CN1115570C - Solid dosage instrument capable of measuring total ionizing radiation dosage - Google Patents
Solid dosage instrument capable of measuring total ionizing radiation dosage Download PDFInfo
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- CN1115570C CN1115570C CN 98125702 CN98125702A CN1115570C CN 1115570 C CN1115570 C CN 1115570C CN 98125702 CN98125702 CN 98125702 CN 98125702 A CN98125702 A CN 98125702A CN 1115570 C CN1115570 C CN 1115570C
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- pmos
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Abstract
The present invention relates to a solid dosage instrument capable of measuring total ionizing radiation dosage. The hardware of the solid dosage instrument capable of measuring total ionizing radiation dosage is composed of a PMOS probe head, an irradiated sensitivity physical parameter-threshold voltage drift measuring circuit, a bias circuit of the PMOS probe head and a power supply, and the software of the solid dosage instrument capable of measuring total ionizing radiation dosage is composed of the measurement of the temperature characteristic of the PMOS probe head, the design of the temperature compensation of the circuit, the selection of the irradiated bias mode of the probe head and the calibration technique of irradiated response. A hardware circuit of the dosage instrument is simple and can be miniaturized. The present invention is particularly suitable for fields with a total dosage real-time monitoring requirement in a long distance, such as space detection, radiation medical treatment, nuclear industries, etc., and is also a new technique which is firstly used for the detection of space satellite environment in China.
Description
The invention belongs to a kind of ionising radiation accumulated dose measuring technique.Especially relating to space satellite uses.
It is after utilizing pmos fet (to call the PMOS probe in the following text) to be subjected to ionising radiation, oxide charge of inducting in its gate oxide and the silicon-increase of silicon dioxide interface state will cause the variation of device surface electromotive force, and the radiation integral dose of this variation and its absorption has the principle of linear approximate relationship, carrying out the measurement of integrated radiation dose, is a kind of relative radiation dose measurement technology.
The research of PMOS dosemeter is used and is abroad carried out early, from the eighties so far, the external PMOS dosemeter that repeatedly adopts on satellite has carried out successful lift-launch flight detection application, and begins to develop the different dosimeter of a series of sensitivity that is used for fields such as personal dose monitoring, medical radiotherapy dose monitoring, nuclear industry equipment and radiosterilization dose monitoring.In recent years, the PMOS dosemeter microminiaturized, and other circuit Mixed Design and manufacturing process, application technology aspect new progress is constantly arranged, become the goal in research that people comparatively pay close attention to.
At present, the application technology transformation and the probe quality of aspects such as the temperature characterisitic of popping one's head at PMOS, the permanent stability of electric charge record, high sensitivity, response linearity and response measurement technology improve still in the research that deepens continuously.Disclose a kind of PMOSFET dosemeter in the U.S. Pat 5332903, this dosemeter has the radiosensitivity of increasing and reduces temperature susceplibility, by eliminating temperature effect, obtains higher dosage reading accuracy.
At home, we are started in the beginning of the nineties to development, the development of PMOS dosemeter.It is domestic unit unique and that the earliest external this technology is carried out follow-up study, because a lot of crucial application technology of PMOS dosemeter can't be obtained from foreign literature, thereby, we from the state-variable of PMOS device to various conditions under the radiometric response characteristic start with, carry out a large amount of work of researching and analysing, obtained a lot of fruitful results.According to the result of study that obtains, development and design has gone out the special-purpose PMOS dosemeter of space satellite circuit, adopts and set up temperature compensation and scaling method.
The object of the invention is a kind of solid dosage instrument that can measure the ionising radiation accumulated dose, by the irradiation bias mode of the temperature compensation design of the temperature characteristic measuring that adds inclined to one side circuit and power supply and PMOS probe of the metering circuit of PMOS probe, radiation sensitive physical parameter-threshold voltage shift, PMOS probe, circuit, probe select, the irradiation response calibration technique forms.
These dosemeter characteristics: the real-time of measurement, low-function, measuring accuracy height (can reach 10%), circuit are simple, Miniaturized.Be to be specially adapted to the field that space flight detection, radiating medical, nuclear industry etc. require the remote accumulated dose of monitoring in real time.Also be that domestic beginning first Application is in the new technology of space satellite environment detection.Also be other measuring method, as: CaF2:Mn TLD, the p-i-N diode, nylon films etc. can't be compared and substitute, and simultaneously, its dosage measurement precision also is not less than above-mentioned several solid dosage instrument.
A kind of solid dosage instrument that can measure the ionising radiation accumulated dose of the present invention, by the metering circuit of PMOS probe, radiation sensitive physical parameter-threshold voltage shift, PMOS probe add inclined to one side circuit and power supply is formed, constitute the temperature characteristic measuring that need carry out the PMOS probe in this dosemeter process, the temperature compensation design of circuit, four kinds of processing successively that the irradiation bias mode is selected and irradiation response is demarcated of probe; The threshold voltage shift metering circuit of this instrument has comprised the constant current loop (1) that operational amplifier constitutes, isolate follower (3) by the sampling that operational amplifier constitutes, starting voltage that constitutes by operational amplifier and threshold voltage shift algorithm circuit (4) and the PMOS probe initial value reference voltage circuit (5) that constitutes by adjustable two end voltage stabilizers; The probe add inclined to one side circuit (2) by switch with provide the operational amplifier of constant current to constitute.The threshold voltage shift metering circuit is to adopt feedback self-stabilization technology, utilize the high open-loop gain of operational amplifier, constitute a constant current loop with PMOS probe, be implemented between the source-leakage of PMOS probe by a constant working current of choosing 10 microamperes or 20 microamperes of working currents.Threshold voltage shift algorithm circuit can comprise another kind of temperature compensation design, and promptly the temperature-sensitive resistor assembly is to the temperature compensation act of PMOS starting voltage initial value.Regulating resistor in the PMOS probe initial value reference voltage circuit (5) that three-port variable voltage regulator is constituted changes the thermistor component of the B value that meets the requirements into, has promptly realized the temperature compensation of dosemeter is designed.
The using method of this dosemeter is: the determining of zero-temperature coefficient electrical current is to obtain by the temperature characteristic measuring to the PMOS probe, and its method is as follows:
A, according to PMOS dosemeter applied environment temperature range-20 ℃-80 ℃, choose the temperature (containing the two ends temperature) more than three, record one group of I-V curve under each temperature, I-V measures and can adopt special I-V measuring instrument or arbitraryly possess voltage scanning, current measurement (I is measured electric current and is at least 10
-9A) instrument is finished.Draw the I-V curve group that records, find out the zero-temperature coefficient electrical current that the corresponding electric current of curved intersection point is this measuring sonde;
B, utilize PMOS dosemeter threshold voltage shift metering circuit or other can measure the multimeter of PMOS probe starting voltage, by increasing the work steady current gradually from 10 microamperes, under the transformation temperature environment, carry out starting voltage monitoring then, find out starting voltage and vary with temperature minimum working current and be zero-temperature coefficient electrical current.
The using method of this dosemeter is: the temperature compensation act of thermistor component starting voltage initial value is finished by following steps:
At first according to PMOS dosemeter applied environment temperature range (20 ℃-80 ℃), selected three and above temperature (containing the two ends temperature) determine initial (not irradiated) starting voltage, for example V of corresponding PMOS probe
T (20 ℃), V
T (25 ℃), V
T (80 ℃)
Output voltage (the V of next benchmark potential circuit (5)
R) and adjustable resistance (R
T) relation, V
R=f (R
t).
With V
TV in the substitution following formula
RThe resistance that obtains each temperature spot correspondence records resistance value V
-20 ℃, V
25 ℃, V
80 ℃
And then according to the resistance V of resulting different temperature points
-20 ℃, V
25 ℃, V
80 ℃Can obtain the B value of required thermistor component.
According to the thermistor component of required B value, and, promptly finished temperature compensation measure to the PMOS probe with the regulating resistor in its alternative PMOS dosemeter reference voltage circuit.
It is decide according to level of sensitivity, response linearity, power consumption constraints, the stability requirement of dosemeter designing requirement that the irradiation bias mode of PMOS in this dosemeter probe is selected, and this is to setover These parameters influenced the different reason of rule owing to irradiation.The PMOS probe calibration technique before application comprises determining of the choosing of irradiation bomb, irradiation dose and demarcates radiation dose rate and choose in the software.It is the demarcation source with the gamma-rays of 1.25MeV, 1.17MeV mainly.The demarcation dose rate that adopts is during less than certain certain value, better virtual space LDR radiation environment;
Irradiation dose define two kinds: the one, with the cobalt source (Co that demarcated
60 ΥΥ) carry out irradiation, irradiation dose can be determined by the accurate measurement to the time.The 2nd, demarcate with irradiation bombs such as X source or electron beams, adopt thermoluminescence sheet (TLD) irradiation simultaneously, with calorimeter it is carried out the method for scale.
Referring to accompanying drawing
Fig. 1 is a PMOS dosemeter schematic block circuit diagram of the present invention
Fig. 2 adds inclined to one side circuit for PMOS probe of the present invention
Dosemeter hardware is mainly finished the function of gathering the threshold voltage shift signal when being biased and measuring to by PMOS probe irradiation the time.Dosemeter software then is to improve PMOS dosemeter complete machine performance, the response calibration curve of realizing high stability, high measurement accuracy, low temperature effects and finally obtaining probe is a purpose, and before dosemeter is used metering circuit is carried out duty adjustment (determining the biasing of probe irradiation, work constant current, reference voltage).
Embodiment 1:
Select to adopt " zero-temperature coefficient electrical current " penalty method, select V
TThe irradiation offset mode.
At first measure " zero-temperature coefficient electrical current ", dosemeter work constant-current circuit (1) is regulated electric current for this reason.The switch that adds inclined to one side circuit (2) can remove, and directly the cutter with former switch terminates to instrument power source+12V end, carries out the irradiation response calibration curve of PMOS probe then.
The one, with the cobalt source (Co that demarcated
60 ΥΥ) carry out irradiation, irradiation dose can determine that demarcation can obtain the response relation of PMOS probe threshold voltage shift and radiation dose by the accurate measurement to the time.The 2nd, demarcate with irradiation bombs such as X source or electron beams, generally adopt thermoluminescence sheet (TLD) irradiation simultaneously, with calorimeter it is carried out the method for scale.Specifically, be exactly the cobalt source (Co that was demarcating
60 ΥΥ) irradiation heat is released mating plate (TLD), with calorimeter it is carried out scale, use same batch thermoluminescence sheet (TLD) and PMOS probe while irradiation under X source or electron beam source again, thereby can determine the accumulated dose of irradiation at the reading of calorimeter according to TLD, finally also can obtain the threshold voltage shift of PMOS and the response relation of total ionizing dose.
Same batch of PMOS probe of demarcating is connected in the metering circuit by respective pin, opens the dosemeter power supply, when putting this and popping one's head in radiation environment, metering circuit can record its threshold voltage shift amount.This drift value is promptly corresponding to measuring irradiation accumulated dose constantly.Dose value can obtain from the response relation curve of demarcating.
Embodiment 2:
Adopt the temperature compensation by thermistor method, select V
TThe irradiation offset mode.
Regulating resistor in the PMOS probe initial value reference voltage circuit (5) that three-port variable voltage regulator is constituted changes the thermistor component of the B value that meets the requirements into, and its step is as follows:
At first according to PMOS dosemeter applied environment temperature range (being generally-20 ℃-80 ℃), selected three and above temperature spot (containing the two ends temperature) determine initial (not irradiated) starting voltage, for example V of corresponding PMOS probe
T (20 ℃), V
T (25 ℃), V
T (80 ℃)
Output voltage (the V of next benchmark potential circuit (5)
R) and adjustable resistance (R
T) relation, V
R=f (R
t).
V among the present invention for example
R=1.25 (1+R
t/ 240)
Respectively with V
T (20 ℃), V
T (25 ℃), V
T (80 ℃)The V of substitution following formula
RIn, can calculate and above-mentioned each corresponding resistance V
-20 ℃, V
25 ℃, V
80 ℃
Then according to the resistance V of the different temperature points that obtains in the above-mentioned steps
-20 ℃, V
25 ℃, V
80 ℃Can obtain the B value of required thermistor component.
Adopt certain method to constitute the thermistor component of required B value again, and, promptly finished temperature compensation measure the PMOS probe with the regulating resistor in its alternative PMOS dosemeter reference voltage circuit.Carry out the irradiation response calibration curve of PMOS probe then.
The one, with the cobalt source (Co that demarcated
60 ΥΥ) carry out irradiation, irradiation dose can determine that demarcation can obtain the response relation of PMOS probe threshold voltage shift and irradiation dose by the accurate measurement to the time.The 2nd, demarcate with irradiation bombs such as X source or electron beams, generally adopt thermoluminescence sheet (TLD) irradiation simultaneously, with calorimeter it is carried out the method for scale.Specifically, be exactly the cobalt source (Co that was demarcating
60 ΥΥ) irradiation heat is released mating plate (TLD), with calorimeter it is carried out scale, uses same batch thermoluminescence sheet (TLD) and PMOS probe while irradiation under X source or electron beam source again, thereby can determine the accumulated dose of irradiation according to TLD at the reading of calorimeter.The final threshold voltage shift of PMOS and the response relation of total ionizing dose of also can obtaining.
To demarcate later and be connected in the metering circuit by respective pin with a batch PMOS probe, and opening the dosemeter power supply, when putting this and popping one's head in radiation environment, metering circuit can record its threshold voltage shift amount.This drift value is promptly corresponding to measuring irradiation accumulated dose constantly.Dose value can obtain from the response relation curve of demarcating.
Claims (7)
1, a kind of solid dosage instrument that can measure the ionising radiation accumulated dose is characterized in that, by the metering circuit of PMOS probe, threshold voltage shift, PMOS probe add inclined to one side circuit and power supply is formed; Constituting the temperature characteristic measuring that need carry out the PMOS probe in this dosemeter process, the temperature compensation design of circuit, the irradiation bias mode selection of probe and four kinds of irradiation response demarcation handles successively; Wherein the threshold voltage shift metering circuit has comprised the constant current loop (1) that is made of operational amplifier, isolate follower (3) by the sampling that operational amplifier constitutes, starting voltage that constitutes by operational amplifier and threshold voltage shift algorithm circuit (4) and the PMOS probe initial value reference voltage circuit (5) that constitutes by three-port variable voltage regulator; The probe add inclined to one side circuit (2) by switch with provide the operational amplifier of constant current to constitute.
2, a kind of solid dosage instrument that can measure the ionising radiation accumulated dose according to claim 1, it is characterized in that, the threshold voltage shift metering circuit is to adopt feedback self-stabilization technology, utilize the high open-loop gain of operational amplifier, constitute a constant current loop with PMOS probe, be implemented between the source-leakage of PMOS probe by 10 microamperes or 20 microamperes of constant working currents of choosing.
3, a kind of solid dosage instrument that can measure the ionising radiation accumulated dose according to claim 1 is characterized in that the another kind of temperature compensation design of threshold voltage shift algorithm circuit, and promptly the temperature-sensitive resistor assembly is to the temperature compensation act of PMOS starting voltage initial value; Regulating resistor in the PMOS probe initial value reference voltage circuit (5) that three-port variable voltage regulator is constituted changes the thermistor component of the B value that meets the requirements into, has promptly realized the temperature compensation of dosemeter is designed.
4, according to the described a kind of solid dosage instrument that can measure the ionising radiation accumulated dose of claim 1, it is characterized in that it is to decide according to level of sensitivity, response linearity, power consumption constraints, the stability requirement of dosemeter designing requirement that the irradiation bias mode of PMOS probe is selected.
5, a kind of solid dosage instrument that can measure the ionising radiation accumulated dose according to claim 1 is characterized in that the calibration technique of PMOS probe before application comprises determining of the choosing of irradiation bomb, irradiation dose and demarcate radiation dose rate and choose; Gamma-rays with 1.25MeV, 1.17MeV is the demarcation source;
Irradiation dose define two kinds: the one, with the cobalt source Co that demarcated
60Υ carries out irradiation, and irradiation dose is determined by the accurate measurement to the time; The 2nd, demarcate with irradiation bombs such as X source or electron beams, adopt thermoluminescence sheet TLD irradiation simultaneously, with calorimeter it is carried out the method for scale.
6, the using method of a kind of solid dosage instrument that can measure the ionising radiation accumulated dose according to claim 1, it is characterized in that, in the dosemeter zero-temperature coefficient electrical current determine be to obtain by temperature characteristic measuring to the PMOS probe, comprise two kinds of methods of a, b, wherein:
A, according to PMOS dosemeter applied environment temperature range-20 ℃-80 ℃, the temperature of choosing more than three contains the two ends temperature, record one group of I-V curve under each temperature, I-V measure to adopt special I-V measuring instrument or arbitraryly possesses the I of voltage scanning, current measurement and survey electric current and be at least 10
-9The instrument of A is finished; Draw the I-V curve group that records, find out the zero-temperature coefficient electrical current that the corresponding electric current of curved intersection point is this measuring sonde;
B, utilize PMOS dosemeter threshold voltage shift metering circuit or other can measure the multimeter of PMOS probe starting voltage, by increasing the work steady current gradually from 10 microamperes, under the transformation temperature environment, carry out starting voltage monitoring then, find out starting voltage and vary with temperature minimum working current and be zero-temperature coefficient electrical current.
7, the using method of a kind of solid dosage instrument that can measure the ionising radiation accumulated dose according to claim 6 is characterized in that the temperature compensation act of the thermistor component starting voltage initial value in the dosemeter is finished by following steps:
At first according to PMOS dosemeter applied environment temperature range-20 ℃-80 ℃, selected three and above temperature spot contain the two ends temperature, determine corresponding PMOS probe irradiated starting voltage V of beginning and end just
T (20 ℃), V
T (25 ℃), V
T (80 ℃)
Output voltage (the V of next benchmark potential circuit (5)
R) and adjustable resistance (R
T) relation, V
R=f (R
t);
With V
TV in the substitution following formula
RObtain the resistance R of each temperature spot correspondence
-20 ℃, R
25 ℃, R
80 ℃
And then according to the resistance R of resulting different temperature points
-20 ℃, R
25 ℃, R
80 ℃Obtain the B value of required thermistor component; According to the thermistor component of required B value,, promptly finished temperature compensation measure to the PMOS probe with the regulating resistor in its alternative PMOS dosemeter reference voltage circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98125702 CN1115570C (en) | 1998-12-07 | 1998-12-07 | Solid dosage instrument capable of measuring total ionizing radiation dosage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98125702 CN1115570C (en) | 1998-12-07 | 1998-12-07 | Solid dosage instrument capable of measuring total ionizing radiation dosage |
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| Publication Number | Publication Date |
|---|---|
| CN1256416A CN1256416A (en) | 2000-06-14 |
| CN1115570C true CN1115570C (en) | 2003-07-23 |
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ID=5229295
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 98125702 Expired - Fee Related CN1115570C (en) | 1998-12-07 | 1998-12-07 | Solid dosage instrument capable of measuring total ionizing radiation dosage |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109975855A (en) * | 2019-04-02 | 2019-07-05 | 东华理工大学 | A kind of wide-range intelligence X- gamma dose rate instrument device based on Bluetooth technology |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1296725C (en) * | 2004-11-17 | 2007-01-24 | 中国科学院新疆理化技术研究所 | Geminate transistors type PMOS radiation dose meter with difference output |
| CN103675638B (en) * | 2013-12-11 | 2016-03-23 | 北京时代民芯科技有限公司 | A kind of universal dynamic total dose test device and its implementation |
| CN105068105B (en) * | 2015-08-18 | 2017-09-26 | 浙江建安检测研究院有限公司 | Accelerator head leakage rediation method of testing |
| CN106970409B (en) * | 2017-05-17 | 2023-08-25 | 成都理工大学 | Gamma absorption dose rate instrument with soil humidity correction function and correction method |
| CN113484902A (en) * | 2021-07-24 | 2021-10-08 | 中国科学院新疆理化技术研究所 | PMOS dosimeter zero temperature coefficient measuring and inhibiting method |
-
1998
- 1998-12-07 CN CN 98125702 patent/CN1115570C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109975855A (en) * | 2019-04-02 | 2019-07-05 | 东华理工大学 | A kind of wide-range intelligence X- gamma dose rate instrument device based on Bluetooth technology |
| CN109975855B (en) * | 2019-04-02 | 2023-09-19 | 东华理工大学 | Wide-range intelligent X-gamma dose rate instrument device based on Bluetooth technology |
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| Publication number | Publication date |
|---|---|
| CN1256416A (en) | 2000-06-14 |
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