CN111540655A - Light-emitting backlight source with staggered-cutting oblique ridge simple surface cathode-based different-curvature gate control structure - Google Patents
Light-emitting backlight source with staggered-cutting oblique ridge simple surface cathode-based different-curvature gate control structure Download PDFInfo
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- CN111540655A CN111540655A CN202010387102.9A CN202010387102A CN111540655A CN 111540655 A CN111540655 A CN 111540655A CN 202010387102 A CN202010387102 A CN 202010387102A CN 111540655 A CN111540655 A CN 111540655A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J17/00—Gas-filled discharge tubes with solid cathode
- H01J17/02—Details
- H01J17/04—Electrodes; Screens
- H01J17/06—Cathodes
- H01J17/066—Cold cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J17/00—Gas-filled discharge tubes with solid cathode
- H01J17/02—Details
- H01J17/04—Electrodes; Screens
- H01J17/12—Control electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
Abstract
The invention discloses a light-emitting backlight source with a staggered oblique ridge simple surface cathode leaning different-curve gating structure, which comprises a vacuum enclosure and an auxiliary element of a getter, wherein the auxiliary element is positioned in the vacuum enclosure; the front hard transparent glass plate is provided with an anode transparent film cushion layer, an anode adjacent long silver layer and a thin light-emitting layer, the anode transparent film cushion layer is connected with the anode adjacent long silver layer, and the thin light-emitting layer is manufactured on the anode transparent film cushion layer; and a staggered oblique ridge profile cathode leaning different-curve gating structure is arranged on the rear hard transparent glass plate. The backlight has the advantage of good adjustable performance of the light-emitting gray scale of the light-emitting backlight.
Description
Technical Field
The invention belongs to the field of semiconductor science and technology, nano science and technology, integrated circuit science and technology, microelectronic science and technology, plane display technology, photoelectron science and technology, and the field of vacuum science and technology, and relates to the manufacture of plane light-emitting backlight, in particular to the manufacture of a plane light-emitting backlight with a carbon nano tube cathode, in particular to a light-emitting backlight with a cut-off staggered inclined ridge simple surface cathode leaning different curved gate control structure and a manufacture process thereof.
Background
The carbon nanotube cathode has excellent electron emission characteristics, and can be applied to light-emitting backlight source components to provide cathode current for the light-emitting backlight source. Since the carbon nanotube has an extremely high mechanical strength, the carbon nanotube can withstand processes such as printing, grinding, and the like without being damaged. Researchers have conducted extensive research and study in the field of pattern preparation of carbon nanotube cathodes, and the like. However, in the light emitting backlight of the three-pole structure, the following technical problems are still to be overcome. First, the gate electrode has poor control over the electron emission from the carbon nanotube cathode. The gate electrode is added to enhance the control of the electron emission of the carbon nanotube cathode, which is also the essential role of the gate electrode. The gate has many manifestations of runaway phenomena on carbon nanotube cathodes, such as: when a smaller gate voltage is applied, the carbon nanotube cathode does not emit electrons at all; after the carbon nano tube carries out electron emission, the cathode of the carbon nano tube does not stop the electron emission along with the removal of the gate voltage; and so on. The gate setting is meaningless unless the gate voltage is avoided and effective measures are taken for the carbon nanotube cathode out of control. Second, the electron emission of the carbon nanotube cathode is very non-uniform. In the same carbon nanotube layer, some carbon nanotubes emit electrons, but most of the carbon nanotubes do not emit electrons, so that the electron emission density of the carbon nanotubes is quite unbalanced; the electron emission currents of different carbon nanotube layers are not exactly the same, and some of the cathode currents are larger and some of the cathode currents are smaller. The above technical problem needs to be seriously explored.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to overcome the defects and shortcomings of the light-emitting backlight source and provide the light-emitting backlight source with the staggered and obliquely-threshold simple-surface cathode-based different-curvature gating structure and the manufacturing process thereof, wherein the light-emitting backlight source has high light-emitting brightness and good light-emitting gray scale adjustability.
The technical scheme is as follows: the invention discloses a light-emitting backlight source with an interval-cut oblique ridge simple surface cathode leaning different-curve gating structure, which comprises a vacuum enclosure and an auxiliary element of a getter positioned in the vacuum enclosure, wherein the vacuum enclosure consists of a front hard transparent glass plate, a rear hard transparent glass plate and a glass narrow frame strip; the front hard transparent glass plate is provided with an anode transparent film cushion layer, an anode adjacent long silver layer and a thin light-emitting layer, the anode transparent film cushion layer is connected with the anode adjacent long silver layer, and the thin light-emitting layer is manufactured on the anode transparent film cushion layer; and a staggered oblique ridge profile cathode leaning different-curve gating structure is arranged on the rear hard transparent glass plate.
Specifically, the substrate of the staggered-cutting oblique ridge simple surface cathode leaning different-curve gating structure is a rear hard transparent glass plate; forming a gray black stop layer by printing the insulating slurry layer on the rear hard transparent glass plate; the printed silver paste layer on the gray black stop layer forms a cathode adjacent long silver layer; forming a cathode dislocation lower layer by the printed insulating slurry layer on the cathode adjacent long silver layer; the lower surface of the cathode dislocation bank lower layer is a circular plane and is positioned on the cathode adjacent long silver layer, the upper surface of the cathode dislocation bank lower layer is a circular plane, the upper surface and the lower surface of the cathode dislocation bank lower layer are parallel to each other, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode dislocation bank lower layer are superposed with each other, the diameter of the upper surface of the cathode dislocation bank lower layer is equal to that of the lower surface, and the outer side surface of the cathode dislocation bank lower layer is a cylindrical surface; square holes are formed in the lower layer of the cathode dislocation bank, and a silver paste layer printed in the square holes forms a cathode interconnection line layer; one layer of the cathode interconnection line is communicated with the cathode adjacent long silver layer; the printed silver paste layer on the upper surface of the lower layer of the cathode dislocation bank forms a cathode interconnection line two layer; the second layer of cathode interconnection lines and the first layer of cathode interconnection lines are communicated with each other; the printed silver paste layer on the upper surface of the lower layer of the cathode dislocation bank forms a cathode plane flat electrode; the cathode simple-surface flat electrode is positioned on the upper surface of the cathode dislocation bank lower layer and is in a hollow circular ring surface shape, and the outer ring edge of the cathode simple-surface flat electrode is flush with the outer edge of the upper surface of the cathode dislocation bank lower layer; the cathode simple plane flat electrode and the cathode interconnection line two layers are communicated with each other; forming a cathode dislocation threshold middle layer by the printed insulating slurry layer on the upper surface of the cathode dislocation threshold lower layer; the lower surface of the cathode dislocation threshold middle layer is a circular plane and is positioned on the upper surface of the cathode dislocation threshold lower layer, the central vertical line of the lower surface of the cathode dislocation threshold middle layer and the central vertical line of the upper surface of the cathode dislocation threshold lower layer are mutually overlapped, the diameter of the lower surface of the cathode dislocation threshold middle layer is equal to the diameter of the inner ring of the cathode simple plane electrode, the upper surface of the cathode dislocation threshold middle layer is a circular plane, the upper surface and the lower surface of the cathode dislocation threshold middle layer are mutually parallel, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode dislocation threshold middle layer are mutually overlapped, the diameter of the upper surface of the cathode dislocation threshold middle layer is smaller than the diameter of the lower surface, the outer side surface of the cathode dislocation threshold middle layer is an inclined slope surface, and the; a square hole is formed in the cathode dislocation bank middle layer, and a silver paste layer printed in the square hole forms three cathode interconnection lines; the three layers of the cathode interconnection lines and one layer of the cathode interconnection lines are communicated with each other; forming four layers of cathode interconnection lines on the printed silver paste layer on the upper surface of the cathode dislocation middle layer; the four layers of the cathode interconnection lines and the three layers of the cathode interconnection lines are communicated with each other; the printed silver paste layer on the outer side surface of the cathode dislocation threshold median layer forms a cathode plane deflection electrode; the cathode simple surface deflection electrode is positioned on the outer side surface of the cathode dislocation threshold middle layer, the upper edge of the cathode simple surface deflection electrode faces the direction of the upper surface of the cathode dislocation threshold middle layer and is flush with the outer edge of the upper surface of the cathode dislocation threshold middle layer, and the lower edge of the cathode simple surface deflection electrode faces the direction of the lower surface of the cathode dislocation threshold middle layer and is not flush with the outer edge of the lower surface of the cathode dislocation threshold middle layer; the cathode simple plane bias electrode and the cathode interconnection line are communicated with each other; forming a cathode false bank covering layer on the printed insulating paste layer on the upper surface of the cathode false bank middle layer; the lower surface of the cathode dislocation threshold covering layer is positioned on the upper surface of the cathode dislocation threshold median layer, and the central vertical line of the lower surface of the cathode dislocation threshold covering layer and the central vertical line of the upper surface of the cathode dislocation threshold median layer are mutually overlapped; the insulating paste layer printed on the gray-black stop layer forms a gate electrode leaning layer; the lower surface of the first layer of gate electrode leaning against the bottom is a plane and is positioned on the gray and black stop layer, a circular hole is formed in the first layer of gate electrode leaning against the bottom, the gray and black stop layer, the cathode adjacent long silver layer, the cathode staggered bank lower layer, the cathode interconnection line layer, the cathode simple surface flat electrode, the cathode staggered bank middle layer, the cathode interconnection line layer, the cathode simple surface bias electrode and the cathode staggered bank covering layer are exposed in the circular hole, and the inner side surface of the circular hole of the first layer of gate electrode leaning against the bottom is an upright cylindrical surface; forming a gate electrode differential-curvature front electrode by the printed silver paste layer on the gate electrode layer; the front end of the gate electrode differential curve front electrode faces the inner side surface direction of the round hole at the bottom layer of the gate electrode, the rear end faces the inner side surface direction of the round hole at the bottom layer of the gate electrode, and the front end of the gate electrode differential curve front electrode is flush with the inner side surface of the round hole at the bottom layer of the gate electrode; the gate electrode leaning bottom layer and the gate electrode differential curve front electrode are printed with insulating slurry layers to form a gate electrode leaning bottom layer; the gate electrode forms a gate electrode differential-curvature rear electrode by depending on the printed silver paste layer on the bottom two layers; the front tail end of the gate electrode differential-curvature rear electrode faces the inner side surface direction of a round hole at the bottom layer of the gate electrode, and the rear tail end faces the inner side surface direction of a round hole at the bottom layer of the gate electrode; the gate electrode differential-curvature rear electrode and the gate electrode differential-curvature front electrode are communicated with each other; the insulating paste layer printed on the gray and black blocking layer forms a gate electrode leaning bottom three layers; forming gate electrode adjacent long silver layers by the printed silver paste layers on the gate electrode bottom three layers; the gate electrode adjacent long silver layer and the gate electrode irregular-curve rear electrode are communicated with each other; the printed insulating slurry layers on the gate electrode differential-curvature front electrode and the gate electrode differential-curvature rear electrode form four layers of gate electrode dependent bottom; the carbon nanotube layer is arranged on the cathode simple plane flat electrode and the cathode simple plane bias electrode.
Specifically, the substrate of the staggered-cutting oblique ridge simple surface cathode leaning different-curvature gate control structure is a rear hard transparent glass plate.
Specifically, the rear hard transparent glass plate is made of borosilicate glass or soda-lime glass.
The invention also provides a manufacturing process of the light-emitting backlight source with the staggered-cutting oblique-ridge simple-surface cathode-based hetero-curved gate control structure, which comprises the following steps of:
1) manufacturing a rear hard transparent glass plate: and (4) scribing the plane soda-lime glass to form the rear hard transparent glass plate.
2) Preparing a gray black stop layer: and printing insulating slurry on the rear hard transparent glass plate, and baking and sintering to form a gray black stop layer.
3) Preparing a cathode adjacent long silver layer: and printing silver paste on the gray black plug layer, and baking and sintering to form a cathode adjacent long silver layer.
4) Manufacturing a lower layer of the cathode dislocation: and printing insulating slurry on the adjacent long silver layer of the cathode, and forming a cathode dislocation lower layer after baking and sintering processes.
5) And (3) manufacturing a cathode interconnection line layer: and printing silver paste in the square hole of the lower layer of the cathode dislocation, and forming a cathode interconnection line layer after baking and sintering processes.
6) And (3) manufacturing two layers of cathode interconnection wires: silver paste is printed on the upper surface of the lower layer of the cathode dislocation, and two layers of cathode interconnection lines are formed after baking and sintering processes.
7) Manufacturing a cathode simple plane flat electrode: and printing silver paste on the upper surface of the lower layer of the cathode dislocation, and baking and sintering to form the cathode simple-surface flat electrode.
8) Manufacturing a cathode dislocation ridge middle layer: and printing insulating slurry on the upper surface of the lower layer of the cathode dislocation bank, and forming the middle layer of the cathode dislocation bank after baking and sintering processes.
9) And (3) manufacturing three layers of cathode interconnection wires: and printing silver paste in the square hole of the middle layer of the cathode dislocation bank, and forming three layers of cathode interconnection lines after baking and sintering processes.
10) And (3) manufacturing four layers of cathode interconnection wires: and printing silver paste on the upper surface of the middle layer of the cathode dislocation bank, and baking and sintering to form four layers of cathode interconnection lines.
11) And (3) manufacturing a cathode simple surface offset electrode: and printing silver paste on the outer side surface of the cathode dislocation middle layer, and forming the cathode simple plane offset electrode after baking and sintering processes.
12) Manufacturing a cathode false bank covering layer: and printing insulating slurry on the upper surface of the cathode dislocation sill median layer, and forming a cathode dislocation sill covering layer after baking and sintering processes.
13) Manufacturing a gate electrode at the bottom layer: and printing insulating slurry on the gray black stop layer, and baking and sintering to form a gate electrode dependent bottom layer.
14) Manufacturing a gate electrode different-curvature front electrode: and printing silver paste on the bottom layer of the gate electrode, and baking and sintering to form the gate electrode front electrode with different curvature.
15) Manufacturing a gate electrode-dependent bottom two-layer: and printing insulating slurry on the gate electrode leaning bottom layer and the gate electrode different-curvature front electrode, and baking and sintering to form a gate electrode leaning bottom two layer.
16) Manufacturing a gate electrode different-curvature rear electrode: silver paste is printed on the two layers of the gate electrode leaning bottom, and the gate electrode different-curvature rear electrode is formed after baking and sintering processes.
17) And (3) manufacturing three layers of gate electrodes: and printing insulating slurry on the gray black blocking layer, and baking and sintering to form a gate electrode-dependent bottom three layer.
18) Manufacturing a gate adjacent long silver layer: silver paste is printed on the three layers of the gate electrode leaning bottom, and the gate electrode adjacent long silver layer is formed after baking and sintering processes.
19) Manufacturing four layers of gate electrodes: and printing insulating slurry on the gate electrode differential-curvature front electrode and the gate electrode differential-curvature rear electrode, and baking and sintering to form four layers of gate electrode dependent bottoms.
20) Cleaning of the staggered oblique ridge simple surface cathode leaning different-curve gating structure: and cleaning the surface of the alternate-cutting oblique ridge simple surface cathode leaning different-curve gating structure to remove impurities and dust.
21) Manufacturing a carbon nanotube layer: and manufacturing the carbon nano tube on the cathode simple plane flat electrode and the cathode simple plane bias electrode to form a carbon nano tube layer.
22) And (3) processing the carbon nanotube layer: and post-treating the carbon nano tube layer to improve the electron emission characteristic.
23) Manufacturing a front hard transparent glass plate: and scribing the plane soda-lime glass to form a front hard transparent glass plate.
24) Preparing an anode permeable membrane cushion layer: and etching the tin-indium oxide film layer covered on the surface of the front hard transparent glass plate to form an anode transparent film cushion layer.
25) Preparing an anode adjacent long silver layer: and printing silver paste on the front hard transparent glass plate, and baking and sintering to form an anode adjacent long silver layer.
26) Manufacturing a thin light-emitting layer: and printing fluorescent powder on the anode transparent film cushion layer, and forming a thin light-emitting layer after a baking process.
27) Assembling the light-emitting backlight source device: mounting a getter to a non-display area of the front hard transparent glass plate; and then assembling the front hard transparent glass plate, the rear hard transparent glass plate and the glass narrow frame strip together and fixing the glass narrow frame strip by using a clamp.
28) Packaging the light-emitting backlight source device: and carrying out packaging process on the assembled light-emitting backlight source device to form a finished product.
Specifically, in step 25, silver paste is printed on the non-display area of the front hard transparent glass plate, and after the baking process, the maximum baking temperature is: 192 ℃, maximum baking temperature holding time: 7.5 minutes; placing the mixture in a sintering furnace for sintering, wherein the maximum sintering temperature is as follows: 532 ℃, maximum sintering temperature holding time: 9.5 minutes.
Specifically, in step 26, phosphor is printed on the anode transparent film pad layer, and then the anode transparent film pad layer is placed in an oven for a baking process, wherein the maximum baking temperature is as follows: 152 ℃, maximum baking temperature hold time: 7.5 minutes.
Specifically, in step 28, the packaging process includes placing the light-emitting backlight device in an oven for baking; sintering in a sintering furnace; exhausting and sealing off on an exhaust table; baking the getter on a baking machine; and finally, additionally installing pins to form a finished product.
Has the advantages that: the invention has the following remarkable progress:
firstly, in the gap-cut oblique ridge simple surface cathode-dependent hetero-curved gate control structure, a gate hetero-curved front electrode and a gate hetero-curved rear electrode are manufactured. The gate electrode differential-bending front electrode and the gate electrode differential-bending rear electrode are both made of silver layers, have good conductivity and can smoothly transfer gate electrode potential to the surface of the carbon nano tube. Meanwhile, the gate electrode differential-curvature front electrode and the gate electrode differential-curvature rear electrode act together to promote the carbon nano tube cathode to emit a large amount of electrons, thereby embodying the powerful control effect of the gate electrode on the carbon nano tube cathode. This is very advantageous for increasing the luminance of a luminescent backlight.
And secondly, manufacturing a cathode simple plane flat electrode and a cathode simple plane offset electrode in the staggered inclined ridge simple plane cathode-dependent differential curved gate control structure. The cathode simple plane flat electrode has a large surface area, and the cathode simple plane bias electrode also has a large surface area. That is to say, the manufacturing of the cathode simple plane flat electrode and the cathode simple plane offset electrode greatly expands the manufacturing area of the carbon nanotube layer, so that more carbon nanotubes participate in electron emission. This is extremely helpful to further improve the emission gradation adjustability of the emission backlight.
Thirdly, in the staggered oblique ridge simple surface cathode-dependent differential curved gate control structure, the carbon nanotube layer is manufactured on a cathode simple surface flat electrode and a cathode simple surface bias electrode. The cathode simple plane flat electrode has a large cathode edge, the cathode simple plane bias electrode also has a large cathode edge, and the carbon nano tube positioned at the cathode edge can emit more electrons, thereby being beneficial to improving the luminous brightness of the luminous backlight source and improving the luminous gray scale adjustability of the luminous backlight source.
In addition, no special manufacturing material is adopted in the light-emitting backlight source with the staggered-cutting inclined ridge simple-surface cathode leaning different-curve gating structure, so that the manufacturing cost of the whole light-emitting backlight source is reduced.
Drawings
FIG. 1 shows a schematic diagram of a longitudinal structure of a cathode-dependent differential curved gate structure with a staggered oblique threshold.
FIG. 2 shows a schematic diagram of a lateral structure of an isolated-cut-off-oblique-threshold simple-surface cathode-dependent hetero-curved gate structure.
Fig. 3 is a schematic structural diagram of a light-emitting backlight with an offset-cut oblique-threshold simple-surface cathode-dependent differential-curvature gate control structure.
In the figure, a rear hard transparent glass plate 1, a gray-black stopping layer 2, a cathode adjacent long silver layer 3, a cathode staggered lower layer 4, a cathode interconnection line layer 5, a cathode interconnection line layer two layer 6, a cathode simple plane flat electrode 7, a cathode staggered middle layer 8, a cathode interconnection line layer three layer 9, a cathode interconnection line four layer 10, a cathode simple plane bias electrode 11, a cathode staggered cover layer 12, a gate electrode dependent bottom layer 13, a gate electrode differential curved front electrode 14, a gate electrode dependent bottom two layer 15, a gate electrode differential curved rear electrode 16, a gate electrode dependent bottom three layer 17, a gate electrode adjacent long silver layer 18, a gate electrode dependent bottom four layer 19, a carbon nanotube layer 20, a front hard transparent glass plate 21, an anode flat transparent film cushion layer 22, an anode adjacent long silver layer 23, a thin light-emitting layer 24, a getter 25 and a glass narrow frame strip 26.
Detailed Description
The present invention will be further described with reference to the drawings and examples, but the present invention is not limited to the examples.
The light-emitting backlight source of the staggered oblique threshold simple surface cathode leaning different-curvature gating structure of the embodiment is as shown in fig. 1, fig. 2 and fig. 3, and comprises a vacuum enclosure and an accessory component of a getter 25 positioned in the vacuum enclosure, wherein the vacuum enclosure is composed of a front hard transparent glass plate 21, a rear hard transparent glass plate 1 and a glass narrow frame strip 26; an anode transparent film cushion layer 22, an anode adjacent long silver layer 23 and a thin light-emitting layer 24 are arranged on the front hard transparent glass plate, the anode transparent film cushion layer is connected with the anode adjacent long silver layer, and the thin light-emitting layer is manufactured on the anode transparent film cushion layer; and a staggered oblique ridge profile cathode leaning different-curve gating structure is arranged on the rear hard transparent glass plate.
The cathode-dependent hetero-curved gate control structure comprises a rear hard transparent glass plate 1, a gray-black stop layer 2, a cathode continuous long silver layer 3, a cathode dislocation lower layer 4, a cathode interconnection line layer 5, a cathode interconnection line layer 6, a cathode simple flat electrode 7, a cathode dislocation middle layer 8, a cathode interconnection line layer three 9, a cathode interconnection line layer four 10, a cathode simple bias electrode 11, a cathode dislocation cover layer 12, a gate-dependent bottom layer 13, a gate-dependent front electrode 14, a gate-dependent bottom layer two 15, a gate-dependent rear electrode 16, a gate-dependent bottom layer three 17, a gate-dependent long silver layer 18, a gate-dependent bottom layer four 19 and a carbon nanotube layer 20.
The substrate of the staggered-cutting oblique ridge simple surface cathode leaning different-curve gating structure is a rear hard transparent glass plate; forming a gray black stop layer by printing the insulating slurry layer on the rear hard transparent glass plate; the printed silver paste layer on the gray black stop layer forms a cathode adjacent long silver layer; forming a cathode dislocation lower layer by the printed insulating slurry layer on the cathode adjacent long silver layer; the lower surface of the cathode dislocation bank lower layer is a circular plane and is positioned on the cathode adjacent long silver layer, the upper surface of the cathode dislocation bank lower layer is a circular plane, the upper surface and the lower surface of the cathode dislocation bank lower layer are parallel to each other, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode dislocation bank lower layer are superposed with each other, the diameter of the upper surface of the cathode dislocation bank lower layer is equal to that of the lower surface, and the outer side surface of the cathode dislocation bank lower layer is a cylindrical surface; square holes are formed in the lower layer of the cathode dislocation bank, and a silver paste layer printed in the square holes forms a cathode interconnection line layer; one layer of the cathode interconnection line is communicated with the cathode adjacent long silver layer; the printed silver paste layer on the upper surface of the lower layer of the cathode dislocation bank forms a cathode interconnection line two layer; the second layer of cathode interconnection lines and the first layer of cathode interconnection lines are communicated with each other; the printed silver paste layer on the upper surface of the lower layer of the cathode dislocation bank forms a cathode plane flat electrode; the cathode simple-surface flat electrode is positioned on the upper surface of the cathode dislocation bank lower layer and is in a hollow circular ring surface shape, and the outer ring edge of the cathode simple-surface flat electrode is flush with the outer edge of the upper surface of the cathode dislocation bank lower layer; the cathode simple plane flat electrode and the cathode interconnection line two layers are communicated with each other; forming a cathode dislocation threshold middle layer by the printed insulating slurry layer on the upper surface of the cathode dislocation threshold lower layer; the lower surface of the cathode dislocation threshold middle layer is a circular plane and is positioned on the upper surface of the cathode dislocation threshold lower layer, the central vertical line of the lower surface of the cathode dislocation threshold middle layer and the central vertical line of the upper surface of the cathode dislocation threshold lower layer are mutually overlapped, the diameter of the lower surface of the cathode dislocation threshold middle layer is equal to the diameter of the inner ring of the cathode simple plane electrode, the upper surface of the cathode dislocation threshold middle layer is a circular plane, the upper surface and the lower surface of the cathode dislocation threshold middle layer are mutually parallel, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode dislocation threshold middle layer are mutually overlapped, the diameter of the upper surface of the cathode dislocation threshold middle layer is smaller than the diameter of the lower surface, the outer side surface of the cathode dislocation threshold middle layer is an inclined slope surface, and the; a square hole is formed in the cathode dislocation bank middle layer, and a silver paste layer printed in the square hole forms three cathode interconnection lines; the three layers of the cathode interconnection lines and one layer of the cathode interconnection lines are communicated with each other; forming four layers of cathode interconnection lines on the printed silver paste layer on the upper surface of the cathode dislocation middle layer; the four layers of the cathode interconnection lines and the three layers of the cathode interconnection lines are communicated with each other; the printed silver paste layer on the outer side surface of the cathode dislocation threshold median layer forms a cathode plane deflection electrode; the cathode simple surface deflection electrode is positioned on the outer side surface of the cathode dislocation threshold middle layer, the upper edge of the cathode simple surface deflection electrode faces the direction of the upper surface of the cathode dislocation threshold middle layer and is flush with the outer edge of the upper surface of the cathode dislocation threshold middle layer, and the lower edge of the cathode simple surface deflection electrode faces the direction of the lower surface of the cathode dislocation threshold middle layer and is not flush with the outer edge of the lower surface of the cathode dislocation threshold middle layer; the cathode simple plane bias electrode and the cathode interconnection line are communicated with each other; forming a cathode false bank covering layer on the printed insulating paste layer on the upper surface of the cathode false bank middle layer; the lower surface of the cathode dislocation threshold covering layer is positioned on the upper surface of the cathode dislocation threshold median layer, and the central vertical line of the lower surface of the cathode dislocation threshold covering layer and the central vertical line of the upper surface of the cathode dislocation threshold median layer are mutually overlapped; the insulating paste layer printed on the gray-black stop layer forms a gate electrode leaning layer; the lower surface of the first layer of gate electrode leaning against the bottom is a plane and is positioned on the gray and black stop layer, a circular hole is formed in the first layer of gate electrode leaning against the bottom, the gray and black stop layer, the cathode adjacent long silver layer, the cathode staggered bank lower layer, the cathode interconnection line layer, the cathode simple surface flat electrode, the cathode staggered bank middle layer, the cathode interconnection line layer, the cathode simple surface bias electrode and the cathode staggered bank covering layer are exposed in the circular hole, and the inner side surface of the circular hole of the first layer of gate electrode leaning against the bottom is an upright cylindrical surface; forming a gate electrode differential-curvature front electrode by the printed silver paste layer on the gate electrode layer; the front end of the gate electrode differential curve front electrode faces the inner side surface direction of the round hole at the bottom layer of the gate electrode, the rear end faces the inner side surface direction of the round hole at the bottom layer of the gate electrode, and the front end of the gate electrode differential curve front electrode is flush with the inner side surface of the round hole at the bottom layer of the gate electrode; the gate electrode leaning bottom layer and the gate electrode differential curve front electrode are printed with insulating slurry layers to form a gate electrode leaning bottom layer; the gate electrode forms a gate electrode differential-curvature rear electrode by depending on the printed silver paste layer on the bottom two layers; the front tail end of the gate electrode differential-curvature rear electrode faces the inner side surface direction of a round hole at the bottom layer of the gate electrode, and the rear tail end faces the inner side surface direction of a round hole at the bottom layer of the gate electrode; the gate electrode differential-curvature rear electrode and the gate electrode differential-curvature front electrode are communicated with each other; the insulating paste layer printed on the gray and black blocking layer forms a gate electrode leaning bottom three layers; forming gate electrode adjacent long silver layers by the printed silver paste layers on the gate electrode bottom three layers; the gate electrode adjacent long silver layer and the gate electrode irregular-curve rear electrode are communicated with each other; the printed insulating slurry layers on the gate electrode differential-curvature front electrode and the gate electrode differential-curvature rear electrode form four layers of gate electrode dependent bottom; the carbon nanotube layer is arranged on the cathode simple plane flat electrode and the cathode simple plane bias electrode.
The substrate of the staggered-cutting oblique ridge simple surface cathode leaning different-curve gating structure is a rear hard transparent glass plate.
The rear hard transparent glass plate is made of borosilicate glass or soda-lime glass.
The manufacturing process of the light-emitting backlight source with the staggered-cutting oblique ridge simple surface cathode leaning different-curve gating structure comprises the following steps of:
1) manufacturing a rear hard transparent glass plate: and (4) scribing the plane soda-lime glass to form the rear hard transparent glass plate.
2) Preparing a gray black stop layer: and printing insulating slurry on the rear hard transparent glass plate, and baking and sintering to form a gray black stop layer.
3) Preparing a cathode adjacent long silver layer: and printing silver paste on the gray black plug layer, and baking and sintering to form a cathode adjacent long silver layer.
4) Manufacturing a lower layer of the cathode dislocation: and printing insulating slurry on the adjacent long silver layer of the cathode, and forming a cathode dislocation lower layer after baking and sintering processes.
5) And (3) manufacturing a cathode interconnection line layer: and printing silver paste in the square hole of the lower layer of the cathode dislocation, and forming a cathode interconnection line layer after baking and sintering processes.
6) And (3) manufacturing two layers of cathode interconnection wires: silver paste is printed on the upper surface of the lower layer of the cathode dislocation, and two layers of cathode interconnection lines are formed after baking and sintering processes.
7) Manufacturing a cathode simple plane flat electrode: and printing silver paste on the upper surface of the lower layer of the cathode dislocation, and baking and sintering to form the cathode simple-surface flat electrode.
8) Manufacturing a cathode dislocation ridge middle layer: and printing insulating slurry on the upper surface of the lower layer of the cathode dislocation bank, and forming the middle layer of the cathode dislocation bank after baking and sintering processes.
9) And (3) manufacturing three layers of cathode interconnection wires: and printing silver paste in the square hole of the middle layer of the cathode dislocation bank, and forming three layers of cathode interconnection lines after baking and sintering processes.
10) And (3) manufacturing four layers of cathode interconnection wires: and printing silver paste on the upper surface of the middle layer of the cathode dislocation bank, and baking and sintering to form four layers of cathode interconnection lines.
11) And (3) manufacturing a cathode simple surface offset electrode: and printing silver paste on the outer side surface of the cathode dislocation middle layer, and forming the cathode simple plane offset electrode after baking and sintering processes.
12) Manufacturing a cathode false bank covering layer: and printing insulating slurry on the upper surface of the cathode dislocation sill median layer, and forming a cathode dislocation sill covering layer after baking and sintering processes.
13) Manufacturing a gate electrode at the bottom layer: and printing insulating slurry on the gray black stop layer, and baking and sintering to form a gate electrode dependent bottom layer.
14) Manufacturing a gate electrode different-curvature front electrode: and printing silver paste on the bottom layer of the gate electrode, and baking and sintering to form the gate electrode front electrode with different curvature.
15) Manufacturing a gate electrode-dependent bottom two-layer: and printing insulating slurry on the gate electrode leaning bottom layer and the gate electrode different-curvature front electrode, and baking and sintering to form a gate electrode leaning bottom two layer.
16) Manufacturing a gate electrode different-curvature rear electrode: silver paste is printed on the two layers of the gate electrode leaning bottom, and the gate electrode different-curvature rear electrode is formed after baking and sintering processes.
17) And (3) manufacturing three layers of gate electrodes: and printing insulating slurry on the gray black blocking layer, and baking and sintering to form a gate electrode-dependent bottom three layer.
18) Manufacturing a gate adjacent long silver layer: silver paste is printed on the three layers of the gate electrode leaning bottom, and the gate electrode adjacent long silver layer is formed after baking and sintering processes.
19) Manufacturing four layers of gate electrodes: and printing insulating slurry on the gate electrode differential-curvature front electrode and the gate electrode differential-curvature rear electrode, and baking and sintering to form four layers of gate electrode dependent bottoms.
20) Cleaning of the staggered oblique ridge simple surface cathode leaning different-curve gating structure: and cleaning the surface of the alternate-cutting oblique ridge simple surface cathode leaning different-curve gating structure to remove impurities and dust.
21) Manufacturing a carbon nanotube layer: and manufacturing the carbon nano tube on the cathode simple plane flat electrode and the cathode simple plane bias electrode to form a carbon nano tube layer.
22) And (3) processing the carbon nanotube layer: and post-treating the carbon nano tube layer to improve the electron emission characteristic.
23) Manufacturing a front hard transparent glass plate: and scribing the plane soda-lime glass to form a front hard transparent glass plate.
24) Preparing an anode permeable membrane cushion layer: and etching the tin-indium oxide film layer covered on the surface of the front hard transparent glass plate to form an anode transparent film cushion layer.
25) Preparing an anode adjacent long silver layer: printing silver paste on the non-display area of the front hard transparent glass plate, baking at 192 ℃ for 7.5 minutes, placing the front hard transparent glass plate in a sintering furnace, and sintering at 532 ℃ for 9.5 minutes to form an anode adjacent long silver layer.
26) Manufacturing a thin light-emitting layer: the anode transparent film cushion layer is printed with fluorescent powder and then placed in an oven to be baked for 7.5 minutes at 152 ℃, so that a thin light-emitting layer is formed.
27) Assembling the light-emitting backlight source device: mounting a getter to a non-display area of the front hard transparent glass plate; and then assembling the front hard transparent glass plate, the rear hard transparent glass plate and the glass narrow frame strip together and fixing the glass narrow frame strip by using a clamp.
28) Packaging the light-emitting backlight source device: packaging the assembled light-emitting backlight source device, wherein the packaging process comprises the steps of placing the light-emitting backlight source device into an oven for baking; sintering in a sintering furnace; exhausting and sealing off on an exhaust table; baking the getter on a baking machine; and finally, additionally installing pins to form a finished product.
Claims (8)
1. The utility model provides a separate luminous backlight of cutting oblique bank simple face negative pole interdependent different curved gate control structure which characterized in that: the vacuum sealing body consists of a front hard transparent glass plate, a rear hard transparent glass plate and a glass narrow frame strip; the front hard transparent glass plate is provided with an anode transparent film cushion layer, an anode adjacent long silver layer and a thin light-emitting layer, the anode transparent film cushion layer is connected with the anode adjacent long silver layer, and the thin light-emitting layer is manufactured on the anode transparent film cushion layer; and a staggered oblique ridge profile cathode leaning different-curve gating structure is arranged on the rear hard transparent glass plate.
2. The light-emitting backlight source with the staggered oblique threshold simple-surface cathode-dependent hetero-curved gate control structure as claimed in claim 1, wherein: the substrate of the staggered-cutting oblique ridge simple surface cathode leaning different-curve gating structure is a rear hard transparent glass plate; forming a gray black stop layer by printing the insulating slurry layer on the rear hard transparent glass plate; the printed silver paste layer on the gray black stop layer forms a cathode adjacent long silver layer; forming a cathode dislocation lower layer by the printed insulating slurry layer on the cathode adjacent long silver layer; the lower surface of the cathode dislocation bank lower layer is a circular plane and is positioned on the cathode adjacent long silver layer, the upper surface of the cathode dislocation bank lower layer is a circular plane, the upper surface and the lower surface of the cathode dislocation bank lower layer are parallel to each other, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode dislocation bank lower layer are superposed with each other, the diameter of the upper surface of the cathode dislocation bank lower layer is equal to that of the lower surface, and the outer side surface of the cathode dislocation bank lower layer is a cylindrical surface; square holes are formed in the lower layer of the cathode dislocation bank, and a silver paste layer printed in the square holes forms a cathode interconnection line layer; one layer of the cathode interconnection line is communicated with the cathode adjacent long silver layer; the printed silver paste layer on the upper surface of the lower layer of the cathode dislocation bank forms a cathode interconnection line two layer; the second layer of cathode interconnection lines and the first layer of cathode interconnection lines are communicated with each other; the printed silver paste layer on the upper surface of the lower layer of the cathode dislocation bank forms a cathode plane flat electrode; the cathode simple-surface flat electrode is positioned on the upper surface of the cathode dislocation bank lower layer and is in a hollow circular ring surface shape, and the outer ring edge of the cathode simple-surface flat electrode is flush with the outer edge of the upper surface of the cathode dislocation bank lower layer; the cathode simple plane flat electrode and the cathode interconnection line two layers are communicated with each other; forming a cathode dislocation threshold middle layer by the printed insulating slurry layer on the upper surface of the cathode dislocation threshold lower layer; the lower surface of the cathode dislocation threshold middle layer is a circular plane and is positioned on the upper surface of the cathode dislocation threshold lower layer, the central vertical line of the lower surface of the cathode dislocation threshold middle layer and the central vertical line of the upper surface of the cathode dislocation threshold lower layer are mutually overlapped, the diameter of the lower surface of the cathode dislocation threshold middle layer is equal to the diameter of the inner ring of the cathode simple plane electrode, the upper surface of the cathode dislocation threshold middle layer is a circular plane, the upper surface and the lower surface of the cathode dislocation threshold middle layer are mutually parallel, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode dislocation threshold middle layer are mutually overlapped, the diameter of the upper surface of the cathode dislocation threshold middle layer is smaller than the diameter of the lower surface, the outer side surface of the cathode dislocation threshold middle layer is an inclined slope surface, and the; a square hole is formed in the cathode dislocation bank middle layer, and a silver paste layer printed in the square hole forms three cathode interconnection lines; the three layers of the cathode interconnection lines and one layer of the cathode interconnection lines are communicated with each other; forming four layers of cathode interconnection lines on the printed silver paste layer on the upper surface of the cathode dislocation middle layer; the four layers of the cathode interconnection lines and the three layers of the cathode interconnection lines are communicated with each other; the printed silver paste layer on the outer side surface of the cathode dislocation threshold median layer forms a cathode plane deflection electrode; the cathode simple surface deflection electrode is positioned on the outer side surface of the cathode dislocation threshold middle layer, the upper edge of the cathode simple surface deflection electrode faces the direction of the upper surface of the cathode dislocation threshold middle layer and is flush with the outer edge of the upper surface of the cathode dislocation threshold middle layer, and the lower edge of the cathode simple surface deflection electrode faces the direction of the lower surface of the cathode dislocation threshold middle layer and is not flush with the outer edge of the lower surface of the cathode dislocation threshold middle layer; the cathode simple plane bias electrode and the cathode interconnection line are communicated with each other; forming a cathode false bank covering layer on the printed insulating paste layer on the upper surface of the cathode false bank middle layer; the lower surface of the cathode dislocation threshold covering layer is positioned on the upper surface of the cathode dislocation threshold median layer, and the central vertical line of the lower surface of the cathode dislocation threshold covering layer and the central vertical line of the upper surface of the cathode dislocation threshold median layer are mutually overlapped; the insulating paste layer printed on the gray-black stop layer forms a gate electrode leaning layer; the lower surface of the first layer of gate electrode leaning against the bottom is a plane and is positioned on the gray and black stop layer, a circular hole is formed in the first layer of gate electrode leaning against the bottom, the gray and black stop layer, the cathode adjacent long silver layer, the cathode staggered bank lower layer, the cathode interconnection line layer, the cathode simple surface flat electrode, the cathode staggered bank middle layer, the cathode interconnection line layer, the cathode simple surface bias electrode and the cathode staggered bank covering layer are exposed in the circular hole, and the inner side surface of the circular hole of the first layer of gate electrode leaning against the bottom is an upright cylindrical surface; forming a gate electrode differential-curvature front electrode by the printed silver paste layer on the gate electrode layer; the front end of the gate electrode differential curve front electrode faces the inner side surface direction of the round hole at the bottom layer of the gate electrode, the rear end faces the inner side surface direction of the round hole at the bottom layer of the gate electrode, and the front end of the gate electrode differential curve front electrode is flush with the inner side surface of the round hole at the bottom layer of the gate electrode; the gate electrode leaning bottom layer and the gate electrode differential curve front electrode are printed with insulating slurry layers to form a gate electrode leaning bottom layer; the gate electrode forms a gate electrode differential-curvature rear electrode by depending on the printed silver paste layer on the bottom two layers; the front tail end of the gate electrode differential-curvature rear electrode faces the inner side surface direction of a round hole at the bottom layer of the gate electrode, and the rear tail end faces the inner side surface direction of a round hole at the bottom layer of the gate electrode; the gate electrode differential-curvature rear electrode and the gate electrode differential-curvature front electrode are communicated with each other; the insulating paste layer printed on the gray and black blocking layer forms a gate electrode leaning bottom three layers; forming gate electrode adjacent long silver layers by the printed silver paste layers on the gate electrode bottom three layers; the gate electrode adjacent long silver layer and the gate electrode irregular-curve rear electrode are communicated with each other; the printed insulating slurry layers on the gate electrode differential-curvature front electrode and the gate electrode differential-curvature rear electrode form four layers of gate electrode dependent bottom; the carbon nanotube layer is arranged on the cathode simple plane flat electrode and the cathode simple plane bias electrode.
3. The light-emitting backlight source with the staggered oblique threshold simple-surface cathode-dependent hetero-curved gate control structure as claimed in claim 1, wherein: the substrate of the staggered-cutting oblique ridge simple surface cathode leaning different-curve gating structure is a rear hard transparent glass plate.
4. The light-emitting backlight source with the staggered oblique threshold simple-surface cathode-dependent hetero-curved gate control structure as claimed in claim 1, wherein: the rear hard transparent glass plate is made of borosilicate glass or soda-lime glass.
5. The manufacturing process of the light-emitting backlight source with the staggered oblique threshold simple surface cathode leaning different-curve gating structure as claimed in claim 1, characterized by comprising the following steps:
1) manufacturing a rear hard transparent glass plate: and (4) scribing the plane soda-lime glass to form the rear hard transparent glass plate.
2) Preparing a gray black stop layer: and printing insulating slurry on the rear hard transparent glass plate, and baking and sintering to form a gray black stop layer.
3) Preparing a cathode adjacent long silver layer: and printing silver paste on the gray black plug layer, and baking and sintering to form a cathode adjacent long silver layer.
4) Manufacturing a lower layer of the cathode dislocation: and printing insulating slurry on the adjacent long silver layer of the cathode, and forming a cathode dislocation lower layer after baking and sintering processes.
5) And (3) manufacturing a cathode interconnection line layer: and printing silver paste in the square hole of the lower layer of the cathode dislocation, and forming a cathode interconnection line layer after baking and sintering processes.
6) And (3) manufacturing two layers of cathode interconnection wires: silver paste is printed on the upper surface of the lower layer of the cathode dislocation, and two layers of cathode interconnection lines are formed after baking and sintering processes.
7) Manufacturing a cathode simple plane flat electrode: and printing silver paste on the upper surface of the lower layer of the cathode dislocation, and baking and sintering to form the cathode simple-surface flat electrode.
8) Manufacturing a cathode dislocation ridge middle layer: and printing insulating slurry on the upper surface of the lower layer of the cathode dislocation bank, and forming the middle layer of the cathode dislocation bank after baking and sintering processes.
9) And (3) manufacturing three layers of cathode interconnection wires: and printing silver paste in the square hole of the middle layer of the cathode dislocation bank, and forming three layers of cathode interconnection lines after baking and sintering processes.
10) And (3) manufacturing four layers of cathode interconnection wires: and printing silver paste on the upper surface of the middle layer of the cathode dislocation bank, and baking and sintering to form four layers of cathode interconnection lines.
11) And (3) manufacturing a cathode simple surface offset electrode: and printing silver paste on the outer side surface of the cathode dislocation middle layer, and forming the cathode simple plane offset electrode after baking and sintering processes.
12) Manufacturing a cathode false bank covering layer: and printing insulating slurry on the upper surface of the cathode dislocation sill median layer, and forming a cathode dislocation sill covering layer after baking and sintering processes.
13) Manufacturing a gate electrode at the bottom layer: and printing insulating slurry on the gray black stop layer, and baking and sintering to form a gate electrode dependent bottom layer.
14) Manufacturing a gate electrode different-curvature front electrode: and printing silver paste on the bottom layer of the gate electrode, and baking and sintering to form the gate electrode front electrode with different curvature.
15) Manufacturing a gate electrode-dependent bottom two-layer: and printing insulating slurry on the gate electrode leaning bottom layer and the gate electrode different-curvature front electrode, and baking and sintering to form a gate electrode leaning bottom two layer.
16) Manufacturing a gate electrode different-curvature rear electrode: silver paste is printed on the two layers of the gate electrode leaning bottom, and the gate electrode different-curvature rear electrode is formed after baking and sintering processes.
17) And (3) manufacturing three layers of gate electrodes: and printing insulating slurry on the gray black blocking layer, and baking and sintering to form a gate electrode-dependent bottom three layer.
18) Manufacturing a gate adjacent long silver layer: silver paste is printed on the three layers of the gate electrode leaning bottom, and the gate electrode adjacent long silver layer is formed after baking and sintering processes.
19) Manufacturing four layers of gate electrodes: and printing insulating slurry on the gate electrode differential-curvature front electrode and the gate electrode differential-curvature rear electrode, and baking and sintering to form four layers of gate electrode dependent bottoms.
20) Cleaning of the staggered oblique ridge simple surface cathode leaning different-curve gating structure: and cleaning the surface of the alternate-cutting oblique ridge simple surface cathode leaning different-curve gating structure to remove impurities and dust.
21) Manufacturing a carbon nanotube layer: and manufacturing the carbon nano tube on the cathode simple plane flat electrode and the cathode simple plane bias electrode to form a carbon nano tube layer.
22) And (3) processing the carbon nanotube layer: and post-treating the carbon nano tube layer to improve the electron emission characteristic.
23) Manufacturing a front hard transparent glass plate: and scribing the plane soda-lime glass to form a front hard transparent glass plate.
24) Preparing an anode permeable membrane cushion layer: and etching the tin-indium oxide film layer covered on the surface of the front hard transparent glass plate to form an anode transparent film cushion layer.
25) Preparing an anode adjacent long silver layer: and printing silver paste on the front hard transparent glass plate, and baking and sintering to form an anode adjacent long silver layer.
26) Manufacturing a thin light-emitting layer: and printing fluorescent powder on the anode transparent film cushion layer, and forming a thin light-emitting layer after a baking process.
27) Assembling the light-emitting backlight source device: mounting a getter to a non-display area of the front hard transparent glass plate; and then assembling the front hard transparent glass plate, the rear hard transparent glass plate and the glass narrow frame strip together and fixing the glass narrow frame strip by using a clamp.
28) Packaging the light-emitting backlight source device: and carrying out packaging process on the assembled light-emitting backlight source device to form a finished product.
6. The manufacturing process of the light-emitting backlight source with the staggered oblique threshold simple surface cathode leaning different-curve gating structure as claimed in claim 5, wherein the manufacturing process comprises the following steps: step 25, printing silver paste on the non-display area of the front hard transparent glass plate, and after the baking process, performing the following steps of: 192 ℃, maximum baking temperature holding time: 7.5 minutes; placing the mixture in a sintering furnace for sintering, wherein the maximum sintering temperature is as follows: 532 ℃, maximum sintering temperature holding time: 9.5 minutes.
7. The manufacturing process of the light-emitting backlight source with the staggered oblique threshold simple surface cathode leaning different-curve gating structure as claimed in claim 5, wherein the manufacturing process comprises the following steps: step 26, printing fluorescent powder on the anode transparent film cushion layer, and then placing the anode transparent film cushion layer in an oven for baking, wherein the maximum baking temperature is as follows: 152 ℃, maximum baking temperature hold time: 7.5 minutes.
8. The manufacturing process of the light-emitting backlight source with the staggered oblique threshold simple surface cathode leaning different-curve gating structure as claimed in claim 5, wherein the manufacturing process comprises the following steps: in step 28, the packaging process includes baking the light-emitting backlight device in an oven; sintering in a sintering furnace; exhausting and sealing off on an exhaust table; baking the getter on a baking machine; and finally, additionally installing pins to form a finished product.
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| CN202010387102.9A CN111540655A (en) | 2020-05-09 | 2020-05-09 | Light-emitting backlight source with staggered-cutting oblique ridge simple surface cathode-based different-curvature gate control structure |
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