CN111564533A - Preparation method of 1550nm waveband single photon source, single photon source and optical device - Google Patents
Preparation method of 1550nm waveband single photon source, single photon source and optical device Download PDFInfo
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
- H01L33/343—Materials of the light emitting region containing only elements of Group IV of the Periodic Table characterised by the doping materials
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Abstract
The invention discloses a preparation method of a 1550nm waveband single photon source, a single photon source and an optical device, wherein a silicon oxide layer is prepared on a 0001 surface of a SiC wafer; ion implantation; bonding with another SiC substrate with a silicon oxide dielectric layer along the surface of the silicon oxide; annealing and stripping, and transferring the SiC film onto the SiC substrate; preparing a mask on the SiC film, and removing the mask pattern to expose the SiC film; v, ion implantation and then removal of the mask region; the method comprises the steps of preparing a C film, activating V ion doping, transferring a SiC film to a substrate through ion injection, and preparing a 1550nm communication waveband single photon source, effectively solves the problems that the preparation of the 1550nm light source of the current photonics platform is difficult, and the integration of the single photon source and an optical device is difficult, obtains the 1550nm communication light source with high uniformity and high quality on the SiC platform, and realizes the integration of the single photon source and the device on the same platform.
Description
Technical Field
The invention relates to the technical field of electronic information functional materials and devices, in particular to a preparation method of a 1550nm waveband single photon source, a single photon source and an optical device.
Background
As a representative material in the third generation semiconductor, SiC (silicon carbide) combines a wide bandgap (2.4eV to 3.2eV), a high physical strength (Mohs hardness 9.5, Knoop hardness 2480 kg/mm)2) The material has the excellent characteristics of high thermal conductivity (480W/mK), high corrosion resistance, high melting point, high optical second-order and third-order nonlinear coefficients, wide light transmission window (0.37-5.6 mu m), wide defect light-emitting window (visible light to middle infrared) and the like, and is an ideal material for integrating optics, nonlinearity and optomechanical devices. The high refractive index realizes high limitation of an optical mode, and brings greater flexibility in the dispersion field; the wide band gap minimizes light absorption loss at high power; the high second and third order allows for excellent performance of SiC in nonlinear optical applications; the wide defect light-emitting window makes the wide defect light-emitting window an ideal material for a light source, particularly the light-emitting waveband of a V ion defect formed by V ion doped single crystal SiC is located at 1550nm, so that the SiC platform is an ideal platform for manufacturing a 1550nm waveband integrated photonic system.
SiC materials have more than 200 crystal forms, with 3C-SiC, 4H-SiC and 6H-SiC being the most used. The 3C-SiC film is mainly formed by depositing a SiC film on the surface of a Si substrate by utilizing methods of Atmospheric Pressure Chemical Vapor Deposition (APCVD) and Reduced Pressure Chemical Vapor Deposition (RPCVD), and the 3C-SiC film prepared by the method is mainly a polycrystalline film, and the crystal quality cannot reach single crystal. However, since the growth temperature of 4H-SiC and 6H-SiC is higher than the melting point temperature of silicon, a single crystal SiC film can not be grown on a silicon substrate by the traditional film deposition heteroepitaxy method, and the performance of an optical device is reduced because the SiC film homoepitaxy on SiC is not blocked by an intermediate oxide layer. This therefore creates difficulties in the growth of SiC thin films for integrated optical applications. However, it is difficult to directly process the bulk material because of the properties of SiC such as high hardness and corrosion resistance. At present, there are two main methods for preparing a high-uniformity SiC heterogeneous integrated thin film known in the prior art, one is a method of intelligent peeling by ion implantation, and the other is a method of mechanical grinding and thinning after bonding. The former causes the problem of device performance reduction due to the damage of ion implantation, while the latter causes the problem of uncontrollable preparation due to the extremely poor control of the thinning process on the thickness of the thin film and large deviation of the thickness of the thin film, which easily causes the large performance difference between devices. In optical communication and quantum communication, 1550nm is the minimum loss wavelength in optical fiber transmission, so that the preparation of a 1550nm single photon source has important significance, however, the traditional Si-based optical platform faces the problem of difficulty in preparing a 1550nm light source, the light source and the Si-based optical device are difficult to integrate on the same platform, at present, discrete devices are combined into a whole set of system, the coupling loss is large, and the application in nonlinear optics is difficult.
In view of the above, it is necessary to provide a method for preparing a 1550nm band single photon source, a single photon source and an optical device to solve the above technical problems.
Disclosure of Invention
The invention aims to provide a preparation method of a 1550nm waveband single photon source, a single photon source and an optical device, which are used for solving the technical problems in the background technology.
The invention is realized by the following technical scheme:
the invention provides a preparation method of a 1550nm waveband single photon source, which at least comprises the following steps:
providing a SiC wafer, and forming a silicon oxide protective layer on a <0001> surface of the SiC wafer;
performing ion implantation on the SiC wafer to form an implantation structure with a defect layer in the SiC wafer;
providing a SiC substrate with a silicon oxide dielectric layer, and bonding the injection structure with the silicon oxide dielectric layer along the surface of the silicon oxide protective layer to form a bonding structure;
annealing and stripping the bonding structure, separating the bonding structure at the defect layer to obtain a SiC film on the SiC substrate, and performing post-treatment on the SiC film;
forming a mask consisting of a circular mask pattern array on the surface of the SiC film, and removing the circular mask pattern array to expose the SiC film;
performing V ion implantation on the bonding structure, and then removing the mask to form a V-implanted SiC film array region;
and preparing a C film on the V-implanted SiC film array region, and carrying out post-annealing treatment to activate the doping of V ions to form a 1550nm single photon source.
Further, in the step of providing a SiC wafer and forming a silicon oxide protective layer on a <0001> surface of the SiC wafer, the thickness of the silicon oxide protective layer is 100nm to 5 μm; the forming method of the silicon oxide protective layer is a wet thermal oxidation method, the thermal oxidation temperature is 1000-1150 ℃, and the oxidation time is 10 min-24 h.
Further, in the step of performing ion implantation on the SiC wafer to form an implanted structure having a defect layer inside the SiC wafer, the ion implantation is performed along the SiC wafer<0001>Implanting ions at a surface of H or He at a dose of 1 × 1015cm-2～1×1018cm-2The implantation energy is 20 keV-2 MeV.
Further, in the step of providing a SiC substrate with a silicon oxide dielectric layer, and bonding the injection structure with the silicon oxide dielectric layer along the surface of the silicon oxide protective layer to form a bonding structure, the thickness of the SiC substrate is 300-500 μm, and the thickness of the silicon oxide dielectric layer is 0 nm-5 μm; the bonding mode is direct bonding, and the bonding temperature is room temperature-800 ℃.
Further, providing a SiC substrate with a silicon oxide dielectric layer, and bonding the injection structure with the silicon oxide dielectric layer along the surface of the silicon oxide protective layer to form a bonding junctionIn the step of forming, before bonding, plasma activation treatment is applied to the surface of the implanted structure and the surface of the SiC substrate, and the gas used for plasma activation is N2、O2And Ar.
Further, in the step of annealing and peeling the bonding structure, separating the bonding structure at the defect layer to obtain a SiC film on the SiC substrate, and performing post-treatment on the SiC film, the annealing temperature is 500-1300 ℃, the annealing time is 0.5-24 h, the annealing atmosphere is any one of nitrogen, argon, hydrogen and vacuum, the post-treatment method is any one of high-temperature annealing, chemical mechanical polishing, reactive ion etching, ion beam etching and ion beam glancing incidence polishing, wherein the high-temperature annealing temperature is 900-1500 ℃.
Further, in the step of forming a mask consisting of a circular mask pattern array on the surface of the SiC thin film and removing the circular mask pattern array to expose the SiC thin film, the thickness of the mask is 1-5 μm, the diameter of each circular mask pattern is 0.5-5 mm, the interval between every two adjacent circular mask patterns is 100-5 mm, and the circular mask patterns form a regular array on the surface of the SiC wafer.
Further, in the step of performing V ion implantation on the bonding structure, removing the mask region and leaving the SiC thin film array region implanted with V, the V ion implantation is performed along the surface of the SiC thin film, the implantation energy is 20 keV-10 MeV, and the implantation dose is 1 × 1013～1×1019cm-2(ii) a And removing the mask region by using a stripping process, wherein the solution is any one of degumming solution, concentrated sulfuric acid, acetone and alcohol.
Further, in the step of preparing a C film on the surface of the bonding structure, carrying out post annealing treatment to activate the doping of V ions and form a 1550nm single photon source, the thickness of the C film is 50 nm-1 μm, and the preparation method is a magnetron sputtering or photoresist carbonization method; the annealing temperature is 1200-1500 ℃, and the annealing atmosphere is any one of nitrogen, argon, hydrogen and vacuum.
The invention provides a 1550nm waveband single photon source, which is prepared by adopting the preparation method of the 1550nm waveband single photon source.
The third aspect of the invention provides an optical device, which is prepared based on the 1550nm waveband single-photon source.
Further, the optical device has a height of not more than 5 μm and a width of not more than 10 μm.
Further, a silicon oxide layer used for limiting an optical mode field is covered on the surface of the corresponding SiC thin film on the optical device, and the thickness of the silicon oxide layer is not more than 5 μm.
The implementation of the invention has the following beneficial effects:
the invention transfers the SiC film to a consistent substrate through ion implantation, and prepares the 1550nm communication waveband single photon source by manufacturing a mask, injecting V ions, stripping the mask, preparing a C film and activating V ion doping.
Drawings
To more clearly illustrate the embodiments and advantages of the present invention or the technical solutions and advantages of the prior art, the drawings used in the description of the embodiments and the prior art will be briefly described below, and it should be noted that the drawings are not drawn to scale, and all of the drawings are in a very simplified form, which is only used for the purpose of conveniently and clearly assisting in the description of the embodiments. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 is a flow chart of a method for producing a single photon source in an embodiment of the present invention;
FIG. 2 is a schematic structural diagram corresponding to step S1 in the method for manufacturing a single-photon source according to the embodiment of the invention;
FIG. 3 is a schematic structural diagram corresponding to step S2 in the method for manufacturing a single-photon source according to the embodiment of the invention;
FIG. 4 is a schematic structural diagram corresponding to step S3 in the method for manufacturing a single-photon source according to the embodiment of the invention;
FIG. 5 is a schematic structural diagram corresponding to step S4 in the method for manufacturing a single-photon source according to the embodiment of the invention;
FIG. 6 is a schematic structural diagram corresponding to step S5 in the method for manufacturing a single-photon source according to the embodiment of the invention;
FIG. 7 is a schematic structural diagram corresponding to step S6 in the method for manufacturing a single-photon source according to an embodiment of the invention;
FIG. 8 is a schematic structural diagram corresponding to step S7 in the method for manufacturing a single-photon source according to an embodiment of the invention;
FIG. 9 is a schematic diagram of the fabrication of an integrated optical device based on a single photon source in an embodiment of the invention;
wherein the reference numerals in the figures correspond to: the device comprises a 1-SiC wafer, a 2-silicon oxide protective layer, a 3-defect layer, a 4-SiC substrate, a 5-silicon oxide dielectric layer, a 6-bonding structure, a 7-SiC film, an 8-mask, a 9-V-implanted SiC film and a 10-C film.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the following examples. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
The embodiment provides a preparation method of a 1550nm waveband single photon source, which at least comprises the following steps:
s1, providing a SiC wafer 1, and forming a silicon oxide protective layer 2 on the <0001> surface of the SiC wafer 1 by a wet thermal oxidation method, wherein the thermal oxidation temperature is 1000 ℃, the oxidation time is 24 hours, and the thickness of the silicon oxide protective layer 2 is 5 μm;
s2, implanting ions along<0001>H ion implantation was performed on the SiC wafer 1 to form an implanted structure having a defect layer 3 in the SiC wafer 1 at an implant dose of 1 × 1018cm-2The injection energy is 2 MeV;
s3, providing a polycrystalline SiC substrate 4 with a silicon oxide dielectric layer 5, and bonding an injection structure with the silicon oxide dielectric layer 5 along the surface of a silicon oxide protective layer 2 to form a bonding structure 6, wherein the thickness of the SiC substrate 4 is 300 microns, the thickness of the silicon oxide dielectric layer 5 is 0.5 microns, the growth method of the silicon oxide dielectric layer 5 is thermal oxidation, and the processing method is chemical mechanical polishing; the gas used for plasma activation before bonding is N2The bonding mode is direct bonding, and the bonding environment is N2The bonding temperature is 100 ℃;
s4, annealing and peeling the bonding structure 6, wherein the annealing temperature is 900 ℃, the annealing time is 0.5h, the annealing atmosphere is nitrogen, the SiC film 7 is transferred onto the SiC substrate, the post-treatment method is high-temperature annealing, and the high-temperature annealing temperature is 900 ℃;
s5, forming a mask 8 consisting of a circular mask pattern array on the surface of the SiC film 7, wherein the thickness of the mask 8 is 5 microns, the diameter of the circular mask pattern is 5mm, the interval between two adjacent circular mask patterns is 4mm, the circular mask patterns form a regular array on the surface of the SiC wafer, and then removing the circular mask pattern array to expose the SiC film 7;
s6, carrying out V ion implantation on the bonding structure 6 along the surface of the SiC film 7, wherein the implantation energy is 20keV, and the implantation dosage is 1 × 1013cm-2Then, a stripping process is used for removing the mask area, the type of solution adopted by the stripping process is photoresist removing liquid, and a SiC film 9 array area of the bottom film V is reserved;
s7, preparing a C film 10 on the surface of the bonding structure by magnetron sputtering, wherein the thickness of the C film 10 is 50nm, performing post annealing treatment to activate doping of V ions, and forming a 1550nm single photon source at the annealing temperature of 1300 ℃ under the annealing atmosphere of nitrogen.
In the embodiment, the SiC film is transferred to a substrate through ion implantation, and a 1550nm communication waveband single photon source is prepared in a specific area, so that the problems of difficulty in preparing a 1550nm light source of the current photonic platform and difficulty in integrating a source and an optical device can be effectively solved, the 1550nm communication light source with high uniformity and high quality is obtained on the SiC platform, and the integration of the source and the device on the same platform is realized; the invention realizes the preparation of high-quality SiC single crystal films, and the arrayed controllable preparation of high-performance photonic devices with 1550nm communication wave bands; and the uniform integration of the whole optical system on the SiC platform is realized, and the development and the application of the SiC film material in the field of integrated photonic devices are promoted.
Example 2
The embodiment provides a preparation method of a 1550nm waveband single photon source, which at least comprises the following steps:
s1, providing a SiC wafer 1, and forming a silicon oxide protective layer 2 on the <0001> surface of the SiC wafer 1 by a wet thermal oxidation method, wherein the thermal oxidation temperature is 1000 ℃, the oxidation time is 2h, and the thickness of the silicon oxide protective layer 2 is 3 μm;
s2, implanting ions along<0001>H ion implantation was performed on the SiC wafer 1 to form an implanted structure having a defect layer 3 in the SiC wafer 1 at an implant dose of 1 × 1017cm-2The injection energy is 1.5 MeV;
s3, providing a polycrystalline SiC substrate 4 with a silicon oxide dielectric layer 5, and bonding an injection structure with the silicon oxide dielectric layer 5 along the surface of a silicon oxide protective layer 2 to form a bonding structure 6, wherein the thickness of the SiC substrate 4 is 350 microns, the thickness of the silicon oxide dielectric layer is 0nm, the growth method of the silicon oxide dielectric layer is thermal oxidation, and the processing method is chemical mechanical polishing; the gas used for plasma activation before bonding is Ar, the bonding mode is direct bonding, and the bonding environment is N2The bonding temperature is room temperature;
s4, annealing and stripping the bonding structure 6, wherein the annealing temperature is 1300 ℃, the annealing time is 0.5h, the annealing atmosphere is hydrogen, the SiC film 7 is transferred onto the SiC substrate, and the SiC film 7 is subjected to post-treatment, wherein the post-treatment method is high-temperature annealing, and the high-temperature annealing temperature is 1200 ℃;
s5, forming a mask 8 consisting of a circular mask pattern array on the surface of the SiC film 7, wherein the thickness of the mask 8 is 5 microns, the diameter of each circular mask pattern is 4mm, the interval between every two adjacent circular mask patterns is 3mm, the circular mask patterns form a regular array on the surface of the SiC wafer, and then removing the circular mask pattern array to expose the SiC film 7;
s6, carrying out V ion implantation on the bonding structure 6 along the surface of the SiC film 7, wherein the implantation energy is 200keV, and the implantation dosage is 1 × 1014cm-2Then, a stripping process is used for removing the mask area, the type of solution adopted by the stripping process is photoresist removing liquid, and a SiC film 9 array area of the bottom film V is reserved;
s7, preparing a C film 10 on the surface of the bonding structure 6 by magnetron sputtering, wherein the thickness of the C film 10 is 100nm, performing post annealing treatment to activate doping of V ions, and forming a 1550nm single photon source at the annealing temperature of 1300 ℃ under the annealing atmosphere of nitrogen.
Example 3
The embodiment provides a preparation method of a 1550nm waveband single photon source, which at least comprises the following steps:
s1, providing a SiC wafer 1, and forming a silicon oxide protective layer 2 on the <0001> surface of the SiC wafer 1 by a wet thermal oxidation method, wherein the thermal oxidation temperature is 1150 ℃, the oxidation time is 10min, and the thickness of the silicon oxide protective layer 2 is 200 nm;
s2, implanting ions along<0001>He ion implantation was performed on the SiC wafer 1 to form an implanted structure having a defect layer 3 in the SiC wafer 1 at an implant dose of 1 × 1017cm-2The injection energy is 1 MeV;
s3, providing a α -SiC substrate 4 with a silicon oxide dielectric layer 5, bonding an injection structure with the silicon oxide dielectric layer 5 along the surface of a silicon oxide protective layer 2 to form a bonding structure 6, wherein the thickness of the SiC substrate 4 is 400 microns, the thickness of the silicon oxide dielectric layer 5 is 2 microns, the growth method of the silicon oxide dielectric layer 5 is vapor phase chemical deposition, the processing method is chemical mechanical polishing, the gas used for plasma activation before bonding is O2The bonding mode is direct bonding, the bonding environment is the atmosphere, and the bonding temperature is 300 ℃;
s4, annealing and stripping the bonding structure 6, wherein the annealing temperature is 1000 ℃, the annealing time is 1h, the annealing atmosphere is argon, the SiC film 7 is transferred onto the SiC substrate 4, and the SiC film 7 is subjected to post-treatment, wherein the post-treatment method is high-temperature annealing, and the high-temperature annealing temperature is 1500 ℃;
s5, forming a mask 8 consisting of a circular mask pattern array on the surface of the SiC film 7, wherein the thickness of the mask 8 is 4 microns, the diameter of the circular mask pattern is 3mm, the interval between two adjacent circular mask patterns is 5mm, the circular mask patterns form a regular array on the surface of the SiC wafer, and then removing the circular mask pattern array to expose the SiC film 7;
s6, carrying out V ion implantation on the bonding structure 6 along the surface of the SiC film 7, wherein the implantation energy is 500keV, and the implantation dosage is 1 × 1015cm-2Then, a stripping process is used for removing the mask area, the type of solution adopted by the stripping process is concentrated sulfuric acid, and a SiC film 9 array area of the bottom film V is reserved;
s7, preparing the C film 10 on the surface of the bonding structure 6 by adopting a photoresist carbonization method, wherein the thickness of the C film 10 is 200nm, then carrying out post-annealing treatment to activate the doping of V ions, the annealing temperature is 1400 ℃, and the annealing atmosphere is argon gas, so that a 1550nm single photon source is formed.
Example 4
The embodiment provides a preparation method of a 1550nm waveband single photon source, which at least comprises the following steps:
s1, providing a SiC wafer 1, and forming a silicon oxide protective layer 2 on the <0001> surface of the SiC wafer 1 by a wet thermal oxidation method, wherein the thermal oxidation temperature is 1100 ℃, the oxidation time is 10 hours, and the thickness of the silicon oxide protective layer 2 is 2 μm;
s2, implanting ions along<0001>H ion implantation was performed on the SiC wafer 1 to form an implanted structure having a defect layer 3 in the SiC wafer 1 at an implant dose of 1 × 1015cm-2The injection energy is 0.5 MeV;
s3, providing a α -SiC substrate 4 with a silicon oxide dielectric layer 5, and bonding the injection structure with the silicon oxide dielectric layer 5 along the surface of the silicon oxide protective layer 2 to form a bonding structure 6, wherein the thickness of the SiC substrate 4 is 450 mu m, and the thickness of the silicon oxide dielectric layer 5 is 450 mu mThe thickness is 3 mu m, the growth method of the silicon oxide dielectric layer 5 is vapor chemical deposition, and the processing method is chemical mechanical polishing; the gas used for plasma activation before bonding is N2The bonding mode is direct bonding, the bonding environment is atmosphere, and the bonding temperature is 400 ℃;
s4, annealing and stripping the bonding structure 6, wherein the annealing temperature is 800 ℃, the annealing time is 5 hours, the annealing atmosphere is vacuum, the SiC film 6 is transferred onto the SiC substrate 4, and the SiC film 7 is subjected to post-treatment, wherein the post-treatment method is chemical mechanical polishing;
s5, forming a mask 8 consisting of a circular mask pattern array on the surface of the SiC thin film 7, wherein the thickness of the mask 8 is 0.5 μm, the diameter of the circular mask pattern is 2mm, the interval between two adjacent circular mask patterns is 1mm, the circular mask patterns form a regular array on the surface of the SiC wafer, and then removing the circular mask pattern array to expose the SiC thin film 7;
s6, carrying out V ion implantation on the bonding structure 6 along the surface of the SiC film 7, wherein the implantation energy is 1MeV, and the implantation dosage is 1 × 1016cm-2Then, a stripping process is used for removing the mask area, the type of solution adopted by the stripping process is concentrated sulfuric acid, and a SiC film 9 array area of the bottom film V is reserved;
s7, preparing the C film 10 on the surface of the bonding structure 6 by adopting a photoresist carbonization method, wherein the thickness of the C film 10 is 500nm, performing post annealing treatment to activate the doping of V ions, and forming a 1550nm single photon source by annealing at 1500 ℃ in argon atmosphere.
Example 5
The embodiment provides a preparation method of a 1550nm waveband single photon source, which at least comprises the following steps:
s1, providing a SiC wafer 1, and forming a silicon oxide protective layer 2 on the <0001> surface of the SiC wafer 1 by adopting a plasma enhanced chemical vapor deposition method, wherein the thickness of the silicon oxide protective layer 2 is 1 μm;
s2, implanting ions along<0001>He ion implantation was performed on the SiC wafer 1 to form an implanted structure having a defect layer 3 in the SiC wafer 1, and the implantation dose was 8 × 1016cm-2The implantation energy is 500 keV;
s3, providing a beta-SiC substrate 4 with a silicon oxide dielectric layer 5, and bonding an injection structure with the silicon oxide dielectric layer 5 along the surface of a silicon oxide protective layer 2 to form a bonding structure 6, wherein the thickness of the SiC substrate 4 is 500 microns, the thickness of the silicon oxide dielectric layer 5 is 4 microns, the growth method of the silicon oxide dielectric layer 5 is vapor chemical deposition, and the processing method is chemical mechanical polishing; the gas used for plasma activation before bonding is Ar, the bonding mode is direct bonding, the bonding environment is atmosphere, and the bonding temperature is 600 ℃;
s4, annealing and stripping the bonding structure 6, wherein the annealing temperature is 750 ℃, the annealing time is 10 hours, the annealing atmosphere is hydrogen, the SiC film 7 is transferred onto the SiC substrate, and the SiC film 7 is subjected to post-treatment, wherein the post-treatment method is reactive ion etching;
s5, forming a mask 8 consisting of a circular mask pattern array on the surface of the SiC film 7, wherein the thickness of the mask 8 is 3 microns, the diameter of the circular mask pattern is 1mm, the interval between two adjacent circular mask patterns is 2mm, the circular mask patterns form a regular array on the surface of the SiC wafer, and then removing the circular mask pattern array to expose the SiC film 7;
s6, carrying out V ion implantation on the bonding structure 6 along the surface of the SiC film 7, wherein the implantation energy is 2MeV, and the implantation dosage is 1 × 1017cm-2Then, removing the mask region by utilizing a stripping process, wherein the type of solution adopted by the stripping process is acetone, and reserving a SiC film 9 array region for injecting the liquid V;
s7, preparing the C film 10 on the surface of the bonding structure 6 by adopting a photoresist carbonization method, wherein the thickness of the C film 10 is 600nm, performing post annealing treatment to activate the doping of V ions, and forming a 1550nm single photon source at the annealing temperature of 1200 ℃ in the annealing atmosphere of hydrogen.
Example 6
The embodiment provides a preparation method of a 1550nm waveband single photon source, which at least comprises the following steps:
s1, providing a SiC wafer 1, and forming a silicon oxide protective layer 2 on the <0001> surface of the SiC wafer 1 by adopting a low-pressure chemical vapor deposition method, wherein the thickness of the silicon oxide protective layer 2 is 0.5 mu m;
s2, implanting ions along<0001>He ion implantation was performed on the SiC wafer 1 to form an implanted structure having a defect layer 3 in the SiC wafer 1 at an implant dose of 1 × 1018cm-2The implantation energy is 20 keV;
s3, providing a β -SiC substrate 4 with a silicon oxide dielectric layer 5, bonding an injection structure with the silicon oxide dielectric layer 5 along the surface of a silicon oxide protective layer 2 to form a bonding structure 6, wherein the thickness of the SiC substrate 4 is 300 mu m, the thickness of the silicon oxide dielectric layer 5 is 4.5 mu m, the growth method of the silicon oxide dielectric layer 5 is thermal oxidation, the processing method is chemical mechanical polishing, the gas used for plasma activation before bonding is O2The bonding mode is direct bonding, the bonding environment is vacuum, and the bonding temperature is 700 ℃;
s4, annealing and stripping the bonding structure 6, wherein the annealing temperature is 900 ℃, the annealing time is 20 hours, the annealing atmosphere is argon, the SiC film 7 is transferred onto the SiC substrate, and the SiC film 7 is subjected to post-treatment, wherein the post-treatment method is ion beam etching;
s5, forming a mask 8 consisting of a circular mask pattern array on the surface of the SiC thin film 7, wherein the thickness of the mask 8 is 2 microns, the diameter of each circular mask pattern is 0.5mm, the interval between every two adjacent circular mask patterns is 100nm, the circular mask patterns form a regular array on the surface of the SiC wafer, and then removing the circular mask pattern array to expose the SiC thin film 7;
s6, carrying out V ion implantation on the bonding structure 6 along the surface of the SiC film 7, wherein the implantation energy is 5MeV, and the implantation dosage is 1 × 1018cm-2Then, removing the mask region by utilizing a stripping process, wherein the type of solution adopted by the stripping process is acetone, and reserving a SiC film 9 array region for injecting the liquid V;
s7, preparing the C film 10 on the surface of the bonding structure 6 by adopting a photoresist carbonization method, wherein the thickness of the C film 10 is 800nm, then carrying out post annealing treatment to activate the doping of V ions, the annealing temperature is 1300 ℃, and the annealing atmosphere is hydrogen to form a 1550nm single photon source.
Example 7
The embodiment provides a preparation method of a 1550nm waveband single photon source, which at least comprises the following steps:
s1, providing a SiC wafer 1, and forming a silicon oxide protective layer 2 on the <0001> surface of the SiC wafer 1 by adopting a low-pressure chemical vapor deposition method, wherein the thickness of the silicon oxide protective layer 2 is 100 nm;
s2, implanting ions along<0001>H ion implantation was performed on the SiC wafer 1 to form an implanted structure having a defect layer 3 in the SiC wafer 1 at an implant dose of 5 × 1015cm-2The implantation energy is 50 keV;
s3, providing a polycrystalline SiC substrate 4 with a silicon oxide dielectric layer 5, and bonding an injection structure with the silicon oxide dielectric layer 5 along the surface of a silicon oxide protective layer 2 to form a bonding structure 6, wherein the thickness of the SiC substrate 4 is 500 microns, the thickness of the silicon oxide dielectric layer 5 is 5 microns, the growth method of the silicon oxide dielectric layer 5 is thermal oxidation, and the processing method is chemical mechanical polishing; the gas used for plasma activation before bonding is N2The bonding mode is direct bonding, the bonding environment is vacuum, and the bonding temperature is 800 ℃;
s4, annealing and stripping the bonding structure 6, wherein the annealing temperature is 500 ℃, the annealing time is 24 hours, the annealing atmosphere is nitrogen, the SiC film 7 is transferred onto the SiC substrate 4, and the SiC film 7 is subjected to post-treatment, wherein the post-treatment method is ion beam glancing incidence polishing;
s5, forming a mask 8 consisting of a circular mask pattern array on the surface of the SiC thin film 7, wherein the thickness of the mask 8 is 1 μm, the diameter of the circular mask pattern is 0.5 μm, the interval between two adjacent circular mask patterns is 0.5mm, the circular mask patterns form a regular array on the surface of the SiC wafer, and then removing the circular mask pattern array to expose the SiC thin film 7;
s6, carrying out V ion implantation on the bonding structure 6 along the surface of the SiC film 7, wherein the implantation energy is 10MeV, and the implantation dosage is 1 × 1019cm-2Then, removing the mask region by utilizing a stripping process, wherein the type of the solution adopted by the stripping process is alcohol, and reserving a SiC film 9 array region for injecting the liquid V;
s7, preparing a C film 10 on the surface of the bonding structure 6 by adopting a photoresist carbonization method, wherein the thickness of the C film 10 is 1 μm, performing post annealing treatment to activate the doping of V ions, and forming a 1550nm single photon source by annealing at 1400 ℃ in a vacuum atmosphere.
In the above embodiment, in step S1, the oxidation rate of the wet oxidation method gradually decreases with the increase of the thickness, and the oxidation time is set to 10min to 24h to form the silicon oxide protective layer with the target thickness. In step S2, the SiC lift-off process generally uses light ions, usually H or He, and the use of H is more common and easier, the larger the implantation energy, the higher the ion dose required for lift-off for the lift-off mechanism. In step S3, room temperature is a conventional process of bonding, and high temperature bonding is an improved process for balancing thermal stress between SiC and the substrate, so that the substrate of the bonded structure has less bending and is flatter. In step S4, the time required for the annealing process varies greatly according to the temperature, and is fast at high temperature and slow at low temperature, and the annealing time is 0.5-24 hours at an annealing temperature of 500-1300 ℃. In step S5, the pattern range diameter is set larger than the size of the entire device. In step S7, the C film prepared by the photoresist carbonization method is thicker than the C film prepared by the magnetron sputtering method, and the C film prepared by the magnetron sputtering method has a thickness of 50nm to 100 nm.
Example 8
The embodiment provides a 1550nm waveband single photon source, and the single photon source in the embodiment is prepared by adopting the preparation method of the 1550nm waveband single photon source in the embodiment.
Example 9
This example provides an optical device, and the optical device in this example is prepared based on the 1550nm band single photon source in the above example.
As a specific implementation mode, on the basis of the 1550nm waveband single photon source prepared in the example 8, the C film is removed after post annealing, and the method comprises but is not limited to wet etching, dry plasma reaction etching and the like.
As a specific implementation manner, the optical device prepared in this embodiment includes device structures such as modulators, waveguides, micro-cavities, etc., and the preparation method includes, but is not limited to, electron beam exposure, plasma reactive etching, etc., and the gas used in plasma reactive etching includes, but is not limited to, SF6, CF4, O2, Ar, etc.
As a specific implementation mode, the total size of the prepared single SiC device structure is 0-200 mu m, the height is 0-5 mu m, and the width is 0-10 mu m.
As a specific embodiment, after the device structure is prepared, the surface of the bonded structure SiC film is covered with a SiO2 layer for limiting the optical mode field, the thickness of SiO2 is 0 nm-5 μm, the growth method includes but is not limited to a plasma enhanced chemical vapor deposition method, a low-pressure chemical vapor deposition method and the like, and the treatment method includes but is not limited to chemical mechanical polishing and the like.
The above embodiment of the invention has the following beneficial effects:
the invention transfers the SiC film to a consistent substrate through ion implantation, and prepares the 1550nm communication waveband single photon source by manufacturing a mask, injecting V ions, stripping the mask, preparing a C film and activating V ion doping.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (13)
1. A preparation method of a 1550nm waveband single photon source is characterized by at least comprising the following steps:
providing a SiC wafer, and forming a silicon oxide protective layer on a <0001> surface of the SiC wafer;
performing ion implantation on the SiC wafer to form an implantation structure with a defect layer in the SiC wafer;
providing a SiC substrate with a silicon oxide dielectric layer, and bonding the injection structure with the silicon oxide dielectric layer along the surface of the silicon oxide protective layer to form a bonding structure;
annealing and stripping the bonding structure, separating the bonding structure at the defect layer to obtain a SiC film on the SiC substrate, and performing post-treatment on the SiC film;
forming a mask consisting of a circular mask pattern array on the surface of the SiC film, and removing the circular mask pattern array to expose the SiC film;
performing V ion implantation on the bonding structure, and then removing the mask to form a V-implanted SiC film array region;
and preparing a C film on the V-implanted SiC film array region, and carrying out post-annealing treatment to activate the doping of V ions to form a 1550nm single photon source.
2. The method for preparing a 1550nm band single photon source as claimed in claim 1, wherein in the step of providing a SiC wafer, and forming a silicon oxide protective layer on a <0001> surface of the SiC wafer, the silicon oxide protective layer has a thickness of 100nm to 5 μm; the forming method of the silicon oxide protective layer is a wet thermal oxidation method, the thermal oxidation temperature is 1000-1150 ℃, and the oxidation time is 10 min-24 h.
3. The method for preparing a 1550nm band single photon source as claimed in claim 1, wherein in the step of performing ion implantation on the SiC wafer to form an implanted structure having a defect layer inside the SiC wafer, the implantation is performed along the SiC wafer<0001>Implanting ions at a surface of H or He at a dose of 1 × 1015cm-2～1×1018cm-2The implantation energy is 20 keV-2 MeV.
4. The method for preparing a 1550nm band single photon source according to claim 1, wherein in the step of providing a SiC substrate with a silicon oxide dielectric layer, and bonding the injection structure to the silicon oxide dielectric layer along the surface of the silicon oxide protection layer to form a bonded structure, the thickness of the SiC substrate is 300 to 500 μm, and the thickness of the silicon oxide dielectric layer is 0nm to 5 μm; the bonding mode is direct bonding, and the bonding temperature is room temperature-800 ℃.
5. The method for preparing a 1550nm band single photon source as claimed in claim 1, wherein in the step of providing a SiC substrate with a silicon oxide dielectric layer, bonding the implanted structure to the silicon oxide dielectric layer along the surface of the silicon oxide protective layer to form a bonded structure, plasma activation is performed on the implanted structure and the surface of the SiC substrate before bonding, and the gas used for plasma activation is N2、O2And Ar.
6. The method for preparing a 1550nm band single photon source according to claim 1, wherein in the step of annealing and peeling the bonded structure, the bonded structure is separated at the defect layer to obtain a SiC film on a SiC substrate, and the step of post-processing the SiC film, the annealing temperature is 500 to 1300 ℃, the annealing time is 0.5 to 24 hours, the annealing atmosphere is any one of nitrogen, argon, hydrogen and vacuum, the post-processing method is any one of high temperature annealing, chemical mechanical polishing, reactive ion etching, ion beam etching and ion beam glancing incidence polishing, wherein the high temperature annealing temperature is 900 to 1500 ℃.
7. The method for preparing a 1550nm band single photon source as claimed in claim 1, wherein the mask formed on the surface of the SiC film comprises a circular mask pattern array, and the circular mask pattern array is removed to expose the SiC film, wherein the mask has a thickness of 1-5 μm, the circular mask pattern has a diameter of 0.5-5 mm, a distance between two adjacent circular mask patterns is 100-5 mm, and the circular mask patterns form a regular array on the surface of the SiC wafer.
8. The method for preparing a 1550nm band single photon source as claimed in claim 1, wherein in the step of performing V ion implantation on the bonded structure and then removing the mask region to leave a V-implanted SiC thin film array region, the V ion implantation is performed along the surface of the SiC thin film, the implantation energy is 20keV to 10MeV, and the implantation dose is 1 × 10MeV13～1×1019cm-2(ii) a And removing the mask region by using a stripping process, wherein the solution is any one of degumming solution, concentrated sulfuric acid, acetone and alcohol.
9. The method for preparing a 1550nm band single photon source according to claim 1, wherein in the step of preparing a C film on the surface of the bonding structure and doping V ions by post-annealing treatment to form the 1550nm single photon source, the C film has a thickness of 50nm to 1 μm, and the preparation method is a magnetron sputtering method or a photoresist carbonization method; the annealing temperature is 1200-1500 ℃, and the annealing atmosphere is any one of nitrogen, argon, hydrogen and vacuum.
10. A 1550nm band single photon source, produced by a process for the production of a 1550nm band single photon source according to any one of claims 1 to 9.
11. An optical device, wherein the optical device is produced based on the 1550nm band single photon source of claim 10.
12. The optical device of claim 11, wherein the optical device has a height of no more than 5 μm and a width of no more than 10 μm.
13. The optical device according to claim 11, wherein a silicon oxide layer for limiting an optical mode field is coated on the surface of the corresponding SiC thin film on the optical device, and the thickness of the silicon oxide layer is not more than 5 μm.
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