CN111466686A - Metal reflective hollow-out embedded structure ornament of rhinestone or crystal accessory and processing method thereof - Google Patents

Metal reflective hollow-out embedded structure ornament of rhinestone or crystal accessory and processing method thereof Download PDF

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Publication number
CN111466686A
CN111466686A CN201911347771.7A CN201911347771A CN111466686A CN 111466686 A CN111466686 A CN 111466686A CN 201911347771 A CN201911347771 A CN 201911347771A CN 111466686 A CN111466686 A CN 111466686A
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layer
rhinestone
copper
metal
titanium
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黄向文
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    • AHUMAN NECESSITIES
    • A44HABERDASHERY; JEWELLERY
    • A44CPERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C25/00Miscellaneous fancy ware for personal wear, e.g. pendants, crosses, crucifixes, charms
    • AHUMAN NECESSITIES
    • A44HABERDASHERY; JEWELLERY
    • A44CPERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C17/00Gems or the like
    • AHUMAN NECESSITIES
    • A44HABERDASHERY; JEWELLERY
    • A44CPERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C17/00Gems or the like
    • A44C17/007Special types of gems
    • AHUMAN NECESSITIES
    • A44HABERDASHERY; JEWELLERY
    • A44CPERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C17/00Gems or the like
    • A44C17/02Settings for holding gems or the like, e.g. for ornaments or decorations
    • AHUMAN NECESSITIES
    • A44HABERDASHERY; JEWELLERY
    • A44CPERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C17/00Gems or the like
    • A44C17/04Setting gems in jewellery; Setting-tools
    • AHUMAN NECESSITIES
    • A44HABERDASHERY; JEWELLERY
    • A44CPERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C27/00Making jewellery or other personal adornments

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Adornments (AREA)

Abstract

The invention discloses a rhinestone or crystal accessory metal reflective hollowed-out embedded structure ornament and a processing method thereof, wherein the ornament comprises a rhinestone, a bottoming reflective conductive layer and a metal outer layer are sequentially and closely attached to the outer surface of the rhinestone to form a semi-finished product, and a plurality of hollowed-out pattern structures are arranged on the semi-finished product aiming at an embedded carrier consisting of the bottoming reflective conductive layer and the metal outer layer, so that part of the surface of the rhinestone is exposed through the hollowed-out pattern structures to form the rhinestone ornament with metal level texture; the advantage is that each layer of the mosaic carrier is arranged in a wrapping way, so that the surface of the rhinestone is not damaged; all layers of the embedding carrier are sequentially arranged in a clinging manner, so that clothes and the like cannot be hooked, and skin cannot be scratched; the rhinestone is firmly fixed by the embedded carrier and cannot fall off; no gap is reserved between the embedding carrier and the rhinestone, so that dirt and dirt can not be hidden; the arrangement of each layer of the embedded carrier does not need a mould and is not influenced by the appearance of the rhinestone; and the metal outer layer does not need polishing and grinding treatment, so that the production cost is low.

Description

Metal reflective hollow-out embedded structure ornament of rhinestone or crystal accessory and processing method thereof
Technical Field
The invention relates to an ornament and a processing technology thereof, in particular to a metal reflective hollowed-out embedded ornament of a crystal accessory and a processing method thereof.
Background
The ingredients of the crystal diamond, the crystal accessory and the crystal pendant in various shapes are basically the same as the manufacturing method, most of the crystal diamond, the crystal accessory and the crystal pendant are formed by grinding facet or smooth surface of diamond after being pressed and molded, and the crystal diamond, the crystal accessory and the crystal pendant can be made into accessory accessories. The crystal diamond, also known as crystal diamond and rhinestone, is an accessory of ornaments obtained by cutting artificial crystal glass into diamond facets, and is popular because the crystal diamond is more economical and has a diamond-like visual effect.
The rhinestones are not used independently, are often used after being processed and decorated by metal or combined after being welded with required metal accessories, are usually fixed on metal brackets or in metal bound edges in an embedding mode to form rhinestone ornaments, and are applied to various products such as clothes, hair clips, necklaces and the like. Be applied to dress, the water brill ornaments on hairpin include metal bracket and water brill usually, metal bracket has one with the bottom matched with cavity of water brill, metal bracket evenly is provided with a plurality of claws all around and detains, the bottom surface of water brill is plated and is equipped with silver layer or aluminium lamination or titanium layer and regard as the visual effect of reflector layer in order to increase the water brill, during the installation with the bottom embedding cavity of water brill, press the claw and detain the front that makes the claw buckle detain the water brill, adopt the claw to inlay the mode promptly, however this kind of water brill ornaments exist following problem: 1) when external force is applied to press the claw button, the front surface of the rhinestone can be damaged, so that the rhinestone ornament is scrapped; 2) the free end of the claw buckle is easy to hook clothes and the like, so that the claw buckle is tilted, the rhinestone shakes, the clothes are damaged, and even the skin of a user is injured; 3) since too large a claw buckle may result in that the rhinestone cannot be inserted, the claw buckle is generally designed to be thin or small to leave enough space for inserting the rhinestone, and this may result in insufficient gripping force of the claw buckle, in which case the rhinestone is easily separated from the metal bracket; 4) a gap exists between the mouth of the concave cavity and the rhinestone, and the gap is easy to store dirt and dirty, thereby influencing the beauty of the rhinestone ornament. Be applied to water brill ornaments of necklace and include that metal bordures and water brill usually, water brill inlays in metal bordures, is provided with a rings on the metal bordure, adopts the package to inlay the mode promptly, however this kind of water brill ornaments have following problem: 1) when external force is applied to inlay the rhinestone into the metal edge cover, two surfaces of the rhinestone can be damaged, so that the rhinestone ornament is scrapped; 2) a gap exists between the metal edge covering and the edge of the rhinestone, and dirt is easily hidden in the gap, so that the attractiveness of the rhinestone ornament is affected. In addition, the rhinestone ornaments are limited by the appearance of the rhinestones no matter what rhinestone embedding method is adopted, and the shapes of the metal brackets or the metal binding edges are changed along with the appearance of the rhinestones, so that a large amount of mould cost for manufacturing the metal brackets and the metal binding edges is generated.
Disclosure of Invention
The invention aims to solve the technical problem of providing a water diamond or crystal accessory metal light-reflecting hollow-out embedded structure ornament and a processing method thereof, wherein the water diamond or crystal accessory metal light-reflecting hollow-out embedded structure ornament does not damage two surfaces of the water diamond or crystal accessory in the embedding process of the water diamond or crystal accessory, a gap which is easy to store dirt does not exist between the water diamond or crystal accessory and an embedding carrier, the embedding carrier does not tilt, the water diamond or crystal accessory does not fall off, and the production cost is low; the processing method has simple process.
The technical scheme adopted by the invention for solving the technical problems is as follows: the utility model provides a water bores or quartzy accessory metal reflection of light fretwork mosaic structure ornaments, includes water bores or quartzy accessory, its characterized in that: the outer surface of the crystal accessory or the crystal accessory is sequentially provided with a bottoming reflective conducting layer and a metal outer layer in a clinging manner to form a semi-finished product, and the semi-finished product is provided with a plurality of hollow pattern structures aiming at an embedding carrier formed by the bottoming reflective conducting layer and the metal outer layer, so that part of the surface of the crystal accessory or the crystal accessory is exposed through the hollow pattern structures to form the metal reflective hollow embedded structure ornament with metal level texture.
The bottoming reflecting conducting layer consists of a bottoming layer, a silver reflecting layer and a copper conducting layer which are sequentially arranged from inside to outside, the bottoming layer is formed by vacuum plating a layer of titanium or vacuum plating a layer of silicon or vacuum plating a layer of chromium on the outer surface of the crystal accessory, the silver reflecting layer is formed by vacuum plating a layer of silver on the outer surface of the bottoming layer, the copper conducting layer is formed by vacuum plating a layer of copper on the outer surface of the silver reflecting layer, and the metal layer is formed by electrodeposition of a layer of copper on the outer surface of the copper conducting layer. In the method, a titanium or silicon or chromium layer or other materials well combined with glass can be vacuum-plated on the outer surface of the rhinestone to form a bottom layer, and in practical application, the chromium is not environment-friendly enough and is not suitable for being used on ornaments, so the titanium or silicon can be preferably selected; because the titanium base coat formed by vacuum titanium plating has better bonding property with the glass diamond, the titanium layer is selected as the base coat; silver has a good light reflecting effect, so that a silver layer is selected as a light reflecting layer; copper has a good conductive effect, so a copper layer is selected as a conductive layer; because the titanium priming layer, the silver reflecting layer and the copper conducting layer are formed by vacuum plating, the thickness of the titanium priming layer, the silver reflecting layer and the copper conducting layer formed by vacuum plating can only reach micron level at most, and the rhinestone ornament is usually used after various accessories are welded, a metal outer layer (micron level to millimeter level) is electrodeposited outside the copper conducting layer in order to weld various accessories, and the metal layer with the thickness can highlight the metal level texture of the rhinestone ornament; furthermore, the metal outer layer can be easily electrodeposited onto the copper conductive layer. Here, the thickness of the titanium primer layer can be set to be nano-scale, and it is not desirable to be too thick because if it is too thick, it will affect the silver reflective layer; the thicknesses of the silver reflecting layer and the copper conducting layer can be set to be micron-sized; the thickness of the metal outer layer may be set to a micrometer to millimeter level.
The bottoming reflecting conducting layer is composed of a titanium bottoming reflecting layer and a copper conducting layer which are sequentially arranged from inside to outside, the titanium bottoming reflecting layer is formed by vacuum plating a layer of titanium on the outer surface of the crystal accessory or the rhinestone, the copper conducting layer is formed by vacuum plating a layer of copper on the outer surface of the titanium bottoming reflecting layer, and the metal outer layer is formed by electrodeposition of a layer of copper on the outer surface of the copper conducting layer. Because the vacuum titanium plating layer has better associativity with the glass rhinestone and can be made into various colors to play a role in reflecting light, the vacuum titanium plating layer has both priming and reflecting functions, so the titanium layer is selected as the priming reflecting layer; copper has a good conductive effect, so a copper layer is selected as a conductive layer; because the titanium bottoming reflecting layer and the copper conducting layer are both formed by vacuum plating, the thickness of the titanium bottoming reflecting layer and the copper conducting layer formed by vacuum plating can only reach micron level to the maximum, and the rhinestone ornament is usually used after various accessories are welded, a metal outer layer (micron level to millimeter level) is electrodeposited outside the copper conducting layer in order to weld various accessories, and the metal layer texture of the rhinestone ornament can be highlighted by the thicker metal outer layer; furthermore, the metal outer layer can be easily electrodeposited onto the copper conductive layer. The titanium priming reflecting layer plays a role in priming and reflecting light, so that the thickness can be set to be in a micron order; the thickness of the copper conducting layer can be set to be micron-sized; the thickness of the metal outer layer may be set to a micrometer to millimeter level.
The bottoming reflection of light conducting layer constitute by bottoming layer and the silver reflection of light conducting layer that from interior to exterior set gradually, the bottoming layer be in the water drill or the surface of crystal accessory on vacuum plating one deck titanium or vacuum plating one deck silicon or vacuum plating one deck chromium form, the silver reflection of light conducting layer be in the surface of bottoming layer on vacuum plating one deck silver form, the metal outer be in the surface of silver reflection of light conducting layer on the electrodeposition one deck copper form. In the method, a titanium or silicon or chromium layer or other materials well combined with glass can be vacuum-plated on the outer surface of the rhinestone to form a bottom layer, and in practical application, the chromium is not environment-friendly enough and is not suitable for being used on ornaments, so the titanium or silicon can be preferably selected; because the titanium base coat formed by vacuum titanium plating has better bonding property with the glass diamond, the titanium layer is selected as the base coat; silver has a good light reflecting effect and good electric conduction effect, so that a silver layer is selected as a light reflecting conductive layer; because the titanium priming layer and the silver reflecting conducting layer are both formed by vacuum plating, the thickness of the titanium priming layer and the silver reflecting conducting layer formed by vacuum plating can only reach micron level to the maximum, and the rhinestone ornament is usually used after various accessories are welded, a metal outer layer (micron level to millimeter level) is electrodeposited outside the silver reflecting conducting layer in order to weld various accessories, and the metal layer texture of the rhinestone ornament can be highlighted by the thicker metal outer layer; in addition, the metal outer layer can be easily electrodeposited onto the silver light reflecting conductive layer. Here, the thickness of the titanium primer layer can be set to be nano-scale, and it is not desirable to be too thick because if it is too thick, it will affect the silver light reflecting conductive layer; the thickness of the silver light-reflecting conducting layer can be set to be micron-sized; the thickness of the metal outer layer may be set to a micrometer to millimeter level.
The bottoming reflection of light conducting layer constitute by bottoming layer and the silver reflection of light conducting layer that from interior to exterior set gradually, the bottoming layer be in the rhinestone or the surface of crystal accessory on vacuum plating one deck titanium or vacuum plating one deck silicon or vacuum plating one deck chromium form, the silver reflection of light conducting layer be in the surface of bottoming layer on vacuum plating one deck silver form, the metal outer be in the surface of silver reflection of light conducting layer on the electrodeposition one deck silver form.
Before the metal outer layer is electrodeposited, a layer of alkali copper or copper pyrophosphate is electroplated to be used as a transition plating layer. Since the alkali copper contains cyanide, it can be omitted.
The hollow pattern structure is formed by etching the inlaid carrier after spraying etching protective ink or electrophoretic etching protective paint. For damascene carriers of different structures, the etching process is slightly different: the inlaying carrier comprises a titanium priming layer, a silver reflecting layer, a copper conducting layer and a metal outer layer, wherein the metal outer layer and the copper conducting layer are etched by hydrochloric acid and ferric trichloride or commercially available copper etching solution, then the silver reflecting layer is etched by silver etching solution or dilute nitric acid solution, after a protective layer is removed, sodium hydroxide aqueous solution with the concentration of about 3 percent is added with hydrogen peroxide with the concentration of about 30 percent, and the hydrogen peroxide with the weight percentage of about 15 percent is added into the sodium hydroxide aqueous solution to form etching solution for etching the titanium priming layer; the inlaying carrier composed of a titanium bottoming reflecting layer, a copper conducting layer and a metal outer layer is characterized in that hydrochloric acid and ferric trichloride are adopted or commercially available copper etching liquid is adopted to etch the metal outer layer and the copper conducting layer, after a protective layer is removed, sodium hydroxide aqueous solution with the concentration of about 3% is adopted to add hydrogen peroxide with the concentration of about 30%, and the hydrogen peroxide with the weight percentage of about 15% is added into the sodium hydroxide aqueous solution to form etching liquid to etch the titanium bottoming reflecting layer; the carrier of inlaying that is formed by titanium prime coat, silver reflecting conducting layer and metal outer layer, if the metal outer layer uses copper, use hydrochloric acid and ferric trichloride or use the commercial copper etching solution to etch the metal outer layer first, then use silver etching solution or dilute nitric acid solution to etch the silver reflecting conducting layer, remove protective layer and then use the sodium hydroxide aqueous solution with the concentration of about 3% to add the hydrogen peroxide with the concentration of about 30%, add the hydrogen peroxide with the weight percent of about 15% into the sodium hydroxide aqueous solution to form the etching solution to etch the titanium prime coat; if the metal outer layer is made of silver, the metal outer layer is etched by directly adopting silver etching solution or dilute nitric acid solution without adopting hydrochloric acid and ferric trichloride or adopting commercially available copper etching solution.
The hollow pattern structure is in the same shape with the surface of the crystal accessory or the crystal accessory. The hollow pattern structure can be designed according to the rhinestone ornament to be obtained and can be patterns with various shapes, and if the hollow pattern structure with the same shape as the surface of the rhinestone is arranged on one surface of the rhinestone, the embedded carrier with the hollow pattern structure has the function of the existing metal bracket; if the hollow pattern structures with the same shapes as the surfaces of the rhinestones are arranged on the two surfaces of the rhinestones, the embedded carrier with the hollow pattern structures has the function of the existing metal edge covering; the hollow pattern structure can also be in various shapes such as laces or flowers, plants and animals.
The periphery of the hollow pattern structure is designed into various lace shapes. The periphery of the hollow pattern structure is designed into a lace shape, so that the integral aesthetic feeling can be improved.
And the region of the mosaic carrier, which is not provided with the hollow pattern structure, is subjected to tin welding or laser welding to form a metal fitting. Can be made into necklace by welding metal fittings.
And decorative plating is arranged on the area of the mosaic carrier, which is not provided with the hollow pattern structure. The decorative plating can be gold or imitation gold or platinum or imitation platinum decorative plating.
The crystal accessory or the crystal accessory is replaced by an ornament jewel or an ornament zircon.
The utility model provides a water bores or quartzy accessory metal reflection of light fretwork mosaic structure ornaments, includes water bores or quartzy accessory, its characterized in that: the crystal accessory is characterized in that a reflective conducting layer and a metal outer layer are sequentially arranged on the outer surface of the crystal accessory or the crystal accessory in a clinging manner after the crystal accessory or the crystal accessory is bombarded by a bombardment power supply to form a semi-finished product, and a plurality of hollow pattern structures are arranged on the semi-finished product aiming at an embedding carrier formed by the reflective conducting layer and the metal outer layer, so that part of the surface of the crystal accessory is exposed through the hollow pattern structures to form the metal reflective hollow-out embedding structure ornament with metal level texture.
The light reflecting conducting layer is formed by a silver reflecting layer and a copper conducting layer which are sequentially arranged from inside to outside, the silver reflecting layer is formed by vacuum plating a layer of silver on the outer surface of the crystal accessory after the crystal accessory is bombarded by a bombardment power source, the copper conducting layer is formed by vacuum plating a layer of copper on the outer surface of the silver reflecting layer, and the metal layer is formed by electrodeposition of a layer of copper on the outer surface of the copper conducting layer. The rhinestone is bombarded by a bombardment power source in a vacuum coating machine, so that a bottom layer is not made of titanium, and a silver layer is directly plated on the outer surface of the rhinestone in a vacuum manner to form a silver reflecting layer.
The light-reflecting conducting layer is formed by electroplating a layer of silver on the outer surface of the rhinestone or the crystal accessory after bombardment by a bombardment power source in vacuum, and the metal outer layer is formed by electrodepositing a layer of copper on the outer surface of the silver light-reflecting conducting layer. Bombarding the rhinestone by using a bombardment power supply in a vacuum coating machine, so that a bottom layer is not made of titanium, and directly plating a silver layer on the outer surface of the rhinestone in vacuum to form a silver reflective conductive layer; the silver light reflecting conductive layer may also be replaced by a copper layer or other single metal layer or alloy layer.
The processing method of the metal reflective hollowed-out mosaic structure ornament of the crystal or crystal accessory is characterized by comprising the following steps of: the method comprises the following steps:
the method comprises the following steps: a layer of titanium is plated on the outer surface of the rhinestone or the crystal accessory in a vacuum mode by utilizing a vacuum plating film technology to form a transparent titanium priming coat;
step two: a layer of silver is plated on the outer surface of the titanium priming layer in a vacuum mode to be in an opaque state through a vacuum plating film technology, and an opaque silver reflecting layer is formed;
step three: a layer of copper is electroplated on the outer surface of the silver reflecting layer in a vacuum manner by utilizing a vacuum electroplating film technology to form a copper conducting layer;
step four: using an electrodeposition technology, taking the copper conducting layer as a cathode, and electrodepositing a layer of copper on the outer surface of the copper conducting layer by means of current to form a metal outer layer, thus obtaining an embedded carrier consisting of a titanium priming layer, a silver reflecting layer, the copper conducting layer and the metal outer layer, and a semi-finished product consisting of a rhinestone or a crystal accessory and the embedded carrier wrapped outside the rhinestone or the crystal accessory;
step five: spraying etching protection ink or electrophoretic etching protection paint on the semi-finished mosaic carrier, and drying to form a protection layer;
step six: drawing on the protective layer according to the designed pattern by using a laser marking machine;
step seven: and placing the semi-finished product which is mapped into an etching machine, etching the inlaid carrier of the mapped semi-finished product by using a copper etching solution, then etching by using a silver etching solution or a dilute nitric acid solution, removing the protective layer and then etching again by using a titanium etching solution if the titanium priming layer is not completely removed after etching, forming a hollow pattern structure which is the same as the designed pattern on the inlaid carrier after etching is finished, and exposing part of the surface of the rhinestone or the crystal accessory through the hollow pattern structure to form the metal light-reflecting hollow inlaid structure ornament with metal level texture.
The thickness of the titanium priming layer is 0.01-0.5 micron, the thickness of the silver reflecting layer is 0.05-5 micron, the thickness of the copper conducting layer is 0.2-8 micron, the thickness of the metal outer layer is more than 0.01 millimeter, the titanium priming layer, the silver reflecting layer and the copper conducting layer are electroplated in vacuum by adopting a multi-arc ion magnetron sputtering film plating machine, and the technological parameters are that the vacuum degree of a vacuum chamber is 8 × 10-3Pa, and regulating the vacuum degree and the product color of the vacuum chamber by using working gas with the flow rate of 20 sccm-150 sccm; and the region of the mosaic carrier, which is not provided with the hollow pattern structure, is subjected to tin welding or laser welding to form a metal fitting.
The processing method of the metal reflective hollowed-out mosaic structure ornament of the crystal or crystal accessory is characterized by comprising the following steps of: the method comprises the following steps:
the method comprises the following steps: a layer of titanium is electroplated on the outer surface of the rhinestone or the crystal accessory in a vacuum mode to be in an opaque state by utilizing a vacuum electroplating film technology, and an opaque titanium priming reflecting layer is formed;
step two: vacuum plating a layer of copper on the outer surface of the titanium priming reflecting layer by using a vacuum plating film technology to form a copper conducting layer;
step three: using an electrodeposition technology, taking the copper conducting layer as a cathode, and electrodepositing a layer of copper on the outer surface of the copper conducting layer by means of current to form a metal outer layer, thus obtaining an embedded carrier consisting of a titanium priming layer, a silver reflecting layer, the copper conducting layer and the metal outer layer, and a semi-finished product consisting of a rhinestone or a crystal accessory and the embedded carrier wrapped outside the rhinestone or the crystal accessory;
step four: spraying etching protection ink or electrophoretic etching protection paint on the semi-finished mosaic carrier, and drying to form a protection layer;
step five: drawing on the protective layer according to the designed pattern by using a laser marking machine;
step six: and placing the semi-finished product which is mapped into an etching machine, firstly etching the embedding carrier of the semi-finished product which is mapped by using copper etching liquid, then removing the protective layer, then etching again by using titanium etching liquid, forming a hollow pattern structure which is the same as the designed pattern on the embedding carrier after the etching is finished, and exposing partial surface of the rhinestone or the crystal accessory through the hollow pattern structure to form the metal light-reflecting hollow embedding structure ornament with metal level texture.
The thickness of the titanium bottom reflecting layer is 0.1-5 microns, the thickness of the copper conducting layer is 0.2-8 microns, the thickness of the metal outer layer is more than 0.01 mm, the titanium bottom reflecting layer and the copper conducting layer are vacuum-plated by adopting a multi-arc ion magnetron sputtering coating machine, and the technological parameters are that the vacuum degree of a vacuum chamber is 8 × 10-3Pa, and regulating the vacuum degree and the color of the vacuum chamber by using working gas with the flow rate of 20 sccm-150 sccm; the inlaying carrier is not provided with metal fittings welded by tin or laser in the area of the hollow pattern structure, or the metal fittings are glued on the titanium priming reflecting layer or directly glued on the materials before the priming layer before the vacuum copper electroplating conducting layer.
Compared with the prior art, the invention has the advantages that:
1) the metal light-reflecting hollowed-out mosaic structure ornament of the rhinestone or crystal accessory is characterized in that a bottoming light-reflecting conducting layer is arranged on the outer surface of the rhinestone or crystal accessory in a clinging manner, a metal outer layer is arranged on the outer surface of the bottoming light-reflecting conducting layer in a clinging manner, and a plurality of hollowed-out pattern structures are arranged on an embedding carrier formed by the bottoming light-reflecting conducting layer and the metal outer layer, so that part of the surface of the rhinestone or crystal accessory can be exposed through the hollowed-out pattern structures to form the metal light-reflecting hollowed-out mosaic structure ornament; because all layers of the inlaid carrier are sequentially and closely arranged, clothes and the like cannot be hooked, and skin cannot be scratched; the rhinestone or the crystal accessory is firmly fixed by the embedding carrier, and the rhinestone or the crystal accessory cannot fall off; no gap exists between the embedding carrier and the crystal or crystal accessory, and dirt can not be hidden.
2) The arrangement of each layer of the embedding carrier of the metal reflective hollow-out embedding structure ornament of the crystal accessory does not need a mould and is not influenced by the appearance of the crystal accessory or the crystal accessory; and the metal outer layer does not need polishing and grinding treatment, so that the production cost is low.
3) The processing method of the metal reflective hollowed-out mosaic structure ornament of the rhinestone or crystal accessory only utilizes the existing vacuum electroplating film technology, the electrodeposition technology and the etching technology, the processing process is simple, and the processing cost is low.
Drawings
FIG. 1 is a schematic view of the first embodiment of an outline and structure of a rhinestone metal reflective hollowed-out inlaid structure ornament;
FIG. 2 is a schematic partial cross-sectional view of the rhinestone metal reflective hollowed-out mosaic decoration of the first embodiment;
FIG. 3 is a schematic partial cross-sectional view of the rhinestone metal reflective hollowed-out mosaic decoration of the second embodiment;
fig. 4 is a schematic partial cross-sectional view of the rhinestone metal reflective hollowed-out mosaic structure ornament according to the third embodiment.
Detailed Description
The invention is described in further detail below with reference to the accompanying examples.
The first embodiment is as follows:
the rhinestone metal reflective hollow-out mosaic structure ornament provided by the embodiment comprises a pentagonal rhinestone 1, wherein a bottoming reflective conductive layer 2 and a metal outer layer 3 are sequentially arranged on the outer surface of the rhinestone 1 in a tightly attached manner to form a semi-finished product, and 8 hollow-out pattern structures 4 are arranged on the semi-finished product aiming at a mosaic carrier consisting of the bottoming reflective conductive layer 2 and the metal outer layer 3, so that part of the surface of the rhinestone 1 is exposed through the hollow-out pattern structures 4 to form the rhinestone metal reflective hollow-out mosaic structure ornament with metal level texture.
Preferably, the bottoming reflective conductive layer 2 is composed of a titanium bottoming layer 21, a silver reflective layer 22 and a copper conductive layer 23 which are sequentially arranged from inside to outside, the titanium bottoming layer 21 is formed by vacuum plating a layer of titanium on the outer surface of the rhinestone 1, the silver reflective layer 22 is formed by vacuum plating a layer of silver on the outer surface of the titanium bottoming layer 21, the copper conductive layer 23 is formed by vacuum plating a layer of copper on the outer surface of the silver reflective layer 22, and the metal outer layer 3 is formed by electrodeposition of a layer of copper on the outer surface of the copper conductive layer 23. Because the titanium base layer 21 formed by vacuum titanium plating has better bonding property with the glass rhinestone 1, the titanium layer is selected as the base layer; silver has a good light reflecting effect, so that a silver layer is selected as a light reflecting layer; copper has a good conductive effect, so a copper layer is selected as a conductive layer; because the titanium priming layer 21, the silver reflecting layer 22 and the copper conducting layer 23 are all formed by vacuum plating, the thickness of the titanium priming layer 21, the silver reflecting layer 22 and the copper conducting layer 23 formed by vacuum plating can only reach micron level at most, and the rhinestone ornament is usually used after various accessories are welded, a metal outer layer 3 (micron level to millimeter level) is electrodeposited outside the copper conducting layer 23 in order to weld various accessories, and the thicker metal outer layer 3 can highlight the metal level texture of the rhinestone ornament; furthermore the metal outer layer 3 can be easily electrodeposited onto the copper conducting layer 23. Here, the thickness of the titanium primer layer 21 may be set to be on the order of nanometers, and it is not preferable to be too thick because if it is too thick, it may affect the silver light reflecting layer 22; the thicknesses of the silver light reflecting layer 22 and the copper conductive layer 23 can be set to be in the micron order; the thickness of the metal outer layer 3 may be set to a micrometer to millimeter level.
According to the preferred scheme, the hollow pattern structure 4 is formed by spraying etching protection ink or electrophoretic etching protection paint on the inlaid carrier to form a protection layer and then etching the protection layer, and specifically comprises the following steps: firstly, hydrochloric acid and ferric trichloride are adopted or commercially available copper etching liquid is adopted to etch the metal outer layer 3 and the copper conducting layer 23, then silver etching liquid or dilute nitric acid solution is adopted to etch the silver reflecting layer 22, after the protective layer is removed, sodium hydroxide aqueous solution with the concentration of about 3 percent is adopted to add hydrogen peroxide with the concentration of about 30 percent, and hydrogen peroxide with the weight percentage of about 15 percent is added into the sodium hydroxide aqueous solution to form etching liquid to etch the titanium priming layer 21.
In a preferred scheme, the 1 hollowed-out pattern structures 4 are in the same shape as the surface of the rhinestone 1, namely, in a five-pointed star shape, so that the middle area of one surface of the rhinestone 1 is exposed; 5 five-pointed star-shaped hollow pattern structures 4 are distributed on 5 corners, so that partial areas of the 5 corners of the rhinestone 1 are exposed; the 2 circular hollow pattern structures 4 are distributed on the side face, so that partial areas of the side face of the rhinestone 1 are exposed; the hollow pattern structure 4 can be designed according to the rhinestone ornament to be obtained, and can be patterns with various shapes, for example, if the hollow pattern structure 4 with the same shape as the surface of the rhinestone 1 is arranged on one surface of the rhinestone 1, the embedded carrier with the hollow pattern structure 4 has the function of the existing metal bracket; if the hollow pattern structures 4 with the same shapes as the surfaces of the rhinestones 1 are arranged on the two surfaces of the rhinestones 1, the embedding carrier with the hollow pattern structures 4 has the function of the existing metal edge covering; the hollow pattern structure 4 may also be in various shapes such as laces or flowers and plants.
Preferably, the periphery of the hollow pattern structure 4 is designed to be in various lace shapes. The periphery of the hollow pattern structure 4 is designed into a lace shape to increase the overall aesthetic feeling, such as a wave lace or a flower and grass shape.
Preferably, the metal fittings 5 are soldered or laser welded on the regions of the mosaic carrier not provided with the hollow pattern structures 4. A necklace or the like is made by welding the metal fittings 5.
Example two:
the rhinestone metal reflective hollow-out mosaic structure ornament provided by the embodiment is different from the rhinestone metal reflective hollow-out mosaic structure ornament provided by the embodiment I only in that the structure of the bottoming reflective conductive layer 2 is different, as shown in fig. 3, the bottoming reflective conductive layer 2 is composed of a titanium bottoming reflective layer 24 and a copper conductive layer 23 which are sequentially arranged from inside to outside, the titanium bottoming reflective layer 24 is formed by vacuum plating a titanium layer on the outer surface of the rhinestone 1, the copper conductive layer 23 is formed by vacuum plating a copper layer on the outer surface of the titanium bottoming reflective layer 24, and the metal outer layer 3 is formed by electrically depositing a copper layer on the outer surface of the copper conductive layer 23. Because the vacuum titanium plating layer has better bonding property with the glass rhinestone 1, and the titanium layer can be made into various colors to play a role in reflecting light, the vacuum titanium plating layer has both the priming function and the light reflecting function, so the titanium layer is selected as the priming light reflecting layer; copper has a good conductive effect, so a copper layer is selected as a conductive layer; because the titanium bottoming reflecting layer 24 and the copper conducting layer 23 are both formed by vacuum plating, the thickness of the titanium bottoming reflecting layer 24 and the copper conducting layer 23 formed by vacuum plating can only reach micron level at most, and the rhinestone ornament is usually used after various accessories are welded, a metal outer layer 3 (micron level to millimeter level) is electrodeposited outside the copper conducting layer 23 in order to weld various accessories, and the thicker metal outer layer 3 can highlight the metal level texture of the rhinestone ornament; furthermore the metal outer layer 3 can be easily electrodeposited onto the copper conducting layer 23. Here, the titanium priming reflection layer 24 has double functions of priming and reflection, so the thickness can be set to micron level; the thickness of the copper conductive layer 23 may be set to a micrometer level; the thickness of the metal outer layer 3 may be set to a micrometer to millimeter level.
According to the preferred scheme, the hollow pattern structure 4 is formed by spraying etching protection ink or electrophoretic etching protection paint on the inlaid carrier to form a protection layer and then etching the protection layer, and specifically comprises the following steps: the metal outer layer 3 and the copper conducting layer 23 are etched by hydrochloric acid and ferric trichloride or by a commercially available copper etching solution, after the protective layer is removed, a sodium hydroxide aqueous solution with the concentration of about 3 percent is adopted, hydrogen peroxide with the concentration of about 30 percent is added, and hydrogen peroxide with the weight percentage of about 15 percent is added into the sodium hydroxide aqueous solution to form the etching solution for etching the titanium priming reflecting layer 24.
Example three:
the rhinestone metal reflective hollowed-out mosaic structure ornament provided by the embodiment is different from the rhinestone metal reflective hollowed-out mosaic structure ornament in the first embodiment or the second embodiment only in that the structure of the priming reflective conductive layer 2 is different, as shown in fig. 4, the priming reflective conductive layer 2 is composed of a titanium priming layer 21 and a silver reflective conductive layer 25 which are sequentially arranged from inside to outside, the titanium priming layer 21 is formed by vacuum plating a layer of titanium on the outer surface of the rhinestone 1, the silver reflective conductive layer 25 is formed by vacuum plating a layer of silver on the outer surface of the titanium priming layer 21, and the metal outer layer 3 is formed by electrically depositing a layer of copper on the outer surface of the silver reflective conductive layer 25. Because the titanium base layer 21 formed by vacuum titanium plating has better bonding property with the glass rhinestone 1, the titanium layer is selected as the base layer; silver has a good light reflecting effect and good electric conduction effect, so that a silver layer is selected as a light reflecting conductive layer; because the titanium priming layer 21 and the silver reflective conducting layer 25 are both formed by vacuum plating, the thickness of the titanium priming layer 21 and the silver reflective conducting layer 25 formed by vacuum plating can only reach micron level at most, and the rhinestone ornament is usually used after various accessories are welded, a metal outer layer 3 (micron level to millimeter level) is electrodeposited outside the silver reflective conducting layer 25 in order to weld various accessories, and the metal layer texture of the rhinestone ornament can be highlighted by the thicker metal outer layer 3; in addition, the metal outer layer 3 can be easily electrodeposited onto the silver light-reflecting conductive layer 25. Here, the thickness of the titanium primer layer 21 may be set to be on the order of nanometers, and it is not preferable to be too thick because if it is too thick, it may affect the silver light reflecting conductive layer 25; the thickness of the silver light reflecting conductive layer 25 may be set to a micrometer scale; the thickness of the metal outer layer 3 may be set to a micrometer to millimeter level.
According to the preferred scheme, the hollow pattern structure 4 is formed by spraying etching protection ink or electrophoretic etching protection paint on the inlaid carrier to form a protection layer and then etching the protection layer, and specifically comprises the following steps: the metal outer layer 3 is etched by hydrochloric acid and ferric trichloride or commercially available copper etching solution, then the silver reflective conductive layer 25 is etched by silver etching solution or dilute nitric acid solution, after the protective layer is removed, sodium hydroxide aqueous solution with the concentration of about 3% is added with hydrogen peroxide with the concentration of about 30%, and the hydrogen peroxide with the weight percentage of about 15% is added into the sodium hydroxide aqueous solution to form etching solution for etching the titanium priming layer 21.
Example four:
the difference between the rhinestone metal reflective hollow-out mosaic structure ornament provided by the present embodiment and the rhinestone metal reflective hollow-out mosaic structure ornament provided by the third embodiment is that the metal outer layer 3 is formed by electrodepositing a silver layer on the outer surface of the silver reflective conductive layer 25.
According to the preferred scheme, the hollow pattern structure 4 is formed by spraying etching protection ink or electrophoretic etching protection paint on the inlaid carrier to form a protection layer and then etching the protection layer, and specifically comprises the following steps: the metal outer layer 3 and the silver reflective conductive layer 25 are directly etched by silver etching solution or dilute nitric acid solution without using hydrochloric acid and ferric trichloride or using commercially available copper etching solution to etch the metal outer layer 3.
Example five:
the rhinestone metal reflective hollowed-out mosaic structure ornament provided by the embodiment is characterized in that a part for stringing a bracelet or a necklace is made by arranging the through hole on the basis of the rhinestone metal reflective hollowed-out mosaic structure ornament provided by the embodiment I, the embodiment II or the embodiment III, namely, a plurality of semi-finished products with through holes or a plurality of rhinestone ornaments with the same hollowed-out pattern structure or a plurality of rhinestone ornaments with different hollowed-out pattern structures are strung into the bracelet or the necklace and the like by arranging the through hole for stringing a rope on the rhinestone.
Example six:
the rhinestone metal reflective hollow-out mosaic structure ornament provided by the embodiment is additionally provided with the decorative plating on the basis of the rhinestone metal reflective hollow-out mosaic structure ornament provided by the embodiment one or the embodiment two or the embodiment three or the embodiment four, namely, the decorative plating is arranged on the area of the mosaic carrier, which is not provided with the hollow-out pattern structure, the decorative plating can be the decorative plating of gold, silver, imitation gold, platinum or imitation platinum, and the specific arrangement position and thickness of the decorative plating can be determined according to the aesthetic or other requirements of the rhinestone ornament to be manufactured.
Example seven:
the rhinestone metal reflective hollow-out mosaic structure ornament provided by the embodiment is the same as the other structures of the rhinestone metal reflective hollow-out mosaic structure provided by the embodiment one or the third embodiment, and is different in that only a bottom layer is adopted, wherein the bottom layer is a silicon bottom layer and is formed by vacuum plating a layer of silicon on the outer surface of a rhinestone.
In actual processing, the titanium and the silicon are not limited to be used as the priming materials, and other materials which are better in bonding property with the glass and are environment-friendly can be used as the priming materials.
Example eight:
the rhinestone metal reflective hollow-out mosaic structure ornament provided by the embodiment is characterized in that a transition plating layer is added on the basis of the rhinestone metal reflective hollow-out mosaic structure ornament provided by the embodiment one, the embodiment two or the embodiment three, namely, before the metal outer layer is electrodeposited, a layer of alkali copper or copper pyrophosphate is electroplated to be used as the transition plating layer, and for the structure provided by the embodiment one, the transition plating layer is positioned between the copper conducting layer and the metal outer layer; for the structure of the second embodiment, the transition plating layer is also located between the copper conductive layer and the metal outer layer; for the structure of example three, the transition plating layer is located between the silver reflective conductive layer and the metal outer layer.
Example nine:
the rhinestone metal light-reflecting hollow-out mosaic structure ornament comprises a rhinestone, wherein a light-reflecting conducting layer and a metal outer layer are sequentially arranged on the outer surface of the rhinestone in a tightly attached mode after the rhinestone is bombarded by a bombardment power source to form a semi-finished product, a plurality of hollow-out pattern structures are arranged on the semi-finished product aiming at a mosaic carrier formed by the light-reflecting conducting layer and the metal outer layer, and part of the surface of the rhinestone is exposed through the hollow-out pattern structures to form the rhinestone metal light-reflecting hollow-out mosaic structure ornament with metal level.
According to the preferable scheme, the light reflecting conducting layer consists of a silver reflecting layer and a copper conducting layer which are sequentially arranged from inside to outside, the silver reflecting layer is formed by vacuum plating a silver layer on the outer surface of a rhinestone after bombardment by a bombardment power source, the copper conducting layer is formed by vacuum plating a copper layer on the outer surface of the silver reflecting layer, and the metal outer layer is formed by electrodeposition of a copper layer on the outer surface of the copper conducting layer. The rhinestone is bombarded by a bombardment power source in a vacuum coating machine, so that a bottom layer is not made of titanium, and a silver layer is directly plated on the outer surface of the rhinestone in a vacuum manner to form a silver reflecting layer.
Example ten:
the rhinestone metal reflective hollowed-out mosaic structure ornament provided by the embodiment is basically the same as the structure of the eighth embodiment, and the difference is that: the light reflecting conductive layer is formed by electroplating a silver layer on the outer surface of a rhinestone after bombardment by a bombardment power source in vacuum, and the metal outer layer is formed by electrodepositing a copper layer on the outer surface of the silver light reflecting conductive layer. Bombarding the rhinestone by using a bombardment power supply in a vacuum coating machine, so that a bottom layer is not made of titanium, and directly plating a silver layer on the outer surface of the rhinestone in vacuum to form a silver reflective conductive layer; the silver light reflecting conductive layer may also be replaced by a copper layer or other single metal layer or alloy layer.
The metal hollow-out embedding structure of the rhinestone metal reflective hollow-out embedding structure ornament of each embodiment can also be applied to crystal accessories such as crystal beads with holes or without holes in various shapes, crystal pendants and the like, and can also be applied to ornament gems or ornament zircon, wherein the ornament gems need to be acid and alkali resistant.
Example eleven:
the embodiment provides a processing method of the rhinestone metal reflective hollowed-out mosaic structure ornament, which comprises the following steps:
the method comprises the following steps: and (3) carrying out vacuum plating on a layer of titanium on the outer surface of the rhinestone by utilizing a vacuum plating film technology to form a transparent titanium priming coat.
Because the titanium has better bonding property with the glass rhinestone and also has better bonding property with the silver, a transparent titanium layer is electroplated on the outer surface of the rhinestone in a vacuum manner, and the arrangement of the titanium layer does not influence the reflecting effect of the subsequent silver layer. Here, the thickness of the titanium primer layer is generally designed to be 0.01 to 0.5 micrometers, such as 0.07 micrometers in a specific design.
Step two: and (3) carrying out vacuum plating on the outer surface of the titanium priming layer by utilizing a vacuum plating film technology to form an opaque silver reflecting layer.
Since the silver layer is used as a light reflecting layer to reflect light, the silver layer is plated to be opaque at least. Here, the thickness of the silver reflective layer is generally designed to be 0.05 to 5 micrometers, for example, specifically designed to be 3 micrometers.
Step three: and (3) carrying out vacuum plating on a layer of copper on the outer surface of the silver reflecting layer by utilizing a vacuum plating film technology to form a copper conducting layer.
The silver metal has the function of combining electric conduction and later-stage electro-deposition, but a copper layer is vacuum-plated as the electric conduction layer in order to save cost. Here, the thickness of the copper conductive layer is generally designed to be 0.2 to 8 micrometers, for example, specifically designed to be 4 micrometers.
Step four: and (3) utilizing an electrodeposition technology to take the copper conducting layer as a cathode, and electrodepositing a layer of copper on the outer surface of the copper conducting layer by means of current to form a metal outer layer, thus obtaining the embedded carrier consisting of the titanium priming layer, the silver reflecting layer, the copper conducting layer and the metal outer layer, and the semi-finished product consisting of the rhinestone and the embedded carrier wrapped outside the rhinestone.
Here, the conventional electrodeposition liquid used in the electrodeposition technology has the following composition: 180-240 g of copper sulfate per liter, 25-50 ml of sulfuric acid per liter, 60-100 mg of chloride ions per liter and a brightening agent, wherein the dosage of the copper sulfate, the sulfuric acid, the chloride ions and the brightening agent can be determined according to actual conditions when the electrodeposition solution is prepared; the thickness of the metal outer layer is greater than 0.01 mm, such as 0.06 mm by design.
Step five: and spraying etching protective ink or electrophoretic etching protective paint on the semi-finished product of the mosaic carrier, and drying to form a protective layer.
Step six: a laser marker was used to pattern the designed pattern on the protective layer.
The areas to be etched are exposed to facilitate direct contact with the etching solution. Here, the laser marker may use an existing 30W fiber laser.
Step seven: and placing the patterned semi-finished product into an etching machine, etching the inlaid carrier of the patterned semi-finished product by using a copper etching solution, then etching by using a silver etching solution or a dilute nitric acid solution, removing the protective layer and then etching again by using a titanium etching solution if the titanium priming layer is not completely removed after etching, forming a hollow pattern structure which is the same as the designed pattern on the inlaid carrier after etching is finished, and exposing part of the surface of the rhinestone through the hollow pattern structure to form the rhinestone ornament with metal level texture. The temperature of the copper etching solution is raised to 40-50 ℃ before use; the specific process of etching is as follows: firstly, hydrochloric acid and ferric trichloride are adopted or commercially available copper etching liquid is adopted to etch the metal outer layer and the copper conducting layer, then silver etching liquid or dilute nitric acid solution is adopted to etch the silver reflecting layer, after the protective layer is removed, sodium hydroxide aqueous solution with the concentration of about 3% is adopted to add hydrogen peroxide with the concentration of about 30%, and hydrogen peroxide with the weight percentage of about 15% is added into the sodium hydroxide aqueous solution to form etching liquid for etching the titanium priming layer.
The vacuum titanium plating priming layer, the silver reflecting layer and the copper conducting layer all adopt a multi-arc ion magnetron sputtering coating machine, and the technological parameters are that the vacuum degree of a vacuum chamber is 8 × 10-3Pa, and regulating the vacuum degree and the product color of the vacuum chamber by using working gas such as argon with the flow rate of 20 sccm-150 sccm (such as 80sccm), wherein the temperature adopts the temperature of conventional coating; and the region of the mosaic carrier, which is not provided with the hollow pattern structure, is subjected to tin welding or laser welding to form a metal accessory.
Example twelve:
the embodiment provides a processing method of the rhinestone metal reflective hollowed-out mosaic structure ornament, which comprises the following steps:
the method comprises the following steps: and (3) carrying out vacuum plating on a layer of titanium on the outer surface of the rhinestone to an opaque state by utilizing a vacuum plating film technology to form an opaque titanium priming reflection layer. Because the associativity of the metal titanium and the glass rhinestone is better, and the titanium layer can be made into various colors to play a role in reflecting light, the vacuum plating of one titanium layer takes account of two roles of priming and reflecting light, so the titanium layer is selected as the priming reflecting layer, the thickness of the titanium layer is properly thickened when the titanium layer is used as the priming reflecting layer, and the thickness of the titanium priming reflecting layer is designed to be 0.1-5 microns, such as 2 microns.
Step two: and (3) carrying out vacuum plating on a layer of copper on the outer surface of the titanium priming reflecting layer by utilizing a vacuum plating film technology to form a copper conducting layer.
Because the titanium metal has poor bonding with the electrodeposition, a copper layer is vacuum-plated on the titanium layer. Here, the thickness of the copper conductive layer is generally designed to be 0.2 to 8 micrometers, for example, specifically designed to be 4 micrometers.
Step three: and (3) utilizing an electrodeposition technology to take the copper conducting layer as a cathode, electrodepositing a layer of copper on the outer surface of the copper conducting layer by means of current to form a metal outer layer, thus obtaining the embedded carrier consisting of the titanium bottoming reflecting layer, the copper conducting layer and the metal outer layer, and the semi-finished product consisting of the rhinestone and the embedded carrier wrapped outside the rhinestone.
Here, the conventional electrodeposition liquid used in the electrodeposition technology has the following composition: 180-240 g of copper sulfate per liter, 25-50 ml of sulfuric acid per liter, 60-100 mg of chloride ions per liter and a brightening agent, wherein the dosage of the copper sulfate, the sulfuric acid, the chloride ions and the brightening agent can be determined according to actual conditions when the electrodeposition solution is prepared; the thickness of the metal outer layer is greater than 0.01 mm, such as 0.06 mm by design.
Step four: and spraying etching protective ink or electrophoretic etching protective paint on the semi-finished product of the mosaic carrier, and drying to form a protective layer.
Step five: a laser marker was used to pattern the designed pattern on the protective layer.
The areas to be etched are exposed to facilitate direct contact with the etching solution. Here, the laser marker may use an existing 30W fiber laser.
Step six: and placing the mapped semi-finished product into an etching machine, etching the inlaid carrier of the mapped semi-finished product by using a copper etching solution, removing the protective layer, etching again by using a titanium etching solution, forming a hollow pattern structure which is the same as the designed pattern on the inlaid carrier after the etching is finished, and exposing part of the surface of the rhinestone through the hollow pattern structure to form the rhinestone ornament with metal level texture. The temperature of the copper etching solution is raised to 40-50 ℃ before use; the copper etching solution can be hydrochloric acid and ferric trichloride etching solution, and the titanium etching solution can be sodium hydroxide and hydrogen peroxide as etching solution.
The vacuum titanium plating bottoming reflecting layer and the copper conducting layer both adopt a multi-arc ion magnetron sputtering coating machine, and the technological parameters are that the vacuum degree of a vacuum chamber is 8 × 10-3Pa, and regulating the vacuum degree of the vacuum chamber and the product color by using working gas such as argon with the flow of 20 sccm-150 sccm, wherein the temperature adopts the temperature of conventional coating; the region of the mosaic carrier which is not provided with the hollow pattern structure is soldered with gold by tin soldering or laser weldingThe metal fittings are glued on the titanium priming reflection layer or the material before the priming layer before the vacuum plating of the copper conducting layer, and the glue is generally resin glue.

Claims (16)

1. The utility model provides a water bores or quartzy accessory metal reflection of light fretwork mosaic structure ornaments, includes water bores or quartzy accessory, its characterized in that: the outer surface of the crystal accessory or the crystal accessory is sequentially provided with a bottoming reflective conducting layer and a metal outer layer in a clinging manner to form a semi-finished product, and the semi-finished product is provided with a plurality of hollow pattern structures aiming at an embedding carrier formed by the bottoming reflective conducting layer and the metal outer layer, so that part of the surface of the crystal accessory or the crystal accessory is exposed through the hollow pattern structures to form the metal reflective hollow embedded structure ornament with metal level texture.
2. The rhinestone or crystal accessory metal reflective hollowed-out mosaic structure ornament according to claim 1, wherein: the bottoming reflecting conducting layer consists of a bottoming layer, a silver reflecting layer and a copper conducting layer which are sequentially arranged from inside to outside, the bottoming layer is formed by vacuum plating a layer of titanium or vacuum plating a layer of silicon or vacuum plating a layer of chromium on the outer surface of the crystal accessory, the silver reflecting layer is formed by vacuum plating a layer of silver on the outer surface of the bottoming layer, the copper conducting layer is formed by vacuum plating a layer of copper on the outer surface of the silver reflecting layer, and the metal layer is formed by electrodeposition of a layer of copper on the outer surface of the copper conducting layer.
3. The rhinestone or crystal accessory metal reflective hollowed-out mosaic structure ornament according to claim 1, wherein: the bottoming reflecting conducting layer is composed of a titanium bottoming reflecting layer and a copper conducting layer which are sequentially arranged from inside to outside, the titanium bottoming reflecting layer is formed by vacuum plating a layer of titanium on the outer surface of the crystal accessory or the rhinestone, the copper conducting layer is formed by vacuum plating a layer of copper on the outer surface of the titanium bottoming reflecting layer, and the metal outer layer is formed by electrodeposition of a layer of copper on the outer surface of the copper conducting layer.
4. The rhinestone or crystal accessory metal reflective hollowed-out mosaic structure ornament according to claim 1, wherein: the bottoming reflection of light conducting layer constitute by bottoming layer and the silver reflection of light conducting layer that from interior to exterior set gradually, the bottoming layer be in the water drill or the surface of crystal accessory on vacuum plating one deck titanium or vacuum plating one deck silicon or vacuum plating one deck chromium form, the silver reflection of light conducting layer be in the surface of bottoming layer on vacuum plating one deck silver form, the metal outer be in the surface of silver reflection of light conducting layer on the electrodeposition one deck copper form.
5. The rhinestone or crystal accessory metal reflective hollowed-out mosaic structure ornament according to claim 1, wherein: the bottoming reflection of light conducting layer constitute by bottoming layer and the silver reflection of light conducting layer that from interior to exterior set gradually, the bottoming layer be in the rhinestone or the surface of crystal accessory on vacuum plating one deck titanium or vacuum plating one deck silicon or vacuum plating one deck chromium form, the silver reflection of light conducting layer be in the surface of bottoming layer on vacuum plating one deck silver form, the metal outer be in the surface of silver reflection of light conducting layer on the electrodeposition one deck silver form.
6. The rhinestone or crystal accessory metal reflective hollowed-out mosaic structure ornament according to any one of claims 2 to 5, wherein: before the metal outer layer is electrodeposited, a layer of alkali copper or copper pyrophosphate is electroplated to be used as a transition plating layer.
7. The rhinestone or crystal accessory metal reflective hollowed-out mosaic structure ornament according to claim 6, wherein: the hollow pattern structure is formed by etching the inlaid carrier after spraying etching protective ink or electrophoretic etching protective paint.
8. The rhinestone or crystal accessory metal reflective hollowed-out mosaic structure ornament according to claim 7, wherein: the hollow pattern structure is in the same shape as the surface of the rhinestone or the crystal accessory, the periphery of the hollow pattern structure is designed into various lace shapes, the metal accessory is welded on the region of the embedding carrier, which is not provided with the hollow pattern structure, in a tin welding mode or a laser welding mode, and the decorative plating is arranged on the region of the embedding carrier, which is not provided with the hollow pattern structure.
9. The rhinestone or crystal accessory metal reflective hollowed-out mosaic structure ornament according to claim 1, wherein: the crystal accessory or the crystal accessory is replaced by an ornament jewel or an ornament zircon.
10. The utility model provides a water bores or quartzy accessory metal reflection of light fretwork mosaic structure ornaments, includes water bores or quartzy accessory, its characterized in that: after the rhinestone or the crystal accessory is bombarded by the bombardment power supply, the outer surface of the rhinestone or the crystal accessory is sequentially and closely provided with a reflective conducting layer and a metal outer layer to form a semi-finished product, and the semi-finished product is provided with a plurality of hollow pattern structures aiming at an embedding carrier formed by the reflective conducting layer and the metal outer layer, so that part of the surface of the rhinestone or the crystal accessory is exposed through the hollow pattern structures to form the metal reflective hollow-out embedding structure ornament with metal level texture.
11. The rhinestone or crystal accessory metal reflective hollowed-out mosaic structure ornament according to claim 10, wherein: the light reflecting conducting layer is formed by a silver reflecting layer and a copper conducting layer which are sequentially arranged from inside to outside, the silver reflecting layer is formed by vacuum plating a layer of silver on the outer surface of the crystal accessory after the crystal accessory is bombarded by a bombardment power source, the copper conducting layer is formed by vacuum plating a layer of copper on the outer surface of the silver reflecting layer, and the metal layer is formed by electrodeposition of a layer of copper on the outer surface of the copper conducting layer.
12. The rhinestone or crystal accessory metal reflective hollowed-out mosaic structure ornament according to claim 10, wherein: the light-reflecting conducting layer is formed by electroplating a layer of silver on the outer surface of the rhinestone or the crystal accessory after bombardment by a bombardment power source in vacuum, and the metal outer layer is formed by electrodepositing a layer of copper on the outer surface of the silver light-reflecting conducting layer.
13. The processing method of the rhinestone or crystal accessory metal reflective hollowed-out mosaic structure ornament as claimed in claim 2, characterized in that: the method comprises the following steps:
the method comprises the following steps: a layer of titanium is plated on the outer surface of the rhinestone or the crystal accessory in a vacuum mode by utilizing a vacuum plating film technology to form a transparent titanium priming coat;
step two: a layer of silver is plated on the outer surface of the titanium priming layer in a vacuum mode to be in an opaque state through a vacuum plating film technology, and an opaque silver reflecting layer is formed;
step three: a layer of copper is electroplated on the outer surface of the silver reflecting layer in a vacuum manner by utilizing a vacuum electroplating film technology to form a copper conducting layer;
step four: using an electrodeposition technology, taking the copper conducting layer as a cathode, and electrodepositing a layer of copper on the outer surface of the copper conducting layer by means of current to form a metal outer layer, thus obtaining an embedded carrier consisting of a titanium priming layer, a silver reflecting layer, the copper conducting layer and the metal outer layer, and a semi-finished product consisting of a rhinestone or a crystal accessory and the embedded carrier wrapped outside the rhinestone or the crystal accessory;
step five: spraying etching protection ink or electrophoretic etching protection paint on the semi-finished mosaic carrier, and drying to form a protection layer;
step six: drawing on the protective layer according to the designed pattern by using a laser marking machine;
step seven: placing the semi-finished product which is mapped into an etching machine, etching the embedding carrier of the semi-finished product which is mapped by using a copper etching solution, then etching by using a silver etching solution or a dilute nitric acid solution, removing a protective layer and then etching again by using a titanium etching solution if the titanium priming layer is not completely removed after etching, forming a hollow pattern structure which is the same as the designed pattern on the embedding carrier after etching is finished, and exposing partial surface of a rhinestone or a crystal accessory or a jewel or zircon through the hollow pattern structure to form the metal reflective hollow embedding structure ornament with metal level texture.
14. The method for manufacturing the metal reflective hollowed-out mosaic structure ornament according to claim 13, wherein the thickness of the titanium bottom layer is 0.01-0.5 microns, the thickness of the silver reflective layer is 0.05-5 microns, the thickness of the copper conductive layer is 0.2-8 microns, the thickness of the metal outer layer is more than 0.01 mm, the titanium bottom layer, the silver reflective layer and the copper conductive layer are vacuum-plated by a multi-arc ion magnetron sputtering coater, and the process parameters are that the vacuum degree of a vacuum chamber is 8 × 10-3Pa, and regulating the vacuum degree and the color of the vacuum chamber by using working gas with the flow rate of 20 sccm-150 sccm; and the region of the mosaic carrier, which is not provided with the hollow pattern structure, is subjected to tin welding or laser welding to form a metal fitting.
15. A method for processing a rhinestone or crystal accessory metal reflective hollowed-out mosaic structure ornament as claimed in claim 3, wherein: the method comprises the following steps:
the method comprises the following steps: a layer of titanium is electroplated on the outer surface of the rhinestone or the crystal accessory in a vacuum mode to be in an opaque state by utilizing a vacuum electroplating film technology, and an opaque titanium priming reflecting layer is formed;
step two: vacuum plating a layer of copper on the outer surface of the titanium priming reflecting layer by using a vacuum plating film technology to form a copper conducting layer;
step three: using an electrodeposition technology, taking the copper conducting layer as a cathode, and electrodepositing a layer of copper on the outer surface of the copper conducting layer by means of current to form a metal outer layer, thus obtaining an embedded carrier consisting of a titanium priming reflecting layer, the copper conducting layer and the metal outer layer, and a semi-finished product consisting of a rhinestone or a crystal accessory and an embedded carrier wrapped outside the rhinestone or the crystal accessory;
step four: spraying etching protection ink or electrophoretic etching protection paint on the semi-finished mosaic carrier, and drying to form a protection layer;
step five: drawing on the protective layer according to the designed pattern by using a laser marking machine;
step six: and placing the semi-finished product which is mapped into an etching machine, firstly etching the embedding carrier of the semi-finished product which is mapped by using copper etching liquid, then removing the protective layer, then etching again by using titanium etching liquid, forming a hollow pattern structure which is the same as the designed pattern on the embedding carrier after the etching is finished, and exposing partial surface of the rhinestone or the crystal accessory through the hollow pattern structure to form the metal light-reflecting hollow embedding structure ornament with metal level texture.
16. The method for manufacturing the metal reflective hollow-out mosaic structure ornament according to claim 15, wherein the thickness of the titanium bottom reflecting layer is 0.1-5 microns, the thickness of the copper conducting layer is 0.2-8 microns, the thickness of the metal outer layer is more than 0.01 mm, the titanium bottom reflecting layer and the copper conducting layer are vacuum-plated by a multi-arc ion magnetron sputtering coating machine, and the process parameters are that the vacuum degree of a vacuum chamber is 8 × 10-3Pa, and regulating the vacuum degree and the product color of the vacuum chamber by using working gas with the flow rate of 20 sccm-150 sccm; the area of the mosaic carrier, which is not provided with the hollow pattern structure, is subjected to tin welding or laser welding with metal fittings, or before the vacuum copper electroplating conducting layer, a titanium priming reflecting layer or a material before the priming layer is subjected to glue adhesion with the metal fittings.
CN201911347771.7A 2019-01-24 2019-12-24 Metal reflective hollow-out embedded structure ornament of rhinestone or crystal accessory and processing method thereof Pending CN111466686A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114304829A (en) * 2021-12-29 2022-04-12 广东蓝碟羽水晶饰品有限公司 Rhinestone glue attaching method and rhinestone prepared by method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114304829A (en) * 2021-12-29 2022-04-12 广东蓝碟羽水晶饰品有限公司 Rhinestone glue attaching method and rhinestone prepared by method
CN114304829B (en) * 2021-12-29 2024-02-27 广东益弘宝水晶饰品有限公司 Rhinestone adhesive attaching method and rhinestone manufactured by same

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