CN111517291A - Transition metal dichalcogenide with stripe structure and preparation method thereof - Google Patents
Transition metal dichalcogenide with stripe structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a transition metal dichalcogenide with a stripe structure and a preparation method thereof. The vanadium diselenide with the stripe structure not only has a sandwich layer structure formed by three layers of atoms of selenium, vanadium and selenium inherent in a single layer of vanadium diselenide, but also is provided with one-dimensional stripes formed by linear selenium vacancies arranged at equal intervals on the surface. According to the invention, under a specific vacuum condition, annealing treatment is carried out on the single-layer vanadium diselenide, partial selenium atoms in the single-layer vanadium diselenide are desorbed to generate selenium vacancy by controlling the technological parameters of the annealing treatment, and the rest selenium is subjected to lattice rearrangement, so that an ordered periodic one-dimensional stripe nano structure is generated on the surface of the single-layer vanadium diselenide, and the one-dimensional stripe nano structure is a reversible structure. The highly ordered and modulatable single-layer vanadium diselenide in-plane one-dimensional stripe structure material provides a new way for realizing two-dimensional material functionalization, and has wide application potential in related research and application aspects of low-dimensional materials, molecular electronics, catalysis and the like.
Description
Technical Field
The invention belongs to the technical field of nano materials, and particularly relates to a transition metal dichalcogenide compound with a stripe structure and a preparation method thereof.
Background
The discovery of graphene, excellent physical properties and great application potential motivate people to explore other two-dimensional materials and structural regulation. With the development and progress of two-dimensional material preparation and application in the last decade, the interest in functionalizing these new two-dimensional materials has begun to be drawn. The realization of the functionalization of the two-dimensional material can greatly change the performance of the material, thereby expanding the application potential of the material. In order to realize the functionalization of the two-dimensional material, an important means is to regulate and control the structure of the two-dimensional material, which requires that the regulated and controlled two-dimensional material has good structural plasticity. One such two-dimensional material is a transition metal dichalcogenide. The chemical formula of a transition metal dichalcogenide is generally represented as MX2Wherein M represents a transition metal element and X represents a chalcogen element (sulfur, selenium and tellurium). The composite material has a unique sandwich layer structure, and one layer of transition metal dichalcogenide is composed of an upper layer of chalcogen element (X), a lower layer of chalcogen element (X) and a middle layer of transition metal element (M). Three layers of atoms in the same layer of transition metal dichalcogenide are bonded with each other and strongly combined, while different layers of transition metal dichalcogenide have van der waals force and weak interaction, so that the transition metal dichalcogenide and the transition metal dichalcogenide are easy to dissociate from each other. This class of materials has a rich set of mechanical, electrical, optical, thermal and chemical properties. It has been found that when these layered compounds are exfoliated from the bulk into several layers or even a single layer, their main physical properties are preserved while some other physical properties are brought about by quantum confinement effects. For example, when the thickness of molybdenum disulfide is reduced from a bulk to a single layer, the electronic structure of the molybdenum disulfide is converted from an indirect band gap to a direct band gap, and the molybdenum disulfide has strong photoluminescence, so that the molybdenum disulfide has a wide application prospect in the aspects of nano electronics and optoelectronics.
Due to the unique sandwich layered structure of the transition metal dichalcogenide, atoms in the layer have stronger structural stability, so that the overall layered structure can still be maintained under the condition that partial atoms are deleted. And transition metal dichalcogenides generally have two configurations, depending on the arrangement of the chalcogen atoms (X): triangular prism type (H type) and octahedral type (T type). These structural plasticity provide a strong modeling space for regulating the structure. In recent years, it has become a hot spot of research to develop a periodic structure on the surface of a two-dimensional transition metal dichalcogenide material, to change its electronic characteristics and to develop new physical properties. Further research on the regulation and control of the periodic structure of the material includes the aspects of controlling the size and the shape of a structural region with a transformation configuration, finding a simpler configuration transformation method, forming an ordered structural region with a pattern shape and the like, and all of the research and the study have great influence on the precise modulation and the application of a two-dimensional nanometer device in the future.
Vanadium diselenide (chemical formula: VSe)2) The two-dimensional transition metal dichalcogenide material is a novel two-dimensional transition metal dichalcogenide material successfully prepared in recent years, has an octahedral (T-shaped) stable configuration proved by theory and experiments, is a magnetic two-dimensional material, and has good electrical conductivity and electrocatalytic properties; the regulation and control of the surface periodic structure of the nano-particles are not reported at present. The research on the regulation and control of the surface periodic structure of the vanadium diselenide two-dimensional material plays an extremely important role in discovering new characteristics of the material, widening the application of the material in the aspects of nano electronics, electrocatalysis and the like and further exploring the configuration transformation mechanism of the two-dimensional transition metal dichalcogenide material.
Disclosure of Invention
It is a first object of the present invention to provide a transition metal dichalcogenide having a striped structure. The one-dimensional nano-stripe structure formed on the surface of the transition metal disulfide compound is a reversible structure.
The second object of the present invention is to provide a method for preparing a transition metal dichalcogenide having a striped structure.
A transition metal dichalcogenide with a stripe structure has a sandwich layered structure formed by three layers of atoms of chalcogen element-transition metal element-chalcogen element inherent in a single-layer transition metal dichalcogenide, and one-dimensional stripes formed by linear chalcogen element vacancies arranged at equal intervals are distributed on the surface of the transition metal dichalcogenide.
Further, the transition metal dichalcogenide is molybdenum diselenide, titanium diselenide, vanadium diselenide, or the like.
Further, the vanadium diselenide with the stripe structure has a sandwich layered structure formed by three layers of atoms of selenium, vanadium and selenium inherent in a single layer of vanadium diselenide, and the surface of the vanadium diselenide is fully distributed with one-dimensional stripes formed by linear selenium vacancies which are arranged at equal intervals.
A preparation method of a transition metal dichalcogenide with a stripe structure comprises the following specific steps:
under the vacuum environment, slowly heating the monolayer transition metal dichalcogenide to 300-500 ℃, keeping for 1-3h, and then slowly cooling to room temperature; so that partial chalcogen elements in the transition metal dichalcogenide are desorbed to generate vacancies, and the rest chalcogen elements are rearranged into lattices, thereby producing an ordered one-dimensional stripe nano structure in the single-layer transition metal dichalcogenide.
Further, a preparation method of vanadium diselenide with a stripe structure comprises the following specific steps: under the vacuum environment, slowly heating the single-layer vanadium diselenide to 270-370 ℃, keeping for 1-2h, and then slowly cooling to room temperature; and desorbing part of selenium in the vanadium diselenide to generate selenium vacancy, and rearranging the rest selenium to form a lattice, so that an ordered one-dimensional stripe nano structure is generated on the surface of the single-layer vanadium diselenide to form the vanadium diselenide with a stripe structure.
Further, the temperature rising speed is 5-15 ℃/min, and further, the temperature rising speed is 10 ℃/min; the cooling speed is naturally reduced to the room temperature, and further, the cooling speed can be controlled at 5 ℃/min. The heating rate is too high, which can cause the periodicity of the generated one-dimensional nano-stripes to be poor; too low a temperature rise rate can result in a one-dimensional striped nanostructure growth process that takes too long.
Further, slowly heating the single-layer vanadium diselenide to 350 ℃ of 300-; further, the temperature is raised to 350 ℃ and kept for 2 h. The heating temperature of the single-layer vanadium diselenide is too high or the heat preservation time is too long, so that the single-layer vanadium diselenide is easy to collapse; the heating temperature is too low or the heat preservation time is too short, although linear selenium vacancies can appear on the surface of the single-layer vanadium diselenide, the selenium vacancies are relatively scattered in arrangement and have different directions and intervals; when the temperature is raised to 350 ℃, the linear selenium vacancy can completely form a one-dimensional stripe nano structure arranged at equal intervals.
Further, the vacuum degree in the vacuum environment is 5 × 10-8Pa-10-7Pa, and further, the vacuum degree under the vacuum environment is 5 × 10-8Pa。
Further, annealing the transition metal disulfide with the one-dimensional stripe nano structure, and simultaneously depositing chalcogen atoms on the transition metal disulfide, wherein the one-dimensional stripe nano structure on the surface of the transition metal disulfide disappears, and the transition metal disulfide with the one-dimensional stripe structure is recovered to the transition metal disulfide of the single layer before treatment.
Further, annealing the vanadium diselenide with the one-dimensional stripe nano structure at 240-265 ℃ for 30-40min, depositing selenium atoms on the vanadium diselenide, enabling the one-dimensional stripe nano structure on the surface of the vanadium diselenide to disappear, and recovering the vanadium diselenide with the one-dimensional stripe nano structure to the single-layer vanadium diselenide before treatment; further, the temperature of the annealing treatment was 250 ℃ and the time of the annealing treatment was 40 min.
Furthermore, the temperature rising speed of the annealing treatment is 10 ℃/min, and the temperature reducing speed is 5 ℃/min.
Further, the period of vanadium diselenide with one-dimensional striped nano-structure is 0.97 nm.
Selenium and vanadium are evaporated onto a surface-graphitized silicon carbide substrate by a physical vapor deposition method.
Further, the single layer vanadium diselenide is prepared by the following method:
1) fixing the polished silicon carbide single crystal wafer on a DC heating sample holder by an electrode, pre-pumping the sample holder through a sample injection cavity, and transferring the sample holder into a sample injection cavity 10-8-10-7In the ultra-high vacuum cavity of Pa, the direct current is supplied to the two ends of the silicon carbide single crystal wafer through the electrodes to addHeating, namely heating the silicon carbide single crystal wafer to 1000-30 s for 1500 ℃, preserving heat for 50-60s, then cooling to 500-600 ℃ in 100-120s, preserving heat for 30-40s, repeatedly circulating the heating and cooling processes, wherein the circulation takes 4min as a period, and after 50 times of circulation, a graphene film is formed on the surface of the silicon carbide single crystal wafer to obtain a silicon carbide substrate with graphene on the surface;
2) heating the silicon carbide substrate to 250-270 ℃ by adopting a resistance-type thermal radiation heating source, preserving the heat for 30min, and then preserving the heat at 10 DEG-8-10-7And in the Pa ultrahigh vacuum environment, heating and depositing vanadium and selenium atoms on the silicon carbide substrate by using an evaporation source to fully mix and react the two atoms, closing the evaporation source after the reaction is finished, keeping the temperature of the silicon carbide substrate for 5min, stopping heating, and naturally cooling to room temperature to obtain the single-layer vanadium diselenide.
Because the sublimation point of selenium is lower than that of vanadium, the invention carries out annealing treatment on the single-layer vanadium diselenide under the specific vacuum condition, partial selenium atoms in the single-layer vanadium diselenide are desorbed to generate selenium vacancy by controlling the technological parameters of the annealing treatment, and the rest selenium carries out crystal lattice rearrangement, thereby generating an ordered periodic one-dimensional stripe nano structure on the surface of the single-layer vanadium diselenide. The one-dimensional stripe nano structure is a reversible structure, vanadium diselenide with a stripe structure is heated to a proper temperature, and selenium atoms are deposited on the vanadium diselenide, so that the one-dimensional stripe nano structure indicated by the vanadium diselenide can be eliminated, and the vanadium diselenide with the stripe structure is changed back to the original single-layer vanadium diselenide.
It is further noted that any range recited herein includes the endpoints and any values therebetween and any subranges subsumed therein or any values therebetween unless otherwise specified.
The invention has the following beneficial effects:
in the invention, in a vacuum environment, annealing treatment is carried out on a single-layer transition metal disulfide to a specific temperature, and partial chalcogen elements in a sample are desorbed by controlling the annealing treatment process, so that an ordered one-dimensional stripe nanostructure is generated in the single-layer transition metal disulfide film material and is a reversible structure. The highly ordered and modulatable single-layer transition metal disulfide in-plane one-dimensional stripe structure material provides a new way for realizing two-dimensional material functionalization, and has wide application potential in related research and application aspects of low-dimensional materials, molecular electronics, catalysis and the like.
Drawings
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
FIG. 1, (a) shows a scanning tunneling microscope image of a single layer of vanadium diselenide thin film material grown on a surface-graphitized silicon carbide substrate in the present invention at about 70% coverage, and (b) is a partial magnified view of FIG. (a).
Fig. 2, (a) shows a scanning tunneling microscope image of vanadium diselenide having one-dimensional striped nanostructures formed after annealing treatment in the present invention, (b) is a partial magnified view of the image (a), (c) is a structural model diagram of vanadium diselenide having one-dimensional striped nanostructures, and (d) is a top view and a plan view of the structural model.
Fig. 3, (a) shows a large-area scanning tunneling microscope image of a single-layer vanadium diselenide in-plane one-dimensional striped nanostructure material in the present invention, (b) is a partial magnified view of the image (a), (c) is a single-layer vanadium diselenide in-plane one-dimensional striped nanostructure material low-energy electron diffraction pattern, and (d) is a fourier transform of its atomic structure.
Fig. 4, (a), (b), (c) and (d) show scanning tunneling microscope images of samples after annealing at different temperatures and selenium deposition on the same single layer vanadium diselenide thin film material sample.
Fig. 5 shows the reversible change process of vanadium diselenide with a striped structure.
Detailed Description
In order to more clearly illustrate the invention, the invention is further described below with reference to preferred embodiments and the accompanying drawings. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and is not to be taken as limiting the scope of the invention.
Examples
The vanadium diselenide with a stripe structure has a sandwich layered structure formed by three layers of atoms of selenium, vanadium and selenium inherent in a single layer of vanadium diselenide, and one-dimensional stripes formed by linear selenium vacancies which are arranged at equal intervals are distributed on the surface of the vanadium diselenide, wherein the interval is 0.97 nm.
A preparation method of vanadium diselenide with a stripe structure comprises the following specific steps
Firstly, mounting a finished silicon carbide single crystal wafer (nitrogen-doped, resistivity of 0.02-0.10 omega ∙ cm) with a polished crystal face of 0.5mm × 2mm × 10mm on a direct-current heating sample rack, fixing two ends of the silicon carbide single crystal wafer on the direct-current heating sample rack by electrodes, pre-pumping the direct-current heating sample rack with the silicon carbide single crystal wafer through a sample injection cavity, and then transferring the direct-current heating sample rack into 5 × 10mm-8Pa, and inserting the electrode into a heating table capable of electrifying the electrode. Electrifying direct current to two ends of the silicon carbide single crystal wafer through an electrode to heat the silicon carbide single crystal wafer, heating the silicon carbide single crystal wafer to 1000 ℃ within 20s, preserving heat for 60s, then cooling to 500 ℃ within 120s, preserving heat for 40s, repeatedly circulating the heating and cooling processes, taking 4min as a period, and forming a graphene film on the surface of the silicon carbide single crystal wafer after circulating for 50 times to obtain a silicon carbide substrate with graphene on the surface;
step two, at 5 × 10-8Preheating an evaporation source filled with high-purity vanadium and selenium to generate a proper beam current (the vanadium beam current is about 4 × 10) under the Pa ultrahigh vacuum environment-10kg/m2∙ s, the selenium beam is about one magnitude higher than vanadium, and the beam size is controlled by the current and voltage of the evaporation source), and the evaporation source baffle is kept closed all the time in the process. Simultaneously, a resistance type heat radiation heating source is used for heating the graphene-based silicon carbide substrate to 250-270 ℃, the temperature is kept for 30min, and then a baffle plate of an evaporation source is opened to deposit vanadium and selenium atoms on the heated substrate. The two atoms generate thermal motion under the action of the substrate temperature, and the retention degree of the deposited atoms is too low due to the fact that the temperature is not too high, so that the two atoms can be fully mixed and react to generate a single-layer vanadium diselenide thin film material. After the deposition is finished, the two evaporation sources are closed firstly, and then the substrate is keptStopping heating after the bottom temperature is about 5min, and naturally cooling to room temperature within 30min to obtain the single-layer vanadium diselenide.
Step three: heating the single-layer vanadium diselenide to 350 ℃ at a speed of 10 ℃/min by adopting a resistance type thermal radiation heating source, preserving heat for 2h, and then cooling to room temperature at a speed of 5 ℃/min; and desorbing part of selenium in the sample to generate selenium vacancy and rearranging the crystal lattice, so that an ordered one-dimensional stripe nano structure is generated in the single-layer vanadium diselenide thin film material to form the vanadium diselenide with a stripe structure.
Step four: heating vanadium diselenide with a stripe structure to 250 ℃, and depositing selenium atoms on the vanadium diselenide at the same time can eliminate the one-dimensional stripe nano structure on the surface of the vanadium diselenide, so that the vanadium diselenide with the stripe structure is changed back to the original single-layer vanadium diselenide, as shown in fig. 5.
The coverage of the single-layer vanadium diselenide on the surface of the graphene-based silicon carbide substrate can be regulated and controlled by deposition time and beam current, for example, the single-layer vanadium diselenide in-plane one-dimensional stripe nano-structure material with the coverage close to a full layer and perfect lattice consistency can be obtained by depositing for about 40min under the size of the beam current.
As shown in fig. 1, scanning tunneling microscope images of a single layer of vanadium diselenide at 70% coverage of the graphene-based silicon carbide substrate surface; from fig. 1(a) it can be seen that the growth of individual single-layer islands has expanded to interconnect; and as shown in the enlarged view of fig. 1(b), the junction has good lattice continuity on both sides. Indicating that the single layer vanadium diselenide material has a high degree of lattice uniformity as a whole when grown to a full layer.
As shown in fig. 2, fig. 2(a) is a scanning tunneling microscope image of vanadium diselenide with one-dimensional stripe nano-structure generated after annealing a single layer of vanadium diselenide at 350 ℃ for 2 hours; FIG. 2(b) is a partial enlarged view of FIG. 2 (a); from figure (d) it can be seen that the one-dimensional striped nanostructure consists of equally spaced linear selenium vacancies with rectangular protocells with lattice constants along the major and minor axes of 0.97nm and 0.34nm, respectively.
Because the single layer of vanadium diselenide has six-fold symmetry, the one-dimensional stripe nanostructure on the surface of the vanadium diselenide has three crystal domains which form a rotation angle of 60 degrees with each other, for example, three domains marked by numbers 1, 2 and 3 are shown in fig. 3(a) and 3(b), and an included angle of 60 degrees is formed between the visible domains and the domains at the boundary of the three domains. The low energy electron diffraction pattern of FIG. 3(c) further demonstrates the large area presence of the three domains, and the three diffraction lattice sets, each of which can correspond to the Fourier transform plot of FIG. 3 (d); while the fourier transform in fig. 3(d) is from the real space STM atomic resolution image of the one-dimensional striped nanostructure of fig. 2 (b). Since the fourier transform converts the real space image into the inverse lattice of the inverse space, and the low-energy electron diffraction pattern reflects exactly the inverse lattice arrangement of the crystal lattice of the whole sample, the one-to-one correspondence between the two indicates that the three groups of diffraction points in fig. 3(c) indeed come from the one-dimensional fringe nanostructure in the sample, and have only three orientations as a whole.
As shown in fig. 4, the same single-layer vanadium diselenide sample was subjected to annealing treatment at different temperatures and a scanning tunneling microscope image of the sample after selenium deposition. When the single layer vanadium diselenide shown in fig. 4(a) is annealed to 270 c, linear selenium vacancies begin to appear on the surface, as shown in fig. 4(b), where the selenium vacancies are also relatively randomly arranged, with different orientations and spacings. When the annealing temperature of the sample was increased to 330 ℃, the linear selenium vacancies started to form domains with the same orientation, as shown in fig. 4(c), but their spacing was still not uniform. And when annealing to 350 ℃, the linear selenium vacancies completely form one-dimensional striped nanostructures arranged at equal intervals, as shown in fig. 4 (d). On the other hand, if a sample that is completely converted into one-dimensional striped nanostructures is maintained at a temperature of 250 ℃ while depositing selenium atoms thereon, these striped nanostructures can be eliminated and the sample converted back to the original single layer of vanadium diselenide. The series of continuous experiments show the mechanism and reversibility of the transformation of generating the one-dimensional stripe nano structure on the surface of the single-layer vanadium diselenide thin film material.
Note that the one-dimensional striped monolayer vanadium diselenide and the one-dimensional striped nanostructure vanadium diselenide appearing in the specification and the drawings both refer to vanadium diselenide having a striped structure.
Although the present invention has been described in detail, various changes may be made to the respective conditions without departing from the gist of the present invention. It is to be understood that the invention is not limited to the embodiments described above, but is to be accorded the scope of the appended claims, including equivalents of each element described. For example, vanadium diselenide having a stripe structure, which is equivalent to the above embodiment, can also be obtained by depositing selenium and vanadium atoms onto a graphite substrate by electron beam evaporation and heating and annealing; the selenium atoms on the upper layer of the single-layer vanadium diselenide material are desorbed by an electron beam or laser beam method to form selenium vacancies, and the single-layer vanadium diselenide material can be converted into the vanadium diselenide with a stripe structure. It is not intended to be exhaustive or to limit all embodiments to the precise form disclosed, and all obvious modifications and variations are possible within the scope of the invention.
Claims (10)
1. A transition metal dichalcogenide with a stripe structure is characterized by having a sandwich layered structure formed by three layers of atoms of chalcogen element-transition metal element-chalcogen element inherent in a single-layer transition metal dichalcogenide, and one-dimensional stripes formed by linear chalcogen element vacancies arranged at equal intervals are distributed on the surface.
2. The transition metal dichalcogenide having a striated structure as set forth in claim 1, wherein the transition metal dichalcogenide has a sandwich layered structure of three atoms of selenium, vanadium and selenium inherent to a single layer of vanadium diselenide, and the surface of the sandwich layered structure is covered with one-dimensional striations formed by an equidistant arrangement of linear selenium vacancies.
3. A process for producing a transition metal dichalcogenide having a striped structure according to claim 1,
under the vacuum environment, slowly heating the monolayer transition metal dichalcogenide to 300-500 ℃, keeping for 1-3h, and then slowly cooling to room temperature; so that partial chalcogen elements in the transition metal dichalcogenide are desorbed to generate vacancies, and the rest chalcogen elements are rearranged into lattices, thereby producing an ordered one-dimensional stripe nano structure in the single-layer transition metal dichalcogenide.
4. The preparation method according to claim 3, wherein in the vacuum environment, the temperature of the single layer of vanadium diselenide is slowly raised to 270-370 ℃, kept for 1-2h, and then slowly lowered to room temperature; and desorbing part of selenium in the vanadium diselenide to generate selenium vacancy, and rearranging the rest selenium to form a lattice, so that an ordered one-dimensional stripe nano structure is generated on the surface of the single-layer vanadium diselenide to form the vanadium diselenide with a stripe structure.
5. The method according to claim 4, wherein the temperature raising rate is 5-15 ℃/min, preferably 10 ℃/min; and naturally cooling to room temperature.
6. The method according to claim 4, wherein the temperature of the single layer vanadium diselenide is slowly raised to 350 ℃ at 300-; preferably, the temperature is raised to 350 ℃ for 2 h.
7. The method according to claim 4, wherein the vacuum degree in the vacuum environment is 5 × 10- 8Pa-10-7Pa。
8. The preparation method according to claim 4, wherein the vanadium diselenide with the one-dimensional stripe nanostructure is annealed at 240-265 ℃ for 30-40min, and selenium atoms are deposited on the vanadium diselenide, so that the one-dimensional stripe nanostructure on the surface of the vanadium diselenide disappears, and the vanadium diselenide with the one-dimensional stripe nanostructure is recovered to be the single layer of vanadium diselenide before the treatment.
9. The method of claim 4, wherein the vanadium diselenide having a one-dimensional striped nanostructure has a period of 0.97 nm.
10. The method of claim 4, wherein the single layer of vanadium diselenide is prepared by:
1) fixing the polished silicon carbide single crystal wafer on a DC heating sample holder by an electrode, pre-pumping the sample holder through a sample injection cavity, and transferring the sample holder into a sample injection cavity 10-8-10-7In an ultrahigh vacuum cavity of Pa, introducing direct current to two ends of a silicon carbide single chip through electrodes to heat the silicon carbide single chip, heating the silicon carbide single chip to 1500 ℃ in 20-30s, preserving the heat for 50-60s, then cooling to 600 ℃ in 120s in 500 s, preserving the heat for 30-40s, repeatedly circulating the heating and cooling processes, wherein the circulation takes 4min as a period, and forming a graphene film on the surface of the silicon carbide single chip after circulating for 50 times to obtain a silicon carbide substrate with graphene on the surface;
2) heating the silicon carbide substrate to 250-270 ℃ by adopting a resistance-type thermal radiation heating source, preserving the heat for 30min, and then preserving the heat at 10 DEG-8-10-7And in the Pa ultrahigh vacuum environment, heating and depositing vanadium and selenium atoms on the silicon carbide substrate by using an evaporation source to fully mix and react the two atoms, closing the evaporation source after the reaction is finished, keeping the temperature of the silicon carbide substrate for 5min, stopping heating, and naturally cooling to room temperature to obtain the single-layer vanadium diselenide.
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