CN111540806B - Comprehensive screen integrated pulse sensor and preparation method thereof - Google Patents
Comprehensive screen integrated pulse sensor and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a comprehensive screen integrated pulse sensor, which comprises a display panel arranged on an electronic product, and a sensor layer positioned above or below the display panel, wherein the sensor layer comprises a silicon-germanium nanowire radial junction, a quantum dot layer and a transparent bottom electrode; the display panel is provided with a normal display area and a pulse sensor array area; the silicon-germanium nanowire radial junctions are distributed on the transparent bottom electrode above the quantum dot layer in an array mode, and the transparent bottom electrode is connected with a phase-locked amplifier of an electronic product.
Description
Technical Field
The invention relates to a sensor for measuring pulse signals, which is suitable for the comprehensive screen integration of a mobile phone, in particular to a sensor for changing visible light of the mobile phone into near infrared light to be projected on skin and collecting near infrared reflected light to collect pulse information by using a silicon germanium nanowire radial junction film and near infrared quantum dots.
Background
Nowadays, with the development of the mobile phone manufacturing industry, a full-screen mobile phone has become a mainstream trend, and all manufacturers pursue a high screen ratio close to 100%, and various technologies under the screen are developed vigorously. The pulse sensors commonly used include piezoelectric, piezoresistive, and photoelectric sensors. Piezoelectric, piezoresistive and flexible wearable devices are combined more, but are difficult to integrate into a mobile phone screen. Traditional photoelectric pulse sensor needs infrared diode transmission infrared ray, gathers the transmitted light through the organism, needs extra infrared light source and collection sensor, also can't be with the fine combination of plane cell-phone screen.
The silicon germanium nanowire radial junction technology is a technology for preparing a thin film photoelectric device, is low in cost, can be used for preparing a micro thin film device, and has high absorption efficiency in a near infrared band. The near infrared of 650-1450 nm is also a light-transmitting window of the organism, which is beneficial to the light to penetrate the skin tissue. Modern quantum dot technology has a great development in near-infrared biological application, and can convert visible light into near-infrared light without an additional infrared light source.
How to realize the design of pulse sensor under the screen, be about to pulse sensor integration on the screen, and do not influence the display function of cell-phone, paste the sensing position and just can gather pulse data and know real-time health on the skin near the pulse when the user, be the technical problem that needs to solve at present urgently.
Disclosure of Invention
The purpose of the invention is as follows: aiming at the problems and the defects in the prior art, the invention provides the sensor for measuring the pulse signal, which is suitable for the full-screen integration of the mobile phone, has the advantages of simple preparation, easy integration, high sensitivity and no influence on the normal functions of the mobile phone.
The technical scheme is as follows: a comprehensive screen integrated pulse sensor comprises a display panel arranged on an electronic product, and is characterized by further comprising a sensor layer positioned above or below the display panel, wherein the sensor layer comprises a silicon-germanium nanowire radial junction, a quantum dot layer and a transparent bottom electrode; the display panel is provided with a normal display area and a pulse sensor array area; the silicon-germanium nanowire radial junctions are distributed on the transparent bottom electrode above the quantum dot layer in an array mode, and the transparent bottom electrode is connected with a phase-locked amplifier of an electronic product.
The quantum dot layer is disposed between the display panel and a transparent bottom electrode when the sensor layer is over the display panel; when the sensor layer is positioned below the display panel, the quantum dot layer is positioned between the backlight module and the transparent bottom electrode of the electronic product.
The invention further defines the technical scheme as follows: the quantum dot layer is PbS, PbSe, PbTe, InAs/ZnCdS or InAs/InP/ZnSe, the absorption wavelength of the quantum dot is 300-800nm, and the light-emitting wavelength is 800-830 nm.
Preferably, the transparent bottom electrode material is ITO glass or AZO glass.
Preferably, the silicon-germanium nanowire radial junction is of a pin silicon-germanium radial junction structure, wherein the p layer is boron-doped amorphous silicon, the i layer is amorphous silicon-germanium, and the n layer is phosphorus-doped amorphous silicon.
Preferably, the silicon germanium nanowire array further comprises a transparent packaging layer arranged between the radial direction of the silicon germanium nanowire and the transparent bottom electrode, and the transparent packaging layer is PDMS, PMMA or silica gel.
The application also relates to a preparation method of the comprehensive screen integrated pulse sensor, which is characterized by comprising the following steps:
step a: photoetching an arrayed sensing area on the transparent bottom electrode;
step b: depositing a metal tin layer with the thickness of 4nm on the arrayed sensing area;
step c: putting the transparent bottom electrode deposited with the tin layer into a PECVD reaction furnace, and introducing hydrogen at 350 ℃ to lead tin shrinkage balls to serve as catalysts to guide nanowire growth;
step d: heating the PECVD reaction furnace to the nanowire growth temperature, and introducing hydrogen, silane and borane to grow the p-type silicon nanowire;
step e: cooling the PECVD reaction furnace to the deposition temperature of amorphous silicon, and simultaneously introducing hydrogen, silane and germane to deposit an intrinsic amorphous silicon-germanium layer;
step f: keeping the deposition temperature, introducing hydrogen, silane and phosphine, and depositing an n-type amorphous silicon layer;
step g: packaging the device by packaging glue;
step h: and coating the quantum dots below the transparent bottom electrode.
Preferably, in step a, the array of arrayed sensing regions is arranged as an array of blocks with a side length of 50-100 micrometers, and the blocks are spaced at least 100 micrometers apart.
Preferably, in the step e, the deposition thickness of the amorphous silicon germanium layer is 80-100 nanometers.
Preferably, in the step f, the thickness of the n-type amorphous silicon layer is 5 to 10 nanometers.
Has the advantages that: compared with the prior art, the method has the advantages that the silicon germanium nanowire radial junction film is prepared to collect signals, the pulse sensor devices are very tiny and are distributed in the screen in an arrayed mode, sufficient information can be collected while screen display is not influenced, the functions of the mobile phone can be expanded, and the method is suitable for the development trend of a full-face screen. The quantum dots are used as infrared light sources, an infrared diode does not need to be additionally integrated, and the LED infrared lamp is light in structure and high in integration level. The adopted silicon germanium radial junction has good absorption efficiency in a near infrared band window of a living organism and can be used for measuring more accurately.
Drawings
FIG. 1 is a schematic diagram of a pulse sensor in accordance with embodiment 1 of the present invention;
FIG. 2 is a flow chart of the preparation of SiGe nanowires in example 1 of the present invention;
FIG. 3 is a schematic view and an SEM image of a radial junction structure of a SiGe nanowire in example 1 of the present invention;
fig. 4 is a comparison graph of signals of a conventional commercial pulse sensor and a sige pulse sensor of the present embodiment.
Fig. 5 is a schematic structural diagram of a pulse sensor in embodiment 2 of the present invention.
Detailed Description
The invention is further elucidated with reference to the drawings and the embodiments.
Example 1
As shown in fig. 1, the present embodiment provides a full-screen integrated pulse sensor, which is mainly integrated on a mobile phone and includes a display panel, a quantum dot layer, a transparent bottom electrode, a silicon germanium nanowire radial junction, and a transparent encapsulation layer. The display panel is provided with a normal display area and a pulse sensor array area; the quantum dot layer is arranged above the display panel corresponding to the pulse sensor array area, the silicon-germanium nanowire radial junctions are distributed on the transparent bottom electrode above the quantum dot layer in an array mode, the transparent bottom electrode is connected with a phase-locked amplifier of a mobile phone, and the quantum dot layer and the silicon-germanium nanowire radial junction array are packaged and fixed through the transparent packaging layer.
The measurement principle of the pulse sensor of the embodiment is as follows: the display panel provides a light source for the pulse sensor, light emitted by the display panel of the mobile phone is converted into near infrared light through the quantum dots to irradiate the pulse skin, and then reflected light is collected by the silicon germanium nanowire radial junction. When the pulse is generated, the skin near the pulse vibrates, and the reflected light carries pulse information in the original incident frequency. The frequencies of the incident light and the reflected light are compared by the lock-in amplifier of the mobile phone itself, and as shown in fig. 4, the corresponding pulse signal can be read.
The embodiment also provides a preparation method of the full-screen integrated pulse sensor, which mainly comprises the following steps:
a) photoetching an arrayed sensing area on the transparent electrode; the pulse sensors are arrayed, masks with square hollows of 50-100 micrometers in array are prepared through a photoetching method, and the hollow masks are spaced at intervals of 100 micrometers;
b) thermally evaporating a metal tin layer with the thickness of 4nm on the hollow mask in the step a) by using thermal evaporation;
c) putting the transparent bottom electrode deposited with the metallic tin layer into a PECVD reaction furnace, and introducing hydrogen under the conditions of 350 ℃ and 30pa pressure to lead the metallic tin shrinkage ball to be used as a catalyst to guide the growth of the nanowire, as shown in figure 2 (a);
d) heating the PECVD reaction furnace to the nanowire growth temperature of 520 ℃, and introducing hydrogen, silane and borane to grow the p-type silicon nanowire as shown in figure 2 (b);
e) cooling the PECVD reaction furnace to the deposition temperature of the amorphous silicon of 260 ℃, introducing hydrogen, silane and germane, and depositing an intrinsic amorphous silicon-germanium layer;
f) maintaining the deposition temperature, introducing hydrogen, silane and phosphine, and depositing an n-type amorphous silicon layer; as shown in FIG. 2 (c);
g) packaging the device by using packaging glue;
h) and coating the quantum dots below the transparent bottom electrode and in the middle of the display panel.
Preferably, the transparent bottom electrode in this embodiment is made of ITO glass or AZO glass.
Preferably, in the step e, the thickness of the amorphous silicon germanium deposition is 80-100 nanometers.
Preferably, in the step f, the thickness of the n-type amorphous silicon layer is 5-10 nm.
Preferably, in step g, the encapsulating adhesive may be PDMS, PMMA or silicone.
Preferably, in the step h, the quantum dots can be near-infrared quantum dots such as PbS, PbSe, PbTe, InAs/ZnCdS, InAs/InP/ZnSe and the like.
Fig. 3 (a) and 3 (b) are a cross-sectional view and an SEM representation of the radial junction of the sige nanowire prepared by the above steps, respectively, where the inner nanowire is a p-pole, the outer amorphous si is an n-pole, and the intrinsic amorphous sige layer is in the middle, and photoelectrons are collected in the intrinsic layer.
In addition to nanowires, the structure described in this example employs quantum dots as the visible to near-infrared conversion layer. Preferably, PbS (particle size of 9.5-10.5 nm), PbSe (particle size of 7-12), InAs/ZnCdS (particle size of 10 nm) and InAs/InP/ZnSe (particle size of 15.9 nm) can be used, the selected quantum dots need to absorb visible light of 300-800nm, and the light-emitting wavelength is 800-830 nm.
As shown in fig. 4, the pulse signal measured by the sige nanowire device (fig. 4 (b)) and the commercially available signal (fig. 4 (a)) have very close sensitivities and can be used as reference data for detecting the physical condition.
Example 2
The structure of the present embodiment is basically the same as the embodiment, except that: the display panel in this embodiment is located above the sige nanowire radial junction and the transparent encapsulation layer, and the quantum dot layer is located between the transparent bottom electrode and the backlight module of the electronic product, as shown in fig. 5. The preparation method is correspondingly adjusted on the basis of the preparation method of the embodiment 1.
The foregoing is only a preferred embodiment of this invention and it should be noted that modifications can be made by those skilled in the art without departing from the principle of the invention and these modifications should also be considered as the protection scope of the invention.
Claims (10)
1. A preparation method of a comprehensive screen integrated pulse sensor is characterized by comprising the following steps:
step a: photoetching an arrayed sensing area on the transparent bottom electrode;
step b: depositing a metal tin layer with the thickness of 4 nanometers on the arrayed sensing area;
step c: putting the transparent bottom electrode deposited with the tin layer into a PECVD reaction furnace, and introducing hydrogen at 350 ℃ to lead the tin shrinkage balls to be used as a catalyst to guide the growth of the nanowires;
step d: heating the PECVD reaction furnace to the nanowire growth temperature, and introducing hydrogen, silane and borane to grow the p-type silicon nanowire;
step e: cooling the PECVD reaction furnace to the deposition temperature of amorphous silicon, and simultaneously introducing hydrogen, silane and germane to deposit an intrinsic amorphous silicon-germanium layer;
step f: keeping the deposition temperature, introducing hydrogen, silane and phosphine, and depositing an n-type amorphous silicon layer;
step g: packaging the sensor array area by packaging glue;
step h: and coating the quantum dots below the transparent bottom electrode.
2. The method for preparing a full-screen integrated pulse sensor according to claim 1, wherein: in the step a, the array of the arrayed sensing area is arranged into a square array with the side length of 50-100 micrometers, and the interval between the squares is at least 100 micrometers.
3. The method for preparing a full-screen integrated pulse sensor according to claim 1, wherein: in the step e, the deposition thickness of the amorphous silicon-germanium layer is 80-100 nanometers.
4. The method for preparing a full-screen integrated pulse sensor according to claim 1, wherein: in the step f, the thickness of the n-type amorphous silicon layer is 5-10 nanometers.
5. The method for preparing a full-screen integrated pulse sensor according to claim 1, wherein the full-screen integrated pulse sensor comprises a display panel disposed on an electronic product and a sensor layer disposed above or below the display panel; the sensor layer comprises a silicon-germanium nanowire radial junction, a quantum dot layer and a transparent bottom electrode; the display panel is provided with a normal display area and a pulse sensor array area; the silicon-germanium nanowire radial junctions are distributed on the transparent bottom electrode above the quantum dot layer in an array mode, and the transparent bottom electrode is connected with a phase-locked amplifier of an electronic product.
6. The method for preparing a full-screen integrated pulse sensor according to claim 5, wherein:
the quantum dot layer is disposed between the display panel and a transparent bottom electrode when the sensor layer is over the display panel;
when the sensor layer is positioned below the display panel, the quantum dot layer is positioned between the backlight module and the transparent bottom electrode of the electronic product.
7. The method for preparing a comprehensive screen integrated pulse sensor according to claim 5, wherein the quantum dot layer is PbS, PbSe, PbTe, InAs/ZnCdS or InAs/InP/ZnSe, and the quantum dots have an absorption wavelength of 300-800nm and a luminescence wavelength of 800-830 nm.
8. The method for manufacturing a comprehensive screen integrated pulse sensor according to claim 5, wherein the transparent bottom electrode material is ITO glass or AZO glass.
9. The method for preparing a full-screen integrated pulse sensor according to claim 5, wherein: the silicon-germanium nanowire radial junction is of a pin silicon-germanium radial junction structure, wherein the p layer is boron-doped amorphous silicon, the i layer is amorphous silicon-germanium, and the n layer is phosphorus-doped amorphous silicon.
10. The method for preparing a full-screen integrated pulse sensor according to claim 5, wherein: the silicon germanium nanowire junction structure further comprises a transparent packaging layer arranged between the silicon germanium nanowire junction and the transparent bottom electrode, and the transparent packaging layer is PDMS, PMMA or silica gel.
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