourth metal layer 310 is a contact resistance reducing layer.
After the front-side back-plate process is completed, step S4) is further included, in step S4), the first insulating protection layer 204 is stripped through a dry etching process, referring to fig. 16.
It should be noted that, in the conventional display panel, the front backplane is prepared first, and then the back backplane is prepared. The normal glass substrate can not generate obvious warping (warping amount is less than 0.05mm) in the process of film formation, yellow light and etching in the experimental process. After the front backplane and the glass substrate are turned over, the stress produced by the inorganic film layer on the glass substrate is expressed as tensile stress. However, when the back backplane is prepared on the back surface of the glass substrate, after the back surface of the glass substrate is deposited with a metal material (Cu), the stress generated by the metal material acting on the glass substrate 100 also appears as tensile stress. Therefore, the existing glass substrate is subjected to the two-sided stress and is superposed in the same direction, so that the warping degree of the glass is increased (the warping amount is greater than 0.5mm), and the display panel deviates along with the rotation of the Robot and is easy to collide and break.
The present embodiment provides a method for manufacturing a display panel, which includes a back plate 200 and a front plate 300, refer to fig. 16. In the process of preparing the display panel, the back panel is prepared on one surface of the glass substrate, so that the stress of each film layer of the back panel can be fully released, and the glass substrate cannot be subjected to any external force; and then the front backboard is prepared on the other side of the glass substrate, so that the two-sided stress of the back backboard and the front backboard can be prevented from being superposed in the same direction, and the purposes of improving the product yield and reducing the risk of fragment are achieved.
The embodiment also provides a display device comprising the display panel prepared by the preparation method. The display device may be: any product or component with a display function, such as electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
The above detailed description is provided for the manufacturing method of the display panel and the display device provided in the embodiments of the present application, and the principle and the implementation manner of the present application are explained in this document by applying specific examples, and the description of the above embodiments is only used to help understanding the technical scheme and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (9)
1. A preparation method of a display panel is characterized in that the display panel is of a double-backboard structure and comprises a front backboard and a back backboard, and the preparation method comprises the following steps:
providing a glass substrate;
forming a back panel on a surface of the glass substrate; and
turning over the back backboard, and forming a front backboard on the other surface of the glass substrate;
the forming of the back panel specifically comprises the following steps:
forming a first metal layer on one surface of the glass substrate, wherein the glass substrate is acted by the first metal layer to generate a first stress;
forming a dielectric layer on the glass substrate and a part of the first metal layer, wherein the dielectric layer is provided with a first through hole which penetrates to the first metal layer, and the glass substrate generates second stress under the action of the dielectric layer;
forming an ITO lapping layer on the first via hole and part of the dielectric layer, wherein the glass substrate generates a third stress under the action of the ITO lapping layer; and
forming a first insulating protection layer on the ITO lapping layer and the dielectric layer, wherein the glass substrate generates a fourth stress under the action of the first insulating protection layer;
the front back plate forming step specifically comprises:
forming a light shielding layer on a surface of the glass substrate far away from the first metal layer, wherein the position of the light shielding layer corresponds to the first metal layer;
forming a second insulating protection layer on the shading layer and one surface of the glass substrate far away from the first metal layer;
forming an active layer on the second insulating protection layer;
forming a gate insulating layer on the active layer;
forming a second metal layer on the gate insulating layer, wherein the second metal layer is patterned to form a gate;
carrying out hole digging treatment on the second insulating protection layer to form a second through hole, wherein the second through hole penetrates from the second insulating protection layer to the light shielding layer;
forming a third insulating protection layer on the second insulating protection layer, the active layer, the gate insulating layer and the second metal layer;
forming a third metal layer on the third insulating protection layer;
forming a passivation layer on the third insulating protection layer and the third metal layer;
forming an electrode layer on the passivation layer;
forming a fourth metal layer on the electrode layer;
wherein the first stress and the second stress, the third stress and the fourth stress cancel each other out.
2. The method for manufacturing a display panel according to claim 1,
the first stress expression is tensile stress;
the second stress and the fourth stress are expressed as compressive stresses;
the third stress is zero.
3. The method for manufacturing a display panel according to claim 1,
the first metal layer is made of copper;
the dielectric layer is made of silicon nitrogen compound;
the first insulating protection layer is made of silicon nitrogen compound.
4. The method for manufacturing a display panel according to claim 1,
in the step of forming a third insulating protection layer on the second insulating protection layer, the active layer, the gate insulating layer and the second metal layer, hole digging is performed on the third insulating protection layer to form a third via hole and a fourth via hole, the third via hole is communicated with the second via hole, and the fourth via hole penetrates from the third insulating protection layer to the active layer;
in the step of forming a third metal layer on the third insulating protection layer, the third metal layer fills the second via hole, the third via hole and the fourth via hole, and the third metal layer is patterned to form a source/drain and a line changing region.
5. The method for manufacturing a display panel according to claim 1,
in the step of forming a passivation layer on the third insulating protection layer and the third metal layer, hole digging is performed on the passivation layer to form a fifth via hole and a sixth via hole;
in the step of forming an electrode layer on the passivation layer, the electrode layer fills the fifth via hole and the sixth via hole.
6. The method of claim 1, wherein after the step of forming a fourth metal layer on the electrode layer, the method further comprises:
and stripping the first insulating protection layer by a dry etching process.
7. The method for manufacturing a display panel according to claim 1,
the light shielding layer is made of molybdenum;
the active layer is made of indium gallium zinc oxide;
the electrode layer is made of indium tin oxide.
8. The method for manufacturing a display panel according to claim 1,
the materials of the second insulating protection layer, the grid electrode insulating layer, the third insulating protection layer and the passivation layer are all silicon oxide;
the materials used by the second metal layer, the third metal layer and the fourth metal layer are at least one of molybdenum and copper.
9. A display device comprising the display panel produced by the production method for a display panel according to any one of claims 1 to 8.
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| JP2017040859A (en) * | 2015-08-21 | 2017-02-23 | 株式会社ジャパンディスプレイ | Image display device |
| CN107611012B (en) * | 2017-08-31 | 2020-10-02 | 长江存储科技有限责任公司 | Stress control method and structure of prefabricated back film |
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| CN108649034B (en) * | 2018-05-11 | 2019-08-06 | 长江存储科技有限责任公司 | Semiconductor structure and forming method thereof |
| CN110127592B (en) * | 2019-04-15 | 2022-08-16 | 上海华虹宏力半导体制造有限公司 | MEMS sensor structure and manufacturing method thereof |
| CN110854133B (en) * | 2019-10-28 | 2021-03-16 | 深圳市华星光电半导体显示技术有限公司 | Preparation method of display panel and display panel |
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