CN111573616B - Composite high aspect ratio groove standard template and preparation method thereof - Google Patents
Composite high aspect ratio groove standard template and preparation method thereof Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00404—Mask characterised by its size, orientation or shape
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0198—Manufacture or treatment of microstructural devices or systems in or on a substrate for making a masking layer
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Abstract
The invention provides a composite high aspect ratio groove standard template and a preparation method thereof, belonging to the technical field of micro-nano metering, and comprising a groove structure with depth and width dimensions, an orthogonal scanning positioning structure, a slice positioning structure, a positioning angle structure and a groove positioning structure; the orthogonal scanning positioning structure, the slice positioning structure and the groove positioning structure are uniformly arranged on two sides of the groove structure in the length direction, and the positioning angle structures are arranged at four corners of the standard template; the depth-to-width ratio of the groove is more than or equal to 10:1. The composite high-aspect ratio groove standard template and the preparation method provided by the invention can accurately measure the width and depth of the groove or step standard template, and simultaneously reproduce the influence existing between two parameter results in the measurement process, thereby improving the accuracy of test data and reducing the cost of the standard template.
Description
Technical Field
The invention belongs to the technical field of nano metering, and particularly relates to a composite high-aspect-ratio groove standard template and a preparation method thereof.
Background
The high aspect ratio silicon-based MEMS (micro electro mechanical system, microelectro Mechanical Systems) device can be used as a piezoresistive pressure and acceleration sensor, a high-density micro capacitance array, a biochemical sensor, a microsatellite sensor and the like, and has important strategic values in the fields of inertial guidance, high-efficiency energy storage, public safety, deep space detection and the like. As MEMS devices continue to evolve toward high integration and low power consumption, high aspect ratio comb capacitor structures and Through Silicon Via (TSV) structures are becoming more and more widely used. Industrial applications of high aspect ratio silicon-based MEMS device fabrication and Through Silicon Via (TSV) technology have created an urgent need for rapid, non-destructive measurement techniques and equipment for high aspect ratio structures.
The silicon-based MEMS high aspect ratio micro-structure aspect ratio is generally between 10:1 and 100:1, and the depth of the groove is several micrometers to tens of micrometers. The measurement problem of a large number of high aspect ratio parameters is related in the manufacturing process of the silicon-based MEMS device, in particular to the measurement problem of structural parameters with the aspect ratio being more than or equal to 10:1, which is an important means for ensuring the quality of the device.
Many related institutions at home and abroad are developing the research work of nondestructive measurement of a silicon-based MEMS high aspect ratio structure, and striving to develop a corresponding measurement system as soon as possible. The silicon-based MEMS high aspect ratio three-dimensional structure measurement system is mainly applied to measurement of various high aspect ratio parameters in the manufacturing process of silicon-based MEMS devices, and the accuracy of measurement results is very important. In order to ensure the accuracy of the measurement result of the silicon-based MEMS high-aspect-ratio three-dimensional structure measurement system, a composite high-aspect-ratio groove (step) standard template with a proper size needs to be developed, so that the measurement capability of the silicon-based MEMS high-aspect-ratio three-dimensional structure measurement system in the application field is accurately calibrated.
The MEMS high aspect ratio three-dimensional structure measuring system is mainly used for measuring device structures of high aspect ratio structures, a plurality of foreign metering mechanisms and standard sample wafer companies all manufacture standard templates with a plurality of relevant sizes, but the standard templates are all standard templates with different groove line width sizes and step height sizes, the templates with single width or single step height can only measure one parameter at a time, the influence between two parameter results in the measuring process cannot be reproduced at the same time, the size is unsuitable, the composite high aspect ratio groove or step standard templates with the aspect ratio of more than or equal to 10:1 are not integrated together, and the price of a single template is quite expensive.
Disclosure of Invention
The invention aims to provide a composite high-aspect ratio groove standard template, and aims to provide a standard template with an aspect ratio of grooves being more than or equal to 10:1.
In order to achieve the above purpose, the invention adopts the following technical scheme: providing a composite high aspect ratio trench master template, the master template comprising: a trench structure having depth and width dimensions, an orthogonal scan positioning structure, a slice positioning structure, a positioning angle structure, and a trench positioning structure; the orthogonal scanning positioning structure, the slice positioning structure and the groove positioning structure are uniformly arranged on two sides of the groove structure in the length direction, and the positioning angle structures are arranged at four corners of the standard template; the depth-to-width ratio of the groove structure is more than or equal to 10:1.
As another embodiment of the present application, the orthogonal scanning positioning structure includes a plurality of arrow marks symmetrically disposed on two sides of the trench structure, the arrow marks point in the same direction, and the direction is consistent with the length direction of the trench structure.
As another embodiment of the present application, the slice positioning structure includes a plurality of isosceles triangle marks symmetrically disposed on two sides of the groove structure, and the directions of the vertex angles of the isosceles triangle marks are the same or opposite, and are consistent with the length direction of the groove structure.
As another embodiment of the present application, the groove positioning structure includes linear marks symmetrically disposed on two sides of the groove structure, and a length direction of the linear marks is parallel to a length direction of the groove structure.
As another embodiment of the present application, the depth dimension of the trench is 60 μm to 300 μm, the linewidth dimension of the trench is 2 μm to 30 μm, and the depth and linewidth dimension of the trench correspond to the following: when the line width dimension is 2 mu m, the depth dimension of the groove corresponding to the standard template is 60 mu m, and the depth-to-width ratio is 30:1; when the line width dimension is 5 mu m, the depth dimension of the groove corresponding to the standard template is 150 mu m, and the depth-to-width ratio is 30:1; when the line width dimension is 10 mu m, the depth dimension of the groove corresponding to the standard template is 300 mu m, and the depth-to-width ratio is 30:1; when the line width dimension is 30 μm, the depth dimension of the groove corresponding to the standard template is 300 μm, and the depth-to-width ratio is 10:1.
The invention further aims at providing a preparation method of the composite high aspect ratio groove standard template, which comprises the following steps of;
manufacturing a mask plate according to a preset pattern;
growing a silicon dioxide layer on the surface of a substrate, bonding the silicon dioxide layer with an upper silicon wafer, and grinding the upper silicon wafer to a required size to prepare a processing substrate;
cleaning the processing substrate and then drying;
coating photoresist on the surface of the processing substrate;
exposing the preset pattern on the processing substrate by utilizing a projection lithography process;
developing to remove the photoresist in the light transmission area, and then drying the processing substrate;
etching a groove structure in the preset pattern area, extracting a plurality of positions to carry out a splitting test on the sample wafer, testing whether the depth dimension of the groove is consistent with the preset requirement, and carrying out secondary exposure and etching when the depth dimension of the groove cannot meet the preset dimension requirement of the standard sample wafer;
growing a silicon dioxide layer on the side surface of the groove by utilizing an oxidation process;
etching to remove the side-grown silicon dioxide layer.
As another embodiment of the present application, the cleaning and then drying the processing substrate includes:
placing the processed substrate into a No. 1 cleaning solution, boiling for 15-20 min, controlling the temperature at 80-90 ℃, and washing with water to be neutral;
rinsing in hydrofluoric acid for 1min-3min, and washing with water to neutrality;
boiling in No. 2 cleaning solution at 80-90 deg.C for 10-15 min, and washing with water to neutrality;
and drying the cleaned processing substrate by using nitrogen which is dried and filtered.
In another embodiment of the present application, in the photoresist coating on the surface of the processed substrate, the thickness of the photoresist is 400nm-500nm, the thickness of the photoresist is selected according to the difference of the depth of the trench, and the photoresist is baked at 120-140 ℃ for 10-20 min.
As another embodiment of the present application, the developing, removing the photoresist in the light transmitting region, and then drying the processed substrate:
developing in NaOH solution, removing photoresist in the light transmission area, and baking at 120-140 ℃ for 10-20 min.
As another embodiment of the present application, the etching of the groove in the preset pattern area selects a plurality of positions to perform a splitting test on the sample wafer, and tests whether the depth dimension of the groove is consistent with the preset requirement, and when the preset dimension requirement of the sample wafer cannot be met, the secondary exposure and etching are performed:
the etching gas is SF 6 Or/and C 4 F 8 The etching rate is set to be 15nm/min-20nm/min, and the etching depth is the preset depth of the groove; the photoresist was removed using an acetone solution and the initial processing of the standard template was completed.
The composite high-aspect ratio groove standard template and the preparation method thereof have the beneficial effects that: compared with the prior art, the method has the advantages that the grooves or steps with the high aspect ratio being more than or equal to 10:1, and the orthogonal scanning calibration structure, the groove positioning structure, the positioning angle structure and the slice positioning structure with the positioning function are integrated, the grooves or steps are manufactured on one standard template, the width and the depth of the grooves can be measured simultaneously, the influence between two parameter results in the measuring process is reproduced simultaneously, the accuracy of test data is improved, and the cost of the standard template can be reduced; meanwhile, a bonding mode is adopted to prepare and process the substrate: and a silicon dioxide layer grows on the surface of the substrate, and after bonding with another silicon wafer, the upper silicon wafer is ground to a required size and is used as a lining or a substrate for accurately manufacturing a standard template, and the manufactured standard template has good uniformity and stability and meets the requirement of being used as the standard template.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments or the description of the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a composite high aspect ratio trench standard template according to an embodiment of the present invention;
FIG. 2 is a schematic diagram showing a measurement result of an orthogonal scanning calibration structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram II of a measurement result of an orthogonal scanning calibration structure according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a composite high aspect ratio trench standard template according to an embodiment of the present invention;
FIG. 5 is a schematic view of a composite high aspect ratio trench standard template according to an embodiment of the present invention after slicing;
FIG. 6 is a flow chart of a process for manufacturing a composite high aspect ratio trench standard template according to an embodiment of the present invention.
In the figure: 1. a trench structure; 11. a groove; 12. a step; 2. positioning angle structure; 3. a standard template; 4. an orthogonal scanning positioning structure; 5. a trench positioning structure; 6. slice positioning structure.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1, fig. 4 and fig. 5, a method for preparing a composite high aspect ratio trench standard template according to the present invention will now be described. The preparation method of the composite high-aspect-ratio groove standard template comprises a groove structure 1 with depth and width dimensions, an orthogonal scanning positioning structure 4, a slice positioning structure 6, a positioning angle structure 2 and a groove positioning structure 5; the orthogonal scanning positioning structure 4, the slice positioning structure 6 and the groove positioning structure 5 are uniformly arranged on two sides of the groove structure 1 in the length direction, and the positioning angle structure 2 is arranged at four corners of the standard template 3; the depth-to-width ratio of the trench structure 1 is greater than or equal to 10:1.
Compared with the prior art, the preparation method of the composite high-aspect-ratio groove standard template provided by the invention is used for calibrating the accuracy of the measurement result of the silicon-based MEMS high-aspect-ratio three-dimensional structure measurement system, integrating the groove structure with certain depth and width dimensions, and the orthogonal scanning calibration structure 4, the groove positioning structure 5, the positioning angle structure 2 and the slice positioning structure 6 with positioning function, and integrating the groove structure 1 on one standard template 3, so that the depth and the width of the groove structure 1 can be measured simultaneously, the influence between two parameter results in the measurement process can be reproduced simultaneously, the accuracy of test data can be improved, and the manufacturing cost of the standard template 3 can be reduced; the bonding method is adopted to prepare and process the substrate: and a silicon dioxide layer grows on the surface of the substrate, the silicon dioxide layer is bonded with another silicon wafer, then the upper silicon wafer is ground to the required size, the surface flatness of the silicon wafer is ensured by grinding the silicon wafer, the silicon wafer is used as a lining or a substrate for accurately manufacturing a standard template, and the manufactured standard template has good uniformity and stability and meets the requirement of being used as the standard template.
When manufacturing and processing the substrate, a silicon dioxide layer grows on the surface of the substrate, the silicon dioxide layer is connected with another silicon wafer by adopting a bonding mode, a thinning machine is selected to grind the upper silicon wafer to a required size after bonding, and CMP (chemical mechanical polish-chemical mechanical polishing) is used for grinding the silicon wafer to ensure the surface flatness of the silicon wafer, so that the silicon wafer is used for accurately manufacturing a lining or a substrate of a standard template, has good uniformity and stability, and meets the requirement of being used as the standard template.
In the present invention, the depth of the groove 11, that is, the height of the step 12, and thus, the ratio of the height to the width of the step 12 can also be said.
As a specific embodiment of the method for preparing a composite high aspect ratio trench standard template provided by the present invention, referring to fig. 1 and 4, the orthogonal scanning positioning structure 4 includes a plurality of arrow marks symmetrically disposed on two sides of the trench structure 1, the arrow marks point in the same direction, and the direction is consistent with the length direction of the trench structure 1 or the step. The orthogonal scanning positioning structure 4 is used for judging the accuracy of the scanning direction of the width dimension of the standard template 3 in the calibration process, if the measurement level of the probe is consistent in the calibration process, the scanned graph is shown in fig. 2, the steps of the standard groove are consistent in dimension, if skew occurs, the scanned graph may have the result shown in fig. 3, the steps of the standard groove are inconsistent in dimension, the width dimension of the standard groove 1 is also enlarged, and based on the adjustment of the measurement direction of the template, the orthogonal scanning positioning structure can further ensure the accuracy of the measurement result of the width dimension of the template.
As a specific implementation manner of the embodiment of the present invention, referring to fig. 1 and 4, the slice positioning structure 6 includes a plurality of isosceles triangle marks symmetrically disposed on two sides of the trench structure 1, wherein the directions of the vertex angles of the isosceles triangle marks are the same or opposite, and the directions are consistent with the length direction of the trench structure 1 or the step. After the standard template 3 is manufactured, the slice is cut, so that the examination and calibration of the sample wafer are facilitated, and the slice positioning structure 6 is used for determining the slice position of the manufactured standard template 3 and improving the slice precision.
As a specific implementation manner of the embodiment of the present invention, referring to fig. 1 and 4, the trench positioning structure 5 includes linear marks symmetrically disposed on two sides of the trench structure 1, and a length direction of the linear marks is parallel to a length direction of the trench structure 1 or the step. The groove locating structure 5 is used for facilitating calibration and consistency of measurement positions during measurement.
As a specific implementation manner of the embodiment of the present invention, referring to fig. 1 and 4, the positioning angle structure 2 is isosceles triangle marks, and the vertex angle of each isosceles triangle mark points to the vertex angle corresponding to the standard template 3. The positioning angle structure 2 can help to quickly determine the direction of the position of the dailies.
As a specific implementation of the embodiment of the present invention, referring to FIG. 5, the height dimension of the trench 11 is 60 μm-300 μm, and the line width dimension of the trench 11 is 2 μm-30 μm.
In this embodiment, the machining dimensions of the trench structure 1 on the standard template 3 are four, and are respectively designed as follows:
(1) A depth dimension of 300 μm, a width dimension of 30 μm and an aspect ratio of 10:1; (2) A depth dimension of 300 μm, a width dimension of 10 μm, and an aspect ratio of 30:1; (3) A depth dimension of 150 μm, a width dimension of 5 μm, and an aspect ratio of 30:1; (4) The depth dimension was 60 μm, the width dimension was 2 μm, and the aspect ratio was 30:1. The overall length and width dimensions of the standard template 3 were 10mm by 10mm.
The invention also provides a preparation method of the composite high aspect ratio groove standard template, which is shown in fig. 6 and comprises the following steps of;
s101, manufacturing a mask plate according to a preset pattern;
s102, growing a silicon dioxide layer on the surface of a substrate, bonding the silicon dioxide layer with an upper silicon wafer, and grinding the upper silicon wafer to a required size to prepare a processing substrate; a silicon dioxide layer grows on the surface of the substrate and then is bonded with another silicon wafer to prepare a processing substrate, and the silicon dioxide has the function of ensuring the accuracy of etching depth; the thickness of the upper layer silicon wafer is determined according to the depth of the groove structure 1 to be processed according to the standard template 3; the thickness dimensions of the silicon wafer in this embodiment include: 300 μm, 150 μm, 60 μm, 10 μm.
S103, cleaning the processing substrate and then drying;
s104, coating photoresist on the surface of the processed substrate;
s105, projection lithography: manufacturing the preset pattern on the processing substrate by utilizing a projection lithography technology; wherein the mask is a master, and the preset graphic area is a non-light-transmitting area;
s106, developing to remove the photoresist in the light transmission area, and then drying the processing substrate;
s107, etching grooves or steps in the preset pattern area, extracting sample wafers at five positions to carry out a splitting test, and testing whether the depth dimension of the grooves is consistent with the requirement, wherein when the depth of the grooves cannot meet the requirement of the preset dimension of the sample wafers, secondary exposure and etching are required to ensure that the depth meets the requirement;
s108, growing a silicon dioxide layer on the side surface of the groove structure 1 or the step by utilizing an oxidation process;
and S109, etching to remove the side-grown silicon dioxide layer.
The mask in S101 is only required to be manufactured before the photolithography in S105, and this embodiment is only for convenience of illustration, and a specific implementation sequence is provided, which does not specifically refer to the first step of the preparation method.
In this embodiment, the functions of step S108 and step S109 are: because the high aspect ratio parameter of the standard template 3 is more than or equal to 10:1, the template after the first etching has a plurality of burrs on the side wall of the groove, and the roughness of the side wall is larger, so that a large error is caused to measurement; a layer of thinner silicon dioxide grows on the surface of the template groove by adopting an oxidation process, and then secondary corrosion is carried out to remove the silicon dioxide layer, so that the flatness of the side surface of the template groove can be greatly improved.
In this embodiment, since the depth of the trench is deep, but the width is narrow, it is important to ensure the depth dimension of the trench and the flatness of the side surface of the trench, and the secondary exposure and etching in step S107 of the present invention can ensure the depth of the trench provided by the present invention, S108 and S109 play an important role in the flatness of the side surface of the deep trench.
In fig. 6 of the present embodiment, S101 corresponds to the pattern design in fig. 6, S102 corresponds to the cleaning and oxidation in fig. 6, S103 to S106 correspond to the contact lithography in fig. 6, S107 corresponds to the etching in fig. 6, and S108 to S109 correspond to the re-cleaning and the oxidizer etching in fig. 6, which are performed after etching and between the sidewall oxidation, that is, before the oxidation of the trench side surface, the etched processing substrate needs to be cleaned.
In step S101 of the present invention, a mask is fabricated according to a preset pattern, where the preset pattern includes a deep trench structure 1 or step having a depth and a width, an orthogonal scanning positioning structure 4, a slice positioning structure 6, a positioning angle structure 2, and a trench positioning structure 5.
And (3) preparing a processing substrate in the step S102, growing a silicon dioxide layer on the surface of the substrate, connecting the silicon dioxide layer with another silicon wafer in a bonding mode, grinding an upper silicon wafer to a required size by using a thinning machine after bonding, and grinding the silicon wafer by using CMP (chemical mechanical polish-chemical mechanical grinding) to ensure the surface flatness of the silicon wafer, so that the silicon wafer is used for accurately manufacturing a lining or a substrate of a standard template, has good uniformity and stability, and meets the requirement of being used as the standard template.
In step S102 of this embodiment, a double-sided polished silicon wafer is used as the substrate, and the crystalline phase of the silicon wafer is 100. And cleaning and drying the silicon wafer, growing a layer of silicon dioxide on the silicon wafer, wherein the thickness is about 1000nm, selecting a piece of silicon wafer as an upper layer of silicon wafer, bonding the upper layer of silicon wafer with the silicon wafer on which the silicon dioxide layer is grown, and preparing a processing substrate, wherein the silicon dioxide has the function of ensuring the accuracy of etching depth. After bonding, a thinning machine is selected to grind the upper layer silicon wafer to the required size, and CMP (chemical mechanical polish-chemical mechanical polishing) is used for grinding the silicon wafer to ensure the surface flatness.
In step S103 of this embodiment, the cleaning and then drying the processing substrate includes:
placing the processed substrate into a No. 1 cleaning solution, boiling for 15-20 min, controlling the temperature at 80-90 ℃, and washing with water to be neutral;
rinsing in hydrofluoric acid for 2min, and washing with water to neutrality;
boiling in No. 2 cleaning solution at 80-90 deg.C for 10-15 min, and washing with water to neutrality;
and drying the cleaned processing substrate by using nitrogen which is dried and filtered.
In this embodiment, the cleaning solution is prepared as follows:
cleaning liquid 1: water: ammonia water: hydrogen peroxide=5:1:1 (volume ratio)
Cleaning liquid No. 2: water: hydrochloric acid: hydrogen peroxide=5:1:1 (volume ratio).
In step S104 of this embodiment, in the photoresist coated on the surface of the processed substrate, the thickness of the photoresist is 400nm-500nm, and the thickness of the photoresist is selected according to the different depths of the grooves, and baked at 120-140 ℃ for 10-20 min. For example, baking at 130deg.C for 15min, and performing all dimensions by contact lithography, wherein the mask is positive and the pattern area is non-transparent. Wherein the thickness of the photoresist is directly proportional to the depth of the trench.
In step S106 of the present invention, the photoresist in the light-transmitting area is removed by developing, and then the processed substrate is dried: developing in NaOH solution, removing photoresist in the light transmission area, and baking at 120-140 ℃ for 10-20 min. For example, baking at 130℃for 15min.
In step S107, etching grooves or steps in the preset pattern area, extracting samples at five positions, and performing a splitting test to test whether the depth dimension of the grooves is consistent with the requirement, wherein when the depth of the grooves cannot meet the preset dimension requirement of the samples, secondary exposure and etching are required to ensure that the depth reaches the requirement: etching the silicon wafer in the pattern area without photoresist masking by using a dry etching technology, wherein the etching gas is SF 6 Or/and C 4 F 8 The etching method mainly plays a role in etching, the etching rate is set to be 15nm/min-20nm/min, and the etching depth is the preset depth of the groove; the photoresist is removed using an acetone solution and the initial processing of the standard template is completed.
In this embodiment, there are 4 effective grooves or steps in the effective area of the standard template, where the two structures above need to be sliced and split, and five positions are selected for splitting test, so as to facilitate the examination and calibration of the sample.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (3)
1. A composite high aspect ratio trench master template, the master template comprising: a trench structure having depth and width dimensions, an orthogonal scan positioning structure, a slice positioning structure, a positioning angle structure, and a trench positioning structure; the orthogonal scanning positioning structure, the slice positioning structure and the groove positioning structure are uniformly arranged on two sides of the groove structure in the length direction, and the positioning angle structures are arranged at four corners of the standard template; the depth-to-width ratio of the groove structure is greater than or equal to 10:1;
the depth dimension of the groove is 60-300 mu m, and the line width dimension of the groove is 2-30 mu m; the preparation method of the composite high aspect ratio groove standard template comprises the following steps of;
manufacturing a mask plate according to a preset pattern;
growing a silicon dioxide layer on the surface of a substrate, bonding the silicon dioxide layer with an upper silicon wafer, and grinding the upper silicon wafer to a required size to prepare a processing substrate;
cleaning the processing substrate and then drying;
coating photoresist on the surface of the processing substrate;
exposing the preset pattern on the processing substrate by utilizing a projection lithography process;
developing to remove the photoresist in the light transmission area, and then drying the processing substrate;
etching a groove structure in the preset pattern area, selecting a plurality of positions to carry out a splitting test on the sample wafer, testing whether the depth dimension of the groove is consistent with the preset requirement, and carrying out secondary exposure and etching when the depth of the groove cannot meet the preset dimension requirement of the standard sample wafer;
growing a silicon dioxide layer on the side surface of the groove by utilizing an oxidation process;
etching, removing a silicon dioxide layer growing on the side surface, and ensuring the flatness of the side surface of the deep groove;
and etching the groove in the preset pattern area, selecting a plurality of positions to perform a splitting test on the sample wafer, testing whether the depth dimension of the groove is consistent with the preset requirement, and performing secondary exposure and etching when the preset dimension requirement of the sample wafer cannot be met:
the etching gas is SF 6 Or/and C 4 F 8 The etching rate is set to be 20nm/min-25nm/min, and the etching depth is the preset depth of the groove; removing the photoresist by using an acetone solution, and finishing the primary sample processing of the standard sample plate;
the orthogonal scanning positioning structure comprises a plurality of arrow marks symmetrically arranged on two sides of the groove, the arrow marks point to the same direction, and the direction is consistent with the length direction of the groove structure;
the slice positioning structure comprises a plurality of isosceles triangle marks symmetrically arranged on two sides of the groove structure, the directions of the vertex angles of the isosceles triangle marks are the same or opposite, and the directions are consistent with the length direction of the groove structure;
the groove positioning structure comprises linear marks symmetrically arranged on two sides of the groove structure, and the length direction of the linear marks is parallel to the length direction of the groove structure.
2. The composite high aspect ratio trench standard template of claim 1, wherein in the photoresist coated on the surface of the processed substrate, the thickness of the photoresist is 400nm-500nm, the thickness of the photoresist is selected according to the depth of the trench, and the photoresist is baked at 120 ℃ to 140 ℃ for 15min-20 min.
3. The composite high aspect ratio trench master template of claim 1 wherein said developing removes photoresist in the light transmission areas and then dries said processed substrate:
developing in NaOH solution, removing photoresist in the light transmission area, and baking at 120-140 ℃ for 10-20 min.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101996868A (en) * | 2009-08-27 | 2011-03-30 | 上海华虹Nec电子有限公司 | Forming method of P-type and N-type semiconductor thin layers arranged in alternant mode |
| CN102024848A (en) * | 2010-11-04 | 2011-04-20 | 天津环鑫科技发展有限公司 | Trench structure for power device and manufacturing method thereof |
| CN107248495A (en) * | 2017-06-20 | 2017-10-13 | 上海华力微电子有限公司 | A kind of method that high-aspect-ratio isolation is formed in energetic ion injection technology |
| CN109346421A (en) * | 2018-09-29 | 2019-02-15 | 中国电子科技集团公司第十三研究所 | The valued methods of line-spacing standard sample of photo |
| CN109444472A (en) * | 2018-12-19 | 2019-03-08 | 中国电子科技集团公司第十三研究所 | Scanning electron microscope alignment pattern print and preparation method |
| CN109545855A (en) * | 2018-11-19 | 2019-03-29 | 中国科学院微电子研究所 | Preparation method of active region of silicon carbide double-groove MOSFET device |
| CN109855572A (en) * | 2018-12-25 | 2019-06-07 | 中国电子科技集团公司第十三研究所 | For calibrating the line-spacing template and preparation method of optical profilometer roughness |
| DE102018105922A1 (en) * | 2018-03-14 | 2019-09-19 | IMMS Institut für Mikroelektronik- und Mechatronik-Systeme gemeinnützige GmbH (IMMS GmbH) | Arrangement for detecting the relative position of a measuring head |
| CN110793433A (en) * | 2019-09-26 | 2020-02-14 | 西安交通大学 | On-line calibration wafer micro-nano step height standard template and tracking method thereof |
-
2020
- 2020-04-24 CN CN202010334963.0A patent/CN111573616B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101996868A (en) * | 2009-08-27 | 2011-03-30 | 上海华虹Nec电子有限公司 | Forming method of P-type and N-type semiconductor thin layers arranged in alternant mode |
| CN102024848A (en) * | 2010-11-04 | 2011-04-20 | 天津环鑫科技发展有限公司 | Trench structure for power device and manufacturing method thereof |
| CN107248495A (en) * | 2017-06-20 | 2017-10-13 | 上海华力微电子有限公司 | A kind of method that high-aspect-ratio isolation is formed in energetic ion injection technology |
| DE102018105922A1 (en) * | 2018-03-14 | 2019-09-19 | IMMS Institut für Mikroelektronik- und Mechatronik-Systeme gemeinnützige GmbH (IMMS GmbH) | Arrangement for detecting the relative position of a measuring head |
| CN109346421A (en) * | 2018-09-29 | 2019-02-15 | 中国电子科技集团公司第十三研究所 | The valued methods of line-spacing standard sample of photo |
| CN109545855A (en) * | 2018-11-19 | 2019-03-29 | 中国科学院微电子研究所 | Preparation method of active region of silicon carbide double-groove MOSFET device |
| CN109444472A (en) * | 2018-12-19 | 2019-03-08 | 中国电子科技集团公司第十三研究所 | Scanning electron microscope alignment pattern print and preparation method |
| CN109855572A (en) * | 2018-12-25 | 2019-06-07 | 中国电子科技集团公司第十三研究所 | For calibrating the line-spacing template and preparation method of optical profilometer roughness |
| CN110793433A (en) * | 2019-09-26 | 2020-02-14 | 西安交通大学 | On-line calibration wafer micro-nano step height standard template and tracking method thereof |
Non-Patent Citations (4)
| Title |
|---|
| 冯亚南等.纳米台阶高度标准样块的研制与评价.宇航计测技术,第 36 卷,第 5期.2016,第第 36 卷卷(第第 5期期),第63-67页. * |
| 冯亚南等.纳米台阶高度标准样块的研制与评价.宇航计测技术.2016,第36卷(第5期),第63-67页. * |
| 微纳米标准样板的制备与表征;曲金成;中国优秀硕士学位论文全文数据库工程科技I辑;第18-37页 * |
| 曲金成.微纳米标准样板的制备与表征.中国优秀硕士学位论文全文数据库工程科技Ⅰ辑.2020,第18-37页. * |
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