CN111490066B

CN111490066B - Display panel and electronic device

Info

Publication number: CN111490066B
Application number: CN201910079463.4A
Authority: CN
Inventors: 向明; 彭宁昆; 胡俊艳
Original assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Current assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date: 2019-01-28
Filing date: 2019-01-28
Publication date: 2022-06-07
Anticipated expiration: 2039-01-28
Also published as: CN111490066A

Abstract

The invention discloses a display panel and an electronic device, wherein the display panel is provided with an optical sensor area, the optical sensor area corresponds to an optical sensor, and the display panel comprises a plurality of light-emitting units positioned in the optical sensor area; the light emitting unit includes a first light emitting sub-unit including a pixel driving circuit and at least one second light emitting sub-unit. The invention drives at least two light-emitting sub-units to emit light through one pixel driving circuit, can reduce the wiring density of the optical sensor area array substrate, and does not need to improve the brightness of pixels in the optical sensor area in the display of the display panel, thereby ensuring the light transmission of the optical sensor area of the display panel and not reducing the service life of the pixels in the optical sensor area of the display panel.

Description

Display panel and electronic device

Technical Field

The present invention relates to the field of display technologies, and in particular, to a display panel and an electronic device.

Background

In recent years, with the rapid development of OLED (Organic Light Emitting Diode) display technology, curved surface and flexible display products are rapidly brought into the market, and the technology update in the related field is also a change day by day. OLED refers to a diode that emits light by carrier injection and recombination under electric field driving using an organic semiconductor material and a light emitting material. The OLED display device has an increasingly wide application range due to advantages of light weight, self-luminescence, wide viewing angle, low driving voltage, high light-emitting efficiency, low power consumption, fast response speed, and the like.

An AMOLED (Active-Matrix Organic Light Emitting Diode) display device is a display device that uses current to drive an OLED device to emit Light to form a picture. The AMOLED display device is gradually a new generation display technology due to its characteristics of high contrast, wide color gamut, low power consumption, and being foldable. Compared with an LCD (Liquid Crystal Display), an AMOLED has a great advantage of self-luminescence, and since a backlight in the LCD is not required, a cpu (Camera under Panel) technology is possible.

In a conventional cpu technology, a Camera (Camera) region of a screen is required to display a screen picture, and external light is transmitted to a Lens (Lens) of the Camera through a whole display Panel, and generally, a pixel density (PPI) is locally reduced by using an optical sensor region (cpu region) to reduce a routing density of a cpu Array substrate (Array) and improve a light transmittance of the display Panel (Panel).

Referring to fig. 1, a display panel in the prior art is provided with an implementation manner of improving light transmittance. Under the condition that the original pixel arrangement mode is not changed, no matter the number of the intermediate pixels is proportionally removed (as shown in a part in fig. 1) or the pixels are removed according to the minimum repeating unit (as shown in a part b in fig. 1), in the display process of the display panel, the light emitting brightness of the pixels in the CUP Area needs to be larger than that of the pixels in other display areas (Active Area, hereinafter referred to as AA Area), so that the service life of the pixels in the CUP Area is shorter than that of the pixels in other AA areas. Thus, after the display panel is used for a long time, the color difference between the CUP area and other AA areas can be formed.

Therefore, how to ensure the light transmittance of the cpu region of the display panel without reducing the lifetime of the pixels therein is an urgent problem to be solved by the cpu technology.

Disclosure of Invention

The present invention has been made in view of the above problems, and it is an object of the present invention to provide a display panel and an electronic device that can ensure light transmittance of an optical sensor region of the display panel without reducing the lifetime of pixels in the optical sensor region, without increasing the luminance of the pixels in the optical sensor region in the display of the display panel.

To achieve the above object, the present invention provides a display panel having an optical sensor area corresponding to an optical sensor, the display panel including a plurality of light emitting cells located at the optical sensor area; the light emitting unit comprises a first light emitting subunit and at least one second light emitting subunit; the first light-emitting subunit comprises a pixel driving circuit, a first anode, a first cathode and a first light-emitting layer positioned between the first anode and the first cathode; the second light-emitting subunit comprises a second anode, a second cathode and a second light-emitting layer positioned between the second anode and the second cathode; and the pixel driving circuit is connected to the first anode to drive the first light-emitting layer to emit light, and is connected to the second anode to drive the second light-emitting layer to emit light.

In order to achieve the above object, the present invention further provides an electronic device including the display panel and the optical sensor according to the present invention.

The invention has the advantages that: the display panel can ensure the light transmission of the optical sensor area of the display panel without reducing the service life of the pixels in the optical sensor area without improving the brightness of the pixels in the optical sensor area in the display of the display panel.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

FIG. 1 is a diagram of a prior art implementation of a display panel with improved light transmission;

FIG. 2 is a schematic view of a layered structure of a first embodiment of a display panel according to the present invention;

FIGS. 3A-3E are schematic diagrams illustrating a process for manufacturing the display panel shown in FIG. 2;

FIG. 4 is a schematic view of a second embodiment of a display panel according to the present invention;

FIGS. 5A-5B are schematic diagrams illustrating a process for manufacturing the display panel shown in FIG. 4;

FIG. 6 is an elevational view of the position of the vias of FIG. 4 where the anodes overlap the source/drain traces;

FIG. 7 is a schematic view of a third embodiment of a display panel according to the present invention;

FIGS. 8A-8E are schematic views illustrating a process for manufacturing the display panel shown in FIG. 7;

FIG. 9 shows an implementation manner of the display panel according to an embodiment of the invention to improve light transmittance.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar components or components having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, which have been repeated for purposes of brevity and clarity and do not in themselves dictate a relationship between the various embodiments and/or arrangements discussed.

The display panel of the present invention has an optical sensor area corresponding to an optical sensor, the display panel including a plurality of light emitting cells located in the optical sensor area; the light emitting unit comprises a first light emitting subunit and at least one second light emitting subunit; the first light-emitting subunit comprises a pixel driving circuit, a first anode, a first cathode and a first light-emitting layer positioned between the first anode and the first cathode; the second light-emitting subunit comprises a second anode, a second cathode and a second light-emitting layer positioned between the second anode and the second cathode; and the pixel driving circuit is connected to the first anode to drive the first light-emitting layer to emit light, and is connected to the second anode to drive the second light-emitting layer to emit light. The first light-emitting layer and the second light-emitting layer can adopt OLED light-emitting materials, and the light-emitting colors of the OLED light-emitting materials can be consistent. That is, the invention drives at least two light-emitting sub-units to emit light through one pixel driving circuit, thus, in the display of the display panel, the brightness of the pixels in the optical sensor area does not need to be improved, and the service life of the pixels in the optical sensor area is ensured to be consistent with that of the pixels in other AA areas. The optical sensor is one or more of a camera and an optical fingerprint sensor.

Specifically, the pixel driving circuit includes a driving thin film transistor including a gate, a first pole and a second pole, and the second pole is connected to the first anode and the second anode. The first electrode and the second electrode are respectively a source/drain of the driving thin film transistor, for example, the first electrode is a source electrode, the second electrode is a drain electrode, or the first electrode is a drain electrode, and the second electrode is a source electrode.

Referring to fig. 2 and fig. 3A-3E, fig. 2 is a schematic diagram of a layered structure of a display panel according to a first embodiment of the invention, and fig. 3A-3E are schematic diagrams of a process for manufacturing the display panel shown in fig. 2.

As shown in fig. 2, the display panel has an optical sensor area corresponding to an optical sensor, and includes a plurality of light emitting units located at the optical sensor area; each of the light emitting units includes a first light emitting sub-unit 20a and a second light emitting sub-unit 20 a'. The first light emitting subunit 20a includes a pixel driving circuit, a first anode 200a, a first cathode (not shown in the figure), and a first light emitting layer (not shown in the figure) between the first anode and the first cathode; the second light emitting subunit 20a 'includes a second anode 200 a', a second cathode (not shown in the figures), and a second light emitting layer (not shown in the figures) between the second anode and the second cathode. The first light-emitting layer and the second light-emitting layer emit light in the same color, for example, blue, red, or green.

In the display panel of this embodiment, the pixel driving circuit includes a driving thin film transistor including a gate electrode 212, a first electrode 213b, and a second electrode 213 c; the display panel comprises a flat layer 209 positioned between the second pole 213c and the first anode 200a and the second anode 200 a', wherein a first via hole 200b is arranged on the flat layer 209; the second pole 213c is connected to the first anode 200a through the first via 200b, and the first anode 200a is connected to the second anode 200 a' through the trace 200 c. That is, the first anode 200a is overlapped with the second anode 213c of the driving thin film transistor through the first via 200b, and the second anode 200a 'is electrically connected to the first anode 200a through the trace, so that the second anode 213c is connected to the first anode 200a and the second anode 200 a', and the pixel driving circuit can drive the first light emitting layer to emit light and the second light emitting layer to emit light.

Preferably, the trace 200c is in the same layer as the first anode 200a and the second anode 200 a'. That is, the connection line between the second anode 200 a' and the first anode 200a may be directly connected by an anode layer wire (ITO/Ag/ITO).

The following describes the manufacturing process of the display panel of the present invention with reference to the accompanying drawings:

step 1: a Buffer layer (Buffer)202 is deposited on the substrate base plate 201, and an active layer (Act)211 is deposited on the Buffer layer 202. The source/drain contact region is formed by etching and patterning the active layer to form a polysilicon (Poly-Si) layer (channel region) and heavily ion doping the polysilicon layer. Specifically, a channel region 211a and source/drain contact regions 211b/211c of the driving thin film transistor are formed on the buffer layer 202, as shown in fig. 3A. The substrate 201 may be a glass (glass) substrate or a flexible substrate made of a flexible base material (PI).

Step 2: depositing a first gate insulation layer (GI1)203, depositing a first metal layer on the first gate insulation layer 203; by etching and patterning the first metal layer, a gate electrode 212a of the driving thin film transistor is formed, as shown in fig. 3B. The first metal layer may be a first gate metal layer (GE1), and the gate 212a also serves as a lower plate of a capacitor of the pixel driving circuit.

And 3, step 3: a second gate insulating layer (GI2)204 is deposited, a second metal layer is deposited on the second gate insulating layer 204, and etching and patterning are performed to form the upper plate 212b of the capacitor of the pixel driving circuit, as shown in fig. 3C. The second metal layer may be a second gate metal layer (GE 2).

And 4, step 4: depositing an inter-line dielectric layer (ILD)205, and etching the ILD via 205a on the inter-line dielectric layer 205 at a position corresponding to the source/drain contact regions 211b/211 c; depositing a third metal layer on the inter-line dielectric layer 205, and etching and patterning the third metal layer to form a first electrode 213b and a second electrode 213c of the driving thin film transistor; the first and

second electrodes

213b and 213c of the driving thin film transistor are in contact with the source/

drain contact regions

211b and 211c of the driving thin film transistor through the ILD via 205a, respectively, as shown in fig. 3D. I.e. the third metal layer is the source/drain routing layer (SD). The first pole can be a source, and the second pole is a drain at the moment; or the first pole may be a drain, and the second pole is a source, which is not limited in the present invention.

And 5, step 5: coating, exposing, developing, curing and patterning to form a flat layer 209, and etching the flat layer 209 at a position corresponding to the second electrode 213c of the driving thin film transistor to form a first via hole 200 b; depositing, etching and patterning the planarization layer 209 to form a first Anode (Anode)200a and a second Anode 200a ', wherein the first Anode 200a is connected to the second electrode 213c of the driving tft through the first via 200b, and the second Anode 200 a' is electrically connected to the first Anode 200a directly using an Anode layer trace, as shown in fig. 3E. That is, for the light emitting units with the same color, the anode without the array wire is connected to the anode without the array wire through the anode layer wire (ITO/Ag/ITO), so that the pixel driving circuit can drive the first light emitting layer to emit light and the second light emitting layer to emit light. The planarization layer 209 may be an organic Planarization Layer (PLN).

And 6, a step of: coating, exposing, developing, curing and patterning to form a Pixel Definition Layer (PDL)210, where the pixel definition layer 210 is formed with a first opening 210a exposing a portion of the first anode 200a and a second opening 210a 'exposing a portion of the second anode 200 a', as shown in fig. 2. In a front view, the first via 200b is located between the first opening 210a and the second opening 210 a', so that the influence of the voltage drop can be reduced.

Referring to fig. 4, fig. 5A-5B and fig. 6, wherein fig. 4 is a schematic diagram of a layered structure of a display panel according to a second embodiment of the invention, fig. 5A-5B are schematic diagrams of a manufacturing process of the display panel shown in fig. 4, and fig. 6 is a front view of a via position where an anode and a source/drain trace are overlapped in fig. 4.

As shown in fig. 4, the display panel has an optical sensor area corresponding to an optical sensor, and includes a plurality of light emitting units located at the optical sensor area; each of the light emitting units includes a first light emitting sub-unit 20a and a second light emitting sub-unit 20 a'. The first light emitting subunit 20a includes a pixel driving circuit, a first anode 200a, a first cathode (not shown in the figure), and a first light emitting layer (not shown in the figure) between the first anode and the first cathode; the second light emitting subunit 20a 'includes a second anode 200 a', a second cathode (not shown in the figures), and a second light emitting layer (not shown in the figures) between the second anode and the second cathode. The first light-emitting layer and the second light-emitting layer emit light in the same color, for example, both blue or both red or both green.

In the display panel of this embodiment, the pixel driving circuit includes a driving thin film transistor including a gate electrode 212, a first electrode 213b, and a second electrode 213 c; the display panel comprises a flat layer 209 positioned between the second pole 213c and the first and

second anodes

200a and 200a ', and a first via hole 200b and a second via hole 200 b' are arranged on the flat layer 209; the second pole 213c is connected to the first anode 200a through the first via 200b and connected to the second anode 200a 'through the second via 200 b'. That is, a connection line between the first anode 200a and the second anode 200 a' may use a source/drain trace (Ti/Al/Ti) as a conductive line, so that the pixel driving circuit may drive the first light emitting layer to emit light and the second light emitting layer to emit light.

Preferably, the display panel includes a pixel defining layer 210 formed on the first anode 200a and the second anode 200a ', and the pixel defining layer 210 is opened with a first opening 210a exposing a portion of the first anode 200a and a second opening 210a ' exposing a portion of the second anode 200a '; in a front view, the first via 200b overlapping the first anode 200a and the second pole 213c of the driving tft, and the second via 200b ' connecting the second anode 200a ' and the second pole 213c are located between the first opening 210a and the second opening 210a '. The first via 200b and the second via 200b 'are disposed between the first opening 210a and the second opening 210 a' as much as possible, so that the influence of voltage drop when one pixel driving circuit drives two light emitting sub-units of the same color at the same time can be reduced.

the preparation process from step 1 to step 3 can be shown in fig. 3A to 3C, and will not be described herein again.

And 4, step 4: depositing an inter-line dielectric layer (ILD)205, and etching to form an ILD via 205a on the inter-line dielectric layer 205 at a position corresponding to the source/drain contact regions 211b/211 c; depositing a third metal layer on the inter-line dielectric layer 205, and etching and patterning the third metal layer to form a first electrode 213b and a second electrode 213c of the driving thin film transistor, wherein the second electrode 213c extends a wire 213d toward the second light emitting subunit 20 a'; the first and

second electrodes

drain contact regions

211b and 211c of the driving thin film transistor through the corresponding ILD vias 205A, respectively, as shown in fig. 5A. That is, the third metal layer may be a source/drain trace layer (SD), and the trace 213d may be a source/drain trace. The first pole can be a source, and the second pole is a drain at the moment; or the first pole may be a drain, and the second pole is a source, which is not limited in the present invention.

And 5, step 5: coating, exposing, developing, curing and patterning to form a flat layer 209, etching a position, corresponding to the second pole 213c of the driving thin film transistor, on the flat layer 209 to form a first via hole 200b, and etching a position, corresponding to the trace 213d, far away from the second pole 213c to form a second via hole 200 b'; a first Anode (Anode)200a and a second Anode 200a ' are deposited, etched and patterned on the planarization layer 209, the first Anode 200a is overlapped with the second electrode 213c of the driving thin film transistor through the first via 200B, and the second Anode 200a ' is overlapped with the trace 213d through the second via 200B ', as shown in fig. 5B. That is, for the light emitting units with the same color, the anode without the array trace is connected to the anode without the array trace through the source/drain trace, so that the pixel driving circuit can drive the first light emitting layer to emit light and drive the second light emitting layer to emit light. The planarization layer 209 may be an organic Planarization Layer (PLN).

And 6, step 6: coating, exposing, developing, curing and patterning to form a Pixel Definition Layer (PDL)210, where the pixel definition layer 210 is opened with a first opening 210a exposing a portion of the first anode 200a and a second opening 210a 'exposing a portion of the second anode 200 a', as shown in fig. 4. In a front view, the first via 200b and the second via 200b 'are located between the first opening 210a and the second opening 210 a', so that the influence of the voltage drop can be reduced.

Referring to fig. 7 and fig. 8A to 8E, fig. 7 is a schematic diagram of a layer structure of a display panel according to a third embodiment of the invention, and fig. 8A to 8E are schematic diagrams of a process for manufacturing the display panel shown in fig. 7.

As shown in fig. 7, the display panel has an optical sensor area corresponding to an optical sensor, and includes a plurality of light emitting units located at the optical sensor area; each of the light emitting cells includes a first light emitting sub-cell 70a and a second light emitting sub-cell 70 a'. The first light-emitting subunit 70a includes a pixel driving circuit, a first anode 700a, a first cathode (not shown in the figure), and a first light-emitting layer (not shown in the figure) between the first anode and the first cathode; the second light-emitting sub-unit 70a 'includes a second anode 700 a', a second cathode (not shown), and a second light-emitting layer (not shown) between the second anode and the second cathode. The first light-emitting layer and the second light-emitting layer emit light in the same color, for example, blue, red, or green.

In the display panel of this embodiment, the pixel driving circuit includes a driving thin film transistor (driving TFT) and a switching thin film transistor (switching TFT). The driving thin film transistor includes a gate 712a, a first pole 713b, and a second pole 713 c; the switching thin film transistor includes a gate 712a ', a first pole 713b ', and a second pole 713c '; the first pole 713b ' of the switching thin film transistor is connected to the second pole 713c of the driving thin film transistor, the second pole 713c of the driving thin film transistor is connected to the first anode 700a, and the second pole 713c ' of the switching thin film transistor is connected to the second anode 700a '. That is, the connection line between the first anode 700a and the second anode 700a 'may use a switching thin film transistor as a conducting line, so that the second electrode 713c of the driving thin film transistor is connected to the first anode 700a and the second anode 700 a', and the pixel driving circuit may drive the first light emitting layer to emit light and the second light emitting layer to emit light.

Specifically, the display panel includes a flat layer 709 located between the second poles 713c ' of the switching thin film transistors and the driving thin film transistors and the first anode 700a and the second anode 700a ', and a first via hole 700b and a second via hole 700b ' are arranged on the flat layer 709; the second pole 713c of the driving thin film transistor is connected to the first anode 700a through the first via 700b, and the second pole 713c ' of the switching thin film transistor is connected to the second anode 700a ' through the second via 700b '.

Preferably, the display panel includes a pixel defining layer 710 formed on the first anode 700a and the second anode 700a ', and the pixel defining layer 710 has a first opening 710a exposing a portion of the first anode 700a and a second opening 710a ' exposing a portion of the second anode 700a '; in a front view, the first via 700b where the first anode 700a overlaps the second pole 713b of the driving tft, and the second via 700b 'where the second anode 700 a' overlaps the second pole 713c 'of the switching tft are located between the first opening 710a and the second opening 710 a', as shown in fig. 6. The first via 700b and the second via 700b 'are disposed between the first opening 710a and the second opening 710 a' as much as possible, so that the influence of voltage drop when one pixel driving circuit drives two light emitting sub-units of the same color at the same time can be reduced.

step 1: a Buffer layer (Buffer)702 is deposited on the substrate base plate 701, and an active layer (Act)711 is deposited on the Buffer layer 702. The source/drain contact regions are formed by etching and patterning the active layer to form a polysilicon (Poly-Si) layer (channel region) and heavily ion doping the polysilicon layer. Specifically, a channel region 711a and source/drain contact regions 711b/711c of the driving thin film transistor, and a channel region 711a ' and source/drain contact regions 711b '/711 c ' of the switching thin film transistor are formed, respectively, as shown in fig. 8A. The substrate base 701 may be a glass (glass) base or a flexible base made of a flexible base material (PI).

Step 2: depositing a first gate insulation layer (GI1)703, depositing a first metal layer on the first gate insulation layer 703; by etching and patterning the first metal layer, a gate electrode 712a of the driving thin film transistor and a gate electrode 712 a' of the switching thin film transistor are formed, respectively, as shown in fig. 8B. The first metal layer may be a first gate metal layer (GE1), and the gate 712a of the driving thin film transistor simultaneously serves as a lower plate of a capacitor of the pixel driving circuit.

And 3, step 3: a second gate insulating layer (GI2)704 is deposited, a second metal layer is deposited on the second gate insulating layer 704, and is etched and patterned to form an upper plate 712b of the capacitor of the pixel driving circuit, as shown in fig. 8C. The second metal layer may be a second gate metal layer (GE 2).

And 4, step 4: depositing an inter-line dielectric layer (ILD)705, and etching to form an ILD via 705a on the inter-line dielectric layer 705 at a position corresponding to the source/drain contact region; depositing a third metal layer on the inter-line dielectric layer 705, and etching and patterning the third metal layer to form a first pole 713b and a second pole 713c of the driving thin film transistor, and a first pole 713b 'and a second pole 713 c' of the switching thin film transistor, respectively; a first pole 713 b' of the switching thin film transistor and connected to the second pole 713c of the driving thin film transistor; the first and

second poles

713b and 713c of the driving thin film transistor are in contact with the source/drain contact regions 711b/711c of the driving thin film transistor through the corresponding ILD via 705a, respectively, and the first and second poles 713b 'and 713 c' of the switching thin film transistor are in contact with the source/drain contact regions 711b '/711 c' of the switching thin film transistor through the corresponding ILD via 705a, respectively, as shown in fig. 8D. That is, the third metal layer may be a source/drain wiring layer (SD). The first pole can be a source, and the second pole is a drain at the moment; or the first pole may be a drain, and the second pole is a source, which is not limited in the present invention.

And 5, step 5: coating, exposing, developing, curing and patterning to form a flat layer 709, etching a position, corresponding to the second pole 713c of the driving thin film transistor, of the flat layer 709 to form a first through hole 700b, and etching a position, corresponding to the second pole 713c 'of the switching thin film transistor, to form a second through hole 700 b'; a first Anode (Anode)700a and a second Anode 700a 'are formed by depositing, etching and patterning on the planarization layer 709, wherein the first Anode 700a overlaps the second pole 713c of the driving tft through the first via 700b, and the second Anode 700 a' overlaps the second pole 713c 'of the switching tft through the second via 700 b', as shown in fig. 8E. That is, for the light emitting units of the same color, the anode without the array trace is connected to the anode without the array trace through the switching thin film transistor, so that the pixel driving circuit can drive the first light emitting layer to emit light and drive the second light emitting layer to emit light. The planarization layer 709 may be an organic Planarization Layer (PLN), among others.

And 6, step 6: coating, exposing, developing, curing and patterning to form a Pixel Definition Layer (PDL)710, where the pixel definition layer 710 is formed with a first opening 710a exposing a portion of the first anode 700a and a second opening 710a 'exposing a portion of the second anode 700 a', as shown in fig. 7. The first and

second vias

700b and 700b 'are located between the first and

second apertures

710a and 710 a', which may reduce the effect of pressure drop. Wherein an elevation view of the via locations can be seen with reference to figure 6.

Referring to fig. 9, an implementation manner of the display panel of the present invention for improving light transmittance is shown. In this embodiment, the light emitting unit 91 includes a first light emitting subunit 911 and a second light emitting subunit 912 which are arranged longitudinally and have the same light emitting color, and three light emitting units 91 adjacent laterally form a light emitting basic unit; in the light-emitting basic unit, all the first light-emitting sub-units 911 are located in the same row, and all the second light-emitting sub-units 912 are located in the same row. That is, the adjacent light-emitting sub-units with the same color share the same pixel driving circuit.

Preferably, all the first light-emitting sub-units of one light-emitting basic unit 92a and all the first light-emitting sub-units of the other light-emitting basic unit 92b in the two laterally adjacent light-emitting basic units are located in different rows. For the adjacent light-emitting sub-units (corresponding to the R/G/B sub-pixels) with the same color, the anodes of the light-emitting sub-units (shown by the dotted line in fig. 9) without the array wiring are electrically connected with the anodes of the light-emitting sub-units (shown by the black line in fig. 9) without the array wiring, so that the wiring density of the array substrate in the optical sensor area is reduced, and in panel display, the brightness of the pixels in the optical sensor area does not need to be improved, thereby ensuring that the service life of the pixels in the optical sensor area is consistent with that of the pixels in other AA areas.

Based on the same inventive concept, the invention also provides an electronic device, which comprises the display panel and the optical sensor. The optical sensor is one or more of a camera and an optical fingerprint sensor. The optical sensor is positioned on one side of the display panel, and the optical sensor and the optical sensing element are at least partially overlapped in a top view angle. The electronic device can comprise a display module, a mobile terminal (such as a smart phone), a fixed terminal (such as a computer) and the like. The display panel of the electronic device reduces the wiring density of the optical sensor area array substrate, and does not need to improve the brightness of the pixels in the optical sensor area in panel display, thereby ensuring that the service life of the pixels in the optical sensor area is consistent with that of the pixels in other AA areas.

The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims

1. A display panel having an optical sensor area corresponding to an optical sensor, the display panel comprising a plurality of light emitting cells located in the optical sensor area;

the light emitting unit comprises a first light emitting subunit and at least one second light emitting subunit;

the first light-emitting subunit comprises a pixel driving circuit, a first anode, a first cathode and a first light-emitting layer positioned between the first anode and the first cathode;

the second light-emitting subunit comprises a second anode, a second cathode and a second light-emitting layer positioned between the second anode and the second cathode; and the number of the first and second groups,

the pixel driving circuit is connected to the first anode to drive the first light-emitting layer to emit light, and is connected to the second anode to drive the second light-emitting layer to emit light;

the pixel driving circuit comprises a driving thin film transistor, wherein the driving thin film transistor comprises a grid electrode, a first pole and a second pole, and the second pole is connected to the first anode and the second anode;

the pixel driving circuit further comprises a switching thin film transistor, wherein the switching thin film transistor comprises a grid electrode, a first pole and a second pole, the first pole of the switching thin film transistor is connected to the second pole of the driving thin film transistor, the second pole of the driving thin film transistor is connected to the first anode, and the second pole of the switching thin film transistor is connected to the second anode.

2. The display panel according to claim 1, wherein the first light-emitting layer and the second light-emitting layer emit light of the same color.

3. The display panel according to claim 1, wherein the display panel comprises a planarization layer between the second electrode and the first and second anodes, the planarization layer having a first via hole formed thereon;

the second pole is connected to the first anode through the first via hole, and the first anode is connected to the second anode through a wire.

4. The display panel according to claim 3, wherein the traces are at the same layer as the first anode and the second anode.

5. The display panel of claim 1, wherein the display panel comprises a planarization layer between the second electrode and the first and second anodes, the planarization layer having a first via and a second via disposed thereon; the second pole is connected to the first anode through the first via hole and to the second anode through the second via hole.

6. The display panel of claim 1, wherein the display panel includes a planarization layer between the second electrodes of the switching thin film transistors and the driving thin film transistors and the first and second anodes, the planarization layer having a first via and a second via disposed thereon;

the second pole of the driving thin film transistor is connected to the first anode through the first via hole, and the second pole of the switching thin film transistor is connected to the second anode through the second via hole.

7. The display panel according to claim 5 or 6, wherein the display panel includes a pixel defining layer formed on the first anode and the second anode, the pixel defining layer having a first opening exposing a portion of the first anode and a second opening exposing a portion of the second anode;

under a front view, the first via hole and the second via hole are located between the first opening and the second opening.

8. The display panel according to claim 1, wherein the light emitting unit includes a first light emitting subunit and a second light emitting subunit which are arranged in a longitudinal direction and have the same light emitting color, and three light emitting units adjacent in a lateral direction constitute a light emitting basic unit; in the light-emitting basic unit, all the first light-emitting sub-units are located in the same row, and all the second light-emitting sub-units are located in the same row.

9. The display panel according to claim 8, wherein all the first light-emitting cells of one of the laterally adjacent two light-emitting basic units are located in a different row from all the first light-emitting cells of the other light-emitting basic unit.

10. An electronic device, comprising the display panel according to any one of claims 1 to 9 and an optical sensor.

11. The electronic device of claim 10, wherein the optical sensor is one or more of a camera, an optical fingerprint sensor.

12. The electronic device of claim 10, wherein the optical sensor is located on a side of the display panel, and the optical sensor and the optical sensing element at least partially overlap in a top view.