CN111487845A - Method for manufacturing L ED die electrode mask pattern capable of being directly stripped - Google Patents

Method for manufacturing L ED die electrode mask pattern capable of being directly stripped Download PDF

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Publication number
CN111487845A
CN111487845A CN201910085347.3A CN201910085347A CN111487845A CN 111487845 A CN111487845 A CN 111487845A CN 201910085347 A CN201910085347 A CN 201910085347A CN 111487845 A CN111487845 A CN 111487845A
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China
Prior art keywords
film layer
layer
wafer
glue film
mask pattern
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CN201910085347.3A
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Chinese (zh)
Inventor
徐晓强
张兆喜
吴向龙
闫宝华
王成新
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Shandong Inspur Huaguang Optoelectronics Co Ltd
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Shandong Inspur Huaguang Optoelectronics Co Ltd
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Priority to CN201910085347.3A priority Critical patent/CN111487845A/en
Publication of CN111487845A publication Critical patent/CN111487845A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes

Abstract

A manufacturing method of L ED die electrode mask patterns capable of being directly stripped is characterized in that two glue film layers composed of negative photoresist and a filling layer arranged between the first glue film layer and the second glue film layer are prepared on a L ED crystal to obtain a manufacturing method suitable for metal electrode mask patterns, the thickness of the first glue film layer and the second glue film layer is thinner, only a small amount of photoresist is used for manufacturing mask patterns meeting thicker requirements, the metal electrode patterns can be directly stripped without additional processing on the premise of completeness, the matching of the two glue films with proper thickness and the silicon dioxide layer can achieve the effect of directly stripping the metal electrode mask patterns which can be manufactured only by using thick photoresist, and the first glue film layer, the filling layer and the second glue film layer are sequentially manufactured and then the electrode mask patterns are prepared, so that two photoetching steps can be reduced, the whole process is simple and easy to implement, and the cost is low.

Description

Method for manufacturing L ED die electrode mask pattern capable of being directly stripped
Technical Field
The invention relates to the technical field of L ED manufacturing, in particular to a manufacturing method of a L ED die electrode mask pattern capable of being directly stripped.
Background
L ED (L light Emitting Diode) is a solid electroluminescent (E L) semiconductor device which converts electric energy into light energy, L ED substantial core structure is a P-N node formed by III-IV group or III-V group compound materials in an element spectrum, L ED light radiation spectrum is distributed on a unique surface, the light radiation spectrum is not monochromatic light (such as laser) or wide spectrum radiation (such as incandescent lamp), but is between the monochromatic light and the broad spectrum radiation (such as incandescent lamp), the bandwidth and peak wavelength of dozens of nanometers are located in a visible light or near infrared region, L ED has the advantages of 1, high efficiency, high luminous efficiency, L ED and incandescent lamp with the same power, L ED and the like which do not contain much good lighting effect, 2, long service life, namely, 5 ED lamp longest service life can reach 10 ten thousand hours, half-decay period can reach more than 5 thousand hours, 3, low power consumption, incandescent lamp with the same luminous efficiency can save more than 70%, 4, low-color fault, low-color semiconductor component, high-color-frequency semiconductor device, short-time-cycle semiconductor device, low-time-saving, low-color-frequency semiconductor device, high-frequency semiconductor device, low-frequency semiconductor device, high-frequency emission, low-frequency emission, high-frequency emission, low-frequency semiconductor device, high-emission, low-emission semiconductor device, low-emission.
L ED die is generally composed of current spreading layer and metal electrode, the metal electrode is generally made by two methods, one is to make metal film layer by direct evaporation, sputtering or chemical gold plating, then make protective film and corrode electrode pattern needed by chemical corrosion liquid, the other method is to make mask pattern by photoresist, then make metal film layer, tear off the excess metal by adhesive film stripping method, then remove surface photoresist, make electrode pattern, the invention is to the invention creation carried out by the second method, namely stripping method, when making electrode pattern by stripping method, it is most convenient to tear off metal and excess photoresist by blue film directly after making metal, but in the actual making course, because the photoresist is usually closely adhered, generally after needing to use organic solvent to dissolve part of photoresist (reduce the adhesiveness of metal film layer), it can be torn off by adhesive film, then use corresponding solution to remove residual photoresist, in order to be able to directly strip off, the traditional making method, the photoresist pattern is usually needed to be made by photoresist film layer with thickness of 5-5 microns, and the photoresist thickness is usually required to be more than 5 microns, and the photoresist film layer thickness is usually required to be made by photoresist with the photoresist is more than the most easily made by photoresist in the photoresist manufacturing process of photoresist.
Chinese patent document CN 105023841A (201410165571.0) proposes a method for removing gold on a wafer surface by stripping gold, comprising the following steps: firstly, residual photoresist and metal on the surface of a chip are removed by spraying high-pressure NMP to the surface of a wafer, and then the NMP on the surface of the wafer after photoresist removal is removed by IPA dissolution. The method adopts a high-pressure spraying mode to strip off metal on the surface of the wafer, but the whole process is quite complicated, the NMP high-pressure spraying has high requirements on the substrate of the wafer, when the wafer is thin, the wafer is easy to crack, and in order to obtain high brightness, the wafer is generally only made to be less than 150 micrometers, so that the wide-range use of the invention is limited.
Disclosure of Invention
The invention provides a method for manufacturing an L ED die electrode mask pattern which can be directly peeled and can realize direct sticky film covering and metal peeling without additionally processing the mask pattern under the condition of a thin photoresist.
The technical scheme adopted by the invention for overcoming the technical problems is as follows:
a method for manufacturing an L ED die electrode mask pattern capable of being directly stripped comprises the following steps:
a) preparing a current expansion layer on a substrate and an epitaxial layer to obtain an L ED wafer, coating a negative photoresist on the upper surface of a L ED wafer, preparing a first film layer consisting of the negative photoresist on the current expansion layer, wherein the thickness of the first film layer is 3000-5000 angstroms, and drying the L ED wafer coated with the photoresist;
b) placing the L ED wafer into a growth chamber of a PECVD apparatus, and growing a filling layer made of silicon dioxide material on the first glue film layer, wherein the thickness of the filling layer is 20000-;
c) taking out the L ED wafer from a growth chamber of PECVD equipment, coating negative photoresist on the filling layer, preparing a second glue film layer consisting of the negative photoresist on the filling layer, wherein the thickness of the second glue film layer is 3000-5000 angstroms, and drying the L ED wafer after glue coating;
d) exposing and developing the second glue film layer of the L ED wafer, manufacturing an electrode mask pattern on the second glue film layer, and etching off the second glue film layer, the filling layer and the area in the electrode mask pattern of the first glue film layer;
e) preparing metal electrodes on the current spreading layer and the second adhesive film layer by an L ED wafer through an evaporation table or a sputtering table;
f) and adhering the adhesive film to the outer surface of the metal electrode at the upper end of the second adhesive film layer of the L ED wafer, and tearing off the first adhesive film layer, the filling layer, the second adhesive film layer and the metal electrode growing on the second adhesive film layer from the current spreading layer through the adhesive film.
Preferably, the L ED wafer after being coated with the glue in step a) is placed on a hot plate for drying.
Preferably, the temperature in the growth chamber of the PECVD apparatus in step b) is 60-90 ℃.
Preferably, the L ED wafer is dried by placing it on a hot plate in step c).
Preferably, the drying temperature in the step a) and the step c) is 90-110 ℃, and the drying time is 1-10 min.
Preferably, the growth rate of the filling layer in step b) is 10-50A/s, and the temperature in the growth chamber is 70 ℃.
Preferably, the etching solution used in the etching operation in step d) is hydrofluoric acid.
Preferably, the thickness of the metal electrode in step e) is 30000-45000 angstroms.
The invention has the advantages that the mask pattern suitable for metal electrodes is manufactured by preparing two glue film layers consisting of negative photoresist and a filling layer arranged between the first glue film layer and the second glue film layer on the L ED crystal, the thickness of the first glue film layer and the second glue film layer is thinner, the mask pattern meeting the thicker requirement is manufactured by using less photoresist, so that the metal electrode pattern can be directly stripped on the premise of completeness, no additional treatment is needed, the matching of the two glue films with proper thickness and the silicon dioxide layer can finish the effect of directly stripping the metal electrode mask pattern which can be manufactured by using thick photoresist, and the preparation of the electrode mask pattern can be carried out after the first glue film layer, the filling layer and the second glue film layer are manufactured in sequence, so that the two photoetching steps can be reduced, the whole process is simple and easy to implement, and the cost is lower.
Drawings
FIG. 1 is a schematic structural diagram of an L ED wafer of the present invention;
FIG. 2 is a schematic structural diagram of the second adhesive film layer of the present invention;
FIG. 3 is a schematic structural diagram of the second glue film layer, the filling layer and the first glue film layer after etching;
FIG. 4 is a schematic structural diagram of a metal electrode according to the present invention;
FIG. 5 is a schematic structural diagram of a stripped metal electrode of the present invention;
in the figure, 1, a substrate, an epitaxial layer 2, a current spreading layer 3, a first adhesive film layer 4, a filling layer 5, a second adhesive film layer 6 and a metal electrode are arranged.
Detailed Description
The invention will be further described with reference to fig. 1 to 5.
A method for manufacturing an L ED die electrode mask pattern capable of being directly stripped comprises the following steps:
a) preparing a current expansion layer 2 on a substrate and an epitaxial layer 1 to obtain an L ED wafer, coating a negative photoresist on the upper surface of a L ED wafer, preparing a first film layer 3 consisting of the negative photoresist on the current expansion layer 2, wherein the thickness of the first film layer 3 is 3000-plus 5000 angstroms, and drying the coated L ED wafer;
b) placing the L ED wafer into a growth chamber of a PECVD apparatus, growing a filling layer 4 made of silicon dioxide material on the first glue film layer 3, wherein the thickness of the filling layer 4 is 20000-;
c) taking out the L ED wafer from a growth chamber of PECVD equipment, coating negative photoresist on the filling layer 4, manufacturing a second glue film layer 5 consisting of the negative photoresist on the filling layer 4, wherein the thickness of the second glue film layer 5 is 3000-5000 angstroms, and drying the L ED wafer after glue coating;
d) exposing and developing the second glue film layer 5 of the L ED wafer, manufacturing an electrode mask pattern on the second glue film layer 5, and etching away areas in the electrode mask pattern of the second glue film layer 5, the filling layer 4 and the first glue film layer 3;
e) preparing a metal electrode 6 on the current spreading layer 2 and the second adhesive film layer 5 by an L ED wafer through an evaporation station or a sputtering station;
f) an adhesive film is attached to the outer surface of the metal electrode 6 at the upper end of the second adhesive film layer 5 of the L ED wafer, and the first adhesive film layer 3, the filling layer 4, the second adhesive film layer 5 and the metal electrode 6 grown on the second adhesive film layer 5 at two sides of the current spreading layer 2 are torn off from the current spreading layer 2 through the adhesive film.
The manufacturing method is suitable for manufacturing metal electrode mask patterns by preparing two glue film layers consisting of negative photoresist on L ED crystals and a filling layer 4 arranged between a first glue film layer 3 and a second glue film layer 5, the thicknesses of the first glue film layer 3 and the second glue film layer 5 are thinner, only a mask pattern meeting the requirement of being thicker is manufactured by using less photoresist, so that the metal electrode patterns can be directly stripped on the premise of completeness, no additional treatment is needed, the matching of the two glue film layers with proper thickness and the silicon dioxide layer can finish the effect of directly stripping the metal electrode mask patterns which can be manufactured only by using thick glue, the preparation of the electrode mask patterns can be carried out after the first glue film layer 3, the filling layer 4 and the second glue film layer 5 are sequentially manufactured, thus, the two photoetching steps can be reduced, the whole process is simple and easy to operate, the cost is lower, the current expansion layer 2 is in contact with the first glue film layer 3, the second glue film layer 5 is in contact with the metal electrode 6, the adhesion degree of the whole film layer can be ensured, the phenomenon that the stripping cannot be too firm or fall is avoided, the phenomenon that the silicon dioxide layer cannot be excessively corroded, the problem that the manufacturing process of the wafer manufacturing process is solved, the problem that the cost is that the wafer is solved, the problem that the extra corrosion of the manufacturing process that the special coating process is solved, the wafer L is solved, and the problem that the extra corrosion of the wafer manufacturing process is solved is that the wafer is high.
Example 1:
placing the L ED wafer glued in the step a) on a hot plate for drying.
Example 2:
the temperature in the growth chamber of the PECVD apparatus in step b) is 60-90 ℃.
Example 3:
in step c), the L ED wafer is placed on a hot plate for drying.
Example 4:
the drying temperature in the step a) and the step c) is 90-110 ℃, and the drying time is 1-10 min.
Example 5:
the growth rate of the filling layer 4 in the step b) is 10-50 angstrom/sec, and the temperature in the growth chamber is 70 ℃.
Example 6:
the etching solution used in the etching operation in the step d) is hydrofluoric acid.
Example 7:
the thickness of the metal electrode 6 in the step e) is 30000-45000 angstroms.

Claims (8)

1. A method for forming an L ED die electrode mask pattern capable of being directly peeled off is characterized by comprising the following steps:
a) preparing a current expansion layer (2) on a substrate and an epitaxial layer (1) to obtain an L ED wafer, coating a negative photoresist on the upper surface of a L ED wafer, preparing a first film layer (3) consisting of the negative photoresist on the current expansion layer (2), wherein the thickness of the first film layer (3) is 3000-5000 angstroms, and drying the L ED wafer coated with the photoresist;
b) placing the L ED wafer into a growth chamber of a PECVD device, and growing a filling layer (4) made of silicon dioxide material on the first glue film layer (3), wherein the thickness of the filling layer (4) is 20000-;
c) taking out the L ED wafer from a growth chamber of PECVD equipment, coating negative photoresist on the filling layer (4), manufacturing a second glue film layer (5) consisting of the negative photoresist on the filling layer (4), wherein the thickness of the second glue film layer (5) is 3000-5000 angstroms, and drying the coated L ED wafer;
d) exposing and developing the second glue film layer (5) of the L ED wafer, manufacturing an electrode mask pattern on the second glue film layer (5), and etching away areas in the electrode mask pattern of the second glue film layer (5), the filling layer (4) and the first glue film layer (3);
e) preparing a metal electrode (6) on the current spreading layer (2) and the second adhesive film layer (5) by an L ED wafer through an evaporation station or a sputtering station;
f) the adhesive film is attached to the outer surface of a metal electrode (6) at the upper end of a second adhesive film layer (5) of an L ED wafer, and a first adhesive film layer (3), a filling layer (4), a second adhesive film layer (5) and the metal electrode (6) growing on the second adhesive film layer (5) on two sides of a current spreading layer (2) are torn off from the current spreading layer (2) through the adhesive film.
2. The method for forming an L ED die electrode mask pattern capable of being directly peeled off as claimed in claim 1, wherein the L ED wafer after the paste is coated in step a) is dried by placing it on a hot plate.
3. The method for forming an L ED die electrode mask pattern capable of being directly stripped according to claim 1, wherein the temperature in the growth chamber of the PECVD apparatus in step b) is 60-90 ℃.
4. The method of claim 1, wherein the L ED wafer is baked on a hot plate in step c).
5. The method for forming L ED die electrode mask pattern capable of being directly peeled off as set forth in claim 1, wherein the baking temperature in step a) and step c) is 90-110 deg.C, and the baking time is 1-10 min.
6. The method for forming L ED die electrode mask pattern capable of being directly peeled off as set forth in claim 3, wherein the growth rate of the filling layer (4) in step b) is 10-50A/s, and the temperature in the growth chamber is 70 ℃.
7. The method as claimed in claim 1, wherein the etching solution used in the etching step d) is hydrofluoric acid.
8. The method as claimed in claim 1, wherein the thickness of the metal electrode (6) in step e) is 30000 and 45000 angstroms.
CN201910085347.3A 2019-01-29 2019-01-29 Method for manufacturing L ED die electrode mask pattern capable of being directly stripped Pending CN111487845A (en)

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