CN111522055A - Ion signal on-line detection recording system - Google Patents
Ion signal on-line detection recording system Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 claims description 52
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Abstract
The invention relates to an ion signal online detection recording system. The probe recording system includes: the CMOS imaging device comprises a CMOS flat panel detector, a CMOS imaging chip and a mixed pixel detector; the CMOS flat panel detector is arranged in the exit area of low-energy ions, the CMOS imaging chip is arranged in the exit area of medium-energy ions, the hybrid pixel detector is arranged in the exit area of high-energy ions, and the low-energy ions, the medium-energy ions and the high-energy ions are all generated by laser targeting. According to the energy spectrum distribution characteristics of the laser accelerated ion beam, the invention provides a sectional type online detection recording mode, three different detectors are adopted to perform online detection recording on ion signals of low, medium and high energy sections, the online detection recording of the ion signals in a wide energy spectrum range is realized, and the detection sensitivity of high-energy ions can be improved.
Description
Technical Field
The invention relates to the field of plasma physics and nuclear detection, in particular to an ion signal online detection recording system.
Background
In the physical research of intense field laser plasma and the inertial confinement fusion research, the ion species and energy spectrum generated by the interaction of laser and target are a key parameter of the physical process of the relation experiment, and at present, in the experiment, the ion energy spectrum of the Thomson spectrometer is mainly adopted for diagnosis. For recording spectral signals, most of the experiments still use recording media such as imaging plates, CR39, etc. After the experiment is finished, the recording medium needs to be taken out of the vacuum target chamber environment for post-processing to obtain an ion signal, so that the experiment process is greatly influenced. In particular, in recent years, the repetition frequency high-power laser is continuously broken through, and the repetition frequency ion accelerated research is expected to be developed in future experiments, so that the on-line recording of ion signals is urgent. Although the prior art also explores on-line recording of ion signals, for example: imaging using MCP (micro channel plate) or scintillation crystal plus lens plus CCD, but the former requires ultra-high vacuum degree<1.3e-4Pa) therefore requires a special vacuum chamber and vacuum pump, the latter structure is also relatively complex and occupies a relatively large space. Therefore, in order to realize detection in a limited space, a CMOS imaging chip is proposed to be used for detection and recording, but the imaging mode has low sensitivity for detecting high-energy ions, poor signal-to-noise ratio, and even noise can cover signals, so that the high-energy ions cannot be detected, and further the online detection and recording of ion signals in a wide energy spectrum range cannot be realized, so that the online detection and recording of the ion signals in the wide energy spectrum range are designedThe recording system has important significance for diagnosing the energy spectrum in the high repetition frequency ion acceleration experiment.
Disclosure of Invention
The invention aims to provide an ion signal online detection recording system, which provides a sectional type online detection recording mode according to the energy spectrum distribution characteristics of laser accelerated ion beams, adopts three different detectors to perform online detection recording on ion signals of low, medium and high energy sections, realizes the online detection recording of ion signals in a wide energy spectrum range, and can improve the detection sensitivity of high-energy ions.
In order to achieve the purpose, the invention provides the following scheme:
an ion signal on-line detection recording system, comprising: the CMOS imaging device comprises a CMOS flat panel detector, a CMOS imaging chip and a mixed pixel detector;
the CMOS flat panel detector is arranged in an emergent area of low-energy ions and is used for detecting low-energy ion signals; the CMOS imaging chip is arranged in an emergent area of the intermediate energy ions and is used for detecting the intermediate energy ion signals; the mixed pixel detector is arranged in an emergent area of the high-energy ions and is used for detecting high-energy ion signals; the low energy ions, the intermediate energy ions and the high energy ions are all generated by laser targeting.
Optionally, the CMOS flat panel detector includes: the device comprises a first shell, a CMOS chip, an optical fiber panel, a scintillation crystal and a first metal film; the CMOS chip, the optical fiber panel, the scintillation crystal and the first metal film are sequentially arranged in the first shell from bottom to top; the first shell and the first metal film form a closed space; the first metal film is used for receiving the low-energy ions.
Optionally, the CMOS imaging chip includes: the CMOS image sensor comprises a second shell, a CMOS image sensor, a first photosensitive layer and a second metal film; the CMOS image sensor, the first photosensitive layer and the second metal film are sequentially arranged in the second shell from bottom to top, and the first photosensitive layer is connected with the CMOS image sensor; the second metal film and the second shell form a closed space, and the second metal film is used for receiving the intermediate energy ions.
Optionally, the hybrid pixel detector includes: the third shell, a read-out chip, a second photosensitive layer and a third metal film; the reading chip, the second photosensitive layer and the third metal film are sequentially arranged in the third shell from bottom to top, and the second photosensitive layer is connected with the reading chip; the third metal film and the third shell form a closed space, and the third metal film is used for receiving the high-energy ions.
Optionally, the first casing is made of aluminum, lead and polytetrafluoroethylene from inside to outside in sequence.
Optionally, the second housing is made of aluminum, lead and polytetrafluoroethylene from inside to outside in sequence.
Optionally, the third casing is made of aluminum, lead and polytetrafluoroethylene from inside to outside in sequence.
Optionally, the scintillation crystal is a CsI crystal, and the thickness of the CsI crystal is 100 μm to 300 μm.
Optionally, the thickness of the first photosensitive layer is 8 μm to 20 μm.
Optionally, the thickness of the second photosensitive layer is 100 μm to 500 μm.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects: the CMOS flat panel detector, the CMOS imaging chip and the mixed pixel detector are arranged in the same system, the CMOS flat panel detector is used for detecting low-energy ion signals, the CMOS imaging chip is used for detecting medium-energy ion signals, and the mixed pixel detector is used for detecting high-energy ion signals, so that the ion signals of three energy sections, namely high energy sections, medium energy sections and low energy sections can be detected on line at the same time, the CMOS flat panel detector has scintillation crystals to protect the CMOS chip, and the mixed pixel detector is noise-free and has high signal-to-noise ratio to improve the detection sensitivity of high-energy ions.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic structural diagram of an ion signal on-line detection recording system according to the present invention;
FIG. 2 is a schematic diagram of an external structure of the ion signal online detection and recording system of the present invention.
Description of the symbols:
1-scintillation crystal, 2-optical fiber panel, 3-CMOS chip, 4-CMOS image sensor, 5-second photosensitive layer, 6-reading chip, 7-shell, 8-metal film and 9-data line.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide an ion signal online detection recording system. The CMOS flat panel detector, the CMOS imaging chip and the mixed pixel detector are arranged in the same system, the CMOS flat panel detector is used for detecting low-energy ion signals, the CMOS imaging chip is used for detecting medium-energy ion signals, and the mixed pixel detector is used for detecting high-energy ion signals, so that the ion signals of three energy sections, namely high energy sections, medium energy sections and low energy sections can be detected on line at the same time.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
The laser accelerated ion energy spectrum distribution is exponentially attenuated, the low energy yield is high, and the high energy yield is low. After passing through the charged particle spectrometer, the low-energy ions are dispersed greatly, and the high-energy ions are dispersed little, so that the high-energy ions need a detector with higher spatial resolution. As shown in fig. 1, an ion signal online detection recording system includes: CMOS flat panel detectors, CMOS imaging chips, and hybrid pixel detectors.
The CMOS flat panel detector is arranged in an emergent area of low-energy ions and is used for detecting low-energy ion signals; the CMOS imaging chip is arranged in an emergent area of the intermediate energy ions and is used for detecting the intermediate energy ion signals; the mixed pixel detector is arranged in an emergent area of the high-energy ions and is used for detecting high-energy ion signals; the low-energy ions, the medium-energy ions and the high-energy ions are all generated by laser targeting, the high-energy section is low in yield and strong in penetrating power, a single ion can be obtained based on the mixed pixel detector, in addition, the mixed pixel detector is zero in noise, the measurement of the ultra-low yield ions is facilitated, and the signal to noise ratio is higher.
As an optional implementation mode, the ion signal online detection recording system further comprises an external structure; the external structure is used for placing the CMOS flat panel detector, the CMOS imaging chip or the hybrid pixel detector. As shown in fig. 2, the external structure includes a housing 7, a metal film 8 and a data line 9, the metal film is designed to enable the whole detector to be located in a sealed metal cavity, so as to effectively shield the interference of electromagnetic pulses generated by experimental targeting on the detector, and the data line 9 is used for being connected with a controller, so as to realize control and data transmission of the CMOS flat panel detector, the CMOS imaging chip or the hybrid pixel detector. The data line 9 adopts a copper shielding cable, so that the radiation shielding of the whole detector is met.
As an optional implementation, the CMOS flat panel detector includes: the device comprises a first shell, a scintillation crystal 1, an optical fiber panel 2, a CMOS chip 3 and a first metal film; the CMOS chip 3, the optical fiber panel 2, the scintillation crystal 1 and the first metal film are sequentially arranged in the first shell from bottom to top, and the first metal film covers the scintillation crystal 1; the first shell and the first metal film form a closed space; the first metal film is used for receiving the low-energy ions, the low-energy ion range is short, the scintillation crystal 1 and the optical fiber panel 2 are adopted, irradiation of low-energy protons to the CMOS chip 3 can be effectively prevented, the CMOS chip 3 is protected, low-energy ions generated in an experiment penetrate through the first metal film and then are injected into the scintillation crystal 1 to generate visible light signals, and then the visible light is transmitted to the CMOS chip 3 through the optical fiber panel 2 to achieve recording of the low-energy ion signals.
As an alternative embodiment, the CMOS flat panel detector manufactured by DALSA and having the model of the read-o-Box 3K HS can be used.
As an alternative embodiment, the CMOS flat panel detector has an effective size of 11.4cm multiplied by 6.4cm and is used for recording proton signals with energy of 1MeV-8 MeV.
As an alternative embodiment, the CMOS chip 3 has a chip size greater than 2 × 106The saturation threshold value of each electron/pixel, and the chip pixel of the CMOS chip 3 is less than or equal to 50 mu m.
As an alternative embodiment, the chip pixel of the CMOS chip 3 is 49.5 μm.
As an alternative embodiment, the aperture of the optical fiber panel 2 is 5 μm to 20 μm, and the thickness of the optical fiber panel 2 is 1mm to 3 mm.
As an alternative embodiment, the optical fiber panel 2 has an aperture of 6 μm and a thickness of 3 mm.
As an alternative embodiment, the scintillation crystal 1 of the CMOS flat panel detector adopts a CsI crystal, and the thickness of the CsI crystal is 250 μm.
As an alternative embodiment, the scintillation crystal 1 is a CsI crystal, the thickness of which is 100 μm-300 μm.
As an optional implementation, the CMOS imaging chip includes: a second housing, a CMOS image sensor 4, a first photosensitive layer, and a second metal film; the CMOS image sensor 4, the first photosensitive layer and the second metal film are sequentially arranged in the second shell from bottom to top, the first photosensitive layer is connected with the CMOS image sensor 4, and the second metal film covers the first photosensitive layer; the second metal film and the second shell form a closed space, the second metal film is used for receiving the intermediate energy ions, and the intermediate energy ions generated in the experiment penetrate through the second metal film and then are injected into the first photosensitive layer of the CMOS imaging chip to generate an electric signal which is recorded by the CMOS image sensor.
As an alternative embodiment, the CMOS imaging chip may be a RadEye HR CMOS imaging chip manufactured by DALSA, Inc., and may require a thicker photosensitive layer.
As an alternative embodiment, the CMOS imaging chip has an effective size of 6.6cm multiplied by 2.5cm and is used for recording proton signals with energy of 8MeV-30 MeV.
As an optional implementation mode, the chip pixels of the CMOS imaging chip are less than or equal to 20 mu m.
As an alternative embodiment, the chip pixels in the CMOS imaging chip are 20 μm.
In an alternative embodiment, the first photosensitive layer has a thickness of 15 μm.
As an alternative embodiment, the thickness of the first photosensitive layer is 8-20 μm, and the intermediate energy band ions can effectively penetrate through the CMOS chip, so that the yield is medium. The signal intensity of single ion can be improved by thickening the photosensitive layer, and the mode of directly measuring the ion signal can have higher spatial resolution.
As an alternative embodiment, the hybrid pixel detector comprises: a third housing, a readout chip 6, a second photosensitive layer 5, and a third metal film; the readout chip 6, the second photosensitive layer 5 and the third metal film are sequentially arranged in the third housing from bottom to top, the second photosensitive layer 5 and the readout chip 6 (pixelated read-out) are connected through bump-bonds, and the third metal film covers the second photosensitive layer 5; the third metal film and the third shell form a closed space, the third metal film is used for receiving the high-energy ions, and the high-energy ions generated in the experiment penetrate through the third metal film and then are injected into the second photosensitive layer to generate an electric signal which is then amplified and recorded.
As an alternative, the hybrid pixel detector may be fabricated by using standard chips manufactured by ADVACAM, model number Timepix.
As an alternative, the readout chip may be a Timepix chip manufactured by ADVACAM, which requires four standard chip splices.
As an alternative embodiment, the mixed pixel detector has an effective size of 2.8cm × 2.8cm, and is used for recording proton signals with energy of more than 30 MeV.
As an alternative embodiment, the read-out chip 6 has chip pixels ≦ 55 μm.
As an alternative embodiment, the read-out chip 6 has chip pixels of 55 μm.
As an alternative embodiment, the thickness of the second photosensitive layer 5 is 100 μm to 500 μm.
As an alternative embodiment, the second photosensitive layer 5 is Si or CdTe with a thickness of 250 μm.
As an alternative embodiment, the first housing, the second housing and the third housing are identical in structure. The first shell is sequentially made of aluminum, lead and polytetrafluoroethylene from inside to outside, wherein the thickness of the aluminum is 2mm, the thickness of the lead is 5mm, and the thickness of the polytetrafluoroethylene is 5 mm.
As an optional implementation manner, the thicknesses of the first metal film, the second metal film and the third metal film are all 6um, and the materials are all aluminum.
As an optional implementation mode, the CMOS flat panel detector, the CMOS imaging chip and the hybrid pixel detector are arranged in close contact, and ions can be prevented from being omitted from gaps. In addition, the material at the joint of the two detectors needs to be made as thin as possible, so that ions to be diagnosed are not leaked as much as possible.
The embodiment discloses the following technical effects:
(1) the design of the metal sandwich (aluminum, lead and polytetrafluoroethylene in sequence from inside to outside) structure shell can effectively shield the irradiation interference and irradiation damage of electrons, X rays and secondary radiation generated by an experiment to the detector, and the design of the metal film ensures that the whole detector is positioned in a closed metal cavity and can effectively shield the interference of electromagnetic pulses generated by the experiment targeting to the detector.
(2) The laser accelerated ion energy spectrum distribution is exponentially attenuated, the low energy yield is high, and the high energy yield is low. After passing through the charged particle spectrometer, the low-energy ions are dispersed greatly, and the high-energy ions are dispersed little, so that the high-energy ions need a detector with higher spatial resolution. The three detectors are respectively suitable for the on-line recording of ions with three energy sections of low, medium and high.
(3) The CMOS flat panel detector is mainly used for recording low-energy ion signals. The low-energy ion has short range, and the irradiation of low-energy protons to the CMOS chip can be effectively prevented by adopting the scintillation crystal and the optical fiber panel, so that the CMOS chip is protected.
(4) The CMOS imaging chip is mainly used for recording the ion signals of the intermediate energy band. The ions in the middle energy section can effectively penetrate through a CMOS imaging chip, and the yield is medium. Thickening the photosensitive layer can increase the signal intensity of individual ions. The mode of directly measuring ion signals can have higher spatial resolution.
(5) The mixed pixel track detector is mainly used for recording high-energy-band ion signals. The high-energy section has low yield and strong penetrating power, can obtain higher signal intensity of single ions based on the mixed pixel detector, and is beneficial to the measurement of ultra-low yield ions due to zero noise of the mixed pixel detector. With a higher signal-to-noise ratio.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (10)
1. An ion signal on-line detection recording system, comprising: the CMOS imaging device comprises a CMOS flat panel detector, a CMOS imaging chip and a mixed pixel detector;
the CMOS flat panel detector is arranged in an emergent area of low-energy ions and is used for detecting low-energy ion signals; the CMOS imaging chip is arranged in an emergent area of the intermediate energy ions and is used for detecting the intermediate energy ion signals; the mixed pixel detector is arranged in an emergent area of the high-energy ions and is used for detecting high-energy ion signals; the low energy ions, the intermediate energy ions and the high energy ions are all generated by laser targeting.
2. The system of claim 1, wherein the CMOS flat panel detector comprises: the device comprises a first shell, a CMOS chip, an optical fiber panel, a scintillation crystal and a first metal film; the CMOS chip, the optical fiber panel, the scintillation crystal and the first metal film are sequentially arranged in the first shell from bottom to top; the first shell and the first metal film form a closed space; the first metal film is used for receiving the low-energy ions.
3. The system of claim 1, wherein the CMOS imaging chip comprises: the CMOS image sensor comprises a second shell, a CMOS image sensor, a first photosensitive layer and a second metal film; the CMOS image sensor, the first photosensitive layer and the second metal film are sequentially arranged in the second shell from bottom to top, and the first photosensitive layer is connected with the CMOS image sensor; the second metal film and the second shell form a closed space, and the second metal film is used for receiving the intermediate energy ions.
4. An ion signal on-line detection recording system according to claim 1, wherein the hybrid pixel detector comprises: the third shell, a read-out chip, a second photosensitive layer and a third metal film; the reading chip, the second photosensitive layer and the third metal film are sequentially arranged in the third shell from bottom to top, and the second photosensitive layer is connected with the reading chip; the third metal film and the third shell form a closed space, and the third metal film is used for receiving the high-energy ions.
5. The system of claim 2, wherein the first housing is made of aluminum, lead and polytetrafluoroethylene from inside to outside.
6. The system according to claim 3, wherein the second housing is made of aluminum, lead and polytetrafluoroethylene from inside to outside.
7. The system according to claim 4, wherein the third housing is made of aluminum, lead and polytetrafluoroethylene from inside to outside.
8. The system of claim 2, wherein the scintillation crystal is a CsI crystal, and the thickness of the CsI crystal is 100 μm-300 μm.
9. The system of claim 3, wherein the first photosensitive layer has a thickness of 8 μm to 20 μm.
10. The system of claim 4, wherein the thickness of the second photosensitive layer is 100 μm-500 μm.
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