CN111478027A - Broadband double-trapped wave ultra-wideband antenna - Google Patents
Broadband double-trapped wave ultra-wideband antenna Download PDFInfo
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- CN111478027A CN111478027A CN202010174006.6A CN202010174006A CN111478027A CN 111478027 A CN111478027 A CN 111478027A CN 202010174006 A CN202010174006 A CN 202010174006A CN 111478027 A CN111478027 A CN 111478027A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/48—Earthing means; Earth screens; Counterpoises
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
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Abstract
The invention discloses a broadband double-trapped-wave ultra-wideband antenna which has the advantages of simple structure, miniaturization and wide trapped-wave frequency band. In order to achieve the purpose, the technical scheme of the invention is as follows: a broadband double-trapped wave ultra-wideband antenna comprises a dielectric substrate, a radiating element, a microstrip feeder line and a metal ground plate. The radiating unit is covered on the upper surface of the dielectric substrate, and the metal grounding plate is covered on the lower surface of the dielectric substrate. The microstrip feeder line is covered on the upper surface of the dielectric substrate and is in contact connection with the radiation unit. An open resonant ring is etched on the microstrip feed line.
Description
Technical Field
The invention relates to the technical field of ultra-wideband trapped wave antennas, in particular to a broadband double-trapped wave ultra-wideband antenna.
Background
The ultra-wideband antenna technology originated from research on the theory of time domain electromagnetism in the 60 th 20 th century, and was originally used for describing the instantaneous characteristics of a certain microwave network through impulse response, and then was used in the design of a wideband antenna, by the 14 nd 2/2002, the Federal Communications Commission (FCC) of the united states formally defined the operating frequency band of AN ultra-wideband communication system as 3.1-10.6GHz, and was used for civil use, but nowadays, the ultra-wideband technology is widely used in the fields of high-precision positioning, wireless communication, wireless sensor networks, radar, monitoring, even medical aspects and the like due to the advantages of ultra-wideband bandwidth, high transmission rate, strong anti-multipath interference capability and the like, but in the wide band of the ultra-wideband antenna 3.1-10.6GHz, other fields such as wireless local area networks (W L AN:5.15-5.35GHz, 5.725-5.825), wireless metropolitan area networks (WIMAX: 3.4-3.69GHz, 5.25-5.85GHz), 5G communication frequency bands (3.3-3.6GHz, 4-5 GHz) and the like), so that the notch interference of the broadband communication systems generally needs to be eliminated, and the notch interference of the broadband communication systems is a plurality of the existing notch interference is a serious requirement of the broadband communication band.
Disclosure of Invention
In view of this, the invention provides a broadband dual-notch ultra-wideband antenna, which has the advantages of simple structure, miniaturization and wide notch frequency band.
In order to achieve the purpose, the technical scheme of the invention is as follows: a broadband double-trapped wave ultra-wideband antenna comprises a dielectric substrate, a radiating element, a microstrip feeder line and a metal ground plate.
The radiating unit is covered on the upper surface of the dielectric substrate, and the metal grounding plate is covered on the lower surface of the dielectric substrate.
The microstrip feeder line is covered on the upper surface of the dielectric substrate and is in contact connection with the radiation unit.
An open resonant ring is etched on the microstrip feed line.
Further, the radiating unit is of a regular octagonal structure.
The microstrip feeder line is in a trapezoidal structure.
The upper bottom of the trapezoid of the microstrip feeder line is connected with one side of the radiation unit.
Furthermore, the open resonant ring is an annular slot etched on the microstrip feed line.
The open resonant ring shape is composed of a left vertical gap, a middle vertical gap, a right vertical gap, an upper transverse gap, a lower transverse gap, an inner transverse gap and two transverse T-shaped gaps.
The upper transverse gap and the lower transverse gap are parallel to the inner transverse gap.
The length of the upper transverse gap is smaller than that of the lower transverse gap; the upper transverse gap is aligned with the left side of the lower transverse gap, and the left sides of the upper transverse gap and the lower transverse gap are communicated through a left vertical gap.
The inner transverse gap is positioned between the upper transverse gap and the lower transverse gap and is closer to the lower transverse gap.
The right side of the upper transverse gap is communicated with the inner transverse gap through the middle vertical gap.
The middle vertical gap is communicated with two transverse T-shaped gaps; the two transverse T-shaped gaps are the same in size and are parallel.
The right vertical gap is communicated with the right side of the lower transverse gap; the length of the right vertical gap is smaller than that of the left vertical gap and the middle vertical gap.
Furthermore, the transverse T-shaped gap consists of a T-shaped transverse gap and a T-shaped vertical gap, wherein the T-shaped transverse gap is perpendicular to the center of the T-shaped vertical gap, and the width of the T-shaped transverse gap is the same as that of the T-shaped vertical gap; the T-shaped transverse seam is vertically communicated with the middle vertical seam.
Has the advantages that:
the double-trapped-wave ultra-wideband antenna provided by the invention realizes the ultra-wideband performance through the structural design of the octagonal radiation patch, the trapezoidal micro-strip feeder line and the defected ground. The invention also realizes the ultra-wideband performance with two trapped waves by a technical means of etching the improved open resonant ring on the feeder line. The second notch frequency band generated by the improved split-ring structure provided by the invention is obviously widened, and the relative bandwidth of 19% is realized.
Drawings
Fig. 1 is a schematic diagram of a dual-notch ultra-wideband antenna according to an embodiment of the present invention;
FIG. 2(a) is a top view of the surface patch structure on the dielectric substrate of the present invention, and FIG. 2(b) is a microstrip feed line of the etching-modified open resonator ring structure proposed by the present invention;
fig. 3 is a reflection coefficient graph of a dual-notch ultra-wideband antenna provided by an embodiment of the invention.
FIGS. 4(a) and (b) are H-plane and E-plane radiation patterns at 3.5GHz according to an embodiment of the invention; FIGS. 4(c) and (d) are H-plane and E-plane radiation patterns at a frequency of 6.5GHz according to an embodiment of the present invention; FIGS. 4(E) and (f) are H-plane and E-plane radiation patterns at a frequency of 9GHz according to an embodiment of the present invention;
reference numerals: 1-an octagonal antenna radiating element; 2-a trapezoidal microstrip feed line; 3-a metal ground plate; 4-a dielectric substrate; 5-an open resonator ring structure etched on the microstrip feed line.
Detailed Description
The invention is described in detail below by way of example with reference to the accompanying drawings.
The invention provides a broadband double-notch ultra-wideband antenna, as shown in fig. 1, comprising: dielectric substrate 4, radiating element 1, microstrip feeder 2 and metal ground plate 3.
The radiating element 1 is covered on the upper surface of the dielectric substrate 4, and the metal grounding plate 3 is covered on the lower surface of the dielectric substrate 4.
The microstrip feed line 2 is covered on the upper surface of the dielectric substrate 4, and the microstrip feed line 2 is in contact connection with the radiation unit 1. Fig. 2(a) shows a top view of the top surface patch structure of the dielectric substrate of the present invention.
An open resonant ring is etched on the microstrip feeder 2.
In the embodiment of the invention, the radiation unit 1 is in a regular octagonal structure; the radiating unit of the antenna is an octagonal patch, is obtained by cutting corners at four corners on the basis of a rectangular patch, and realizes the impedance matching of 3.1-10.6GHz and the miniaturization of the antenna; the microstrip feeder line 2 is in a trapezoidal structure; the upper bottom of the trapezoid of the microstrip feed line 2 is connected with one side of the radiation unit 1. The lower edge of the octagonal patch is connected with a trapezoidal microstrip line, the microstrip line is of a trapezoidal structure, broadband matching is achieved, an improved open resonant ring structure is etched on the microstrip feeder line, and the double-trapped wave characteristic is achieved; the dielectric substrate of the antenna is made of a material with a dielectric constant of 2.2, and the thickness of the dielectric substrate is 0.8 mm; the metal floor is arranged on the other side of the dielectric substrate.
The open-ended resonant ring is an annular slot etched on the microstrip feed line 2, as shown in fig. 2 (b); the open resonant ring shape is composed of a left vertical gap, a middle vertical gap, a right vertical gap, an upper transverse gap, a lower transverse gap, an inner transverse gap and two transverse T-shaped gaps.
The upper transverse gap and the lower transverse gap are parallel to the inner transverse gap.
The length of the upper transverse gap is smaller than that of the lower transverse gap; the upper transverse gap is aligned with the left side of the lower transverse gap, and the left sides of the upper transverse gap and the lower transverse gap are communicated through a left vertical gap.
The inner transverse gap is positioned between the upper transverse gap and the lower transverse gap and is closer to the lower transverse gap.
The right side of the upper transverse gap is communicated with the inner transverse gap through the middle vertical gap.
The middle vertical gap is communicated with two transverse T-shaped gaps; the two transverse T-shaped gaps are the same in size and are parallel.
The right vertical gap is communicated with the right side of the lower transverse gap; the length of the right vertical gap is smaller than that of the left vertical gap and the middle vertical gap.
In the embodiment of the invention, the transverse T-shaped gap consists of a T-shaped transverse gap and a T-shaped vertical gap, wherein the T-shaped transverse gap is vertical to the center of the T-shaped vertical gap, and the width of the T-shaped transverse gap is the same as that of the T-shaped vertical gap;
the T-shaped transverse seam is vertically communicated with the middle vertical seam.
The length of the dielectric substrate 4 is b, the width of the dielectric substrate is a, the length of the radiating element 1 is ls, two right-angle sides of a right-angle triangle corresponding to each side of the radiating element are lp and lp1 respectively, the upper bottom edge of the microstrip feeder 2 is w1, the lower bottom edge of the microstrip feeder is w, and the total length of the microstrip feeder is lf; the length of the upper transverse slit is w21, the length of the lower transverse slit is w3, the length of the inner transverse slit is w2, the length of the left vertical slit is l1, the length of the right vertical slit is l3, and the interval between the inner transverse slit and the lower transverse slit is m 1; alternatively, in one embodiment of the present invention, different notch frequency bands may be created by adjusting the structural dimensions of the straight shaped slot l1, the slot pitch m1, the distance l4 between the T-shaped slot and the lower edge of the outer ring, the widths w3 and w21 of the outer ring, and the widths d1 and d2 of the slot.
TABLE 1 Dual trapped wave UWB antenna structural dimensions
The specific parameter values shown in table 1 are specific size values of AN embodiment of the antenna, fig. 3 and 4 are a reflection coefficient curve and H-plane and E-plane radiation patterns of the embodiment of the present invention, respectively, fig. 3 is a reflection coefficient curve of the embodiment of the present invention, and it can be seen from the reflection coefficient graph that the antenna generates notches in the 3.7-4.5GHz band and the 7.02-8.5GHz band, covering the entire W L AN band and the X-band satellite communication band, and the relative bandwidth of the second notch band reaches 19%. fig. 4(a) and (b) are H-plane and E-plane radiation patterns of the embodiment of the present invention at 3.5GHz, fig. 4(c) and (d) are H-plane and E-plane radiation patterns of the embodiment of the present invention at 6.5GHz, and fig. 4(E) and (f) are H-plane and E-plane radiation patterns of the embodiment of the present invention at 9GHz, as can be understood from fig. 3 and 4, the antenna unit provided by the present invention satisfies the requirements of a dual notch antenna, and the ultra-wide band.
In summary, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (4)
1. A wideband dual notch ultra wideband antenna, comprising: the antenna comprises a dielectric substrate (4), a radiation unit (1), a microstrip feeder line (2) and a metal grounding plate (3);
the radiating unit (1) is covered on the upper surface of the dielectric substrate (4), and the metal grounding plate (3) is covered on the lower surface of the dielectric substrate (4);
the microstrip feeder line (2) is covered on the upper surface of the dielectric substrate (4), and the microstrip feeder line (2) is in contact connection with the radiation unit (1);
an opening resonance ring is etched on the microstrip feeder line (2).
2. An antenna according to claim 1, characterized in that the radiating element (1) is a regular octagonal structure;
the microstrip feeder line (2) is of a trapezoidal structure;
the upper bottom of the trapezoid of the microstrip feeder line (2) is connected with one side of the radiation unit (1).
3. The antenna according to claim 1, characterized in that the open resonator ring is an annular slot etched on the microstrip feed line (2);
the open resonant ring is composed of a left vertical gap, a middle vertical gap, a right vertical gap, an upper transverse gap, a lower transverse gap, an inner transverse gap and two transverse T-shaped gaps;
the upper transverse gap and the lower transverse gap are parallel to the inner transverse gap;
the length of the upper transverse gap is smaller than that of the lower transverse gap; the upper transverse gap is aligned with the left side of the lower transverse gap, and the left sides of the upper transverse gap and the lower transverse gap are communicated through a left vertical gap;
the inner transverse gap is positioned between the upper transverse gap and the lower transverse gap and is closer to the lower transverse gap;
the right side of the upper transverse gap is communicated with the inner transverse gap through the middle vertical gap;
the middle vertical gap is communicated with two transverse T-shaped gaps; the two transverse T-shaped gaps are the same in size and are parallel;
the right vertical gap is communicated with the right side of the lower transverse gap; the length of the right vertical gap is smaller than that of the left vertical gap and that of the middle vertical gap.
4. The antenna of claim 3, wherein the transverse T-shaped slot is composed of a T-shaped transverse slot and a T-shaped vertical slot, wherein the T-shaped transverse slot is perpendicular to the center of the T-shaped vertical slot, and the T-shaped transverse slot has the same slot width as the T-shaped vertical slot;
the T-shaped transverse seam is vertically communicated with the middle vertical seam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202010174006.6A CN111478027A (en) | 2020-03-13 | 2020-03-13 | Broadband double-trapped wave ultra-wideband antenna |
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| CN202010174006.6A CN111478027A (en) | 2020-03-13 | 2020-03-13 | Broadband double-trapped wave ultra-wideband antenna |
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| CN111478027A true CN111478027A (en) | 2020-07-31 |
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| CN202010174006.6A Pending CN111478027A (en) | 2020-03-13 | 2020-03-13 | Broadband double-trapped wave ultra-wideband antenna |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113422202A (en) * | 2021-06-22 | 2021-09-21 | 维沃移动通信有限公司 | Antenna unit and electronic device |
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| CN102570023A (en) * | 2012-03-01 | 2012-07-11 | 西安电子科技大学 | Ultra wideband antenna with four-notched band characteristics |
| US20120223869A1 (en) * | 2011-03-02 | 2012-09-06 | Industry-University Cooperation Foundation Hanyang University | Microstrip patch antenna including planar metamaterial and method of operating microstrip patch antenna including planar metamaterial |
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2020
- 2020-03-13 CN CN202010174006.6A patent/CN111478027A/en active Pending
Patent Citations (5)
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| US20120223869A1 (en) * | 2011-03-02 | 2012-09-06 | Industry-University Cooperation Foundation Hanyang University | Microstrip patch antenna including planar metamaterial and method of operating microstrip patch antenna including planar metamaterial |
| CN102570023A (en) * | 2012-03-01 | 2012-07-11 | 西安电子科技大学 | Ultra wideband antenna with four-notched band characteristics |
| CN104681924A (en) * | 2013-11-27 | 2015-06-03 | 哈尔滨黑石科技有限公司 | Dual trapped wave flat ultra wideband antenna |
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| CN108767460A (en) * | 2018-05-23 | 2018-11-06 | 辽宁工程技术大学 | A kind of ultra-wideband antenna with three trap characteristics |
Non-Patent Citations (2)
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| S. BAO, W. REN, L. GE, Z. XUE AND W. LI: "A Novel Notch Antenna Based on Improved Single CSRR", 《2019 PHOTONICS & ELECTROMAGNETICS RESEARCH SYMPOSIUM - FALL (PIERS - FALL)》 * |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113422202A (en) * | 2021-06-22 | 2021-09-21 | 维沃移动通信有限公司 | Antenna unit and electronic device |
| CN113422202B (en) * | 2021-06-22 | 2023-09-01 | 维沃移动通信有限公司 | Antenna unit and electronic device |
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