CN1115414A - 测量曝光装置分辨率用的光掩模 - Google Patents

测量曝光装置分辨率用的光掩模 Download PDF

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CN1115414A
CN1115414A CN95104509A CN95104509A CN1115414A CN 1115414 A CN1115414 A CN 1115414A CN 95104509 A CN95104509 A CN 95104509A CN 95104509 A CN95104509 A CN 95104509A CN 1115414 A CN1115414 A CN 1115414A
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photomask
resolution
exposure equipment
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CN1086811C (zh
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黄�俊
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SK Hynix Inc
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Hyundai Electronics Industries Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

一种用于测量曝光装置分辨率的光掩模，所述光掩模包括两个被覆图形，每一个图形有许多相同副图形并且对称于其中心轴线，其中心轴线，两个图形的配置方式是，相面对的相应副图形间的间隙可顺序增宽或变窄，或者包括许多由一些连接膜把它们相互连接起来的同心图形，连接膜是连接在同心图形间的空间。

Description

测量曝光装置分辨 率用的光掩模
本发明总的说来是涉及测量曝光装置分辨率所用光掩模，尤其是能使测量曝光装置分辨率更简单、精确的光掩模。
通常，照相平版印刷术，是制造半导体装置线路的最重要方法之一，借助这一技术在一块晶片上可同时形成许多相同的线路。事实上，半导体装置的生产率确实是依赖于照相平版印刷术。因此，要求光掩蔽工艺过程必须绝对地精确。特别是，为保证光掩蔽工艺的精确性，在照相平版印刷术的每一过程中所使用的光掩模必须精确地对准。测量曝光装置分辨率用的一种光掩模通常常用于测量例如在照相过程和蚀刻过程中使曝光处在最佳聚焦状态下所形成的图形的分辨率以及曝光装置本身的分辨率。
为了更好地理解本发明的背景，下面将参考附图对测量曝光装置分辨率的一种常规的光掩模作一说明。
参考图1，该图所示是由一些划线分割开的晶片上的一部份。正如图上所示，晶片上的有效区是由划线2界定的，为了测量曝光装置分辨率，在该界区内形成一个图形3。
参考图2，该图详细地显示出用于测量曝光装置分辨率的图形，这一分辨率测量图形包括许多组，每一组中有一些由一规整的间隙分隔开具有相等线宽的光敏层条纹4。一组光敏层条纹间的间隙值是通过凹刻或凸刻在图形边上的数字加以识别，这一数值与这一组条纹的尺寸对应。曝光装置的分辨率可以通过最细线宽的清晰光敏层条纹4加以测定。
由于测量曝光装置分辨率的这种条纹是由肉眼通过显微镜检测的，所以每次测定时总会发生一个测量误差，这就使得找出曝光装置的最佳状态极为困难。因此，要利用测量曝光装置分辨率的常规的条纹来准确地设定曝光装置分辨率的最低极限事实上是不可能的。
此外，对于高集成度的半导体装置，测量曝光装置分辨率用的常规条纹就需要更细小，而照相平版印刷或蚀刻工艺会造成细小条纹剥落，结果在半导体装置中产生缺陷。
因此，本发明的一个目的是要克服已有技术所遇到的问题并提供使测量曝光装置分辨率更为准确和简单的一种光掩模。
本发明的另一个目的是提供一种可防止分辨率测量光敏层条纹剥落的测量曝光装置分辨率用的光掩模。
根据本发明的一个方面，提供了一种用于测量曝光装置分辨率的光掩模，该光掩模包括两个被覆图形(Superimposing Pattern)，每一个图形有多个对称于中心轴线的相同的副条纹，两个图形是对准配置的，使它们的相对的对应的副条纹之间的间隙可顺序变宽或变窄。
根据本发明的另一个方面，提供了一种用于测量曝光装置分辨率的光掩模，该光掩模包括许多同心的图形，同心图形由一些连接膜互相连接，所述连接膜形成于同心图形间的空间。
本发明以上所述目的和其它优点，通过参考附图对本发明的优选实施方案的详细说明就将显得更为清楚。
图1是一片晶片的俯视图，示出按照划线形成的用于测量曝光装置分辨率的一个图形；
图2是图1图形的细部图；
图3示出的是本发明的一个实施方案的用于测量曝光装置分辨率的图形的俯视图；
图4示出的是应用图3的分辨率测量图形所形成的光敏层图形的俯视图；
图5示出的是本发明的另一个实施方案的用于测量曝光装置分辨率的图形的俯视图。
本发明优选实施方案的应用结合参考附图可得到充分地理解，图上对应的相同部分采用相同的参考数字。
首先参见图3，图上有在光掩模上做成的两个铬膜图形，它们彼此对应(Superimposed)，每一个铬膜图形有许多朝向中央的一个台阶的上升或下降的台阶，并且对称于其中心垂直轴。两个被覆铬膜图形5是用来在一片晶片上形成一个光敏层图形，这一光敏层图形直接应用于测量曝光装置的分辨率。正如图3上所示，本发明的光掩模包括两个被覆的对称的铬膜图形，其构成的形式使得它们彼此之间所构成的间隙可顺续地变宽或变窄。
根据本发明的一种实施方案，两个对向台阶之间的间隙要比与其相邻的内侧的对向台阶的间隙大0.1微米，台阶的宽度都是恒定的。例如，一个铬膜图形的中央台阶同其对面另一个铬膜图形的中央台阶离开0.3微米，下一对离开0.4微米，第三对离开0.5微米，其余以此类推，而全部台阶的宽度都是相同的，例如在5至15微米范围内。
参考图4，图中示出利用图3的光掩模在一块半导体基片的划线区中形成光敏层图形6。光敏层图形形成时，在超出曝光装置分辨率极限以外的区域往往会出现残余的光敏层，例如，如果利用图3所示的光掩模形成图4所示的光敏层图形6，残余的光敏层7还留在中央台阶和其相邻台阶上，则分辨率就可认定是0.5微米，因为光敏层图形6未在0.3和0.4微米区内准确地限定。从这一说明实例就可明白，按照本发明的第一种实施方案，曝光装置的分辨率可很准确和迅速地测定。
转向图5，这是按照本发明的第二种实施方案的用于测量曝光装置的分辨率的一种光掩模。如图所示，这一种光掩模有许多彼此同心并由一些正方形连接膜8′互相连结起来的铬膜图形8。在该光掩模中，两个或两个以上的相邻同心铬片图形的线宽是相等的。例如，最里面的铬膜图形和其相邻的图形两者都是0.3微米宽，第三个和第四个图形是0.6微米宽，第5个和第6个是0.8微米宽。目前，测量曝光装置分辨率用的光掩模优先采用20至50微米量值范围。依照本发明，光掩模的铬膜图形可以是正方形、圆形、“”形或“”形。
连接膜8′的作用是，当测量曝光装置分辨率用的光掩模用于在一半导体基片上形成分辨率测量光敏层图形时，也形成它们相应的图形，预防有关的光敏图形的剥落。也就是说，通过连接膜8′同测量曝光装置分辨率用的光掩模的铬膜图形的相互连接，就可预防在晶片上形成的精细光敏层图形的剥落。
正如上文所述，本发明表明，在制造半导体装置过程中有既能提高生产率又能达到取得准确的线路的特征效果。
对于熟悉常规技术的人员而言，在阅读了前述的披露之后，对在此所披露的本发明的实施方案，优点和其它的特征就将更为明白了。在这一方面，在本发明的特殊实施方案已经相当明细地描述了的同时，在不离开本发明在说明书中和权利要求书中所说明的范围和精神下，这些实施方案可以有改变和改动。

Claims (6)

1、一种用于测量曝光装置分辨率的光掩模，包括有两个被覆图形，每一个图形有许多对相同副图形并且对放于其中心轴线，两个图形配置对准的方式是，相面对的相应副图形间的间隙可顺续地增宽或变窄。
2、根据权利要求1的光掩模，其特征在于其中的副图形在宽度上是相同的。
3、根据权利要求2的光掩模，其特征在于该宽度的范围是5至15微米。
4、一种用于测量曝光装置分辨率的光掩模，包括许多由一些连接膜把它们相互连接起来的同心图形，连接膜是连在同心图形间的空间。
5、根据权利要求4的光掩模，其特征在于该同心图形的形状为正方形、圆形、“”形或“”形。
6、根据权利要求4的光掩模，其特征在于该同心图形的每两个相邻图形的线宽是同一量值。
CN95104509A 1994-04-01 1995-04-01 测量曝光装置分辨率用的光掩模 Expired - Fee Related CN1086811C (zh)

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KR1019940006952A KR0144083B1 (ko) 1994-04-01 1994-04-01 노광기 해상도 측정용 포토마스크
KR19946952 1994-04-01
KR1994-6952 1994-04-01
KR1019940007284A KR0119920B1 (ko) 1994-04-07 1994-04-07 노광기 해상도 측정용 포토마스크
KR1994-7284 1994-04-07
KR19947284 1994-04-07

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CN112198754A (zh) * 2020-08-24 2021-01-08 株洲中车时代半导体有限公司 光刻掩模板、对准标记及其制备方法以及湿法刻蚀方法

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JP2723081B2 (ja) * 1995-05-15 1998-03-09 日本電気株式会社 スキャン露光方式における照度むら検出方法
JP3269343B2 (ja) * 1995-07-26 2002-03-25 キヤノン株式会社 ベストフォーカス決定方法及びそれを用いた露光条件決定方法
JPH09166416A (ja) * 1995-12-13 1997-06-24 Mitsubishi Electric Corp レチクルパターンの相対的位置ずれ量計測方法およびレチクルパターンの相対的位置ずれ量計測装置
CN102683253B (zh) * 2012-05-04 2015-07-22 上海华力微电子有限公司 一种提高图形线宽量测精度的对准方法

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CN112198754A (zh) * 2020-08-24 2021-01-08 株洲中车时代半导体有限公司 光刻掩模板、对准标记及其制备方法以及湿法刻蚀方法

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