CN111463112A - Coating film forming method and coating film forming apparatus - Google Patents

Coating film forming method and coating film forming apparatus Download PDF

Info

Publication number
CN111463112A
CN111463112A CN202010017203.7A CN202010017203A CN111463112A CN 111463112 A CN111463112 A CN 111463112A CN 202010017203 A CN202010017203 A CN 202010017203A CN 111463112 A CN111463112 A CN 111463112A
Authority
CN
China
Prior art keywords
substrate
coating
film forming
coating film
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202010017203.7A
Other languages
Chinese (zh)
Other versions
CN111463112B (en
Inventor
稻叶翔吾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN111463112A publication Critical patent/CN111463112A/en
Application granted granted Critical
Publication of CN111463112B publication Critical patent/CN111463112B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention provides a coating film forming method for forming a coating film on a surface of a substrate, including: a coating diffusion step of supplying a coating liquid for forming the coating film to the surface of the substrate to diffuse the coating liquid by rotating the substrate at a 1 st rotation speed in a coating cup having an opening on the upper surface; and a drying step of exhausting air from a gap between an annular member and the surface of the substrate while rotating the substrate at a 2 nd rotation speed lower than the 1 st rotation speed after the coating and diffusing step, wherein the annular member is disposed above the substrate so that the center thereof is coaxial with the center of the surface of the substrate and has a size such that the outer peripheral end thereof is positioned at the same position as or outside the outer peripheral end of the substrate, and in the drying step, the exhaust air is exhausted at a higher pressure than the exhaust air in the coating cup in the coating and diffusing step. Thus, a coating film having a good uniformity of film thickness can be formed quickly on the surface of the substrate.

Description

Coating film forming method and coating film forming apparatus
Technical Field
The present invention relates to a coating film forming method and a coating film forming apparatus.
Background
In a manufacturing process of a semiconductor device, a semiconductor wafer (hereinafter, referred to as a wafer) which is a circular substrate is coated with a plurality of coating liquids such as a resist to perform a film formation process. Patent document 1 describes that, when drying a resist applied to a wafer, a ring-shaped member along the periphery of the wafer is disposed on the wafer, and a gas flow on the wafer is rectified.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2017-92392.
Disclosure of Invention
Technical problem to be solved by the invention
The purpose of the present invention is to quickly form a coating film having a good uniformity of film thickness on the surface of a substrate.
Means for solving the problems
One embodiment of the present invention is a coating film forming method for forming a coating film on a surface of a substrate, including: a coating diffusion step of supplying a coating liquid for forming the coating film to the surface of the substrate and diffusing the coating liquid by rotating the substrate at a 1 st rotation speed in a coating cup having an opening on the upper surface; and a drying step of exhausting air from a gap between a ring-shaped member and a surface of the substrate while rotating the substrate at a 2 nd rotation speed lower than the 1 st rotation speed after the coating and diffusing step, wherein the ring-shaped member is disposed above the substrate so that a center thereof is positioned coaxially with a center of the surface of the substrate, and the ring-shaped member has a size such that an outer peripheral end thereof is positioned at a position same as or outside the outer peripheral end of the substrate, and in the drying step, the exhaust air is exhausted at a higher pressure than the exhaust air in the coating cup in the coating and diffusing step.
Effects of the invention
According to the technique of the present invention, a coating film having a uniform film thickness can be formed quickly on the surface of a substrate.
Drawings
Fig. 1 is an explanatory view schematically showing a vertical cut-off side of a side surface of a resist coating apparatus as an embodiment.
Fig. 2 is a plan view of the resist coating apparatus of fig. 1.
Fig. 3 is an explanatory diagram showing a relationship between the ring plate and the cup in the resist coating apparatus of fig. 1.
Fig. 4 is an explanatory diagram showing an example of a wafer processed by the resist coating apparatus of fig. 1.
Fig. 5 is a graph showing a relationship between the magnitude of the amount of exhaust gas and the film thickness distribution at the time of low rotation.
Fig. 6 is an explanatory view showing how the resist solution spreads on the wafer during low rotation and normal exhaust.
Fig. 7 is an explanatory view showing how the resist solution spreads on the wafer during low spin and high exhaust.
Description of the reference numerals
1 resist film Forming apparatus
11 rotating suction cup
12 rotating mechanism
14 cup-shaped body
17 air exhausting device
31 resist liquid supply nozzle
51 ring plate
100 control part
d. h gap
R resist liquid
W wafer.
Detailed Description
The technique described in patent document 1 includes the steps of: the coating liquid is supplied to the center of the substrate, the substrate is rotated at the 1 st rotation speed, the coating liquid is diffused by the centrifugal force, and then the substrate is decelerated from the 1 st rotation speed to the 2 nd rotation speed, and the surface of the liquid film of the coating liquid is made uniform at the 2 nd rotation speed. Thereafter, the substrate is rotated at a 3 rd rotation speed faster than the 2 nd rotation speed to be dried. Then, in the step of drying the surface of the substrate by rotating at the above-described 3 rd rotation speed, a ring member formed in a ring shape along the circumferential direction of the substrate is set at a position covering the upper side of the peripheral portion of the substrate, and the gas flow over the peripheral portion of the substrate is rectified by the ring member.
However, in a process of applying a coating liquid having a high viscosity (for example, about 300 cP) to a pattern having a large aspect ratio such as a 3D-NAND device, the thickness of the recess tends to increase in the radial direction, and further improvement is desired. On the other hand, in the drying step, if the rotation speed is decreased in order to improve the uniformity of the film thickness, there is a problem that the drying time becomes long.
The invention aims to improve the uniformity of film thickness and shorten drying time compared with the prior art when coating a high-viscosity coating liquid on a pattern with a high aspect ratio.
Hereinafter, the structure of the substrate processing apparatus according to the present embodiment will be described with reference to the drawings. In the present specification, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description thereof is omitted.
Fig. 1 schematically shows a cross section of a side surface of a resist film forming apparatus 1 as a coating film forming apparatus according to an embodiment. The resist film forming apparatus 1 includes a spin chuck 11 which is a substrate holding portion for horizontally holding a circular substrate having a diameter of 300mm, for example, a wafer W by vacuum-sucking the central portion of the back surface of the wafer W. The spin chuck 11 is connected to a rotation mechanism 12, and is rotated about a vertical axis by the rotation mechanism 12. The cup 14 is provided so as to surround the wafer W held by the spin chuck 11, and is a coating cup for preventing various processing liquids such as a coating liquid and a solvent from being splashed from the wafer W. The cup 14 has a liquid discharge port 15 at the bottom thereof. Further, an exhaust pipe 16 is provided at the bottom of the cup 14, and during the processing of the wafer W, the inside of the cup 14 is exhausted by an exhaust device 17 connected to the exhaust pipe 16. The surface of the wafer W is exhausted from the periphery of the wafer W by the exhaust gas in the cup 14.
The lift pin 21 is disposed around the rotary chuck 11. The lift pins 21 are vertically moved up and down by a lift mechanism 22, and can support and move up and down the wafer W. This allows the wafer W to be transferred between the spin chuck 11 and a substrate transfer mechanism, not shown.
A Fan Filter Unit (FFU)19 is provided above the cup-shaped body 14 having an opening on the upper surface thereof, and supplies cleaning air to the wafer W placed on the spin chuck 11. The air supplied to the wafer W is exhausted from the cup 14 through the exhaust pipe 16.
An annular guide member 23 having inclined surfaces 23a and 23b on the inner and outer sides is disposed around the rotary chuck 11. A back surface cleaning nozzle 24 is provided on the top of the guide member 23. The back surface cleaning nozzle 24 discharges the solvent of the resist solution to the peripheral edge portion of the back surface of the wafer W to clean the back surface.
An annular inclined surface portion 25 inclined outward and downward is formed on the upper surface side of the cup-shaped body 14, and an annular convex portion 26 formed vertically upward is formed on the inner peripheral edge portion of the inclined surface portion 25.
The resist film forming apparatus 1 includes, for example, a resist liquid supply nozzle 31 for discharging the resist vertically downward. The resist supply nozzle 31 is connected to a resist supply mechanism 32 for storing a resist solution. The resist supply mechanism 32 has a pump, a valve, and the like, and supplies the resist liquid to the resist liquid supply nozzle 31. In this embodiment, the viscosity of the resist solution stored in the resist supply mechanism 32 is, for example, 50 to 900 cP.
As shown in fig. 2, the resist liquid supply nozzle 31 is supported by the tip of an arm 33, and the base end of the arm 33 is connected to a moving mechanism 34. The moving mechanism 34 is movable along the guide rail 35 in the direction of the reciprocating arrow in the figure by a driving mechanism (not shown) such as a motor. Further, the resist liquid supply nozzle 31 supported by the arm 33 is movable in the vertical direction. The resist liquid supply nozzle 31 can stand by in a standby portion 36 disposed outside the cup-shaped body 14.
The resist film forming apparatus 1 includes, for example, a solvent supply nozzle 41 for discharging a solvent vertically downward. The solvent supply nozzle 41 is connected to a solvent supply mechanism 42 for storing a solvent, and the solvent is supplied from the solvent supply mechanism 42 to the solvent supply nozzle 41. The solvent supply nozzle 41 is used to remove unnecessary resist film on the peripheral edge of the wafer W.
The solvent supply nozzle 41 is supported by the tip of an arm 43, and the base end of the arm 43 is connected to a moving mechanism 44. The moving mechanism 44 is movable along the guide rail 45 in the direction of the reciprocating arrow in the figure by a driving mechanism (not shown) such as a motor. In addition, the solvent supply nozzle 41 supported by the arm 43 is movable in the vertical direction. The solvent supply nozzle 41 can stand by in the standby portion 36 disposed outside the cup-shaped body 14.
The resist film forming apparatus 1 is provided with a ring plate 51 as a circular ring-shaped member so as to be positioned above the wafer W placed on the spin chuck 11. A circular opening 52 is formed in the center of the ring plate 51. The inner diameter of the opening 52 of the ring plate 51, i.e., the diameter D of the opening 52, is set to 40mm to 200mm, for example. Further, a peripheral edge 51a of the inner periphery of the ring plate 51 forming the opening 52 is formed to protrude upward.
The lower surface of the ring plate 51 covers the wafer W placed on the spin chuck 11 so as to face the wafer W. The center of the ring plate 51, that is, the center of the opening 52 coincides with the center of the wafer W placed on the spin chuck 11 in a plan view. The size of the ring plate 51, i.e., the diameter of the ring plate 51, is set to be about 300mm to 310mm, for example, having a length equal to or longer than that of the wafer W.
The ring plate 51 is connected to an elevating mechanism 54 via a support member 53, and ascends and descends between an ascending position (1 st position) shown by a chain line in fig. 1 and a descending position (2 nd position) shown by a solid line in fig. 1 below the ascending position.
When the ring plate 51 is lowered to the 2 nd position, as shown in fig. 3, a gap d is formed between the convex portion 26 inside the cup-shaped body 14 and the outer peripheral end portion of the ring plate 51. The clearance d is set to be, for example, 1 to 10 mm. When the ring plate 51 is lowered to the 2 nd position, a gap h is formed between the wafer W placed on the spin chuck 11 and the lower surface of the ring plate 51. The gap h is set to be, for example, 1 to 10 mm. The size of the gap h can be arbitrarily set by the elevating mechanism 54.
The resist film forming apparatus 1 is provided with a control section 100 as a computer. The control unit 100 is loaded with a program stored in a storage medium such as an optical disk, a hard disk, an MO (magneto optical disk), a memory card, or a DVD. The installed program incorporates commands (steps) for controlling the operation of each part of the resist film forming apparatus 1 by sending control signals thereto. For example, the rotation speed (rotation speed) of the wafer W can be changed by the rotation mechanism 12, the movement of the resist liquid supply nozzle 31 and the solvent supply nozzle 41, and the supply and stop of the resist liquid from the resist supply mechanism 32 to the resist liquid supply nozzle 31 can be controlled. The control unit 100 can also control the elevation of the ring plate 51 and the amount of exhaust gas from the exhaust device 17.
Next, a wafer W processed by the resist film forming apparatus 1 will be described with reference to fig. 4. The surface of the wafer W is formed with a concave-convex pattern. An area surrounded by a broken line on the surface of the wafer W shown in fig. 4 (a) is enlarged in front of the dotted line arrow, and an example of the concave-convex pattern is shown in the enlarged view. In this example, a plurality of grooves (concave portions) 61 are formed in the vertical and horizontal directions so as to divide the front surface of the wafer W into a matrix, and the convex portions 62 are formed by the grooves 61. Resist films 61a and 62a are formed on the upper surfaces of the grooves 61 and the projections 62, respectively.
Fig. 4 (b) shows a longitudinal section of the side surface of the wafer W. The depth A of the groove 61 (height of the projection 62) is, for example, 1 μm to 20 μm, more specifically, 8 μm. The width B of the groove 61 is, for example, 10 to 5000. mu.m, more specifically, 200. mu.m. The width C of one side of the convex portion 62 is, for example, 10 μm to 5000 μm, more specifically 2800 μm. Further, the concave-convex pattern is not limited to the shape shown in fig. 4. The technique of the present invention can also be used when a substrate on which an uneven pattern is not formed is processed. The concave-convex pattern to which the technique of the present invention is applied can exhibit the most advantageous effect when the aspect ratio of the concave portion is, for example, 0.01 to 0.1.
Next, a resist film forming method, which is an example of a coating film forming process performed by using the resist film forming apparatus 1 having the above-described structure, will be described. First, the wafer W is held on the spin chuck 11, rotated at 1000 to 3000rpm, for example, 2000rpm, which is the 1 st rotation speed, and the resist liquid is supplied from the resist liquid supply nozzle 31 to the center portion of the wafer W. In this case, the ring plate 51 is located at the raised position (1 st position). While the resist solution is spread over the wafer W at the 1 st rotation speed, the exhaust pressure in the cup 14 by the exhaust device 17 is set to, for example, 70 Pa.
Furthermore, a pre-wetting mode may be employed, namely: when the resist liquid is to be supplied, the solvent is supplied to the surface of the wafer W and diffused by using the solvent supply nozzle 41 before the supply of the resist liquid.
Next, the drying step of the resist solution on the wafer W is performed at a low rotation speed of 50rpm to 200rpm, for example, 100rpm, which is the 2 nd rotation speed lower than the 1 st rotation speed. In this drying step, the ring plate 51 is in the lowered position (2 nd position). Then, the exhaust pressure in the cup-shaped body 14 by the exhaust device 17 is set to, for example, 70Pa, and exhaust is performed with high exhaust gas.
By performing the drying process in this state, a film of the resist solution is formed on the entire surface of the wafer W. By drying the wafer W after the resist liquid is applied by such low spin and high exhaust, the film thickness can be made uniform and the drying time can be shortened as compared with conventional low spin drying.
Specifically, fig. 5 is a graph showing a comparison of film thicknesses between a case where the low rotation-high exhaustion drying step is first performed using the resist film forming apparatus 1 of the embodiment and a case where the low rotation-normal exhaustion is performed. The film thickness distribution shown in the graph is for examining the effect of high outgassing, and therefore the ring plate 51 is not used.
Thus, during the low rotation-normal exhaust gas drying step at low rotation of 100rpm, the exhaust pressure by the exhaust device 17 is kept at 21 Pa. On the other hand, low spin-high exhaust gas when the drying step is performed at low spin of 100rpm, the exhaust pressure achieved by the exhaust device 17 is increased from 21Pa to 70 Pa. As a result, as shown in fig. 5, the increase in the film thickness at the peripheral edge portion of the wafer W can be suppressed by the low spin-normal evacuation, and the film thickness can be made uniform as a whole.
This is presumed to be caused by the following mechanism. That is, in the low spin-normal exhaust, as shown in (a) of fig. 6, the resist liquid R diffuses even in the drying step. However, when the viscosity of the resist solution R is high (for example, 50cP to 900cP), the resist solution R is less diffused as shown in fig. 6 (b) as the rotation speed is low, and thus the resist solution R is deposited on the outer peripheral portion of the wafer W. Then, the resist solution R continues to be deposited on the outer peripheral portion until the outer peripheral portion is dried, and as a result, the film thickness of the outer peripheral portion of the wafer W increases at the end of drying, and the resist film on the outer peripheral portion jumps as shown in fig. 6 (c).
In contrast, in the low spin-high exhaust, as shown in (a) of fig. 7, the resist liquid R spreads in the same manner as in the low spin-normal exhaust. However, as shown in fig. 7 (b), since the exhaust gas is high, the drying time of the resist solution on the wafer W is shortened, and the deposition amount of the resist solution R in the outer peripheral portion can be suppressed. As a result, as shown in fig. 7 (c), the increase in the film thickness of the outer peripheral portion of the wafer W and the jump-up can be suppressed.
In the resist film forming method of the embodiment, the ring plate 51 is further lowered to be positioned at the 2 nd position in the drying step, so that the lower surface of the ring plate 51 covers the surface of the wafer W. Therefore, the flow rate of the air on the surface of the resist solution R on the wafer W becomes further high. As a result, the film thickness uniformity can be improved and the drying time can be shortened.
The air supplied from the Fan Filter Unit (FFU)19 enters from the opening 52 of the ring plate 51, i.e., above the central portion of the wafer W, and the flow velocity of the air is increased as described above and flows to the outer peripheral portion. In this case, when the influence of the film thickness variation due to the flow rate difference between the center side and the outer peripheral side of the wafer W is concerned, the center of the opening 52 can be shifted from the center of the wafer W placed on the spin chuck 11 in a plan view.
Since the radial position of the wafer W corresponding to the lower side of the opening 52 changes as the wafer W rotates, the influence on the film thickness due to the difference in flow velocity of air is considered, and the radial position is made uniform and reduced by the process of rotating the wafer W. In this case, instead of disposing the opening 52 with the center shifted from the center of the wafer W, a notch may be provided in a part of the opening portion of the ring plate 51, or a plate having a shape with a notch from the outer periphery may be used instead of the ring plate 51.
According to the investigation of the inventors, the uniformity of the film thickness can be improved by about 40% in the case of the low spin-high exhaust, compared to the case where the ring plate 51 is lowered and disposed at the 2 nd position in the drying step by the low spin-normal exhaust. In addition, as for the drying time, the drying time can be shortened by 20% by the low rotation-high exhaust gas, compared with the case where the ring plate 51 is lowered and disposed at the 2 nd position in the drying step by the low rotation-normal exhaust gas.
Here, the high exhaust means that exhaust is performed at an exhaust pressure higher than the exhaust pressure of the normal exhaust realized by the exhaust device 17 in the coating diffusion step, and for example, exhaust is performed at a pressure 2 times or more the exhaust pressure of the normal exhaust.
The inventors further investigated and found that the gap d between the convex portion 26 inside the cup-shaped body 14 and the outer peripheral end portion of the ring plate 51 and the gap h between the wafer W placed on the spin chuck 11 and the lower surface of the ring plate 51 in the drying step have an influence on the uniformity of the film thickness and the drying time.
That is, when the gap d is narrowed, the drying time can be shortened although the uniformity of the film thickness is deteriorated. However, it was found that even if the gap d was made narrow, for example, set to 5mm, the uniformity of the film thickness did not improve when the exhaust was kept low. On the other hand, regarding the gap h, it is found that the drying time becomes longer as the value thereof becomes larger.
From such a situation, it is found that, in order to improve the uniformity of the film thickness and shorten the drying time, the best results can be obtained by balancing the flow rates of the air flowing through the gap d and the air flowing through the gap h during the air discharge. Therefore, the sizes of the gap d and the gap h can be set to be in the range of 1 to 10mm respectively, and the sizes of the gap d and the gap h are almost the same.
Of course, since the optimum sizes of the gap d and the gap h vary depending on the type and viscosity of the coating liquid, optimum film thickness uniformity and drying time can be achieved by appropriately adjusting the sizes of the gap d and the gap h. Further, since the allowable range of the uniformity of the film thickness is different depending on the process recipe, when the drying time is shortened within the allowable range, the uniformity of the film thickness and the shortening of the drying time can be controlled by appropriately adjusting the sizes of the gap d and the gap h.
Further, as described above, the exhaust pressure at the time of supplying and diffusing the resist liquid is set to the normal exhaust and the exhaust pressure at a higher exhaust pressure than the normal exhaust is set to the high exhaust by adjusting the exhaust pressure by the exhaust device 17 for the normal exhaust and the high exhaust, but other parameters may be used.
That is, in the drying step, the air may be discharged at a flow rate 2 times or more, and more preferably 3 to 5 times, the flow rate of the air discharged from the gap h as compared with the flow rate of the air supplied from above to the wafer W in the cup-shaped body 14 through the Fan Filter Unit (FFU) 19. Here, the flow velocity of the air flowing through the so-called gap h is the flow velocity of the air flowing in the radial direction of the wafer W.
The embodiments disclosed in the specification are illustrative in all respects and are not intended to be limiting. The above-described embodiments may be omitted, replaced, or changed in various ways without departing from the scope of the appended claims and the gist thereof.
The following configurations also fall within the technical scope of the present invention.
(1) A coating film forming method of forming a coating film on a surface of a substrate, comprising: a coating diffusion step of supplying a coating liquid for forming the coating film to the surface of the substrate and diffusing the coating liquid by rotating the substrate at a 1 st rotation speed in a coating cup having an opening on the upper surface; and a drying step of, after the coating diffusion step, rotating the substrate at a 2 nd rotation speed lower than the 1 st rotation speed while exhausting air from a gap between an annular member and a surface of the substrate, wherein the annular member is disposed above the substrate so that a center thereof is positioned coaxially with a center of the surface of the substrate, the annular member has a size such that an outer peripheral end thereof is positioned at a position same as or outside an outer peripheral end of the substrate, and a flow rate of air exhausted from the gap is 2 times or more a flow rate of air supplied to the substrate from above the substrate in the coating cup.
Here, the coating liquid is supplied and spread in the coating spreading step, and the coating liquid does not necessarily need to be spread over the entire surface of the substrate.
(2) A coating film forming method of forming a coating film on a surface of a substrate, comprising: a coating diffusion step of supplying a coating liquid for forming the coating film to the surface of the substrate and diffusing the coating liquid by rotating the substrate at a 1 st rotation speed in a coating cup having an opening on the upper surface; and a drying step of exhausting air from a gap between a ring-shaped member and a surface of the substrate while rotating the substrate at a 2 nd rotation speed lower than the 1 st rotation speed after the coating and diffusing step, wherein the ring-shaped member is disposed above the substrate so that a center thereof is positioned coaxially with a center of the surface of the substrate, and the ring-shaped member has a size such that an outer peripheral end thereof is positioned at a position same as or outside the outer peripheral end of the substrate, and in the drying step, the exhaust air is exhausted at a higher pressure than the exhaust air in the coating cup in the coating and diffusing step.
Here, the coating liquid is supplied and spread in the coating spreading step, and the coating liquid does not necessarily need to be spread over the entire surface of the substrate.
(3) In the coating film forming method of the above (1) or (2), a gap in a longitudinal direction between a portion of the coating cup closest to the annular member and an outer peripheral end portion of the annular member is 1 to 10mm, and a gap between a lower surface of the annular member and the surface of the substrate is 1 to 10 mm.
(4) In the coating film forming method of (3), a gap in a longitudinal direction between a portion of the coating cup closest to the annular member and an outer peripheral end portion of the annular member is the same as a gap between a lower surface of the annular member and the surface of the substrate.
(5) In any of the above-described coating film forming methods (1) to (4), the 1 st rotation speed is 1000rpm to 3000rpm, and the 2 nd rotation speed is 50rpm to 500 rpm.
(6) In any one of the above-described coating film forming methods (1) to (5), the substrate has a concave-convex pattern formed on a surface thereof, and an aspect ratio of a concave portion in the concave-convex pattern is 0.01 to 0.1.
(7) In any of the above-described coating film forming methods (1) to (6), the viscosity of the coating liquid is 50 to 900 cP.
(8) A coating film forming apparatus for forming a coating film on a surface of a substrate, comprising: a substrate holding section for holding a substrate; a rotation mechanism that rotates the substrate held by the substrate holding portion; a coating cup surrounding the substrate held on the substrate holding section; a nozzle for supplying a coating liquid for forming a coating film to a central portion of a surface of the substrate; a ring member disposed above the substrate holder so as to be movable up and down, the ring member having a diameter equal to or longer than a diameter of the substrate; an exhaust device for exhausting an atmosphere in the coating cup; and a controller configured to control the rotation mechanism and the exhaust device so that the rotation speed of the rotation mechanism is reduced and the exhaust flow rate of the exhaust device is increased after the step of supplying the coating liquid to the substrate held by the substrate holding portion by the nozzle and diffusing the coating liquid by the rotation mechanism.
Here, in the step of diffusing the coating liquid, it is not always necessary to diffuse the coating liquid over the entire surface of the substrate.

Claims (9)

1. A coating film forming method for forming a coating film on a surface of a substrate, comprising:
a coating diffusion step of supplying a coating liquid for forming the coating film to the surface of the substrate and diffusing the coating liquid by rotating the substrate at a 1 st rotation speed in a coating cup having an opening on the upper surface; and
a drying step of exhausting gas from a gap between a ring-shaped member and a surface of the substrate while rotating the substrate at a 2 nd rotation speed lower than the 1 st rotation speed after the coating diffusion step, wherein the ring-shaped member is disposed above the substrate so that a center thereof is coaxial with a center of the surface of the substrate,
the annular member has a size such that an outer peripheral end thereof is located at the same position as the outer peripheral end of the substrate or at a position outside the outer peripheral end of the substrate,
in the drying step, a flow rate of air discharged from the gap is larger than a flow rate of air supplied to the substrate from above the substrate in the coating cup.
2. The coated film forming method according to claim 1, wherein:
in the drying step, a flow rate of air discharged from the gap is 2 times or more a flow rate of air supplied to the substrate from above the substrate in the coating cup.
3. The coated film forming method according to claim 1, wherein:
in the drying step, the air is exhausted at a higher pressure than the air exhausted inside the coating cup in the coating diffusion step.
4. The coated film forming method according to claim 1, wherein:
a gap in a longitudinal direction between a portion of the coating cup closest to the annular member and an outer peripheral end of the annular member is 1 to 10mm, and a gap between a lower surface of the annular member and a surface of the substrate is 1 to 10 mm.
5. The coated film forming method according to claim 3, wherein:
the coating cup has the same longitudinal gap between the portion closest to the ring member and the outer peripheral end of the ring member as the gap between the lower surface of the ring member and the substrate surface.
6. The coating film forming method according to any one of claims 1 to 5, wherein:
the 1 st rotating speed is 1000rpm to 3000rpm,
the 2 nd rotation speed is 50rpm to 500 rpm.
7. The coating film forming method according to any one of claims 1 to 5, wherein:
the substrate is provided with a concave-convex pattern on the surface, and the depth-to-width ratio of a concave part in the concave-convex pattern is 0.01-0.1.
8. The coating film forming method according to any one of claims 1 to 5, wherein:
the viscosity of the coating liquid is 50cP to 900 cP.
9. A coating film forming apparatus for forming a coating film on a surface of a substrate, comprising:
a substrate holding section for holding a substrate;
a rotation mechanism that rotates the substrate held by the substrate holding portion;
a coating cup surrounding the substrate held on the substrate holding section;
a nozzle for supplying a coating liquid for forming a coating film to a central portion of a surface of the substrate;
a ring member disposed above the substrate holder so as to be movable up and down, the ring member having a diameter equal to or longer than a diameter of the substrate;
an exhaust device for exhausting an atmosphere in the coating cup; and
and a controller configured to control the rotation mechanism and the exhaust device so that the rotation speed of the rotation mechanism is reduced and the exhaust flow rate of the exhaust device is increased after the step of supplying the coating liquid to the substrate held by the substrate holding portion by the nozzle and diffusing the coating liquid by the rotation mechanism.
CN202010017203.7A 2019-01-18 2020-01-08 Coating film forming method and coating film forming apparatus Active CN111463112B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-007290 2019-01-18
JP2019007290A JP7202901B2 (en) 2019-01-18 2019-01-18 Coating film forming method and coating film forming apparatus

Publications (2)

Publication Number Publication Date
CN111463112A true CN111463112A (en) 2020-07-28
CN111463112B CN111463112B (en) 2024-04-02

Family

ID=71610091

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010017203.7A Active CN111463112B (en) 2019-01-18 2020-01-08 Coating film forming method and coating film forming apparatus

Country Status (5)

Country Link
US (1) US11557495B2 (en)
JP (1) JP7202901B2 (en)
KR (1) KR20200090100A (en)
CN (1) CN111463112B (en)
TW (1) TW202041114A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI770753B (en) * 2021-01-04 2022-07-11 南亞科技股份有限公司 Rinsing device and rinsing method

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050069787A1 (en) * 2003-09-29 2005-03-31 Hoya Corporation Mask blanks and method of producing the same
JP2005128516A (en) * 2003-09-29 2005-05-19 Hoya Corp Mask blank, its manufacturing method and method for manufacturing transfer mask
CN1945437A (en) * 2006-10-26 2007-04-11 友达光电股份有限公司 Coating drier with regulating air flow path function
TW200900161A (en) * 2007-03-02 2009-01-01 Tokyo Electron Ltd Substrate processing apparatus
KR20090039446A (en) * 2007-10-18 2009-04-22 세메스 주식회사 Apparatus for ashing
CN101581885A (en) * 2008-05-13 2009-11-18 东京毅力科创株式会社 Coating apparatus and method
CN101826449A (en) * 2009-03-04 2010-09-08 东京毅力科创株式会社 Liquid handling device and method for treating liquids
US20150155197A1 (en) * 2013-12-03 2015-06-04 Tokyo Electron Limited Coating film forming apparatus, coating film forming method, and storage medium
US20160225617A1 (en) * 2015-01-30 2016-08-04 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing apparatus and recording medium
US20170140929A1 (en) * 2015-11-16 2017-05-18 Tokyo Electron Limited Coating film forming method, coating film forming apparatus, and storage medium
US20180253007A1 (en) * 2015-09-15 2018-09-06 Tokyo Electron Limited Substrate processing apparatus, substrate processing method and storage medium

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4800836A (en) * 1987-03-27 1989-01-31 Kabushiki Kaisha Toshiba Resist coating apparatus
TW480584B (en) * 1999-08-17 2002-03-21 Tokyo Electron Ltd Solution processing apparatus and method
KR100798437B1 (en) * 2000-12-04 2008-01-28 가부시키가이샤 에바라 세이사꾸쇼 Substrate processing method
US6860945B2 (en) * 2001-03-22 2005-03-01 Tokyo Electron Limited Substrate coating unit and substrate coating method
US6616758B2 (en) * 2001-03-23 2003-09-09 Techpoint Pacific (S) Pte Ltd Method and apparatus for spin coating
JP3890026B2 (en) * 2003-03-10 2007-03-07 東京エレクトロン株式会社 Liquid processing apparatus and liquid processing method
JP5954266B2 (en) * 2013-06-27 2016-07-20 東京エレクトロン株式会社 Coating film forming device
JP6465000B2 (en) 2015-11-16 2019-02-06 東京エレクトロン株式会社 Coating film forming method, coating film forming apparatus, and storage medium

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050069787A1 (en) * 2003-09-29 2005-03-31 Hoya Corporation Mask blanks and method of producing the same
JP2005128516A (en) * 2003-09-29 2005-05-19 Hoya Corp Mask blank, its manufacturing method and method for manufacturing transfer mask
CN1945437A (en) * 2006-10-26 2007-04-11 友达光电股份有限公司 Coating drier with regulating air flow path function
TW200900161A (en) * 2007-03-02 2009-01-01 Tokyo Electron Ltd Substrate processing apparatus
KR20090039446A (en) * 2007-10-18 2009-04-22 세메스 주식회사 Apparatus for ashing
CN101581885A (en) * 2008-05-13 2009-11-18 东京毅力科创株式会社 Coating apparatus and method
CN101826449A (en) * 2009-03-04 2010-09-08 东京毅力科创株式会社 Liquid handling device and method for treating liquids
US20150155197A1 (en) * 2013-12-03 2015-06-04 Tokyo Electron Limited Coating film forming apparatus, coating film forming method, and storage medium
TW201532678A (en) * 2013-12-03 2015-09-01 Tokyo Electron Ltd Coating film forming apparatus, coating film forming method, and storage medium
US20160225617A1 (en) * 2015-01-30 2016-08-04 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing apparatus and recording medium
US20180253007A1 (en) * 2015-09-15 2018-09-06 Tokyo Electron Limited Substrate processing apparatus, substrate processing method and storage medium
US20170140929A1 (en) * 2015-11-16 2017-05-18 Tokyo Electron Limited Coating film forming method, coating film forming apparatus, and storage medium
CN107051831A (en) * 2015-11-16 2017-08-18 东京毅力科创株式会社 Coated film forming method and coating membrane formation device

Also Published As

Publication number Publication date
US20200234979A1 (en) 2020-07-23
US11557495B2 (en) 2023-01-17
JP2020116485A (en) 2020-08-06
KR20200090100A (en) 2020-07-28
CN111463112B (en) 2024-04-02
JP7202901B2 (en) 2023-01-12
TW202041114A (en) 2020-11-01

Similar Documents

Publication Publication Date Title
KR102647064B1 (en) Coating film forming method, coating film forming apparatus, and storage medium
US9082614B1 (en) Periphery coating apparatus, periphery coating method and storage medium therefor
JP5296021B2 (en) Coating processing method, program, computer storage medium, and coating processing apparatus
JP2012196609A (en) Coating method and coating apparatus
JP6688112B2 (en) Substrate processing equipment
KR20150064667A (en) Coating film forming apparatus, coating film forming method, and storage medium
US20220055063A1 (en) Coating film forming method and coating film forming apparatus
JP6465000B2 (en) Coating film forming method, coating film forming apparatus, and storage medium
KR102006059B1 (en) Cover plate for defect control in spin coating process
KR101724766B1 (en) Coating processing apparatus, coating processing method and storage medium
CN111463112A (en) Coating film forming method and coating film forming apparatus
US20240085813A1 (en) Solution treatment apparatus and cleaning method
JP6481598B2 (en) Coating film forming method, coating film forming apparatus, and storage medium
CN107230653B (en) Substrate processing apparatus, substrate processing method, and storage medium
TW201544197A (en) Coating method, program, computer storage medium and coating device
JP6432644B2 (en) Coating film forming apparatus, coating film forming method, and storage medium
JP7336276B2 (en) Coating film forming method and coating film forming apparatus
JP6542594B2 (en) Substrate processing apparatus and substrate processing method
KR20220162329A (en) Method and apparatus for treating substrate
KR20040006789A (en) Apparatus for coating a substrate

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant