CN111545428A - Method for back coating of aluminum nitride single crystal growth seed crystal - Google Patents
Method for back coating of aluminum nitride single crystal growth seed crystal Download PDFInfo
- Publication number
- CN111545428A CN111545428A CN202010412061.4A CN202010412061A CN111545428A CN 111545428 A CN111545428 A CN 111545428A CN 202010412061 A CN202010412061 A CN 202010412061A CN 111545428 A CN111545428 A CN 111545428A
- Authority
- CN
- China
- Prior art keywords
- seed crystal
- aluminum nitride
- coating
- solution
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0254—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
Abstract
The invention relates to a method for back coating of aluminum nitride single crystal growth seed crystals, which comprises the following steps: dissolving the high-temperature resistant energy-soluble substance into a solution, then dripping the solution on the back surface of the aluminum nitride seed crystal, uniformly distributing the solution on the back surface of the aluminum nitride seed crystal by using glue homogenizing equipment, and drying to finish coating the back of the aluminum nitride seed crystal. Finally obtaining the film coating which is high temperature resistant and prevents back sublimation on the back of the aluminum nitride seed crystal through the steps. The method has the advantages of simple process, easy operation and low cost, and the coating on the back of the seed crystal is tightly combined with the seed crystal, thereby solving the back sublimation defect caused by the problem of glue layer air holes generated among the seed crystal, the glue layer and the seed crystal support in the traditional seed crystal bonding process and improving the crystallization quality of the aluminum nitride.
Description
Technical Field
The invention relates to a seed crystal back coating method suitable for aluminum nitride single crystal growth, which is used for preventing the seed crystal from sublimating from the back in the aspect of aluminum nitride crystal growth and belongs to the field of artificial crystal growth.
Background
The aluminum nitride crystal (AlN) belongs to the third generation wide bandgap semiconductor material, and has the advantages of wide bandgap, high breakdown electric field, high thermal conductivity, high electron saturation rate, strong radiation resistance and the like. AlN crystals have more excellent properties than other semiconductor materials: (1) the band gap is 6.2eV, which is an important substrate material for deep ultraviolet devices, (2) the material has high thermal conductivity, high melting point, high resistivity, strong breakdown field and small dielectric coefficient, and is an excellent electronic material for high-temperature, high-frequency and high-power devices; (3) AlN has very good piezoelectric and high-speed propagation performance of surface acoustic waves, and is an excellent piezoelectric material for surface acoustic wave devices; therefore, the AlN crystal material has wide application prospect.
Physical Vapor Transport (PVT) is currently the commonly used method for growing AlN bulk crystals, for example: chinese patent document CN106637411A discloses an aluminum nitride single crystal growth method, wherein the temperature curve and the pressure curve during crystal growth are simple and controllable; the surface of the aluminum nitride sintered body is subjected to crystal growth, and the inside of the aluminum nitride single crystal obtained by growth is almost free of defects; by adopting the tungsten material to prepare the crucible, the introduction of impurities is very little; aluminum nitride single crystals with the maximum dimension of centimeter level can be obtained; the crystal growth cost is lower. The method of PVT growth of AlN bulk crystals requires pulling on a seed crystal to which it is bonded. The back of the aluminum nitride seed crystal can generate air holes in the bonding process, and due to the common action of the air holes in the back of the seed crystal and the temperature gradient, the back sublimation phenomenon can occur in the high-temperature growth process, so that a large number of defects occur in the crystal. Therefore, it is common in the art to plate a protective film on the backside of the aluminum nitride seed to prevent backside sublimation. Chinese patent document CN108642561A discloses a method for protecting the surface of a seed crystal in the growth of an aluminum nitride single crystal. Plating an AlN film with a certain thickness on the surface of the SiC seed crystal; setting the pressure to be 900-; and after constant temperature and pressure are carried out for a certain time, rapidly descending the induction coil to an AlN powder source area, simultaneously reducing the air pressure of the furnace body to 200mbar, and carrying out AlN crystal growth under the conditions of constant temperature and constant pressure. By using the method, the AlN film layer can prevent the volatilization of the seed crystal at the bottom layer from being damaged in the temperature rise stage, when the temperature rises to the growth temperature stage, the temperature gradient of the seed crystal and the temperature gradient of the powder source region are reversed by moving the induction coil, so that the AlN film coating layer gradually volatilizes, and normal AlN single crystal growth is realized by reducing the pressure. This patent document discloses plating an aluminum nitride film on the front surface of a silicon carbide seed crystal to prevent corrosion of the silicon carbide seed crystal by the aluminum nitride atmosphere or the aluminum atmosphere. The method does not relate to the prevention of the back glue layer from generating air holes in the process of bonding the aluminum nitride seed crystal, and the back temperature gradient caused by the air holes causes the back sublimation of the aluminum nitride seed crystal to form defects.
Meanwhile, the traditional coating mode has high cost, low efficiency and complex operation, and glue layer air holes are formed among the seed crystals, the glue layer and the seed crystal support, so that the seed crystal is sublimated at the back.
Disclosure of Invention
Aiming at the defects of the prior art, in particular to the defects generated in the crystal growth process due to the easily generated glue layer air holes among the seed crystals, the glue layer and the seed crystal support. Thereby increasing the plating process on the back of the seed crystal before the seed crystal bonding process. The invention provides a method for coating the back of an aluminum nitride seed crystal, thereby solving the back sublimation defect generated by the method and obviously improving the crystallization quality of the aluminum nitride.
The technical scheme of the invention is as follows:
a method for back coating of a seed crystal for aluminum nitride single crystal growth comprises the following steps:
dissolving the high-temperature resistant energy-soluble substance into a solution, then dripping the solution on the back surface of the aluminum nitride seed crystal, uniformly distributing the solution on the back surface of the aluminum nitride seed crystal by using glue homogenizing equipment, and drying to finish coating the back of the aluminum nitride seed crystal.
According to the invention, preferably, the high-temperature resistant soluble substance is high-temperature resistant alkali metal aluminate, high-temperature resistant metal and compound thereof, organic compound and other high-temperature resistant inorganic substances;
preferably, the alkali metal aluminate is one or a mixture of more than one of sodium aluminate, potassium aluminate, magnesium aluminate, sodium metaaluminate, potassium metaaluminate, magnesium metaaluminate, sodium aluminosilicate, potassium aluminosilicate and magnesium aluminosilicate in any proportion;
preferably, the high-temperature resistant metal and the compound thereof are tungsten, molybdenum, tantalum, tungsten carbide, molybdenum carbide, tantalum carbide and the like;
preferably, the organic compound is glucose, epoxy resin and the like;
preferably, the high-temperature resistant inorganic substance is graphite glue or silica sol.
According to the present invention, it is preferable that the solvent dissolving the high temperature resistant soluble substance is:
the solvent for dissolving the alkali metal aluminate is water;
the solvent for dissolving tungsten, molybdenum and tantalum metal is strong acid or hydrogen peroxide, and hydrochloric acid, sulfuric acid, nitric acid and hydrogen peroxide are further preferred;
the solvent for dissolving the high-temperature resistant metal compound is alkali liquor, and sodium hydroxide and potassium hydroxide are further preferred;
the solvent for dissolving the organic compound is water and/or an organic solvent, and ethanol, acetone, ethyl acetate, or xylene is more preferable.
According to the present invention, it is preferred that the concentration of the solution is a saturated solution or any concentration below the saturated solution. Further preferably, the concentration of the solution is controlled to be a dilute solution.
According to the invention, the aluminum nitride seed crystal is preferably regular in shape, more preferably cylindrical, and the diameter of the aluminum nitride seed crystal is 2mm-400 mm.
According to the invention, preferably, the dropping coating is carried out by adopting a glue homogenizing machine, the aluminum nitride seed crystal is placed at the center of the glue homogenizing machine, the prepared solution is dropped at the center of the aluminum nitride seed crystal, and the glue homogenizing machine is started to uniformly cover the back of the seed crystal with the prepared solution;
further preferably, the rotation speed of the spin coater is 10rpm-10000 rpm.
According to the present invention, it is preferable that the aluminum nitride seed back plating film has a thickness of 1 μm to 200. mu.m.
According to the present invention, it is preferable that the drying temperature is 200 ℃ to 800 ℃.
According to the invention, the drying time is preferably 0.5h to 15 h.
The thickness of the coating film in the invention is related to the solubility of the solution, the thickness of a single coating film of a dilute solution is about 1 mu m generally, the thickness of a single coating film of a saturated solution is about 3 mu m, and if a thick film is required, the coating film can be repeatedly carried out.
The invention has not been described in detail, but is in accordance with the state of the art.
The invention has the following technical characteristics and beneficial effects:
1. the invention adopts the solution which is formed by dissolving high-temperature resistant energy-soluble substances as a coating solution, the high-temperature resistant energy-soluble substances are dissolved into the solution, the particles are dissolved into a molecular-level solution, the solution is uniformly attached to the back of the seed crystal by a glue homogenizing machine, and then the back of the seed crystal is plated into a film.
2. The invention adopts a glue homogenizing machine to carry out coating, the rotating speed is 10rpm-10000rpm, and the thickness of the coating is 1 μm-200 μm. The spin coater accelerates to a set rotating speed at a certain acceleration, the acceleration is reduced, the uniformity of the coating is better, and the rotating speed is slower, so that the coating thickness is relatively thicker.
3. The invention has simple process, easy operation and low cost, and the coating on the back of the seed crystal is tightly combined with the seed crystal, thereby solving the back sublimation defect caused by the air holes of the glue layer generated among the seed crystal, the glue layer and the seed crystal support in the traditional seed crystal bonding process and improving the crystallization quality of the aluminum nitride.
Drawings
FIG. 1 is a schematic side view of an aluminum nitride seed coating according to the present invention.
FIG. 2 is a photograph showing voids generated in the aluminum nitride seed crystal directly bonded to a substrate without plating in test example 1 of the present invention.
FIG. 3 is a photograph showing that no pinholes were formed in aluminum nitride seed crystal coating in test example 1 of the present invention.
Detailed Description
The present invention is further illustrated by, but is not limited to, the following examples.
The spin coater used in the examples was conventional equipment, a commercial product.
Example 1
A method for back coating of a seed crystal for aluminum nitride single crystal growth comprises the following steps:
(1) dissolving sodium aluminate into water to prepare dilute sodium aluminate aqueous solution;
(2) placing a circular aluminum nitride seed crystal with the diameter of 25.4mm at the center of a spin coater;
(3) dripping the prepared sodium aluminate aqueous solution at the center of the aluminum nitride seed crystal;
(4) starting a spin coater, wherein the rotation speed of the spin coater is 2000rpm, so that the prepared sodium aluminate aqueous solution uniformly covers the back of the seed crystal;
(5) and (3) placing the seed crystal in a drying furnace to be dried for 2 hours at the drying temperature of 800 ℃, and obtaining the seed crystal with the coating thickness of 1um and good coating uniformity.
Example 2
A method for back coating of a seed crystal for aluminum nitride single crystal growth comprises the following steps:
(1) dissolving sodium aluminate into water to prepare a saturated aqueous solution of sodium aluminate;
(2) placing a circular aluminum nitride seed crystal with the diameter of 25.4mm at the center of a spin coater;
(3) dripping the prepared saturated aqueous solution of sodium aluminate at the center of the aluminum nitride seed crystal;
(4) starting a spin coater, wherein the rotation speed of the spin coater is 2000rpm, so that the prepared solution uniformly covers the back of the seed crystal
(5) And (3) placing the seed crystal in a drying furnace for drying for 2h, wherein the drying temperature is 800 ℃, and the thickness of the coating film is 3 microns.
Examples 3 to 10
As described in example 1, except that:
in the step (1), potassium aluminate, magnesium aluminate, sodium metaaluminate, potassium metaaluminate, magnesium metaaluminate, sodium aluminosilicate, potassium aluminosilicate or magnesium aluminosilicate are respectively dissolved in water to prepare dilute solution.
Example 11
A method for back coating of a seed crystal for aluminum nitride single crystal growth comprises the following steps:
(1) dissolving metal tungsten in hydrochloric acid to prepare a tungsten chloride dilute solution;
(2) placing a circular aluminum nitride seed crystal with the diameter of 25.4mm at the center of a spin coater;
(3) dripping the prepared tungsten chloride dilute solution at the center of the aluminum nitride seed crystal;
(4) starting a spin coater, wherein the rotation speed of the spin coater is 2000rpm, so that the prepared solution uniformly covers the back of the seed crystal
(5) And (3) placing the seed crystal in a drying furnace for drying for 2h at the drying temperature of 400 ℃ to obtain the coating thickness of 1 mu m.
Examples 12 to 13
As described in example 11, except that:
in the step (1), metal molybdenum and metal tantalum are respectively dissolved in hydrochloric acid to prepare dilute solution.
Examples 14 to 16
As described in example 11, except that:
in the step (1), tungsten carbide, molybdenum carbide and tantalum carbide are respectively dissolved in sodium hydroxide to prepare dilute solution.
Example 17
A method for back coating of a seed crystal for aluminum nitride single crystal growth comprises the following steps:
(1) dissolving glucose in water to prepare a dilute glucose solution;
(2) placing a circular aluminum nitride seed crystal with the diameter of 25.4mm at the center of a spin coater;
(3) dropping the prepared glucose dilute solution at the center of the aluminum nitride seed crystal;
(4) starting a spin coater, wherein the rotation speed of the spin coater is 2000rpm, so that the prepared solution uniformly covers the back of the seed crystal
(5) And (3) placing the seed crystal in a drying furnace for drying for 2h at the drying temperature of 200 ℃ to obtain the coating thickness of 1 mu m.
Example 18
A method for back coating of a seed crystal for aluminum nitride single crystal growth comprises the following steps:
(1) preparing a silica sol solution;
(2) placing a circular aluminum nitride seed crystal with the diameter of 25.4mm at the center of a spin coater;
(3) dropping the prepared silica sol solution at the center of the aluminum nitride seed crystal;
(4) and starting a spin coater, uniformly covering the prepared solution on the back (5) of the seed crystal at the rotating speed of 2000rpm, and drying the seed crystal in a drying furnace for 2 hours at the drying temperature of 600 ℃ to obtain the coating with the thickness of 1 mu m.
Example 19
A method for back coating of a seed crystal for aluminum nitride single crystal growth comprises the following steps:
(1) dissolving epoxy resin in ethyl acetate to prepare epoxy resin dilute solution;
(2) placing a circular aluminum nitride seed crystal with the diameter of 25.4mm at the center of a spin coater;
(3) dripping the prepared epoxy resin dilute solution at the center of the aluminum nitride seed crystal;
(4) starting a spin coater, wherein the rotation speed of the spin coater is 2000rpm, so that the prepared solution uniformly covers the back of the seed crystal
(5) And (3) placing the seed crystal in a drying furnace to be dried for 2h, wherein the drying temperature is 300 ℃, and the thickness of the coating film is 1 mu m.
Example 20
A method for back coating of a seed crystal for aluminum nitride single crystal growth comprises the following steps:
(1) dissolving sodium aluminate into water to prepare a saturated aqueous solution of sodium aluminate;
(2) placing a circular aluminum nitride seed crystal with the diameter of 25.4mm at the center of a spin coater;
(3) dripping the prepared saturated aqueous solution of sodium aluminate at the center of the aluminum nitride seed crystal;
(4) starting a spin coater, wherein the rotation speed of the spin coater is 2000rpm, so that the prepared solution uniformly covers the back of the seed crystal
(5) Placing the seed crystal in a drying furnace to be dried for 2 hours, wherein the drying temperature is 800 ℃;
(6) the plating was repeated 10 times to obtain a film thickness of 40 μm.
Example 21
A method for back coating of a seed crystal for aluminum nitride single crystal growth comprises the following steps:
(1) dissolving sodium aluminate into water to prepare a dilute aqueous solution of sodium aluminate;
(2) placing a circular aluminum nitride seed crystal with the diameter of 50.8mm at the center of a spin coater;
(3) dripping the prepared dilute aqueous solution of sodium aluminate at the center of the aluminum nitride seed crystal;
(4) starting a spin coater, wherein the rotation speed of the spin coater is 2000rpm, so that the prepared solution uniformly covers the back of the seed crystal;
(5) placing the seed crystal in a drying furnace to be dried for 2 hours, wherein the drying temperature is 800 ℃; the thickness of the plated film is 1 mu m, and the uniformity is good.
Example 22
A method for back coating of a seed crystal for aluminum nitride single crystal growth comprises the following steps:
(1) dissolving sodium aluminate into water to prepare a dilute aqueous solution of sodium aluminate;
(2) placing a circular aluminum nitride seed crystal with the diameter of 50.8mm at the center of a spin coater;
(3) dripping the prepared dilute aqueous solution of sodium aluminate at the center of the aluminum nitride seed crystal;
(4) starting a spin coater, wherein the rotation speed of the spin coater is 300rpm, so that the prepared solution uniformly covers the back of the seed crystal;
(5) placing the seed crystal in a drying furnace to be dried for 2 hours, wherein the drying temperature is 800 ℃; the thickness of the plated film is 1 mu m, and the uniformity is good.
Example 23
A method for back coating of a seed crystal for aluminum nitride single crystal growth comprises the following steps:
(1) dissolving sodium aluminate into water to prepare a dilute aqueous solution of sodium aluminate;
(2) placing a circular aluminum nitride seed crystal with the diameter of 50.8mm at the center of a spin coater;
(3) dripping the prepared dilute aqueous solution of sodium aluminate at the center of the aluminum nitride seed crystal;
(4) starting a spin coater, wherein the rotation speed of the spin coater is 2000rpm, so that the prepared solution uniformly covers the back of the seed crystal;
(5) placing the seed crystal in a drying furnace to be dried for 10 hours, wherein the drying temperature is 800 ℃; the thickness of the plated film is 1 mu m, and the uniformity is good.
Comparative example 1
The aluminum nitride seed crystal is not coated.
Test example 1
Aluminum nitride seed crystals of example 1 and comparative example 1 were bonded according to the prior art to grow an aluminum nitride single crystal. During the growth process, the aluminum nitride seed crystal in the comparative example 1 is directly bonded with the substrate in a dragging way, and obviously air holes exist, as shown in figure 2. The aluminum nitride seed crystal after coating in example 1 was dragged along with the substrate, and no air hole was formed between the seed crystal and the film, which did not cause sublimation, as shown in FIG. 3.
Claims (10)
1. A method for back coating of a seed crystal for aluminum nitride single crystal growth comprises the following steps:
dissolving high temperature resistant soluble substances into a solution, dripping the solution on the back surface of the aluminum nitride seed crystal, uniformly distributing the solution on the back surface of the aluminum nitride seed crystal by using a glue homogenizing device, and drying to obtain the aluminum nitride seed crystal back coating film.
2. A method as claimed in claim 1, wherein the refractory soluble substance is refractory alkali metal aluminate, refractory metal, refractory compound, organic compound or refractory inorganic substance.
3. A method for seed crystal backside coating for aluminum nitride single crystal growth as recited in claim 2 wherein the alkali metal aluminate is one or more of sodium aluminate, potassium aluminate, magnesium aluminate, sodium metaaluminate, potassium metaaluminate, magnesium metaaluminate, sodium aluminosilicate, potassium aluminosilicate and magnesium aluminosilicate in any proportion.
4. A method as claimed in claim 2, wherein the high temperature resistant metal is tungsten, molybdenum or tantalum.
5. A method as claimed in claim 2, wherein the refractory metal compound is tungsten carbide, molybdenum carbide or tantalum carbide.
6. A method for back coating an aluminum nitride single crystal growth seed according to claim 2, wherein said organic compound is glucose or epoxy resin;
preferably, the high-temperature resistant inorganic substance is graphite glue or silica sol.
7. A method for back coating an aluminum nitride single crystal growth seed crystal as claimed in claim 2, wherein the solvent for dissolving the high temperature resistant energy soluble substance is:
the solvent for dissolving the alkali metal aluminate is water;
the solvent of the high-temperature resistant metal is strong acid or hydrogen peroxide, preferably hydrochloric acid, sulfuric acid, nitric acid or hydrogen peroxide;
the solvent for dissolving the high-temperature resistant metal compound is alkali liquor, preferably sodium hydroxide and potassium hydroxide;
the solvent for dissolving organic compound is water and/or organic solvent, preferably ethanol, acetone, ethyl acetate, and xylene.
8. The method for plating the back of the aluminum nitride single crystal growth seed crystal according to claim 1, wherein the coating is performed by a spin coater, the aluminum nitride seed crystal is placed at the center of the spin coater, the prepared solution is dropped at the center of the aluminum nitride seed crystal, and the spin coater is started to uniformly cover the prepared solution on the back of the seed crystal;
preferably, the rotation speed of the spin coater is 10rpm-10000 rpm.
9. The method for back-coating an aluminum nitride single crystal growth seed according to claim 1, wherein the aluminum nitride seed back-coating film has a thickness of 1 μm to 200 μm.
10. The method for back coating of an aluminum nitride single crystal growth seed crystal as claimed in claim 1, wherein the baking temperature is 200 ℃ -800 ℃;
preferably, the drying time is 0.5h-15 h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010412061.4A CN111545428B (en) | 2020-05-15 | 2020-05-15 | Method for back coating of aluminum nitride single crystal growth seed crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010412061.4A CN111545428B (en) | 2020-05-15 | 2020-05-15 | Method for back coating of aluminum nitride single crystal growth seed crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111545428A true CN111545428A (en) | 2020-08-18 |
| CN111545428B CN111545428B (en) | 2021-07-20 |
Family
ID=72004794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010412061.4A Active CN111545428B (en) | 2020-05-15 | 2020-05-15 | Method for back coating of aluminum nitride single crystal growth seed crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111545428B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113072906A (en) * | 2021-03-31 | 2021-07-06 | 哈尔滨化兴软控科技有限公司 | Aluminum nitride seed crystal adhesive and preparation method and use method thereof |
| CN113546821A (en) * | 2021-07-22 | 2021-10-26 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Coating method of silicon carbide seed crystal |
| CN113957536A (en) * | 2021-09-23 | 2022-01-21 | 奥趋光电技术(杭州)有限公司 | Composite structure AlN seed crystal for PVT and preparation and application thereof |
| CN114016130A (en) * | 2021-11-10 | 2022-02-08 | 哈尔滨工业大学 | Method for welding single crystal diamond seed crystal and sample holder |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09268096A (en) * | 1996-03-29 | 1997-10-14 | Toyota Central Res & Dev Lab Inc | Production of single crystal and seed crystal |
| CN101985773A (en) * | 2009-11-05 | 2011-03-16 | 新疆天科合达蓝光半导体有限公司 | Seed crystal treatment method and silicon carbide mono-crystal growing method |
| CN102414349A (en) * | 2009-11-30 | 2012-04-11 | 住友电气工业株式会社 | Method for producing monocrystal |
| CN109487335A (en) * | 2019-01-08 | 2019-03-19 | 山东大学 | A kind of seed crystal adhering method for aluminum-nitride single crystal growth |
-
2020
- 2020-05-15 CN CN202010412061.4A patent/CN111545428B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09268096A (en) * | 1996-03-29 | 1997-10-14 | Toyota Central Res & Dev Lab Inc | Production of single crystal and seed crystal |
| CN101985773A (en) * | 2009-11-05 | 2011-03-16 | 新疆天科合达蓝光半导体有限公司 | Seed crystal treatment method and silicon carbide mono-crystal growing method |
| CN102414349A (en) * | 2009-11-30 | 2012-04-11 | 住友电气工业株式会社 | Method for producing monocrystal |
| CN109487335A (en) * | 2019-01-08 | 2019-03-19 | 山东大学 | A kind of seed crystal adhering method for aluminum-nitride single crystal growth |
Non-Patent Citations (3)
| Title |
|---|
| 华一新: "《有色冶金概论》", 31 May 2014, 冶金工业出版社 * |
| 田庆华等: "《金属元素大探秘》", 31 March 2018, 冶金工业出版社 * |
| 聂运生: "《我的第一本化学故事书》", 30 November 2016, 上海科学普及出版社 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113072906A (en) * | 2021-03-31 | 2021-07-06 | 哈尔滨化兴软控科技有限公司 | Aluminum nitride seed crystal adhesive and preparation method and use method thereof |
| CN113546821A (en) * | 2021-07-22 | 2021-10-26 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Coating method of silicon carbide seed crystal |
| CN113957536A (en) * | 2021-09-23 | 2022-01-21 | 奥趋光电技术(杭州)有限公司 | Composite structure AlN seed crystal for PVT and preparation and application thereof |
| CN114016130A (en) * | 2021-11-10 | 2022-02-08 | 哈尔滨工业大学 | Method for welding single crystal diamond seed crystal and sample holder |
| CN114016130B (en) * | 2021-11-10 | 2022-09-13 | 哈尔滨工业大学 | Method for welding single crystal diamond seed crystal and sample holder |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111545428B (en) | 2021-07-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111545428B (en) | Method for back coating of aluminum nitride single crystal growth seed crystal | |
| CN101985773B (en) | Seed crystal treatment method and silicon carbide mono-crystal growing method | |
| JP6537590B2 (en) | Method of manufacturing silicon carbide single crystal ingot | |
| CN103952682A (en) | Method for growing single-layer molybdenum disulfide by chemical vapor deposition | |
| CN113122918B (en) | TaC coating crucible for third-generation semiconductor crystal growth and preparation method | |
| CN112831840B (en) | Single crystal growing device | |
| CN110592673A (en) | High-quality large-size silicon carbide crystal growth method | |
| JP2020066571A (en) | Method for manufacturing seed crystal including protective film, method for manufacturing ingot obtained by applying the same, seed crystal including protective film and method for bonding seed crystal | |
| CN115627522B (en) | Method for improving crystal growth quality | |
| KR20120013300A (en) | Quartz glass crucible for pulling single-crystal silicon and process for producing single-crystal silicon | |
| CN110408987A (en) | Crystal growing furnace | |
| JP2018140884A (en) | Single crystal production apparatus, and single crystal production method | |
| FR2803854A1 (en) | Improving optical separation of needle-like phosphor layers formed on substrate comprises controlling vaporization so that phosphor layer is deposited on substrate in reduced thickness | |
| CN113502540B (en) | Sacrificial silicon carbide seed crystal protective film | |
| TW202026470A (en) | Semi-insulating silicon carbide single crystal doped with small amount of vanadium, substrate prepared therefrom, and preparation method therefor | |
| CN104018124B (en) | Process for preparing semiconductor material SiC film | |
| JP2003226600A (en) | Seed crystal for growing silicon carbide single crystal, silicon carbide single crystal ingot, and methods of producing them | |
| CN113668065A (en) | High-temperature bonding method for aluminum nitride seed crystals | |
| CN209890759U (en) | Seed crystal support | |
| JP2009184897A (en) | Method for manufacturing silicon carbide single crystal | |
| CN114292129B (en) | Method for depositing silicon carbide coating on surface of graphite piece by using solution method | |
| JP2005132703A (en) | Method for manufacturing silicon carbide substrate, and silicon carbide substrate | |
| JP2001506572A (en) | Method of forming diamond film by vapor phase synthesis | |
| JP3680531B2 (en) | Seed crystal fixing agent and method for producing single crystal using the same | |
| KR20150095344A (en) | Method of Crystal Growth of SiC Using Liquid Phase Techniques |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |