CN111575649A - Evaporation source device and method for preparing large-area cadmium telluride film - Google Patents
Evaporation source device and method for preparing large-area cadmium telluride film Download PDFInfo
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- CN111575649A CN111575649A CN202010651451.7A CN202010651451A CN111575649A CN 111575649 A CN111575649 A CN 111575649A CN 202010651451 A CN202010651451 A CN 202010651451A CN 111575649 A CN111575649 A CN 111575649A
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- crucible
- evaporation source
- source device
- cadmium telluride
- convex groove
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses an evaporation source device and a method for preparing a large-area cadmium telluride film, wherein the evaporation source device comprises: the middle part of the bottom of the crucible is upwards protruded to form a convex groove; a heating unit disposed around the crucible; the heating unit includes: the heating resistors are arranged on the side surface of the crucible, the bottom of the convex groove, the side surface of the convex groove and two sides of the bottom of the crucible; a temperature detection unit disposed around the crucible; the temperature detection unit includes: thermocouple probes arranged on the side surface of the crucible, the middle part of the bottom of the convex groove and two sides of the bottom of the crucible; the invention improves the uniformity of the prepared large-area cadmium telluride thin film layer and can meet the production requirement of preparing the large-area cadmium telluride thin film for a long time.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to an evaporation source device and a method for preparing a large-area cadmium telluride film.
Background
The cadmium telluride (CdTe) thin film solar cell is a compound semiconductor thin film solar cell taking a cadmium telluride thin film as an absorption layer, has a very high light absorption coefficient, and is concerned by many research institutions and companies due to the characteristics of high conversion efficiency and low cost. With the popularization of 1500V photovoltaic systems and the prosperity of photovoltaic building integrated markets, cadmium telluride (CdTe) thin film solar cells provided in the current market have larger area and become a future development trend.
The preparation technology of the light absorption layer of the cadmium telluride solar cell mainly adopts an evaporation coating technology at present, and the working principle is as follows: the crucible filled with the cadmium telluride raw material is placed below the glass substrate, cadmium telluride in the crucible is sublimated by heating the crucible, and cadmium telluride vapor is grown into a cadmium telluride thin film when encountering the glass substrate with relatively low temperature. The method is suitable for deposition and film formation of substances which have low saturated vapor pressure and are easy to sublimate, but the method has the defect of poor coating uniformity when large-area products are prepared.
Disclosure of Invention
In view of this, the present application provides an evaporation source apparatus and a method for preparing a large-area cadmium telluride thin film, which can improve the uniformity of the prepared large-area cadmium telluride thin film layer and can meet the long-term production requirements.
In order to solve the above technical problem, the present application provides an evaporation source device, including:
the middle part of the bottom of the crucible is upwards protruded to form a convex groove;
a heating unit disposed around the crucible; the heating unit includes: the heating resistors are arranged on the side surface of the crucible, the bottom of the convex groove, the side surface of the convex groove and two sides of the bottom of the crucible;
a temperature detection unit disposed around the crucible; the temperature detection unit includes: and the thermocouple probes are arranged on the side surface of the crucible, the middle part of the bottom of the convex groove and two sides of the bottom of the crucible.
Preferably, the crucible is a graphite crucible.
Preferably, the crucible is a square crucible.
Preferably, the four side surfaces of the crucible are provided with a heating resistor and a thermocouple probe.
Preferably, the heating unit and the temperature detection unit are connected with a controller.
Preferably, the heating unit is embedded in the wall of the crucible.
Preferably, the crucible is provided with a jack embedded in the wall of the crucible, and the thermocouple probe is inserted into the jack.
Preferably, the insertion hole is vertically embedded in the wall of the crucible body.
Preferably, a first side heating resistor is arranged on the side surface of the crucible, a bottom middle heating resistor is arranged at the bottom of the convex groove, a second side heating resistor is arranged on the side surface of the convex groove, a bottom left heating resistor is arranged on the left side of the bottom of the crucible, and a bottom right heating resistor is arranged on the right side of the bottom of the crucible; the side surface of the crucible is provided with a side surface thermocouple probe, the middle part of the bottom of the convex groove is provided with a bottom middle thermocouple probe, the left side of the bottom of the crucible is provided with a bottom left side thermocouple probe, and the right side of the bottom of the crucible is provided with a bottom right side thermocouple probe.
Preferably, the side wall of the crucible is provided with a side jack, the opening of the side jack is arranged at the bottom of the side wall of the crucible, and the side thermocouple probe is inserted into the side jack.
Preferably, the bottom wall of the convex groove is provided with a bottom middle jack, the bottom middle jack is opened on the outer wall of the bottom of the convex groove, and the bottom middle thermocouple probe is inserted into the bottom middle jack.
Preferably, two sides of the bottom of the crucible are provided with jacks at two sides of the bottom, the jacks at two sides of the bottom are opened on the outer walls at two sides of the bottom of the crucible, and the thermocouple probe at the left side of the bottom and the thermocouple probe at the right side of the bottom are inserted into the jack at the middle part of the bottom.
Preferably, the first side heating resistor, the bottom middle heating resistor, the second side heating resistor, the bottom left heating resistor, the bottom right heating resistor, the side thermocouple probe, the bottom middle thermocouple probe, the bottom left thermocouple probe and the bottom right thermocouple probe are respectively connected with a controller.
The invention also provides a method for preparing a large-area cadmium telluride thin film by using the evaporation source device, which comprises the following steps: filling and heating cadmium telluride raw material by using the evaporation source device, and enabling the substrate to move on the evaporation source device at a constant speed.
Preferably, the method specifically comprises: filling and heating cadmium telluride raw material by using the evaporation source device in a vacuum chamber, and enabling the substrate to move on the evaporation source device at a constant speed; the vacuum chamber has a degree of vacuum of 10pa or less.
Preferably, the method specifically comprises: filling and heating the cadmium telluride raw material to be above 600 ℃ by using the evaporation source device, and enabling the substrate to move on the evaporation source device at a constant speed; the substrate is 5-15mm away from the evaporation source device.
Preferably, the substrate is a glass original sheet.
Preferably, the cadmium telluride raw material is cadmium telluride particles with the particle size of 1-10 mm.
Compared with the prior art, the detailed description of the application is as follows: in the traditional close-space sublimation method, graphite plate paving materials are used as cadmium telluride evaporation sources, and when a large-area cadmium telluride thin film solar cell is prepared, the cadmium telluride thin film deposited at the two sides of a substrate is generally slightly thin due to the fact that heat dissipation is too fast at the two sides of a deposition cavity of the device.
The invention provides an evaporation source device and a method for preparing a large-area cadmium telluride thin film, wherein the evaporation source device comprises: crucible, set up heating unit and temperature detecting element around the crucible, the heating unit includes: the setting is in the crucible side, tongue bottom, tongue side with the heating resistor of crucible bottom both sides, temperature-detecting element includes: and the thermocouple probes are arranged on the side surface of the crucible, the middle part of the bottom of the convex groove and two sides of the bottom of the crucible. The large-area cadmium telluride thin film prepared by the evaporation source device can realize the temperature control of two sides of the crucible, the middle part of the bottom and two sides of the bottom respectively. The set temperature of the two sides can be higher than the middle position during evaporation, so that the uniformity of the cadmium telluride film layer is ensured, but the consumption speed of the cadmium telluride raw materials on the two sides is higher than that of the middle position.
Meanwhile, on the premise of ensuring the uniformity of the film layer, the middle part of the bottom of the crucible is upwards protruded to form a convex groove, so that two sides of the crucible can be filled with more cadmium telluride raw materials relative to the middle part. The consumption of raw materials on two sides is balanced, the problem of film uniformity caused by too fast consumption of the raw materials on the two sides is solved, the running time of equipment is prolonged, and the problem that the continuous running time of the device is reduced to a certain extent because the raw materials on the two sides are consumed before the raw materials on the middle position in large-scale production is solved.
The heating unit is embedded in the wall of the crucible, so that the heating is uniform, the heating effect is good, and the uniformity of a large-area cadmium telluride film layer prepared by the evaporation source device is ensured.
According to the invention, the crucible is provided with the jack which is embedded in the wall of the crucible, and the thermocouple probe is inserted into the jack, so that the influence on the evaporation effect and the measurement accuracy caused by the fact that the thermocouple is directly inserted into the crucible for measurement is avoided, and the conditions that the measurement of the thermocouple probe on the outer wall of the crucible is poor in temperature measurement effect and the measurement accuracy is influenced are also avoided, thereby improving the uniformity of the prepared large-area cadmium telluride thin film layer.
Furthermore, the jacks are vertically embedded in the wall of the crucible body, so that the contact area between the thermocouple probe and the crucible is increased, the measurement accuracy is improved, and the uniformity of the prepared large-area cadmium telluride thin film layer is improved.
According to the invention, a first side heating resistor is arranged on the side surface of the crucible, a bottom middle heating resistor is arranged at the bottom of a convex groove, a second side heating resistor is arranged on the side surface of the convex groove, a bottom left heating resistor is arranged on the left side of the bottom of the crucible, and a bottom right heating resistor is arranged on the right side of the bottom of the crucible; the side surface of the crucible is provided with a side surface thermocouple probe, the middle part of the bottom of the convex groove is provided with a bottom middle thermocouple probe, the left side of the bottom of the crucible is provided with a bottom left side thermocouple probe, and the right side of the bottom of the crucible is provided with a bottom right side thermocouple probe. The heating temperature control of different parts of the crucible is realized, the uniformity of the evaporation method film layer is ensured, the maintenance can be carried out aiming at specific parts during the maintenance, the maintenance is convenient, the maintenance time is shortened, and the large-scale production efficiency is improved. A plurality of measuring points are arranged in cooperation with the heating resistor, and accuracy is improved. The left side of the bottom of the crucible is provided with the left thermocouple probe at the bottom, the right side of the bottom of the crucible is provided with the right thermocouple probe at the bottom, so that the temperature of two sides of the bottom of the crucible can be measured, the thermocouple probes do not need to be arranged on the side surfaces of the convex grooves for measuring the temperature, and the cost is saved.
Furthermore, the side wall of the crucible is provided with a side jack, the opening of the side jack is arranged at the bottom of the side wall of the crucible, and the side thermocouple probe is inserted into the side jack. The bottom wall of the convex groove is provided with a bottom middle jack, the bottom middle jack is opened on the outer wall of the bottom of the convex groove, and the bottom middle thermocouple probe is inserted into the bottom middle jack. The bottom two sides of the crucible are provided with bottom two-side jacks, openings of the bottom two-side jacks are formed in the outer walls of the two sides of the bottom of the crucible, and the bottom left-side thermocouple probe and the bottom right-side thermocouple probe are inserted into the bottom middle jack. A plurality of measuring points are ensured, and the measuring accuracy is improved, so that the uniformity of the prepared large-area cadmium telluride thin film layer is improved.
The heating unit and the temperature detection unit are connected with the controller, so that the heating and temperature control are convenient.
Furthermore, the first side heating resistor, the bottom middle heating resistor, the second side heating resistor, the bottom left heating resistor, the bottom right heating resistor, the side thermocouple probe, the bottom middle thermocouple probe, the bottom left thermocouple probe and the bottom right thermocouple probe are respectively connected with a controller, so that different parts of the crucible are respectively heated and controlled in temperature.
Drawings
FIG. 1 is a side view of an evaporation source apparatus according to the present invention;
FIG. 2 is a schematic view of an evaporation source apparatus according to the present invention;
FIG. 3 is a top view of an evaporation source apparatus according to the present invention;
FIG. 4 is a schematic diagram of a first side heating resistor of the evaporation source apparatus according to the present invention;
FIG. 5 is a schematic diagram of a bottom middle heating resistor, a second side heating resistor, a bottom left heating resistor, and a bottom right heating resistor of the evaporation source device of the present invention;
fig. 6 is a schematic view of a plug hole of the evaporation source device of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1, an evaporation source apparatus includes:
the middle part of the bottom of the crucible 1 protrudes upwards to form a convex groove 12;
a heating unit 2 disposed around the crucible; the heating unit comprises 2: the heating resistors are arranged on the side surface of the crucible, the bottom of the convex groove, the side surface of the convex groove and two sides of the bottom of the crucible;
a temperature detection unit 3 disposed around the crucible; the temperature detection unit 3 includes: thermocouple probes arranged on the side surface of the crucible, the middle part of the bottom of the convex groove and two sides of the bottom of the crucible;
wherein the content of the first and second substances,
as shown in FIGS. 1-4,
the crucible 1 is a square graphite crucible;
the four side surfaces of the crucible 1 are provided with heating resistors and thermocouple probes;
a first lateral heating resistor 21 is arranged on the lateral side of the crucible 1, a bottom middle heating resistor 22 is arranged at the bottom of the convex groove 12, a second lateral heating resistor 23 is arranged on the lateral side of the convex groove 12, a bottom left heating resistor 24 is arranged on the left side of the bottom of the crucible 1, and a bottom right heating resistor 25 is arranged on the right side of the bottom of the crucible 1;
a side thermocouple probe 31 is arranged on the side surface of the crucible 1, a bottom middle thermocouple probe 32 is arranged in the middle of the bottom of the convex groove 12, a bottom left side thermocouple probe 33 is arranged on the left side of the bottom of the crucible 1, and a bottom right side thermocouple probe 34 is arranged on the right side of the bottom of the crucible 1;
the heating unit 2 is embedded in the wall of the crucible 1; the crucible 1 is provided with an insertion hole 13, the insertion hole is vertically embedded in the wall of the crucible 1, and the thermocouple probe is inserted into the insertion hole 13;
a side jack 131 is arranged on the side wall of the crucible 1, the opening of the side jack 131 is arranged at the bottom of the side wall of the crucible 1, and the side thermocouple probe 31 is inserted into the side jack 131;
a bottom middle jack 132 is arranged on the bottom wall of the convex groove 12, an opening of the bottom middle jack 132 is arranged on the outer wall of the bottom of the convex groove 12, and the bottom middle thermocouple probe 32 is inserted into the bottom middle jack 132;
bottom both sides jack 133 is set up to crucible 1 bottom both sides, bottom both sides jack 133 opening is located crucible 1's bottom both sides outer wall, bottom left side thermocouple probe 33 with bottom right side thermocouple probe 34 insert in bottom middle part jack 133.
The heating unit 2 and the temperature detection unit 3 are connected with a controller 4;
the first side heating resistor 21, the bottom middle heating resistor 22, the second side heating resistor 23, the bottom left heating resistor 24, the bottom right heating resistor 25, the side thermocouple probe 31, the bottom middle thermocouple probe 32, the bottom left thermocouple probe 33, and the bottom right thermocouple probe 34 are respectively connected to the controller 4.
The invention also provides a method for preparing a large-area cadmium telluride thin film by using the evaporation source device, which comprises the following steps: vacuumizing the vacuum chamber to the vacuum degree of below 10pa, filling and heating the cadmium telluride raw material in the vacuum chamber to 600 ℃ by using the evaporation source device, and enabling the substrate to move above the evaporation source device by 5-15mm at a constant speed;
wherein the cadmium telluride raw material is cadmium telluride particles with the particle size of 1-10mm, the substrate is a glass original sheet, and the width of the crucible 1 is larger than that of the substrate.
The above is only a preferred embodiment of the present invention, and it should be noted that the above preferred embodiment should not be considered as limiting the present invention, and the protection scope of the present invention should be subject to the scope defined by the claims. It will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the spirit and scope of the invention, and these modifications and adaptations should be considered within the scope of the invention.
Claims (10)
1. An evaporation source apparatus, comprising:
the middle part of the bottom of the crucible is upwards protruded to form a convex groove;
a heating unit disposed around the crucible; the heating unit includes: the heating resistors are arranged on the side surface of the crucible, the bottom of the convex groove, the side surface of the convex groove and two sides of the bottom of the crucible;
a temperature detection unit disposed around the crucible; the temperature detection unit includes: and the thermocouple probes are arranged on the side surface of the crucible, the middle part of the bottom of the convex groove and two sides of the bottom of the crucible.
2. The evaporation source apparatus according to claim 1, wherein the crucible is a graphite crucible.
3. The evaporation source apparatus according to claim 1, wherein the crucible is a square crucible.
4. The evaporation source apparatus according to claim 1, wherein the heating unit and the temperature detection unit are connected to a controller.
5. The evaporation source device according to claim 1, wherein the heating unit is embedded in a wall of the crucible.
6. The evaporation source apparatus according to claim 1, wherein the crucible is provided with a socket, the socket is provided outside inside a wall of the crucible, and the thermocouple probe is inserted into the socket.
7. The evaporation source device according to claim 1, wherein a first lateral heating resistor is disposed on the side of the crucible, a bottom middle heating resistor is disposed on the bottom of the convex groove, a second lateral heating resistor is disposed on the side of the convex groove, a bottom left heating resistor is disposed on the left side of the bottom of the crucible, and a bottom right heating resistor is disposed on the right side of the bottom of the crucible; the side surface of the crucible is provided with a side surface thermocouple probe, the middle part of the bottom of the convex groove is provided with a bottom middle thermocouple probe, the left side of the bottom of the crucible is provided with a bottom left side thermocouple probe, and the right side of the bottom of the crucible is provided with a bottom right side thermocouple probe.
8. A method for preparing a large-area cadmium telluride thin film by using the evaporation source device as claimed in any one of claims 1 to 7, comprising: filling and heating cadmium telluride raw material by using the evaporation source device, and enabling the substrate to move on the evaporation source device at a constant speed.
9. The method according to claim 8, characterized in that the method comprises in particular: filling and heating cadmium telluride raw material in a vacuum chamber by using an evaporation source device, and enabling a substrate to move on the evaporation source device at a constant speed; the vacuum chamber has a degree of vacuum of 10pa or less.
10. The method according to claim 8, characterized in that the method comprises in particular: filling and heating the cadmium telluride raw material to be above 600 ℃ by using the evaporation source device, and enabling the substrate to move on the evaporation source device at a constant speed; the substrate is 5-15mm away from the evaporation source device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010651451.7A CN111575649B (en) | 2020-07-08 | 2020-07-08 | Evaporation source device and method for preparing large-area cadmium telluride film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010651451.7A CN111575649B (en) | 2020-07-08 | 2020-07-08 | Evaporation source device and method for preparing large-area cadmium telluride film |
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| CN111575649A true CN111575649A (en) | 2020-08-25 |
| CN111575649B CN111575649B (en) | 2022-06-17 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112176289A (en) * | 2020-09-22 | 2021-01-05 | 中国建材国际工程集团有限公司 | Crucible boat for cadmium telluride/cadmium sulfide/cadmium selenide film deposition and preparation method thereof |
| CN115341179A (en) * | 2022-08-15 | 2022-11-15 | 合肥欣奕华智能机器股份有限公司 | Evaporation source structure for OLED evaporation |
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| EP0982411A2 (en) * | 1998-08-26 | 2000-03-01 | TDK Corporation | Evaporation source, apparatus and method for the preparation of organic EL device |
| CN1500904A (en) * | 2002-10-21 | 2004-06-02 | 日本东北先锋公司 | Vacuum evaporator and method for manufacturing organic el display panel using the same |
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| CN115341179A (en) * | 2022-08-15 | 2022-11-15 | 合肥欣奕华智能机器股份有限公司 | Evaporation source structure for OLED evaporation |
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| Publication number | Publication date |
|---|---|
| CN111575649B (en) | 2022-06-17 |
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