CN111509120A - Magnetic tunnel junction and method of manufacturing the same - Google Patents
Magnetic tunnel junction and method of manufacturing the same Download PDFInfo
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- CN111509120A CN111509120A CN202010319852.2A CN202010319852A CN111509120A CN 111509120 A CN111509120 A CN 111509120A CN 202010319852 A CN202010319852 A CN 202010319852A CN 111509120 A CN111509120 A CN 111509120A
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 128
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims abstract description 19
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910001120 nichrome Inorganic materials 0.000 claims abstract description 9
- 229910052742 iron Inorganic materials 0.000 claims abstract description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 4
- 229910052796 boron Inorganic materials 0.000 claims abstract description 4
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 4
- 239000010941 cobalt Substances 0.000 claims abstract description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims abstract description 3
- 229910019236 CoFeB Inorganic materials 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 18
- 230000005415 magnetization Effects 0.000 claims description 13
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 12
- 125000006850 spacer group Chemical group 0.000 claims description 8
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- -1 CoB Chemical compound 0.000 description 1
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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Abstract
The invention provides a magnetic tunnel junction and a method of manufacturing the same. The magnetic tunnel junction comprises a first seed layer, a second seed layer, a magnetic fixed layer, a barrier layer, a magnetic free layer and a covering layer which are sequentially stacked, wherein the first seed layer comprises a non-nickel alloy formed by one or a combination of cobalt and iron and boron, and the second seed layer comprises a nickel-chromium alloy. The invention utilizes a second seed layer comprising nichrome to increase the perpendicular magnetic anisotropy of the magnetic layers.
Description
Technical Field
The present invention relates to the field of magnetic memory technology, and more particularly, to a magnetic tunnel junction and a method of fabricating the same.
Background
In recent years, Magnetic Random Access memories (mram) have been made by using the characteristics of Magnetic Tunnel Junction (MTJ). MRAM is a new type of solid state non-volatile memory that has high speed read and write characteristics. Ferromagnetic MTJs are typically sandwich structures with a free layer that can change the magnetization direction to record different data; an insulating barrier layer in between; and a reference layer on the other side of the barrier layer, the magnetization direction of which is unchanged. When the magnetization vector directions between the free layer and the reference layer are parallel or antiparallel, the resistance state of the MTJ element is also correspondingly a low resistance state or a high resistance state, respectively. The stored information is obtained by measuring the resistance state of the MTJ element in this way.
A vertical Magnetic Tunnel Junction (pMTJ), that is, a Magnetic Tunnel Junction whose Magnetic moment is Perpendicular to a surface of a substrate, is divided into a top type (reference layer on top) and a bottom type (reference layer on bottom) pMTJ according to relative positions of a reference layer and a free layer. In the pMTJ structure, since Perpendicular Magnetic Anisotropy (PMA) of two Magnetic layers is relatively strong (irrespective of shape Anisotropy), the easy magnetization directions thereof are Perpendicular to the layer surface. Under the same conditions, the size of the pMTJ element can be made smaller than that of the in-plane type MTJ element, the magnetic polarization error of the easy magnetization direction can be made small, and the reduction in the size of the MTJ element allows the required switching current to be reduced accordingly.
Therefore, the vertical magnetic tunnel junction pMTJ using PMA has high thermal stability and low switching current, and in practical applications, how to improve PMA of each magnetic layer in the pMTJ and provide a flat substrate for the pMTJ becomes a problem to be solved urgently.
Disclosure of Invention
Accordingly, the present invention provides a magnetic tunnel junction and a method for manufacturing the same, which can improve perpendicular magnetic anisotropy of each magnetic layer.
In a first aspect, the present invention provides a magnetic tunnel junction comprising a first seed layer, a second seed layer, a magnetic pinned layer, a barrier layer, a magnetic free layer, and a capping layer, which are sequentially stacked, wherein,
the first seed layer comprises a non-nickel alloy of boron and one or a combination of cobalt, iron, for providing a flat and lattice-matched base for the second seed layer;
the second seed layer is located on a top surface of the first seed layer and comprises a nickel-chromium alloy;
the magnetic fixed layer is adjacent to the second seed layer, and the magnetization direction of the magnetic fixed layer is unchanged and is vertical to the surface of the magnetic fixed layer film;
the magnetization direction of the magnetic free layer is variable and is vertical to the surface of the magnetic free layer film;
the barrier layer is positioned between the magnetic fixed layer and the magnetic free layer;
the cover layer is located on the top surface of the magnetic free layer and used for protecting the magnetic free layer.
Optionally, the material of the first seed layer comprises one or more of CoB, FeB and CoFeB.
Optionally, the material of the second seed layer comprises one or more of NiCr and NiFeCr.
Optionally, the first seed layer has a thickness between 1-5 nanometers.
Optionally, the second seed layer has a thickness of between 1 and 10 nanometers.
Optionally, the magnetic pinned layers include a synthetic antiferromagnetic pinning layer, a magnetic spacer layer, and a magnetic reference layer, wherein,
the synthetic antiferromagnetic pinning layer adopts a structure of [ Co/X ] n/Co/Y/Co/[ X/Co ] m, wherein X is one of Ni, Pd or Pt, the thickness of X is 0.2-1.0 nm, Y is one of Ru or Ir, the thickness of Y is 0.4-0.9 nm, n and m are superlattice layers, n is 3-8 layers, and m is 0-6 layers;
the magnetic reference layer comprises various combinations of CoFeB, and is of an amorphous structure before annealing and is converted into a body-centered cubic lattice structure after annealing;
the magnetic spacing layer is made of one of Ta, W, Mo, Hf, V, Zr and alloy thereof.
Optionally, the barrier layer adopts MgO, MgZnO or MgAlO, and the thickness of the barrier layer is between 0.5 and 2 nanometers.
Optionally, the magnetic free layer is CoFeB, CoFeB/Fe or CoFeB/β/CoFeB, wherein β is one of Ta, Mo, W, Hf, Zr or Fe, the thickness of the magnetic free layer is 0.5-5 nanometers, and the magnetic free layer is converted from an amorphous structure to a body-centered cubic lattice structure after annealing.
Optionally, the covering layer is made of an oxide of at least one of Mg and Al, and the thickness of the covering layer is between 0.2 and 2 nanometers.
In a second aspect, the present invention provides a method for manufacturing a magnetic tunnel junction, comprising the steps of:
depositing a first seed layer on a substrate;
depositing a second seed layer on the first seed layer;
forming a synthetic antiferromagnetic pinning layer on the second seed layer;
forming a magnetic spacer layer on the synthetic antiferromagnetic pinning layer;
forming a magnetic reference layer on the magnetic spacer layer;
forming a barrier layer on the magnetic reference layer;
forming a magnetic free layer on the barrier layer;
forming a capping layer on the magnetic free layer, thereby forming a magnetic tunnel junction multilayer film;
annealing is carried out after the magnetic tunnel junction multilayer film is formed, wherein the annealing temperature is 300-450 ℃, and the annealing time is 0.2-2 hours.
The invention provides a magnetic tunnel junction and a manufacturing method thereof.A NiCr seed crystal layer is deposited on a cobalt-iron-boron seed crystal layer by utilizing two seed crystal layers, and NiCr is diffused into a magnetic fixed layer, so that the magnetic moment direction of the magnetic fixed layer is more vertical and more stable; the stable magnetic fixed layer can ensure that the magnetic free layer is more stable to overturn and the R-H loop has better uniformity.
Drawings
FIG. 1 is a schematic diagram of a magnetic tunnel junction according to an embodiment of the present invention;
fig. 2 is a process flow diagram of a method for fabricating a magnetic tunnel junction according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The present embodiment provides a magnetic tunnel junction, as shown in fig. 1, including: a first seed layer 10, a second seed layer 20, a magnetic fixed layer 30, a barrier layer 40, a magnetic free layer 50, and a capping layer 60 are sequentially stacked.
The first seed layer 10 is a non-nickel alloy comprising one or a combination of cobalt and iron with boron, such as CoB, FeB, CoFeB, etc., in a thickness range of 1-5 nanometers, and the first seed layer 10 provides a flat and lattice-matched base for the second seed layer 20.
The second seed layer 20 is made of a material containing nichrome, such as NiCr, NiFeCr, or the like, and has a thickness in the range of 1 to 10 nm.
The magnetization direction of the magnetic pinned layer 30 is constant and perpendicular to the surface of the magnetic pinned layer film, and sequentially includes:
the first superlattice multilayer film 301 has a structure of [ Co/X ] n, wherein the thickness of Co is generally 0.3-0.6 nm, X is Ni, Pd or Pt and is generally 0.2-1.0 nm, and n is generally 3-8;
a first Co layer 302, typically 0.4-0.6 nm thick;
the AP coupling layer 303 is generally made of Ru or Ir and has the thickness of 0.4-0.9 nm;
a second Co layer 304, typically 0.4-0.6 nm thick;
a second superlattice multilayer film 305 having a structure of [ X/Co ] m, wherein Co is typically 0.3-0.6 nm thick, X is Ni, Pd or Pt is typically 0.2-1.0 nm thick, and m is typically selected from 0-6;
the magnetic spacing layer 306 is made of one of Ta, W, Mo, Hf, V, Zr and alloy thereof, and the thickness is generally 0.2-0.5 nm;
the magnetic reference layer 307, comprising various combinations of CoFeB, is typically 0.5-1.5 nanometers thick. The magnetic reference layer 307 is amorphous before annealing and transforms into a Body Centered Cubic (BCC) lattice structure after annealing.
Wherein the first superlattice multilayer film 301, the first Co layer 302, the AP coupling layer 303, the second Co layer 304, and the second superlattice multilayer film 305 together constitute a Synthetic Antiferromagnetic (SAF) pinning layer for pinning a magnetization direction of the magnetic reference layer 307.
The barrier layer 40 is made of dielectric insulating material, such as oxide insulating material selected from MgO, MgZnO, MgAlO, etc., and preferably has a thickness in the range of 0.5 to 2 nm.
The magnetization direction of the magnetic free layer 50 is variable and perpendicular to the surface of the magnetic free layer film using CoFeB, CoFeB/Fe or CoFeB/β/CoFeB, wherein β is one of Ta, Mo, W, Hf, Zr or Fe, preferably with a thickness in the range of 0.5-5 nm, the magnetic free layer 50 is amorphous before annealing and after annealing is transformed into a Body Centered Cubic (BCC) lattice structure.
The covering layer 60 is made of at least one oxide of Mg and Al, such as MgO and MgAlO, and the thickness of the covering layer 60 is 0.2-2 nm.
The above-mentioned embodiment obtains the magnetic tunnel junction multilayer film, and finally, the formed magnetic tunnel junction multilayer film is annealed at a high temperature ranging from 300 ℃ to 450 ℃ to convert amorphous CoFeB in the magnetic reference layer 307 and the magnetic free layer 50 into a Body Centered Cubic (BCC) lattice structure. In the above embodiment, the first seed layer 10 cannot be too thick, and if the first seed layer 10 is too thick, it will cause the magnetism to be too strong and become in-plane, affecting the magnetization direction of the magnetic pinned layer 30; the second seed layer 20 cannot be too thin, and if the second seed layer 20 is too thin, it loses its function as a stress buffer layer and cannot provide a flat base for the magnetic pinned layer 30, but both the first seed layer 10 and the second seed layer 20 do not have certain relative thickness requirements.
In the magnetic tunnel junction provided in this embodiment, a NiCr seed layer is deposited on the cofeb seed layer using two seed layers, and NiCr diffuses into the first superlattice multilayer film (e.g., Co/Pt), resulting in an elastic stress due to lattice mismatch, which provides the first superlattice with stronger PMA; after stronger PMA is coupled through SAF, the magnetic moment direction of the magnetic reference layer is more vertical and more stable; the stable magnetic reference layer can ensure that the free layer is more stable to overturn and the R-H loop uniformity is better.
Further, another embodiment of the present invention provides a method for manufacturing a magnetic tunnel junction, which is used for manufacturing the magnetic tunnel junction of the above embodiments, and fig. 2 shows the whole process flow of the manufacturing method, specifically including the following steps:
depositing a first seed layer on a substrate;
depositing a second seed layer on the first seed layer;
forming a synthetic antiferromagnetic pinning layer on the second seed layer, wherein the synthetic antiferromagnetic pinning layer is of a composite superlattice multilayer film structure;
forming a magnetic spacer layer on the synthetic antiferromagnetic pinning layer;
forming a magnetic reference layer on the magnetic spacer layer;
forming a barrier layer on the magnetic reference layer;
forming a magnetic free layer on the barrier layer;
forming a capping layer on the magnetic free layer, thereby forming a magnetic tunnel junction multilayer film;
annealing is carried out after the magnetic tunnel junction multilayer film is formed, wherein the annealing temperature is 300-450 ℃, and the annealing time is 0.2-2 hours.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A magnetic tunnel junction comprising a first seed layer, a second seed layer, a magnetic pinned layer, a barrier layer, a magnetic free layer and a capping layer, which are sequentially stacked, wherein,
the first seed layer comprises a non-nickel alloy of boron and one or a combination of cobalt, iron, for providing a flat and lattice-matched base for the second seed layer;
the second seed layer is located on a top surface of the first seed layer and comprises a nickel-chromium alloy;
the magnetic fixed layer is adjacent to the second seed layer, and the magnetization direction of the magnetic fixed layer is unchanged and is vertical to the surface of the magnetic fixed layer film;
the magnetization direction of the magnetic free layer is variable and is vertical to the surface of the magnetic free layer film;
the barrier layer is positioned between the magnetic fixed layer and the magnetic free layer;
the capping layer is located on a top surface of the magnetic free layer.
2. The magnetic tunnel junction of claim 1 wherein the material of the first seed layer comprises one or more of CoB, FeB and CoFeB.
3. The magnetic tunnel junction of claim 1 wherein the material of the second seed layer comprises one or more of NiCr and NiFeCr.
4. The magnetic tunnel junction of claim 1 wherein the first seed layer has a thickness between 1-5 nanometers.
5. The magnetic tunnel junction of claim 1 wherein the second seed layer has a thickness between 1 and 10 nanometers.
6. The magnetic tunnel junction of claim 1 wherein the magnetic pinned layer comprises a synthetic antiferromagnetic pinning layer, a magnetic spacer layer and a magnetic reference layer,
the synthetic antiferromagnetic pinning layer adopts a structure of [ Co/X ] n/Co/Y/Co/[ X/Co ] m, wherein X is one of Ni, Pd or Pt, the thickness of X is 0.2-1.0 nm, Y is one of Ru or Ir, the thickness of Y is 0.4-0.9 nm, n and m are superlattice layers, n is 3-8 layers, and m is 0-6 layers;
the magnetic reference layer comprises various combinations of CoFeB, and is of an amorphous structure before annealing and is converted into a body-centered cubic lattice structure after annealing;
the magnetic spacing layer is made of one of Ta, W, Mo, Hf, V, Zr and alloy thereof.
7. The magnetic tunnel junction of claim 1 wherein the barrier layer is MgO, MgZnO or MgAlO, and the barrier layer has a thickness of 0.5-2 nm.
8. The magnetic tunnel junction of claim 1 wherein the magnetic free layer is CoFeB, CoFeB/Fe or CoFeB/β/CoFeB, wherein β is one of Ta, Mo, W, Hf, Zr or Fe, the thickness of the magnetic free layer is between 0.5-5 nm, and the magnetic free layer is annealed to transform from an amorphous structure to a body-centered cubic lattice structure.
9. The magnetic tunnel junction of claim 1 wherein the capping layer is an oxide of at least one of Mg and Al, and the capping layer has a thickness of 0.2-2 nm.
10. A method of fabricating a magnetic tunnel junction, comprising the steps of:
depositing a first seed layer on a substrate;
depositing a second seed layer on the first seed layer;
forming a synthetic antiferromagnetic pinning layer on the second seed layer;
forming a magnetic spacer layer on the synthetic antiferromagnetic pinning layer;
forming a magnetic reference layer on the magnetic spacer layer;
forming a barrier layer on the magnetic reference layer;
forming a magnetic free layer on the barrier layer;
forming a capping layer on the magnetic free layer, thereby forming a magnetic tunnel junction multilayer film;
annealing is carried out after the magnetic tunnel junction multilayer film is formed, wherein the annealing temperature is 300-450 ℃, and the annealing time is 0.2-2 hours.
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| CN202010319852.2A CN111509120A (en) | 2020-04-21 | 2020-04-21 | Magnetic tunnel junction and method of manufacturing the same |
| PCT/CN2020/121892 WO2021212780A1 (en) | 2020-04-21 | 2020-10-19 | Magnetic tunnel junction and manufacturing method therefor |
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Cited By (2)
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| WO2021212780A1 (en) * | 2020-04-21 | 2021-10-28 | 浙江驰拓科技有限公司 | Magnetic tunnel junction and manufacturing method therefor |
| CN114335329A (en) * | 2022-03-16 | 2022-04-12 | 波平方科技(杭州)有限公司 | Magnetic random access memory with high magnetic field interference resistance |
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- 2020-04-21 CN CN202010319852.2A patent/CN111509120A/en active Pending
- 2020-10-19 WO PCT/CN2020/121892 patent/WO2021212780A1/en active Application Filing
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Application publication date: 20200807 |
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